CN103676353A - Pixel structure, array substrate and display device - Google Patents
Pixel structure, array substrate and display device Download PDFInfo
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- CN103676353A CN103676353A CN201310646412.8A CN201310646412A CN103676353A CN 103676353 A CN103676353 A CN 103676353A CN 201310646412 A CN201310646412 A CN 201310646412A CN 103676353 A CN103676353 A CN 103676353A
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Abstract
The invention discloses a pixel structure, an array substrate and a display device. The pixel structure comprises a first electrode and a second electrode, wherein the first electrode comprises a plurality of first electrode parts and a plurality of first gaps located between the adjacent first electrode parts, the second electrode comprises a plurality of parallel strip-shaped second electrode parts and a plurality of second gaps located between the adjacent second electrode parts, the downward perpendicular projection of each first electrode part is overlapped with the downward perpendicular projection of each second electrode part, the second electrode comprises third electrode parts, and each second electrode part is connected with the adjacent electrode part through one third electrode part. The array substrate comprises the pixel structure. The display device comprises the array substrate. According to the technical scheme, storage capacitance is reduced, the second electrode is designed in a narrow gap patterning mode, and on the basis of reducing the storage capacitance, high transmittance and high technological yield are maintained.
Description
Technical field
The invention belongs to technical field of liquid crystal display, be specifically related to a kind of dot structure, array base palte and display device.
Background technology
Along with Thin Film Transistor (TFT) liquid crystal display (Thin Film Transistor Liquid Crystal Display, TFT-LCD) development of technology and the progress of industrial technology, liquid crystal display device production cost reduces, manufacturing process day by day perfect, TFT-LCD has been substituted the mainstream technology that cathode-ray tube display becomes flat pannel display field.
Raising day by day due to living standard, client also further improves the requirement of display device, high refreshing frequency, and the display device of high display quality becomes main flow, for strengthening product competitiveness, reduce the inevitable choice that display device cost also becomes vast production firm simultaneously.
LCD shows display modes such as being divided into twisted nematic (TN), perpendicualr field switch type (VA), flat field switch type (IPS), a senior super dimension switch type (ADS).Wherein TN, VA utilize vertical electric field to drive liquid crystal to rotate, to realize the control to GTG, conventionally need to add vertical electric field on the surface of infrabasal plate (array base palte) and upper substrate (colored filter substrate), liquid crystal is rotated and is rendered as the state that we need under the effect of vertical electric field.Yet, the LCD display view angle that vertical electric field drives is narrower, when different directions is observed, can there is reversal development in the picture under different GTGs, for example, when client is when side direction is watched, there is significant colour cast and change in the facial color that can find the personage in picture, the impact that the now generation of GTG flop phenomenon is serious client's visual experience, cannot realize higher added value of product.
For addressing this problem, flat field switch type display device and a senior super dimension switch type display device have successively been developed, flat field switch type display technique utilizes the electrode in same level to produce the electric field driven liquid crystal rotation of horizontal direction, because the main along continuous straight runs of liquid crystal under this pattern is orientated, therefore optics retardation is less when other all directions are watched, be not easy to produce gray-scale inversion, realize better color quality; A senior super dimension switch type has increased the electric field of a part of vertical direction on the basis of plane electric fields, thereby drives more liquid crystal to be rotated, and has improved panel transmitance, has reduced backlight module production cost.In the dot structure of a senior super dimension switch type display device, need to there is a larger memory capacitance.For further improving the particularly image quality of dynamic menu of product quality, high-frequency drive display device is subject to the favor of Geng Duo production firm, in dot structure due to a senior super dimension switch type display device, there is larger memory capacitance (storage capacitance), therefore its its sweep trace when high-frequency drive needs higher load, need thus to increase the width of sweep trace, but certainly will will reduce aperture opening ratio like this, and then cause that backlight module cost rises.
Summary of the invention
The object of the present invention is to provide a kind of memory capacitance less, kept higher transmitance, dot structure, array base palte and the display device of technique yield simultaneously.
Dot structure of the present invention, comprise the first electrode and the second electrode that is positioned at the first electrode below, not conducting between the first electrode and the second electrode, described the first electrode comprises a plurality of strips and the first electrode part of parallel equidistant arrangement and a plurality of the first gaps between the first adjacent electrode part, described the second electrode comprises a plurality of strips and the second electrode part of parallel equidistant arrangement and a plurality of the second gaps between the second adjacent electrode part, the projection downward vertically of the projection downward vertically of the first electrode part of described the first electrode and the second electrode part of the second electrode exists overlapping, described the second electrode comprises the third electrode portion that a plurality of strips and parallel equidistant are arranged, one end of one end of each the second electrode part and adjacent the second electrode part is connected by a described third electrode portion.
Dot structure of the present invention, wherein, described third electrode portion is parallel with the first electrode part of described the first electrode.
Dot structure of the present invention, wherein, the span of the angle between projection downward vertically of the projection downward vertically of the first electrode part of described the first electrode and the second electrode part of the second electrode is for being greater than 3 degree and being less than 21 degree.
Dot structure of the present invention, wherein, the angle between projection downward vertically of the projection downward vertically of the first electrode part of described the first electrode and the second electrode part of the second electrode is 11 degree.
Dot structure of the present invention, wherein, all first electrode parts of described the first electrode are in parallel by the first connection strap, and all third electrode portions of the second electrode part and the second electrode part are in parallel by the second connection strap.
Dot structure of the present invention, wherein, the width in the first gap is between 3-6um, and the first gap and the second gap are wide.
Dot structure of the present invention, wherein, described the first electrode is pixel electrode, described the second electrode is public electrode.
Dot structure of the present invention, wherein, described the second electrode is pixel electrode, described the first electrode is public electrode.
Array base palte of the present invention, comprises dot structure of the present invention.
Display device of the present invention, comprises array base palte of the present invention.
Technical scheme of the present invention has reduced memory capacitance, the second electrode is carried out to the design of slit pattern, is reducing on the basis of memory capacitance, has kept higher transmitance, technique yield.
Accompanying drawing explanation
Fig. 1 is the first electrode in the embodiment of dot structure of the present invention and the vertical view of the second electrode, show the first electrode and the second electrode structure and between position relationship;
Fig. 2 is the vertical view of the first electrode and the second electrode in dot structure of the prior art.
Embodiment
Technical scheme of the present invention, for reducing memory capacitance, is carried out the second electrode the design of slit pattern, and this design is reducing on the basis of memory capacitance, has kept higher transmitance, technique yield.
As shown in Figure 1, the embodiment of dot structure of the present invention, comprise the first electrode 1 and the second electrode 2 that is positioned at the first electrode 1 below, not conducting between the first electrode 1 and the second electrode 2, the first electrode 1 comprises a plurality of strips and the first electrode part 11 of parallel equidistant arrangement and a plurality of the first gaps 12 between the first adjacent electrode part 11, the second electrode 2 comprises a plurality of strips and the second electrode part 21 of parallel equidistant arrangement and a plurality of the second gaps 22 between the second adjacent electrode part 21, the projection downward vertically of the projection downward vertically of each the first electrode part 11 of the first electrode 1 and the second electrode part 21 of the second electrode 2 exists overlapping, the second electrode 2 comprises the third electrode portion 23 that a plurality of strips and parallel equidistant are arranged, one end of each the second electrode part 21 is connected by a third electrode portion 23 with one end of adjacent the second electrode part 21.
The embodiment of dot structure of the present invention, wherein, each third electrode portion 23 extends along the diagonal line in second gap 22, and each third electrode portion 23 connects two relative angles in second gap 22.
The embodiment of the dot structure of invention, between the first electrode part 11 of the first electrode 1 and the second electrode part 21 of the second electrode 2, form memory capacitance, because the first electrode 1, the second electrode 2 includes gap, the area of the overlapping part of the projection downward vertically of the projection downward vertically of such the first electrode 1 and the second electrode 2 just greatly reduces, thus compared with prior art, memory capacitance just reduces greatly, one end of each the second electrode part 21 of while is connected by a third electrode portion 23 with one end of the second adjacent electrode part 21, be that dot structure of the present invention adopts Z-type electrode design, obtain a higher transmitance.
The embodiment of the dot structure of invention, wherein, third electrode portion 23 is parallel with the first electrode part 11 of the first electrode 1.
The embodiment of the dot structure of invention, wherein, the span of the angle between projection downward vertically of the projection downward vertically of the first electrode part 11 of the first electrode 1 and the second electrode part 21 of the second electrode 2 is for being greater than 3 degree and being less than 21 degree.
Preferably, the embodiment of the dot structure of invention, wherein, the angle between projection downward vertically of the projection downward vertically of the first electrode part 11 of the first electrode 1 and the second electrode part 21 of the second electrode 2 is 11 degree.
The embodiment of dot structure of the present invention, wherein, all first electrode parts 11 of the first electrode 1 are by the first connection strap 13 parallel connections, and all third electrode portions 23 of the second electrode part 2 and all the second electrode parts 21 are by the second connection strap 24 parallel connections.
The embodiment of dot structure of the present invention, wherein, the width in the first gap 12 is between 3-6um, and the first gap 12 and the second gap 22 are wide.
The embodiment of dot structure of the present invention, wherein, the first electrode 1 is pixel electrode, the second electrode 3 is public electrode.
In other embodiment of dot structure of the present invention, the second electrode 2 can be pixel electrode, and the first electrode 1 is public electrode.
Array base palte of the present invention, comprises dot structure of the present invention.
Display device of the present invention, comprises array base palte of the present invention.
As shown in Figure 2, in a kind of dot structure of the prior art, the angle between projection downward vertically of the projection downward vertically of the first electrode part 11 of the first electrode 1 and the second electrode part 21 of the second electrode 2 is 9 degree.
Dot structure transmitance of the prior art is less, and dot structure of the present invention adopts the design of Z-type public electrode, can obtain a higher transmitance; Memory capacitance reduces simultaneously, and technological ability increases.
Transmitance, the electric capacity of supposing an original senior super dimension switch type display structure are 100%.Process deviation allowed band is 1um.
According to simulated experiment the data obtained, above-mentioned dot structure of the prior art, transmitance is 82%, memory capacitance be prior art more early dot structure 45%, technological ability parameter is 0.4um.
Dot structure of the present invention, transmitance is 95%, memory capacitance be prior art more early dot structure 50%, technological ability parameter is 0.4um.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. a dot structure, comprise the first electrode and the second electrode that is positioned at the first electrode below, it is characterized in that, not conducting between the first electrode and the second electrode, described the first electrode comprises a plurality of strips and the first electrode part of parallel equidistant arrangement and a plurality of the first gaps between the first adjacent electrode part, described the second electrode comprises a plurality of strips and the second electrode part of parallel equidistant arrangement and a plurality of the second gaps between the second adjacent electrode part, the projection downward vertically of the projection downward vertically of the first electrode part of described the first electrode and the second electrode part of the second electrode exists overlapping, described the second electrode comprises the third electrode portion that a plurality of strips and parallel equidistant are arranged, one end of one end of each the second electrode part and adjacent the second electrode part is connected by a described third electrode portion.
2. dot structure according to claim 1, is characterized in that, described third electrode portion is parallel with the first electrode part of described the first electrode.
3. dot structure according to claim 1, is characterized in that, the span of the angle between projection downward vertically of the projection downward vertically of the first electrode part of described the first electrode and the second electrode part of the second electrode is for being greater than 3 degree and being less than 21 degree.
4. dot structure according to claim 3, is characterized in that, the angle between projection downward vertically of the projection downward vertically of the first electrode part of described the first electrode and the second electrode part of the second electrode is 11 degree.
5. dot structure according to claim 1, is characterized in that, all first electrode parts of described the first electrode are in parallel by the first connection strap, and all third electrode portions of the second electrode part and the second electrode part are in parallel by the second connection strap.
6. dot structure according to claim 1, is characterized in that, the width in the first gap is between 3-6um, and the first gap and the second gap are wide.
7. dot structure according to claim 1, is characterized in that, described the first electrode is pixel electrode, and described the second electrode is public electrode.
8. dot structure according to claim 1, is characterized in that, described the second electrode is pixel electrode, and described the first electrode is public electrode.
9. an array base palte, is characterized in that, comprises the dot structure as described in any one in claim 1-8.
10. a display device, is characterized in that, comprises array base palte as claimed in claim 8.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310646412.8A CN103676353B (en) | 2013-12-04 | 2013-12-04 | Dot structure, array base palte and display device |
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| CN201310646412.8A CN103676353B (en) | 2013-12-04 | 2013-12-04 | Dot structure, array base palte and display device |
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| CN103676353A true CN103676353A (en) | 2014-03-26 |
| CN103676353B CN103676353B (en) | 2016-07-06 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105487311A (en) * | 2016-01-29 | 2016-04-13 | 重庆京东方光电科技有限公司 | Pixel structure and making method thereof, array substrate and display device |
| CN105700259A (en) * | 2016-04-18 | 2016-06-22 | 京东方科技集团股份有限公司 | Array substrate, liquid crystal display panel and display device |
| WO2017006789A1 (en) * | 2015-07-03 | 2017-01-12 | シャープ株式会社 | Liquid crystal display device |
| WO2018010481A1 (en) * | 2016-07-15 | 2018-01-18 | Boe Technology Group Co., Ltd. | Array substrate and display panel, and fabrication methods thereof |
| CN108139590A (en) * | 2015-09-12 | 2018-06-08 | 兰斯维克托公司 | Liquid crystal beam control device and manufacturing method |
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| CN1637552A (en) * | 2003-12-30 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | Thin film transistor substrate of a horizontal electric field type and method of darkening defective pixel in the same |
| US20080001883A1 (en) * | 2006-06-30 | 2008-01-03 | Lg.Philips Lcd Co., Ltd. | Liquid Crystal Display Device and Method for Fabricating the Same |
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| WO2012165617A1 (en) * | 2011-06-03 | 2012-12-06 | シャープ株式会社 | Liquid crystal display device |
| CN102830560A (en) * | 2012-08-27 | 2012-12-19 | 京东方科技集团股份有限公司 | Array substrate and method for manufacturing same |
| CN102866543A (en) * | 2012-09-13 | 2013-01-09 | 京东方科技集团股份有限公司 | Pixel unit, array substrate and liquid crystal display device |
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- 2013-12-04 CN CN201310646412.8A patent/CN103676353B/en not_active Expired - Fee Related
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| CN1637552A (en) * | 2003-12-30 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | Thin film transistor substrate of a horizontal electric field type and method of darkening defective pixel in the same |
| US20080001883A1 (en) * | 2006-06-30 | 2008-01-03 | Lg.Philips Lcd Co., Ltd. | Liquid Crystal Display Device and Method for Fabricating the Same |
| US20120242942A1 (en) * | 2011-03-22 | 2012-09-27 | Jeon Mu-Kyung | Fringe field switching mode liquid crystal display apparatus and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2017006789A1 (en) * | 2015-07-03 | 2017-01-12 | シャープ株式会社 | Liquid crystal display device |
| CN108139590A (en) * | 2015-09-12 | 2018-06-08 | 兰斯维克托公司 | Liquid crystal beam control device and manufacturing method |
| CN108139590B (en) * | 2015-09-12 | 2021-10-01 | 兰斯维克托公司 | Liquid crystal beam control device and manufacturing method |
| CN105487311A (en) * | 2016-01-29 | 2016-04-13 | 重庆京东方光电科技有限公司 | Pixel structure and making method thereof, array substrate and display device |
| CN105700259A (en) * | 2016-04-18 | 2016-06-22 | 京东方科技集团股份有限公司 | Array substrate, liquid crystal display panel and display device |
| WO2018010481A1 (en) * | 2016-07-15 | 2018-01-18 | Boe Technology Group Co., Ltd. | Array substrate and display panel, and fabrication methods thereof |
| US10416508B2 (en) | 2016-07-15 | 2019-09-17 | Boe Technology Group Co., Ltd. | Array substrate and display panel, and fabrication methods thereof |
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| CN103676353B (en) | 2016-07-06 |
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