CN103647011B - Light-emitting diode encapsulation structure and light-emitting device - Google Patents
Light-emitting diode encapsulation structure and light-emitting device Download PDFInfo
- Publication number
- CN103647011B CN103647011B CN201310694770.6A CN201310694770A CN103647011B CN 103647011 B CN103647011 B CN 103647011B CN 201310694770 A CN201310694770 A CN 201310694770A CN 103647011 B CN103647011 B CN 103647011B
- Authority
- CN
- China
- Prior art keywords
- light
- conversion layer
- wavelength conversion
- emitting diode
- encapsulation structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005538 encapsulation Methods 0.000 title claims abstract description 22
- 238000006243 chemical reaction Methods 0.000 claims abstract description 119
- 241000761557 Lamina Species 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 7
- 230000008033 biological extinction Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 239000008187 granular material Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 11
- 230000005284 excitation Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000007493 shaping process Methods 0.000 description 3
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910001361 White metal Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000010969 white metal Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Device Packages (AREA)
Abstract
The present invention proposes a kind of light-emitting diode encapsulation structure, including substrate and the light emitting diode for being fixed on substrate surface, wavelength conversion layer is covered on the light-emitting surface of light emitting diode, the light that light emitting diode is sent out can excite the wavelength conversion layer to make its stimulated emission stimulated light；Further include the transparent laminas being covered on wavelength conversion layer, there are air-gaps between wavelength conversion layer and the transparent laminas, and the thickness of air-gap is less than or equal to 100 microns.In the light-emitting diode encapsulation structure of the present invention, since the heat of the upper surface of wavelength conversion layer can in time be guided by transparent laminas, the light-emitting diode encapsulation structure is enable to bear the exciting light from the upper surface incidence of wavelength conversion layer, to improve luminous intensity.
Description
Technical field
The present invention relates to light source fields, more particularly to the Projection Display of a kind of light-emitting device and this light-emitting device of use
System.
Background technology
Projection display technique is quickly grown at present, wherein light emitting diode（LED）Light source as a kind of novel light source
Through being widely used in projection display technique.However current main problem is the luminance shortage of LED light source.Example
Such as the light valve of certain size, etendue has determined that, i.e. the quantity of LED is defined, and single LED
Luminance shortage just directly result in be incident in light valve luminous flux it is insufficient.Especially green LED, even more entire LED light source system
The bottleneck of system.
Invention content
For above-mentioned problem, the present invention proposes a kind of light-emitting diode encapsulation structure, including substrate and is fixed on substrate
The light emitting diode on surface is covered with wavelength conversion layer on the light-emitting surface of light emitting diode, and the light that light emitting diode is sent out can
The wavelength conversion layer is excited to make its stimulated emission stimulated light；Further include the transparent laminas being covered on wavelength conversion layer, wavelength
There are air-gaps between conversion layer and the transparent laminas, and the thickness of air-gap is less than or equal to 100 microns.
The present invention also proposes a kind of light-emitting device, including above-mentioned light-emitting diode encapsulation structure, further includes excitaton source, should
The exciting light of excitaton source transmitting is incident in wavelength conversion layer through transparent laminas and makes its stimulated emission stimulated light.
In the light-emitting diode encapsulation structure of the present invention, since the heat of the upper surface of wavelength conversion layer can be led by transparent
Backing guides in time so that the light-emitting diode encapsulation structure can bear the excitation from the upper surface incidence of wavelength conversion layer
Light, to improve luminous intensity.
Description of the drawings
Fig. 1 is the structural schematic diagram of the first embodiment of the light-emitting device of the present invention；
Fig. 2 is the structural schematic diagram of another embodiment of the light-emitting device of the present invention；
Fig. 3 is the structural schematic diagram of another embodiment of the light-emitting device of the present invention；
Fig. 4 is the structural schematic diagram of another embodiment of the light-emitting device of the present invention；
Fig. 5 is the structural schematic diagram of another embodiment of the light-emitting device of the present invention；
Fig. 6 is the structural schematic diagram of another embodiment of the light-emitting device of the present invention；
Fig. 7 and Fig. 8 is that the exciting light that laser diode light source is sent out is incident in wavelength conversion layer and is formed by showing for hot spot
It is intended to；
Fig. 9 and Figure 10 is the citing of the encapsulating structure of two kinds of light-emitting diode chip for backlight unit, wavelength conversion layer and transparent laminas；
Figure 11 is the schematic diagram for the effective district that exciting light is incident in wavelength conversion layer.
Specific implementation mode
Fig. 1 is the structural schematic diagram of first embodiment of the invention.As shown in Figure 1, the present invention proposes a kind of light-emitting device, packet
Light-emitting diode chip for backlight unit 101 is included, which is covered with wavelength conversion layer 102, light-emitting diode chip for backlight unit
101 the first light sent out can excite the wavelength convert coating 102 that it is made to emit stimulated light 132.Specifically, in the present embodiment
In, the first light of light-emitting diode chip for backlight unit transmitting is blue light, includes yellow or yellow green or green wavelength in wavelength conversion layer
Transition material, such wavelength conversion layer can absorb the first light and emit yellow light or green-yellow light or green light.Preferably, wavelength turns
Change in layer include YAG systems fluorescent material（Such as fluorescent powder）.In practical applications, light-emitting diode chip for backlight unit can also be sent out
The light of ultraviolet light or purple light or other wavelength is penetrated, and the color of the light of wavelength conversion layer stimulated emission is not also limited.
The light-emitting device of the present embodiment further includes excitaton source 103, and the exciting light 133 of the excitaton source 103 transmitting is incident in hair
The wavelength conversion layer 102 on luminous diode chip surface simultaneously makes it emit stimulated light 132.In the present embodiment, it specifically excites
Source 103 is laser diode light source 103.Preferably, in order to improve the efficiency for the laser 133 that laser diode light source is sent out, this
The light-emitting device of embodiment further includes collimation lens 113, the laser for collecting and collimation laser diode light-source 103 is sent out.
Excitaton source 103 is advantageous in that the collimation of laser diode light source light beam is preferable, and light beam compares using laser diode light source
It is easy to control, collection efficiency is relatively high, and disadvantage is that the cost of laser diode is relatively high.In practical applications, excitaton source
103 can also use light emitting diode（LED）Light source just needs to use lens or other optical elements by light emitting diode at this time
The light of light source collects and projects 102 surface of wavelength conversion layer, and best mode is to be formed to send out in wavelength convert layer surface
The picture in optical diode light source luminescent face.
Further include the light collection dress positioned at 101 light path rear end of light-emitting diode chip for backlight unit in the light-emitting device of the present embodiment
It sets, the stimulated light 132 that the wavelength conversion layer 102 for collecting from light-emitting diode chip for backlight unit surface is sent out.In the present embodiment, light
Collection device includes the first lens 111 and the second lens 112, and the lens group of two panels lens composition is realized to wavelength conversion layer jointly
The collection of 102 light 132 sent out and collimating effect, spherical aberration can preferably be corrected using two panels lens by being advantageous in that.Excitation
The exciting light 133 that source is sent out is incident in wavelength conversion layer 102 back to light-emitting diode chip for backlight unit by light collecting device 111 and 112
101 one side.
Light-emitting device further includes the light-dividing device 114 between excitaton source 103 and light collecting device 111 and 112 light paths,
The light path for the stimulated light 132 that the light path of exciting light 133 for sending out excitaton source is sent out with wavelength conversion layer separates, avoid by
Laser 132 is incident in excitaton source 103.Specifically, in the present embodiment, light-dividing device 114 is that transmission exciting light 133 is anti-simultaneously
The light splitting optical filter 114 of stimulated light 132 is penetrated, exciting light 133 is incident in wavelength conversion layer after transmiting the light splitting optical filter 114, and
The stimulated light 132 that wavelength conversion layer is sent out is reversed along the light path of exciting light 133 after the collection of light collecting device 111 and 112
Outgoing, and avoided by reflection to being detached from the light path of exciting light 133 after being incident in light splitting optical filter 114
It is incident in excitaton source 103.In practical applications, light splitting optical filter can also reflected excitation light transmit stimulated light simultaneously, in this way
The position for resetting excitaton source 103 makes exciting light light path be exchanged with stimulated light light path, equally may be implemented two
The effect of person's light path separation.
In the present embodiment, since the both sides of wavelength conversion layer 102 are respectively by light-emitting diode chip for backlight unit 101 and excitaton source
The 103 light excitations sent out, therefore excitation energy higher, therefore brightness higher.Meanwhile light-emitting diode chip for backlight unit 101 is the good of heat
Conductor, it can also be that wavelength conversion layer 102 radiates to promote the luminous efficiency of wavelength conversion layer 102.
In the present embodiment, light collecting device 111 and 112 also acts as while playing collection and collimation stimulated light 132
Guiding exciting light 133 is incident in the effect of wavelength conversion layer 102, because of this, exciting light 133 and stimulated light 132 exist
What the light path at light collecting device 111 and 112 necessarily overlapped, therefore also just need light-dividing device 114 by the light path of the two point
It opens.This is most common optical texture, is advantageous in that the regular simplicity of optical layout；It but in practical applications, can not also
Practical light collecting device guides exciting light 133, such as makes the exciting light 133 to be directly incident in wavelength convert with larger angle
Layer surface equally may be implemented 102 two surfaces of wavelength conversion layer while being excited to realize that high-luminance light exports in this way, this
When light-dividing device can be omitted.
In the present embodiment, it is preferred that light-emitting diode chip for backlight unit surface is coated with filter coating, and it is same which transmits the first light
When reflect stimulated light.Since the stimulated light that wavelength conversion layer is sent out is isotropic emission, necessarily there is quite a few
Stimulated light can emit towards light-emitting diode chip for backlight unit.The setting of filter coating, which can reflect this partially-excited light, makes it from wavelength convert
The another side of layer is emitted to improve efficiency.Certainly, even if without filter coating, due to there is transmitting inside light-emitting diode chip for backlight unit
Layer, therefore be incident in the stimulated light inside light-emitting diode chip for backlight unit and largely can still be reflected, but its reflectivity is generally low
In the reflectivity of filter coating.
In the embodiment shown in fig. 1, light-dividing device can also actually be used other types of using light splitting optical filter
Light-dividing device achievees the purpose that identical differentiation light path, as shown in Figures 2 and 3.
In light-emitting device shown in Fig. 2, unlike light-emitting device shown in FIG. 1, light-dividing device becomes with holes
Speculum 214, i.e., have aperture 214a among speculum.The excitation light transmission aperture 214a and process light that excitaton source is sent out are collected
Device is incident in wavelength conversion layer, and the major part in the stimulated light that wavelength conversion layer is sent out can be in the reflection around aperture 214a
To be separated with the light path of exciting light, only seldom stimulated light can be incident in through aperture 214 on excitaton source for region reflection.
In light-emitting device shown in Fig. 3, unlike light-emitting device shown in FIG. 1, light-dividing device becomes small anti-
Penetrate mirror 314, the exciting light that excitaton source is sent out is incident on small reflector 314 and is reflected onto wavelength conversion layer, and wavelength convert
Major part in the stimulated light 332 that layer is sent out can be passed through from the space around small reflector to the light path phase point with exciting light
From only seldom stimulated light 332 can be incident in small reflector and be reflected off to excitaton source.
The embodiment of Fig. 2 and Fig. 3 is two deformations of the embodiment of Fig. 1.Specified otherwise is not done in following discussion
It is further described on the basis of embodiment all shown in Fig. 1, but technical characteristic described below is equally applicable to
The embodiment of Fig. 2 and Fig. 3.
Fig. 4 illustrates the structural schematic diagram of another embodiment of the invention.Unlike embodiment shown in FIG. 1,
Further include the reflection unit 415 between wavelength conversion layer and light collecting device light path, the reflection unit in the present embodiment
415 light 434 for the angle sent out from wavelength conversion layer to be more than to the specific angle of emergence（Wide-angle light）It is reflected back wavelength convert
Layer.Relative to embodiment shown in FIG. 1, the advantage of this embodiment is that, it can be by cannot be utilized or utilization ratio very
Low wide-angle light 434 is reflected back wavelength conversion layer, and goes out to shoot out again by the scattering of wavelength conversion layer and reflection, middle part
Light splitting becomes low-angle light to be emitted by the collection of light collecting device, remaining wide-angle light is reflected back toward wavelength and turns again
Change layer, reciprocation cycle to form the stimulated light 432 of outgoing until most of light is all emitted from low-angle, to improve efficiency.
In practical applications, the specific angle of emergence is often determined by following some factors.First, it is sent out from wavelength conversion layer
Light more than 65 degree is very low by the efficiency of light collecting device Collection utilization；Second, the optical system of light-emitting device rear end limits
The etendue of light-emitting device, to limit the light emitting angle of wavelength conversion layer.In general, the specific angle of emergence is more than 60
Degree, but this is not construed as limiting.
In the present embodiment, reflection unit 434 is using the wavelength conversion layer centre of luminescence as the spherical surface in the center of circle, it substantially can be with
The light sent out from wavelength conversion layer is reflected back wavelength conversion layer again.Spherical surface, which is advantageous in that, to be easily worked, is at low cost.Effect is more
To be ideal, reflection unit 434 be using two endpoints of light-emitting zone of wavelength conversion layer as the ellipsoid of focus, in this way can be real
Now wavelength conversion layer light-emitting zone can be returned to after the reflection of reflection unit 434 from the light that one endpoint of light-emitting zone is sent out
Another focus ensure that in this way according to Edge Ray Theorem from each of the light-emitting zone of wavelength conversion layer to the greatest extent
The light that a point is sent out can return in the light-emitting zone of wavelength conversion layer.
In the embodiment shown in fig. 4, the reflection between wavelength conversion layer and light collecting device light path has been used to fill
Set 415, actually reflection unit may be located on inside light collecting device and the light path rear end of light collecting device, separately below with
Fig. 5 and Fig. 6 are described in detail.
Embodiment shown in fig. 5 in contrast to the embodiment of FIG. 4, reflection unit 515 is located at the inside of light collecting device,
I.e. between lens 511 and 512 light path.The stimulated light 534 of wide-angle is after the collection of lens 511 positioned at the outer of light beam
It encloses, reflection unit 515 is arranged at the periphery for covering the light beam and this part light reflection is gone back and it is made to be incident in wave again
Long conversion layer.And embodiment shown in fig. 6 in contrast to the embodiment of FIG. 4, reflection unit 615 is located at the light of light collecting device
Road rear end, the stimulated light 634 of wide-angle are located at the periphery of light beam after the collection of light collecting device, and reflection unit 615 is set
It is placed in the periphery for covering the light beam and this part light reflection is gone back and it is made to be incident in wavelength conversion layer again.Relative to Fig. 4
Embodiment, it is larger that the embodiment of Fig. 5 and Fig. 6 is advantageous in that reflection unit compares, and adjusts more convenient, but disadvantage is
The stimulated light that reflection unit 415 reflects in reflection unit 515 and 615 embodiments of stimulated light ratio Fig. 4 that can reflect is few.
In the embodiment of Fig. 5 and Fig. 6, the section not necessarily straight line of reflection unit 515 and 615, it is also possible to be curve, design principle
Be by be incident on the stimulated light on its surface it is more as possible be reflected back wavelength conversion layer.The design method is the prior art, herein
It need not repeat.
All it is to have used laser diode light source as excitaton source, while being collected using collimation lens in the above-described embodiments
The exciting light that its sends out with collimation.The characteristics of laser diode light source, is that luminous point is minimum, only several to tens microns,
If being therefore placed on the focal point of collimation lens, angle of divergence very little can be centainly formed in the light path rear end of collimation lens
Light beam.The light beam forms the hot spot of very little by light collecting device post-concentration coke in wavelength conversion layer, as shown in Figure 7.
The vertical view of light-emitting diode chip for backlight unit 701 and the wavelength conversion layer 702 on its surface is illustrated in Fig. 7.Solid line in figure
701a illustrates the gold thread on light-emitting diode chip for backlight unit 701, which is used to power for light-emitting diode chip for backlight unit 701.Gold thread can
Can be one or more（4 are illustrated in figure）.Small circular region 733a in figure illustrates the hair when laser diode light source
When luminous point is located at the focus of collimation lens, exciting light is incident in the hot spot of wavelength conversion layer formation.In this case, due to light
Therefore excitation light power density is very big for the area very little of spot 733a, this may cause wavelength conversion layer be excited hot-spot from
And cause the decline of efficiency.One simple solution is that the luminous point and collimation lens of laser diode light source is arranged
There are an offsets for focus so that exciting light is incident in wavelength conversion layer and is formed by hot spot more than when laser diode light source
Exciting light is incident in wavelength conversion layer and is formed by hot spot when luminous point is located at the focus of collimation lens.Such as in the figure 7, when sharp
When optical diode light source is relative to collimation lens defocus, hot spot of the exciting light on wavelength conversion layer is substantially such as long-elliptical
Shown in 733b, defocus is more, and hot spot 733b is longer.Need the length for controlling the hot spot not get higher than wavelength conversion layer certainly
Magnitude range is that efficiency is best.When exciting light is incident in the hot spot of wavelength conversion layer as shown in 733b, local luminous power is close
Degree is much smaller compared to hot spot 733a, therefore efficiency is obviously improved.
In practical applications, the hot spot that wavelength convert layer surface is incident in expand exciting light also has other methods.
For example, light-emitting device further includes the shaping element positioned at collimation lens light path rear end, for carrying out shaping to laser beam
So that it is scheduled shape that it, which is incident in wavelength convert layer surface to be formed by hot spot,.Shaping element can be diffraction optics
Element (DOE), can also be fly eye lens array.For example, the small compound-eye unit of each in fly eye lens array is length
Wide ratio is 16：9 rectangle, such exciting light, which is incident in behind the surface of wavelength conversion layer also, can form a uniform length-width ratio
It is 16：9 rectangular light spots, as shown in the hot spot 833 in Fig. 8.
Core of the invention thought is to enable two faces of the wavelength conversion layer on light-emitting diode chip for backlight unit surface same
When be excited to realize the light output of high brightness, this can bring a problem.It defines wavelength conversion layer and is attached at light-emitting diodes
The one side of tube chip is the first face, and one side corresponding thereto is the second face.When wavelength conversion layer is only sent out by light-emitting diode chip for backlight unit
When the first light excitation gone out, the first light is incident from the first face of wavelength conversion layer, and is gradually absorbed inside wavelength conversion layer,
Therefore the exciting light light intensity that the first face of wavelength conversion layer is born is maximum, and the exciting light light intensity that the second face is born is minimum, into
And heat caused by the first face of wavelength conversion layer is most.This partial heat can be directly over light-emitting diode chip for backlight unit and scatter and disappear
Fall.And when excitation that wavelength conversion layer is sent out from excitaton source, opposite, the second face of wavelength conversion layer is exciting light
Prominent face, therefore the heat that the second face generates is maximum, this partial heat has to pass through the conduction of wavelength conversion layer itself
Get to light-emitting diode chip for backlight unit.Due to the general poor heat conduction of wavelength conversion layer, the heat of the second face generation dissipates
Thermal effect will not be fine, and heat is easy to accumulate to reduce the luminous efficiency of wavelength conversion layer in the second face of wavelength conversion layer.
In order to solve this problem, one piece of transparent laminas can be covered on the second face of wavelength conversion layer.The present invention
Also propose a kind of light-emitting diode encapsulation structure, as shown in Figure 9.The light-emitting diode encapsulation structure, including substrate 916 and fixation
Light emitting diode 901 in 916 surface of substrate is covered with wavelength conversion layer 902 on the light-emitting surface of light emitting diode 901, shines
The light that diode 901 is sent out can excite the wavelength conversion layer 902 to make its stimulated emission stimulated light.Light-emitting diode encapsulation structure
Further include the transparent laminas 917 being covered on wavelength conversion layer 902, between wavelength conversion layer 902 and the transparent laminas 917
There are air-gaps, and the thickness of air-gap is less than or equal to 100 microns.
In the light-emitting diode encapsulation structure, transparent laminas 917 is covered in the surface of wavelength conversion layer 902 and is dissipated for it
Heat.Heat is transmitted to being used to support in air or by 917 adjacent edges of transparent laminas by transparent laminas 917
The support element 918 of bright thermally conductive sheet is transmitted on substrate, and transparent laminas 917 is fixedly connected by support element 918 with substrate 916.
Preferred support element is highly heat-conductive material, can the heat on transparent laminas quickly be passed to substrate 916.
In the present embodiment, the upper surface of wavelength conversion layer is its second face, and exciting light is incident on this face, this
Heat caused by face is most, and these heats can directly be guided by transparent laminas, avoids the accumulation of heat in this way
It is excessively high with temperature, to improve the efficiency of wavelength conversion layer.
The effect of air-gap between wavelength conversion layer 902 and transparent laminas 917 is, avoids wavelength conversion layer
902 light sent out are propagated in the inner transverse of transparent laminas 917 to cause the horizontal proliferation of light.It tests and demonstrate,proves through inventor
Bright, after the thickness of air-gap is more than 100 microns, the heat on wavelength conversion layer 902 is difficult to conduct by transparent laminas,
The action deprivation of transparent laminas.
Transparent laminas is sheet glass, sapphire sheet or other cellotone sheets, and wherein sheet glass cost is very low, and blue
The heat conductivility of jewel piece is more preferable, but higher price.Preferably, two faces of transparent laminas are coated with anti-reflection film.
In fig.9, in practical applications, when operating temperature is higher, wavelength conversion layer can soften, at this moment wavelength conversion layer
It may be clung with the transparent laminas on its surface, air-gap between the two is not present at this time, what wavelength conversion layer was sent out
Light will be directly incident on the inside of transparent laminas and lateral diffusion occurs, to reduce light emission luminance.In order to avoid
The appearance of this phenomenon, further include as shown in Figure 10, in light-emitting diode encapsulation structure be distributed in wavelength conversion layer 1002 with thoroughly
Hard particles 1019 between bright thermally conductive sheet 1017.These hard particles 1019 are the particles of inorganic material of not extinction, such as white
Metal oxide such as silica, titanium oxide, it is also possible to fluorescent powder grain, it is also possible to which transparent glass powder etc. has
Multiple choices.If hard particles are fluorescent powder, material and the wavelength converting material in wavelength conversion layer 1002 of the fluorescent powder
It is identical preferred.Hard particles 1019 can also be integral with wavelength conversion layer or transparent laminas, such as hard
Grain is to be machined in transparent laminas surface molecule.Due to the presence of hard particles 1019, when wavelength conversion layer softens, this
The particle of the not extinction of layer hard can play the role of by wavelength conversion layer 1002 and transparent laminas 1017 keep apart to
The two is avoided to be bonded.
In practical applications, other than using hard particles, also another kind avoids wavelength conversion layer and transparent laminas
As hard material, hardness makes wavelength conversion layer with transparent laminas not for the method adhered to each other, i.e. wavelength conversion layer sheet
It can adhere to each other together.Such as it is most common, the base material of wavelength conversion layer is ceramics or glass.
The present invention also proposes a kind of light-emitting device, including above-mentioned light-emitting diode encapsulation structure, further includes excitaton source, should
The exciting light of excitaton source transmitting is incident in wavelength conversion layer through transparent laminas and makes its stimulated emission stimulated light.
The present invention also proposes a kind of projection display system, including light valve and above-mentioned light-emitting device, wherein light valve receive from
Light that light-emitting device is sent out and being modulated to it makes its carry image information.
In practical applications, it is not often hair since etendue mismatches or the length-width ratio of light valve mismatches
The light of each position on light-emitting diode chip for backlight unit in electro-optical device can be collected by light valve, therefore light-emitting diode chip for backlight unit
The wavelength conversion layer on surface is divided into effective district and dead space, and the stimulated light that wherein effective district is sent out can be invalid by light valve utilization
The stimulated light in area cannot be utilized by light valve.In order to realize the maximization of efficiency, the exciting light that excitaton source is sent out in light-emitting device enters
It penetrates in the effective district of wavelength conversion layer.As shown in figure 11.The surface of light-emitting diode chip for backlight unit 1101 is covered with wavelength conversion layer
1102, the effective district 1102a on wavelength conversion layer 1102 occupies most of area of wavelength conversion layer 1102, it is seen that this is effectively
The length of wavelength conversion layer is substantially filled in length for area but there is no the width for being full of wavelength conversion layer on the width.
Exciting light forms hot spot 1133 in the inside of effective district 1102a on wavelength conversion layer, can ensure by excitation in this way
The stimulated light of generation can effectively be utilized by light valve.
Example the above is only the implementation of the present invention is not intended to limit the scope of the invention, every to utilize this hair
Equivalent structure or equivalent flow shift made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant skills
Art field, is included within the scope of the present invention.
Claims (7)
1. a kind of light-emitting diode encapsulation structure, which is characterized in that including substrate and the light emitting diode for being fixed on substrate surface,
Wavelength conversion layer is covered on the light-emitting surface of light emitting diode, the light that light emitting diode is sent out can excite the wavelength conversion layer to make
Its stimulated emission stimulated light；Further include the transparent laminas being covered on wavelength conversion layer, the wavelength conversion layer is transparent with this
There are air-gaps between thermally conductive sheet, and the thickness of air-gap is less than or equal to 100 microns；
Further include the hard particles being distributed between wavelength conversion layer and transparent laminas, which is the inorganic of not extinction
Composition granule, and the hard particles are fluorescent powder, the material of the fluorescent powder is identical as the wavelength converting material in wavelength conversion layer.
2. light-emitting diode encapsulation structure according to claim 1, which is characterized in that the transparent laminas is sapphire
Piece.
3. light-emitting diode encapsulation structure according to claim 1, which is characterized in that the edge of the transparent laminas with
The substrate is fixedly connected.
4. light-emitting diode encapsulation structure according to claim 1, which is characterized in that the hard particles and wavelength convert
Layer or transparent laminas are integral.
5. light-emitting diode encapsulation structure according to claim 1, which is characterized in that the wavelength conversion layer is hard material
Material, hardness make wavelength conversion layer and transparent laminas not to adhere to each other together.
6. light-emitting diode encapsulation structure according to claim 5, which is characterized in that the base material of the wavelength conversion layer is
Ceramics or glass.
7. a kind of light-emitting device, which is characterized in that include according to the light-emitting diode encapsulation structure described in claim 1 to 6, also
Including excitaton source, the excitaton source transmitting exciting light be incident in wavelength conversion layer through transparent laminas and make its stimulated emission by
Laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310694770.6A CN103647011B (en) | 2013-12-18 | 2013-12-18 | Light-emitting diode encapsulation structure and light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310694770.6A CN103647011B (en) | 2013-12-18 | 2013-12-18 | Light-emitting diode encapsulation structure and light-emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103647011A CN103647011A (en) | 2014-03-19 |
| CN103647011B true CN103647011B (en) | 2018-09-21 |
Family
ID=50252203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310694770.6A Active CN103647011B (en) | 2013-12-18 | 2013-12-18 | Light-emitting diode encapsulation structure and light-emitting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103647011B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107036033B (en) * | 2017-06-09 | 2023-07-07 | 超视界激光科技（苏州）有限公司 | Light emitting device and lighting system |
| JP7207903B2 (en) * | 2017-11-22 | 2023-01-18 | キヤノン株式会社 | Light source device and projection display device having the same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007080872A (en) * | 2005-09-09 | 2007-03-29 | Matsushita Electric Works Ltd | Light emitting device |
| CN101542753A (en) * | 2006-09-06 | 2009-09-23 | 照明有限责任公司 | Light emitting packages and methods of making same |
| CN201462686U (en) * | 2009-02-18 | 2010-05-12 | 绎立锐光科技开发(深圳)有限公司 | Packaging structure of optical wavelength conversion materials and LED light source |
| CN101889356A (en) * | 2007-12-07 | 2010-11-17 | 松下电工株式会社 | Light emitting device |
| CN203733829U (en) * | 2013-12-18 | 2014-07-23 | 吴震 | Light emitting diode packaging structure and light emitting device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI475729B (en) * | 2011-07-14 | 2015-03-01 | Univ Nat Taiwan Science Tech | Polarized white light emitting diode |
-
2013
- 2013-12-18 CN CN201310694770.6A patent/CN103647011B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007080872A (en) * | 2005-09-09 | 2007-03-29 | Matsushita Electric Works Ltd | Light emitting device |
| CN101542753A (en) * | 2006-09-06 | 2009-09-23 | 照明有限责任公司 | Light emitting packages and methods of making same |
| CN101889356A (en) * | 2007-12-07 | 2010-11-17 | 松下电工株式会社 | Light emitting device |
| CN201462686U (en) * | 2009-02-18 | 2010-05-12 | 绎立锐光科技开发(深圳)有限公司 | Packaging structure of optical wavelength conversion materials and LED light source |
| CN203733829U (en) * | 2013-12-18 | 2014-07-23 | 吴震 | Light emitting diode packaging structure and light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103647011A (en) | 2014-03-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203732871U (en) | Light emitting device and projection display system | |
| US9429830B2 (en) | Fluorescent light emitting element and projector | |
| CN102252169B (en) | High-brightness excitation method and light emitting device based on optical wavelength conversion | |
| JP5552573B2 (en) | Optical element and semiconductor light emitting device using the same | |
| JP6588564B2 (en) | High brightness light emitting device | |
| US9151468B2 (en) | High brightness illumination devices using wavelength conversion materials | |
| US20120217519A1 (en) | Method and structure for encapsulating solid-state light emitting chip and light sources using the encapsulation structure | |
| CN102563410A (en) | Light emitting device, projection device and lighting device | |
| CN103645596A (en) | Light emitting device and projection displaying system | |
| JPWO2016181768A1 (en) | Phosphor substrate, light source device, and projection display device | |
| CN108518590A (en) | Laser light source and lamps and lanterns | |
| CN103647011B (en) | Light-emitting diode encapsulation structure and light-emitting device | |
| CN107210349A (en) | Light-emitting device | |
| EP3669115B1 (en) | Broadband light source based on crystalline phosphor | |
| US11713864B2 (en) | Light source system | |
| CN203733829U (en) | Light emitting diode packaging structure and light emitting device | |
| CN207945505U (en) | Laser light source and lamps and lanterns | |
| JP2018147703A (en) | Light source device | |
| CN105938293B (en) | Material for transformation of wave length array | |
| JP2019028120A (en) | Illumination device and projector | |
| JP7484130B2 (en) | Wavelength conversion element, light source device and projector | |
| CN113671781A (en) | Light emitting unit, light source system, and laser projection apparatus | |
| JP6866627B2 (en) | Lighting equipment and projector | |
| CN109578824A (en) | A kind of white light uniform illumination device based on paraboloid reflecting cup | |
| CN112443818B (en) | Light source system and lighting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20180814 Address after: No. 27, Mayu West Street, Guangning, Shijingshan District, Beijing Applicant after: Yang Yi Address before: 571138 Hongqi village committee, Hongqi Town, Qiongshan District, Haikou, Hainan Applicant before: Wu Zhen |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |