CN103646985B - 响应度空间可变pin光电探测器及其制作方法 - Google Patents

响应度空间可变pin光电探测器及其制作方法 Download PDF

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CN103646985B
CN103646985B CN201310729364.9A CN201310729364A CN103646985B CN 103646985 B CN103646985 B CN 103646985B CN 201310729364 A CN201310729364 A CN 201310729364A CN 103646985 B CN103646985 B CN 103646985B
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鲁卿
向勇军
谭千里
孙诗
曹飞
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Abstract

为解决现有技术PIN光电探测器存在的在目标距离较近时，输出会产生饱和，从而影响接收系统的动态响应范围等问题，本发明提出一种响应度空间可变PIN光电探测器及其制作方法，在长条矩形I型硅衬底SiO2绝缘层上设置长条矩形光敏面，在光敏面增透膜上设置有一系列从长条矩形中心到两边宽度逐渐变窄的长条形Au膜，并由长条形Au膜的间隙构成光敏区；所述Au膜为蒸镀膜，所述长条形Au膜采用光刻蚀方法制备，所述光敏区的宽度从长条矩形中心到两边宽度逐渐变宽。本发明的有益技术效果是能够使探测器能在光斑信号面积较大且强度弱和光斑信号面积较小且强度高都具有适宜的输出，不会对接收系统的动态响应范围造成影响。

Description

响应度空间可变PIN光电探测器及其制作方法
发明领域
本发明涉及到PIN光电探测器及其制作技术，特别涉及到一种响应度空间可变PIN光电探测器及其制作方法。
背景技术
激光引信是现代武器系统的重要零部件，其作用是探测、分辨目标，并控制弹药适时起爆，以最大限度来发挥武器系统的威力。激光引信的保密性和抗干扰能力都很强，同时也使引信的定位精度和灵敏度大大提高，能够较好地满足弹道导弹爆炸高度控制的要求，因此在空空、地空导弹上已得到了广泛的应用。PIN光电探测器在激光引信中起到了激光探测和信号放大的作用，是激光引信中的核心部件，其性能参数直接决定了激光引信的功能，对于攻击目标的精度和威力起到决定性的作用。PIN光电探测器通过光敏面接收光斑信号，并根据光斑信号的强度输出电信号从而实现目标探测和分辨的功能。所述光敏面由若干个光敏区组成，且光斑的宽度远远大于单个光敏区的宽度。现有技术PIN光电探测器在光敏面上各处的响应度是一致的，而在实际应用中，当距离目标较远时PIN光电探测器接收到的光斑信号面积较大且强度弱，而当距离目标较近时，PIN光电探测器接收到的光斑信号面积较小且强度高。为保证在距离较远时PIN光电探测器有足够的灵敏度，需要在设计时增大PIN光电探测器的响应度，这就使得PIN光电探测器在目标距离较近时，由于光斑信号面积较小且强度高，PIN光电探测器输出就会产生饱和，影响接收系统的动态响应范围。显然，现有技术PIN光电探测器存在着在目标距离较近时，输出会产生饱和，从而影响接收系统的动态响应范围等问题。
发明内容
为解决现有技术PIN光电探测器存在的在目标距离较近时，输出会产生饱和，从而影响接收系统的动态响应范围等问题，本发明提出一种响应度空间可变PIN光电探测器及其制作方法。本发明响应度空间可变PIN光电探测器，在长条矩形I型硅衬底SiO2绝缘层的长条矩形开口区域设置光敏面，在光敏面增透膜上设置有一系列从长条矩形中心到两边宽度逐渐变窄的长条形Au膜，并由长条形Au膜的间隙构成光敏区；所述Au膜为蒸镀膜，所述长条形Au膜采用光刻蚀方法制备，所述光敏区的宽度从长条矩形中心到两边逐渐变宽；所述光敏面由若干个光敏区组成。
进一步的，本发明响应度空间可变PIN光电探测器，长条矩形I型硅衬底SiO2绝缘层的尺寸为12mm×3.5mm，长条矩形光敏面的尺寸为10mm×2.8mm，所述单个光敏区的长度为10mm，所述单个光敏区的宽度为在所述单个光敏区中心最窄处尺寸为22μm以及在所述单个光敏区两边最宽处的尺寸为63μm。
本发明响应度空间可变PIN光电探测器制作方法，包括以下步骤：
S1、在长条矩形低掺杂浓度的I型硅衬底上淀积10nm厚度的SiO2绝缘层；
S2、采用腐蚀方法，在SiO2绝缘层上没有涂覆光刻胶的区域形成长条矩形开口区域；
S3、采用B扩散工艺将硼离子扩散进开口区域的I型硅衬底中形成P型光敏区；
S4、在探测器整个表面淀积一层Si3N4增透膜；
S5、采用P扩散工艺将磷离子扩撒在探测器背面形成N型接触区；
S6、采用腐蚀方法，在Si3N4增透膜上形成电极孔；
S7、在整个Si3N4增透膜上蒸镀一层Au膜；
S8、采用光刻和腐蚀的方法在Au膜上刻蚀出一系列宽度从长条矩形中心到两边逐渐变窄的长条形Au膜图形和P电极，并由长条形Au膜的间隙构成光敏区；
S9、采用蒸发的方式在探测器背面制作N电极。
进一步的，本发明响应度空间可变PIN光电探测器制作方法，长条矩形I型硅衬底SiO2绝缘层的尺寸为12mm×3.5mm，长条矩形光敏面的尺寸为10mm×2.8mm，所述单个光敏区的长度为10mm，所述单个光敏区的宽度为在所述单个光敏区中心最窄处尺寸为22μm以及在所述单个光敏区两边最宽处的尺寸为63μm。
本发明响应度空间可变PIN光电探测器及其制作方法的有益技术效果是能够采用普通工艺技术制作出光敏面中央响应度小、两端响应度大的PIN光电探测器，使得探测器能在光斑信号面积较大且强度弱和光斑信号面积较小且强度高都具有适宜的输出，不会对接收系统的动态响应范围造成影响。
附图说明
附图1是本发明响应度空间可变PIN光电探测器光敏面Au膜图形示意图；
附图2是本发明响应度空间可变PIN光电探测器单个光敏区尺寸示意图；
附图3为本发明响应度空间可变PIN光电探测器结构示意图。
下面结合附图及具体实施例对本发明响应度空间可变PIN光电探测器及其制作方法作进一步的说明。
具体实施方式
附图1是本发明响应度空间可变PIN光电探测器光敏面Au膜图形示意图，附图2是本发明响应度空间可变PIN光电探测器单个光敏区尺寸示意图，附图3为本发明响应度空间可变PIN光电探测器结构示意图，图中，1为硅衬底，2为SiO2绝缘层，3为P型光敏区，4为增透膜，5为N型接触区，6为Au膜，7为P电极，8为N电极。01为光敏区，箭头所指为光照方向。由图可知，本发明响应度空间可变PIN光电探测器，在长条矩形I型硅衬底SiO2绝缘层2的长条矩形开口区域设置光敏面，在光敏面增透膜4上设置有一系列从长条矩形中心到两边宽度逐渐变窄的长条形Au膜6，并由长条形Au膜6的间隙构成光敏区01；所述Au膜6为蒸镀膜，所述长条形Au膜6采用光刻蚀方法制备，所述光敏区01的宽度从长条矩形中心到两边宽度逐渐变宽；所述光敏面由若干个光敏区组成。
作为具体实施例，本发明响应度空间可变PIN光电探测器，长条矩形I型硅衬底SiO2绝缘层的尺寸为12mm×3.5mm，长条矩形光敏面的尺寸为10mm×2.8mm，所述单个光敏区的长度为10mm，所述单个光敏区的宽度为在所述单个光敏区中心最窄处尺寸为22μm以及在所述单个光敏区两边最宽处的尺寸为63μm。
本发明响应度空间可变PIN光电探测器制作方法，包括以下步骤：
S1、在长条矩形低掺杂浓度的I型硅衬底上淀积10nm厚度的SiO2绝缘层；
S2、采用腐蚀方法，在SiO2绝缘层上没有涂覆光刻胶的区域形成长条矩形开口区域；
S3、采用B扩散工艺将硼离子扩散进开口区域的I型硅衬底中，形成P型光敏区；
S4、在探测器整个表面淀积一层Si3N4增透膜；
S5、采用P扩散工艺将磷离子扩撒在探测器背面形成N型接触区；
S6、采用腐蚀方法，在Si3N4增透膜上形成电极孔；
S7、在整个Si3N4增透膜上蒸镀一层Au膜；
S8、采用光刻和腐蚀的方法在Au膜上刻蚀出一系列宽度从长条矩形中心到两边逐渐变窄的长条形Au膜图形和P电极，并由长条形Au膜的间隙构成光敏区；
S9、采用蒸发的方式在探测器背面制作N电极。
作为具体实施例，本发明响应度空间可变PIN光电探测器制作方法，长条矩形I型硅衬底SiO2绝缘层的尺寸为12mm×3.5mm，长条矩形光敏面的尺寸为10mm×2.8mm，所述单个光敏区的长度为10mm，所述单个光敏区的宽度为在所述单个光敏区中心最窄处尺寸为22μm以及在所述单个光敏区两边最宽处的尺寸为63μm。
由于本发明响应度空间可变PIN光电探测器的光敏区的宽度从长条矩形中心到两边宽度逐渐变宽，且中心最窄处尺寸为22μm，两边最宽处的尺寸为63μm，即接收光照射的光敏面的面积从中心到边缘逐渐变大，由于光敏区的尺寸远远小于光斑尺寸，光斑可同时照射到多个光敏区上，就整个光敏面而言仍可接收到完整的光斑信号。但由于Au膜的遮盖，其中心部位的接收面积较小、边缘部位的接收面积较大，使得本发明响应度空间可变PIN光电探测器的中心部位响应度较低，越往边缘部位的响应度越高，使其在接收到光斑信号面积较大且强度弱和光斑信号面积较小且强度高的光照射时都具有适宜的输出，不会对接收系统的动态响应范围造成影响。
显然，本发明响应度空间可变PIN光电探测器及其制作方法的有益技术效果是能够采用普通工艺技术制作出光敏面中央响应度小、两端响应度大的PIN光电探测器，使得探测器能在光斑信号面积较大且强度弱和光斑信号面积较小且强度高都具有适宜的输出，不会对接收系统的动态响应范围造成影响。

Claims (4)

1.一种响应度空间可变PIN光电探测器，其特征在于，在长条矩形I型硅衬底SiO2绝缘层的长条矩形开口区域设置光敏面，在光敏面增透膜上设置有一系列从长条矩形中心到两边宽度逐渐变窄的长条形Au膜，并由长条形Au膜的间隙构成光敏区；所述Au膜为蒸镀膜，所述长条形Au膜采用光刻蚀方法制备，所述光敏区的宽度从长条矩形中心到两边逐渐变宽；所述光敏面由若干个光敏区组成。
2.根据权利要求1所述响应度空间可变PIN光电探测器，其特征在于，长条矩形I型硅衬底SiO2绝缘层的尺寸为12mm×3.5mm，长条矩形光敏面的尺寸为10mm×2.8mm，所述单个光敏区的长度为10mm，所述单个光敏区的宽度为在所述单个光敏区中心最窄处尺寸为22μm以及在所述单个光敏区两边最宽处的尺寸为63μm。
3.一种响应度空间可变PIN光电探测器制作方法，其特征在于，该方法包括以下步骤：
S1、在长条矩形低掺杂浓度的I型硅衬底上淀积10nm厚度的SiO2绝缘层；
S2、采用腐蚀方法，在SiO2绝缘层上没有涂覆光刻胶的区域形成长条矩形开口区域；
S3、采用B扩散工艺将硼离子扩散进开口区域的I型硅衬底中，形成P型光敏区；
S4、在探测器整个表面淀积一层Si3N4增透膜；
S5、采用P扩散工艺将磷离子扩撒在探测器背面形成N型接触区；
S6、采用腐蚀方法，在Si3N4增透膜上形成电极孔；
S7、在整个Si3N4增透膜上蒸镀一层Au膜；
S8、采用光刻和腐蚀的方法在Au膜上刻蚀出一系列宽度从长条矩形中心到两边逐渐变窄的长条形Au膜图形和P电极，并由长条形Au膜的间隙构成光敏区；
S9、采用蒸发的方式在探测器背面制作N电极。
4.根据权利要求3所述响应度空间可变PIN光电探测器制作方法，其特征在于，长条矩形I型硅衬底SiO2绝缘层的尺寸为12mm×3.5mm，长条矩形光敏面的尺寸为10mm×2.8mm，所述单个光敏区的长度为10mm，所述单个光敏区的宽度为在所述单个光敏区中心最窄处尺寸为22μm以及在所述单个光敏区两边最宽处的尺寸为63μm。
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