CN103646679A - PIN-type isotope nuclear battery - Google Patents
PIN-type isotope nuclear battery Download PDFInfo
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- CN103646679A CN103646679A CN201310513589.0A CN201310513589A CN103646679A CN 103646679 A CN103646679 A CN 103646679A CN 201310513589 A CN201310513589 A CN 201310513589A CN 103646679 A CN103646679 A CN 103646679A
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Abstract
The invention discloses a PIN-type isotope nuclear battery. The PIN-type isotope nuclear battery comprises a radioactive isotope source layer 1, a SiO2 passivation layer 2, a SiO2 dense insulating layer 3, a p-type Ohmic contact electrode 4, a p-type SiC epitaxial layer 5, an n-type SiC epitaxial layer 6, an n-type SiC substrate 7 and an n-type Ohmic contact electrode 8. The PIN-type isotope nuclear battery is characterized in that the doping concentration of the p-type SiC epitaxial layer 5 is in the range from 1*10<19> cm<-3> to 5*10<19> cm<-3>, the doping concentration of the n-type SiC substrate 7 is in the range from 1*10<18> cm<-3> to 7*10<18> cm<-3>, and the n-type SiC epitaxial layer 6 is formed by injecting niobium ions having energy which is in the range from 2000KeV to 2500KeV and having a dosage which is in the range from 5*10<13> cm<-2> to 1*10<15> cm<-2>, wherein the doping concentration of the n-type SiC epitaxial layer 6 is in the range from 1*10<13> cm<-3> to 5*10<14> cm<-3>. According to the invention, the carrier concentration of the intrinsic layer can be reduced and the depletion region width can be increased, so the collection efficiency of generated electron hole pairs can be improved, so that the device open-circuit voltage and energy conversion efficiency can be improved.
Description
Technical field
The present invention relates to the crossing domain of nuclear science technology and microelectric technique, relate in particular to a kind of PIN type nuclear-isotope battery.
Technical background
Nineteen fifty-three, it is found that the β particle that utilizes isotope decay to produce can produce electron hole pair in semiconductor, and this phenomenon is called as β voltage effects.Nineteen fifty-seven, first people are used in power supply supply side by β voltage effects, and successfully experiment produces first radioisotope micro battery.Since 1989, GaN, GaP, AlGaAs, the materials such as polysilicon are utilized the material as β-Voltaic battery in succession.Along with the preparation of semiconductor material with wide forbidden band SiC and the progress of technology, 2006 start, and have in succession occurred the relevant report of the radioisotope micro battery based on SiC on both at home and abroad.
2006, the people such as Chandrashekhar of USA New York Cornell university have proposed a kind of silit PIN eliminant nuclear-isotope battery, and it comprises radioactive isotope power supply, p-type ohmic contact layer, the highly doped SiC layer of p-type, the low-doped SiC layer of p-type, intrinsic layer, the highly doped SiC substrate of N-shaped, Ohm contact electrode from top to bottom successively.In this structure, substrate is the highly doped substrate of N-shaped, and the technique of grown epitaxial layer is immature in the above, easily introduces surface imperfection, device creepage increases, energy conversion rate is lower, and the low-doped SiC layer of p-type forms by involuntary doped epitaxial growth simultaneously, and doping content is higher, the width of depletion region obtaining is less than normal, the charge carrier producing can not all be collected, and device open-circuit voltage diminishes, and energy conversion efficiency reduces.
Summary of the invention
The object of the invention is to avoid the deficiency of above-mentioned prior art, a kind of PIN type nuclear-isotope battery that comprises the N-shaped SiC epitaxial loayer that niobium adulterates and preparation method thereof is proposed, to reduce the carrier concentration of intrinsic layer, increase width of depletion region, improve the collection rate of the electron hole pair producing, and then improve open-circuit voltage and the energy conversion efficiency of device.
For achieving the above object, the invention discloses a kind of PIN type nuclear-isotope battery that comprises niobium Doped n-type epitaxial loayer, comprise successively radioactive isotope power supply layer 1, SiO
2passivation layer 2, SiO
2fine and close insulation course 3, p-type Ohm contact electrode 4, p-type SiC epitaxial loayer 5, N-shaped SiC epitaxial loayer 6, N-shaped SiC substrate 7 and N-shaped Ohm contact electrode 8, is characterized in that: the doping content of p-type SiC epitaxial loayer 5 is 1 * 10
19～5 * 10
19cm
-3, the doping content of N-shaped SiC substrate 7 is 1 * 10
18～7 * 10
18cm
-3, N-shaped SiC epitaxial loayer 6 is to be 2000KeV～2500KeV by Implantation Energy, dosage is 5 * 10
13～1 * 10
15cm
-2niobium ion to form doping content be 1 * 10
13～5 * 10
14cm
-3.
The present invention compared with prior art tool has the following advantages:
The PIN nuclear battery that the present invention makes, because N-shaped epitaxial loayer is to adopt nitrating epitaxial growth, then epitaxial loayer being carried out to niobium ion injection again compensates the free carrier on epitaxial loayer energy level, therefore the charge carrier doping content of N-shaped epitaxial loayer is extremely low, increase width of depletion region, improve the collection rate that produces electron hole pair, and then improved open-circuit voltage and the energy conversion efficiency of device; The thin layer that is simultaneously 0.2um～0.5um due to p-type epitaxial loayer, effectively reduces the barrier effect of epitaxial loayer to incident particle, can effectively improve energy conversion efficiency; In addition because the present invention adopts N-shaped silicon carbide substrates, therefore the growth technique of low price and epitaxial loayer is ripe, simple to operate, be easy to realize.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of PIN type nuclear-isotope battery of the present invention;
Embodiment
With reference to Fig. 1, nuclear battery of the present invention comprises radioactive isotope power supply layer 1, SiO
2passivation layer 2, SiO
2fine and close insulation course 3, p-type Ohm contact electrode 4, p-type SiC epitaxial loayer 5, N-shaped SiC epitaxial loayer 6, N-shaped SiC substrate 7 and N-shaped Ohm contact electrode 8, wherein the doping content of N-shaped SiC substrate 7 is 1 * 10
18～7 * 10
18cm
-3, its back side is by thickness, to be respectively the N-shaped Ohm contact electrode 8 of the Ni/Cr/Au alloy composition of 200nm/50nm/100nm, and front is that thickness is 3um～5um, and doping content is 1 * 10
13～5 * 10
14cm
-3n-shaped SiC epitaxial loayer 6, this N-shaped SiC epitaxial loayer 6 injects formation by niobium ion, top, the left and right of N-shaped SiC epitaxial loayer 6 is that thickness is the SiO of 10nm～20nm
2fine and close insulation course 3, SiO
2fine and close insulation course 3 is that thickness is the SiO of 0.3um～0.5um above
2passivation layer 2, directly over N-shaped SiC epitaxial loayer 6 for doping content is 1 * 10
19～5 * 10
19cm
-3thickness is the highly doped p-type SiC epitaxial loayer 5 of 0.2um～0.5um, highly doped p-type SiC epitaxial loayer 5 above left one side of something is by thickness, to be respectively the p-type Ohm contact electrode 4 of the Ti/Al/Au alloy composition of 50nm/100nm/100nm, and right one side of something is radioactive isotope power supply layer 1.
The preferred embodiment of the method for making of PIN type nuclear-isotope battery of the present invention is as follows.
Step 1: extension N-shaped epitaxial loayer on the highly doped N-shaped substrate of SiC print.
Selecting doping content is 1 * 10
18cm
-3highly doped N-shaped SiC substrate 7, after cleaning, on highly doped N-shaped SiC substrate, epitaxial growth thickness is 4um, the initial N-shaped epitaxial loayer of nitrogen ion doping, its doping content is 1 * 10
15cm
-3, epitaxial temperature is 1570 ℃, pressure 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and impurity source is liquid nitrogen.
Step 2: be 1 * 10 to doping content
15cm
-3initial N-shaped SiC epitaxial loayer carries out niobium ion injection.
(2.1) to doping content, be 1 * 10
15cm
-3initial N-shaped SiC epitaxial loayer carry out niobium ion injection, its niobium ion injection condition is: the energy of Implantation is 2200KeV, implantation dosage is 5 * 10
13cm
-2;
(2.2) the N-shaped SiC epitaxial loayer after Implantation is carried out to high-temperature thermal annealing, make to inject ion redistribution, reduce lattice damage, and then to obtain doping content be 1 * 10
13cm
-3low-doped N-shaped SiC epitaxial loayer 6, the condition of its high-temperature thermal annealing is: annealing temperature is 1450 ℃, annealing time is 30 minutes.
Step 3: the highly doped p-type epitaxial loayer of epitaxial growth.
On described low-doped N-shaped SiC epitaxial loayer, epitaxial growth thickness is 0.5um, the p-type epitaxial loayer 5 of Al-doping, and its doping content is 5 * 10
19cm
-3, epitaxial temperature is 1570 ℃, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, impurity source is trimethyl aluminium.
Step 4: photoetching forms table top.
(4.1) print of p-type epitaxial loayer 5 having been grown adopts RCA cleaning standard to clean;
(4.2), after print has cleaned, in doping content, be 5 * 10
19cm
-3highly doped p-type epitaxial loayer 5 on, with Magnetron Sputtered Al Film, as etch mask layer, use reticle to carry out photoetching, form the needed pattern of etching;
(4.3) on the pattern of etching, by inductively coupled plasma method etching, form table top, the mesa etch degree of depth is 0.6um.
Step 5: carrying out forming SiO on the print surface after mesa etch
2fine and close insulation course.
At 1100 ± 50 ℃ of temperature, the print surface after carrying out mesa etch is carried out to the dry-oxygen oxidation of two hours, form the SiO of 10nm
2fine and close insulation course 3.
Step 6: at SiO
2regrowth SiO on fine and close insulation course
2passivation layer.
In temperature, be 600 ℃, pressure is under 80Pa condition, by low pressure hot wall CVD (Chemical Vapor Deposition) method at SiO
2the SiO that on fine and close insulation course 3, deposit a layer thickness is 0.5um
2passivation layer 2, its reacting gas is silane and oxygen, carrier gas is nitrogen.
Step 7: at SiO
2gluing on passivation layer 2, photoetching making restraining barrier, windows with HF acid corrosion.
(7.1) at SiO
2spin coating photoresist on passivation layer;
(7.2) on photoresist, utilize reticle photoetching making restraining barrier;
(7.3) the buffered HF acid corrosion that is 5% by concentration 10 seconds, at SiO
2in passivation layer, window, the region of windowing is as the effective coverage of nuclear battery.
Step 8: the print front gluing of windowing, use is with the photolithography plate of p-type electrode, make electrode pattern by lithography, by magnetron sputtering deposition thickness, be respectively the Ti/Al/Au alloy of 50nm/100nm/100nm, by ultrasound wave, peel off and form p-type electrode contact figure, simultaneously by magnetron sputtering at print substrate back deposit Ni/Cr/Au alloy, its thickness is respectively 200nm/50nm/100nm, forms N-shaped contact electrode.
Step 9: in the nitrogen atmosphere at 1100 ± 50 ℃ of temperature, whole print is carried out to rapid thermal annealing 3 minutes, form p-type and N-shaped Ohm contact electrode simultaneously.
Step 10: isotope source on optionally electroplating on highly doped p-type epitaxial loayer.
Step 1: extension N-shaped epitaxial loayer on the highly doped N-shaped substrate of SiC print.
Selecting doping content is 5 * 10
18cm
-3highly doped N-shaped SiC substrate 7, after cleaning, on highly doped N-shaped SiC substrate, epitaxial growth thickness is 3um, the initial N-shaped epitaxial loayer of nitrogen ion doping, its doping content is 5 * 10
15cm
-3, epitaxial temperature is 1570 ℃, pressure 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and impurity source is liquid nitrogen.
Step 2: be 5 * 10 to doping content
15cm
-3initial N-shaped SiC epitaxial loayer carries out niobium ion injection.
(2.1) to doping content, be 5 * 10
15cm
-3initial N-shaped SiC epitaxial loayer carry out niobium ion injection, its niobium ion injection condition is: the energy of Implantation is 2000KeV, implantation dosage is 1 * 10
15cm
-2;
(2.2) the N-shaped SiC epitaxial loayer after Implantation is carried out to high-temperature thermal annealing, make to inject ion redistribution, reduce lattice damage, and then to obtain doping content be 5 * 10
14cm
-3low-doped N-shaped SiC epitaxial loayer 6, the condition of its high-temperature thermal annealing is: annealing temperature is 1550 ℃, annealing time is 40 minutes.
Step 3: the highly doped p-type epitaxial loayer of epitaxial growth.
On described low-doped epitaxial loayer, epitaxial growth thickness is 0.4um, the p-type epitaxial loayer 5 of Al-doping, and its doping content is 1 * 10
19em
-3, epitaxial temperature is 1570 ℃, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, impurity source is trimethyl aluminium.
Step 4: photoetching forms table top.
(4.1) print of p-type epitaxial loayer 5 having been grown adopts RCA cleaning standard to clean;
(4.2), after print has cleaned, in doping content, be 1 * 10
19cm
-3highly doped p-type epitaxial loayer 5 on, with Magnetron Sputtered Al Film, as etch mask layer, use reticle to carry out photoetching, form the needed pattern of etching;
(4.3) on the pattern of etching, by inductively coupled plasma method etching, form table top, the mesa etch degree of depth is 0.6um.
Step 5: carrying out forming SiO on the print surface after mesa etch
2fine and close insulation course.
At 1100 ± 50 ℃ of temperature, the print surface after carrying out mesa etch is carried out to the dry-oxygen oxidation of two hours, form the SiO of 20nm
2fine and close insulation course 3.
Step 6: at SiO
2regrowth SiO on fine and close insulation course
2passivation layer.
In temperature, be 600 ℃, pressure is under 80Pa condition, by low pressure hot wall CVD (Chemical Vapor Deposition) method at SiO
2the SiO that on fine and close insulation course 3, deposit a layer thickness is 0.4um
2passivation layer 2, its reacting gas is silane and oxygen, carrier gas is nitrogen.
Step 7: at SiO
2gluing on passivation layer 2, photoetching making restraining barrier, windows with HF acid corrosion.
(7.1) at SiO
2spin coating photoresist on passivation layer;
(7.2) on photoresist, utilize reticle photoetching making restraining barrier;
(7.3) the buffered HF acid corrosion that is 5% by concentration 10 seconds, at SiO
2in passivation layer, window, the region of windowing is as the effective coverage of nuclear battery.
Step 8: the print front gluing of windowing, use is with the photolithography plate of p-type electrode, make electrode pattern by lithography, by magnetron sputtering deposition thickness, be respectively 50nm/100nm/100nmTi/Al/Au alloy, by ultrasound wave, peel off and form p-type electrode contact figure, simultaneously by magnetron sputtering at print substrate back deposit Ni/Cr/Au alloy, its thickness is respectively 200nm/50nm/100nm, forms N-shaped contact electrode.
Step 9: in the nitrogen atmosphere at 1100 ± 50 ℃ of temperature, whole print is carried out to rapid thermal annealing 3 minutes, form p-type and N-shaped Ohm contact electrode simultaneously.
Step 10: isotope source in molecular plating optionally on highly doped p-type epitaxial loayer.
Steps A: extension N-shaped epitaxial loayer on the highly doped N-shaped substrate of SiC print.
Selecting doping content is 7 * 10
18cm
-3highly doped N-shaped SiC substrate 7, after cleaning, on highly doped N-shaped SiC substrate, epitaxial growth thickness is 5um, the initial N-shaped epitaxial loayer of nitrogen ion doping, its doping content is 2 * 10
15cm
-3, epitaxial temperature is 1570 ℃, pressure 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, and impurity source is liquid nitrogen.
Step B: be 2 * 10 to doping content
15cm
-3initial N-shaped SiC epitaxial loayer carries out niobium ion injection.
(B1) to doping content, be 2 * 10
15cm
-3initial N-shaped SiC epitaxial loayer carry out niobium ion injection, its niobium ion injection condition is: the energy of Implantation is 2500KeV, implantation dosage is 1 * 10
14cm
-2;
(B2) the N-shaped SiC epitaxial loayer after Implantation is carried out to high-temperature thermal annealing, make to inject ion redistribution, reduce lattice damage, and then to obtain doping content be 5 * 10
13cm
-3low-doped N-shaped SiC epitaxial loayer 6, the condition of its high-temperature thermal annealing is: annealing temperature is 1650 ℃, annealing time is 20 minutes.
Step C: the highly doped p-type epitaxial loayer of epitaxial growth.
On described low-doped epitaxial loayer, epitaxial growth thickness is 0.2um, the p-type epitaxial loayer 5 of Al-doping, and its doping content is 2 * 10
19cm
-3, epitaxial temperature is 1570 ℃, and pressure is 100mbar, and reacting gas is silane and propane, and carrier gas is pure hydrogen, impurity source is trimethyl aluminium.
Step D: photoetching forms table top.
(D1) print of p-type epitaxial loayer 5 having been grown adopts RCA cleaning standard to clean;
(D2), after print has cleaned, in doping content, be 2 * 10
19cm
-3highly doped p-type epitaxial loayer 5 on, with Magnetron Sputtered Al Film, as etch mask layer, use reticle to carry out photoetching, form the needed pattern of etching;
(D3) on the pattern of etching, by inductively coupled plasma method etching, form table top, the mesa etch degree of depth is 0.5um.
Step e: carrying out forming SiO on the print surface after mesa etch
2fine and close insulation course.
At 1100 ± 50 ℃ of temperature, the print surface after carrying out mesa etch is carried out to the dry-oxygen oxidation of two hours, form the SiO of 15nm
2fine and close insulation course 3.
Step F: at SiO
2regrowth SiO on fine and close insulation course
2passivation layer.
In temperature, be 600 ℃, pressure is under 80Pa condition, by low pressure hot wall CVD (Chemical Vapor Deposition) method at SiO
2the SiO that on fine and close insulation course 3, deposit a layer thickness is 0.3um
2 passivation layer 2, its reacting gas is silane and oxygen, carrier gas is nitrogen.
Step G: at SiO
2gluing on passivation layer 2, photoetching making restraining barrier, windows with HF acid corrosion.
(G1) at SiO
2spin coating photoresist on passivation layer;
(G2) on photoresist, utilize reticle photoetching making restraining barrier;
(G3) the buffered HF acid corrosion that is 5% by concentration 10 seconds, at SiO
2in passivation layer, window, the region of windowing is as the effective coverage of nuclear battery.
Step H: the print front gluing of windowing, use is with the photolithography plate of p-type electrode, make electrode pattern by lithography, by magnetron sputtering deposition thickness, be respectively 50nm/100nm/100nmTi/Al/Au alloy, by ultrasound wave, peel off and form p-type electrode contact figure, simultaneously by magnetron sputtering at print substrate back deposit Ni/Cr/Au alloy, its thickness is respectively 200nm/50nm/100nm, forms N-shaped contact electrode.
Step I: in the nitrogen atmosphere at 1100 ± 50 ℃ of temperature, whole print is carried out to rapid thermal annealing 3 minutes, form p-type and N-shaped Ohm contact electrode simultaneously.
Step J: isotope source in electroless plating optionally on highly doped p-type epitaxial loayer.
From the above description of this invention, can obviously learn, the present invention can change with many forms, and energy and dosage that particularly niobium ion injects need carrier concentration according to actual needs to determine.And these variations can not be considered to surpass technological thought of the present invention and scope.And, to those skilled in the art, within these apparent variant are all included in the scope of the claims in the present invention book.
Claims (5)
1. a PIN type nuclear-isotope battery, comprises radioactive isotope power supply layer (1), SiO from top to bottom successively
2passivation layer (2), SiO
2fine and close insulation course (3), p-type Ohm contact electrode (4), p-type SiC epitaxial loayer (5), N-shaped SiC epitaxial loayer (6), N-shaped SiC substrate (7) and N-shaped Ohm contact electrode (8), is characterized in that: the doping content of p-type SiC epitaxial loayer (5) is 1 * 10
19～5 * 10
19cm
-3, the doping content of N-shaped SiC substrate (7) is 1 * 10
18～7 * 10
18cm
-3, the doping content of N-shaped SiC epitaxial loayer (6) is 1 * 10
13～5 * 10
14cm
-3, and be 2000KeV～2500KeV by Implantation Energy, dosage is 5 * 10
13～1 * 10
15cm
-2niobium ion form.
2. the PIN type nuclear-isotope battery of a kind of niobium Doped n-type epitaxial loayer according to claim 1, is characterized in that the thickness of described N-shaped SiC epitaxial loayer (6) is 3um～5um.
3. the PIN type nuclear-isotope battery of a kind of niobium Doped n-type epitaxial loayer according to claim 1, is characterized in that the thickness of described p-type SiC epitaxial loayer (5) is 0.2um～0.5um.
4. the PIN type nuclear-isotope battery of a kind of niobium Doped n-type epitaxial loayer according to claim 1, is characterized in that described SiO
2the thickness of fine and close insulation course (3) is 10nm～20nm.
5. the PIN type nuclear-isotope battery of a kind of niobium Doped n-type epitaxial loayer according to claim 1, is characterized in that described SiO
2the thickness of passivation layer (2) is 0.3um～0.5um.
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|---|---|---|---|
| CN201310513589.0A CN103646679A (en) | 2013-10-26 | 2013-10-26 | PIN-type isotope nuclear battery |
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|---|---|---|---|
| CN201310513589.0A CN103646679A (en) | 2013-10-26 | 2013-10-26 | PIN-type isotope nuclear battery |
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|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594138A (en) * | 2013-10-26 | 2014-02-19 | 溧阳市浙大产学研服务中心有限公司 | Method for manufacturing PIN nuclear isotope battery |
| CN110556192A (en) * | 2018-02-08 | 2019-12-10 | 长安大学 | Pm-147 silicon carbide slow-change PN type isotope battery and manufacturing method thereof |
| CN113539542A (en) * | 2021-07-19 | 2021-10-22 | 中国人民解放军火箭军工程大学 | Radon gas enrichment type alpha-ray nuclear battery |
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|---|---|---|---|---|
| CN102254581A (en) * | 2011-06-30 | 2011-11-23 | 西安电子科技大学 | SiC ring electrode PIN-type nuclear battery |
| CN102354540A (en) * | 2011-10-19 | 2012-02-15 | 西安电子科技大学 | I-layer vanadium-doped PIN-type atomic battery and manufacturing method thereof |
| CN103021492A (en) * | 2012-12-27 | 2013-04-03 | 长安大学 | Silicon carbide transverse-pin penny-sized nuclear battery and manufacturing method thereof |
| CN103594138A (en) * | 2013-10-26 | 2014-02-19 | 溧阳市浙大产学研服务中心有限公司 | Method for manufacturing PIN nuclear isotope battery |
-
2013
- 2013-10-26 CN CN201310513589.0A patent/CN103646679A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102254581A (en) * | 2011-06-30 | 2011-11-23 | 西安电子科技大学 | SiC ring electrode PIN-type nuclear battery |
| CN102354540A (en) * | 2011-10-19 | 2012-02-15 | 西安电子科技大学 | I-layer vanadium-doped PIN-type atomic battery and manufacturing method thereof |
| CN103021492A (en) * | 2012-12-27 | 2013-04-03 | 长安大学 | Silicon carbide transverse-pin penny-sized nuclear battery and manufacturing method thereof |
| CN103594138A (en) * | 2013-10-26 | 2014-02-19 | 溧阳市浙大产学研服务中心有限公司 | Method for manufacturing PIN nuclear isotope battery |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594138A (en) * | 2013-10-26 | 2014-02-19 | 溧阳市浙大产学研服务中心有限公司 | Method for manufacturing PIN nuclear isotope battery |
| CN110556192A (en) * | 2018-02-08 | 2019-12-10 | 长安大学 | Pm-147 silicon carbide slow-change PN type isotope battery and manufacturing method thereof |
| CN113539542A (en) * | 2021-07-19 | 2021-10-22 | 中国人民解放军火箭军工程大学 | Radon gas enrichment type alpha-ray nuclear battery |
| CN113539542B (en) * | 2021-07-19 | 2024-01-30 | 中国人民解放军火箭军工程大学 | Radon gas enrichment type alpha ray nuclear battery |
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Application publication date: 20140319 |