CN103633163A - 晶体硅太阳能电池组件 - Google Patents
晶体硅太阳能电池组件 Download PDFInfo
- Publication number
- CN103633163A CN103633163A CN201210297038.0A CN201210297038A CN103633163A CN 103633163 A CN103633163 A CN 103633163A CN 201210297038 A CN201210297038 A CN 201210297038A CN 103633163 A CN103633163 A CN 103633163A
- Authority
- CN
- China
- Prior art keywords
- layer
- negative electrode
- electrode layer
- type silicon
- silicon solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 210000003850 cellular structure Anatomy 0.000 title abstract 2
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000004332 silver Substances 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 230000005684 electric field Effects 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 238000002161 passivation Methods 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000002002 slurry Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 6
- 210000004027 cell Anatomy 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明涉及一种晶体硅太阳能电池组件，具有依次层叠的负极层、N型硅层、P型硅层和正极层；所述负极层的表面上设有通过网版图形印刷形成的主栅以及与主栅垂直且等间距分布的副栅；所述正极层上具有背电极和背电场；所述主栅上均布有若干三角形的小孔。本发明的主栅上均布有若干三角形的小孔；可以减少银浆的使用，降低了制作成本。
Description
技术领域
本发明涉及太阳能电池技术领域，特别涉及一种晶体硅太阳能电池组件。
背景技术
太阳能电池组件，也叫太阳能电池板，是太阳能发电系统中的核心部分，也是太阳能发电系统中最重要的部分。太阳能电池是通过光电效应或者光化学效应直接把光能转化成电能的装置。太阳能电池作为绿色能源，越来越受到人们的关注。传统的太阳能电池组件的主栅采用银印制栅线，成本较高。
发明内容
本发明的目的是克服现有技术存在的缺陷，提供一种制作简便的低成本的晶体硅太阳能电池组件。
实现本发明目的的技术方案是：一种晶体硅太阳能电池组件，具有依次层叠的负极层、N型硅层、P型硅层和正极层；所述负极层的表面上设有通过网版图形印刷形成的主栅以及与主栅垂直且等间距分布的副栅；所述正极层上具有背电极和背电场；所述主栅上均布有若干三角形的小孔。
上述技术方案所述负极层为银层。
上述技术方案所述正极层为铝层。
上述技术方案所述负极层和N型硅层之间还设有氮化硅减反射膜层。
上述技术方案所述氮化硅减反射膜层和N型硅层之间还设有第一二氧化硅钝化膜层。
上述技术方案所述P型硅层和正极层之间还设有第二二氧化硅钝化膜层。
采用上述技术方案后，本发明具有以下积极的效果：
（1）本发明的主栅上均布有若干三角形的小孔；可以减少银浆的使用，降低了制作成本。
（2）本发明采用PECVD沉积氮化硅膜作为太阳能组件的减反射膜层,主要作用是减少光的反射，而且氮化硅膜含有大量的氢，可以很好的钝化硅中的表面悬挂键，从而提高了载流子迁移率；同时，在氮化硅膜与N型硅之间沉积二氧化硅膜，可以更有效的减少入射光在太阳能电池表面的反射损失，提高太阳能组件吸收阳光的量，并能让太阳能组件吸收来自各个角度的全部阳光光谱，从而使太阳能电站的经济效益大为改善。
（3）本发明的正极层和P型硅层之间设有第二二氧化硅钝化膜层；二氧化硅具有吸杂、钝化的作用，可以提高反射效率。
附图说明
为了使本发明的内容更容易被清楚地理解，下面根据具体实施例并结合附图，对本发明作进一步详细的说明，其中
图1为本发明的结构示意图；
图2为本发明的负极层的结构示意图；
图中1.负极层，11.主栅，111.小孔，12.副栅，2.N型硅层，3.P型硅层，4.正极层，41.背电极，42.背电场，5.氮化硅减反射膜层，6.第一二氧化硅钝化膜层，7.第二二氧化硅钝化膜层。
具体实施方式
（实施例1）
见图1和图2，本发明具有依次层叠的负极层1、N型硅层2、P型硅层3和正极层4；负极层1为银层，负极层1的表面上设有通过网版图形印刷形成的主栅11以及与主栅11垂直且等间距分布的副栅12；主栅11上均布有若干三角形的小孔111；负极层1和N型硅层2之间还设有氮化硅减反射膜层5；氮化硅减反射膜层5和N型硅层2之间设有第一二氧化硅钝化膜层6；正极层4为铝层，正极层4上具有背电极41和背电场42； P型硅层3和正极层4之间还设有第二二氧化硅钝化膜层7。
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (6)
1.一种晶体硅太阳能电池组件，具有依次层叠的负极层（1）、N型硅层（2）、P型硅层（3）和正极层（4）；所述负极层（1）的表面上设有通过网版图形印刷形成的主栅（11）以及与主栅（11）垂直且等间距分布的副栅（12）；所述正极层（4）上具有背电极（41）和背电场（42）；其特征在于：所述主栅（11）上均布有若干三角形的小孔（111）。
2.根据权利要求1所述的晶体硅太阳能电池组件，其特征在于：所述负极层（1）为银层。
3.根据权利要求1所述的晶体硅太阳能电池组件，其特征在于：所述正极层（4）为铝层。
4.根据权利要求1至3任一所述的晶体硅太阳能电池组件，其特征在于：所述负极层（1）和N型硅层（2）之间还设有氮化硅减反射膜层（5）。
5.根据权利要求4所述的晶体硅太阳能电池组件，其特征在于：所述氮化硅减反射膜层（5）和N型硅层（2）之间还设有第一二氧化硅钝化膜层（6）。
6.根据权利要求5所述的晶体硅太阳能电池组件，其特征在于：所述P型硅层（3）和正极层（4）之间还设有第二二氧化硅钝化膜层（7）。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210297038.0A CN103633163A (zh) | 2012-08-20 | 2012-08-20 | 晶体硅太阳能电池组件 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210297038.0A CN103633163A (zh) | 2012-08-20 | 2012-08-20 | 晶体硅太阳能电池组件 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103633163A true CN103633163A (zh) | 2014-03-12 |
Family
ID=50213985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210297038.0A Pending CN103633163A (zh) | 2012-08-20 | 2012-08-20 | 晶体硅太阳能电池组件 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103633163A (zh) |
-
2012
- 2012-08-20 CN CN201210297038.0A patent/CN103633163A/zh active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN211295118U (zh) | 一种双面钝化晶体硅太阳能电池 | |
| CN102969368A (zh) | 太阳能电池片的电极结构 | |
| CN204538038U (zh) | 提升光能利用率的太阳能组件 | |
| TWI408821B (zh) | ||
| CN103633162A (zh) | 晶体硅太阳能电池组件 | |
| CN202695459U (zh) | 一种晶体硅太阳能电池组件 | |
| CN202695455U (zh) | 一种带保护层的晶体硅太阳能电池组件 | |
| CN205264718U (zh) | 一种屋顶应用高效光伏组件 | |
| CN202695468U (zh) | 一种晶体硅太阳能电池组件 | |
| CN202695469U (zh) | 一种晶体硅太阳能电池组件 | |
| TW201519573A (zh) | 具多重擷取光源發電之疊組整合式發電裝置 | |
| CN202855746U (zh) | 一种高转化率的太阳能组件 | |
| CN202695467U (zh) | 一种低成本的太阳能组件 | |
| CN103633163A (zh) | 晶体硅太阳能电池组件 | |
| CN202695457U (zh) | 一种带保护膜的晶体硅太阳能电池组件 | |
| CN103633160A (zh) | 晶体硅太阳能电池组件 | |
| CN203589056U (zh) | 双面太阳能光伏组件 | |
| CN202695461U (zh) | 一种带双层保护膜的太阳能组件 | |
| CN202695458U (zh) | 一种太阳能组件 | |
| CN103633161A (zh) | 低成本的太阳能组件 | |
| CN202695456U (zh) | 一种带保护层的太阳能组件 | |
| CN202120925U (zh) | 一种晶体硅太阳电池 | |
| CN103633155A (zh) | 带保护膜的晶体硅太阳能电池组件 | |
| CN103633164A (zh) | 带保护层的晶体硅太阳能电池组件 | |
| CN103633156A (zh) | 带双层保护膜的太阳能组件 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140312 |