CN103633155A - 带保护膜的晶体硅太阳能电池组件 - Google Patents
带保护膜的晶体硅太阳能电池组件 Download PDFInfo
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- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000002161 passivation Methods 0.000 claims abstract description 11
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 claims description 9
- 230000005684 electric field Effects 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims description 3
- 210000004027 cell Anatomy 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 2
- 238000001228 spectrum Methods 0.000 abstract description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
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- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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Abstract
本发明涉及一种带保护膜的晶体硅太阳能电池组件，具有依次层叠的负极层、N型硅层、P型硅层、正极层、氮化硅减反射膜层和二氧化硅钝化层；所述氮化硅减反射膜层设置在负极层和N型硅层之间；所述二氧化硅钝化层设置在正极层和P型硅层之间；本发明采用PECVD沉积氮化硅膜作为太阳能组件的减反射膜层, 可以减少光的反射，而且氮化硅膜含有大量的氢，可以很好的钝化硅中的表面悬挂键，提高载流子迁移率；同时，在氮化硅膜与N型硅之间沉积二氧化硅膜，可以更有效的减少入射光在太阳能电池表面的反射损失，提高太阳能组件吸收阳光的量，并能让太阳能组件吸收来自各个角度的全部阳光光谱，从而使太阳能电站的经济效益大为改善。
Description
技术领域
本发明涉及太阳能电池技术领域，特别涉及一种带保护膜的晶体硅太阳能电池组件。
背景技术
太阳能电池组件，也叫太阳能电池板，是太阳能发电系统中的核心部分，也是太阳能发电系统中最重要的部分。太阳能电池是通过光电效应或者光化学效应直接把光能转化成电能的装置。太阳能电池作为绿色能源，越来越受到人们的关注。晶体硅材料质量对太阳电池的效率起至关重要的作用，晶体硅基体材料表面缺陷密度很高，如大量的悬挂键、杂质和断键等，导致硅片表面少子寿命大大降低，复合速率较低。
发明内容
本发明的目的是克服现有技术存在的缺陷，提供一种转换效率高的带保护膜的晶体硅太阳能电池组件。
实现本发明目的的技术方案是：一种带保护膜的晶体硅太阳能电池组件，具有依次层叠的负极层、N型硅层、P型硅层和正极层；还具有氮化硅减反射膜层和二氧化硅钝化层；所述氮化硅减反射膜层设置在负极层和N型硅层之间；所述二氧化硅钝化层设置在正极层和P型硅层之间。
上述技术方案所述负极层为银层。
上述技术方案所述正极层为铝层。
上述技术方案所述负极层的表面上设有通过网版图形印刷形成的主栅以及与主栅垂直且等间距分布的副栅。
上述技术方案所述正极层上具有背电极和背电场。
采用上述技术方案后，本发明具有以下积极的效果：
（1）本发明采用PECVD沉积氮化硅膜作为太阳能组件的减反射膜层,主要作用是减少光的反射，而且氮化硅膜含有大量的氢，可以很好的钝化硅中的表面悬挂键，从而提高了载流子迁移率；同时，在氮化硅膜与N型硅之间沉积二氧化硅膜，可以更有效的减少入射光在太阳能电池表面的反射损失，提高太阳能组件吸收阳光的量，并能让太阳能组件吸收来自各个角度的全部阳光光谱，从而使太阳能电站的经济效益大为改善。
（2）本发明应用银浆料制作电极和背电场，优化图形设计，不仅确保了电极良好的导电性、可焊性以及背电场的平整性，更具有优异的印刷性能、附着力高、弯曲度低和转换效率高的优点。
附图说明
为了使本发明的内容更容易被清楚地理解，下面根据具体实施例并结合附图，对本发明作进一步详细的说明，其中
图1为本发明的结构示意图；
图中1.负极层，11.主栅，12.副栅，2.N型硅层，3.P型硅层，4.正极层，41.背电极，42.背电场，5.氮化硅减反射膜层，6.二氧化硅钝化层。
具体实施方式
（实施例1）
见图1，本发明具有依次层叠的负极层1、N型硅层2、P型硅层3、正极层4、氮化硅减反射膜层5和二氧化硅钝化层6；负极层1为银层，负极层1的表面上设有通过网版图形印刷形成的主栅11以及与主栅11垂直且等间距分布的副栅12；正极层4为铝层，正极层4上具有背电极41和背电场42；氮化硅减反射膜层5设置在负极层1和N型硅层2之间；二氧化硅钝化层6设置在正极层4和P型硅层3之间。
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (5)
1.一种带保护膜的晶体硅太阳能电池组件，具有依次层叠的负极层（1）、N型硅层（2）、P型硅层（3）和正极层（4）；其特征在于：还具有氮化硅减反射膜层（5）和二氧化硅钝化层（6）；所述氮化硅减反射膜层（5）设置在负极层（1）和N型硅层（2）之间；所述二氧化硅钝化层（6）设置在正极层（4）和P型硅层（3）之间。
2.根据权利要求1所述的带保护膜的晶体硅太阳能电池组件，其特征在于：所述负极层（1）为银层。
3.根据权利要求2所述的带保护膜的晶体硅太阳能电池组件，其特征在于：所述正极层（4）为铝层。
4.根据权利要求3所述的带保护膜的晶体硅太阳能电池组件，其特征在于：所述负极层（1）的表面上设有通过网版图形印刷形成的主栅（11）以及与主栅（11）垂直且等间距分布的副栅（12）。
5.根据权利要求4所述的带保护膜的晶体硅太阳能电池组件，其特征在于：所述正极层（4）上具有背电极（41）和背电场（42）。
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