CN103633081A

CN103633081A - High-isolation voltage electric-light-electric isolation structure

Info

Publication number: CN103633081A
Application number: CN201310626908.9A
Authority: CN
Inventors: 李冰; 徐道润; 陈春霞; 欧熠; 龚磊; 李祖安; 张佳宁; 李洪玉; 谢俊聃; 成精折; 曾铮; 肖清惠
Original assignee: CETC 44 Research Institute
Current assignee: CETC 44 Research Institute
Priority date: 2013-12-02
Filing date: 2013-12-02
Publication date: 2014-03-12

Abstract

A high-isolation voltage electric-light-electric isolation structure comprises a light source chip and a light detection chip which are arranged by being opposite in position; the space between the light source chip and the light detection chip and the space around the light source chip and the light detection chip are filled by insulation light guide glue; the innovative points are that a light guide tube is arranged between the light source chip and the light detection chip; an inner hole of the light guide tube, the light source chip and the light detection chip are arranged by being aligned; insulation light guide glue is injected in the light guide tube of which the dielectric strength is greater than that of the insulation light guide glue. The high-isolation voltage electric-light-electric isolation structure has the beneficial effects that the problem that the light quantity reaching the light detection chip is reduced because of the rising of an isolation voltage is solved, and the electric-light-electric isolation structure can obtain the larger isolation voltage.

Description

The electrical-optical of high-isolating-electric isolation structure

Technical field

The present invention relates to a kind of electric isolation technology, relate in particular to a kind of electrical-optical-electric isolation structure of high-isolating.

Background technology

The basic principle of electrical-optical-electric isolation structure is: light source chip is converted to light signal by the signal of telecommunication of front stage circuits, exports late-class circuit after being converted to the signal of telecommunication after the collection of optical signals optical detection chip, thus the electrical isolation of late-class circuit before realizing.This electrical-optical-electric isolation structure can be used in the devices such as photoelectrical coupler, photoelectric sensor.

In Practical Project, may occur that the potential difference between front late-class circuit reaches volts up to ten thousand and even several ten thousand volts, again the volume of electrical isolation device is had to strict restriction simultaneously, this just requires electrical-optical-electric isolation structure to have the feature of high-isolating and miniaturization simultaneously, existing a kind of Typical solutions as shown in Figure 1, while adopting the scheme in Fig. 1, in order to improve the isolation voltage of electrical-optical-electric isolation structure, before the mode of the general spacing by increase light source chip and optical detection chip reduces, electric field strength between late-class circuit, and the insulation leaded light glue of the space-filling high dielectric strength between light source chip and optical detection chip and around the two, to improve the breakdown characteristics of electrical-optical-electric isolation structure, the problem existing is: in theory, spacing between light source chip and optical detection chip is larger, the isolation voltage of electrical-optical-electric isolation structure is also higher, but in practical application, the light quantity that the illumination that light source chip sends is mapped on optical detection chip but can reduce along with the increase of spacing, after the isolation voltage of electrical-optical-electric isolation structure is increased to more than 10,000 volts, if continue, increase spacing, the signal of telecommunication that will cause optical detection chip to be changed out is crossed weak so that cannot be satisfied the demands, thereby the further raising of isolation voltage is caused to bottleneck.

Summary of the invention

For the problem in background technology, the present invention proposes a kind of electrical-optical-electric isolation structure of high-isolating, comprise that position aligns mutually light source chip and the optical detection chip of setting; Between light source chip and optical detection chip and the two space around is all insulated leaded light glue and fills; Its improvement is: between described light source chip and optical detection chip, be provided with a photoconductive tube, photoconductive tube endoporus and light source chip and optical detection chip align setting, in photoconductive tube, be filled with insulation leaded light glue, the dielectric strength of photoconductive tube is greater than the dielectric strength of insulation leaded light glue.

Principle of the present invention is: in prior art, the isolation voltage of electrical-optical-electric isolation structure is promoted and causes the main cause of bottleneck to be: along with the increase of light source chip and optical detection inter-chip pitch, the radiating area of the light that light source chip sends is also larger, and this just causes the light quantity that optical detection chip collects to reduce, adopt after the present invention program, owing to being subject to the restriction of photoconductive tube, the light that light source chip sends can be to outdiffusion, can under the reflex of photoconductive tube inwall, to optical detection chip place, collect on the contrary, thereby the radiating area of light is controlled in less scope, to solve, increase the also problem of corresponding increase of radiating area that causes light because of spacing, the light quantity that final assurance is irradiated on optical detection chip meets the demands, on this basis, just can make the spacing between light source chip and optical detection chip significantly increase, further to increase the isolation voltage of electrical-optical-electric isolation structure, meet the requirement of high-isolating application scenario.

Preferably, described photoconductive tube adopts beryllium oxide ceramics to make.

Useful technique effect of the present invention is: solved the light quantity of arrival optical detection chip because of the problem that isolation voltage rises and reduces, made electrical-optical-electric isolation structure can obtain larger isolation voltage.

Accompanying drawing explanation

Fig. 1, existing electrical-optical-electric isolation structure principle schematic;

Fig. 2, principle schematic of the present invention;

Fig. 3, photoconductive tube structural upright schematic diagram;

In Fig. 1,2, region shown in dotted line frame is the filling scope of insulation leaded light glue;

In figure, the corresponding parts of each mark are respectively: be used to all parts the matrix 1, light source chip 2, optical detection chip 3, photoconductive tube 4 of supporting is provided, for the carrier 1 of light source chip is installed, for the carrier 26 of optical detection chip is installed.

Embodiment

The electrical-optical of high-isolating-electric isolation structure, comprises that position aligns mutually light source chip 2 and the optical detection chip 3 of setting; Between light source chip 2 and optical detection chip 3 and the two space around is all insulated leaded light glue and fills; Its innovation is: between described light source chip 2 and optical detection chip 3, be provided with a photoconductive tube 4, photoconductive tube 4 endoporus and light source chip 2 and optical detection chip 3 align setting, in photoconductive tube 4, be filled with insulation leaded light glue, the dielectric strength of photoconductive tube 4 is greater than the dielectric strength of insulation leaded light glue.

Further, described photoconductive tube 4 adopts beryllium oxide ceramics to make.

Embodiment:

In prior art, the spacing of light source chip 2 and optical detection chip 3 is traditionally arranged to be 1.8mm left and right, now, the isolation voltage of electrical-optical-electric isolation structure is about 10,000 volts, if further increase again the spacing of light source chip 2 and optical detection chip 3, the signal of telecommunication that optical detection chip 3 is changed out weakens rapidly, and after light source chip 2 and optical detection chip 3 are increased to more than 2.2mm, the signal of telecommunication that optical detection chip 3 is changed out will decay to the degree that cannot satisfy the demands.

Adopt the present invention program, more than the spacing of light source chip 2 and optical detection chip 3 can extend to 6mm, isolation voltage can reach more than 30,000 volts, and has the potentiality of further raising.

Claims

1. the electrical-optical of high-isolating-electric isolation structure, comprises that position aligns mutually the light source chip of setting (2) and optical detection chip (3); Between light source chip (2) and optical detection chip (3) and the two space around is all insulated leaded light glue and fills; It is characterized in that: between described light source chip (2) and optical detection chip (3), be provided with a photoconductive tube (4), photoconductive tube (4) endoporus and light source chip (2) and optical detection chip (3) align setting, in photoconductive tube (4), be filled with insulation leaded light glue, the dielectric strength of photoconductive tube (4) is greater than the dielectric strength of insulation leaded light glue.

2. the electrical-optical of high-isolating according to claim 1-electric isolation structure, is characterized in that: described photoconductive tube (4) adopts beryllium oxide ceramics to make.