CN103606747A - Thin-substrate phase amplitude correction slot line difference beam planar horn antenna - Google Patents
Thin-substrate phase amplitude correction slot line difference beam planar horn antenna Download PDFInfo
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- CN103606747A CN103606747A CN201310618314.3A CN201310618314A CN103606747A CN 103606747 A CN103606747 A CN 103606747A CN 201310618314 A CN201310618314 A CN 201310618314A CN 103606747 A CN103606747 A CN 103606747A
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Abstract
The invention discloses a thin-substrate phase amplitude correction slot line difference beam planar horn antenna, and relates to a horn antenna. The thin-substrate phase amplitude correction slot line difference beam planar horn antenna comprises a micro-strip feeder (2), a horn antenna body (3) and slot line horns (4), wherein the micro-strip feeder (2), the horn antenna body (3) and the slot line horns (4) are arranged on a dielectric substrate (1), the horn antenna body (3) comprises a first metal plane (7), a second metal plane (8) and two metallization through hole horn side walls (9), the horn antenna body (3) is provided with an odd number of metallization through hole arrays (11), and an even number of dielectric-loaded waveguides (15), the widths of the dielectric-loaded waveguides (15) on an aperture surface (10) of the horn antenna body (3) are equal, each dielectric-loaded waveguide (15) is connected with the slot line horns (4), a left-half antenna (13) and a right-half antenna (14) are arranged symmetrically, and the slot line horns (4) connected with the left-half antenna (13) and the slot line horns (4) connected with the right-half antenna (14) are arranged symmetrically. Electromagnetic waves can reach the slot line horns in an equal-amplitude and in-phase mode and then carry out radiation, and the direction of polarization of a radiation field is parallel to the dielectric substrate; the thin-substrate phase amplitude correction slot line difference beam planar horn antenna can be manufactured with the thin substrate, and is high in gain, large in zero drawdown, low in cost and compact in structure.
Description
Technical field
The present invention relates to a kind of horn antenna, especially a kind of thin substrate phase amplitude is proofreaied and correct line of rabbet joint difference beam plane horn antenna.
Background technology
Horn antenna has a wide range of applications in the systems such as satellite communication, terrestrial microwave link and radio telescope.But the huge physical dimension of three-dimensional horn antenna has restricted its application and development in planar circuit.In recent years, the proposition of substrate integrated waveguide technology and development have well promoted the development of plane horn antenna.Substrate integration wave-guide have size little, lightweight, be easy to the advantages such as integrated and processing and fabricating.The substrate integration wave-guide plane horn antenna of the plane based on substrate integration wave-guide, except having the feature of horn antenna, has also well been realized miniaturization, the lightness of horn antenna, and has been easy to be integrated in microwave and millimeter wave planar circuit.Traditional substrate integration wave-guide plane horn antenna have a restriction, the thickness of antenna horn aperture substrate is greater than 1/10th operation wavelengths, antenna just can have good radiance, not so due to reflection, the energy emission in antenna is not gone out.So just require the thickness of antenna substrate can not be too thin, at L-band etc., compared with low-frequency range, to meet this requirement very difficult especially, very thick substrate not only volume and weight is very large, offset integrated advantage, but also increased cost, the polarised direction of these antenna radiation field is generally all perpendicular to medium substrate in addition, and some application needs the polarization of radiation field to be parallel to medium substrate.More existing antennas load the radiation that paster improves thin substrate plane horn antenna before plane horn antenna, but the patch size loading is larger, and working band is narrower.Conventionally in order to realize difference beam, need to adopt special feeder equipment, these feeder equipments or difficult realization in planar circuit, or the phase-shift circuit of arrowband.The gain of traditional substrate integration wave-guide plane horn antenna is relatively low in addition, its reason is because horn mouth constantly opens, while causing Electromagnetic Wave Propagation to horn mouth diametric plane, occur that phase place is asynchronous, the amplitude distribution of bore electric field strength is also inhomogeneous, radiation directivity and gain reduce, make the zero deeply more shallow and slope is lower of the difference beam antenna that forms, affect the direction finding precision of radar.The methods such as existing employing medium loading at present, medium prism, correct loudspeaker aperture field, but these methods all can only be improved the consistency of PHASE DISTRIBUTION, can not improve the uniformity of amplitude distribution, and these phase alignment structures have increased the overall structure size of antenna.
Summary of the invention
technical problem:the object of the invention is to propose a kind of thin substrate phase amplitude and proofread and correct line of rabbet joint difference beam plane horn antenna, the polarised direction of this radiation field of aerial is parallel with medium substrate, can use very thin medium substrate manufacture, in the situation that the electric very thin thickness of substrate, still there is good radiance, and this plane horn antenna can RECTIFYING ANTENNA bore face on electromagnetic phase place and amplitude inconsistent, increase the zero dark and improve the slope of antenna difference beam of antenna difference beam.
technical scheme:thin substrate phase amplitude of the present invention is proofreaied and correct line of rabbet joint difference beam plane horn antenna, it is characterized in that this antenna comprises the integrated horn antenna of microstrip feed line, substrate and a plurality of line of rabbet joint loudspeaker that are arranged on medium substrate; The first port of described microstrip feed line is the input/output port of this antenna, and the second port of microstrip feed line and the integrated horn antenna of substrate join; The integrated horn antenna of substrate by be positioned at medium substrate one side the first metal flat, be positioned at the second metal flat of medium substrate another side and form with the two row's metallization via hole loudspeaker sidewalls that are connected the first metal flat and the second metal flat through medium substrate, width between two row's metallization via hole loudspeaker sidewalls of the integrated horn antenna of substrate becomes large gradually, form tubaeform dehiscing, the end of dehiscing is the bore face of the integrated horn antenna of substrate; In the integrated horn antenna of substrate, there is odd number metallization arrays of vias to connect the first metal flat and the second metal flat, one end of metallization arrays of vias is inner at the integrated horn antenna of substrate, and the other end of metallization arrays of vias is on the bore face of the integrated horn antenna of substrate; In metallization arrays of vias, there is an intermediate metallization arrays of vias that the integrated horn antenna of substrate is divided into a symmetrical left side half antenna and right half antenna two parts; Adjacent two metallization arrays of vias or row's metallization via hole loudspeaker sidewall that metallization arrays of vias is adjacent, form dielectric-filled waveguide with the first metal flat and the second metal flat; On the bore face of the integrated horn antenna of substrate, the width of each dielectric-filled waveguide is equal, and on bore face, each dielectric-filled waveguide is connected to a line of rabbet joint loudspeaker.
The conduction band of microstrip feed line and the first metal flat join, and the ground plane of microstrip feed line and the second metal flat join.
The shape of described metallization arrays of vias is connected and forms with three sections of tail end broken lines by head end broken line, polygon, polygon in metallization arrays of vias can be triangle, quadrangle, pentagon or other polygon, and the shape on a polygonal limit or many limits can be straight line, camber line or other curve; Head end broken line in metallization arrays of vias or the shape of tail end broken line can be straight line, broken line or exponential line etc., and its length can be to approach zero or finite length.
The width of dielectric-filled waveguide will make electromagnetic wave can propagate therein and not be cut off.
In described metallization arrays of vias, adjust the distance between adjacent two row metallization arrays of vias or adjust the distance between a row metallization arrays of vias and substrate integration wave-guide horn antenna side-wall metallic via hole, can change the width of dielectric-filled waveguide, and then be adjusted at the phase velocity of Electromagnetic Wave Propagation in this dielectric-filled waveguide (15), make to arrive the power on PHASE DISTRIBUTION of magnetic wave of antenna opening diametric plane more even.
In described metallization arrays of vias, the length that changes row or multiple row metallization arrays of vias can change the length that respective media is filled waveguide, makes to arrive the power on PHASE DISTRIBUTION of magnetic wave of antenna opening diametric plane more even.
Select head end broken line or position and the size of polygon in the integrated horn antenna of substrate in metallization arrays of vias, the electromagnetic wave power transmitting in each dielectric-filled waveguide is equated.
Each line of rabbet joint loudspeaker has respectively the first radiation patch and the second radiation patch on the two sides that is positioned at medium substrate, the first radiation patch of line of rabbet joint loudspeaker is connected with the first metal flat of the integrated horn antenna of substrate, the second radiation patch of line of rabbet joint loudspeaker is connected with the second metal flat of the integrated horn antenna of substrate, and the hypotenuse of the hypotenuse of the first radiation patch and the second radiation patch opens gradually and forms flaring opening.
The hypotenuse of the first radiation patch of all line of rabbet joint loudspeaker that left half antenna connects points to all identical, and the hypotenuse of the second radiation patch of all line of rabbet joint loudspeaker that left half antenna connects points to all identical; The hypotenuse of the first radiation patch of all line of rabbet joint loudspeaker that right half antenna connects points to all identical, and the hypotenuse of the second radiation patch of all line of rabbet joint loudspeaker that right half antenna connects points to all identical; The hypotenuse of the second radiation patch of the line of rabbet joint loudspeaker that the hypotenuse sensing of the first radiation patch of the line of rabbet joint loudspeaker that left half antenna connects connects with right half antenna points to identical, and the hypotenuse that the hypotenuse of the second radiation patch of the line of rabbet joint loudspeaker that left half antenna connects points to the first radiation patch of the line of rabbet joint loudspeaker that connect with right half antenna points to identical.
In metallization via hole loudspeaker sidewall and metallization arrays of vias, the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole loudspeaker sidewall and the metallization arrays of vias that form can be equivalent to electric wall.
In dielectric-filled waveguide, the propagation phase velocity of the main mould of electromagnetic wave (TE10 mould) is relevant with the width of dielectric-filled waveguide, and the width of dielectric-filled waveguide is wider, and the phase velocity that main mould is propagated is lower; Otherwise the width of dielectric-filled waveguide is narrower, the phase velocity that main mould is propagated is higher.Electromagnetic wave is from one end input of microstrip feed line, and the other end of process microstrip feed line enters substrate integration wave-guide horn antenna, propagates after a segment distance, runs into metallization arrays of vias, just enters respectively each dielectric-filled waveguide transmission.Adjust the position of the metallization head end broken line of arrays of vias and the position of tail end broken line and length and polygon vertex, just can regulate and enter the relative power of each dielectric-filled waveguide and the relative phase velocity that electromagnetic wave transmits at each dielectric waveguide, and then adjust electromagnetic relative amplitude and relative phase on arrival antenna aperture face.
Enter the electromagnetic relative power of each dielectric-filled waveguide mainly by the head end broken line of metallization arrays of vias and the determining positions of polygon vertex, adjust the head end broken line of metallization arrays of vias and the position of polygon vertex, can adjust the electromagnetic relative power through each dielectric-filled waveguide transmission, and then can guarantee that the power transmitting equates in each dielectric-filled waveguide, because each dielectric-filled waveguide on bore face is connected to the line of rabbet joint loudspeaker of a same caliber size, the power that enters like this each line of rabbet joint loudspeaker radiation also equates, namely guarantee that whole antenna is that constant amplitude width is penetrated, this has just improved the gain of antenna.
In the power on PHASE DISTRIBUTION of magnetic wave of antenna opening diametric plane, mainly by length and the width of each dielectric-filled waveguide, determined, adjust the position of the metallization head end broken line of arrays of vias and the position of tail end broken line and length and polygon vertex, just can regulate electromagnetic wave in the relative phase velocity of each dielectric waveguide transmission, and then make by the bore face of the electromagnetic wave homophase arrival antenna of each dielectric-filled waveguide, on antenna opening diametric plane, the field intensity amplitude distribution of each dielectric-filled waveguide port is the same with phase place like this.
Electromagnetic wave from each dielectric waveguide enters line of rabbet joint loudspeaker radiation by antenna opening diametric plane, because the radiation patch of left half antenna slot line loudspeaker and the radiation patch of right half antenna slot line loudspeaker are symmetrical, therefore the polarised direction of left half antenna slot line loudspeaker radiation field is contrary with the polarised direction of right half antenna slot line loudspeaker radiation field, and so just the direction at parallel medium substrate has formed difference beam.
Just can be controlled in the above described manner antenna opening diametric plane power on amplitude and the PHASE DISTRIBUTION of magnetic wave, if remaining on the port width of each dielectric-filled waveguide on antenna opening diametric plane equates, and the position size and shape of adjustment metallization arrays of vias, make to arrive antenna opening diametric plane by the electromagnetic same width homophase of each dielectric-filled waveguide transmission, and then with each line of rabbet joint loudspeaker radiation that enters of width homophase, the polarised direction of radiation field also becomes with substrate and connects subparallel horizontal direction, so not only can be so that the in the situation that of the thin substrate of electricity, whole antenna has good radiance, and reach and improve the aperture efficiency of antenna and the object of gain.
Owing to there being a plurality of metallization arrays of vias that the bore face of antenna is divided into a lot of little bore faces, it is very little that the size of the line of rabbet joint loudspeaker that connect on each osculum diametric plane can be done, and the compact conformation of antenna, size also only increase seldom like this.
Antenna, from feed microstrip line to line of rabbet joint loudspeaker, be all the substrate integrated wave guide structure of sealing, so feeder loss is less.
In like manner also can on the bore face of antenna, realize as required specific field intensity amplitude and PHASE DISTRIBUTION.
beneficial effect:the beneficial effect that the thin substrate phase amplitude of the present invention is proofreaied and correct line of rabbet joint difference beam plane horn antenna is that the polarised direction of this radiation field of aerial is parallel with medium substrate; This antenna can use the medium substrate manufacture lower than the thickness of 2 percent wavelength, substrate thickness far below desired 1/10th wavelength of common plane horn antenna, in the situation that the electric very thin thickness of substrate, still there is good radiance, for example, in 6GHz frequency, adopt the thickness of epoxide resin material substrate to be reduced to 0.5mm by 2.5mm, thereby greatly reduce size, weight and cost; And this plane horn antenna inside be embedded with metallization arrays of vias can RECTIFYING ANTENNA bore face on electromagnetic phase place and amplitude inconsistent, increase the zero dark and improve the slope of antenna difference beam of antenna difference beam, compact conformation, the feeder loss of antenna are little.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further described.
Fig. 1 is the structural representation that the thin substrate phase amplitude of the present invention is proofreaied and correct line of rabbet joint difference beam plane horn antenna.
In figure, have: medium substrate 1, microstrip feed line 2, the integrated horn antenna 3 of substrate, line of rabbet joint loudspeaker 4, the first port 5 of microstrip feed line 2, the second port 6 of microstrip feed line 2, the first metal flat 7 of medium substrate 1, the second metal flat 8 of medium substrate 1, metallization via hole loudspeaker sidewall 9, the bore face 10 of the integrated horn antenna 3 of substrate, metallization arrays of vias 11, intermediate metallization arrays of vias 12, left half antenna 13, right half antenna 14, dielectric-filled waveguide 15, the conduction band 16 of microstrip feed line 2, the ground plane 17 of microstrip feed line 2, head end broken line 18, polygon 19, tail end broken line 20, the first radiation patch 21 of line of rabbet joint loudspeaker 4, the second radiation patch 22 of line of rabbet joint loudspeaker 4, the hypotenuse 23 of the first radiation patch 21 and the hypotenuse 24 of the second radiation patch 22.
Embodiment
Embodiment of the present invention is: thin substrate phase amplitude is proofreaied and correct line of rabbet joint difference beam plane horn antenna and comprised the integrated horn antenna 3 of the microstrip feed line 2, the substrate that are arranged on medium substrate 1 and a plurality of line of rabbet joint loudspeaker 4; The first port 5 of described microstrip feed line 2 is input/output ports of this antenna, and the second port 6 of microstrip feed line 2 joins with the integrated horn antenna 3 of substrate; The integrated horn antenna 3 of substrate by be positioned at medium substrate 1 one side the first metal flat 7, be positioned at the second metal flat 8 of medium substrate 1 another side and two rows that are connected the first metal flat 7 and the second metal flat 8 through the medium substrate 1 via hole loudspeaker sidewalls 9 that metallize and form, width between two row's metallization via hole loudspeaker sidewalls 9 of the integrated horn antenna 3 of substrate becomes large gradually, form tubaeform dehiscing, the end of dehiscing is the bore face 10 of the integrated horn antenna 3 of substrate; In the integrated horn antenna 3 of substrate, there is odd number metallization arrays of vias 11 to connect the first metal flat 7 and the second metal flat 8, one end of metallization arrays of vias 11 is in the integrated horn antenna of substrate 3 inside, and the other end of metallization arrays of vias 11 is on the bore face 10 of the integrated horn antenna 3 of substrate; In metallization arrays of vias 11, there is an intermediate metallization arrays of vias 12 that the integrated horn antenna 3 of substrate is divided into a symmetrical left side half antenna 13 and right half antenna 14 two parts; Adjacent two metallization arrays of vias 11 or row's metallization via hole loudspeaker sidewall 9 that metallization arrays of vias 11 is adjacent, form dielectric-filled waveguide 15 with the first metal flat 7 and the second metal flat 8; On the bore face 10 of the integrated horn antenna 3 of substrate, the width of each dielectric-filled waveguide 15 is equal, and on bore face 10, each dielectric-filled waveguide 15 is connected to a line of rabbet joint loudspeaker 4.
The conduction band 16 of microstrip feed line 2 and the first metal flat 7 join, and the ground plane 17 of microstrip feed line 2 and the second metal flat 8 join.
The shape of described metallization arrays of vias 11 is connected and forms with 20 3 sections of tail end broken lines by head end broken line 18, polygon 19, polygon 19 in metallization arrays of vias 11 can be triangle, quadrangle, pentagon or other polygon, and a limit of polygon 19 or the shape on many limits can be straight line, camber line or other curve; Head end broken line 18 in metallization arrays of vias 11 or the shape of tail end broken line 20 can be straight line, broken line or exponential line etc., and its length can be to approach zero or finite length.
The width of dielectric-filled waveguide 15 will make electromagnetic wave can propagate therein and not be cut off.
In described metallization arrays of vias 11, adjust the distance between adjacent two row metallization arrays of vias 11 or adjust the distance between a row metallization arrays of vias 11 and substrate integration wave-guide horn antenna 3 side-wall metallic via holes 9, can change the width of dielectric-filled waveguide 15, and then be adjusted at the phase velocity of Electromagnetic Wave Propagation in this dielectric-filled waveguide 15, make to arrive on antenna opening diametric plane 10 electromagnetic PHASE DISTRIBUTION more even.
In described metallization arrays of vias 11, the length that changes row or multiple row metallization arrays of vias 11 can change the length that respective media is filled waveguide 15, makes to arrive on antenna opening diametric plane 10 electromagnetic PHASE DISTRIBUTION more even.
Select head end broken line 18 or position and the size of polygon 19 in the integrated horn antenna 3 of substrate in metallization arrays of vias 11, the electromagnetic wave power of transmission in each dielectric-filled waveguide 15 is equated.
Each line of rabbet joint loudspeaker 4 has respectively the first radiation patch 21 and the second radiation patch 22 on the two sides that is positioned at medium substrate 1, the first radiation patch 21 of line of rabbet joint loudspeaker 4 is connected with the first metal flat 7 of the integrated horn antenna 3 of substrate, the second radiation patch 22 of line of rabbet joint loudspeaker 4 is connected with the second metal flat 8 of the integrated horn antenna 3 of substrate, and the hypotenuse 23 of the first radiation patch 21 and the hypotenuse 24 of the second radiation patch 22 open gradually and form flaring opening.
The hypotenuse 23 of the first radiation patch 21 of all line of rabbet joint loudspeaker 4 that left half antenna 13 connects points to all identical, and the hypotenuse 24 of the second radiation patch 22 of all line of rabbet joint loudspeaker 4 that left half antenna 13 connects points to all identical; The hypotenuse 23 of the first radiation patch 21 of all line of rabbet joint loudspeaker 4 that right half antenna 14 connects points to all identical, and the hypotenuse 24 of the second radiation patch 22 of all line of rabbet joint loudspeaker 4 that right half antenna 14 connects points to all identical; The hypotenuse 24 of the second radiation patch 22 of the line of rabbet joint loudspeaker 4 that hypotenuse 23 sensings of the first radiation patch 21 of the line of rabbet joint loudspeaker 4 that left half antenna 13 connects connect with right half antenna 14 points to identical, and the hypotenuse 23 that the hypotenuse 24 of the second radiation patch 22 of the line of rabbet joint loudspeaker 4 that left half antenna 13 connects points to the first radiation patch 21 of the line of rabbet joint loudspeaker 4 that connect with right half antenna 14 points to identical.
In described metallization via hole loudspeaker sidewall 9 and metallization arrays of vias 11, the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole loudspeaker sidewall 9 and the metallization arrays of vias 11 that form can be equivalent to electric wall.
When design, in metallization arrays of vias 11, the relative position of head end broken line 18 in the integrated horn antenna 3 of substrate is to determine that electromagnetic wave enters the principal element of the relative power size in each dielectric-filled waveguide 15.Regulate electromagnetic wave will change the width of dielectric-filled waveguide 15 in the phase velocity of dielectric-filled waveguide 15, due to the middle part of polygon 19 in metallization arrays of vias 11, and because the inside of polygon 19 does not have electromagnetic wave to enter substantially, therefore only change size and the position on some limit of polygon 19, can only to a constructed dielectric-filled waveguide 15 of this metallization arrays of vias 11, exert an influence, and very little on the impact of another dielectric-filled waveguide 15 being built by this metallization arrays of vias 11.In order reducing, to regulate phase velocity on entering the impact of the relative power size in each dielectric-filled waveguide 15 like this, conventionally to adopt and change the shape of polygon 19 in metallization arrays of vias 11 and big or small method,
In technique, thin substrate phase amplitude is proofreaied and correct line of rabbet joint difference beam plane horn antenna both can adopt common printed circuit board (PCB) (PCB) technique, also can adopt the integrated circuit technologies such as LTCC (LTCC) technique or CMOS, Si substrate to realize.The via hole that wherein metallizes can be that hollow metal through hole can be also solid metal hole, can be also continuous metallization wall, and the shape of metal throuth hole can be circular, can be also square or other shapes.
Structurally, according to same principle, assurance dielectric-filled waveguide 15 can increase or reduce the quantity of metallization arrays of vias 11, and then change quantity and the size of line of rabbet joint loudspeaker 4, as long as can transmit half left and right that the size of dehiscing of main mould and line of rabbet joint loudspeaker 4 can reach operation wavelength.Due to the metallization via sidewall 9 the closer to antenna, the distance that electromagnetic wave arrives antenna opening diametric plane 10 is far away, therefore with respect to the dielectric-filled waveguide 15 away from from metallization via sidewall 9, the width relative narrower of the dielectric-filled waveguide 15 from metallization via sidewall 9 close to is to obtain higher electromagnetic transmission phase velocity.
According to the above, just can realize the present invention.
Claims (10)
1. thin substrate phase amplitude is proofreaied and correct line of rabbet joint difference beam plane horn antenna, it is characterized in that this antenna comprises microstrip feed line (2), the integrated horn antenna of substrate (3) and a plurality of line of rabbet joint loudspeaker (4) that are arranged on medium substrate (1); First port (5) of described microstrip feed line (2) is the input/output port of this antenna, and second port (6) of microstrip feed line (2) joins with the integrated horn antenna of substrate (3); The integrated horn antenna of substrate (3) by be positioned at medium substrate (1) one side the first metal flat (7), be positioned at second metal flat (8) of medium substrate (1) another side and two rows that are connected the first metal flat (7) and the second metal flat (8) through medium substrate (1) the via hole loudspeaker sidewalls (9) that metallize and form, width between two row's metallization via hole loudspeaker sidewalls (9) of the integrated horn antenna of substrate (3) becomes large gradually, form tubaeform dehiscing, the end of dehiscing is the bore face (10) of the integrated horn antenna of substrate (3); In the integrated horn antenna of substrate (3), there is odd number metallization arrays of vias (11) to connect the first metal flat (7) and the second metal flat (8), one end of metallization arrays of vias (11) is in the integrated horn antenna of substrate (3) inside, and the other end of metallization arrays of vias (11) is on the bore face (10) of the integrated horn antenna of substrate (3); In metallization arrays of vias (11), there is an intermediate metallization arrays of vias (12) that the integrated horn antenna of substrate (3) is divided into a symmetrical left side half antenna (13) and right half antenna (14) two parts; Adjacent two metallization arrays of vias (11) or row's metallization via hole loudspeaker sidewalls (9) that the arrays of vias (11) that metallizes is adjacent, form dielectric-filled waveguide (15) with the first metal flat (7) and the second metal flat (8); Bore face (10) at the integrated horn antenna of substrate (3) is upper, and the width of each dielectric-filled waveguide (15) equates, at upper each dielectric-filled waveguide (15) of bore face (10), is connected to a line of rabbet joint loudspeaker (4).
2. thin substrate phase amplitude according to claim 1 is proofreaied and correct line of rabbet joint difference beam plane horn antenna, the conduction band (16) that it is characterized in that microstrip feed line (2) joins with the first metal flat (7), and the ground plane (17) of microstrip feed line (2) joins with the second metal flat (8).
3. thin substrate phase amplitude according to claim 1 is proofreaied and correct line of rabbet joint difference beam plane horn antenna, it is characterized in that the shape of described metallization arrays of vias (11) is by head end broken line (18), (20) three sections of formations that are connected of polygon (19) and tail end broken line, polygon (19) in metallization arrays of vias (11) can be triangle, quadrangle, pentagon or other polygon, and a limit of polygon (19) or the shape on many limits can be straight line, camber line or other curve; Head end broken line (18) in metallization arrays of vias (11) or the shape of tail end broken line (20) can be straight line, broken line or exponential line etc., and its length can be to approach zero or finite length.
4. according to the thin substrate phase amplitude described in claim 1 or 3, proofread and correct line of rabbet joint difference beam plane horn antenna, it is characterized in that the width of dielectric-filled waveguide (15) will make electromagnetic wave can propagate therein and not be cut off.
5. according to the thin substrate phase amplitude described in claim 1 or 3 or 4, proofread and correct line of rabbet joint difference beam plane horn antenna, it is characterized in that in described metallization arrays of vias (11), adjust the distance between adjacent two row metallization arrays of vias (11), or adjust the distance between a row metallization arrays of vias (11) and substrate integration wave-guide horn antenna (3) side-wall metallic via hole (9), can change the width of dielectric-filled waveguide (15), and then be adjusted at the phase velocity of Electromagnetic Wave Propagation in this dielectric-filled waveguide (15), make to arrive the upper electromagnetic PHASE DISTRIBUTION of antenna opening diametric plane (10) more even.
6. according to the thin substrate phase amplitude described in claim 1 or 3 or 4, proofread and correct line of rabbet joint difference beam plane horn antenna, it is characterized in that in described metallization arrays of vias (11), the length that changes row or multiple row metallization arrays of vias (11) can change the length that respective media is filled waveguide (15), makes to arrive the upper electromagnetic PHASE DISTRIBUTION of antenna opening diametric plane (10) more even.
7. according to the thin substrate phase amplitude described in claim 1 or 3 or 4, proofread and correct line of rabbet joint difference beam plane horn antenna, it is characterized in that selecting head end broken line (18) or position and the size of polygon (19) in the integrated horn antenna of substrate (3) in metallization arrays of vias (11), the electromagnetic wave power of transmission in each dielectric-filled waveguide (15) is equated.
8. thin substrate phase amplitude according to claim 1 is proofreaied and correct line of rabbet joint difference beam plane horn antenna, it is characterized in that each line of rabbet joint loudspeaker (4) has respectively the first radiation patch (21) and the second radiation patch (22) on the two sides that is positioned at medium substrate (1), first radiation patch (21) of line of rabbet joint loudspeaker (4) is connected with first metal flat (7) of the integrated horn antenna of substrate (3), second radiation patch (22) of line of rabbet joint loudspeaker (4) is connected with second metal flat (8) of the integrated horn antenna of substrate (3), the hypotenuse (23) of the first radiation patch (21) and the hypotenuse (24) of the second radiation patch (22) open gradually and form flaring opening.
9. according to the thin substrate phase amplitude described in claim 1 or 8, proofread and correct line of rabbet joint difference beam plane horn antenna, the hypotenuse (23) that it is characterized in that first radiation patch (21) of all line of rabbet joint loudspeaker (4) that left half antenna (13) connects points to all identical, and the hypotenuse (24) of second radiation patch (22) of all line of rabbet joint loudspeaker (4) that left half antenna (13) connects points to all identical; The hypotenuse (23) of first radiation patch (21) of all line of rabbet joint loudspeaker (4) that right half antenna (14) connects points to all identical, and the hypotenuse (24) of second radiation patch (22) of all line of rabbet joint loudspeaker (4) that right half antenna (14) connects points to all identical; The hypotenuse (24) of second radiation patch (22) of the line of rabbet joint loudspeaker (4) that hypotenuse (23) sensing of first radiation patch (21) of the line of rabbet joint loudspeaker (4) that left half antenna (13) connects connects with right half antenna (14) points to identical, and the hypotenuse (23) that the hypotenuse (24) of second radiation patch (22) of the line of rabbet joint loudspeaker (4) that left half antenna (13) connects points to first radiation patch (21) of the line of rabbet joint loudspeaker (4) that connect with right half antenna (14) points to identical.
10. thin substrate phase amplitude according to claim 1 is proofreaied and correct line of rabbet joint difference beam plane horn antenna, it is characterized in that in described metallization via hole loudspeaker sidewalls (9) and metallization arrays of vias (11), the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole loudspeaker sidewalls (9) and the metallization arrays of vias (11) that form can be equivalent to electric wall.
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| CN201310618314.3A CN103606747B (en) | 2013-11-29 | 2013-11-29 | Thin substrate phase amplitude corrects slot-line difference-beam planar horn antenna |
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| CN201310618314.3A CN103606747B (en) | 2013-11-29 | 2013-11-29 | Thin substrate phase amplitude corrects slot-line difference-beam planar horn antenna |
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| CN103606747B CN103606747B (en) | 2015-11-18 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018078466A1 (en) | 2016-10-28 | 2018-05-03 | Huawei Technologies Canada Co., Ltd. | Single-layered end-fire circularly polarized substrate integrated waveguide horn antenna |
| CN113506985A (en) * | 2021-06-29 | 2021-10-15 | 华南理工大学 | Millimeter wave substrate integrated waveguide horn one-dimensional three-dimensional layout scanning phased array |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324627A (en) * | 2011-09-06 | 2012-01-18 | 电子科技大学 | Miniaturization substrate integrated multi-beam antenna |
| CN103022715A (en) * | 2012-12-21 | 2013-04-03 | 东南大学 | Planar horn antenna for phase calibration |
| CN103022666A (en) * | 2012-12-21 | 2013-04-03 | 东南大学 | Planar horn antenna for phase amplitude impedance calibration |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324627A (en) * | 2011-09-06 | 2012-01-18 | 电子科技大学 | Miniaturization substrate integrated multi-beam antenna |
| CN103022715A (en) * | 2012-12-21 | 2013-04-03 | 东南大学 | Planar horn antenna for phase calibration |
| CN103022666A (en) * | 2012-12-21 | 2013-04-03 | 东南大学 | Planar horn antenna for phase amplitude impedance calibration |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018078466A1 (en) | 2016-10-28 | 2018-05-03 | Huawei Technologies Canada Co., Ltd. | Single-layered end-fire circularly polarized substrate integrated waveguide horn antenna |
| CN109643852A (en) * | 2016-10-28 | 2019-04-16 | 华为技术加拿大有限公司 | Single layer end-fire circular polarisation substrate integration wave-guide electromagnetic horn |
| CN113506985A (en) * | 2021-06-29 | 2021-10-15 | 华南理工大学 | Millimeter wave substrate integrated waveguide horn one-dimensional three-dimensional layout scanning phased array |
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| CN103606747B (en) | 2015-11-18 |
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