CN103606448B - A kind of electronic component and manufacture method thereof - Google Patents

A kind of electronic component and manufacture method thereof Download PDF

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Publication number
CN103606448B
CN103606448B CN201310628077.9A CN201310628077A CN103606448B CN 103606448 B CN103606448 B CN 103606448B CN 201310628077 A CN201310628077 A CN 201310628077A CN 103606448 B CN103606448 B CN 103606448B
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film substrate
base material
material paste
conductive electrode
slurry
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CN103606448A (en
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郑卫卫
吴震
戴春雷
孙峰
刘先忺
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Shenzhen Sunlord Electronics Co Ltd
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Shenzhen Sunlord Electronics Co Ltd
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Abstract

A kind of manufacturing method of electronic elements, comprises the following steps: a. prepares film substrate;B. preparing base material paste, described base material paste is the material matched with described film substrate;C. in described film substrate, make conductive electrode;D. base material paste described in spin coating in the described film substrate be shaped with described conductive electrode, is coated on smooth for the base material paste with mobility in film substrate;E. by multiple film substrate lamination aftershapings processed through step a~d.A kind of electronic component manufactured by the method is also disclosed at this.There is underbead crack in the base substrate after the present invention can avoid lamination, improves the reliability of electronic component and promote its electrical property.

Description

A kind of electronic component and manufacture method thereof
Technical field
The present invention relates to a kind of electronic component and manufacture method thereof.
Background technology
Laminate in moulding process traditional, directly make by laminating molding with the substrate of conductive electrode Upper subtegulum is bonded together, and forms green compact.This kind of molding mode is being under pressure by substrate During shrink, the conductive electrode making strength ratio substrate big is embedded among green compact.Along with electronic component Promoting the use of of compact in size and greatly current power type element, laminate substrate thickness the most significantly drops Low, relative to thickness of electrode, substrate thickness allowance for shrinkage is limited, is easy to during lamination Existing base substrate internal cleavage, makes reliability of electronic components to reduce, and it is excessive because bearing pressure to there is electrode And produce deformation, cause electrical property to reduce.
Summary of the invention
The technical problem to be solved is the drawbacks described above making up prior art, it is provided that Yi Zhong electricity Sub-element and preparation method thereof, improves the reliability of electronic component and promotes its electrical property.
For achieving the above object, the present invention is by the following technical solutions:
A kind of manufacturing method of electronic elements, comprises the following steps:
A. film substrate is prepared;
B. preparing base material paste, described base material paste is the material matched with described film substrate;
C. in described film substrate, make conductive electrode;
D. base material paste described in spin coating in the described film substrate be shaped with described conductive electrode, will have The base material paste of mobility is smooth to be coated in film substrate;
E. by multiple film substrate lamination aftershapings processed through step a~d.
In above-mentioned steps, step b is not intended to temporal priority for step a and step c.
Preferably:
Step d includes: described base material paste is filled in the position of described film substrate surface indentation, Then make film substrate rotate around the axle being perpendicular to described film substrate surface, make institute by centrifugal force State base material paste and be distributed in the described film substrate surface being shaped with described conductive electrode, form described base material The flat surface that slurry is concordant with the top of described conductive electrode.
Step d includes continuous print two-stage spin coating process, wherein film substrate in first order spin coating process The speed of rotation is 1000r/min, and preferred spin-coating time is 18s~25s, thin in the spin coating process of the second level The speed of rotation of film substrate is 2000~2200r/min, and preferred spin-coating time is 20s.
The material of described base material paste matches with described film substrate, at least refers to that both materials become After film, its sintering shrinkage is identical.
Step a includes:
A1. by Al that percentage by weight is 35%~45%2O3With the boron that percentage by weight is 55%~65% Silica glass be mixed with powder mixture;
A2. described powder mixture is mixed with esters solution stirring, and add organic bond and Dispersant stirs, and forms ceramic size;
A3. described ceramic size it is coated with to form described film substrate.
Described base material paste is made by following steps:
B1. by Al that percentage by weight is 35%~45% powder2O3With percentage by weight it is The Pyrex of 55%~65% be mixed with powder mixture;
B2. the stirring of described powder mixture and deionized water mix, and add aqueous binder with Dispersant stirs, and forms slurry, by the pH of alkaline matter regulation slurry 6.5~7.5.
Described film substrate is in alumina substrate, ferrite substrate, glass membrane, PET film sheet A kind of.
Described alumina substrate is the Al of powder2O3Make with the mixture of the Pyrex of powder Alumina substrate.
Step c includes:
C1. preparation conductive electrode slurry, described conductive electrode slurry is that dielectric constant exists The silver slurry of 0.016~0.025mm*ohm or copper slurry;
C2. by printing or photoetching process, electrocondution slurry is coated in film substrate, forms described conduction electricity Pole.
A kind of electronic component, described electronic component uses any one fabrication of electronic components method aforesaid Make.
The Advantageous Effects of the present invention:
The present invention is by filling out the surface spin coating making the film substrate of conductive electrode before laminated forming Fill one layer of base material paste, reduce during lamination and exist bigger because of conductive electrode portion accumulation Internal stress, prevents the base substrate after lamination from there is underbead crack and causing blank cracking in sintering process. Present invention is particularly suitable in the conductive electrode thickness small size merit more than more than 0.8 times of film substrate Rate type electronic component.Use the present invention, interiors of products stress in sintering process can not only be reduced, also may be used Improve interlaminar adhesion during lamination, keep conductive electrode shape, improving product electrical property.
Accompanying drawing explanation
Fig. 1 is the technical process schematic diagram of a kind of embodiment of fabrication of electronic components method of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing, embodiments of the invention are elaborated.State under it is emphasized that Bright that be merely exemplary rather than in order to limit the scope of the present invention and application thereof.
Refering to Fig. 1, in a kind of embodiment, manufacturing method of electronic elements comprises the following steps:
Step a. prepares film substrate 101;
Step b. prepares base material paste 103, and described base material paste matches with described film substrate Material;
Step c. makes conductive electrode 102 in described film substrate;
Step d. is base material slurry described in spin coating in the described film substrate 101 be shaped with described conductive electrode Material 103, is coated on smooth for the base material paste 103 with mobility in film substrate 101;
Step e. is by multiple film substrate lamination 100 aftershapings processed through step a~d.
Described molding forms green compact after may include that lamination, and green compact are sequentially completed cutting, row Glue, sintering, chamfering, manufacturing terminal electrode and plating etc. process, and complete fabrication of electronic components.
Step b in the present invention is not limiting as temporal priority for step a and step c.
The material of base material paste 103 matches with film substrate 101, after referring to both material filmings, Its sintering shrinkage is identical.
Described film substrate can be alumina substrate, ferrite substrate, glass membrane, PET film sheet In one.In a preferred embodiment, described alumina substrate is the Al of powder2O3And powder The alumina substrate that the mixture of the Pyrex of shape makes.It is further preferred that described alumina substrate Be percentage by weight be 35%~45%, the Al of more preferably 40%2O3With percentage by weight it is The mixture of the Pyrex of 55%~65%, more preferably 60%.The Al of described powder2O3Preferred Particle diameter is, D50 is 1.5 μm, and D95 is 3 μm.The preferred grain of the Pyrex of described powder Footpath is, D50 is 1.5 μm, and D95 is 3 μm.
Film substrate can be prepared by following steps:
Step a1. is by Al that percentage by weight is 35%~45%2O3With percentage by weight it is The Pyrex of 55%~65% be mixed with powder mixture;
Described powder mixture is mixed by step a2. with esters solution stirring, and adds organic Agent and dispersant, use ball mill stirring, continues 9h~11h and forms ceramic size, and wherein esters is molten Liquid can be the esters solution using isobutanol;
Step a3. is coated with described ceramic size to form described film substrate.
Base material paste can be made by following steps:
Step b1. is by Al that percentage by weight is 35%~45% powder2O3With percentage by weight it is The Pyrex of 55%~65% be mixed with powder mixture;
Described powder mixture is mixed by step b2. with deionized water stirring, and adds aqueous binder Agent and dispersant, use ball mill stirring, continues 12h~18h and forms slurry, is adjusted by alkaline matter The pH of joint slurry is 6.5~7.5.
Conductive electrode can be made by following steps:
Step c1. preparation conductive electrode slurry, described conductive electrode slurry is that dielectric constant exists The silver slurry of 0.016~0.025mm*ohm or copper slurry;
Electrocondution slurry is coated in film substrate by step c2. by printing or photoetching process, leads described in formation Electricity electrode.
In a preferred embodiment, the step of spin coating base material paste includes:
Described base material paste is filled in the position of described film substrate surface indentation, then makes thin film base Sheet rotates around the axle being perpendicular to described film substrate surface, makes described base material paste divide by centrifugal force Cloth, on the described film substrate surface being shaped with described conductive electrode, forms described base material paste and leads with described The concordant flat surface in top of electricity electrode.It is highly preferred that step d includes that continuous print two-stage is spun Journey, the wherein 1000r/min of film substrate in first order spin coating process, more preferably spin-coating time is 18s~25s, in the spin coating process of the second level, the speed of rotation of film substrate is 2000~2200r/min, relatively It is 20s for preferred spin-coating time.
The present invention also provides for a kind of electronic component, and it can use the electronic component of aforesaid any embodiment Manufacture method is made.
Example one
The chip inductor manufacture method of a kind of undersized metric system 0402 encapsulation, comprises the following steps: right The electrode produced carries out lamination, forms ceramic green, more described ceramic green is sequentially completed cutting, Binder removal, sintering, chamfering, manufacturing terminal electrode and plating, complete fabrication of electronic components.
1) aluminum oxide film film substrate is made;
1 1) mix powder shape material is prepared
By the Al that percentage by weight is 40% powder2O3With the Pyrex that percentage by weight is 60% It is mixed with mix powder shape material, the Al of powder2O3Preferable particle size be that D50 is 1.5 μm, D95 is 3 μm, and the preferable particle size of Pyrex is, D50 is 1.5 μm, and D95 is 3 μm;
1 2) dusty material of preparation is mixed with the esters solution stirring of isobutanol, and add organic Binding agent and dispersant, use ball mill stirring, continues 9h~11h and forms ceramic size;
1 3) making aluminum oxide film film substrate by coating process, substrate thickness is 10 μm;
2) base material paste is made
2 1) mix powder shape material is prepared
By the Al that percentage by weight is 35%~45% powder2O3It is 65%~55% with percentage by weight Pyrex be mixed with mix powder shape material;
2 2) dusty material and the deionized water stirring of preparation is mixed, and add aqueous binder with Dispersant, uses ball mill stirring, continues 12h~18h and forms slurry, by alkaline matters such as ammonia The pH of regulation slurry is 6.5~7.5.
3) conductive electrode is made
3.1) it is equipped with conductive electrode slurry: the silver slurry of the ML-SP19 that Shoei Chemical company produces, Dielectric constant is at 0.022mm*ohm
3.2) use screen printing apparatus that conductive electrode slurry is coated on film substrate surface, conduction electricity The thickness of pole is 10 μm~12 μm, and the live width of conductive electrode is 30~35 μm.
4) spin coating base material paste
On the substrate completing electrode fabrication, by equipment, the base material paste of spin coating is coated to thin film base On sheet, spin coating speed is 1000r/min, and spin-coating time is 18s;After completing coating, film substrate needs Continuing at the uniform velocity to rotate, spin coating speed is 2000r/min, and the time is 20s, makes the base material of substrate surface starch Material is the most sufficiently filled into the recessed position of substrate surface, makes film substrate surface Form a burnishing surface.
Comparison with existing technique
Using the chip inductor of metric system 0402 encapsulation of present example one preparation, length and width face stays limit to measure L is all by 30 μm designs, and the internal SEM scanning tomography that passes through of the base substrate after laminated forming, without cracking, burns Porcelain body after knot is without cracking, and electrode is without the phenomenon flattened, the E4991 released by Ansoft company of the U.S. Network Analyzer, recording sample inductance value is 1.5nH.
Using existing processing technology, after completing conductive electrode making, direct laminated forming, after sintering The product of 60% exist magnet cracking phenomenon, and internal electrode sintering after live width be 30 μm, there is pressure Flat phenomenon, the inductance value recording sample is 1.3nH.
The electronic component that present example one makes electrically promotes and electrically promotes 10%, outward appearance Yield lmproved 40%, show that the inventive method is with the obvious advantage at small size design aspect.
Example two
A kind of big electric current magnetic bead (power-type element) manufacture method of metric system 1005 encapsulation, including with Lower step: the electrode produced carries out lamination, forms green compact, then is sequentially completed described green compact and cuts Cut, binder removal, sintering, chamfering, manufacturing terminal electrode and plating, complete fabrication of electronic components.
1) ferrite film substrate is made;
1 1) it is equipped with mix powder shape material
Fe, Cu, Ni, Zn mass percent will be mixed with and be respectively 66%, 4.4%, 10.2%, 19.4% Mix powder ball milling, preferable particle size is, D50 is 0.5 μm, and D95 is 1.5 μm;
1 2) dusty material of preparation is mixed with the esters solution stirring of isobutanol, and add organic Binding agent and dispersant, use ball mill stirring, continues 9h~11h and forms slurry;
1 3) making ferrite film substrate by coating process, substrate thickness is 15 μm;
2) base material paste is made
2 1) mix powder shape material is prepared
Fe, Cu, Ni, Zn mass percent will be mixed with and be respectively 66%, 4.4%, 10.2%, 19.4% Mix powder ball milling, preferable particle size is, D50 is 0.5 μm, and D95 is 1.5 μm;
2 2) dusty material and the deionized water stirring of preparation is mixed, and add aqueous binder with Dispersant, uses ball mill stirring, continues 12h~18h and forms slurry, by alkaline matters such as ammonia The pH of regulation slurry is 6.5~7.5.
3) conductive electrode is made
3.1) it is equipped with conductive electrode slurry: the silver slurry of the ML-SP19 that Shoei Chemical company produces, Dielectric constant is at 0.022mm*ohm
3.2) use screen printing apparatus that conductive electrode slurry is coated on film substrate surface, conduction electricity The thickness of pole is 15 μm~18 μm, and the live width of conductive electrode is 100~110 μm.
4) spin coating base material paste
On the substrate completing electrode fabrication, by equipment, the base material paste of spin coating is coated to thin film base On sheet, spin coating speed is 1000r/min, and spin-coating time is 25s;After completing coating, film substrate needs Continuing at the uniform velocity to rotate, spin coating speed is 2200r/min, and spin-coating time is 20s, makes the base of substrate surface Material slurry is the most sufficiently filled into the recessed position of substrate surface, makes film substrate Surface forms a burnishing surface.
Comparison with existing technique
Present example two is used to prepare the big electric current magnetic bead of metric system 1005 encapsulation, the base after laminated forming Internal portion is by SEM scanning tomography without cracking, and the porcelain body after sintering is without cracking, and electrode is without flattening Phenomenon, the E4991 Network Analyzer released by Ansoft company of the U.S., record sample 100MHz Under impedance be 160ohm.
Using existing processing technology, after completing conductive electrode making, direct laminated forming, after sintering The product of 86% exist magnet cracking phenomenon, and internal electrode sintering after live width be 98.5 μm, exist The phenomenon flattened, recording the impedance under sample 100MHz is 110ohm.
The electronic component that present example two makes electrically promotes 45%, outward appearance Yield lmproved 86%, table The bright present invention is with the obvious advantage in terms of power-type product design.
Above content is that to combine concrete preferred implementation made for the present invention the most specifically Bright, it is impossible to assert the present invention be embodied as be confined to these explanations.Such as, although being preferable to carry out In example, base material paste is concordant with the top of conductive electrode, but to expose be not necessary at the top of conductive electrode 's.For general technical staff of the technical field of the invention, without departing from present inventive concept On the premise of, it is also possible to make some simple deduction or replace, all should be considered as belonging to the guarantor of the present invention Protect scope.

Claims (4)

1. a manufacturing method of electronic elements, it is characterised in that comprise the following steps:
A. film substrate is prepared;
Step a includes:
A1. by Al that percentage by weight is 35%~45%2O3It is 55%~65% with percentage by weight Pyrex be mixed with powder mixture;
A2. described powder mixture is mixed with esters solution stirring, and add organic bond and Dispersant stirs, and forms ceramic size;
A3. described ceramic size it is coated with to form described film substrate;
B. preparing base material paste, described base material paste is the material matched with described film substrate, institute State and match, after at least referring to described base material paste film forming, with described film substrate sintering shrinkage phase With;
Step b includes:
B1. by Al that percentage by weight is 35%~45% powder2O3With percentage by weight it is The Pyrex of 55%~65% be mixed with powder mixture;
B2. the stirring of described powder mixture and deionized water mix, and add aqueous binder with Dispersant stirs, and forms slurry, by the pH of alkaline matter regulation slurry 6.5~7.5;
C. making conductive electrode in described film substrate, conductive electrode thickness is more than film substrate More than 0.8 times;
D. base material paste described in spin coating in the described film substrate be shaped with described conductive electrode, will have The base material paste of mobility is smooth to be coated in film substrate;
E. by multiple film substrate lamination aftershapings processed through step a~d;
Step d includes continuous print two-stage spin coating process, wherein film substrate in first order spin coating process The speed of rotation is 1000r/min, and spin-coating time is 18s~25s, film substrate in the spin coating process of the second level The speed of rotation be 2000~2200r/min, spin-coating time is 20s.
2. manufacturing method of electronic elements as claimed in claim 1, it is characterised in that step d includes: Described base material paste is filled in the position of described film substrate surface indentation, then makes film substrate enclose Rotate around the axle being perpendicular to described film substrate surface, make described base material paste be distributed in by centrifugal force It is shaped with the described film substrate surface of described conductive electrode, forms described base material paste and described conduction electricity The flat surface that the top of pole is concordant.
3. the manufacturing method of electronic elements as described in any one of claim 1 to 2, it is characterised in that: Step c includes:
C1. preparation conductive electrode slurry, described conductive electrode slurry is that dielectric constant exists The silver slurry of 0.016~0.025mm*ohm or copper slurry;
C2. by printing or photoetching process, electrocondution slurry is coated in film substrate, forms described conduction electricity Pole.
4. an electronic component, it is characterised in that described electronic component uses claim 1 to 3 times One described manufacturing method of electronic elements is made.
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103887053B (en) * 2014-04-10 2016-04-27 深圳市宏业翔科技有限公司 A kind of manufacture method of laminated chip inductor
US9954510B2 (en) 2014-11-28 2018-04-24 Samsung Electro-Mechanics Co., Ltd. Common mode filter
CN104494239B (en) * 2014-12-23 2017-02-22 深圳顺络电子股份有限公司 Manufacturing method of electronic element
CN105428035B (en) * 2015-12-23 2017-08-25 深圳顺络电子股份有限公司 A kind of electronic component and its manufacture method
CN106920599A (en) * 2017-03-22 2017-07-04 合肥仁德电子科技有限公司 A kind of preparation method of electronic component
CN108218404B (en) * 2017-12-20 2021-02-02 深圳顺络电子股份有限公司 Electronic component and manufacturing method thereof
CN110787970B (en) * 2019-11-14 2022-11-11 湖南工程学院 Ferrite raw material sheet forming equipment and forming method thereof
CN113658789B (en) * 2021-08-18 2024-03-29 广东风华邦科电子有限公司 Preparation method for improving current resistance of sheet type multi-layer thick silver magnetic beads

Family Cites Families (8)

* Cited by examiner, † Cited by third party
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KR100200902B1 (en) * 1990-09-19 1999-06-15 가나이 쓰도무 Method for producing multilayer ceramic body
JP3726035B2 (en) * 2001-05-25 2005-12-14 京セラ株式会社 Manufacturing method of ceramic laminate
US6716692B1 (en) * 2003-05-20 2004-04-06 Via Technologies, Inc. Fabrication process and structure of laminated capacitor
KR100649580B1 (en) * 2003-12-15 2006-11-28 삼성전기주식회사 Method for Manufacturing Multilayered Ceramic Capacitor by Spin Coating and Multilayered Ceramic Capacitor
CN101019196B (en) * 2004-10-13 2010-07-28 松下电器产业株式会社 Production method for laminated ceramic electronic components and production device therefor
CN101215172B (en) * 2008-01-09 2010-06-09 华中科技大学 Method for preparing bismuth sodium titanate base leadless piezoelectricity thick film
CN101786865A (en) * 2009-12-14 2010-07-28 深圳顺络电子股份有限公司 Low dielectric constant ceramic powder and cofiring method thereof with nickel zinc copper ferrite powder
CN103325675A (en) * 2013-05-30 2013-09-25 深圳顺络电子股份有限公司 Method for manufacturing electronic element of narrow-line-width electrode

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