CN103606379A - Novel current sense amplifier used in memorizer - Google Patents
Novel current sense amplifier used in memorizer Download PDFInfo
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- CN103606379A CN103606379A CN201310571971.7A CN201310571971A CN103606379A CN 103606379 A CN103606379 A CN 103606379A CN 201310571971 A CN201310571971 A CN 201310571971A CN 103606379 A CN103606379 A CN 103606379A
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- amplifier
- current
- sense amplifier
- current sense
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Abstract
The invention discloses a novel current sense amplifier used in a memorizer. The current sense amplifier comprises a precharge circuit, a bit line stray capacitor, a first-level amplifier and a second-level amplifier, wherein the precharge circuit is connected with the bit line stray capacitor; the first-level amplifier is connected with the bit line of the memorizer; the second-level amplifier is connected with the first-level amplifier. The novel current sense amplifier used in the memorizer is made by adopting a GSMC (global system for mobile communication) submicron technology, is rapid in response, and can normally operate under low power supply voltage and severe environment, so that the reading speed of the memorizer is greatly improved.
Description
Technical field
The present invention relates to a kind of electronic component, be specifically related to a kind of New type of current sense amplifier for storer, belong to electronic technology field.
Background technology
Semiconductor memory is the vitals in electronic equipment, computing machine and microcontroller, its performance by the system that directly has influence in the performance of the aspects such as speed.The speed of storer depends mainly on reading the time of storer.The time of reading of storer mainly refers to the time delay of experiencing from the output that is input to data-signal of address signal, therefore, reduce reading the time of storer, generally there are two kinds of approach: the one,, minimizing is input to the logical time delay of word line selection from address signal, and it is more limited reducing in this way time delay; Another kind is to reduce from word line selection to lead to the time delay that data output is experienced, and this can realize by improving the design of sense amplifier.The work object of sense amplifier is the data in reading cells by the variation of tiny signal on amplification memory bit line.
At present, current sensitive amplifier has generally replaced voltage-type sense amplifier, is widely used in semiconductor memory to improve the storage speed of storer.The work of current sensitive amplifier can be divided into two processes: the one, and pre-charge process, the stray capacitance of pairs of bit line is charged, and makes it to return to high level, for read-write is next time prepared; The 2nd, amplification process, pairs of bit line signal amplifies processing, the data of being stored with reading cells.In existing technology, current sensitive amplifier pre-charge current is less, can not more reduce precharge time, has affected reading speed; Work under compared with low supply voltage and rugged surroundings unreliable; Adopt single-stage amplifying circuit to amplify signal, need to guarantee gain and speed by increasing supply voltage.
Summary of the invention
For the demand, the invention provides a kind of New type of current sense amplifier for storer, this current sensitive amplifier adopts GSMC submicrometer processing to make, its fast response time, can under compared with low supply voltage and rugged surroundings, work, greatly improve the reading speed of storer.
The present invention is a kind of New type of current sense amplifier for storer, described current sensitive amplifier comprises pre-charge circuit, bit line stray capacitance, first order amplifier and second level amplifier, described pre-charge circuit connects bit line stray capacitance, bit line in described first order amplifier connected storage, described second level amplifier connects first order amplifier.
In a preferred embodiment of the present invention, described pre-charge circuit is comprised of transistor M4～M9, current source I1, and wherein, transistor M4, M5 and M6 are mirror-image structure, can produce pre-charge current.
In a preferred embodiment of the present invention, described transistor M7, M8, M9 and current source I1 produce the grid bias of transistor M4, can make pre-charge circuit keep in a long time pre-charge current in a higher value, thereby shorten precharge time.
In a preferred embodiment of the present invention, described first order amplifier is comprised of transistor M10～M13, current source I2 and current source I3, this first order amplifier is differential amplifier, and it adopts a folding image load, can effectively improve gain not increasing in supply voltage situation.
In a preferred embodiment of the present invention, described second level amplifier is chain of inverters, and it is formed by three phase inverter serial connections, can reduce stray capacitance, improves gain and speed.
The present invention has disclosed a kind of New type of current sense amplifier for storer, this current sensitive amplifier adopts GSMC submicrometer processing to make, its fast response time can work under compared with low supply voltage and rugged surroundings, has greatly improved the reading speed of storer.
Accompanying drawing explanation
Fig. 1 is that the embodiment of the present invention is for the circuit theory diagrams of the New type of current sense amplifier of storer.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in detail, thereby so that advantages and features of the invention can be easier to be it will be appreciated by those skilled in the art that, protection scope of the present invention is made to more explicit defining.
Fig. 1 is that the embodiment of the present invention is for the circuit theory diagrams of the New type of current sense amplifier of storer; This current sensitive amplifier comprises pre-charge circuit, bit line stray capacitance, first order amplifier and second level amplifier, described pre-charge circuit connects bit line stray capacitance, bit line in described first order amplifier connected storage, described second level amplifier connects first order amplifier.
The New type of current sense amplifier for storer that the present invention mentions adopts GSMC 0.18um technique to make, its pre-charge circuit adopting can be at precharge cycle with interior maintenance charging current in a higher value, can reduce precharge time like this; Adopt two-stage amplifying circuit pairs of bit line signal to amplify, to guarantee that gain, speed reach requirement simultaneously.As shown in Figure 1, the pre-charge circuit in this current sensitive amplifier is comprised of transistor M4, M5, M6, M7, M8, M9 and current source I1; Wherein, transistor M4, M5 and M6 are mirror-image structure, are used for producing pre-charge current; Transistor M7, M8, M9 and current source I1 are mainly used to produce the grid bias of transistor M4, guarantee that transistor M4, M5 and M6 can produce larger pre-charge current, and can make pre-charge current remain in a long time a higher value, thereby effectively shorten precharge time, improve the response speed of current sensitive amplifier.
As shown in Figure 1, the electric current when Ic in this current sensitive amplifier circuit is reading cells, C1 is bit line stray capacitance, Ir is reference current; The parallel-connection structure of Ic and C1 is analog memory cell effectively, and Ic determines by storage unit institute canned data, and when storage information is 1, Ic is large electric current; When storage information is 0, Ic is little electric current; The value of Ir is between the large and small electric current of Ic.In Fig. 1 circuit, first order amplifier is by transistor M10, M11, M12, M13, current source I2 and current source I3 form, this first order amplifier is differential amplifier, its input signal is respectively the bit-line voltage of REF node voltage and BL Nodes, this differential amplifier adopts a folding image load, can effectively improve gain not increasing in supply voltage situation.Second level amplifier is chain of inverters, and it is formed by three phase inverter serial connections, can reduce stray capacitance, improves gain and speed.This current sensitive amplifier is owing to having adopted two-stage amplifying circuit to amplify signal, therefore can significantly improve speed and gain in supply voltage situation not increasing.Through circuit simulation test, the New type of current sense amplifier in the present invention can not only read rapidly and accurately storage information 0 or 1 in room temperature situation, also can under compared with low supply voltage and rugged surroundings, read rapidly and accurately storage information 0 or 1.
The present invention has disclosed a kind of New type of current sense amplifier for storer, this current sensitive amplifier adopts GSMC submicrometer processing to make, its fast response time can work under compared with low supply voltage and rugged surroundings, has greatly improved the reading speed of storer.
The above; it is only the specific embodiment of the present invention; but protection scope of the present invention is not limited to this; any those of ordinary skill in the art are in the disclosed technical scope of the present invention; the variation that can expect without creative work or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain that claims were limited.
Claims (5)
1. the New type of current sense amplifier for storer, it is characterized in that, described current sensitive amplifier comprises pre-charge circuit, bit line stray capacitance, first order amplifier and second level amplifier, described pre-charge circuit connects bit line stray capacitance, bit line in described first order amplifier connected storage, described second level amplifier connects first order amplifier.
2. the New type of current sense amplifier for storer according to claim 1, it is characterized in that, described pre-charge circuit is comprised of transistor M4～M9, current source I1, wherein, transistor M4, M5 and M6 are mirror-image structure, can produce pre-charge current.
3. the New type of current sense amplifier for storer according to claim 2, it is characterized in that, described transistor M7, M8, M9 and current source I1 produce the grid bias of transistor M4, can make pre-charge circuit keep in a long time pre-charge current in a higher value, thereby shorten precharge time.
4. the New type of current sense amplifier for storer according to claim 1, it is characterized in that, described first order amplifier is comprised of transistor M10～M13, current source I2 and current source I3, this first order amplifier is differential amplifier, it adopts a folding image load, can effectively improve gain not increasing in supply voltage situation.
5. the New type of current sense amplifier for storer according to claim 1, is characterized in that, described second level amplifier is chain of inverters, and it is formed by three phase inverter serial connections, can reduce stray capacitance, improves gain and speed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310571971.7A CN103606379A (en) | 2013-11-13 | 2013-11-13 | Novel current sense amplifier used in memorizer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310571971.7A CN103606379A (en) | 2013-11-13 | 2013-11-13 | Novel current sense amplifier used in memorizer |
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| Publication Number | Publication Date |
|---|---|
| CN103606379A true CN103606379A (en) | 2014-02-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310571971.7A Pending CN103606379A (en) | 2013-11-13 | 2013-11-13 | Novel current sense amplifier used in memorizer |
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| CN (1) | CN103606379A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104821618A (en) * | 2015-04-17 | 2015-08-05 | 惠州Tcl移动通信有限公司 | Pre-charging system and method of mobile terminal, and mobile terminal |
| CN104112466B (en) * | 2014-07-21 | 2017-07-18 | 中国人民解放军国防科学技术大学 | A kind of sense amplifier applied to multiple programmable nonvolatile memory |
-
2013
- 2013-11-13 CN CN201310571971.7A patent/CN103606379A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104112466B (en) * | 2014-07-21 | 2017-07-18 | 中国人民解放军国防科学技术大学 | A kind of sense amplifier applied to multiple programmable nonvolatile memory |
| CN104821618A (en) * | 2015-04-17 | 2015-08-05 | 惠州Tcl移动通信有限公司 | Pre-charging system and method of mobile terminal, and mobile terminal |
| CN104821618B (en) * | 2015-04-17 | 2017-07-11 | 惠州Tcl移动通信有限公司 | A kind of mobile terminal pre-charge system, method and mobile terminal |
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Application publication date: 20140226 |