CN103604361A - Giant magnetoresistance displacement sensor manufactured with n layers of (NiFe/Cu/Co/Cu) nanowires as sensor chip - Google Patents
Giant magnetoresistance displacement sensor manufactured with n layers of (NiFe/Cu/Co/Cu) nanowires as sensor chip Download PDFInfo
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Abstract
The invention relates to a giant magnetoresistance displacement sensor manufactured with n layers of (NiFe/Cu/Co/Cu) nanowires as a sensor chip. The giant magnetoresistance displacement sensor comprises the sensor chip, Helmholtz coils, a direct current power supply, small magnets, a direct current digital voltmeter and a ruler. The sensor chip is made of the n layers of (NiFe/Cu/Co/Cu) nanowires which are formed by alternatively ranking NiFe layers, Cu layers, Co layers and Cu layers, and the diameter of the nanowires ranges from 80nm to 120nm. In the sensor chip, four identical n layers of (NiFe/Cu/Co/Cu) nanowire arrays are utilized to form a bridge type structure, the optimum position of the sensor chip is a midpoint of the axes of the two Helmholtz coils, and the axis direction of the nanowires is parallel to the direction of a magnetic line of force. The giant magnetoresistance displacement sensor is high in sensitivity, small in power consumption and low is cost, and can be applied to Young modulus measurement, metal thermal coefficient of expansion measurement, water surface liquid level detection, magnetic material locating and the like of materials.
Description
Technical field
The invention belongs to metal nano material and magneto-electronics field, the giant magnetoresistance displacement transducer that particularly prepared by a kind of utilization [NiFe/Cu/Co/Cu] n Multilayered Nanowires.The giant magnetoresistance displacement transducer of present technique invention is highly sensitive, power consumption is little, cost is low, can be applicable to the aspects such as Young modulus measurement, the measurement of metal heat-expansion coefficient, the detection of water surface liquid level, magnetic material location of material.
Background technology
Magneto-electronics is as the important composition of nanoelectronics, reads, the field such as the storage at random of non-volatile information, spin transistor and quantum computer will obtain widespread use, become the dominant technology of Future Information science and technology at magnetic recording, magnetic head.The discovery of magnetoresistance effect giant magnetoresistance effect indicates the beginning of magneto-electronics development.Through fast development decades, giant magnetoresistance device has wide application in fields such as magneto-electronics, computing machine, information science, especially giant magnetoresistance effect is in the application of the aspects such as Magnetic Sensor, as: displacement transducer, magnetic gear velocity sensor, current detecting, magnetic railings ruler and various weak magnetic measurement sensor.Giant magnetoresistance sensor has that volume is little, highly sensitive, the range of linearity is wide, temperature stability good, low cost and other advantages, especially can effectively detect existence and the variation of Weak magentic-field, giant magnetoresistance sensor brings brand-new change will to the fields such as commercial unit is controlled automatically, trade mark detection, Technology of Precision Measurement.
The core parts of giant magnetoresistance sensor are giant magnetic resistor materials, and along with going deep into of giant magnetoresistance multilayer film, the research of multilayer line, the sandwich construction with excellent magnetic energy and giant magnetoresistance performance will become the key that promotes giant magnetoresistance sensor development.At present, giant magnetoresistance sensor is at the early-stage abroad, and at home, along with deepening continuously and systematization of giant magnetic resistor material research, to the demand of its application, also will be more and more urgent.The displacement transducer of design is chip mainly with coupled mode multilayer film and exchange biased type multilayer film both at home and abroad, and the coercitive spin valve structure nano wire of difference is rarely had to research.It is sensor chip that [NiFe/Cu/Co/Cu] n Spin Valve Multilayered Nanowires is take in the present invention, has prepared a kind of giant magnetoresistance displacement transducer, for giant magnetic resistor material has carried out good try in the application in Magnetic Sensor field.
Summary of the invention
It is sensor chip that object of the present invention be take [NiFe/Cu/Co/Cu] n Multilayered Nanowires exactly, prepares giant magnetoresistance displacement transducer.The displacement transducer chip of the present invention's design is compared with the chip of domestic and international research, have the advantages such as volume is little, highly sensitive, the range of linearity is wide, GMR superior performance, the displacement transducer of design has that measuring process is simple, resolution is high, degree of accuracy is high, fast response time, the advantage such as practical.
Technical scheme of the present invention is as follows:
Utilizing [NiFe/Cu/Co/Cu] n Multilayered Nanowires is giant magnetoresistance displacement transducer prepared by sensor chip, and its composition comprises sensor chip, Helmholtz coils, direct supply, small magnet, DC digital voltmeter and ruler; The small magnet center of displacement transducer, sensor chip center and two Helmholtz coils axle center are in the same horizontal line; The direction of the externally-applied magnetic field of Helmholtz coils should be perpendicular to [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode.
Whole sensor device is arranged on a horizontal stand, and sensor chip centre distance horizontal stand height is 10～20cm, horizontal stand length 50～100cm; Helmholtz coils is positioned at the rear and front end of sensor chip, identical with sensor chip centre distance, is 5～15cm.
It is 1～5cm that described sensor chip adopts area
2four identical [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode R1, R2, R3 and R4, connect and compose bridge-type configuration with wire; Circuit connects constant-current device and voltage table, forms giant magnetoresistance sensor.
Described [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode R1 and R4 adopt high permeability materials shielding, and resistance maintains steady state value; [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode R2, R3 change with the variation of external magnetic field, and output voltage changes thereupon, and the ratio of voltage and electric current is magnetoelectricity resistance.
Described high permeability materials are selected magnetically soft alloy 1J79.
[NiFe/Cu/Co/Cu] n Multilayered Nanowires is comprised of NiFe layer and Cu/Co/Cu layer alternative arrangement, and diameter is 80～120nm; N is periodicity, and 1 NiFe layer and Cu/Co/Cu layer are 1 cycle, and n is 20～200.
[NiFe/Cu/Co/Cu] n Multilayered Nanowires total length is 700nm～20 μ m; NiFe coating forms by mass percentage: Ni74～85%, Fe15～26%, and thickness is 5～50nm; Co layer thickness is 10～50nm, and Cu layer thickness is 10～50nm.
Multilayered Nanowires [NiFe/Cu/Co/Cu]
npreparation method's patent (application number is 201210164263.7) technique of adopting us to apply for, method is as follows: utilize two-step anodization aluminum alloy pattern plate preparation [NiFe/Cu/Co/Cu]
nmultilayered Nanowires.NiFe layer and Cu/Co/Cu layer alternative arrangement form, and diameter is 80～120nm.Preferably Multilayered Nanowires total length is 80nm～20 μ m.[NiFe/Cu/Co/Cu]
nthe preparation method of Multilayered Nanowires, adopts two electrolytic tanks, utilizes three-electrode system to carry out double flute control current potential deposition; First two-step anodization aluminum film electrode is placed in to NiFe electrolytic tank, control current potential deposition NiFe alloy, through ultrasonic cleaning, is converted in Cu/Co/Cu electrolytic tank fast, by dipulse technology control current potential deposition Cu/Co/Cu, is 1 cycle, so repeats a n cycle; Obtain [NiFe/Cu/Co/Cu]
nmultilayered Nanowires.The described n cycle is preferably 1～250.Described three-electrode system is: auxiliary electrode is ruthenium titanium net, and contrast electrode is saturated calomel electrode SCE, and working electrode is the two-step anodization aluminium film of bottom metal spraying.The electrolytic solution of NiFe electrolytic tank is: NiSO
46H
2o50～90g/L, NiCl
26H
2o60～100g/L, H
3bO
320～40g/L, FeSO
47H
2o10～30g/L, C
6h
5na
3o
72H
2o40～60g/L, pH value is 2.5～3.0.The electrolytic solution of Cu/Co/Cu electrolytic tank is: CoSO
47H
2o140～160g/L, CuSO
45H
2o2～6g/L, H
3bO
330～50g/L, bath pH value is 4.5～5.0.NiFe alloy electrodeposition current potential Wei – 0.95～– 1.1V, NiFe coating forms by mass percentage: Ni74～85%, Fe15～26%; The electro-deposition current potential Wei – 0.4～– 0.6V of Cu; The electro-deposition current potential Wei – 0.8～– 1.0V of Co.
[NiFe/Cu/Co/Cu]
nspin Valve Multilayered Nanowires structural representation is shown in accompanying drawing 4.
Giant magnetoresistance displacement transducer of the present invention is highly sensitive, power consumption is little, cost is low, can be applicable to the Young modulus measurement, the measurement of metal heat-expansion coefficient, the detection of water surface liquid level of material, the aspects such as location of magnetic material.
Accompanying drawing explanation
Fig. 1: giant magnetoresistance displacement sensor device schematic diagram
Fig. 2: giant magnetoresistance displacement transducer chip structure schematic diagram
Fig. 3: the magneto-resistor curve of [NiFe/Cu/Co/Cu] n multi-layer nano linear array
Fig. 4: [NiFe/Cu/Co/Cu]
nspin Valve Multilayered Nanowires structural representation.
Fig. 5: the relation curve of [NiFe/Cu/Co/Cu] n giant magnetoresistance sensor measuring voltage and displacement
Specific implementation method
Following example is think to illustrate the present invention better and do not limit the present invention.
[NiFe/Cu/Co/Cu] n Multilayered Nanowires of take is sensor chip, prepared giant magnetoresistance displacement transducer, its composition comprises sensor chip, Helmholtz coils, direct supply, small magnet, DC digital voltmeter, ruler, whole sensor device is put on a horizontal stand, and accompanying drawing 1 is shown in by the schematic diagram of giant magnetoresistance displacement sensor device.
Its small magnet center of displacement transducer of the present invention, sensor chip center and two Helmholtz coils axle center in the same horizontal line, are 10～20cm apart from horizontal stand height, horizontal stand length 50～100cm; Helmholtz coils is positioned at the rear and front end of sensor chip, identical with sensor chip centre distance, is 5～15cm.While placing sensor chip, guarantee that the direction of the magnetic line of force and the axis direction of nano wire are parallel, the direction of the externally-applied magnetic field of Helmholtz coils should be perpendicular to [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode.
It is 1～5cm that sensor chip of the present invention adopts area
2four identical [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrodes, connect and compose bridge-type configuration with wire, see accompanying drawing 2.According to the circuit of accompanying drawing 2, connect constant-current device and voltage table, form giant magnetoresistance sensor.Wherein [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode R1, R4 adopt high permeability materials shielding, make its resistance maintain steady state value; [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode R2, R3 change with the variation of external magnetic field, and output voltage (U) changes thereupon, and the ratio of voltage and electric current is magnetoelectricity resistance.High permeability materials are selected magnetically soft alloy 1J79(Ni79Mo4Fe17, massfraction).
Sensor chip material of the present invention is [NiFe/Cu/Co/Cu]
nmultilayered Nanowires, its resistance value exists in the ，Gai region, region of a linear change within the scope of its saturation magnetic field, and variation and the external magnetic field of sensor chip magneto-resistor are linear, see accompanying drawing 3.Regulate Helmholtz coils make its magnetic field intensity between 1000～3000Oe linear zone in.
Sensor chip material of the present invention is Spin Valve Multilayered Nanowires [NiFe/Cu/Co/Cu]
n.NiFe layer and Cu/Co/Cu layer alternative arrangement form, and diameter is 80～120nm.N is periodicity, and 1 NiFe layer and Cu/Co/Cu layer are 1 cycle, and n is preferably 20～200.Preferably Multilayered Nanowires total length is 700nm～20 μ m.NiFe coating forms by mass percentage: Ni74～85%, Fe15～26%, thickness is 5～50nm.Co layer thickness is 10～50nm, and Cu layer thickness is 10～50nm.
Example 1
The small magnet center of displacement transducer, sensor chip center and two Helmholtz coils axle center in the same horizontal line, are 10cm apart from horizontal stand height, horizontal stand length 50cm; Helmholtz coils is positioned at the rear and front end of sensor chip, identical with sensor chip centre distance, is 5cm.While placing sensor chip, guarantee that the direction of the magnetic line of force and the axis direction of nano wire are parallel, the direction of the externally-applied magnetic field of Helmholtz coils should be perpendicular to [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode.
It is 1cm that sensor chip adopts area
2, four identical [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrodes, with wire, connect and compose bridge-type configuration, see accompanying drawing 2.According to the circuit of accompanying drawing 2, connect constant-current device and voltage table, form giant magnetoresistance sensor.Wherein [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode R1, R4 adopt high permeability materials shielding, make its resistance maintain steady state value; [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode R2, R3 change with the variation of external magnetic field, and output voltage (U) changes thereupon, and the ratio of voltage and electric current is magnetoelectricity resistance.High permeability materials are selected magnetically soft alloy 1J79(Ni79Mo4Fe17, massfraction).
Logical direct current is in Helmholtz coils, to work stable magnetic field in the linear zone of giant magnetoresistance chip, regulate Helmholtz coils make its magnetic field intensity between 1000～3000Oe linear zone in, the output voltage of while survey sensor, after sensor output voltage stabilization, small magnet is gradually near sensor, each displacement is fixed as 0.5cm, displacement record is X(cm), the corresponding output voltage of each displacement parameter, output voltage is designated as U(V), take U(V) be the coordinate longitudinal axis, X(cm) for the mapping of coordinate transverse axis, can obtain U-X relation curve.
Giant magnetoresistance displacement transducer chip is [NiFe/Cu/Co/Cu]
nmultilayered Nanowires, preparation technology is as follows: utilize two-step anodization aluminum alloy pattern plate to prepare Multilayered Nanowires, NiFe layer and Cu/Co/Cu layer alternative arrangement form, and diameter is 80～120nm.Preferably Multilayered Nanowires total length is 80nm～20 μ m.Adopt two electrolytic tanks, utilize three-electrode system to carry out double flute control current potential deposition [NiFe/Cu/Co/Cu]
nmultilayered Nanowires; First two-step anodization aluminum film electrode is placed in to NiFe electrolytic tank, control current potential deposition NiFe alloy, through ultrasonic cleaning, is converted in Cu/Co/Cu electrolytic tank fast, by dipulse technology control current potential deposition Cu/Co/Cu, is 1 cycle, so repeats a n cycle; Obtain [NiFe/Cu/Co/Cu]
nmultilayered Nanowires.The described n cycle is preferably 1～250.Described three-electrode system is: auxiliary electrode is ruthenium titanium net, and contrast electrode is saturated calomel electrode SCE, and working electrode is the two-step anodization aluminium film of bottom metal spraying.The electrolytic solution of NiFe electrolytic tank is: NiSO
46H
2o50～90g/L, NiCl
26H
2o60～100g/L, H
3bO
320～40g/L, FeSO
47H
2o10～30g/L, C
6h
5na
3o
72H
2o40～60g/L, pH value is 2.5～3.0.The electrolytic solution of Cu/Co/Cu electrolytic tank is: CoSO
47H
2o140～160g/L, CuSO
45H
2o2～6g/L, H
3bO
330～50g/L, bath pH value is 4.5～5.0.NiFe alloy electrodeposition current potential Wei – 0.95～– 1.1V, NiFe coating forms by mass percentage: Ni74～85%, Fe15～26%; The electro-deposition current potential Wei – 0.4～– 0.6V of Cu; The electro-deposition current potential Wei – 0.8～– 1.0V of Co.In example 2～4 [NiFe/Cu/Co/Cu]
nthe preparation of Multilayered Nanowires all adopts this technique.[NiFe/Cu/Co/Cu] that giant magnetoresistance displacement transducer chip is selected
nmultilayered Nanowires total length is 700nm, and diameter is 80nm.Periodicity n is 20.Wherein in NiFe alloy, the quality percentage composition of Ni, Fe is respectively: Ni74%, Fe26%, thickness is 5nm.Co layer thickness is 10nm, and Cu layer thickness is 10nm.The output voltage of experiment test (U) is shown in curve 1 in accompanying drawing 5 with the relation curve of displacement (X).After curve 1 matching, obtaining U-X linear equation is: y=10.405x+140.323, related coefficient 0.99972.
The effect of sensor is non-electrical signal to be transformed into the electric signal that can measure changing according to certain rules by sensor, as voltage, current signal, to meet the requirements such as transmission, processing, storage, demonstration, record and control of information.So in the present invention, the action effect of displacement transducer is to change displacement signal into can measure voltage signal, can realize automatic measurement like this.This is the effect of sensor in the present invention.Obtain the linear relationship of voltage and displacement.
Example 2
Displacement transducer small magnet center, sensor chip center and two Helmholtz coils axle center in the same horizontal line, apart from horizontal stand height, be 20cm, horizontal stand length 100cm; Helmholtz coils is positioned at the rear and front end of sensor chip, identical with sensor chip centre distance, is 15cm.While placing sensor chip, guarantee that the direction of the magnetic line of force and the axis direction of nano wire are parallel, the direction of the externally-applied magnetic field of Helmholtz coils should be perpendicular to [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode.
It is 5cm that sensor chip adopts area
2, four identical [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrodes, with wire, connect and compose bridge-type configuration, see accompanying drawing 2.According to the circuit of accompanying drawing 2, connect constant-current device and voltage table, form giant magnetoresistance sensor.Wherein [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode R1, R4 adopt high permeability materials shielding, make its resistance maintain steady state value; [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode R2, R3 change with the variation of external magnetic field, and output voltage (U) changes thereupon, and the ratio of voltage and electric current is magnetoelectricity resistance.High permeability materials are selected magnetically soft alloy 1J79(Ni79Mo4Fe17, massfraction).
Logical DC current is in Helmholtz coils, by work stable magnetic field in the linear zone of giant magnetoresistance chip, regulate Helmholtz coils make its magnetic field intensity between 1000～3000Oe linear zone in, the output voltage of while survey sensor, after sensor output voltage stabilization, small magnet is gradually near sensor, each displacement is fixed as 0.5cm, displacement record is X(cm), the corresponding output voltage of each displacement parameter, output voltage is designated as U(V), take U(V) be the coordinate longitudinal axis, X(cm), for the mapping of coordinate transverse axis, can obtain U-X relation curve.
[NiFe/Cu/Co/Cu] that giant magnetoresistance displacement transducer chip is selected
nmultilayered Nanowires total length is 20 μ m, and diameter is 80nm.Periodicity n is 250.Wherein in NiFe alloy, the quality percentage composition of Ni, Fe is respectively: Ni80%, Fe20%, and thickness is 15nm, and the thickness of Co layer is 15nm, and Cu layer thickness is 25nm.The output voltage of experiment test (U) is shown in curve 2 in accompanying drawing 5 with the relation curve of displacement (X).After curve 2 matchings, obtaining U-X linear equation is: y=10.105x+146.172, related coefficient 0.99980.
Example 3
Displacement transducer small magnet center, sensor chip center and two Helmholtz coils axle center in the same horizontal line, apart from horizontal stand height, be 15cm, horizontal stand length 60ccm; Helmholtz coils is positioned at the rear and front end of sensor chip, identical with sensor chip centre distance, is 10cm.While placing sensor chip, guarantee that the direction of the magnetic line of force and the axis direction of nano wire are parallel, the direction of the externally-applied magnetic field of Helmholtz coils should be perpendicular to [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode.
It is 2cm that sensor chip adopts area
2, four identical [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrodes, with wire, connect and compose bridge-type configuration, see accompanying drawing 2.According to the circuit of accompanying drawing 2, connect constant-current device and voltage table, form giant magnetoresistance sensor.Wherein [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode R1, R4 adopt high permeability materials shielding, make its resistance maintain steady state value; [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode R2, R3 change with the variation of external magnetic field, and output voltage (U) changes thereupon, and the ratio of voltage and electric current is magnetoelectricity resistance.High permeability materials are selected magnetically soft alloy 1J79(Ni79Mo4Fe17, massfraction).
Logical DC current is in Helmholtz coils, by work stable magnetic field in the linear zone of giant magnetoresistance chip, regulate Helmholtz coils make its magnetic field intensity between 1000～3000Oe linear zone in, the output voltage of while survey sensor, after sensor output voltage stabilization, small magnet is gradually near sensor, each displacement is fixed as 0.5cm, displacement record is X(cm), the corresponding output voltage of each displacement parameter, output voltage is designated as U(V), take U(V) be the coordinate longitudinal axis, X(cm), for the mapping of coordinate transverse axis, can obtain U-X relation curve.
[NiFe/Cu/Co/Cu] that giant magnetoresistance displacement transducer chip is selected
nmultilayered Nanowires total length is 15 μ m, and diameter is 120nm.Periodicity n is 100.Wherein in NiFe alloy, the quality percentage composition of Ni, Fe is respectively: Ni85%, Fe15%, thickness is 25nm.Co layer thickness is 25nm, and Cu layer thickness is 50nm.The output voltage of experiment test (U) is shown in curve 3 in accompanying drawing 5 with the relation curve of displacement (X).After curve 3 matchings, obtaining U-X linear equation is: y=9.914x+159.655, related coefficient 0.99979.
Example 4
Displacement transducer small magnet center, sensor chip center and two Helmholtz coils axle center in the same horizontal line, apart from horizontal stand height, be 18cm, horizontal stand length 80ccm; Helmholtz coils is positioned at the rear and front end of sensor chip, identical with sensor chip centre distance, is 15cm.While placing sensor chip, guarantee that the direction of the magnetic line of force and the axis direction of nano wire are parallel, the direction of the externally-applied magnetic field of Helmholtz coils should be perpendicular to [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode.
It is 4cm that sensor chip adopts area
2, four identical [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrodes, with wire, connect and compose bridge-type configuration, see accompanying drawing 2.According to the circuit of accompanying drawing 2, connect constant-current device and voltage table, form giant magnetoresistance sensor.Wherein [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode R1, R4 adopt high permeability materials shielding, make its resistance maintain steady state value; [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode R2, R3 change with the variation of external magnetic field, and output voltage (U) changes thereupon, and the ratio of voltage and electric current is magnetoelectricity resistance.High permeability materials are selected magnetically soft alloy 1J79(Ni79Mo4Fe17 massfraction).
Logical DC current is in Helmholtz coils, by work stable magnetic field in the linear zone of giant magnetoresistance chip, regulate Helmholtz coils make its magnetic field intensity between 1000～3000Oe linear zone in, the output voltage of while survey sensor, after sensor output voltage stabilization, small magnet is gradually near sensor, each displacement is fixed as 0.5cm, displacement record is X(cm), the corresponding output voltage of each displacement parameter, output voltage is designated as U(V), take U(V) be the coordinate longitudinal axis, X(cm), for the mapping of coordinate transverse axis, can obtain U-X relation curve.
[NiFe/Cu/Co/Cu] that giant magnetoresistance displacement transducer chip is selected
nmultilayered Nanowires total length is 8 μ m, and diameter is 80nm.Periodicity n is 50.Wherein in NiFe alloy, the quality percentage composition of Ni, Fe is respectively: Ni80%, Fe20%, thickness is 50nm.Co layer thickness is 50nm, and Cu layer thickness is 30nm.The output voltage of experiment test (U) is shown in curve 4 in accompanying drawing 5 with the relation curve of displacement (X).After curve 4 matchings, obtaining U-X linear equation is: y=9.569x+170.813, related coefficient 0.99973.
Claims (7)
1. utilizing [NiFe/Cu/Co/Cu] n Multilayered Nanowires is giant magnetoresistance displacement transducer prepared by sensor chip, and its composition comprises sensor chip, Helmholtz coils, direct supply, small magnet, DC digital voltmeter and ruler; The small magnet center of displacement transducer, sensor chip center and two Helmholtz coils axle center are in the same horizontal line; The direction of the externally-applied magnetic field of Helmholtz coils should be perpendicular to [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode.
2. sensor as claimed in claim 1, is characterized in that whole sensor device is arranged on a horizontal stand, and sensor chip centre distance horizontal stand height is 10～20cm, horizontal stand length 50～100cm; Helmholtz coils is positioned at the rear and front end of sensor chip, identical with sensor chip centre distance, is 5～15cm.
3. sensor as claimed in claim 2, is characterized in that it is 1～5cm that described sensor chip adopts area
2four identical [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode R1, R2, R3 and R4, connect and compose bridge-type configuration with wire; Circuit connects constant-current device and voltage table, forms giant magnetoresistance sensor.
4. sensor as claimed in claim 3, is characterized in that described [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode R1 and R4 adopt high permeability materials shielding, and resistance maintains steady state value; [NiFe/Cu/Co/Cu] n Multilayered Nanowires array electrode R2, R3 change with the variation of external magnetic field, and output voltage changes thereupon, and the ratio of voltage and electric current is magnetoelectricity resistance.
5. sensor as claimed in claim 4, is characterized in that described high permeability materials select magnetically soft alloy 1J79.
6. sensor as claimed in claim 1, is characterized in that [NiFe/Cu/Co/Cu] n Multilayered Nanowires is comprised of NiFe layer and Cu/Co/Cu layer alternative arrangement, and diameter is 80～120nm; N is periodicity, and 1 NiFe layer and Cu/Co/Cu layer are 1 cycle, and n is 20～200.
7. sensor as claimed in claim 6, is characterized in that Multilayered Nanowires total length is 700nm～20 μ m; NiFe coating forms by mass percentage: Ni74～85%, Fe15～26%, and thickness is 5～50nm; Co layer thickness is 10～50nm, and Cu layer thickness is 10～50nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104152958A (en) * | 2014-08-14 | 2014-11-19 | 天津大学 | Method for manufacturing multilayer nanowires by template electrochemical synthesis technology |
| CN106949826A (en) * | 2015-09-25 | 2017-07-14 | 通用电气公司 | Recognize the wheel phyllomorphosis in turbine |
-
2013
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104152958A (en) * | 2014-08-14 | 2014-11-19 | 天津大学 | Method for manufacturing multilayer nanowires by template electrochemical synthesis technology |
| CN106949826A (en) * | 2015-09-25 | 2017-07-14 | 通用电气公司 | Recognize the wheel phyllomorphosis in turbine |
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Application publication date: 20140226 |