CN103600312A - Method for pasting silicon polished wafer template - Google Patents

Method for pasting silicon polished wafer template Download PDF

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Publication number
CN103600312A
CN103600312A CN201310477722.1A CN201310477722A CN103600312A CN 103600312 A CN103600312 A CN 103600312A CN 201310477722 A CN201310477722 A CN 201310477722A CN 103600312 A CN103600312 A CN 103600312A
Authority
CN
China
Prior art keywords
template
silicon polished
polished wafer
silicon
pasting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310477722.1A
Other languages
Chinese (zh)
Inventor
袁泽山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WANXIANG SILICON-PEAK ELECTRINICS Co Ltd
Original Assignee
WANXIANG SILICON-PEAK ELECTRINICS Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WANXIANG SILICON-PEAK ELECTRINICS Co Ltd filed Critical WANXIANG SILICON-PEAK ELECTRINICS Co Ltd
Priority to CN201310477722.1A priority Critical patent/CN103600312A/en
Publication of CN103600312A publication Critical patent/CN103600312A/en
Pending legal-status Critical Current

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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention relates to a method for pasting a silicon polished wafer template. The method for pasting the silicon polished wafer template comprises firstly, uncovering part of wax paper which is arranged on the reverse side of the silicon polished wafer template and pasting a wax paper uncovered portion of the reverse side of the silicon polished wafer template on a ceramic disc; then, wrapping a cylindrical object with a sponge, forming into a pressing part and pressing the front side of the silicon polished wafer template through the pressing part; at last, pulling the wax paper which is arranged on the reverse side of the silicon polished wafer slowly with one hand, rolling the pressing piece along the pulling direction of the wax paper which is arranged on the reverse side of the silicon polished wafer with the other hand until the wax paper which is arranged on the reverse side of the silicon polished wafer is completely separated from the reverse side of the template and the template is completely pasted on the ceramic disc. According to the method for pasting the silicon polished wafer template, the sponge inside the pressing piece is uniformly pressed into a template hole of the silicon polished wafer template during rolling according to self-weight, the silicon polished wafer template is avoided from being creased to generate bubbles, and accordingly the smoothness during silicon polished wafer production is improved.

Description

A kind of method of pasting silicon polished template
Technical field
The present invention relates to a kind of method of pasting silicon polished template, particularly silicon polished template is attached to the method on ceramic disk.
Background technology
At present, while pasting silicon polished template, on one side break the mold backboard mercolized wax paper, adopt blockage plastic plate firmly to scrape template surface on one side, in this process, the area because of plastic plate is less than template on the one hand, easily makes template purse up and produces bubble; On the other hand, owing to thering is the pattern hole caving inward in template, plastic plate cannot scrape too greatly the empty edge in pattern hole, also easily cause bubble, if plastic plate is too little, whether need to repeatedly scrape, discontinuity also easily makes template purse up and produce bubble, and in pattern hole, exist bubble directly to affect the local flatness of silicon chip after polishing.
Summary of the invention
The object of this invention is to provide a kind of method of pasting silicon polished template that can avoid template to purse up and produce bubble.
The technical scheme that the present invention takes is: a kind of method of pasting silicon polished template, it is characterized in that first opening the part paraffin paper at the silicon polished template back side, and the back side of silicon polished template being opened to paraffin paper part is attached on ceramic disk; Then, by cylindric object, with making casting die after sponge wrapping, and it is positive with casting die, to push down silicon polished template; Afterwards, slowly draw on the other hand the paraffin paper at the silicon polished template back side, on the other hand along drawing the paraffin paper direction rolling casting die at the silicon polished template back side, until the paraffin paper at the template back side is thrown off from the template back side completely, template is just attached on ceramic disk completely.
Adopt the present invention, the sponge in casting die relies on deadweight, when rolling, is evenly pressed in the pattern hole of silicon polished template, avoids silicon polished template purse up and produce bubble, thereby has improved the flatness of producing when silicon polished.
the specific embodiment
Below in conjunction with specific embodiment, the invention will be further described.Specifically comprise the steps:
One, first open the part paraffin paper at the silicon polished template back side, the back side of silicon polished template being opened to paraffin paper part is attached on ceramic disk.
Two, then, by being highly more than or equal to the cylindric object of silicon polished template, with thick sponge wrapping, after skin, make casting die, and it is positive with casting die, to push down silicon polished template.
Three, afterwards, slowly draw on the other hand the paraffin paper at the silicon polished template back side, on the other hand along drawing the paraffin paper direction rolling casting die at the silicon polished template back side, until the paraffin paper at the template back side is thrown off from the template back side completely, template is just attached on ceramic disk completely.

Claims (1)

1. paste a method for silicon polished template, it is characterized in that first opening the part paraffin paper at the silicon polished template back side, the back side of silicon polished template being opened to paraffin paper part is attached on ceramic disk; Then, by cylindric object, with making casting die after sponge wrapping, and it is positive with casting die, to push down silicon polished template; Afterwards, slowly draw on the other hand the paraffin paper at the silicon polished template back side, on the other hand along drawing the paraffin paper direction rolling casting die at the silicon polished template back side, until the paraffin paper at the template back side is thrown off from the template back side completely, template is just attached on ceramic disk completely.
CN201310477722.1A 2013-10-14 2013-10-14 Method for pasting silicon polished wafer template Pending CN103600312A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310477722.1A CN103600312A (en) 2013-10-14 2013-10-14 Method for pasting silicon polished wafer template

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310477722.1A CN103600312A (en) 2013-10-14 2013-10-14 Method for pasting silicon polished wafer template

Publications (1)

Publication Number Publication Date
CN103600312A true CN103600312A (en) 2014-02-26

Family

ID=50118608

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310477722.1A Pending CN103600312A (en) 2013-10-14 2013-10-14 Method for pasting silicon polished wafer template

Country Status (1)

Country Link
CN (1) CN103600312A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2687584A1 (en) * 1992-02-24 1993-08-27 Mizoule Henri Printing method using modelling clay, printed sheet obtained and printing kit for implementing the method
JPH08224785A (en) * 1995-02-21 1996-09-03 Dainippon Printing Co Ltd Method for sticking film sheets together and film sheets stuck together
CN1591740A (en) * 1997-10-01 2005-03-09 三菱电机株式会社 Mfg. device for plate with functional film, its mfg. method and plate
CN101954773A (en) * 2010-08-09 2011-01-26 安徽鑫昊等离子显示器件有限公司 Roller device for pasting graphite heat-conducting strips
CN102490439A (en) * 2011-12-15 2012-06-13 天津中环领先材料技术有限公司 Waxy surface mount device process adopting zone-melt single crystal silicon double-side polished chip for IGBT (insulated gate bipolar transistor)
CN202293574U (en) * 2011-10-31 2012-07-04 山东科技大学 Film coating device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2687584A1 (en) * 1992-02-24 1993-08-27 Mizoule Henri Printing method using modelling clay, printed sheet obtained and printing kit for implementing the method
JPH08224785A (en) * 1995-02-21 1996-09-03 Dainippon Printing Co Ltd Method for sticking film sheets together and film sheets stuck together
CN1591740A (en) * 1997-10-01 2005-03-09 三菱电机株式会社 Mfg. device for plate with functional film, its mfg. method and plate
CN101954773A (en) * 2010-08-09 2011-01-26 安徽鑫昊等离子显示器件有限公司 Roller device for pasting graphite heat-conducting strips
CN202293574U (en) * 2011-10-31 2012-07-04 山东科技大学 Film coating device
CN102490439A (en) * 2011-12-15 2012-06-13 天津中环领先材料技术有限公司 Waxy surface mount device process adopting zone-melt single crystal silicon double-side polished chip for IGBT (insulated gate bipolar transistor)

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C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20140226