CN103595249A - Direct current boosted circuit based on reverse conducting switch - Google Patents

Direct current boosted circuit based on reverse conducting switch Download PDF

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Publication number
CN103595249A
CN103595249A CN201310493173.7A CN201310493173A CN103595249A CN 103595249 A CN103595249 A CN 103595249A CN 201310493173 A CN201310493173 A CN 201310493173A CN 103595249 A CN103595249 A CN 103595249A
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switch
diode
electrochemical capacitor
leading
mosfet
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CN201310493173.7A
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CN103595249B (en
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渠浩
杨喜军
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Shanghai Huansheng New Energy & Technology Co ltd
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Shanghai Jiaotong University
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Abstract

The invention discloses a direct current boosted circuit based on a reverse conducting switch, and belongs to the technical field of power electronics. The direct current boosted circuit comprises a rectifying circuit and an inverter circuit, wherein the rectifying circuit is composed of four rectifying units and a follow current unit, the rectifying circuits are sequentially connected in series and based on the reverse conducting switch, and the rectifying circuit inputs two paths of direct current voltages and outputs a path of direct current voltages. The inverter circuit inputs the direct current voltages and outputs the two paths of direct current voltages through a high-frequency isolation transformer and a half-wave rectifier to supply power to the backward stage rectifying circuit. The direct current boosted circuit has the boosting function and the electric isolation function and has the advantages of being high in boosting capacity, simple in structure and low in cost, and the more the stages are, the higher the grades of the output direct current voltages are.

Description

Based on the contrary DC voltage booster circuit of switch of leading
Technical field
What the present invention relates to is a kind of AC-DC converter of electric and electronic technical field, specifically a kind of based on against leading the DC voltage booster circuit of switch, can obtain compared with High Level DC Voltage output booster circuit.
Background technology
Along with the development of Technics of Power Electronic Conversion technology, many DC power supply occasions that need high-voltage dc voltage have been there are, as Laser Power Devices, ozone generator, plasma cutting machine striking device etc.
So far, support the constituted mode of the booster circuit of relatively high power output roughly to comprise following two classes: the active or passive scheme that (1) utilizes inductance component and transformer to boost; (2) the active or passive scheme of DC converter output parallel connection.The former boost capability is limited, and the latter need to consider converter output voltage-sharing, cuts both ways, complicated but their something in common is circuit structure, and it is higher to control difficulty.
Along with the expansion of practical application, designing a kind of DC voltage booster circuit based on against leading switch simple in structure, that have stronger boost capability has become one of considering when being engaged in of those skilled in the art.
Through the retrieval of prior art is found, publication number is that mono-kind of 201063536 utility model patent < < has in the power supply changeover device > > of Active Power Factor Correction and discloses a kind of traditional two-stage voltage doubling rectifing circuit, and boost capability is lower.Publication number is that in patent of invention < < voltage doubling rectifing circuit > > of 101783599A, to disclose a kind of rectification circuit be AC-DC circuit, circuit structure is load comparatively, 13.56MHz signal input, support that power grade is lower, boost capability is higher.By disclosing a kind of DC-DC circuit, there is higher boost capability simultaneously, need three-way power: the pulse signal of direct voltage source, two-way phase shifting, support that power grade is lower.
Based on above analysis, for the application scenario of high-voltage DC power supply, need to release a kind of simple, safe and reliable, with low cost and boost capability is strong based on the contrary DC voltage booster circuit of switch of leading.
Summary of the invention
The present invention is directed to the above-mentioned deficiency of prior art, proposed a kind ofly based on contrary, to lead the DC voltage booster circuit of switch, achieve high-voltage dc voltage output, have advantages of simple in structure, control easy, with low cost and the ratio of boosting is high.
The present invention is achieved by the following technical solutions, the present invention includes rectification circuit and inverter circuit,, rectification circuit is input as two-way direct voltage, exports a road direct voltage; Inverter circuit input direct voltage, by high-frequency isolation transformer and half-wave rectifier output two-way direct voltage, is the power supply of rear class rectification circuit;
Described rectification circuit comprises at least four rectification units and an afterflow unit; Wherein:
The first rectification unit comprises the first diode, the first electrochemical capacitor and first, the second contrary switch of leading, wherein the negative electrode of the first diode is connected with the anode of the second diode of the second rectification unit after being connected with the positive pole of the first electrochemical capacitor, the anode of the first diode is connected with the first DC power supply in inverter circuit, the negative pole of the first electrochemical capacitor is connected against leading MOSFET source electrode in switch with second against leading MOSFET drain electrode in switch with first, first against leading MOSFET source ground in switch, second is connected with the second DC power supply in inverter circuit against leading MOSFET drain electrode in switch, first against leading the built-in anti-paralleled diode of MOSFET itself in switch, second against leading the built-in anti-paralleled diode of MOSFET itself in switch,
The second rectification unit comprises the second diode, the second electrochemical capacitor and the 3rd, the 4th contrary switch of leading, wherein the negative electrode of the second diode is connected with the anode of the 3rd diode of the 3rd rectification unit after being connected with the positive pole of the second electrochemical capacitor, the negative pole of the second electrochemical capacitor is connected against leading MOSFET source electrode in switch with the 4th against leading MOSFET drain electrode in switch with the 3rd, the 3rd against leading MOSFET source ground in switch, the 4th is connected with the second DC power supply in inverter circuit against leading MOSFET drain electrode in switch, the 3rd against leading the built-in anti-paralleled diode of MOSFET itself in switch, the 4th against leading the built-in anti-paralleled diode of MOSFET itself in switch,
The 3rd rectification unit comprises the 3rd diode, the 3rd electrochemical capacitor and the 5th, the 6th contrary switch of leading, wherein the negative electrode of the 3rd diode is connected with the anode of the 4th diode of the 4th rectification unit after being connected with the positive pole of the 3rd electrochemical capacitor, the negative pole of the 3rd electrochemical capacitor is connected against leading MOSFET source electrode in switch with the 6th against leading MOSFET drain electrode in switch with the 5th, the 5th against leading MOSFET source ground in switch, the 6th is connected with the second DC power supply in inverter circuit against leading MOSFET drain electrode in switch, the 5th against leading the built-in anti-paralleled diode of MOSFET itself in switch, the 6th against leading the built-in anti-paralleled diode of MOSFET itself in switch,
The 4th rectification unit comprises the 4th diode, the 4th electrochemical capacitor and the 7th contrary switch of leading, wherein the negative electrode of the 4th diode is connected with the negative electrode of the 5th diode in afterflow unit after being connected with the positive pole of the 4th electrochemical capacitor, form output cathode, the negative pole of the 4th electrochemical capacitor is connected against leading MOSFET drain electrode in switch with the 7th, the 7th against leading MOSFET source ground in switch, and the 7th against leading the built-in anti-paralleled diode of MOSFET itself in switch;
Described afterflow unit comprises the 5th diode, and wherein the negative electrode of the 5th diode forms output cathode, its anodic formation output negative pole;
Described inverter circuit comprises the 5th electrochemical capacitor, a voltage source inverter, a high frequency transformer, the 6th diode, the 7th diode and the 6th electrochemical capacitor, the 7th electrochemical capacitor, wherein the positive pole of the 5th electrochemical capacitor is connected with negative pole with the positive pole of input the first DC power supply respectively with negative pole, and be connected with voltage source inverter input, voltage source inverter input is connected with the two ends of high frequency transformer armature winding, two secondary winding of high frequency transformer are with shared tap, tap ground connection, first time level terminal T1 is connected with the anode of the 6th diode in rectification circuit, the positive pole of the negative electrode of the 6th diode and the 6th electrochemical capacitor is connected with the anode of the first diode in rectification circuit, after second subprime winding T2 is connected with the anode of the 7th diode, and be connected with another input of rectification circuit, the minus earth of the 6th electrochemical capacitor, the minus earth of the 7th electrochemical capacitor, the 6th diode and the 6th electrochemical capacitor form a half-wave rectifier, the 7th diode and the 7th electrochemical capacitor form a half-wave rectifier.
The 4th rectification unit of the present invention further comprises the 8th contrary switch of leading, the negative pole of the 4th electrochemical capacitor and the 8th is against leading MOSFET grounded drain in switch, the 8th is connected with the second DC power supply in inverter circuit against leading MOSFET source electrode in switch, and the 8th against leading the built-in anti-paralleled diode of MOSFET itself in switch.
Of the present invention based on the contrary DC voltage booster circuit of switch of leading:
Inverter circuit input direct voltage Ui1, voltage source inverter is reverse into single-phase square wave AC voltage by direct voltage, through high frequency transformer and half-wave rectifier output two-way direct voltage Ui4 and Ui5, is the power supply of rear class rectification circuit.Wherein alternating voltage Ui2, the 6th diode and the 6th electrochemical capacitor form the first half-wave rectifier, and alternating voltage Ui3, the 7th diode D7 and the 7th electrochemical capacitor form the second half-wave rectifier;
Under field conditions (factors), in rectification circuit, contrary lead switch all in off state for every, electrochemical capacitor E1, E2, E3, E4 are full of Ui4 and Ui5 voltage difference, and difference, for bearing, can not be charged;
If eight contrary leads and only have first contraryly while leading switch conduction in switch, direct voltage Ui5 is that the first electrochemical capacitor E1 charges by the first diode;
If eight contrary leads and only have the second contrary switch and the 3rd contrary while leading switch conduction of leading in switch, direct voltage Ui5 connects with the first electrochemical capacitor E1 voltages in sequence, by the second diode, is that the second electrochemical capacitor E2 charges;
If eight contrary leads and only have the 4th contrary switch and the 5th contrary while leading switch conduction of leading in switch, direct voltage Ui5 connects with the second electrochemical capacitor E2 voltages in sequence, by the 3rd diode, is that the 3rd electrochemical capacitor E3 charges;
If eight contrary leads and only have the 6th contrary switch and the 7th contrary while leading switch conduction of leading in switch, direct voltage Ui5 connects with the 3rd electrochemical capacitor E3 voltages in sequence, by the 4th diode, is that the 4th electrochemical capacitor E4 charges;
The 8th can not adopt against leading switch, while further increasing booster circuit progression, just uses;
In freewheeling circuit, the 5th diode plays afterflow effect.
Visible, each new rectification unit work, corresponding electrochemical capacitor voltage increases the amplitude of direct voltage Ui5, along with the increase of progression, output voltage increases step by step, and final output dc voltage is drawn with anode (output negative pole) by the negative electrode (output cathode) of the 5th diode.
By finding out above, the full pressure of the 4th electrochemical capacitor is far away higher than the amplitude of any DC power supply voltage, and output voltage is doubled.The contrary switch of leading itself is not during triggering and conducting, and built-in anti-paralleled diode can be so that corresponding electrochemical capacitor natural commutation be equivalent to bidirectional switch during MOSFET conducting, similar synchronous rectification, and conduction voltage drop is lower, can reduce conduction loss, improves conversion efficiency.Diode D1~D4, D6~D7 are the reverse fast recovery diode of power-type, and diode D5 is power-type general-purpose diode, play the effect into inductive load afterflow.
The present invention also can adopt the above rectification units of five and five, and structure and the connected mode of the rectification unit structure of increase and connected mode and above-mentioned the second rectification unit, the 3rd rectification unit, the 4th rectification unit are identical.
Compared with prior art, the present invention has following beneficial effect: the present invention has boost function and electrical isolation effect, more multiple output DC electric pressure is higher for progression, have boost capability strong, support power grade large, simple in structure, without complex control, the advantage such as with low cost.
Accompanying drawing explanation
By reading the detailed description of non-limiting example being done with reference to the following drawings, it is more obvious that other features, objects and advantages of the present invention will become:
Fig. 1 is the circuit theory diagrams of one embodiment of the invention;
Fig. 2 is the circuit theory diagrams of another embodiment of the present invention.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in detail.Following examples will contribute to those skilled in the art further to understand the present invention, but not limit in any form the present invention.It should be pointed out that to those skilled in the art, without departing from the inventive concept of the premise, can also make some distortion and improvement.These all belong to protection scope of the present invention.
As shown in Figure 1, what one embodiment of the invention provided leads the DC voltage booster circuit of switch based on contrary, comprises rectification circuit 1 and inverter circuit 2, inverter circuit 2 input direct voltages, output two-way direct voltage.Rectification circuit 1 is connected with inverter circuit 2 outputs, input two-way direct voltage, output high-voltage dc voltage.Inverter circuit 2 outputs share the two-way alternating voltage of tap, by two-way half-wave rectifier, obtain two-way direct voltage, are 1 power supply of rear class rectification circuit, and rectification circuit 1 is connected in series and forms successively by level Four or multi-stage rectifying unit.
Described rectification circuit 1 comprises four rectification units and an afterflow unit; Wherein:
The first rectification unit comprises the first diode D1, the first electrochemical capacitor E1 and the first contrary switch S 11 of leading, the second contrary switch S 12 of leading, wherein the negative electrode of the first diode D1 is connected with the anode of the second diode D2 of the second rectification unit after being connected with the positive pole of the first electrochemical capacitor E1, the anode of the first diode D1 is connected with the first DC power supply in inverter circuit 2, the negative pole of the first electrochemical capacitor E1 and first contrary is led in switch S 11 MOSFET drain electrode and second against leading MOSFET source ground in switch S 12, first against leading MOSFET source ground in switch S 11, second is connected with the second DC power supply in inverter circuit 2 against leading MOSFET drain electrode in switch S 12, first against leading the built-in anti-paralleled diode of MOSFET itself in switch S 11, second against leading the built-in anti-paralleled diode of MOSFET itself in switch S 12,
The second rectification unit comprises the second diode D2, the second electrochemical capacitor E2 and the 3rd contrary switch S 21 of leading, the 4th contrary switch S 22 of leading, wherein the negative electrode of the second diode D2 is connected with the anode of the 3rd diode D3 of the 3rd rectification unit after being connected with the positive pole of the second electrochemical capacitor E2, the negative pole of the second electrochemical capacitor E2 and the 3rd contrary is led in switch S 21 MOSFET drain electrode and the 4th against leading MOSFET source ground in switch S 22, the 3rd against leading MOSFET source ground in switch S 21, the 4th is connected with the second DC power supply in inverter circuit 2 against leading MOSFET drain electrode in switch S 22, the 3rd against leading the built-in anti-paralleled diode of MOSFET itself in switch S 21, the 4th against leading the built-in anti-paralleled diode of MOSFET itself in switch S 22,
The 3rd rectification unit comprises the 3rd diode D3, the 3rd electrochemical capacitor E3 and the 5th contrary switch S 31 of leading, the 6th contrary switch S 32 of leading, wherein the negative electrode of the 3rd diode D3 is connected with the anode of the 4th diode D4 of the 4th rectification unit after being connected with the positive pole of the 3rd electrochemical capacitor E3, the negative pole of the 3rd electrochemical capacitor E3 and the 5th contrary is led in switch S 31 MOSFET drain electrode and the 6th against leading MOSFET source ground in switch S 32, the 5th against leading MOSFET source ground in switch S 31, the 6th is connected with the second DC power supply in inverter circuit 2 against leading MOSFET drain electrode in switch S 32, the 5th against leading the built-in anti-paralleled diode of MOSFET itself in switch S 31, the 6th against leading the built-in anti-paralleled diode of MOSFET itself in switch S 32,
The 4th rectification unit comprises the 4th diode D4, the 4th electrochemical capacitor E4 and the 7th contrary switch S 41 of leading, the 8th contrary switch S 42 of leading, wherein the negative electrode of the 4th diode D4 is connected with the negative electrode of the 5th diode D5 in afterflow unit after being connected with the positive pole of the 4th electrochemical capacitor E4, form output cathode, the negative pole of the 4th electrochemical capacitor E4 is connected against leading MOSFET source electrode in switch S 42 with the 8th against leading MOSFET drain electrode in switch S 41 with the 7th, the 7th against leading MOSFET source ground in switch S 41, the 8th is connected with the second DC power supply in inverter circuit 2 against leading MOSFET drain electrode in switch S 42, the 7th against leading the built-in anti-paralleled diode of MOSFET itself in switch S 41, the 8th against leading the built-in anti-paralleled diode of MOSFET itself in switch S 42,
Described afterflow unit comprises the 5th diode D5, and wherein the negative electrode of the 5th diode D5 forms output cathode, its anodic formation output negative pole.
Described inverter circuit 2 comprises the 5th electrochemical capacitor E5, a voltage source inverter I1, a high frequency transformer TR1, the 6th diode D6, the 6th electrochemical capacitor E6, the 7th diode D7 and the 7th electrochemical capacitor E7, wherein the positive pole of the 5th electrochemical capacitor E5 is connected with negative pole with the positive pole of input the first DC power supply respectively with negative pole, and be connected with voltage source inverter input, voltage source inverter input is connected with the two ends of high frequency transformer armature winding, two secondary winding of high frequency transformer are with shared tap, tap ground connection, , secondary terminal T1 is connected with the 6th diode anode, the positive pole of the negative electrode of the 6th diode and the 6th electrochemical capacitor is connected with the anode of the first diode in rectification circuit, secondary terminal T2 is connected with the anode of the 7th diode D7, the negative electrode of the 7th diode D7 is connected rear and is connected with another input of rectification circuit with the anode of the 7th electric capacity, the minus earth of the 6th electrochemical capacitor, the minus earth of the 7th electrochemical capacitor.The 6th diode form a half-wave rectifier with the 6th electrochemical capacitor, the 7th diode form a half-wave rectifier with the 7th electrochemical capacitor.
Particularly, in the present embodiment, the parameter of each device adopting is as follows:
DC power supply Ui1:+12V;
Inverter Ui4:24V;
Inverter Ui5:48V;
Diode D1, D2, D3, D4, D6:35A/100 ℃, withstand voltage 600V;
Electrochemical capacitor E1, E2, E3, E4:680 μ F, withstand voltage 450V;
Electrochemical capacitor E5, E6:680 μ F, withstand voltage 330V;
Contrary switch S 11, S12, S21, S22, S31, S32, S41, the S42:MOSFET, 25A/100 ° of C, 600V of leading;
The present embodiment carries out work by following steps:
Under field conditions (factors), in rectification circuit, contrary lead switch all in off state for every, electrochemical capacitor E1, E2, E3, E4 are full of Ui4 and Ui5 voltage difference, and difference, for bearing, can not be charged;
If eight contrary leads and only have first contraryly while leading switch S 11 conducting in switch, direct voltage Ui4 is that the first electrochemical capacitor E1 charges by the first diode D1;
If eight contrary leads and only have the second contrary switch S 12 and the 3rd contrary while leading switch S 21 conducting of leading in switch, direct voltage Ui5 connects with the first electrochemical capacitor E1 voltages in sequence, by the second diode D2, is that the second electrochemical capacitor E2 charges;
If eight contrary leads and only have the 4th contrary switch S 22 and the 5th contrary while leading switch S 31 conducting of leading in switch, direct voltage Ui5 connects with the second electrochemical capacitor E2 voltages in sequence, by the 3rd diode D3, is that the 3rd electrochemical capacitor E3 charges;
If eight contrary leads and only have the 6th contrary switch S 32 and the 7th contrary while leading switch S 41 conducting of leading in switch, direct voltage Ui5 connects with the 3rd electrochemical capacitor E3 voltages in sequence, by the 4th diode D4, is that the 4th electrochemical capacitor E4 charges;
The 8th can not adopt against leading switch;
In freewheeling circuit, the 5th diode D5 plays afterflow effect.
Illustrate:
(1) when rear class rectification unit is worked, only otherwise affect prime rectification unit, centre is at least every one-level, and front and back level rectification unit can be worked simultaneously;
(2) in another embodiment of the present invention, in Fig. 1 of embodiment 1 in inverter circuit respectively by diode D6 and electrochemical capacitor E6, two half-wave rectifiers that diode D7 and electrochemical capacitor E7 form can be cancelled, Fig. 1 now becomes to be reduced to Fig. 2, now in inverter circuit 1, the secondary winding T1 of transformer TR1 end is directly connected with the anode of the first diode in rectification circuit, in inverter circuit 1, the secondary winding T2 of transformer TR1 end is directly and in rectification circuit second, four, six, the contrary drain electrode of leading switch of eight diodes is connected, the direct ground connection of secondary winding tap of transformer TR1 in inverter circuit 1.Now operation principle is identical with the operation principle of embodiment Fig. 1, and unique difference is: when Ui2 is positive half cycle, first against leading switch S 11 conductings, is the first electrochemical capacitor E1 charging; When Ui2+Ui3 is negative half period, then triggering in adjacent rectification unit a contrary switch of leading separately, is electrochemical capacitor charging in rear class rectification unit;
(3), in another embodiment of the present invention, can cancel the 8th contrary switch S 42 of leading.The 7th contrary switch S 41 and the 8th contrary switch S 42, the 4th diode D4 and the 4th electrochemical capacitor E4 formation the 4th rectification unit of leading of leading, last unit in embodiment mono-, now the 8th contrary lead switch S 42 can, but, after again during cascade rectification unit, the 8th contrary switch S 42 of leading must use, only have last of last unit contrary lead switch can.
The present invention is based on against leading the DC voltage booster circuit of switch: only adopt diode and electrochemical capacitor both can realize thering is the boosting of the DC power supply of different amplitudes, whole circuit is very simple, design is also uncomplicated, and be convenient to increase and decrease rectification unit progression, obtained simulation analysis and experiment preliminary identification.
Above specific embodiments of the invention are described.It will be appreciated that, the present invention is not limited to above-mentioned specific implementations, and those skilled in the art can make various distortion or modification within the scope of the claims, and this does not affect flesh and blood of the present invention.

Claims (5)

1. based on contrary, lead a DC voltage booster circuit for switch, it is characterized in that comprising rectification circuit and inverter circuit, rectification circuit is input as two-way direct voltage, exports a road direct voltage; Inverter circuit input direct voltage, by high-frequency isolation transformer and half-wave rectifier output two-way direct voltage, is the power supply of rear class rectification circuit;
Described rectification circuit comprises at least four rectification units and an afterflow unit; Wherein:
The first rectification unit comprises the first diode, the first electrochemical capacitor and first, the second contrary switch of leading, wherein the negative electrode of the first diode is connected with the anode of the second diode of the second rectification unit after being connected with the positive pole of the first electrochemical capacitor, the anode of the first diode is connected with the first DC power supply in inverter circuit, the negative pole of the first electrochemical capacitor and first contrary is led in switch MOSFET drain electrode and second against leading MOSFET source ground in switch, first against leading MOSFET source ground in switch, second is connected with the second DC power supply in inverter circuit against leading MOSFET drain electrode in switch, first against leading the built-in anti-paralleled diode of MOSFET itself in switch, second against leading the built-in anti-paralleled diode of MOSFET itself in switch,
The second rectification unit comprises the second diode, the second electrochemical capacitor and the 3rd, the 4th contrary switch of leading, wherein the negative electrode of the second diode is connected with the anode of the 3rd diode of the 3rd rectification unit after being connected with the positive pole of the second electrochemical capacitor, the negative pole of the second electrochemical capacitor and the 3rd contrary is led in switch MOSFET drain electrode and the 4th against leading MOSFET source ground in switch, the 3rd against leading MOSFET source ground in switch, the 4th is connected with the second DC power supply in inverter circuit against leading MOSFET drain electrode in switch, the 3rd against leading the built-in anti-paralleled diode of MOSFET itself in switch, the 4th against leading the built-in anti-paralleled diode of MOSFET itself in switch,
The 3rd rectification unit comprises the 3rd diode, the 3rd electrochemical capacitor and the 5th, the 6th contrary switch of leading, wherein the negative electrode of the 3rd diode is connected with the anode of the 4th diode of the 4th rectification unit after being connected with the positive pole of the 3rd electrochemical capacitor, the negative pole of the 3rd electrochemical capacitor and the 5th contrary is led in switch MOSFET drain electrode and the 6th against leading MOSFET source ground in switch, the 5th against leading MOSFET source ground in switch, the 6th is connected with the second DC power supply in inverter circuit against leading MOSFET drain electrode in switch, the 5th against leading the built-in anti-paralleled diode of MOSFET itself in switch, the 6th against leading the built-in anti-paralleled diode of MOSFET itself in switch,
The 4th rectification unit comprises the 4th diode, the 4th electrochemical capacitor and the 7th contrary switch of leading, wherein the negative electrode of the 4th diode is connected with the negative electrode of the 5th diode in afterflow unit after being connected with the positive pole of the 4th electrochemical capacitor, form output cathode, the negative pole of the 4th electrochemical capacitor is connected against leading MOSFET drain electrode in switch with the 7th, the 7th against leading MOSFET source ground in switch, and the 7th against leading the built-in anti-paralleled diode of MOSFET itself in switch;
Described afterflow unit comprises the 5th diode, and wherein the negative electrode of the 5th diode forms output cathode, its anodic formation output negative pole;
Described inverter circuit comprises the 5th electrochemical capacitor, a voltage source inverter, a high frequency transformer, the 6th diode, the 7th diode and the 6th electrochemical capacitor, the 7th electrochemical capacitor, wherein the positive pole of the 5th electrochemical capacitor is connected with negative pole with the positive pole of input the first DC power supply respectively with negative pole, and be connected with voltage source inverter input, voltage source inverter input is connected with the two ends of high frequency transformer armature winding, two secondary winding of high frequency transformer are with shared tap, tap ground connection, the first secondary winding T1 is connected with the anode of the 6th diode in rectification circuit, the positive pole of the negative electrode of the 6th diode and the 6th electrochemical capacitor is connected with the anode of the first diode in rectification circuit, after second subprime winding T2 is connected with the anode of the 7th diode D7, and be connected with another input of rectification circuit, the minus earth of the 6th electrochemical capacitor, the minus earth of the 7th electrochemical capacitor, wherein the 6th diode and the 6th electrochemical capacitor form a half-wave rectifier, and the 7th diode and the 7th electrochemical capacitor form a half-wave rectifier.
2. according to claim 1 based on the contrary DC voltage booster circuit of switch of leading, it is characterized in that described the 4th rectification unit further comprises the 8th contrary switch of leading, the negative pole of the 4th electrochemical capacitor and the 8th is against leading MOSFET grounded drain in switch, the 8th is connected with the second DC power supply in inverter circuit against leading MOSFET source electrode in switch, and the 8th against leading the built-in anti-paralleled diode of MOSFET itself in switch.
3. according to claim 1 based on the contrary DC voltage booster circuit of switch of leading, it is characterized in that in described inverter circuit respectively by the 6th diode and the 6th electrochemical capacitor, two half-wave rectifiers that the 7th diode and the 7th electrochemical capacitor form can be cancelled, now in inverter circuit, the first secondary winding T1 end of transformer is directly connected with the anode of the first diode in rectification circuit, in inverter circuit, the second subprime winding T2 of transformer end is directly and in rectification circuit second, four, six, the contrary drain electrode of leading switch of eight diodes is connected, the direct ground connection of secondary winding tap of transformer in inverter circuit.
According to described in claim 1-3 any one based on the contrary DC voltage booster circuit of switch of leading, while it is characterized in that described circuit adopts five and five above rectification units, structure and the connected mode of the 5th and above rectification unit structure of increase and connected mode and above-mentioned the second rectification unit, the 3rd rectification unit, the 4th rectification unit are identical.
5. according to leading the DC voltage booster circuit of switch based on contrary described in claim 1-3 any one, it is characterized in that when rear class rectification unit is worked, otherwise affect prime rectification unit, centre is at least every one-level, front and back level rectification unit can be worked simultaneously.
CN201310493173.7A 2013-10-18 2013-10-18 Based on the inverse DC voltage booster circuit leading switch Expired - Fee Related CN103595249B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106646311A (en) * 2016-11-25 2017-05-10 国网福建省电力有限公司 Portable high-voltage charged displayer verification device
WO2018126554A1 (en) * 2017-01-04 2018-07-12 广东百事泰电子商务股份有限公司 Smart correction wave voltage conversion circuit based on pfc, full bridge, and half bridge

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3371261A (en) * 1965-12-17 1968-02-27 Westinghouse Electric Corp Power supply control using gate pulse amplifiers
CN102064588A (en) * 2011-01-27 2011-05-18 周桂宝 Autotracking adaptive charging maintainer for electric vehicle storage battery
CN201937476U (en) * 2011-03-25 2011-08-17 盐城市贝思特电气有限公司 Dry high-power high-frequency high-voltage pulse power supply

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3371261A (en) * 1965-12-17 1968-02-27 Westinghouse Electric Corp Power supply control using gate pulse amplifiers
CN102064588A (en) * 2011-01-27 2011-05-18 周桂宝 Autotracking adaptive charging maintainer for electric vehicle storage battery
CN201937476U (en) * 2011-03-25 2011-08-17 盐城市贝思特电气有限公司 Dry high-power high-frequency high-voltage pulse power supply

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* Cited by examiner, † Cited by third party
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CN106646311A (en) * 2016-11-25 2017-05-10 国网福建省电力有限公司 Portable high-voltage charged displayer verification device
CN106646311B (en) * 2016-11-25 2023-06-16 国网福建省电力有限公司 Verification device of portable high-voltage electrified display
WO2018126554A1 (en) * 2017-01-04 2018-07-12 广东百事泰电子商务股份有限公司 Smart correction wave voltage conversion circuit based on pfc, full bridge, and half bridge

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