CN103594806A - Thin-substrate amplitude correction slot-line planar horn antenna - Google Patents
Thin-substrate amplitude correction slot-line planar horn antenna Download PDFInfo
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- CN103594806A CN103594806A CN201310616404.9A CN201310616404A CN103594806A CN 103594806 A CN103594806 A CN 103594806A CN 201310616404 A CN201310616404 A CN 201310616404A CN 103594806 A CN103594806 A CN 103594806A
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Abstract
The invention provides a thin-substrate amplitude correction slot-line planar horn antenna and relates to an antenna. The thin-substrate amplitude correction slot-line planar horn antenna comprises a micro-strip feeder line (2), a horn antenna body (3) and multiple slot-line horns (4) which are located on a dielectric substrate (1), wherein the horn antenna body (3) consists of a first metal plane (7), a second metal plane (8) and two rows of metalized via hole horn side walls (9). The horn antenna body (3) is provided with metalized via hole arrays (11) and dielectric-loaded waveguides (14), and the dielectric-loaded waveguides (14) on the caliber face (10) of the horn antenna body (3) are identical in width and respectively connected with one of the slot-line horns (4). Electromagnetic waves can reach to the slot-line horns in a constant-amplitude mode and then are radiated, and the polarization direction of a radiation field is parallel to the substrate. The thin-substrate amplitude correction slot-line planar horn antenna can be manufactured by using the thin substrate and is high in gain, low in cost and compact in structure.
Description
Technical field
The present invention relates to a kind of horn antenna, especially a kind of thin substrate amplitude correction line of rabbet joint plane horn antenna.
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Background technology
Horn antenna has a wide range of applications in the systems such as satellite communication, terrestrial microwave link and radio telescope.But the huge physical dimension of three-dimensional horn antenna has restricted its application and development in planar circuit.In recent years, the proposition of substrate integrated waveguide technology and development have well promoted the development of plane horn antenna.Substrate integration wave-guide have size little, lightweight, be easy to the advantages such as integrated and processing and fabricating.The substrate integration wave-guide plane horn antenna of the plane based on substrate integration wave-guide, except having the feature of horn antenna, has also well been realized miniaturization, the lightness of horn antenna, and has been easy to be integrated in microwave and millimeter wave planar circuit.Traditional substrate integration wave-guide plane horn antenna have a restriction, the thickness of antenna horn aperture substrate is greater than 1/10th operation wavelengths, antenna just can have good radiance, not so due to reflection, the energy emission in antenna is not gone out.So just require the thickness of antenna substrate can not be too thin, not only volume and weight be very large at L-band etc., will to meet this requirement very difficult especially, very thick substrate compared with low-frequency range, has offset integrated advantage, but also has increased cost.The polarised direction of these antenna radiation field is generally all perpendicular to medium substrate in addition, and some application needs the polarization of radiation field to be parallel to medium substrate.More existing antennas load the radiation that paster improves thin substrate plane horn antenna before plane horn antenna, but the patch size loading is larger, and working band is narrower.The gain of traditional substrate integration wave-guide plane horn antenna is relatively low in addition, and its reason is because horn mouth constantly opens, and while causing Electromagnetic Wave Propagation to horn mouth diametric plane, the amplitude distribution of electric field strength is inhomogeneous, and radiation directivity and gain reduce.The methods such as existing employing medium loading at present, medium prism, correct loudspeaker aperture field, but these methods all can only be improved the consistency of PHASE DISTRIBUTION, can not improve the uniformity of amplitude distribution, and these phase alignment structures have increased the overall structure size of antenna.
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Summary of the invention
technical problem:the object of the invention is to propose a kind of thin substrate amplitude correction line of rabbet joint plane horn antenna, the polarised direction of this radiation field of aerial is parallel with medium substrate, can use very thin medium substrate manufacture, in the situation that the electric very thin thickness of substrate, still there is good radiance, and this plane horn antenna can RECTIFYING ANTENNA bore face on electromagnetic wave amplitude distribution inconsistent.
technical scheme:thin substrate amplitude correction line of rabbet joint plane horn antenna of the present invention, is characterized in that this antenna comprises the integrated horn antenna of microstrip feed line, substrate and a plurality of line of rabbet joint loudspeaker that are arranged on medium substrate; The first port of described microstrip feed line is the input/output port of this antenna, and the second port of microstrip feed line and the integrated horn antenna of substrate join; The integrated horn antenna of substrate by be positioned at medium substrate one side the first metal flat, be positioned at the second metal flat of medium substrate another side and form with the two row's metallization via hole loudspeaker sidewalls that are connected the first metal flat and the second metal flat through medium substrate, width between two row's metallization via hole loudspeaker sidewalls of the integrated horn antenna of substrate becomes large gradually, form tubaeform dehiscing, the end of dehiscing is the bore face of the integrated horn antenna of substrate; In the integrated horn antenna of substrate, have metallization arrays of vias to connect the first metal flat and the second metal flat, the head end of metallization arrays of vias is inner at the integrated horn antenna of substrate, and the tail end of metallization arrays of vias is on the bore face of the integrated horn antenna of substrate; Adjacent two metallization arrays of vias or row's metallization via hole loudspeaker sidewall that metallization arrays of vias is adjacent, form dielectric-filled waveguide with the first metal flat and the second metal flat; On the bore face of the integrated horn antenna of substrate, the width of each dielectric-filled waveguide is equal, and outside bore face, each dielectric-filled waveguide is connected to a line of rabbet joint loudspeaker.
The conduction band of microstrip feed line and the first metal flat join, and the ground plane of microstrip feed line and the second metal flat join.
The broken line that the shape of described metallization arrays of vias consists of one or more curve, the common summit of two adjacent curve negotiatings connects, and the shape of a curve of broken line can be straight line, camber line or other curve.
The width of dielectric-filled waveguide will make electromagnetic wave can propagate therein and not be cut off.
The head end of selection metallization arrays of vias and summit, in the position of the integrated horn antenna of substrate inside, equate the electromagnetic wave power transmitting in each dielectric-filled waveguide.
Each line of rabbet joint loudspeaker has respectively the first radiation patch and the second radiation patch on the two sides that is positioned at medium substrate, the first radiation patch of line of rabbet joint loudspeaker is connected with the first metal flat of the integrated horn antenna of substrate, the second radiation patch of line of rabbet joint loudspeaker is connected with the second metal flat of the integrated horn antenna of substrate, and the hypotenuse of the hypotenuse of the first radiation patch and the second radiation patch opens gradually and forms flaring opening.
In metallization via hole loudspeaker sidewall and metallization arrays of vias, the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole loudspeaker sidewall and the metallization arrays of vias that form can be equivalent to electric wall.
Electromagnetic wave is from one end input of microstrip feed line, and the other end of process microstrip feed line enters substrate integration wave-guide horn antenna, propagates after a segment distance, runs into metallization arrays of vias, just enters respectively each dielectric-filled waveguide transmission.Enter the electromagnetic relative power of each dielectric-filled waveguide mainly by the head end broken line of metallization arrays of vias and the determining positions of polygon vertex, the head end of adjustment metallization arrays of vias and summit are in the position of the integrated horn antenna of substrate inside, can adjust the electromagnetic relative power through each dielectric-filled waveguide transmission, and then can guarantee that the power transmitting equates in each dielectric-filled waveguide, because each dielectric-filled waveguide on bore face is connected to the line of rabbet joint loudspeaker of a same caliber size, the power that enters like this each line of rabbet joint loudspeaker radiation also equates, namely guarantee that whole antenna is that constant amplitude width is penetrated, this has just improved the gain of antenna.
Just can be controlled in the above described manner the power on amplitude distribution of magnetic wave of antenna opening diametric plane, if remaining on the port width of each dielectric-filled waveguide on antenna opening diametric plane equates, and adjust the head end of metallization arrays of vias and summit in the position of the integrated horn antenna of substrate inside, make to arrive antenna opening diametric plane by the electromagnetic same width of each dielectric-filled waveguide transmission, and then enter each line of rabbet joint loudspeaker radiation with width, the polarised direction of radiation field also becomes with substrate and connects subparallel horizontal direction, so not only can be so that the in the situation that of the thin substrate of electricity, whole antenna has good radiance, and reach and improve the aperture efficiency of antenna and the object of gain.
Owing to there being a plurality of metallization arrays of vias that the bore face of antenna is divided into a lot of little bore faces, it is very little that the size of the line of rabbet joint loudspeaker that connect on each osculum diametric plane can be done, and the compact conformation of antenna, size also only increase seldom like this.
Antenna, from feed microstrip line to line of rabbet joint loudspeaker, be all the substrate integrated wave guide structure of sealing, so feeder loss is less.
In like manner also can on the bore face of antenna, realize as required specific field intensity amplitude distribution.
beneficial effect:the beneficial effect of the thin substrate amplitude correction of the present invention line of rabbet joint plane horn antenna is that the polarised direction of this radiation field of aerial is parallel with medium substrate; This antenna can use the medium substrate manufacture lower than the thickness of 2 percent wavelength, substrate thickness far below desired 1/10th wavelength of common plane horn antenna, in the situation that the electric very thin thickness of substrate, still there is good radiance, for example, in 6GHz frequency, adopt the thickness of epoxide resin material substrate to be reduced to 0.5mm by 2.5mm, thereby greatly reduce size, weight and cost; And this plane horn antenna inside be embedded with metallization arrays of vias can RECTIFYING ANTENNA bore face on electromagnetic wave amplitude distribution inconsistent, compact conformation, the feeder loss of antenna are little.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further described.
Fig. 1 is the structural representation of the thin substrate amplitude correction of the present invention line of rabbet joint plane horn antenna.
In figure, have: medium substrate 1, microstrip feed line 2, the integrated horn antenna 3 of substrate, line of rabbet joint trumpet array 4, the first port 5 of microstrip feed line 2, the second port 6 of microstrip feed line 2, the first metal flat 7 of medium substrate 1, the second metal flat 8 of medium substrate 1, metallization via hole loudspeaker sidewall 9, the bore face 10 of antenna 3, metallization arrays of vias 11, the head end 12 of metallization arrays of vias 11, the tail end 13 of metallization arrays of vias 11, dielectric-filled waveguide 14, the conduction band 15 of microstrip feed line 2, the ground plane 16 of microstrip feed line 2, summit 17, the first radiation patch 18 of line of rabbet joint loudspeaker 4, the second radiation patch 19 of line of rabbet joint loudspeaker 4, the hypotenuse 20 of the first radiation patch 18 and the hypotenuse 21 of the second radiation patch 19.
Embodiment
Embodiment of the present invention is: thin substrate amplitude correction line of rabbet joint plane horn antenna comprises the integrated horn antenna 3 of the microstrip feed line 2, the substrate that are arranged on medium substrate 1 and a plurality of line of rabbet joint loudspeaker 4; The first port 5 of described microstrip feed line 2 is input/output ports of this antenna, and the second port 6 of microstrip feed line 2 joins with the integrated horn antenna 3 of substrate; The integrated horn antenna 3 of substrate by be positioned at medium substrate 1 one side the first metal flat 7, be positioned at the second metal flat 8 of medium substrate 1 another side and two rows that are connected the first metal flat 7 and the second metal flat 8 through the medium substrate 1 via hole loudspeaker sidewalls 9 that metallize and form, width between two row's metallization via hole loudspeaker sidewalls 9 of the integrated horn antenna 3 of substrate becomes large gradually, form tubaeform dehiscing, the end of dehiscing is the bore face 10 of the integrated horn antenna 3 of substrate; In the integrated horn antenna 3 of substrate, there is metallization arrays of vias 11 to connect the first metal flat 7 and the second metal flat 8, the head end 12 of metallization arrays of vias 11 is in the integrated horn antenna of substrate 3 inside, and the tail end 13 of metallization arrays of vias 11 is on the bore face 10 of the integrated horn antenna 3 of substrate; Adjacent two metallization arrays of vias 11 or row's metallization via hole loudspeaker sidewall 9 that metallization arrays of vias 11 is adjacent, form dielectric-filled waveguide 14 with the first metal flat 7 and the second metal flat 8; On the bore face 10 of the integrated horn antenna 3 of substrate, the width of each dielectric-filled waveguide 14 is equal, and outside bore face 10, each dielectric-filled waveguide 14 is connected to a line of rabbet joint loudspeaker 4.
The conduction band 15 of microstrip feed line 2 and the first metal flat 7 join, and the ground plane 16 of microstrip feed line 2 and the second metal flat 8 join.
The broken line that the shape of described metallization arrays of vias 11 consists of one or more curve, the common summit 17 of two adjacent curve negotiatings connects, and the shape of a curve of broken line can be straight line, camber line or other curve.
The width of dielectric-filled waveguide 14 will make electromagnetic wave can propagate therein and not be cut off.
The head end 12 of selection metallization arrays of vias 11 and summit 17, in the position of the integrated horn antenna of substrate 3 inside, equate the electromagnetic wave power of transmission in each dielectric-filled waveguide 14.
Each line of rabbet joint loudspeaker 4 has respectively the first radiation patch 18 and the second radiation patch 19 on the two sides that is positioned at medium substrate 1, the first radiation patch 18 of line of rabbet joint loudspeaker 4 is connected with the first metal flat 7 of the integrated horn antenna 3 of substrate, the second radiation patch 19 of line of rabbet joint loudspeaker 4 is connected with the second metal flat 8 of the integrated horn antenna 3 of substrate, and the hypotenuse 20 of the first radiation patch 18 and the hypotenuse 21 of the second radiation patch 19 open gradually and form flaring opening.
In described metallization via hole loudspeaker sidewall 9 and metallization arrays of vias 11, the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole loudspeaker sidewall 9 and the metallization arrays of vias 11 that form can be equivalent to electric wall.
When design, in metallization arrays of vias 11, head end 12 and summit 17 relative position in the integrated horn antenna 3 of substrate is to determine that electromagnetic wave enters the principal element of the relative power size in each dielectric-filled waveguide 14.In adjusting metallization arrays of vias 11, head end 12 and summit 17 relative position in the integrated horn antenna 3 of substrate just can be the same so that enter the power of each dielectric-filled waveguide 14, because the width of each dielectric-filled waveguide 14 on antenna opening diametric plane 10 is the same, enter like this power of each line of rabbet joint loudspeaker 4 radiation too, thereby reached the object of constant amplitude radiation.
In technique, thin substrate phase amplitude is proofreaied and correct line of rabbet joint difference beam plane horn antenna both can adopt common printed circuit board (PCB) (PCB) technique, also can adopt the integrated circuit technologies such as LTCC (LTCC) technique or CMOS, Si substrate to realize.The via hole that wherein metallizes can be that hollow metal through hole can be also solid metal hole, can be also continuous metallization wall, and the shape of metal throuth hole can be circular, can be also square or other shapes.
Structurally, according to same principle, assurance dielectric-filled waveguide 15 can increase or reduce the quantity of metallization arrays of vias 11, and then change quantity and the size of line of rabbet joint loudspeaker 4, as long as can transmit half left and right that the size of dehiscing of main mould and line of rabbet joint loudspeaker 4 can reach operation wavelength.
According to the above, just can realize the present invention.
Claims (7)
1. thin substrate amplitude correction line of rabbet joint plane horn antenna, is characterized in that this antenna comprises microstrip feed line (2), the integrated horn antenna of substrate (3) and a plurality of line of rabbet joint loudspeaker (4) that are arranged on medium substrate (1); First port (5) of described microstrip feed line (2) is the input/output port of this antenna, and second port (6) of microstrip feed line (2) joins with the integrated horn antenna of substrate (3); The integrated horn antenna of substrate (3) by be positioned at medium substrate (1) one side the first metal flat (7), be positioned at second metal flat (8) of medium substrate (1) another side and two rows that are connected the first metal flat (7) and the second metal flat (8) through medium substrate (1) the via hole loudspeaker sidewalls (9) that metallize and form, width between two row's metallization via hole loudspeaker sidewalls (9) of the integrated horn antenna of substrate (3) becomes large gradually, form tubaeform dehiscing, the end of dehiscing is the bore face (10) of the integrated horn antenna of substrate (3); In the integrated horn antenna of substrate (3), there is metallization arrays of vias (11) to connect the first metal flat (7) and the second metal flat (8), the head end (12) of metallization arrays of vias (11) is in the integrated horn antenna of substrate (3) inside, and the tail end (13) of metallization arrays of vias (11) is on the bore face (10) of the integrated horn antenna of substrate (3); Adjacent two metallization arrays of vias (11) or row's metallization via hole loudspeaker sidewalls (9) that the arrays of vias (11) that metallizes is adjacent, form dielectric-filled waveguide (14) with the first metal flat (7) and the second metal flat (8); Bore face (10) at the integrated horn antenna of substrate (3) is upper, and the width of each dielectric-filled waveguide (14) is equal, and outside bore face (10), each dielectric-filled waveguide (14) is connected to a line of rabbet joint loudspeaker (4).
2. thin substrate amplitude correction line of rabbet joint plane horn antenna according to claim 1, the conduction band (15) that it is characterized in that microstrip feed line (2) joins with the first metal flat (7), and the ground plane (16) of microstrip feed line (2) joins with the second metal flat (8).
3. thin substrate amplitude correction line of rabbet joint plane horn antenna according to claim 1, the broken line that the shape of the metallization arrays of vias (11) described in it is characterized in that consists of one or more curve, the common summit (17) of two adjacent curve negotiatings connects, and the shape of a curve of broken line can be straight line, camber line or other curve.
4. according to the thin substrate amplitude correction line of rabbet joint plane horn antenna described in claim 1 or 3, it is characterized in that the width of dielectric-filled waveguide (14) will make electromagnetic wave can propagate therein and not be cut off.
5. according to the thin substrate amplitude correction line of rabbet joint plane horn antenna described in claim 1 or 3 or 4, it is characterized in that selecting the head end (12) of metallization arrays of vias (11) and summit (17) in the inner position of the integrated horn antenna of substrate (3), make the electromagnetic wave power of transmission in each dielectric-filled waveguide (14) equal.
6. thin substrate amplitude correction line of rabbet joint plane horn antenna according to claim 1, it is characterized in that each line of rabbet joint loudspeaker (4) has respectively the first radiation patch (18) and the second radiation patch (19) on the two sides that is positioned at medium substrate (1), first radiation patch (18) of line of rabbet joint loudspeaker (4) is connected with first metal flat (7) of the integrated horn antenna of substrate (3), second radiation patch (19) of line of rabbet joint loudspeaker (4) is connected with second metal flat (8) of the integrated horn antenna of substrate (3), the hypotenuse (20) of the first radiation patch (18) and the hypotenuse (21) of the second radiation patch (19) open gradually and form flaring opening.
7. thin substrate amplitude correction line of rabbet joint plane horn antenna according to claim 1, it is characterized in that in described metallization via hole loudspeaker sidewalls (9) and metallization arrays of vias (11), the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole loudspeaker sidewalls (9) and the metallization arrays of vias (11) that form can be equivalent to electric wall.
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| CN201310616404.9A CN103594806B (en) | 2013-11-29 | 2013-11-29 | Thin substrate amplitude correction slot-line planar horn antenna |
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| CN201310616404.9A CN103594806B (en) | 2013-11-29 | 2013-11-29 | Thin substrate amplitude correction slot-line planar horn antenna |
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| CN103594806B CN103594806B (en) | 2016-03-30 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106299618A (en) * | 2016-08-19 | 2017-01-04 | 四川中测微格科技有限公司 | A kind of substrate integration wave-guide plane end-fire circular polarized antenna |
| RU2762320C1 (en) * | 2020-12-21 | 2021-12-17 | Федеральное государственное автономное образовательное учреждение высшего образования "Уральский федеральный университет имени первого Президента России Б.Н. Ельцина" | Design of a curved uhf antenna array |
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| JP2002246834A (en) * | 2001-02-20 | 2002-08-30 | Denki Kogyo Co Ltd | Polarization shared antenna device |
| CN101075702A (en) * | 2007-06-19 | 2007-11-21 | 东南大学 | Printing antenna with baseplate integrated waveguide feeder |
| CN102324627A (en) * | 2011-09-06 | 2012-01-18 | 电子科技大学 | Miniaturization substrate integrated multi-beam antenna |
| CN103022716A (en) * | 2012-12-21 | 2013-04-03 | 东南大学 | Planar horn antenna for phase amplitude calibration |
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2013
- 2013-11-29 CN CN201310616404.9A patent/CN103594806B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002246834A (en) * | 2001-02-20 | 2002-08-30 | Denki Kogyo Co Ltd | Polarization shared antenna device |
| CN101075702A (en) * | 2007-06-19 | 2007-11-21 | 东南大学 | Printing antenna with baseplate integrated waveguide feeder |
| CN102324627A (en) * | 2011-09-06 | 2012-01-18 | 电子科技大学 | Miniaturization substrate integrated multi-beam antenna |
| CN103022716A (en) * | 2012-12-21 | 2013-04-03 | 东南大学 | Planar horn antenna for phase amplitude calibration |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106299618A (en) * | 2016-08-19 | 2017-01-04 | 四川中测微格科技有限公司 | A kind of substrate integration wave-guide plane end-fire circular polarized antenna |
| CN106299618B (en) * | 2016-08-19 | 2019-06-18 | 四川中测微格科技有限公司 | A kind of substrate integration wave-guide plane end-fire circular polarized antenna |
| RU2762320C1 (en) * | 2020-12-21 | 2021-12-17 | Федеральное государственное автономное образовательное учреждение высшего образования "Уральский федеральный университет имени первого Президента России Б.Н. Ельцина" | Design of a curved uhf antenna array |
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