CN103594572A - Alternating-current light-emitting device - Google Patents
Alternating-current light-emitting device Download PDFInfo
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- CN103594572A CN103594572A CN201210291556.1A CN201210291556A CN103594572A CN 103594572 A CN103594572 A CN 103594572A CN 201210291556 A CN201210291556 A CN 201210291556A CN 103594572 A CN103594572 A CN 103594572A
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- cell
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
Abstract
An alternating-current light-emitting device comprises a plurality of light-emitting units and is located on a substrate. Each light-emitting unit comprises a first light-emitting subunit, a second light-emitting subunit and a tunneling junction layer. The tunneling junction layer is located between the first light-emitting subunit and the second light-emitting subunit and is used to electrically couple the first light-emitting subunit and the second light-emitting subunit. At least one conducting layer is electrically connected with the light-emitting units so that the first light-emitting subunit and the second light-emitting subunit of the same light-emitting unit are driven by positive and negative half cycle of voltages of an alternating-current power supply and give out light by turns.
Description
Technical field
The present invention relates to a kind of AC illuminator, particularly a kind of AC illuminator that uses vertical stack epitaxial structure.
Prior art
Alternating-current light emitting diode module can directly be driven by AC power, does not need to use DC voltage changer.When positive half period, the light-emitting diode of part meeting conducting is luminous, the not conducting of light-emitting diode of another part; When negative half-cycle, the conducting situation of light-emitting diode is just contrary.
Alternating-current light emitting diode module is generally adopted plane array design, is about to all light-emitting diodes and is arranged on substrate in horizontal direction is adjacent.Due at point sometime, only there is the light-emitting diode of part to be lit, another part leaves unused, and average luminescence brightness cannot be improved, or causes the waste of circuit area.
Therefore need the AC illuminator that proposes a kind of novelty badly, in order to improve luminosity or to reduce circuit area.
Summary of the invention
In view of above-mentioned, the embodiment of the present invention proposes a kind of AC illuminator, and it uses the luminescence unit of vertical stack epitaxial structure, and uses tunnel junctions layer with the vertical adjacent epitaxial structure of electrical couplings.
According to the embodiment of the present invention, AC illuminator comprises substrate, a plurality of luminescence unit and at least one conductive layer.These luminescence units lay respectively on substrate, and each luminescence unit comprises the first luminous sub-cell, the second luminous sub-cell and tunnel junctions layer.Wherein tunnel junctions layer is between the first luminous sub-cell and the second luminous sub-cell, in order to the luminous sub-cell of electrical couplings first and the second luminous sub-cell.Conductive layer is electrically connected these luminescence units, makes the first luminous sub-cell of same luminescence unit and the second luminous sub-cell luminous in turn according to the driving of the positive and negative half-cycle voltage of AC power.
Accompanying drawing explanation
Figure 1A to Fig. 1 D shows the AC illuminator of first embodiment of the invention.
The another kind of luminescence unit of Fig. 2 illustration Figure 1A.
Fig. 3 A to Fig. 3 D shows that the parallel connection of the first embodiment is electrically connected the enforcement structure of form.
Fig. 4 A to Fig. 4 D shows the AC illuminator of second embodiment of the invention.
Fig. 5 shows the change type of second embodiment of the invention.
Reference marker inventory
100 AC illuminators
400 AC illuminators
1 luminescence unit
10 substrates
11 first luminous sub-cells
11A epitaxial structure
11B epitaxial structure
11C tunnel junctions layer
111 first doped layers
112 luminescent layers
113 second doped layers
114 electrodes
115 electrodes
12 second luminous sub-cells
121 first doped layers
122 luminescent layers
123 second doped layers
124 electrodes
125 electrodes
13 tunnel junctions layers
14 first conductive layers
15 first insulating barriers
16 second conductive layers
17 second insulating barriers
18 conductive layers
19 insulating barriers
Embodiment
Figure 1A to Fig. 1 D shows the AC illuminator 100 of first embodiment of the invention, wherein, Figure 1A and Figure 1B show respectively profile and equivalent circuit diagram when AC illuminator 100 is subject to the driving of AC power positive half period voltage, and Fig. 1 C and Fig. 1 D show respectively profile and equivalent circuit diagram when AC illuminator 100 is subject to the driving of AC power negative half-cycle voltage.
As shown in Figure 1A, AC illuminator 100 comprises six of a plurality of luminescence unit 1(icons), lay respectively on substrate 10 (crystalline form of heap of stone be formed on substrate 10 or displacement substrate and form).The first luminous sub-cell 11 that each luminescence unit 1 comprises vertical stack and the second luminous sub-cell 12, and the tunnel junctions layer 13 between the first luminous sub-cell 11 and the second luminous sub-cell 12, in order to the luminous sub-cell 11 of electrical couplings first and the second luminous sub-cell 12.
The first luminous sub-cell 11 comprises at least one epitaxial structure (being light-emitting diode), each epitaxial structure includes the first doped layer 111, luminescent layer 112 and the second doped layer 113, wherein luminescent layer 112 is between the first doped layer 111 and the second doped layer 113, and (for example the first doped layer 111 is N-shaped doping for the first doped layer 111 and the second doped layer 113 electrical contrary, the second doped layer 113, for p-type doping, can be also contrary situation).Similar situation, the second luminous sub-cell 12 comprises at least one epitaxial structure, each epitaxial structure includes the first doped layer 121, luminescent layer 122 and the second doped layer 123, wherein luminescent layer 122 is between the first doped layer 121 and the second doped layer 123, and (for example the first doped layer 121 is N-shaped doping for the first doped layer 121 and the second doped layer 123 electrical contrary, the second doped layer 123, for p-type doping, can be also contrary situation).Thus, the second doped layer 113 of the luminous sub-cell 11 of tunnel junctions layer 13 electrical couplings first and the first doped layer 121 of the second luminous sub-cell 12.
The first luminous sub-cell 11 shown in Figure 1A and the second luminous sub-cell 12 respectively comprise an epitaxial structure, yet the luminous sub-cell 12 of the first luminous sub-cell 11 or the second also can comprise a plurality of epitaxial structures, in order to reach required forward bias voltage drop or required luminosity.The another kind of luminescence unit 1 of Fig. 2 illustration Figure 1A, wherein the first luminous sub-cell 11 includes two epitaxial structure 11A and 11B, between these two epitaxial structure 11A, 11B, uses tunnel junctions layer 11C to carry out electrical couplings.
In the present embodiment, as shown in Figure 1A, between adjacent luminescence unit 1, be electrically connected with two kinds of forms.The first electric connection form is electric connection form in parallel, in order to by two adjacent luminescence unit 1(the first from left and the second from left luminescence unit as shown in Figure 1A) individual other intermediate node is electrically connected, this specification alleged " intermediate node " refers to the region of mutual electrical couplings between the first luminous sub-cell 11 and the second luminous sub-cell 12, for example the second doped layer 113 of the first luminous sub-cell 11 and the first doped layer 121 of the second luminous sub-cell 12, the relation of mutual electrical couplings by tunnel junctions layer 13.The second electric connection form is staggered (crossover) electric connection form, in order to by two adjacent luminescence unit 1(the second from left and left three luminescence units as shown in Figure 1A) all outer electrodes be electrically connected, this specification alleged " outer electrode " is to refer to the electrode contacting with the doped layer of the first/the second luminous sub-cell 11/12 the most close outside (or away from tunnel junctions layer 13).For example, the electrode 124 contacting with the second doped layer 123 of the second luminous sub-cell 12, or the electrode 114 contacting with the first doped layer 111 of the first luminous sub-cell 11.Electrode as for contacting with other doped layer, is called " internal electrode " in this manual.Above-mentioned electric connection form in parallel and staggered electric connection form are used alternatingly between adjacent luminescence unit 1, thereby form the AC illuminator in parallel 100 of the present embodiment.
Above-mentioned the first is electrically connected form (being electric connection form in parallel) following several enforcement structure.As shown in Figure 3A, the corresponding doped layer (for example the first doped layer 121 of the luminous sub-cell 12 of icon second) that uses the first conductive layer 14 that two adjacent luminescence units 1 are positioned to intermediate node gives electrical couplings.In another alternate embodiment (as shown in Figure 3 B), the first conductive layer 14 also internal electrode of the first doped layer 121 by the second adjacent luminous sub-cell 12 carries out electrical couplings.Fill with the first insulating barrier 15 in the region that is positioned at the first conductive layer 14 belows between two adjacent luminescence units 1, and its material can be polymer (polymer), ceramic material (for example silicon dioxide) or its combination in any.In an example of the present embodiment, the first insulating barrier 15 is polymer, because having preferred gap-fill characteristic, can form the structure of even thickness (there is no space).In addition, the cross sectional shape of the first conductive layer 14 and the first insulating barrier 15 is rectangle not necessarily, can be also polygonal cross section, as shown in Figure 3 C.Fig. 3 D shows that the first is electrically connected the another kind enforcement structure of form.In this enforcement structure, the corresponding doped layer (for example the second doped layer 113 of the luminous sub-cell 11 of icon first) that the first conductive layer 14 is positioned at two adjacent luminescence units 1 in intermediate node gives electrical couplings.
The enforcement structure that above-mentioned the second is electrically connected form (i.e. staggered electric connection form) as shown in Figure 1A, is used the second conductive layer 16 by two adjacent luminescence unit 1(the second from left and left three luminescence units as shown in Figure 1A) all (totally four) outer electrodes 114 and 124 be electrically connected.In addition, between the second conductive layer 16 and the sidewall of luminescence unit 1, include the second insulating barrier 17.
In an example of the present embodiment, tunnel junctions layer 13 comprises column IV element and nitrogen element, that is, the compound being formed by least one column IV element and nitrogen element, and the atomicity of this column IV element and this nitrogen element accounts for the more than 50% of the hundreds of proportions by subtraction of this tunnel junctions layer total atom.In another example of the present embodiment, tunnel junctions layer 13 can adopt low temperature (for example 400 ~ 1000 ℃) technique, and its formation temperature is less than the formation temperature of adjacent epitaxial structure (for example the first luminous sub-cell 11 and the second luminous sub-cell 12).
In another example of the present embodiment, tunnel junctions layer 13 can be a kind of defect induction (defect-induced) structure, and its defect concentration providing can be greater than the more than five times of defect concentration of the layer (that is bottom of tunnel junctions layer 13) of growing up.
In another example of the present embodiment, tunnel junctions layer 13 can be sandwich construction, and preferred thickness is less than or equal to 30 nanometers.Tunnel junctions layer 13 can be non-impurity-doped, or doping content is less than the doping content of adjacent epitaxial structure (for example the first luminous sub-cell 11 and the second luminous sub-cell 12).In another example of the present embodiment, tunnel junctions layer 13 can be doped with carbon, and its doping content is greater than 10
17atom/cubic centimetre, preferable range is 10
18~ 10
20atom/cubic centimetre.
Fig. 4 A to Fig. 4 D shows the AC illuminator 400 of second embodiment of the invention, wherein, Fig. 4 A and Fig. 4 B show respectively profile and equivalent circuit diagram when AC illuminator 400 is subject to the driving of AC power positive half period voltage, and Fig. 4 C and Fig. 4 D show respectively profile and equivalent circuit diagram when AC illuminator 400 is subject to the driving of AC power negative half-cycle voltage.
As shown in Figure 4 A, AC illuminator 400 comprises three of a plurality of luminescence unit 1(icons), lay respectively on substrate 10 (crystalline form of heap of stone be formed on substrate 10 or displacement substrate and form).The structure of each luminescence unit 1 is similar to the first embodiment, therefore uses identical element numbers, and its details repeats no more.
In the present embodiment, as shown in Figure 4 A, electric connection between adjacent luminescence unit 1 is that series/parallel is electrically connected form, in order to by luminescence unit 1(the second from left luminescence unit as shown in Figure 4 A) first and second luminous sub-cell 11 and 12 outer electrode 114 and 124 connected, then with adjacent luminescence unit 1(the first from left light unit as shown in Figure 4 A) internal electrode 125 that is positioned at intermediate node carries out in parallel.As shown in Figure 4 A, the internal electrode 125 contacting with the first doped layer 121 of the second luminous sub-cell 12 after outer electrode 114 and 124 series connection carries out parallel connection.Fig. 5 shows another kind of alternate embodiment, and the internal electrode 115 contacting with the second doped layer 113 of the first luminous sub-cell 11 after outer electrode 114 and 124 series connection carries out parallel connection.
In the present embodiment, as shown in Fig. 4 A or Fig. 5, use conductive layer 18 that the internal electrode 125 or 115 of the outer electrode of a luminescence unit 1 114,124 and adjacent luminescence unit 1 is given to electrical couplings.In other words, the mutual electrical couplings of total (only having) three electrodes (that is, two outer electrodes and an internal electrode) between adjacent luminescence unit 1.In addition, between conductive layer 18 and the sidewall of luminescence unit 1, include insulating barrier 19.
The foregoing is only the preferred embodiments of the present invention, not in order to limit protection scope of the present invention; All other do not depart from the equivalence completing under the spirit that invention discloses and changes or modify, and all should be included within the scope of the claims in the present invention book.
Claims (17)
1. an AC illuminator, comprises:
A substrate;
A plurality of luminescence units, lay respectively on this substrate, and each this luminescence unit comprises:
A first luminous sub-cell;
A second luminous sub-cell; And
A tunnel junctions layer;
Wherein this tunnel junctions layer is between this first luminous sub-cell and this second luminous sub-cell, in order to the first luminous sub-cell described in electrical couplings and described the second luminous sub-cell; And
At least one conductive layer, is electrically connected described a plurality of luminescence unit, makes the first luminous sub-cell of same described luminescence unit and the second luminous sub-cell luminous in turn according to the driving of the positive and negative half-cycle voltage of AC power.
2. AC illuminator according to claim 1, wherein said the first luminous sub-cell or described the second luminous sub-cell comprise at least one epitaxial structure, and each this epitaxial structure comprises:
First doped layer;
A luminescent layer; And
Second doped layer;
Wherein this luminescent layer is between this first doped layer and this second doped layer, and described the first doped layer is electrical contrary with described the second doped layer, thus, the second doped layer of the first luminous sub-cell and the first doped layer of described the second luminous sub-cell described in described tunnel junctions layer electrical couplings.
3. AC illuminator according to claim 2, between wherein said two adjacent luminescence units, there is the mechanism that is electrically connected in parallel, in order to described two adjacent luminescence units other intermediate node is electrically connected, wherein this intermediate node refers to the region of mutual electrical couplings between described the first luminous sub-cell and described the second luminous sub-cell.
4. AC illuminator according to claim 3, the second doped layer of the first luminous sub-cell or the first doped layer of described the second luminous sub-cell described in the district inclusion of electrical couplings that wherein said intermediate node is censured.
5. AC illuminator according to claim 3, wherein said electric connection mechanism in parallel comprises:
First conductive layer, the corresponding doped layer that described two adjacent luminescence units are positioned to described intermediate node gives electrical couplings; And
First insulating barrier, between described two adjacent luminescence units and be positioned at below described the first conductive layer.
6. AC illuminator according to claim 5, the first doped layer of the second luminous sub-cell that wherein said corresponding doped layer comprises described two adjacent luminescence units, or the second doped layer of the first luminous sub-cell of described two adjacent luminescence units.
7. AC illuminator according to claim 5, wherein said the first insulating barrier comprises polymer, ceramic material or its combination in any.
8. AC illuminator according to claim 2, between wherein said two adjacent luminescence units, there is the staggered mechanism that is electrically connected, in order to all outer electrodes of described two adjacent luminescence units are electrically connected, wherein this outer electrode refers to the electrode contacting away from the doped layer of described tunnel junctions layer with described first, second luminous sub-cell.
9. AC illuminator according to claim 8, the electrode of the second doped layer contact that wherein said outer electrode comprises described the second luminous sub-cell, or the electrode contacting with the first doped layer of described the first luminous sub-cell.
10. AC illuminator according to claim 8, wherein said staggered electric connection mechanism comprises:
Second conductive layer, is electrically connected all outer electrodes of described two adjacent luminescence units; And
Second insulating barrier, between described the second conductive layer and the sidewall of described luminescence unit.
11. AC illuminators according to claim 10, the electrode of the first doped layer contact of the first luminous sub-cell that wherein said outer electrode comprises described adjacent luminescence unit, and the electrode of the second doped layer contact of described the second luminous sub-cell.
12. AC illuminators according to claim 2, have series/parallel and are electrically connected mechanism between wherein said two adjacent luminescence units, comprise:
A conductive layer, in order to the outer electrode of first and second luminous sub-cell of some described luminescence units is connected, then the internal electrode that is positioned at intermediate node with an adjacent described luminescence unit carries out in parallel; And
An insulating barrier, between described conductive layer and the sidewall of described luminescence unit.
13. AC illuminators according to claim 12, the electrode of the first doped layer contact that the internal electrode of wherein said intermediate node comprises described the second luminous sub-cell, or the electrode of the second doped layer contact of described the first luminous sub-cell.
14. AC illuminators according to claim 1, wherein said tunnel junctions layer comprises column IV element and nitrogen element, and the atomicity of this column IV element and this nitrogen element accounts for the more than 50% of the hundreds of proportions by subtraction of described tunnel junctions layer total atom.
15. AC illuminators according to claim 1, wherein said tunnel junctions layer comprises defect inducement structure, and this defect inducement structure provides the more than five times of defect concentration of the growth face that a defect concentration is greater than described tunnel junctions layer.
16. AC illuminators according to claim 1, wherein said tunnel junctions layer comprises sandwich construction, and the thickness of this sandwich construction is less than or equal to 30 nanometers, described tunnel junctions layer is non-impurity-doped, or doping content is less than the doping content of adjacent described the first luminous sub-cell and described the second luminous sub-cell.
17. AC illuminators according to claim 1, wherein said tunnel junctions layer is doped with carbon, and the doping content of this carbon is greater than 10
17atom/cubic centimetre.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210291556.1A CN103594572B (en) | 2012-08-15 | 2012-08-15 | AC illuminator |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210291556.1A CN103594572B (en) | 2012-08-15 | 2012-08-15 | AC illuminator |
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| CN103594572A true CN103594572A (en) | 2014-02-19 |
| CN103594572B CN103594572B (en) | 2017-03-01 |
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| CN201210291556.1A Expired - Fee Related CN103594572B (en) | 2012-08-15 | 2012-08-15 | AC illuminator |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040206970A1 (en) * | 2003-04-16 | 2004-10-21 | Martin Paul S. | Alternating current light emitting device |
| CN1866532A (en) * | 2005-05-20 | 2006-11-22 | 财团法人工业技术研究院 | AC light emitting apparatus and manufacturing method thereof |
| US20080190479A1 (en) * | 2007-02-13 | 2008-08-14 | Epistar Corporation | Optoelectronical semiconductor device |
| TW200849548A (en) * | 2007-06-05 | 2008-12-16 | Lite On Technology Corp | Light emitting element, manufacturing method thereof and light emitting module using the same |
| US20110174362A1 (en) * | 2010-01-18 | 2011-07-21 | Applied Materials, Inc. | Manufacture of thin film solar cells with high conversion efficiency |
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2012
- 2012-08-15 CN CN201210291556.1A patent/CN103594572B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040206970A1 (en) * | 2003-04-16 | 2004-10-21 | Martin Paul S. | Alternating current light emitting device |
| CN1866532A (en) * | 2005-05-20 | 2006-11-22 | 财团法人工业技术研究院 | AC light emitting apparatus and manufacturing method thereof |
| US20080190479A1 (en) * | 2007-02-13 | 2008-08-14 | Epistar Corporation | Optoelectronical semiconductor device |
| TW200849548A (en) * | 2007-06-05 | 2008-12-16 | Lite On Technology Corp | Light emitting element, manufacturing method thereof and light emitting module using the same |
| US20110174362A1 (en) * | 2010-01-18 | 2011-07-21 | Applied Materials, Inc. | Manufacture of thin film solar cells with high conversion efficiency |
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| CN103594572B (en) | 2017-03-01 |
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Granted publication date: 20170301 Termination date: 20180815 |