CN103594480A - CCD pixel structure with signal charge selection function - Google Patents
CCD pixel structure with signal charge selection function Download PDFInfo
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- CN103594480A CN103594480A CN201310627833.6A CN201310627833A CN103594480A CN 103594480 A CN103594480 A CN 103594480A CN 201310627833 A CN201310627833 A CN 201310627833A CN 103594480 A CN103594480 A CN 103594480A
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Abstract
A CCD pixel structure with a signal charge selection function comprises an effective signal storage region, an invalid signal discharge region, an effective signal reading barrier, a signal dividing barrier, a light sensing region, a CCD processing unit, a signal storage region and a photosensitive region barrier. The light sensing region is connected with the signal storage region. The output end of the signal storage region is respectively connected with the effective signal reading barrier and the signal dividing barrier, the effective signal reading barrier is connected with the effective signal storage region, and the signal dividing barrier is connected with the invalid signal discharge region. The effective signal storage region is connected with the CCD processing unit through the photosensitive region barrier. An effective signal reading gate is arranged above the effective signal reading barrier, and a signal dividing grate is arranged above the signal dividing barrier. The CCD pixel structure has the technical effects that the function of the CCD pixel structure is enhanced, signals output by the light sensing region can be actively selected through the CCD pixel structure, and sensor performance is improved.
Description
Technical field
The present invention relates to a kind of charge coupled cell, relate in particular to a kind of CCD pixel structure that possesses signal charge selection function.
Background technology
The function of common CCD pixel structure is very limited, can only carry out signal collection (from photosensitive area, signal being derived) and signal and read (be about to signal and be transferred to CCD processing unit) two kinds of operations, and the signal that cannot collect CCD pixel structure is selected; In order to improve the function of CCD pixel structure, in some CCD pixel structures, also added the signal district that releases, by the signal short-board effect that district forms of releasing, unnecessary signal is released, thereby make CCD pixel structure possess certain selective power to signal, but this selection is a kind of passive selection, cannot ACTIVE CONTROL.
Summary of the invention
For the problem in background technology, the present invention proposes a kind of CCD pixel structure that possesses signal charge selection function, its structure is: described CCD pixel structure comprises that release district, useful signal of useful signal storage area, invalid signals read potential barrier, signal segmentation potential barrier, photosensitive area, CCD processing unit, signal storage area and photosensitive area potential barrier; The output of described photosensitive area is connected with the input of signal storage area; The output of signal storage area reads potential barrier inner side with useful signal respectively and signal segmentation potential barrier inner side is connected, and useful signal is read outside potential barrier and is connected with a side of useful signal storage area, is connected outside signal segmentation potential barrier with the invalid signals district that releases; The opposite side of useful signal storage area is connected with CCD processing unit by photosensitive area potential barrier; Useful signal is read potential barrier top and is provided with useful signal and reads grid, and signal segmentation potential barrier top is provided with signal segmentation grid;
When reading grid to useful signal and apply high voltage, the signal in signal storage area is read potential barrier by useful signal and is transferred to useful signal storage area, then in photosensitive area potential barrier transfers to CCD processing unit; When applying high voltage to signal segmentation grid, signal in signal storage area is transferred to the invalid signals district that releases by signal segmentation potential barrier, be transferred to the invalid signals signal in district finally released (the signal mode of releasing is same as the prior art, at the invalid signals external high voltage in district of releasing) of releasing.
In addition, ground same as the prior art, signal storage area and CCD processing unit top are provided with the polysilicon electrode of controlling use;
The principle of aforementioned schemes is: adopt after the present invention program, useful signal is read output that grid and signal segmentation grid make signal storage area and formed two passes with useful signal storage area and the invalid signals district that releases respectively, the general general knowledge of based semiconductor industry, those skilled in the art should be clear, trend by the voltage on controls metastasis grid with regard to energy control signal, when we read while applying high voltage on grid at useful signal, in signal storage area, the signal of storage will shift to useful signal storage area, when we apply high voltage on signal segmentation grid, in signal storage area, the signal of storage will shift to the invalid signals district that releases, this just makes us to read the signal that the voltage on grid and signal segmentation grid controls in CCD pixel structure and move towards by controlling useful signal, thereby CCD pixel structure is possessed signal is carried out to the ability of initiatively selecting, this " initiatively selecting " enriched the function of CCD pixel structure greatly, technical staff can need to formulate flexible and changeable control strategy according to application, and solved prior art and only can rely on the defect that short-board effect carries out passive selection.
A kind of simple application of the present invention program is as follows: to useful signal, read grid and signal segmentation grid alternately apply high voltage chronologically, and will apply high-tension sequential and CCD and control sequential and link.
In order effectively to utilize space, control device size, the present invention has also proposed following preferred version for the distributing position of each functional areas: described useful signal is read potential barrier, signal segmentation potential barrier and photosensitive area and circumferentially distributed along signal storage area.
For fear of useful signal, read grid and phase mutual interference occurs signal segmentation grid when control signal shifts, the present invention has also done following improvement: described useful signal reads potential barrier and signal segmentation potential barrier lays respectively at the left and right sides, signal storage area.
Preferably, the cross section of described signal storage area is L shaped structure, and useful signal is read potential barrier and signal segmentation potential barrier and laid respectively on L shaped structure the vertically both sides of section; The junction of described photosensitive area and signal storage area is positioned at the outer end of traversing section on L shaped structure.
Useful technique effect of the present invention is: strengthened the function of CCD pixel structure, can to the signal of photosensitive area output, carry out active by CCD pixel structure and select, improved sensor performance.
Accompanying drawing explanation
Fig. 1, principle schematic of the present invention;
The vertical view of a kind of preferred structure mode that Fig. 2, the present invention propose (has been made transparent processing by gate dielectric layer and part more than gate dielectric layer in figure, wherein, useful signal is read region that grid cover and useful signal, and to read potential barrier corresponding, the region that signal segmentation grid cover is corresponding with signal segmentation potential barrier, the T shape region that the region that polysilicon gate one covers forms with photosensitive area potential barrier and CCD processing unit is corresponding, and the region that polysilicon gate two covers is corresponding with signal storage area);
Shown in Fig. 3, Fig. 2, structure is at the cross section view of A-A ' position;
Shown in Fig. 4, Fig. 2, structure is at the cross section view of B-B ' position;
In figure, the corresponding structure of each mark is respectively: read grid 3, signal segmentation grid 4, photosensitive area 5, CCD processing unit 6, signal storage area 7, ditch resistance 8, photosensitive area potential barrier 9, useful signal and read potential barrier 10, signal segmentation potential barrier 11, polysilicon gate 1, polysilicon gate 2 13, aluminium lamination 14, substrate layer 15, gate dielectric layer 16 in release district 2, useful signal of useful signal storage area 1, invalid signals.
Embodiment
A CCD pixel structure for signal charge selection function, its structure is: described CCD pixel structure comprises that release district 2, useful signal of useful signal storage area 1, invalid signals read potential barrier 10, signal segmentation potential barrier 11, photosensitive area 5, CCD processing unit 6, signal storage area 7 and photosensitive area potential barrier 9; The output of described photosensitive area 5 is connected with the input of signal storage area 7; The output of signal storage area 7 is read potential barrier 10 inner sides with useful signal respectively and is connected with signal segmentation potential barrier 11 inner sides, useful signal is read potential barrier 10 outsides and is connected with a side of useful signal storage area 1, and signal segmentation potential barrier 11 outsides and the invalid signals district 2 that releases is connected; The opposite side of useful signal storage area 1 is connected with CCD processing unit 6 by photosensitive area potential barrier 9; Useful signal is read potential barrier 10 tops and is provided with useful signal and reads grid 3, and signal segmentation potential barrier 11 tops are provided with signal segmentation grid 4;
When reading grid 3 to useful signal and apply high voltage, the signal in signal storage area 7 is read potential barrier 10 by useful signal and is transferred to useful signal storage area 1, then in photosensitive area potential barrier 9 transfers to CCD processing unit 6; When applying high voltage to signal segmentation grid 4, the signal in signal storage area 7 is transferred to the invalid signals district 2 that releases by signal segmentation potential barrier 11, is transferred to the release signal in district 2 of invalid signals and is finally released.
Further, described useful signal is read potential barrier 10, signal segmentation potential barrier 11 and photosensitive area 5 and is circumferentially distributed along signal storage area 7.
Further, described useful signal is read potential barrier 10 and signal segmentation potential barrier 11 lays respectively at 7 left and right sides, signal storage area.
Further, the cross section of described signal storage area 7 is L shaped structure, and useful signal is read potential barrier 10 and signal segmentation potential barrier 11 and laid respectively on L shaped structure the vertically both sides of section; The junction of described photosensitive area 5 and signal storage area 7 is positioned at the outer end of traversing section on L shaped structure.
Structure of the present invention adopts the semiconductor technology of existing maturation to make, core innovative point of the present invention is to be provided with two bars transfer paths (being that useful signal is read potential barrier 10 and signal segmentation potential barrier 11) on signal storage area 7, all the other do not relate to the part of core innovative point, if any not using up part, those skilled in the art should understand with prior art.
Claims (4)
1. a CCD pixel structure that possesses signal charge selection function, is characterized in that: described CCD pixel structure comprises that release district (2), useful signal of useful signal storage area (1), invalid signals read potential barrier (10), signal segmentation potential barrier (11), photosensitive area (5), CCD processing unit (6), signal storage area (7) and photosensitive area potential barrier (9); The output of described photosensitive area (5) is connected with the input of signal storage area (7); The output of signal storage area (7) is read potential barrier (10) inner side with useful signal respectively and is connected with signal segmentation potential barrier (11) inner side, useful signal is read potential barrier (10) outside and is connected with a side of useful signal storage area (1), is connected outside signal segmentation potential barrier (11) with the invalid signals district (2) that releases; The opposite side of useful signal storage area (1) is connected with CCD processing unit (6) by photosensitive area potential barrier (9); Useful signal is read potential barrier (10) top and is provided with useful signal and reads grid (3), and signal segmentation potential barrier (11) top is provided with signal segmentation grid (4);
When reading grid (3) to useful signal and apply high voltage, the signal in signal storage area (7) is read potential barrier (10) by useful signal and is transferred to useful signal storage area (1), then in photosensitive area potential barrier (9) transfers to CCD processing unit (6); When applying high voltage to signal segmentation grid (4), the signal in signal storage area (7) is transferred to the invalid signals district (2) that releases by signal segmentation potential barrier (11), is transferred to the release signal in district (2) of invalid signals and is finally released.
2. the CCD pixel structure that possesses signal charge selection function according to claim 1, is characterized in that: described useful signal is read potential barrier (10), signal segmentation potential barrier (11) and photosensitive area (5) circumferentially distribute along signal storage area (7).
3. the CCD pixel structure that possesses signal charge selection function according to claim 2, is characterized in that: described useful signal reads potential barrier (10) and signal segmentation potential barrier (11) lays respectively at the left and right sides, signal storage area (7).
4. the CCD pixel structure that possesses signal charge selection function according to claim 3, it is characterized in that: the cross section of described signal storage area (7) is L shaped structure, useful signal is read potential barrier (10) and signal segmentation potential barrier (11) and is laid respectively on L shaped structure the vertically both sides of section; The junction of described photosensitive area (5) and signal storage area (7) is positioned at the outer end of traversing section on L shaped structure.
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| CN201310627833.6A CN103594480A (en) | 2013-12-02 | 2013-12-02 | CCD pixel structure with signal charge selection function |
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| CN1552154A (en) * | 2001-09-13 | 2004-12-01 | ������������ʽ���� | Method of driving CCD color image sensor and apparatus for inputting color image |
| JP2010232477A (en) * | 2009-03-27 | 2010-10-14 | Panasonic Corp | Solid-state imaging apparatus, solid-state imaging apparatus driving method, signal processing method of the solid-state imaging apparatus, and camera |
| CN102143330A (en) * | 2009-12-25 | 2011-08-03 | 独立行政法人日本原子力研究开发机构 | Image sensor, semiconductor device and image sensing method |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001268445A (en) * | 2000-03-15 | 2001-09-28 | Fuji Xerox Co Ltd | Photosensor and three-dimensional shape measuring device |
| CN1552154A (en) * | 2001-09-13 | 2004-12-01 | ������������ʽ���� | Method of driving CCD color image sensor and apparatus for inputting color image |
| CN1519949A (en) * | 2002-11-15 | 2004-08-11 | ������������ʽ���� | Solid shooting component and its drive method |
| JP2010232477A (en) * | 2009-03-27 | 2010-10-14 | Panasonic Corp | Solid-state imaging apparatus, solid-state imaging apparatus driving method, signal processing method of the solid-state imaging apparatus, and camera |
| CN102143330A (en) * | 2009-12-25 | 2011-08-03 | 独立行政法人日本原子力研究开发机构 | Image sensor, semiconductor device and image sensing method |
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Application publication date: 20140219 |