CN103592061B - High precision silicon micro resonant pressure transducer interface circuit - Google Patents
High precision silicon micro resonant pressure transducer interface circuit Download PDFInfo
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- CN103592061B CN103592061B CN201310291280.1A CN201310291280A CN103592061B CN 103592061 B CN103592061 B CN 103592061B CN 201310291280 A CN201310291280 A CN 201310291280A CN 103592061 B CN103592061 B CN 103592061B
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Abstract
The invention relates to a high precision silicon micro resonant pressure transducer interface circuit and belongs to the micro mechanical sensor field. High-frequency modulation signals u(t) which are outputted by trans-impedance amplifiers 6 of the circuit comprise useful signals, low frequency coupling signals are eliminated through a high pass filter 7, output signals v (t) which are acquired through a demodulator 8, a low pass filter 9 and an instrument amplifier 10 only comprise low frequency useful signals with a high signal-to-noise ratio; high frequency carrier waves vi are added to a micro resonator 4 by a carrier wave generator 1, driving signals vd which are simultaneously generated by a driving signal generator 2 are added to a resonator driving end 3 to drive the micro resonator 4 to vibrate, low frequency difference useful signals generated through vibration are modulated to high frequency signals, two difference alternation current signals outputted at detection ends 5 are converted by the two trans-impedance amplifiers 6 into voltage signals u(t); the low frequency coupling signals are eliminated through the high pass filter 7, the modulated signals are demodulated by the demodulator 8, the high frequency signals after demodulation are filtered by the low pass filter 9, and the difference useful signals are converted into single-end signals by the instrument amplifier 10 and are then amplified.
Description
Technical field
The present invention relates to a kind of high precision silicon micro resonant pressure transducer interface circuit, belong to micro mechanical sensor field.
Background technology
Silicon micro resonance type pressure sensor is the silicon micropressure sensor that current precision is the highest, the object measuring pressure is reached by the frequency change of indirect inspection micro-resonator, rate-adaptive pacemaker be as the criterion numeral export, can with computing machine direct interface, and its response is fast, bandwidth, low in energy consumption, volume is little, compact conformation.In order to measure the resonance frequency of micro-resonator, need, by certain detection/energisation mode, resonator is remained on resonant condition, conventional detection method has the detection of capacitance detecting, electric heating, piezoresistive detection etc., and corresponding motivational techniques have the excitation of static excitation, electric heating, electric magnetization etc.; Wherein static excitation capacitance detecting because of structure simple, good stability is subject to widespread use; For micro-capacitance type resonator, test side and drive end are on same silicon substrate, distance is very near each other, and resonator vibrates amplitude is less, its useful variable capacitance is generally in fF magnitude, and the coupling capacitance between driving and detection is in pF magnitude, therefore in the signal detected, with frequency coupled signal much larger than useful signal, faint useful signal is made to be difficult to effectively be detected.For head it off, can by increasing resonator vibrates amplitude, increase the distance of drive end and test side to increase useful signal, reduce coupled signal, also coupling capacitance can be reduced by the method adding shielding between drive end and test side, but these method restricted applications, signal to noise ratio (S/N ratio) is low, and coupled signal cannot be eliminated completely.
Summary of the invention
In order to overcome above defect, the present invention proposes a kind of based on carrier modulation/demodulation, can eliminate coupled signal, the silicon micro resonance type pressure sensor interface circuit that signal to noise ratio (S/N ratio) is high.
Consult Fig. 1, technical scheme of the present invention is: a kind of high precision silicon micro resonant pressure transducer interface circuit, comprises carrier generator 1, drive signal generator 2, trans-impedance amplifier 6, test side 5, Hi-pass filter 7, detuner 8, low-pass filter 9 and instrument amplifier 10; Carrier generator 1 adds high frequency carrier v on micro-resonator 4
i, drive signal generator 2 produces drive singal v simultaneously
dbeing added in resonator drive end 3 drives resonator 4 to vibrate, the low frequency difference useful signal that vibration produces is modulated onto high frequency, and two difference AC signal that test side 5 exports by two trans-impedance amplifiers 6 are transformed into voltage signal u (t)=R (C
0± Δ C) v
i+ RC
1v
d, wherein C
0for the fixed capacity of resonator and test side, Δ C is the useful electric capacity of alternation that resonator vibrates produces, C
1for the coupling capacitance of drive end and test side, R is the resistance of trans-impedance amplifier 6 cross-over connection; Hi-pass filter 7 filtering coupling low frequency signal RC
1v
d, remain with modulation signal, detuner 8 is by modulation signal demodulation, and low-pass filter 9 is by the high-frequency signal filtering after demodulation, and retain low frequency useful signal, difference useful signal is changed into single-ended signal and amplifies by instrument amplifier 10.
The course of work of the silicon micro resonance type pressure sensor interface circuit based on carrier modulation/demodulation that the present invention proposes comprises the following steps:
Step 1: drive singal signal generator 2 and carrier generator 1 act in drive end 3 resonator 4 respectively,
Drive resonator vibrates, test side 5 output current signal i (t);
Step 2:x (t) is through trans-impedance amplifier 6 output voltage signal u (t);
Step 3:u (t) outputs signal u ' (t) through Hi-pass filter 7;
Step 4:u ' (t) outputs signal h (t) through detuner 8;
Step 5:h (t) outputs signal h ' (t) through low-pass filter 9;
Step 6: two paths of differential signals h ' (t) exports v (t) through instrument amplifier 10;
The invention has the beneficial effects as follows: the output of trans-impedance amplifier 6 is high-frequency modulation signal u (t), it comprises useful signal, through Hi-pass filter 7, low frequency coupled signal is eliminated, the output signal v (t) obtained through detuner 8, low-pass filter 9, instrument amplifier 10 more only comprises low frequency useful signal, and signal to noise ratio (S/N ratio) is high.
Accompanying drawing explanation
Fig. 1 is the silicon micro resonance type pressure sensor interface circuit principle schematic that the present invention proposes.
In figure, 1-carrier generator, 2-drive signal generator, 3-sensor drive end, 4-resonator, 5-sensor test side, 6-trans-impedance amplifier, 7-Hi-pass filter, 8-detuner, 9-low-pass filter, 10-instrument amplifier.
Embodiment
The micro-resonator resonance frequency that this example adopts is under atmospheric pressure 5KHz, carrier wave is sinusoidal wave, frequency is 1MHz, amplitude 1V, drive singal is 5KHz sine voltage signal, amplitude 100mV, and the useful change electric capacity of micro-resonator and test side is 10fF, resonator and test side fixed capacity are 1pF, and drive end and test side coupling capacitance are 2pF.
The course of work of silicon micro resonance type pressure sensor interface circuit in the present embodiment, comprises the following steps:
Step one: frequency 5KHz, drive voltage signal 2 and the frequency 1MHz of amplitude 100mV, the carrier signal 1 of amplitude 1V acts on sensor drive end 3 respectively with on resonator 4, drives resonator vibrates, makes sensor test side 5 output current signal i (t);
Step 2: i (t) is through trans-impedance amplifier 6 output voltage signal u (t)=0.01sin (2 π 5000t) sin (2 π 10
6t)+10sin (2 π 10
6t)+1sin (2 π 5000t) V; Wherein 0.01sin (2 π 5000t) sin (2 π 10
6t) V includes the modulated signal with alternation capacitance signal, 10sin (2 π 10
6t) V is the carrier wave coupled signal that resonator and test side fixed capacity cause, and 1sin (2 π 5000t) V is the low frequency coupled signal that test side and drive end coupling capacitance cause;
Step 3: u (t) outputs signal u ' (t)=0.01sin (2 π 5000t) sin (2 π 10 through Hi-pass filter 7
6t)+10sin (2 π 10
6t) V; Its medium and low frequency coupled signal 1sin (2 π 5000t) V is by filtering;
Step 4: u ' (t) through detuner 8 output signal h (t)=| u ' (t) |=| 0.01sin (2 π 5000t) sin (2 π 10
6t)+10sin (2 π 10
6t) | V;
Step 5: h (t) outputs signal h ' (t)=0.01sin (2 π 5000t) V through low-pass filter 9;
Step 6: two paths of differential signals h ' (t) exports v (t)=50 [0.01sin (2 π 5000t)-(-1) 0.01sin (2 π 5000t)]=1sin (2 π 5000t) V through instrument amplifier 10.
Claims (1)
1. a high precision silicon micro resonant pressure transducer interface circuit, comprise drive signal generator (2), trans-impedance amplifier (6), test side (5), low-pass filter (9), it is characterized in that, also comprise carrier generator (1), Hi-pass filter (7), detuner (8) and instrument amplifier (10); Carrier generator (1) adds high frequency carrier v on micro-resonator (4)
i, drive signal generator (2) produces drive singal v simultaneously
dbe added in resonator drive end (3) and drive resonator (4) vibration, the low frequency difference useful signal that vibration produces is modulated onto high frequency, and two difference AC signal that test side (5) export by two trans-impedance amplifiers (6) are transformed into voltage signal u (t)=R (C
0± △ C) v
i+ RC
1v
d, wherein C
0for the fixed capacity of resonator and test side, △ C is the useful electric capacity of alternation that resonator vibrates produces, C
1for the coupling capacitance of drive end and test side, R is the resistance of trans-impedance amplifier (6) cross-over connection; Hi-pass filter (7) filtering coupling low frequency signal RC
1v
dremain with modulation signal, detuner (8) is by modulation signal demodulation, and low-pass filter (9) is by the high-frequency signal filtering after demodulation, retain low frequency useful signal, difference useful signal is changed into single-ended signal and amplifies by instrument amplifier (10).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310291280.1A CN103592061B (en) | 2013-07-12 | 2013-07-12 | High precision silicon micro resonant pressure transducer interface circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310291280.1A CN103592061B (en) | 2013-07-12 | 2013-07-12 | High precision silicon micro resonant pressure transducer interface circuit |
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| CN103592061A CN103592061A (en) | 2014-02-19 |
| CN103592061B true CN103592061B (en) | 2015-04-22 |
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| CN201310291280.1A Expired - Fee Related CN103592061B (en) | 2013-07-12 | 2013-07-12 | High precision silicon micro resonant pressure transducer interface circuit |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105021324A (en) * | 2015-07-16 | 2015-11-04 | 西安励德微系统科技有限公司 | Micro mechanical pressure sensor |
| CN114608523B (en) * | 2021-12-30 | 2023-09-15 | 西南科技大学 | High-precision and high-stability barometric height measurement system |
Citations (4)
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| US6085594A (en) * | 1998-09-04 | 2000-07-11 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High resolution and large dynamic range resonant pressure sensor based on Q-factor measurement |
| CN1277142A (en) * | 2000-07-21 | 2000-12-20 | 中国科学院上海冶金研究所 | Manufacture of integrated minuature movable silicon mechanical-structure on glass substrate |
| CN1381710A (en) * | 2002-06-07 | 2002-11-27 | 西安交通大学 | Frequency output type micromechanical dual-beam resonator with autoamtic temp compensation |
| JP3149638U (en) * | 2008-09-30 | 2009-04-09 | 和 田中 | Wig mounting quick member |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62169033U (en) * | 1986-04-10 | 1987-10-27 | ||
| JP3149638B2 (en) * | 1993-09-06 | 2001-03-26 | 横河電機株式会社 | Physical quantity conversion circuit |
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2013
- 2013-07-12 CN CN201310291280.1A patent/CN103592061B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6085594A (en) * | 1998-09-04 | 2000-07-11 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High resolution and large dynamic range resonant pressure sensor based on Q-factor measurement |
| CN1277142A (en) * | 2000-07-21 | 2000-12-20 | 中国科学院上海冶金研究所 | Manufacture of integrated minuature movable silicon mechanical-structure on glass substrate |
| CN1381710A (en) * | 2002-06-07 | 2002-11-27 | 西安交通大学 | Frequency output type micromechanical dual-beam resonator with autoamtic temp compensation |
| JP3149638U (en) * | 2008-09-30 | 2009-04-09 | 和 田中 | Wig mounting quick member |
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| Title |
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