CN103592061A - High precision silicon micro resonant pressure transducer interface circuit - Google Patents
High precision silicon micro resonant pressure transducer interface circuit Download PDFInfo
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- CN103592061A CN103592061A CN201310291280.1A CN201310291280A CN103592061A CN 103592061 A CN103592061 A CN 103592061A CN 201310291280 A CN201310291280 A CN 201310291280A CN 103592061 A CN103592061 A CN 103592061A
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Abstract
The invention relates to a high precision silicon micro resonant pressure transducer interface circuit and belongs to the micro mechanical sensor field. High-frequency modulation signals u(t) which are outputted by trans-impedance amplifiers 6 of the circuit comprise useful signals, low frequency coupling signals are eliminated through a high pass filter 7, output signals v (t) which are acquired through a demodulator 8, a low pass filter 9 and an instrument amplifier 10 only comprise low frequency useful signals with a high signal-to-noise ratio; high frequency carrier waves vi are added to a micro resonator 4 by a carrier wave generator 1, driving signals vd which are simultaneously generated by a driving signal generator 2 are added to a resonator driving end 3 to drive the micro resonator 4 to vibrate, low frequency difference useful signals generated through vibration are modulated to high frequency signals, two difference alternation current signals outputted at detection ends 5 are converted by the two trans-impedance amplifiers 6 into voltage signals u(t); the low frequency coupling signals are eliminated through the high pass filter 7, the modulated signals are demodulated by the demodulator 8, the high frequency signals after demodulation are filtered by the low pass filter 9, and the difference useful signals are converted into single-end signals by the instrument amplifier 10 and are then amplified.
Description
Technical field
The present invention relates to a kind of high precision silicon micro resonance type pressure sensor interface circuit, belong to micro mechanical sensor field.
Background technology
Silicon micro resonance type pressure sensor is the silicon micropressure sensor that current precision is the highest, by the frequency change of indirect measurement micro-resonator, reach the object of gaging pressure, frequency is exported the numeral output that is as the criterion, can with computing machine direct interface, and its response is fast, bandwidth, low in energy consumption, volume is little, compact conformation.In order to measure the resonance frequency of micro-resonator, need to detect by certain/energisation mode resonator be remained on to resonant condition, conventional detection method has capacitance detecting, electric heating detection, pressure drag detection etc., and corresponding motivational techniques have static excitation, electric heating excitation, electric magnetization etc.; Wherein static excitation capacitance detecting because of simple in structure, good stability is subject to widespread use; For micro-capacitance type resonator, test side and drive end are on same silicon substrate, distance is very near each other, and resonator vibrates amplitude is less, its useful variable capacitance is generally in fF magnitude, and drive with detect between coupling capacitance in pF magnitude, therefore in the signal of detection, with frequency coupled signal, much larger than useful signal, make faint useful signal be difficult to effectively be detected.For head it off, can be by increasing resonator vibrates amplitude, increase the distance of drive end and test side to increase useful signal, reduce coupled signal, also can reduce coupling capacitance by add the method for shielding between drive end and test side, but these method restricted applications, signal to noise ratio (S/N ratio) is low, and coupled signal cannot be eliminated completely.
Summary of the invention
In order to overcome above defect, the present invention proposes a kind of based on carrier modulation/demodulation, can eliminate coupled signal, the silicon micro resonance type pressure sensor interface circuit that signal to noise ratio (S/N ratio) is high.
Consult Fig. 1, technical scheme of the present invention is: a kind of high precision silicon micro resonance type pressure sensor interface circuit, comprises carrier generator 1, drive signal generator 2, trans-impedance amplifier 6, test side 5, Hi-pass filter 7, detuner 8, low-pass filter 9 and instrument amplifier 10; Carrier generator 1 adds high frequency carrier v on micro-resonator 4
i, drive signal generator 2 produces and drives signal v simultaneously
dbe added in resonator drive end 3 and drive resonator 4 vibrations, the low frequency difference useful signal of generation of vibration is modulated onto high frequency, and two trans-impedance amplifiers 6 are transformed into voltage signal u (t)=R (C by two difference AC signal of test side 5 outputs
0± Δ C) v
i+ RC
1v
d, C wherein
0for the fixed capacity of resonator and test side, Δ C is the useful electric capacity of alternation that resonator vibrates produces, C
1for the coupling capacitance of drive end and test side, R is the resistance of trans-impedance amplifier 6 cross-over connections; Hi-pass filter 7 filtering coupling low frequency signal RC
1v
d, remaining with modulation signal, detuner 8 is by modulation signal demodulation, and low-pass filter 9, by the high-frequency signal filtering after demodulation, retains low frequency useful signal, and instrument amplifier 10 changes into difference useful signal single-ended signal and amplifies.
The course of work of the silicon micro resonance type pressure sensor interface circuit based on carrier modulation/demodulation that the present invention proposes comprises the following steps:
Step 1: drive signal generator 2 and carrier generator 1 to act in drive end 3 resonator 4 respectively,
Drive resonator vibrates, test side 5 output current signal i (t);
Step 2:x (t) is through trans-impedance amplifier 6 output voltage signal u (t);
Step 3:u (t) through Hi-pass filter 7 output signal u ' (t);
Step 4:u ' is (t) through detuner 8 output signal h (t);
Step 5:h (t) through low-pass filter 9 output signal h ' (t);
Step 6: two paths of differential signals h ' is (t) through instrument amplifier 10 output v (t);
The invention has the beneficial effects as follows: trans-impedance amplifier 6 is output as high-frequency modulation signal u (t), it has comprised useful signal, through Hi-pass filter 7, low frequency coupled signal is eliminated, the output signal v (t) obtaining through detuner 8, low-pass filter 9, instrument amplifier 10 more only comprises low frequency useful signal, and signal to noise ratio (S/N ratio) is high.
Accompanying drawing explanation
Fig. 1 is the silicon micro resonance type pressure sensor interface circuit principle schematic that the present invention proposes.
In figure, 1-carrier generator, 2-drive signal generator, 3-sensor drive end, 4-resonator, 5-sensor test side, 6-trans-impedance amplifier, 7-Hi-pass filter, 8-detuner, 9-low-pass filter, 10-instrument amplifier.
Embodiment
The micro-resonator resonance frequency that this example adopts is under atmospheric pressure 5KHz, carrier wave is sinusoidal wave, frequency is 1MHz, amplitude 1V, driving signal is 5KHz sine voltage signal, amplitude 100mV, and the useful variation electric capacity in micro-resonator and test side is 10fF, resonator and test side fixed capacity are 1pF, and drive end and test side coupling capacitance are 2pF.
The course of work of silicon micro resonance type pressure sensor interface circuit in the present embodiment, comprises the following steps:
Step 1: frequency 5KHz, drive voltage signal 2 and the frequency 1MHz of amplitude 100mV, the carrier signal 1 of amplitude 1V acts on respectively on sensor drive end 3 and resonator 4, drives resonator vibrates, makes sensor test side 5 output current signal i (t);
Step 2: i (t) is through trans-impedance amplifier 6 output voltage signal u (t)=0.01sin (2 π 5000t) sin (2 π 10
6t)+10sin (2 π 10
6t)+1sin (2 π 5000t) V; 0.01sin (2 π 5000t) sin (2 π 10 wherein
6t) V is the modulated signal including with alternation capacitance signal, 10sin (2 π 10
6t) V is the carrier wave coupled signal that resonator and test side fixed capacity cause, 1sin (2 π 5000t) V is the low frequency coupled signal that test side and drive end coupling capacitance cause;
Step 3: u (t) through Hi-pass filter 7 output signal u ' (t)=0.01sin (2 π 5000t) sin (2 π 10
6t)+10sin (2 π 10
6t) V; Its medium and low frequency coupled signal 1sin (2 π 5000t) V is by filtering;
Step 4: u ' (t) through detuner 8 output signal h (t)=| u ' (t) |=| 0.01sin (2 π 5000t) sin (2 π 10
6t)+10sin (2 π 10
6t) | V;
Step 5: h (t) through low-pass filter 9 output signal h ' (t)=0.01sin (2 π 5000t) V;
Step 6: two paths of differential signals h ' is (t) through instrument amplifier 10 output v (t)=50[0.01sin (2 π 5000t)-(1) 0.01sin (2 π 5000t)]=1sin (2 π 5000t) V.
Claims (1)
1. a high precision silicon micro resonance type pressure sensor interface circuit, comprises carrier generator (1), drive signal generator (2), trans-impedance amplifier (6), test side (5), Hi-pass filter (7), detuner (8), low-pass filter (9) and instrument amplifier (10); Carrier generator (1) adds high frequency carrier v on micro-resonator (4)
i, drive signal generator (2) produces and drives signal v simultaneously
dbe added in resonator drive end (3) and drive resonator (4) vibration, the low frequency difference useful signal of generation of vibration is modulated onto high frequency, and two trans-impedance amplifiers (6) are transformed into voltage signal u (t)=R (C by two difference AC signal of test side (5) output
0± Δ C) v
i+ RC
1v
d, C wherein
0for the fixed capacity of resonator and test side, Δ C is the useful electric capacity of alternation that resonator vibrates produces, C
1for the coupling capacitance of drive end and test side, R is the resistance of trans-impedance amplifier (6) cross-over connection; Hi-pass filter (7) filtering coupling low frequency signal RC
1v
d, remaining with modulation signal, detuner (8) is by modulation signal demodulation, and low-pass filter (9), by the high-frequency signal filtering after demodulation, retains low frequency useful signal, and instrument amplifier (10) changes into difference useful signal single-ended signal and amplifies.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310291280.1A CN103592061B (en) | 2013-07-12 | 2013-07-12 | High precision silicon micro resonant pressure transducer interface circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310291280.1A CN103592061B (en) | 2013-07-12 | 2013-07-12 | High precision silicon micro resonant pressure transducer interface circuit |
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| Publication Number | Publication Date |
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| CN103592061A true CN103592061A (en) | 2014-02-19 |
| CN103592061B CN103592061B (en) | 2015-04-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310291280.1A Expired - Fee Related CN103592061B (en) | 2013-07-12 | 2013-07-12 | High precision silicon micro resonant pressure transducer interface circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105021324A (en) * | 2015-07-16 | 2015-11-04 | 西安励德微系统科技有限公司 | Micro mechanical pressure sensor |
| CN114608523A (en) * | 2021-12-30 | 2022-06-10 | 西南科技大学 | High-precision and high-stability air pressure height measuring system |
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| JPS62169033U (en) * | 1986-04-10 | 1987-10-27 | ||
| US6085594A (en) * | 1998-09-04 | 2000-07-11 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High resolution and large dynamic range resonant pressure sensor based on Q-factor measurement |
| CN1277142A (en) * | 2000-07-21 | 2000-12-20 | 中国科学院上海冶金研究所 | Manufacture of integrated minuature movable silicon mechanical-structure on glass substrate |
| JP3149638B2 (en) * | 1993-09-06 | 2001-03-26 | 横河電機株式会社 | Physical quantity conversion circuit |
| CN1381710A (en) * | 2002-06-07 | 2002-11-27 | 西安交通大学 | Frequency output type micromechanical dual-beam resonator with autoamtic temp compensation |
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| JP3149638U (en) * | 2008-09-30 | 2009-04-09 | 和 田中 | Wig mounting quick member |
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2013
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| JPS62169033U (en) * | 1986-04-10 | 1987-10-27 | ||
| JP3149638B2 (en) * | 1993-09-06 | 2001-03-26 | 横河電機株式会社 | Physical quantity conversion circuit |
| US6085594A (en) * | 1998-09-04 | 2000-07-11 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High resolution and large dynamic range resonant pressure sensor based on Q-factor measurement |
| CN1277142A (en) * | 2000-07-21 | 2000-12-20 | 中国科学院上海冶金研究所 | Manufacture of integrated minuature movable silicon mechanical-structure on glass substrate |
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|---|
| 张弛: "谐振式压力传感器驱动仿真研究", 《软件》, vol. 34, no. 3, 20 June 2013 (2013-06-20), pages 118 - 121 * |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105021324A (en) * | 2015-07-16 | 2015-11-04 | 西安励德微系统科技有限公司 | Micro mechanical pressure sensor |
| CN114608523A (en) * | 2021-12-30 | 2022-06-10 | 西南科技大学 | High-precision and high-stability air pressure height measuring system |
| CN114608523B (en) * | 2021-12-30 | 2023-09-15 | 西南科技大学 | High-precision and high-stability barometric height measurement system |
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| Publication number | Publication date |
|---|---|
| CN103592061B (en) | 2015-04-22 |
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Granted publication date: 20150422 Termination date: 20200712 |