CN103580677B - Drive circuit - Google Patents
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- CN103580677B CN103580677B CN201210258398.XA CN201210258398A CN103580677B CN 103580677 B CN103580677 B CN 103580677B CN 201210258398 A CN201210258398 A CN 201210258398A CN 103580677 B CN103580677 B CN 103580677B
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Abstract
A kind of drive circuit, in order to drive power MOS transistor, comprises: first drives branch road and second to drive branch road.First drives branch road to comprise: the first switch N-type metal oxide semiconductor transistor, current source and the first clamp P-type mos transistor being in series.Second drives branch road to comprise: second switch N-type metal oxide semiconductor transistor, electric current supply P-type mos transistor and the second clamp P-type mos transistor being in series.First and second switch gate of first and second switch N-type metal oxide semiconductor transistor receives switching signal and anti-phase switching signal respectively.First and second clamp gates of first and second clamp P-type mos transistor receives reference voltage.The second second clamp source electrode outputting drive voltage power grid to power MOS transistor clamping P-type mos transistor.
Description
Technical field
This disclosure relates to a kind of drives technology, and particularly to a kind of drive circuit.
Background technology
Electronic product has become as a part indispensable in modern's life.In electronic installation miscellaneous,
Need to can be applicable to the semiconductor subassembly in these devices.The characteristic of semiconductor subassembly is mainly come by the technique preparing this assembly
Determine.Owing to semiconductor subassembly is the most complicated, then its technique also changes more.Semiconductor subassembly needs multiple have difference
The transistor of characteristic (the most different operation voltages).High voltage transistor is i.e. in order to meet can be at the environment of operation with high pressure
The element designed.
In general, the voltage that high voltage transistor can bear may be up to more than 10 volts, bears with general transistor
3.3 volts or 5 volts differ greatly from.For the consideration on area and element speeds, portion of techniques is by high voltage transistor
Being designed as only source electrode and can bear high pressure with drain electrode, grid then bears the voltage (such as 5 volts) that general transistor can bear.So
And, under such design, merely in order to drive general low voltage transistor and merely in order to drive the driving electricity of high voltage transistor
Road, by thus above-mentioned high-pressure crystal tube elements cannot be driven with suitable voltage.
Therefore, how to design a new drive circuit, to drive above-mentioned high-pressure crystal tube elements, be for this industry
Problem demanding prompt solution.
Summary of the invention
Therefore, an aspect of this disclosure is to provide a kind of drive circuit, in order to drive power metal-oxide
Quasiconductor (metal-oxide semiconductor；MOS) transistor, comprises: first drives branch road and second to drive props up
Road.First drives branch road to comprise: the first switch N-type metal oxide semiconductor transistor, current source and the first clamp
(clamping) P-type mos transistor.First switch N-type metal oxide semiconductor transistor has first
Switch gate, in order to receive switching signal.First clamp P-type mos transistor has the first clamp gates,
In order to receive reference voltage, wherein the first clamp drain electrode of the first clamp P-type mos transistor is connected to the
First switch drain of one switch N-type metal oxide semiconductor transistor, the first clamp P-type mos crystal
First clamp source electrode of pipe is connected to current source.Second drives branch road to comprise: second switch N-type metal-oxide semiconductor (MOS) crystal
Pipe, electric current supply P-type mos transistor and the second clamp P-type mos transistor.The
Two switch N-type metal oxide semiconductor transistors have second switch grid, in order to receive anti-phase switching signal.Electric current supplies
Answer P-type mos transistor to have be connected to the electric current supply grid of the first clamp source electrode and be connected to first
The electric current supply source electrode of current potential.Second clamp P-type mos transistor has the second clamp gates, in order to receive
Reference voltage, wherein the second clamp drain electrode of the second clamp P-type mos transistor is connected to second switch N-type
The second switch source electrode of metal oxide semiconductor transistor, the second of the second clamp P-type mos transistor
Clamp source electrode is connected to the electric current supply drain electrode of electric current supply P-type mos transistor.Wherein the second clamp source
Pole outputting drive voltage is to the power grid of power MOS transistor.
According to this disclosure one embodiment, wherein the first current potential is positive potential.
According to another embodiment of this disclosure, wherein power MOS transistor is high-pressure metal oxidation
Thing semiconductor transistor (high voltage MOS；HVMOS).The voltage difference of driving voltage and the first current potential is less than specific voltage
Value.The minima of driving voltage is reference voltage and the threshold value of the second clamp P-type mos transistor
(threshold) sum of voltage.
According to the another embodiment of this disclosure, wherein reference voltage is the highest pressure voltage of the first current potential and power grid
Difference.
According to this disclosure another embodiment, when control signal is the first state, make the first switch N-type metal-oxide
Semiconductor transistor turns on and makes second switch N-type metal oxide semiconductor transistor close, and makes the second clamp P further
Type metal oxide semiconductor transistor turns and make driving voltage rise to close power metal-oxide semiconductor crystal
Pipe.When control signal is the second state, the first switch N-type metal oxide semiconductor transistor is made to close and make second switch
N-type metal oxide semiconductor transistor turn on, make further second clamp P-type mos transistor close with
And this driving voltage declines with conducting power metal oxide semiconductor transistor.
The another aspect of this disclosure is to provide a kind of drive circuit, in order to drive power metal-oxide semiconductor
Transistor, comprises: first drives branch road and second to drive branch road.First drives branch road to comprise: the first switch p-type burning
Thing semiconductor transistor, current source and the first clamp N-type metal oxide semiconductor transistor.First switch p-type metal oxygen
Compound semiconductor transistor has the first switch gate, in order to receive switching signal.First clamp N-type metal-oxide semiconductor (MOS)
Transistor has the first clamp gates, in order to receive reference voltage, and wherein the first clamp N-type metal oxide semiconductor transistor
The first clamp drain electrode be connected to the first switch drain of the first switch P-type mos transistor, the first clamp N
First clamp source electrode of type metal oxide semiconductor transistor is connected to current source.Second drives branch road to comprise: second switch P
Type metal oxide semiconductor transistor, electric current supply N-type metal oxide semiconductor transistor and the second clamp N-type metal
Oxide semi conductor transistor.Second switch P-type mos transistor has second switch grid, in order to receive
Anti-phase switching signal.Electric current supply N-type metal oxide semiconductor transistor has the electric current being connected to the first clamp source electrode
Supply grid and be connected to the electric current supply source electrode of the first current potential.Second clamp N-type metal oxide semiconductor transistor tool
There is the second clamp gates, in order to receive reference voltage, wherein the second pincers of the second clamp N-type metal oxide semiconductor transistor
Position drain electrode is connected to the second switch source electrode of second switch P-type mos transistor, the second clamp N-type metal oxygen
Second clamp source electrode of compound semiconductor transistor is connected to the electric current of electric current supply N-type metal oxide semiconductor transistor and supplies
Should drain.Wherein the second clamp source electrode outputting drive voltage is to the power grid of power MOS transistor.
According to this disclosure one embodiment, wherein the first current potential is nagative potential.
According to another embodiment of this disclosure, wherein power MOS transistor is high-pressure metal oxidation
Thing semiconductor transistor (high voltage MOS；HVMOS).The voltage difference of driving voltage and the first current potential is less than specific voltage
Value.The maximum of driving voltage is reference voltage and the threshold value of the second clamp P-type mos transistor
(threshold) difference of voltage.
According to the another embodiment of this disclosure, wherein reference voltage is the highest pressure voltage of the first current potential and power grid
Sum.
According to this disclosure another embodiment, when control signal is the first state, make the first switch p-type metal-oxide
Semiconductor transistor turns on and makes second switch P-type mos transistor close, and makes the second clamp N further
Type metal oxide semiconductor transistor turns and make driving voltage decline to close power metal-oxide semiconductor crystal
Pipe.When control signal is the second state, the first switch P-type mos transistor is made to close and make second switch
P-type mos transistor turns, make further second clamp N-type metal oxide semiconductor transistor close with
And make driving voltage increase with conducting power metal oxide semiconductor transistor.
The advantage applying this disclosure is the design by drive circuit, can be by order to drive power metal-oxide
The driving voltage of semiconductor transistor is limited, it is to avoid it exceedes what power MOS transistor can bear
Scope, and it is readily achieved above-mentioned purpose.
Accompanying drawing explanation
For the above and other purpose of this disclosure, feature, advantage can be become apparent with embodiment, saying of accompanying drawing
Bright as follows:
Fig. 1 is in this disclosure one embodiment, the circuit diagram of a kind of drive circuit；And
Fig. 2 is in another embodiment of this disclosure, the circuit diagram of a kind of drive circuit.
[main element symbol description]
1,2: drive circuit 10,20: the first drives branch road
100,200: current source 12,22: the second drives branch road
Detailed description of the invention
Refer to Fig. 1.Fig. 1 is in this disclosure one embodiment, the circuit diagram of a kind of drive circuit 1.Drive circuit 1 is used
To drive power metal-oxide semiconductor (metal-oxide semiconductor；MOS) transistor MP0.
In the present embodiment, power MOS transistor MP0 is that p-type high-voltage metal oxide semiconductor is brilliant
Body pipe.High voltage most (high voltage MOS；HVMOS) for high-tension crystal can be born
Pipe, in one embodiment, refers to bear to about 10 volts or above high pressure, is different from the most common pressure (such as 3.3 volts
Special or 5 volts).In some semiconductor fabrications, can produce and there is source electrode and the drain electrode that can bear high pressure, and grid is only
The power MOS transistor of small voltage (such as 5 volts) can be born.The power metal oxygen designed in this way
Compound semiconductor transistor, will be able to reach to make power MOS transistor turn on when area is less
Resistance (RDS (on)) diminishes, and reduces further up to the transmission delay making power MOS transistor and rises
Time (rising time) and the effect that fall time, (falling time) diminished.For making the power metal oxygen of the above-mentioned type
Compound semiconductor transistor can avoid when driving the voltage driven exceed grid institute can the voltage of load, need to be designed to limit
The drive circuit of the scope of driving voltage processed, to meet the demand of the power MOS transistor of this type.
Drive circuit 1 comprises: first drives branch road 10 and second to drive branch road 12.First drives branch road 10 to comprise: the
One switch N-type metal oxide semiconductor transistor MN1, current source 100 and first clamp (clamping) p-type burning
Thing semiconductor transistor MP1.
First switch N-type metal oxide semiconductor transistor MN1 has the first switch gate G11, in order to receive switch
Signal IN.First switch N-type metal oxide semiconductor transistor MN1 has more the first switch source S11, to be connected to second
Current potential VSS.
First clamp P-type mos transistor MP1 has the first clamp gates G12, in order to receive reference
Voltage Vm.Wherein, the first clamp drain D 12 of the first clamp P-type mos transistor MP1 is connected to first and opens
Close first switch drain D11 of N-type metal oxide semiconductor transistor MN1, and first clamps P-type mos
The first clamp source S 12 of transistor MP1 is connected to current source 100.
Second drives branch road 12 to comprise: second switch N-type metal oxide semiconductor transistor MN2, the second clamp p-type gold
Belong to oxide semi conductor transistor MP2 and electric current supply P-type mos transistor MP3.Second switch N-type gold
Belong to oxide semi conductor transistor MN2 and there is second switch grid G 21, in order to receive anti-phase switching signal
Electric current supply P-type mos transistor MP3 has the electric current confession being connected to the first clamp source S 12
Answer grid G 3 and be connected to the electric current supply source electrode S3 of the first current potential VGH.Second clamp P-type mos crystal
Pipe MP2 has the second clamp gates G22, in order to receive reference voltage Vm.Wherein the second clamp P-type mos is brilliant
The second clamp drain D 22 of body pipe MP2 is connected to the second switch of second switch N-type metal oxide semiconductor transistor MN2
Source S 21, the second clamp source S 22 of the second clamp P-type mos transistor MP2 is then connected to electric current and supplies
Answer the electric current supply drain D 3 of P-type mos transistor MP3.Wherein, the second clamp source S 22 output drives electricity
The power grid G0 of pressure Vp to power MOS transistor MP0.
In one embodiment, the first above-mentioned current potential VGH is positive potential, and the second current potential VSS is less than the first current potential VGH
Current potential.In one embodiment, the second current potential VSS can be earthing potential.
Therefore, when control signal IN is high state, the first switch N-type metal oxide semiconductor transistor MN1 will be made to lead
Pass to and make second switch N-type metal oxide semiconductor transistor MN2 close.First switch N-type metal-oxide semiconductor (MOS)
The conducting of transistor MN1 will make to draw the electric current that current source 100 produces, and its ability drawing electric current will be greater than current source 100
The magnitude of current produced.Therefore, the electricity of the first clamp source S 12 of the first clamp P-type mos transistor MP1
Pressure, that is control second clamp P-type mos transistor MP3 electric current supply grid G 3 voltage will therewith by
Drag down, make the second clamp P-type mos transistor MP3 conducting further.
On the other hand, after second switch N-type metal oxide semiconductor transistor MN2 closes, due to the second clamp p-type gold
Belong to oxide semi conductor transistor MP3 conducting and will provide current to electric current supply drain D 3, the therefore electricity of electric current supply drain D 3
Pressure will be gradually increasing.Owing to electric current supply drain D 3 is the second of the second clamp P-type mos transistor MP2
Clamp source S 22, therefore the voltage of electric current supply drain D 3 will make the second clamp P-type mos transistor MP2
Conducting.And the voltage of electric current supply drain D 3 is the most also for controlling the power grid of power MOS transistor MP0
The driving voltage Vp of pole G0, therefore power MOS transistor MP0 is by the voltage of electric current supply drain D 3
Rise lower closedown.
And when control signal IN is low state, will make first switch N-type metal oxide semiconductor transistor MN1 close with
And make second switch N-type metal oxide semiconductor transistor MN2 turn on.First switch N-type metal-oxide semiconductor (MOS) crystal
Pipe MN1 closes stopping drawing current source 100, therefore will make the first clamp P-type mos transistor
The voltage of the first clamp source S 12 of MP1, that is control the electric current of the second clamp P-type mos transistor MP3
The voltage of supply grid G 3 will be drawn high therewith, makes the second clamp P-type mos transistor MP3 close further
Close.
On the other hand, after second switch N-type metal oxide semiconductor transistor MN2 conducting, due to the second clamp p-type gold
Belong to oxide semi conductor transistor MP3 close, second switch N-type metal oxide semiconductor transistor MN2 will draw script by
Second clamp P-type mos transistor MP3 provides the electric current to electric current supply drain D 3, therefore electric current supply leakage
The voltage of pole D3 will be gradually reduced.Owing to electric current supply drain D 3 is the second clamp P-type mos transistor
The second clamp source S 22 of MP2, therefore the voltage of ultimate current supply drain D 3 will make the second clamp p-type metal-oxide half
Conductor transistor MP2 cannot turn on and close.
It is to be noted that, the threshold voltage such as the second clamp P-type mos transistor MP2 is Vth,
The voltage accepted due to its second clamp gates G22 is reference voltage Vm, then the voltage of electric current supply drain D 3 is being down to ginseng
Examine voltage Vm and second clamp P-type mos transistor threshold voltage vt h's and time (i.e. Vm+Vth), will make
Second clamp P-type mos transistor MP2 closes, and makes second switch N-type metal-oxide semiconductor (MOS) further
Transistor MN2 cannot draw electric current again.Therefore, electric current supply drain D 3 voltage minimum only can be down to Vm+Vth i.e. cannot again under
Fall.
The voltage of electric current supply drain D 3 is the most also for controlling the power grid of power MOS transistor MP0
The driving voltage Vp of pole G0, therefore power MOS transistor MP0 is by under the voltage of electric current supply drain D 3
Fall conducting.Due to the minimum Vm+Vth that only can be down to of voltage of electric current supply drain D 3, therefore driving voltage Vp and the first current potential
The voltage difference of VGH will be less than a particular voltage level.In the present embodiment, this particular voltage level is VGH-(Vm+Vth).
In one embodiment, the value of reference voltage Vm may be set to the highest pressure of the first current potential VGH and power grid G0
The difference of value.If the highest pressure voltage of power grid G0 is 5 volts, then the value of reference voltage Vm may be set to VGH-5.Therefore, drive
The particular voltage level that the voltage difference of galvanic electricity pressure Vp and the first current potential VGH is less than will be for VGH-(VGH-5+Vth)=5-Vth.Drive
The value of galvanic electricity pressure Vp can be clamped to less than 5 volts by the design of drive circuit 1.
Therefore, in this disclosure, drive circuit 1 in order to drive power MOS transistor MP0 is permissible
Guarantee that the value of driving voltage Vp is limited in what the power grid G0 of power MOS transistor MP0 can bear
In voltage range, and make power MOS transistor MP0 can maintain normal fortune under the driving of drive circuit 1
Make.
Refer to Fig. 2.Fig. 2 is in another embodiment of this disclosure, the circuit diagram of a kind of drive circuit 2.Drive circuit 2
In order to drive power MOS transistor MN0.Similarly, in the present embodiment, power metal-oxide is partly led
Body transistor MN0 is N-type high voltage most.
Drive circuit 2 comprises: first drives branch road 20 and second to drive branch road 22.First drives branch road 20 to comprise: the
One switch P-type mos transistor MP1, current source 200 and the first clamp P-type mos are brilliant
Body pipe MN1.
First switch P-type mos transistor MP1 has the first switch gate G11, in order to receive switch
Signal IN.First switch P-type mos transistor MP1 has more the first switch source S11, to be connected to second
Current potential VDD.
First clamp N-type metal oxide semiconductor transistor MN1 has the first clamp gates G12, in order to receive reference
Voltage Vm.Wherein, the first clamp drain D 12 of the first clamp N-type metal oxide semiconductor transistor MN1 is connected to first and opens
Close first switch drain D11 of P-type mos transistor MP1, and first clamps N-type metal-oxide semiconductor (MOS)
The first clamp source S 12 of transistor MN1 is connected to current source 200.
Second drives branch road 22 to comprise: second switch P-type mos transistor MP2, the second clamp N-type gold
Belong to oxide semi conductor transistor MN2 and electric current supply N-type metal oxide semiconductor transistor MN3.Second switch p-type gold
Belong to oxide semi conductor transistor MP2 and there is second switch grid G 21, in order to receive anti-phase switching signal
Electric current supply N-type metal oxide semiconductor transistor MN3 has the electric current confession being connected to the first clamp source S 12
Answer grid G 3 and be connected to the electric current supply source electrode S3 of the first current potential VGL.Second clamp N-type metal-oxide semiconductor (MOS) crystal
Pipe MN2 has the second clamp gates G22, in order to receive reference voltage Vm.Wherein the second clamp N-type metal-oxide semiconductor (MOS) is brilliant
The second clamp drain D 22 of body pipe MN2 is connected to the second switch of second switch P-type mos transistor MP2
Source S 21, the second clamp source S 22 of the second clamp N-type metal oxide semiconductor transistor MN2 is then connected to electric current and supplies
Answer the electric current supply drain D 3 of P-type mos transistor MN3.Wherein, the second clamp source S 22 output drives electricity
The power grid G0 of pressure Vp to power MOS transistor MN0.
In one embodiment, the first above-mentioned current potential VGL is nagative potential, and the second current potential VDD is more than the first current potential VGL
Current potential.
Therefore, when control signal IN is low state, the first switch P-type mos transistor MP1 will be made to lead
Pass to and make second switch P-type mos transistor MP2 close.First switch P-type mos
The conducting of transistor MP1 will provide big electric current, and it provides the ability of electric current to will be greater than the magnitude of current that current source 200 draws.Cause
This, the voltage of the first clamp source S 12 of the first clamp N-type metal oxide semiconductor transistor MN1, that is control the second pincers
The voltage of the electric current supply grid G 3 of position N-type metal oxide semiconductor transistor MN3 will be drawn high therewith, makes second further
Clamp N-type metal oxide semiconductor transistor MN3 conducting.
On the other hand, after second switch P-type mos transistor MP2 closes, due to the second clamp N-type gold
Belong to oxide semi conductor transistor MN3 conducting and electric current supply drain D 3 will be drawn electric current, the therefore electricity of electric current supply drain D 3
Pressure will be gradually reduced.Owing to electric current supply drain D 3 is the second of the second clamp N-type metal oxide semiconductor transistor MN2
Clamp source S 22, therefore the voltage of electric current supply drain D 3 will make the second clamp N-type metal oxide semiconductor transistor MN2
Conducting.And the voltage of electric current supply drain D 3 is the most also for controlling the power grid of power MOS transistor MN0
The driving voltage Vp of pole G0, therefore power MOS transistor MN0 is by under the voltage of electric current supply drain D 3
Fall closedown.
And when control signal IN is high state, will make first switch P-type mos transistor MP1 close with
And make second switch P-type mos transistor MP2 turn on.First switch P-type mos crystal
Stopping is supplied induced current by the closedown of pipe MP1, and makes current source 100 persistently draw electric current, therefore will make the first clamp N-type metal oxygen
The first of compound semiconductor transistor MN1 clamps the voltage of source S 12, that is control the second clamp N-type metal-oxide is partly led
The voltage of the electric current supply grid G 3 of body transistor MN3 will be pulled low therewith, make the second clamp N-type metal-oxide half further
Conductor transistor MP3 closes.
On the other hand, after second switch P-type mos transistor MP2 conducting, due to the second clamp N-type gold
Belonging to oxide semi conductor transistor MN3 to close, second switch P-type mos transistor MP2 will provide current to
Supply drain D 3, therefore the voltage of electric current supply drain D 3 will be gradually increasing.Owing to electric current supply drain D 3 is the second clamp N
The second clamp source S 22 of type metal oxide semiconductor transistor MN2, therefore the voltage of ultimate current supply drain D 3 will make
Second clamp N-type metal oxide semiconductor transistor MN2 cannot turn on and close.
It is to be noted that, the threshold voltage such as the second clamp N-type metal oxide semiconductor transistor MN2 is Vth,
The voltage accepted due to its second clamp gates G22 is reference voltage Vm, then the voltage of electric current supply drain D 3 is rising to ginseng
When examining difference (i.e. the Vm-Vth) of the threshold voltage vt h that voltage Vm and second clamps P-type mos transistor, will make
Second clamp P-type mos transistor MN2 closes, and makes second switch N-type metal-oxide semiconductor (MOS) further
Transistor MP2 cannot reoffer electric current and supply drain D 3 to electric current.Therefore, the voltage of electric current supply drain D 3 is the highest only can rise to
Vm-Vth i.e. cannot rise again.
The voltage of electric current supply drain D 3 is the most also for controlling the power grid of power MOS transistor MN0
The driving voltage Vp of pole G0, therefore power MOS transistor MN0 is by the voltage of electric current supply drain D 3
Rise lower conducting.Due to the highest Vm-Vth that only can rise to of voltage of electric current supply drain D 3, therefore driving voltage Vp and the first current potential
The voltage difference of VGH will be less than a particular voltage level.In the present embodiment, this particular voltage level is (Vm-Vth)-VGL.
In one embodiment, the value of reference voltage Vm may be set to the highest pressure of the first current potential VGL and power grid G0
The sum of value.If the highest pressure voltage of power grid G0 is 5 volts, then the value of reference voltage Vm may be set to VGL+5.Therefore, drive
The particular voltage level that the voltage difference of galvanic electricity pressure Vp and the first current potential VGH is less than will be for (VGL+5-Vth)-VGL=5-Vth.Drive
The value of galvanic electricity pressure Vp can be clamped to less than 5 volts by the design of drive circuit 1.
Therefore, in this disclosure, drive circuit 2 in order to drive power MOS transistor MN0 is permissible
Guarantee that the value of driving voltage Vp is limited in what the power grid G0 of power MOS transistor MN0 can bear
In voltage range, and make power MOS transistor MN0 can maintain normal fortune under the driving of drive circuit 2
Make.
Although this disclosure is open as above with embodiment, so it is not limited to this disclosure, this area
Technical staff, without departing from the spirit and scope of this disclosure, when being used for a variety of modifications and variations, therefore this announcement is interior
The protection domain held is when being as the criterion depending on the defined person of appended claims.
Claims (16)
1. a drive circuit, in order to drive a power MOS transistor, comprises:
One first drives branch road, comprises:
One first switch N-type metal oxide semiconductor transistor, has one first switch gate, in order to receive a switch letter
Number；
One current source；And
One first clamp P-type mos transistor, has one first clamp gates, in order to receive one with reference to electricity
Pressure, wherein one first clamp drain electrode of this first clamp P-type mos transistor is connected to this first switch N-type
One first switch drain of metal oxide semiconductor transistor, this first clamp P-type mos transistor
One first clamp source electrode is connected to this current source；And
One second drives branch road, comprises:
One second switch N-type metal oxide semiconductor transistor, has a second switch grid, opens in order to receive anti-phase this
OFF signal；
One electric current supply P-type mos transistor, has the electric current supply being connected to this first clamp source electrode
Grid and be connected to one first current potential one electric current supply source electrode；And
One second clamp P-type mos transistor, has one second clamp gates, in order to receive this reference electricity
Pressure, wherein one second clamp drain electrode of this second clamp P-type mos transistor is connected to this second switch N-type
One second switch source electrode of metal oxide semiconductor transistor, this second clamp P-type mos transistor
One second clamp source electrode is connected to an electric current supply drain electrode of this electric current supply P-type mos transistor；
Wherein this second clamp source electrode exports a driving voltage to power grid of this power MOS transistor
Pole.
2. drive circuit as claimed in claim 1, wherein this first current potential is a positive potential.
3. drive circuit as claimed in claim 1, wherein this power MOS transistor is a high-pressure metal
Oxide semi conductor transistor.
4. drive circuit as claimed in claim 3, wherein this driving voltage is special less than one with a voltage difference of this first current potential
Determine magnitude of voltage.
5. drive circuit as claimed in claim 4, wherein a minima of this driving voltage be this reference voltage and this second
The sum of one threshold voltage of clamp P-type mos transistor.
6. drive circuit as claimed in claim 5, wherein this reference voltage is this first current potential with the one of this power grid
The difference of high pressure voltage.
7. drive circuit as claimed in claim 1, is wherein one first state when control signal, makes this first switch N-type gold
Belong to oxide semi conductor transistor conducting and make this second switch N-type metal oxide semiconductor transistor close, further
Make this second clamp P-type mos transistor turns and make this driving voltage increase to close this power metal
Oxide semi conductor transistor.
8. drive circuit as claimed in claim 7, is wherein one second state when this control signal, makes this first switch N-type
Metal oxide semiconductor transistor is closed and makes this second switch N-type metal oxide semiconductor transistor turn on, and enters one
Step makes this second clamp P-type mos transistor close and makes this driving voltage decline to turn on this power gold
Belong to oxide semi conductor transistor.
9. a drive circuit, in order to drive a power MOS transistor, comprises:
One first drives branch road, comprises:
One first switch P-type mos transistor, has one first switch gate, in order to receive a switch letter
Number；
One current source；And
One first clamp N-type metal oxide semiconductor transistor, has one first clamp gates, in order to receive one with reference to electricity
Pressure, wherein one first clamp drain electrode of this first clamp N-type metal oxide semiconductor transistor is connected to this first switch p-type
One first switch drain of metal oxide semiconductor transistor, this first clamp N-type metal oxide semiconductor transistor
One first clamp source electrode is connected to this current source；And
One second drives branch road, comprises:
One second switch P-type mos transistor, has a second switch grid, opens in order to receive anti-phase this
OFF signal；
One electric current supply N-type metal oxide semiconductor transistor, has the electric current supply being connected to this first clamp source electrode
Grid and be connected to one first current potential one electric current supply source electrode；And
One second clamp N-type metal oxide semiconductor transistor, has one second clamp gates, in order to receive this reference electricity
Pressure, wherein one second clamp drain electrode of this second clamp N-type metal oxide semiconductor transistor is connected to this second switch p-type
One second switch source electrode of metal oxide semiconductor transistor, this second clamp N-type metal oxide semiconductor transistor
One second clamp source electrode is connected to an electric current supply drain electrode of this electric current supply N-type metal oxide semiconductor transistor；
Wherein this second clamp source electrode exports a driving voltage to power grid of this power MOS transistor
Pole.
10. drive circuit as claimed in claim 9, wherein this first current potential is a nagative potential.
11. drive circuits as claimed in claim 9, wherein this power MOS transistor is a high-pressure metal
Oxide semi conductor transistor.
12. drive circuits as claimed in claim 11, wherein this driving voltage and a voltage difference of this first current potential are less than one
Particular voltage level.
13. drive circuits as claimed in claim 12, wherein a maximum of this driving voltage be this reference voltage and this
The difference of one threshold voltage of two clamp N-type metal oxide semiconductor transistors.
14. drive circuits as claimed in claim 13, wherein this reference voltage is the one of this first current potential and this power grid
The sum of the highest pressure voltage.
15. drive circuits as claimed in claim 9, are wherein one first state when control signal, make this first switch p-type gold
Belong to oxide semi conductor transistor conducting and make this second switch P-type mos transistor close, further
Make this second clamp N-type metal oxide semiconductor transistor conducting and make this driving voltage decline to close this power metal
Oxide semi conductor transistor.
16. drive circuits as claimed in claim 15, are wherein one second state when this control signal, make this first switch P
Type metal oxide semiconductor transistor is closed and makes this second switch P-type mos transistor turns, enters
One step makes this second clamp N-type metal oxide semiconductor transistor close and make this driving voltage increase to turn on this power
Metal oxide semiconductor transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210258398.XA CN103580677B (en) | 2012-07-24 | 2012-07-24 | Drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210258398.XA CN103580677B (en) | 2012-07-24 | 2012-07-24 | Drive circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103580677A CN103580677A (en) | 2014-02-12 |
| CN103580677B true CN103580677B (en) | 2016-09-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210258398.XA Active CN103580677B (en) | 2012-07-24 | 2012-07-24 | Drive circuit |
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| CN (1) | CN103580677B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5065049A (en) * | 1990-08-10 | 1991-11-12 | Samsung Electronics Co., Ltd. | MOS driver circuit having clamp means to hold the output voltage constant regardless of variations in the operating voltage |
| CN1976218A (en) * | 2005-11-30 | 2007-06-06 | 飞思卡尔半导体公司 | Low voltage low power class A/B output stage |
| CN101501601A (en) * | 2005-04-28 | 2009-08-05 | 德克萨斯仪器股份有限公司 | System and method for driving a power field-effect transistor (FET) |
| CN101552593A (en) * | 2008-04-01 | 2009-10-07 | 原景科技股份有限公司 | A driving circuit to drive an output stage |
-
2012
- 2012-07-24 CN CN201210258398.XA patent/CN103580677B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5065049A (en) * | 1990-08-10 | 1991-11-12 | Samsung Electronics Co., Ltd. | MOS driver circuit having clamp means to hold the output voltage constant regardless of variations in the operating voltage |
| CN101501601A (en) * | 2005-04-28 | 2009-08-05 | 德克萨斯仪器股份有限公司 | System and method for driving a power field-effect transistor (FET) |
| CN1976218A (en) * | 2005-11-30 | 2007-06-06 | 飞思卡尔半导体公司 | Low voltage low power class A/B output stage |
| CN101552593A (en) * | 2008-04-01 | 2009-10-07 | 原景科技股份有限公司 | A driving circuit to drive an output stage |
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| CN103580677A (en) | 2014-02-12 |
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