CN103579388A - 一种含有双背场结构的太阳电池 - Google Patents
一种含有双背场结构的太阳电池 Download PDFInfo
- Publication number
- CN103579388A CN103579388A CN201310614542.3A CN201310614542A CN103579388A CN 103579388 A CN103579388 A CN 103579388A CN 201310614542 A CN201310614542 A CN 201310614542A CN 103579388 A CN103579388 A CN 103579388A
- Authority
- CN
- China
- Prior art keywords
- back surface
- solar cell
- surface field
- gainp
- adopts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052782 aluminium Inorganic materials 0.000 claims description 30
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 30
- 239000000463 material Substances 0.000 abstract description 8
- 239000002800 charge carrier Substances 0.000 abstract description 7
- 238000002161 passivation Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 230000005012 migration Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 aluminium indium phosphorus Chemical compound 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开了一种含有双背场结构的太阳电池，该太阳电池为双背场结构；基区厚度为100~500nm，双背场结构中每个背场的厚度分别为5~100nm。基区采用GaInP，双背场结构中一个背场采用Al0.13GaInP，另一个背场采用Al0.25GaInP。或者基区采用Al0.13GaInP，双背场结构中一个背场采用Al0.20GaInP，另一个背场采用采用Al0.25GaInP。本发明提供的含有双背场结构的太阳电池，能解决宽带隙太阳电池中的背场材料选择问题，提升背场的钝化效果，改善载流子的迁移率和有效寿命，为多结高效太阳电池的研制提高了保障。
Description
技术领域
本发明涉及一种太阳电池，具体地，涉及一种含有双背场结构的太阳电池。
背景技术
太阳电池因其可将太阳能直接转换为电能，是当前利用绿色能源的最有效方式之一。III-V族半导体太阳电池相较于传统的硅太阳电池，其转换效率高、抗辐照能力强、温度特性好等优点，被公认为是新一代高性能长寿命空间主电源，已在航天领域得到广泛应用。随着化合物半导体生长技术(如金属有机化合物汽相外延——MOCVD) 的不断进步，III-V族太阳电池的效率得到了很大提高，三结太阳电池效率已经超过34%。如何进一步提升III-V族太阳电池的转换效率成为当前研究热点。背场的引入在太阳电池中主要有两个作用：一是对电池的后表面形成良好的钝化层，减小载流子的复合速率；二是在一定程度上增加电池的开路电压，从而增大电池的转换效率。传统太阳电池一般选用一种材料作为背场，或者对同一材料进行两个浓度水平的掺杂。随着高效III-V族太阳电池的发展，多结太阳电池的效率已经超过34%，进一步提高电池的转换效率变得越来越困难。
传统的太阳电池一般选用一种材料来作为背场，以此来对电池后表面进行钝化，减小载流子在后表面的复合速率，并且背场的引入可以在后表面形成少数载流子的阻挡层，增加了有效少数载流子数量，提高了短路电流密度，从而提高了开路电压。图1为传统太阳电池中基区与背场的能带图。随着太阳电池所用半导体材料带隙的提高，选择符合条件的材料作为背场变得越来越困难。
发明内容
本发明的目的是提供一种太阳电池，在太阳电池中采用材料来构造新型双背场结构，降低载流子在背表面处的复合速度，同时也可以在一定程度上增大电池的开路电压。
为了达到上述目的，本发明提供了一种含有双背场结构的太阳电池，其中，该太阳电池为双背场结构；基区厚度为100~500nm，双背场结构中每个背场的厚度分别为5~100nm。
上述的含有双背场结构的太阳电池，其中，所述的基区采用GaInP，所述的双背场结构，其中一个背场采用Al0.13GaInP，另一个背场采用Al0.25GaInP。
上述的含有双背场结构的太阳电池，其中，所述的基区采用Al0.13GaInP，所述的双背场结构，其中一个背场采用Al0.20GaInP，另一个背场采用采用Al0.25GaInP。
本发明提供的含有双背场结构的太阳电池具有以下优点：
（1)可以更有效的反射少数载流子，提高短路电流密度；（2）双背场结构可以在能带中形成一个辅助电场，提高载流子的迁移率。
附图说明
图1为传统太阳电池中的基区与背场能带图。
图2为本发明的含有双背场结构的太阳电池的基区与双背场能带示意图。
图3为本发明的含有双背场结构的太阳电池的优选实施例结构示意图。
具体实施方式
以下结合附图对本发明的具体实施方式作进一步地说明。
本发明提供的含有双背场结构的太阳电池，该太阳电池为双背场结构；基区厚度为100~500nm，双背场结构中每个背场的厚度分别为5~100nm。基区与双背场能带示意图参见图2。
基区采用GaInP（镓铟磷），双背场结构，其中一个背场采用Al0.13GaInP（铝镓铟磷），另一个背场采用Al0.25GaInP。
或者基区采用Al0.13GaInP，双背场结构，其中一个背场采用Al0.20GaInP，另一个背场采用采用Al0.25GaInP。
实施例1
如图3所示，以单结太阳电池为例，首先在GaAs（砷化镓）衬底上外延生长GaAs缓冲层1，接着依次生长Al0.20GaInP背场2，Al0.25GaInP背场3，Al0.13GaInP有源层4，Al0.13GaInP发射区5，AlInP（铝铟磷）窗口层6，GaAs帽子层7。基区厚度为200nm，双背场结构中两个背场的厚度分别为10nm和50nm。该结构采用低压金属有机物化学气相沉积（LP-MOCVD）设备生长。
实施例2
以单结太阳电池为例，首先在GaAs衬底上外延生长GaAs缓冲层1，接着依次生长Al0.13GaInP背场2，Al0.25GaInP背场3， GaInP有源层4， GaInP发射区5，AlInP窗口层6，GaAs帽子层7。基基区厚度为400nm，双背场结构中两个背场的厚度分别为80nm和40nm。该结构采用低压金属有机物化学气相沉积设备生长。
本发明提供的含有双背场结构的太阳电池，在太阳电池中采用新型双背场结构，以优化电池后表面的钝化效果，并且提高电池的开路电压。利用两种背场材料带隙的差异增强背场的钝化作用，并形成增强载流子输运的飘移电场，以达到减小载流子复合速率、增大开路电压的目的。采用该结构能解决宽带隙太阳电池中的背场材料选择问题，提升背场的钝化效果，改善载流子的迁移率和有效寿命，为多结高效太阳电池的研制提高了保障。
尽管本发明的内容已经通过上述优选实施例作了详细介绍，但应当认识到上述的描述不应被认为是对本发明的限制。在本领域技术人员阅读了上述内容后，对于本发明的多种修改和替代都将是显而易见的。因此，本发明的保护范围应由所附的权利要求来限定。
Claims (3)
1.一种含有双背场结构的太阳电池，其特征在于，该太阳电池为双背场结构；基区厚度为100~500nm，双背场结构中每个背场的厚度分别为5~100nm。
2.如权利要求1所述的含有双背场结构的太阳电池，其特征在于，所述的基区采用GaInP，所述的双背场结构，其中一个背场采用Al0.13GaInP，另一个背场采用Al0.25GaInP。
3.如权利要求1所述的含有双背场结构的太阳电池，其特征在于，所述的基区采用Al0.13GaInP，所述的双背场结构，其中一个背场采用Al0.20GaInP，另一个背场采用采用Al0.25GaInP。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310614542.3A CN103579388B (zh) | 2013-11-28 | 2013-11-28 | 一种含有双背场结构的太阳电池 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310614542.3A CN103579388B (zh) | 2013-11-28 | 2013-11-28 | 一种含有双背场结构的太阳电池 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103579388A true CN103579388A (zh) | 2014-02-12 |
| CN103579388B CN103579388B (zh) | 2017-01-04 |
Family
ID=50050745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310614542.3A Active CN103579388B (zh) | 2013-11-28 | 2013-11-28 | 一种含有双背场结构的太阳电池 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103579388B (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393090A (zh) * | 2014-10-20 | 2015-03-04 | 上海空间电源研究所 | 一种含有异质结结构的宽带隙反向三结太阳电池 |
| CN111430493A (zh) * | 2020-04-03 | 2020-07-17 | 扬州乾照光电有限公司 | 一种多结太阳能电池及供电设备 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101764165A (zh) * | 2008-12-25 | 2010-06-30 | 上海空间电源研究所 | 多结砷化镓太阳电池 |
| CN102623524A (zh) * | 2012-04-06 | 2012-08-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种半导体太阳能电池及其制作方法 |
| CN103022181A (zh) * | 2011-09-22 | 2013-04-03 | 波音公司 | 太阳能电池结构中的多层背面场层 |
-
2013
- 2013-11-28 CN CN201310614542.3A patent/CN103579388B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101764165A (zh) * | 2008-12-25 | 2010-06-30 | 上海空间电源研究所 | 多结砷化镓太阳电池 |
| CN103022181A (zh) * | 2011-09-22 | 2013-04-03 | 波音公司 | 太阳能电池结构中的多层背面场层 |
| CN102623524A (zh) * | 2012-04-06 | 2012-08-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种半导体太阳能电池及其制作方法 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393090A (zh) * | 2014-10-20 | 2015-03-04 | 上海空间电源研究所 | 一种含有异质结结构的宽带隙反向三结太阳电池 |
| CN104393090B (zh) * | 2014-10-20 | 2016-08-24 | 上海空间电源研究所 | 一种含有异质结结构的宽带隙反向三结太阳电池 |
| CN111430493A (zh) * | 2020-04-03 | 2020-07-17 | 扬州乾照光电有限公司 | 一种多结太阳能电池及供电设备 |
| CN111430493B (zh) * | 2020-04-03 | 2023-06-02 | 扬州乾照光电有限公司 | 一种多结太阳能电池及供电设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103579388B (zh) | 2017-01-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102290478B (zh) | 一种p-i-n型单结InGaN太阳能电池 | |
| CN109728119B (zh) | 一种石墨烯/AlGaAs/GaAs/GaInAs多异质结太阳能电池及其制备方法 | |
| CN102969387B (zh) | GaInP/GaAs/InGaAs三结太阳能电池外延结构 | |
| CN102290493A (zh) | 一种p-i-n型单结InGaN太阳能电池的制备方法 | |
| CN102324443A (zh) | 一种倒装三结InGaN太阳能电池 | |
| CN103594540B (zh) | 一种含有界面δ掺杂的异质结太阳电池 | |
| CN111430493B (zh) | 一种多结太阳能电池及供电设备 | |
| US20160013357A1 (en) | Solar cell with delta doping layer | |
| CN103000740B (zh) | GaAs/GaInP双结太阳能电池及其制作方法 | |
| CN103579388B (zh) | 一种含有双背场结构的太阳电池 | |
| CN104916725A (zh) | 一种三结叠层太阳能电池及其制造方法 | |
| CN103633181B (zh) | 一种含有ii型异质结窗口层的太阳电池 | |
| CN102738267B (zh) | 具有超晶格结构的太阳能电池及其制备方法 | |
| CN103346190B (zh) | Si衬底的四结级联太阳能电池及其制备方法 | |
| CN105355668A (zh) | 一种具有非晶态缓冲层结构的In0.3Ga0.7As电池及制备方法 | |
| CN104241416A (zh) | 一种含量子阱结构的三结太阳能电池 | |
| CN102231402B (zh) | 一种ii-vi族稀释氧化物半导体薄膜太阳电池 | |
| CN103311354B (zh) | Si衬底三结级联太阳电池及其制作方法 | |
| CN206210825U (zh) | 一种n型氮化镓基发光二极管 | |
| CN104393090A (zh) | 一种含有异质结结构的宽带隙反向三结太阳电池 | |
| CN106129165B (zh) | 一种含有双边场助效应的异质结太阳电池 | |
| CN104347747A (zh) | 硅电池上生长氮镓铟系的三结太阳能电池 | |
| CN104779313A (zh) | 四结级联的太阳能电池及其制备方法 | |
| CN204118088U (zh) | 一种含量子阱结构的三结太阳能电池 | |
| CN108198893A (zh) | 一种氮面极性InGaN太阳能电池结构 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent of invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Lu Hongbo Inventor after: Zhang Jianqin Inventor after: Li Xinyi Inventor after: Zhang Wei Inventor after: Zhou Dayong Inventor after: Sun Lijie Inventor after: Chen Kaijian Inventor before: Lu Hongbo Inventor before: Li Xinyi Inventor before: Zhang Wei Inventor before: Zhou Dayong Inventor before: Sun Lijie Inventor before: Chen Kaijian |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: LU HONGBO LI XINYI ZHANG WEI ZHOU DAYONG SUN LIJIE CHEN KAIJIAN TO: LU HONGBO ZHANG JIANQIN LI XINYI ZHANG WEI ZHOU DAYONG SUN LIJIE CHEN KAIJIAN |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |