CN103579277B - Based on encapsulating structure and the method for packing of upside-down mounting image sensor chip - Google Patents
Based on encapsulating structure and the method for packing of upside-down mounting image sensor chip Download PDFInfo
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- CN103579277B CN103579277B CN201310563870.5A CN201310563870A CN103579277B CN 103579277 B CN103579277 B CN 103579277B CN 201310563870 A CN201310563870 A CN 201310563870A CN 103579277 B CN103579277 B CN 103579277B
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Abstract
The invention provides a kind of encapsulating structure based on upside-down mounting image sensor chip, comprise a substrate, described substrate has a saturating window, be equipped with wire structures at the front and back of substrate and be electrically connected to each other; Inverted image sensor chip is mounted on the back side of substrate by flip chip bonding mode, and the sensitive face of image sensor chip is towards saturating window; Image sensor chip with wire structures be on the whole electrically connected; Glass is fixed on the front of substrate and covers window completely; The heat sink back side being bonded in image sensor chip by thermal paste; Passive device and imageing sensor driving chip are mounted on the position beyond the saturating window of substrate front side, and are electrically connected with the wire structures in front; Substrate back wire structures region is implanted with BGA soldered ball, BGA soldered ball electrical connection wire structures.The present invention is conducive to improving assembly precision, and this encapsulating structure has better freedom from vibration and reliability, and thermal diffusivity is also good.
Description
Technical field
The present invention relates to a kind of encapsulation technology, especially a kind of encapsulating structure based on upside-down mounting image sensor chip and method for packing.
Background technology
CIS(imageing sensor traditional at present) encapsulation usually adopts the mode of wire bonding to encapsulate, have some problems, the heat dispersion of the CIS encapsulating structure such as formed is poor, have impact on the imaging performance of CIS chip, the technics comparing faced in CIS encapsulation process traditional is in addition loaded down with trivial details.And due to wire bonding mode encapsulate time; CIS chip is the thickness control problem of Heraeus and the deviation when mounting the sheet glass for the protection of CIS chip behind, and in CIS chipset process of assembling, the parallelism precision of the face, sensing unit of CIS chip between glass surface is not good.And the routing in wire bonding mode have impact on encapsulating structure freedom from vibration on the whole.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of encapsulating structure based on upside-down mounting image sensor chip and corresponding method for packing are provided, efficiently solve the problem that in heat dissipation problem and CIS chipset process of assembling, precision is not good, and relative to wire bonding mode, there is better freedom from vibration, the reliability of encapsulating structure can be improved.The technical solution used in the present invention is:
Based on an encapsulating structure for upside-down mounting image sensor chip, comprise a substrate, described substrate has a saturating window, be equipped with wire structures at the front and back of substrate and be electrically connected to each other; Inverted image sensor chip is mounted on the back side of substrate, and the sensitive face of image sensor chip is towards saturating window; Image sensor chip with wire structures be on the whole electrically connected; Glass is fixed on the front of substrate and covers window completely; The heat sink back side being fixed on image sensor chip; Passive device and imageing sensor driving chip are mounted on the position beyond the saturating window of substrate front side, and are electrically connected with the wire structures in front; Substrate back wire structures region is implanted with BGA soldered ball, BGA soldered ball electrical connection wire structures.
Preferably, described image sensor chip is mounted on the back side of substrate by flip chip bonding mode.
Further, end filler is filled with between the weld part of image sensor chip and substrate.
Further, the described heat sink back side being bonded in image sensor chip by thermal paste.
Further, described passive device is mounted on the front of substrate by surface mount process and is electrically connected with the wire structures in front.
Further, described imageing sensor driving chip is mounted on the front of substrate by flip chip bonding mode and is electrically connected with the wire structures in front.
Further, the underfill of described imageing sensor driving chip has end filler.
Described substrate can adopt organic substrate or ceramic substrate.
Present invention also offers a kind of method for packing based on upside-down mounting image sensor chip, comprise the steps:
Step one. provide substrate, open a saturating window on the substrate, the obverse and reverse of the substrate beyond saturating window is all laid wire structures and is electrically connected to each other;
Step 2. inverted image sensor chip is mounted on the back side of substrate by flip chip bonding mode, makes the sensitive face of image sensor chip towards saturating window; And make image sensor chip with wire structures be on the whole electrically connected by the soldered ball of flip chip bonding;
Step 3. between the weld part and substrate of image sensor chip, fill end filler;
Step 4. glass be arranged on the front of substrate and cover window completely;
Step 5. the position attachment passive device beyond the saturating window of substrate front side and imageing sensor driving chip; Passive device and imageing sensor driving chip are electrically connected with the wire structures of substrate front side;
Step 6. plant BGA soldered ball by planting ball technique in substrate back wire structures region, BGA soldered ball electrical connection wire structures;
Step 7. by the heat sink back side being bonded in image sensor chip by thermal paste; Encapsulating structure based on upside-down mounting image sensor chip is formed.
Further, in described step 5, passive device is mounted on the front of substrate by surface mount process and is electrically connected with the wire structures in front;
Imageing sensor driving chip adopts flip chip bonding mode be mounted on the front of substrate and be electrically connected with the wire structures in front; Filler at the bottom of the underfill of imageing sensor driving chip.
Advantage of the present invention is as follows:
1) have employed micro-assembling that the better Flip Chip Bond Technique of precision carries out image sensor chip, better control the assembly precision in an assembling process of image sensor chip.
2) encapsulating structure has better freedom from vibration and reliability.
3) be heat sinkly fixed on the image sensor chip back side and exposed outside encapsulating structure, be very beneficial to heat radiation.
Accompanying drawing explanation
Fig. 1 is substrate and saturating window schematic diagram.
Fig. 2 is attachment image sensor chip schematic diagram.
Fig. 3 fills out schematic diagram at the bottom of image sensor chip.
Fig. 4 is mounting glass schematic diagram.
Fig. 5 is attachment passive device and imageing sensor driving chip schematic diagram.
Fig. 6 is for planting BGA ball schematic diagram.
Fig. 7 is the bonding heat sink schematic diagram in the image sensor chip back side.
Fig. 8 is sensor-packaging structure and test board connection diagram.
Embodiment
Below in conjunction with concrete drawings and Examples, the invention will be further described.
As shown in Fig. 1 ~ Fig. 7: a kind of encapsulating structure based on upside-down mounting image sensor chip, comprise a substrate 1, described substrate 1 has a saturating window 3, be equipped with wire structures 2 at the front and back of substrate 1 and be electrically connected to each other; Inverted image sensor chip 4 is mounted on the back side of substrate 1, and the sensitive face of image sensor chip 4 is towards saturating window 3; Image sensor chip 4 with wire structures 2 be on the whole electrically connected; Glass 5 is fixed on the front of substrate 1 and covers window 3 completely; Heat sink 10 are bonded in the back side of image sensor chip 4 by thermal paste 11; Passive device 7 and imageing sensor driving chip 8 are mounted on the position beyond the saturating window 3 in substrate 1 front, and are electrically connected with the wire structures 2 in front; Substrate 1 back wiring structure 2 region is implanted with BGA soldered ball 9, BGA soldered ball 9 and is electrically connected wire structures 2.
Image sensor chip 4 is mounted on the back side of substrate 1 preferably by flip chip bonding mode.End filler 6 can also be filled further between the weld part and substrate 1 of image sensor chip 4.
Described passive device 7 can pass through surface mount process (SMT) and is mounted on the front of substrate 1 and is electrically connected with the wire structures 2 in front.
Described imageing sensor driving chip 8 can be mounted on the front of substrate 1 by flip chip bonding mode and be electrically connected with the wire structures 2 in front.Further, the underfill of described imageing sensor driving chip 8 has end filler 6.
Introduce the method for packing based on upside-down mounting image sensor chip below in detail, specifically comprise the steps:
Step one. as shown in Figure 1, provide substrate 1, described substrate 1 is opened a saturating window 3, and the obverse and reverse of the substrate 1 beyond saturating window 3 is all laid wire structures 2 and is electrically connected to each other;
Substrate 1 can adopt organic substrate or ceramic substrate.After saturating window 3 can make to mount in subsequent step and get well image sensor chip 4, the sensitive face of image sensor chip 4 can obtain external information.Lay wire structures 2 and can adopt method of the prior art, the wire structures 2 in the every one side of substrate can be one deck or two-layer more than.Wire structures 2 is distributed in the position beyond window 3.Via can be beaten on substrate 1, and in via, fill conductive metal material be electrically connected to make the wire structures 2 of substrate 1 front and back.Wire structures 2 region of substrate 1 is designed with the pad being conducive to assembling chip and passive device in addition.
Step 2. as shown in Figure 2, inverted image sensor chip 4 is mounted on the back side of substrate 1 by flip chip bonding mode, makes the sensitive face of image sensor chip 4 towards saturating window 3; And make image sensor chip 4 with wire structures 2 be on the whole electrically connected by the soldered ball of flip chip bonding;
In this step, by flip chip bonding mode, image sensor chip 4 is mounted on the back side of substrate 1, the weld part of image sensor chip 4 is connected with the pad at position outside the saturating window 3 in substrate 1 back side by the soldered ball of flip chip bonding, and then electrical connection wire structures 2; Soldered ball during flip chip bonding can keep the depth of parallelism between whole image sensor chip 4 and base plan well, this high consistency mainly carrying out the soldered ball of soldered ball after reflux technique on whole in the process of welding because of soldered ball on pad is higher, thus can control the depth of parallelism between the sensitive face of image sensor chip 4 and base plan.Therefore the assembly precision of image sensor chip 4 is higher.
Step 3. as shown in Figure 3, between the weld part and substrate 1 of image sensor chip 4, fill end filler 6;
End filler 6 can play protection and further fixation to the welding region of image sensor chip 4.
Step 4. as shown in Figure 4, glass 5 be arranged on the front of substrate 1 and cover window 3 completely;
Can at substrate 1 front fluting with fixing glass 5.Glass 5 can be protected the sensitive face of image sensor chip 4, avoids the pollution to sensitive face in technical process below.And after glass 5 has been installed, in the actual use of imageing sensor, also can avoid polluting the sensitive face of image sensor chip 4 or damaging.
Application upside-down mounting mode mounts image sensor chip can improve the depth of parallelism after attachment glass between glass and image sensor chip, improves image sensor performance.
Step 5. as shown in Figure 5, the position attachment passive device 7 beyond the saturating window 3 in substrate 1 front and imageing sensor driving chip 8; Passive device 7 and imageing sensor driving chip 8 are electrically connected with the wire structures 2 of substrate front side;
Wherein, passive device 7 can pass through surface mount process (SMT) and is mounted on the front of substrate 1 and is electrically connected with the wire structures 2 in front.SMT technique can make the installation of passive device 7 relatively firmly and assemble compact.
Imageing sensor driving chip 8 can adopt flip chip bonding mode be mounted on the front of substrate 1 and be electrically connected with the wire structures 2 in front.When imageing sensor driving chip 8 adopts flip chip bonding mode, can filler 6 at the bottom of the underfill of imageing sensor driving chip 8 further.
Step 6. as shown in Figure 6, plant BGA soldered ball 9, BGA soldered ball 9 in substrate 1 back wiring structure 2 region be electrically connected wire structures 2 by planting ball technique;
Step 7. as shown in Figure 7, be bonded in the back side of image sensor chip 4 by thermal paste 11 by heat sink 10; Encapsulating structure based on upside-down mounting image sensor chip is formed.
Thermal paste 11 can adopt TIM heat-conducting glue, is conducive to heat transfer.Heat sink 10 materials that can adopt metal material or other high thermal conductivity.Heat sink 10 exposed outside encapsulating structure, form reasonable thermal dissipating path, be very beneficial to heat radiation.
Finally, if desired this encapsulating structure is tested, then can as shown in Figure 8, this encapsulating structure be directly installed on test board by BGA soldered ball.Test board can be opened a cavity, to hold heat sink 10.
Claims (3)
1. based on a method for packing for upside-down mounting image sensor chip, it is characterized in that, comprise the steps:
Step one. substrate (1) is provided, described substrate (1) is opened a saturating window (3), and the obverse and reverse of the substrate (1) beyond saturating window (3) is all laid wire structures (2) and is electrically connected to each other;
Step 2. inverted image sensor chip (4) is mounted on the back side of substrate (1) by flip chip bonding mode, makes the sensitive face of image sensor chip (4) towards saturating window (3); And make image sensor chip (4) with wire structures (2) be on the whole electrically connected by the soldered ball of flip chip bonding;
Step 3. between the weld part and substrate (1) of image sensor chip (4), fill end filler (6);
Step 4. glass (5) be arranged on the front of substrate (1) and cover window (3) completely;
Step 5. position attachment passive device (7) beyond the saturating window in substrate (1) front (3) and imageing sensor driving chip (8); Passive device (7) and imageing sensor driving chip (8) are electrically connected with the wire structures (2) of substrate front side;
Step 6. plant BGA soldered ball (9) by planting ball technique in substrate (1) back wiring structure (2) region, BGA soldered ball (9) electrical connection wire structures (2);
Step 7. heat sink (10) are bonded in the back side of image sensor chip (4) by thermal paste (11); Encapsulating structure based on upside-down mounting image sensor chip is formed.
2., as claimed in claim 1 based on the method for packing of upside-down mounting image sensor chip, it is characterized in that:
In described step 5, passive device (7) is mounted on the front of substrate (1) by surface mount process and is electrically connected with the wire structures (2) in front.
3., as claimed in claim 1 based on the method for packing of upside-down mounting image sensor chip, it is characterized in that:
Described imageing sensor driving chip (8) adopts flip chip bonding mode be mounted on the front of substrate (1) and be electrically connected with the wire structures (2) in front; Filler (6) at the bottom of the underfill of imageing sensor driving chip (8).
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| CN103579277B true CN103579277B (en) | 2016-02-03 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1476065A (en) * | 2003-05-15 | 2004-02-18 | 王鸿仁 | Image sensor packaging method |
| CN1542983A (en) * | 2003-04-28 | 2004-11-03 | ���µ�����ҵ��ʽ���� | Method for producing solid-state imaging device |
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| TW459355B (en) * | 2000-12-14 | 2001-10-11 | Kingpak Tech Inc | Packaging structure of image sensor and method thereof |
| US20040089927A1 (en) * | 2002-11-12 | 2004-05-13 | Tu Hsiu Wen | Modularized image sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1542983A (en) * | 2003-04-28 | 2004-11-03 | ���µ�����ҵ��ʽ���� | Method for producing solid-state imaging device |
| CN1476065A (en) * | 2003-05-15 | 2004-02-18 | 王鸿仁 | Image sensor packaging method |
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