CN103579217B - Power module packaged in ultra-small mode and packaging method thereof - Google Patents
Power module packaged in ultra-small mode and packaging method thereof Download PDFInfo
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- CN103579217B CN103579217B CN201310550475.3A CN201310550475A CN103579217B CN 103579217 B CN103579217 B CN 103579217B CN 201310550475 A CN201310550475 A CN 201310550475A CN 103579217 B CN103579217 B CN 103579217B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Abstract
The invention discloses a power module packaged in an ultra-small mode and a packaging method thereof. A power management chip, a Schottky diode chip, a chip inductor and a chip capacitor are directly pasted to a substrate, a power conversion circuit is solidified to the power module, ceramic or aluminum substrate does not need to be used as a carrier, and a copper metal frame is directly used as a circuit carrier (substrate). The substrate has the advantage of shielding and reducing noise, so that power output has small ripple waves, the power module is convenient to install, and the size of the power module is reduced. In addition, epoxy resin filling and packaging are adopted to ensure that a chip is isolated from the outside world, water vapor and the like are prevented from entering the power module, and the power module is firm and easy to store, and has the better heat dispersion performance.
Description
Technical field
The present invention relates to power module technical field and in particular to a kind of have higher power output, extra small volume,
The power module of less ripple, the present invention also relates to a kind of method for packing of the power module of extra small encapsulation.
Background technology
At present, due to common power module using pottery or aluminium substrate as the underlying carrier building circuit（Substrate）, base
The components and parts of packaged finished product are welded on piece, outside adopts metal sealing or plastic mold technique again, leads to common power again
The volume ratio of module is larger, and conversion efficiency is low, easily generates heat, and cost of manufacture is high, and application value is relatively low.
Content of the invention
The technical problem to be solved is to provide for shortcoming of the prior art a kind of to have higher work(
Rate output, the power module of the extra small encapsulation of extra small volume, less ripple.
Another technical problem to be solved by this invention is to provide a kind of method for packing of the power module of extra small encapsulation.
Technical problem for solving the present invention adopts the following technical scheme that：
A kind of power module of extra small encapsulation, including substrate, described substrate is copper, whole surface nickel plating, described substrate
It is divided into Ith area and IIth area, described Ith area is provided with circular hole, described I area's substrate thickness is 1MM ± 0.1, described II area's substrate thickness is
0.3MM ± 0.1, described Ith area and IIth area connect the step forming 0.7MM ± 0.2, and described II divides into a area, b area, c area, described
C divides into A end, B end, C-terminal and D end, and power management chip is arranged in a area, and Schottky diode chip is arranged in b area,
Input capacitance one end is arranged in a area, and the input capacitance other end is arranged on the A end in c area, and output capacitance one end is arranged on c area
C-terminal on, the output capacitance other end is arranged on the D end in c area, and inductance one end is arranged on the B end in c area, the inductance other end pacify
It is contained on the D end in c area, described power management chip is respectively communicated with input capacitance and inductance, described inductance and Schottky two pole
Die connects, and described substrate is installed power management chip, Schottky diode chip, input capacitance, output capacitance and electricity
The region epoxy resin encapsulated of sense.
The pad of described power management chip and Schottky diode chip is all silver-plated.
Described power management chip is LM25XX series of power managing chip.
Described Schottky diode chip is 1N58XX series Schottky diode chip.
Described inductance is 47UF chip inductor, and described input and output capacitors are 220UF patch capacitor.
A kind of method for packing of the power module of extra small encapsulation, its step is：
A, substrate designs：Described substrate is copper, whole surface nickel plating, and described substrate is divided into Ith area and IIth area, described Ith area
It is provided with circular hole, described I area's substrate thickness is 1MM ± 0.1, described II area's substrate thickness is 0.3MM ± 0.1, described Ith area and II
Area connects the step forming 0.7MM ± 0.2, and described II divides into a area, b area, c area, and described c divides into A end, B end, C-terminal and D
End；
B, initially with 270 degree of high temperature soldering paste between the A end in substrate a area and c area bonding input capacitance, in substrate c
Bonding output capacitance between the D end in the C-terminal in area and c area, bonding inductance between the B end and the D end in c area in substrate c area, reflow welding
Cross furnace rear adopt 230 degree of low temperature soldering paste in substrate a area bonding power management chip and in substrate b area bonding Schottky two
After pole pipe chip, reflow welding crosses stove again；
C, pressure welding is carried out to power management chip and Xiao Te diode using spun gold, first the substrate heating of bonding device is arrived
85-90 degree, then uses pad and the input capacitance pad of spun gold source of welding current managing chip, with the management of the spun gold source of welding current
The pad of chip and the pad of inductance, finally weld the pad of inductance and the welding of Schottky diode chip with spun gold
Point；
D, by substrate embedding good for pressure welding, direct embedding is molded using plastic packaging material, the good substrate of pressure welding is put in mould,
Then epoxy resin is heated to 180-200 degree, after being cooled to room temperature after pouring mould into, opens mould.
The pad of described power management chip and Schottky diode chip is all silver-plated.
Described gold thread is 25uM gold thread.
The present invention is directly bonded in base using power management chip, Schottky diode chip, chip inductor, patch capacitor
On piece, power converting circuit is solidified into power module, gives up current pottery or aluminium substrate as carrier, and directly adopt copper
Metal framework is as circuit carrier（Substrate）, the structure of this substrate should have the characteristics that shielding, noise reduction, both can guarantee that power supply exported
There is less ripple, can be easily installed again, and reduce the volume of power module.Using the embedding of epoxy resin, this embedding should
Ensure that bare chip is hedged off from the outer world, prevent steam etc. from entering, and firmly easily deposit, also there is preferable heat dispersion.
Brief description
Fig. 1 is the substrate structure schematic diagram of the present invention；
Fig. 2 is scheme of installation of the present invention；
Fig. 3 is the T area pressure welding line graph of the present invention；
Fig. 4 is embedding schematic diagram of the present invention.
Specific embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings：
A kind of power module of extra small encapsulation, including substrate, described substrate is copper, whole surface nickel plating, substrate structure
As shown in figure 1, substrate is divided into I area 1 and IIth area, I area 1 is provided with circular hole 8, and Ith area 1 substrate thickness is 1MM ± 0.1, II area's substrate
Thickness is 0.3MM ± 0.1, and I area 1 and IIth area connect the step forming 0.7MM ± 0.2, and II divides into a area 21, b area 22, c area
23, wherein c area 23 is divided into A end 231, B end 232, C-terminal 233 and D end 234.As shown in Figure 2 and Figure 3, power management chip 3 is installed
In a area 21, Schottky diode chip 5 is arranged in b area 22, and input capacitance 4 one end is arranged in a area 21, input capacitance 4
The other end is arranged on the A end 231 in c area 23, and output capacitance 7 one end is arranged in the C-terminal 233 in c area 23, and output capacitance 7 is another
End is arranged on the D end 234 in c area 23, and inductance 6 one end is arranged on the B end 232 in c area 23, and inductance 6 other end is arranged on c area 23
D end 234 on, described power management chip 3 is respectively communicated with input capacitance 4 and inductance 6, inductance 6 and Schottky diode core
Piece 5 connects, and the pad of wherein power management chip 3 and Schottky diode chip 5 is all silver-plated.Power management chip 3 is
LM25XX series of power managing chip.Schottky diode chip 5 is 1N58XX series Schottky diode chip.Inductance 6 is
47UF chip inductor, input capacitance 4 and output capacitance 7 are 220UF patch capacitor.As shown in figure 4, power supply pipe is installed on substrate
Reason chip 3, Schottky diode chip 5, the region epoxy resin encapsulated of input capacitance 4, output capacitance 7 and inductance 6.
The basic functional principle of the power module of extra small encapsulation is that input power makes power management chip start working,
Produce power square wave signal, Switching Power Supply is formed by inductance, input capacitance, output capacitance and Schottky diode chip
Effect, therefore, this power module has all characteristics of Switching Power Supply, its output by inductance and, input capacitance, output capacitance big
Little decision, is output as the power supply of burning voltage.
Embodiment 1
A kind of method for packing of the power module of extra small encapsulation, its step is：
A, substrate designs：A kind of power module of extra small encapsulation, including substrate, described substrate is copper, and whole surface is plated
Nickel, as shown in figure 1, substrate is divided into I area 1 and IIth area, I area 1 is provided with circular hole 8 to substrate structure, and Ith area 1 substrate thickness is 1MM, II
Area's substrate thickness is 0.3MM, and I area 1 and IIth area connect the step forming 0.7MM, and II divides into a area 21, b area 22, c area 23, its
Middle c area 23 is divided into A end 231, B end 232, C-terminal 233 and D end 234.
B, initially with 270 degree of high temperature soldering paste between substrate a area 21 and the A end 231 in c area 23 bonding input capacitance 4,
Input capacitance 4 is 220UF patch capacitor.Bonding output capacitance 7 between the C-terminal 233 in substrate c area 23 and the D end 234 in c area 23,
Electric capacity 7 is 220UF patch capacitor.Bonding inductance 6 between the B end 232 and the D end 234 in c area 23 in substrate c area 23, inductance 6 is
47UF chip inductor, is that reflow welding is crossed furnace rear and adopted 230 degree of low temperature soldering paste bonding power management chip 3 in substrate a area 21
With after bonding Schottky diode chip 5 in substrate b area 22 again reflow welding cross stove；Wherein power management chip 3 is
LM25XX series of power managing chip, Schottky diode chip 5 is 1N58XX series Schottky diode chip.Power management
The pad of chip 3 and Schottky diode chip 5 is all silver-plated.
C, pressure welding is carried out to power management chip and Xiao Te diode using 25uM gold thread spun gold, first by the base of bonding device
Piece is heated to 85 degree, then uses pad and input capacitance 4 pad of spun gold source of welding current managing chip 3, is welded with spun gold
The pad of power management chip 3 and the pad of inductance 6, finally weld pad and Schottky two pole of inductance 6 with spun gold
The pad of die 5.
D, by substrate embedding good for pressure welding, direct embedding is molded using plastic packaging material, the good substrate of pressure welding is put in mould,
Then epoxy resin is heated to 180 degree, after being cooled to room temperature after pouring mould into, opens mould.
Embodiment 2
A kind of method for packing of the power module of extra small encapsulation, its step is：
A, substrate designs：A kind of power module of extra small encapsulation, including substrate, described substrate is copper, and whole surface is plated
Nickel, as shown in figure 1, substrate is divided into I area 1 and IIth area, I area 1 is provided with circular hole 8 to substrate structure, and Ith area 1 substrate thickness is 0.9MM,
II area's substrate thickness is 0.4MM, and I area 1 and IIth area connect the step forming 0.5MM, II divide into a area 21, b area 22, c area 23 its
Middle c area 23 is divided into A end 231, B end 232, C-terminal 233 and D end 234.
B, initially with 270 degree of high temperature soldering paste between substrate a area 21 and the A end 231 in c area 23 bonding input capacitance 4,
Input capacitance 4 is 220UF patch capacitor.Bonding output capacitance 7 between the C-terminal 233 in substrate c area 23 and the D end 234 in c area 23,
Electric capacity 7 is 220UF patch capacitor.Bonding inductance 6 between the B end 232 and the D end 234 in c area 23 in substrate c area 23, inductance 6 is
47UF chip inductor, is that reflow welding is crossed furnace rear and adopted 230 degree of low temperature soldering paste bonding power management chip 3 in substrate a area 201
With after bonding Schottky diode chip 5 in substrate b area 202 again reflow welding cross stove；Wherein power management chip 3 is
LM25XX series of power managing chip, Schottky diode chip 5 is 1N58XX series Schottky diode chip.
C, pressure welding is carried out to power management chip and Xiao Te diode using 25uM gold thread spun gold, first by the base of bonding device
Piece is heated to 90 degree, then uses pad and input capacitance 4 pad of 25uM spun gold source of welding current managing chip 3, uses 25uM
The pad of spun gold source of welding current managing chip 3 and the pad of inductance 6, finally use 25uM spun gold to weld the pad of inductance 6
Pad with Schottky diode chip 5.
D, by substrate embedding good for pressure welding, direct embedding is molded using plastic packaging material, the good substrate of pressure welding is put in mould,
Then epoxy resin is heated to 180 degree, after being cooled to room temperature after pouring mould into, opens mould.
Embodiment 3
A kind of method for packing of the power module of extra small encapsulation, its step is：
A, substrate designs：A kind of power module of extra small encapsulation, including substrate, described substrate is copper, and whole surface is plated
Nickel, as shown in figure 1, substrate is divided into I area 1 and IIth area, I area 1 is provided with circular hole 8 to substrate structure, and Ith area 1 substrate thickness is 1.1MM,
II area's substrate thickness is 0.2MM, and I area 1 and IIth area connect the step forming 0.9MM, and II divides into a area 21, b area 22, c area 23,
Wherein c area 23 is divided into A end 231, B end 232, C-terminal 233 and D end 234.
B, initially with 270 degree of high temperature soldering paste between substrate a area 21 and the A end 231 in c area 23 bonding input capacitance 4,
Input capacitance 4 is 220UF patch capacitor.Bonding output capacitance 7 between the C-terminal 233 in substrate c area 23 and the D end 234 in c area 23,
Electric capacity 7 is 220UF patch capacitor.Bonding inductance 6 between the B end 232 and the D end 234 in c area 23 in substrate c area 23, inductance 6 is
47UF chip inductor, is that reflow welding is crossed furnace rear and adopted 230 degree of low temperature soldering paste bonding power management chip 3 in substrate a area 201
With after bonding Schottky diode chip 5 in substrate b area 202 again reflow welding cross stove；Wherein power management chip 3 is
LM25XX series of power managing chip, Schottky diode chip 5 is 1N58XX series Schottky diode chip.
C, pressure welding is carried out to power management chip and Xiao Te diode using 25uM gold thread spun gold, first by the base of bonding device
Piece is heated to 90 degree, then uses pad and input capacitance 4 pad of 25uM spun gold source of welding current managing chip 3, uses 25uM
The pad of spun gold source of welding current managing chip 3 and the pad of inductance 6, finally use 25uM spun gold to weld the pad of inductance 6
Pad with Schottky diode chip 5.
D, by substrate embedding good for pressure welding, direct embedding is molded using plastic packaging material, the good substrate of pressure welding is put in mould,
Then epoxy resin is heated to 180 degree, after being cooled to room temperature after pouring mould into, opens mould.
Claims (3)
1. a kind of method for packing of the power module of extra small encapsulation is it is characterised in that step is：
A, substrate designs：Described substrate is copper, whole surface nickel plating, and described substrate is divided into Ith area（1）With IIth area, described Ith area
（1）It is provided with circular hole（8）, described Ith area（1）Substrate thickness is 1 ± 0.1 MM, and described II area's substrate thickness is 0.3 ± 0.1 MM,
Described Ith area（1）Connect the step of formation 0.7 ± 0.2 MM with IIth area, described II divides into a area（21）, b area（22）, c area
（23）, described c area（23）It is divided into A end（231）, B end（232）, C-terminal（233）With D end（234）；
B, initially with 270 degree of high temperature soldering paste in substrate a area（21）With c area（23）A end（231）Between bonding input capacitance
（4）, in substrate c area（23）C-terminal（233）With c area（23）D end（234）Between bonding output capacitance（7）, in substrate c area
（23）B end（232）With c area（23）D end（234）Between bonding inductance（6）, reflow welding crosses furnace rear and adopts 230 degree of low temperature
Soldering paste is in substrate a area（21）Upper bonding power management chip（3）With in substrate b area（22）Upper bonding Schottky diode chip
（5）Reflow welding crosses stove again afterwards；
C, pressure welding is carried out to power management chip and Xiao Te diode using spun gold, first by the substrate heating of bonding device to 85--
90 degree, then use spun gold source of welding current managing chip（3）Pad and input capacitance（4）Pad, uses the spun gold source of welding current
Managing chip（3）Pad and inductance（6）Pad, finally weld inductance with spun gold（6）Pad and Schottky two
Pole pipe chip（5）Pad；
D, by substrate embedding good for pressure welding, direct embedding is molded using plastic packaging material, the good substrate of pressure welding is put in mould, then
Epoxy resin is heated to 180-200 degree, after being cooled to room temperature after pouring mould into, opens mould.
2. a kind of power module of extra small encapsulation according to claim 1 method for packing it is characterised in that：Described power supply
Managing chip（3）With Schottky diode chip（5）Pad all silver-plated.
3. a kind of power module of extra small encapsulation according to claim 1 and 2 method for packing it is characterised in that：Described
Spun gold is 25uM gold thread.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310550475.3A CN103579217B (en) | 2013-11-08 | 2013-11-08 | Power module packaged in ultra-small mode and packaging method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310550475.3A CN103579217B (en) | 2013-11-08 | 2013-11-08 | Power module packaged in ultra-small mode and packaging method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103579217A CN103579217A (en) | 2014-02-12 |
| CN103579217B true CN103579217B (en) | 2017-02-08 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6366486B1 (en) * | 2000-08-29 | 2002-04-02 | Delta Electronics Inc. | Power supply device for enhancing heat-dissipating effect |
| CN201114903Y (en) * | 2007-08-24 | 2008-09-10 | 周志邦 | High-power LED light adjusting driving circuit |
| CN101694965A (en) * | 2009-10-16 | 2010-04-14 | 天津市东文高压电源厂 | Subminiature auto-excitation type high-voltage module power supply special for photomultipliers |
| CN203536435U (en) * | 2013-11-08 | 2014-04-09 | 天水天光半导体有限责任公司 | Subminiature packaged power supply module |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4859443B2 (en) * | 2005-11-17 | 2012-01-25 | 日立オートモティブシステムズ株式会社 | Power converter |
| JP5724314B2 (en) * | 2010-11-16 | 2015-05-27 | 富士電機株式会社 | Power semiconductor module |
-
2013
- 2013-11-08 CN CN201310550475.3A patent/CN103579217B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6366486B1 (en) * | 2000-08-29 | 2002-04-02 | Delta Electronics Inc. | Power supply device for enhancing heat-dissipating effect |
| CN201114903Y (en) * | 2007-08-24 | 2008-09-10 | 周志邦 | High-power LED light adjusting driving circuit |
| CN101694965A (en) * | 2009-10-16 | 2010-04-14 | 天津市东文高压电源厂 | Subminiature auto-excitation type high-voltage module power supply special for photomultipliers |
| CN203536435U (en) * | 2013-11-08 | 2014-04-09 | 天水天光半导体有限责任公司 | Subminiature packaged power supply module |
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| CN103579217A (en) | 2014-02-12 |
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