CN103576331B - The signal to noise ratio (S/N ratio) lifting gear of chirped pulse laser and method - Google Patents
The signal to noise ratio (S/N ratio) lifting gear of chirped pulse laser and method Download PDFInfo
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Abstract
The invention provides a kind of signal to noise ratio (S/N ratio) lifting gear and method for improving of chirped pulse laser, the signal to noise ratio (S/N ratio) device transformation efficiency solving existing raising ultrashort pulse is low, parameter is restive, cannot effectively suppress ns with down to the noise of hundred ps, technical matters that cost is high.An arm in Mach-Zehnder structure light path inserts the n level full-wave plate of Pockers cell and particular design, inserts half-wave plate in another road, and adopts conductance switch to drive Pockers cell to carry out scan-filtering.The present invention has high transformation efficiency, cascade can use, avoids unwanted nonlinear interaction simultaneously.
Description
Technical field
The present invention relates to a kind of device and method promoting chirped pulse laser signal-noise ratio.
Background technology
Ultra-short pulse laser technology develops rapidly in recent years, and psec produces the ultrashort pulse that can produce terawatt (TW) and even handkerchief watt peak power with amplifying technique at mesa dimensions to the laser pulse of femtosecond magnitude.And the amplifying technique of generation light laser ultrashort pulse main at present---chirped pulse amplification (CPA), in its amplification process, the forward position of laser pulse and rear edge can produce stronger spontaneous radiation and amplify (ASE), and when selected seed pulse, also can with subpulse.Although edge is compared with laser main pulse with subpulse noise before and after these, little several order of magnitude in intensity is extremely disadvantageous factor in the experiment of Ultra-intense laser pulse and matter interaction.Especially after the prepulsing line focus before main pulse, its power density is still very high, is enough to produce the physical processes such as Pre-plasma, thus affects the research of the physical phenomenon of main pulse and material effect.Therefore, the signal to noise ratio (S/N ratio) improving ultrashort pulse is one of important topic of Strong-field physics research.
At present, important signal to noise ratio (S/N ratio) method for improving mainly contains the technology such as plasma somascope, optical parameter chirped pulse amplification (OPCPA), ring cavity regenerative amplification, cross polarization ripple (XPW), photoswitch method.
Plasma somascope technology is surface ultra-short pulse laser being incided transparent optical medium material, and prepulsing transmission is gone out, and main pulse forward position produces plasma at material surface; After the density of plasma exceedes critical electron density, transparent medium will become reflectivity close to the plasma of 1 instantaneously from the solid grown tall to this laser wave, reflects main pulse, thus defines the plasma somascope effect be exceedingly fast.Signal to noise ratio (S/N ratio) conversion efficiency is lower, parameter is restive, cost is high to utilize this effect to promote.
Optical parameter chirped pulse amplification is the method for comparatively ripe lifting signal to noise ratio (S/N ratio), but lower than CPA system amplification efficiency.
The ring cavity put in advance for prime is a kind of regenerative amplification technology, improves the laser pulse contrast of interstage amplifier section to a certain extent, but can not eliminate the Spontaneous Emission in rear class amplification, and load-carrying capacity is limited.
Cross polarization ripple (XPW) utilizes the high-order nonlinear characteristic of material to carry out filtering, to improve the contrast of laser.The method is applicable to the ultrashort laser pulse after compressing, and its peak power is higher, be subject to the restriction of material damage threshold value, and conversion efficiency is lower.
Photoswitch method utilizes the short electric pulse of 4-7ns to drive Pockers cell, changes laser polarization direction thus reach the subpulse eliminating several more than ns time, but due to the restriction of its short electric pulse generation technology, can not be used for the signal to noise ratio (S/N ratio) promoting below the ns time.
Summary of the invention
The object of the invention is to: signal to noise ratio (S/N ratio) lifting gear and method that a kind of chirped pulse laser is provided, the signal to noise ratio (S/N ratio) device and method transformation efficiency solving existing raising ultrashort pulse is low, parameter is restive, cannot effectively suppress ns with down to the noise of hundred ps, technical matters that cost is high.
Technical solution of the present invention is:
The signal to noise ratio (S/N ratio) lifting gear of chirped pulse laser, its special character is: comprise at least one-level and carry out the Mach-Zehnder filter of filtering for the laser sent Chirp pulse amplification laser system; Described Mach-Zehnder filter comprises the Mach-Zehnder structure of two-arm equivalent optical path, the half-wave plate inserted in Mach-Zehnder structure one arm, inserts Pockers cell in another arm of Mach-Zehnder structure and n level full-wave plate; The optical axis of described half-wave plate is 45 ° with the polarization direction of the laser injecting half-wave plate; The optical axis of n level full-wave plate is at 45 ° with the polarization direction of the laser injecting n level full-wave plate; Described Pockers cell is powered by high-voltage power supply.
One arm of above-mentioned Mach-Zehnder structure comprises the first beam splitting chip and the second beam splitting chip, another arm comprises the first catoptron and the second catoptron, described first beam splitting chip and incident light are 45 °, incident light is divided into first light path consistent with incident light direction and second light path vertical with input path direction after the first beam splitting chip, described second beam splitting chip to be positioned in the first light path and vertical with the first beam splitting chip, described second light path is provided with first catoptron vertical with the first beam splitting chip, described second catoptron is positioned on the reflected light path of the first catoptron, and the second catoptron is vertical with the first catoptron, light path after second catoptron reflection and the emitting light path of the first beam splitting chip are interfered at the second beam splitting chip place, the light delay unit making two-arm equivalent optical path is provided with between in first beam splitting chip of described Mach-Zehnder structure and the second beam splitting chip.
Mach-Zehnder filter also comprises photoconductivity switching and the 3rd beam splitting chip; Described 3rd beam splitting chip is arranged between Chirp pulse amplification laser system and Mach-Zehnder filter, the road laser energy that described 3rd beam splitting chip separates is for triggering photoconductivity switching, another road laser energy injects Mach-Zehnder filter, and described photoconductivity switching is for driving Pockers cell; Described photoconductivity switching provides voltage by high-voltage power supply.
The voltage that high-voltage power supply provides is 2 times of Pockers cell half-wave voltage.
Above-mentioned first beam splitting chip and the second beam splitting chip are the depolarization beam splitting chip of splitting ratio 50:50.
Above-mentioned half-wave plate is the zero-order half-wave sheet sending the centre wavelength of laser for Chirp pulse amplification laser system.
Above-mentioned high-voltage power supply is high-voltage pulse power source, and the triggering electric signal of described high-voltage pulse power source is from the synchro control electric signal of chirped pulse amplification system.
A signal to noise ratio (S/N ratio) method for improving for chirped pulse laser, is characterized in that, comprise the following steps:
1] the chirped pulse laser that Chirp pulse amplification laser system sends is divided into the first light path and the second light path after the first beam splitting chip;
2] the first light path produces 90 ° of polarizations through half-wave plate, and the optical axis of described half-wave plate and the polarization direction of incident laser are 45 °; Second light path produces 90 ° of polarizations through Pockers cell and n level full-wave plate, and the polarization direction of described n level full-wave plate and incident laser is 45 °;
3] the first light path after polarization and the second light path form the chirped pulse laser of high s/n ratio after the second beam splitting chip place interferes.
Step 1] also comprise the following steps of chirped pulse laser before the first beam splitting chip light splitting, with the 3rd beam splitting chip, chirped pulse laser is divided into two-way, wherein a road laser energy is for triggering photoconductivity switching, photoconductivity switching triggers Pockers cell and forms ramp voltage, and another road laser energy injects the first beam splitting chip.
Advantage of the present invention:
1, transformation efficiency is high.The optical device loss of using in light path of the present invention is very little, and the two-arm eventually through Mach-Zehnder interferes reinforcement to export, as long as the laser energy better controlling two-arm is equal, just can ensure the final laser needed for high-level efficiency output.
2, can cascade use.The every one-level wave filter of the present invention can be used alone, also can multi-stage cascade, and promoting effect will be multiplied.
3, unwanted nonlinear interaction is avoided.Because high power ultra-short pulse laser is easy to introduce harmful nonlinear interaction, make that laser pulse beam quality degenerates, pulse division, become silk etc.The present invention applies under chirped pulse state, and the peak power of pulse laser is not high, effectively can avoid nonlinear effect.
Accompanying drawing explanation
Fig. 1 is a kind of example block diagram of Mach-Zehnder structure;
Fig. 2 (a) is the sweep ramp voltage-time graph on Pockers cell;
Fig. 2 (b) is the chirped pulse wavelength-time diagram corresponding with Fig. 2 (a);
Fig. 3 (a) is the operating voltage-time diagram on Pockers cell;
Fig. 3 (b) is the laser pulse intensity-time diagram corresponding with Fig. 3 (a);
Fig. 4 is that the n level full-wave plate of particular design and Pockers cell are jointly to the turning effort figure of polarization.
Wherein: 1-Chirp pulse amplification laser system; 2-the 3rd beam splitting chip; 3-first beam splitting chip; 4-half-wave plate; 5-second beam splitting chip; 6-high-voltage pulse power source; 7-photoconductivity switching; 8-Pockers cell; 9-n level full-wave plate; R3 ~ R6-broadband mirrors; R1-first catoptron; R2-second catoptron; R7-catoptron.
Embodiment
As Fig. 1, a kind of signal to noise ratio (S/N ratio) lifting gear of chirped pulse laser, comprises at least one-level and carries out the Mach-Zehnder filter of filtering for the laser sent Chirp pulse amplification laser system 1; Mach-Zehnder filter comprises the Mach-Zehnder structure of two-arm equivalent optical path, the half-wave plate 4 inserted in Mach-Zehnder structure one arm, inserts Pockers cell 8 in another arm of Mach-Zehnder structure and n level full-wave plate 9, and the position of Pockers cell 8 and n level full-wave plate 9 can exchange.
The optical axis of half-wave plate 4 and incident laser polarization direction are 45 °, and half-wave plate 4 is the zero-order half-wave sheets 4 for laser center wavelength, to make centre wavelength polarization half-twist.The optical axis of n level full-wave plate 9 and the polarization direction of incident laser at 45 °.
Pockers cell 8 is driven by photoconductivity switching 7, the 3rd beam splitting chip 2 is provided with between Chirp pulse amplification laser system 1 and Mach-Zehnder filter, the laser that described Chirp pulse amplification laser system 1 sends separates a road laser energy through the 3rd beam splitting chip 2 and is used for triggering photoconductivity switching 7, the trigger energy of photoconductivity switching 7 is generally tens micro-Jiao, the larger laser energy in another road injects Mach-Zehnder filter, when photoconductivity switching 7 is not on the laser optical path that the 3rd beam splitting chip 2 separates, catoptron R7 can be set, laser be caused on photoconductivity switching 7.Adopt high pressure resistant, high-speed response, photoconductivity switching 7 without time jitter, the voltage of the scan-filtering be added on Pockers cell 8 is made to be ramp voltage, also directly ramp voltage can be added on Pockers cell 8, trigger photoconductivity switching with the laser that Chirp pulse amplification laser system 1 sends, achieve the high-precise synchronization of ramp voltage and chirped pulse laser.
Pockers cell 8 and photoconductivity switching 7 provide voltage by high-voltage power supply, namely photoconductivity switching 7 and Pockers cell 8 are connected in parallel on pulse power output terminal, and photoconductivity switching 7, Pockers cell 8 and high-voltage power supply three are altogether, simultaneously, the magnitude of voltage that high-voltage power supply provides is 2 times of Pockers cell 8 half-wave voltage, its object is to scan-filtering need to scan 0V from the half-wave voltage of 2 times, complete single pass.High-voltage power supply can select high-voltage pulse power source 6, high-voltage pulse power source 6 is triggered with the synchronous electric signal of Chirp pulse amplification laser system 1, first add high pressure to photoconduction to reach, tens micro-burnt laser energies that then the 3rd beam splitting chip 2 separates trigger photoconductivity switching 7 and open.High-voltage pulse power source 6 adopts existing power supply, is made up of avalanche transistor on-off circuit, high-power MOS tube on-off circuit, thyratron trigger switch circuit, and has connected high pressure resistant electric capacity for energy storage at output terminal.In the present invention, available output is the pulse power of positive high voltage or negative high voltage, because the result that in this wave filter, Pockers cell 8 responds is by required wavelength laser polarization direction half-twist, so plus or minus high pressure all can reach this object.High-voltage pulse power source 6 provides trigger pip by the source of synchronising signal in Chirp pulse amplification laser system 1, photoconductivity switching 7 and Pockers cell 8 can be made to be in high pressure conditions after, laser pulse just arrives photoconductivity switching 7 triggering and conducting, forms quick negative edge (ramp voltage) for scan-filtering.
Mach-Zehnder structure includes but not limited to following this structure: an arm of Mach-Zehnder structure comprises the first beam splitting chip 3 and the second beam splitting chip 5, another arm comprises the first catoptron R1 and the second catoptron R2, described first beam splitting chip 3 is 45 ° with incident light, incident light is divided into first light path consistent with incident light direction and second light path vertical with input path direction after the first beam splitting chip 3, described second beam splitting chip 5 to be positioned in the first light path and vertical with the first beam splitting chip 3, described second light path is provided with the first catoptron R1 vertical with the first beam splitting chip 3, described second catoptron R2 is positioned on the reflected light path of the first catoptron R1, and the second catoptron R2 is vertical with the first catoptron R1, light path after second catoptron R2 reflects and the emitting light path of the first beam splitting chip 3 are interfered at the second beam splitting chip 5 place.
Based on this kind of structure, half-wave plate is arranged between the first beam splitting chip 3 and the second beam splitting chip 5, Pockers cell and n level full-wave plate are arranged between the first catoptron R1 and the second catoptron R2, Pockers cell and n level full-wave plate position can exchange, and Pockers cell, n level full-wave plate can exchange with the position of half-wave plate as a whole.The two-arm light path of this Mach-Zehnder structure is unequal, therefore in the arm that light path is shorter, increase the light delay unit for making two-arm equivalent optical path, such as in FIG, light delay unit was inserted before or after half-wave plate 4, light delay unit comprises 4 catoptron R3 ~ R6, and 4 catoptrons are preferably broadband mirrors.
The depolarization beam splitting chip of the first beam splitting chip 3 in the Mach-Zehnder structure of various structure and the second beam splitting chip 5 to be all splitting ratio be 50:50, the 3rd beam splitting chip 2 does not have particular/special requirement.
By centre wavelength and the progression of design n level full-wave plate 9, ramp voltage U (t) can be made to change to 0V from high pressure HV, correspond to chirped pulse optical maser wavelength and change to shortwave (positive chirped pulse laser) from long wave, and the centre wavelength of laser pulse is corresponding with 1/2HV, on Pockers cell 8, added ramp voltage U (t) is over time as shown in Fig. 2 (a), and chirped pulse wavelength (t) is over time as shown in Fig. 2 (b).
See Fig. 3, the operating voltage-time variation diagram (a) on Pockers cell 8, is in 0V when original state; Before laser pulse arrives, the synchronous electric signal that sends of Chirped Pulse Laser Amplifier System triggers high-voltage pulse power source 6, makes photoconductivity switching 7 and Pockers cell 8 power on to press and rise to HV; Open rapidly when laser pulse triggers photoconductivity switching 7, the storage capacitor in the pulse power discharges rapidly and forms quick negative edge.Path adjustable optical postpone to make chirped laser pulse by during Pockers cell 8 just in time corresponding ramp voltage change on Pockers cell 8, as schemed shown in (b).Its principle is: Pockers cell 8 and n level full-wave plate 9 compound action, and scan start point is high pressure HV, is now chirped pulse long wave end polarization direction half-twist; Sweep center point is 1/2HV, and the half-wave voltage of corresponding chirped pulse pulse center wavelength, by polarization direction half-twist; Sweep stopping point is low pressure 0V, the shortwave end polarization direction half-twist of corresponding chirped pulse.The final required whole half-twist in chirped pulse polarization direction, produces with the laser of another polarization direction, road half-twist and interferes on the second beam splitting chip 5, only interferes from a direction and strengthens exporting; And noise light polarization direction can not rotate under the effect of Pockers cell 8 and n level full-wave plate 9, thus reduce on outbound course.
N level full-wave plate 9 is the n level full-wave plates 9 according to laser spectrum width and centre wavelength design processing, n level full-wave plate 9 and Pockers cell 8 form the combination wave plate become with voltage, after ensureing to add ramp voltage on Pockers cell 8, make through the polarization direction of laser respective wavelength obtain 90 ° of deflections, and other wavelength will not deflect or deflection angle is less.N level full-wave plate 9 is made by birefringent material, and its thickness will spectral scan scope according to actual needs be determined, is generally the n level full-wave plate 9 to centre wavelength.After the combination of Pockers cell 8 and n level full-wave plate 9, the phase delay along two polarization directions of wave plate optical axis and vertical optical axis is:
Wherein d is multistage full-wave plate thickness, and Δ n is its o light and e anaclasis rate variance; n
0for the refractive index of Pockers cell 8, γ
63it is electrooptical coefficient.
In order to be expressly understood scan-filtering process, we have done the numerical simulation of this wave filter according to formula (1), as shown in Figure 4.Selecting parameter is: the wideband light source of centre wavelength 800nm, and Pockers cell 8 voltage is 0V, 3kV, 6kV, 9kv respectively.Fig. 4 is 10 grades of full-wave plates, the quartz crystal of thickness 0.92mm, the polarization variations figure when different voltage.Voltage drops to the process of 0V from high pressure 9kV, and corresponding polarization rotates peak value 900nm and moves successively () to short wavelength 760nm from long wavelength 830nm Fig. 4 from right to left.Find out thus, the thickness of wave plate just determines the bandwidth of filtering, and also determines starting point (polarization corresponding during high pressure rotates peak value) and the terminating point (polarization that 0V is corresponding rotates peak value) of scanning.
A signal to noise ratio (S/N ratio) method for improving for chirped pulse laser, comprises the following steps:
1] the chirped pulse laser that sends of Chirp pulse amplification laser system 1, with the 3rd beam splitting chip 2, chirped pulse laser is divided into two-way, wherein a road laser energy is for triggering photoconductivity switching 7, and photoconductivity switching 7 conducting forms ramp voltage for driving Pockers cell 8; Another road laser energy injects the first beam splitting chip 3, is divided into the first light path and the second light path after the first beam splitting chip 3;
2] the first light path produces 90 ° of polarizations through half-wave plate 4, and the described optical axis of half-wave plate 4 and the polarization direction of incident laser are 45 °; Second light path produces 90 ° of deflections through Pockers cell 8 and the acting in conjunction of n level full-wave plate 9, and the optical axis of n level and the polarization direction of incident laser are 45 °;
3] the first light path after polarization and the second light path form the chirped pulse laser of high s/n ratio after the second beam splitting chip 5 place interferes.
This device carries out scan-filtering for the chirped pulse laser of (or rear) before laser amplifier, filter the noise sections such as spontaneous radiation, the centre of homology wavelength of wave filter changes along with the wavelength variations of chirped pulse, make the efficiency of transmission of chirped pulse very high, and noise wavelength's composition efficiency of transmission such as the spontaneous radiation of laser crystal are low, obtain the ultrashort pulse without group velocity dispersion after final compression chirped pulse, its signal to noise ratio (S/N ratio) will be improved.Cascade uses, and ascending effect will be multiplied.The parameter designing of Optimal Filter, can effectively suppress ns with the noise down to hundred ps, thus realizes the lifting of the ultrashort pulse signal to noise ratio (S/N ratio) after compression.
Claims (9)
1. the signal to noise ratio (S/N ratio) lifting gear of chirped pulse laser, is characterized in that: comprise at least one-level and carry out the Mach-Zehnder filter of filtering for the laser sent Chirp pulse amplification laser system;
Described Mach-Zehnder filter comprises the Mach-Zehnder structure of two-arm equivalent optical path, the half-wave plate inserted in Mach-Zehnder structure one arm, inserts Pockers cell in another arm of Mach-Zehnder structure and n level full-wave plate;
The optical axis of described half-wave plate is 45 ° with the polarization direction of the laser injecting half-wave plate; The optical axis of n level full-wave plate is at 45 ° with the polarization direction of the laser injecting n level full-wave plate;
Described Pockers cell is powered by high-voltage power supply.
2. the signal to noise ratio (S/N ratio) lifting gear of chirped pulse laser according to claim 1, it is characterized in that: an arm of described Mach-Zehnder structure comprises the first beam splitting chip and the second beam splitting chip, another arm comprises the first catoptron and the second catoptron, described first beam splitting chip and incident light are 45 °, incident light is divided into first light path consistent with incident light direction and second light path vertical with input path direction after the first beam splitting chip, described second beam splitting chip to be positioned in the first light path and vertical with the first beam splitting chip, described second light path is provided with first catoptron vertical with the first beam splitting chip, described second catoptron is positioned on the reflected light path of the first catoptron, and the second catoptron is vertical with the first catoptron, interfered at the second beam splitting chip place through the light beam of the first beam splitting chip outgoing by the light beam of the second catoptron reflection and the first light path in second light path, the light delay unit making two-arm equivalent optical path is provided with between first beam splitting chip of described Mach-Zehnder structure and the second beam splitting chip.
3. the signal to noise ratio (S/N ratio) lifting gear of chirped pulse laser according to claim 1 and 2, is characterized in that: Mach-Zehnder filter also comprises photoconductivity switching and the 3rd beam splitting chip; Described 3rd beam splitting chip is arranged between Chirp pulse amplification laser system and Mach-Zehnder filter, the road laser energy that described 3rd beam splitting chip separates is for triggering photoconductivity switching, another road laser energy injects Mach-Zehnder filter, and described photoconductivity switching is for driving Pockers cell; Described photoconductivity switching provides voltage by high-voltage power supply.
4. the signal to noise ratio (S/N ratio) lifting gear of chirped pulse laser according to claim 3, is characterized in that: the voltage that high-voltage power supply provides is 2 times of Pockers cell half-wave voltage.
5. the signal to noise ratio (S/N ratio) lifting gear of chirped pulse laser according to claim 4, is characterized in that: described first beam splitting chip and the second beam splitting chip are the depolarization beam splitting chip of splitting ratio 50:50.
6. the signal to noise ratio (S/N ratio) lifting gear of chirped pulse laser according to claim 5, is characterized in that: described half-wave plate is the zero-order half-wave sheet sending the centre wavelength of laser for Chirp pulse amplification laser system.
7. the signal to noise ratio (S/N ratio) lifting gear of chirped pulse laser according to claim 6, is characterized in that: described high-voltage power supply is high-voltage pulse power source, and the triggering electric signal of described high-voltage pulse power source is from the synchro control electric signal of chirped pulse amplification system.
8. the signal to noise ratio (S/N ratio) method for improving of chirped pulse laser, is characterized in that, comprise the following steps:
1] the chirped pulse laser that Chirp pulse amplification laser system sends is divided into the first light path and the second light path after the first beam splitting chip;
2] the first light path produces 90 ° of polarizations through half-wave plate, and the optical axis of described half-wave plate and the polarization direction of incident laser are 45 °; Second light path produces 90 ° of polarizations through Pockers cell and n level full-wave plate, and the optical axis of n level full-wave plate and the polarization direction of incident laser are 45 °;
3] light beam through being reflected by the second catoptron in the light beam of the first beam splitting chip outgoing and the second light path in the first light path after polarization forms the chirped pulse laser of high s/n ratio after the second beam splitting chip place interferes.
9. the signal to noise ratio (S/N ratio) method for improving of chirped pulse laser according to claim 8, it is characterized in that: step 1] also comprise the following steps of chirped pulse laser before the first beam splitting chip light splitting, with the 3rd beam splitting chip, chirped pulse laser is divided into two-way, wherein a road laser energy is for triggering photoconductivity switching, photoconductivity switching conducting forms ramp voltage and then drives Pockers cell, and another road laser energy injects the first beam splitting chip.
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| CN104617479B (en) * | 2015-02-13 | 2017-12-08 | 中国工程物理研究院激光聚变研究中心 | A kind of laser energy stability device and its energy stabilization method based on prefix pulse |
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