CN101867145A - Method for increasing signal to noise ratio of femtosecond laser through F-P (Fabry-Perol) etalon internally installed with electro-optic crystal - Google Patents
Method for increasing signal to noise ratio of femtosecond laser through F-P (Fabry-Perol) etalon internally installed with electro-optic crystal Download PDFInfo
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- CN101867145A CN101867145A CN201010186441A CN201010186441A CN101867145A CN 101867145 A CN101867145 A CN 101867145A CN 201010186441 A CN201010186441 A CN 201010186441A CN 201010186441 A CN201010186441 A CN 201010186441A CN 101867145 A CN101867145 A CN 101867145A
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Abstract
The invention relates to a method for increasing the signal to noise ratio of a femtosecond laser through an F-P (Fabry-Perol) etalon internally installed with an electro-optic crystal and a device thereof, which belong to the technical field of ultrashort pulses. The method comprises the following steps: firstly, stretching a femtosecond laser pulse to be increased in the signal to noise ratio, which is output from a femtosecond laser light source, into chirp signal light; enabling an instaneous spectral filtering function output by the F-P etalon to be consistent with the chirp size of the chirp signal light by modulating the voltages of both ends of the electro-optic crystal internally installed in the F-P etalon, and thereby, a chirp signal pulse efficiently pass, whereas noise is filtered off to achieve the goal of increasing the signal to noise ratio of the chirp pulse; finally, compressing the chirp signal light into the femtosecond laser with higher signal to noise ratio. The device for realizing the method comprises the femtosecond laser light source, a laser pulse stretcher, the F-P etalon, the electro-optic crystal, a high-voltage pulse power supply, a laser pulse compressor and the like. The signal to noise ratio of the femtosecond laser can be effectively increased by adopting the method and the device. Moreover, the device has simple structure and convenient adjustment.
Description
Technical field
The present invention relates to a kind of method and device thereof that promotes femtosecond magnitude laser signal to noise ratio, relate in particular to a kind of F-P (Fabry-Perot) etalon and promote the method for femtosecond magnitude laser signal to noise ratio and the device of realizing this method, belong to the ultrashort pulse technical field by the in-built electrical luminescent crystal.
Background technology
In recent years, along with the appearance of chirped pulse amplification (CPA) technology, the high power ultra-short pulse laser system has obtained and has developed by leaps and bounds.Utilize the nd glass laser device of kJ magnitude, the laser pulse peaks power of its output can reach the PW magnitude, focuses on light intensity and can reach 10
21～22W/cm
2Magnitude.When laser and solid target interaction, when laser intensity reaches 10
13W/cm
2The time, can produce plasma, even laser intensity is less than 10
13W/cm
2, if itself and solid target interaction time long enough can produce plasma too.To focus strength is 10
22W/cm
2The target practice pulse, the intensity of its prepulsing can not be higher than 10
13W/cm
2, otherwise it can destroy the interactional condition of main pulse and target, thus require the signal to noise ratio of this type of laser system to reach 10
10More than, therefore, be necessary to study the signal to noise ratio that how to promote ultra-short pulse laser.
At present, the method that is used to promote the ultrashort pulse signal to noise ratio mainly contains following several:
(i) cross polarization wave (XPW) method
Because it is a four wave mixing process that cross polarization wave produces, and comes from the anisotropy of the third-order non-linear tensor real part of crystal.Cross polarization wave produces and is directly proportional with the cube of input pulse intensity, thereby can promote its signal to noise ratio effectively.People such as V.Chvykov utilize the cross polarization wave technology that its signal to noise ratio is promoted above 4 magnitudes, thereby have obtained signal to noise ratio up to 10
11Laser pulse (V.Chvykov, P.Rousseau, S.Reed, the et al.Generationof10 of 50TW
11Contrast 50 TW laser pulses[J] .Optics Letters, 2006,31 (10): 1456～1458).
(ii) saturable absorber (Saturable Absorber) method
People such as Kyung-Han Hong are with the μ J level energy injected system of the repetition rate of 1KHz, and utilize the saturable absorber method to obtain 4 * 10
8Signal to noise ratio, signal to noise ratio has promoted 400 times of (K.H.Hong, B.Hou, J.A.Nees, et al.Generation and measurement of＞10
8Intensity contrast ratio in a relativistic kHzchirped-pulse amplified laser[J] .Applied physics B, 2005,81:447～457).But adopt the saturable absorber method nonlinear phase shift can occur, thereby cause the distortion of light beam space profiles, and the desired peak power of non-linear saturated absorption generally can equally also can cause the distortion of light beam space profiles above most of mediums generation self focusing energy needed.
(iii) plasma somascope (Plasma Mirror) filter method
Because the plasma somascope is low more to the high more pulse-echo rate of intensity, vice versa.Therefore, can remove the little prepulsing of intensity with it, thereby be expected to the input signal signal to noise ratio is risen to 2 order of magnitude [Yutaka Nomura, LaszloVeisz, Karl Schmid, et al.Time-resolved reflectivity measurements on a plasma mirror withfew-cycle laser pulses[J] .New Journal of Physics, 2007,9:1～8].And people such as G.Doumy [G.Doumy, Ph.Martin, M.Pedrix, et al.Practical double plasma-mirror pulse cleaner forhigh-intensity femtosecond laser-plasma harmonics.Quantum Electronics and Laser ScienceConference (QELS), 2005:2021～2023] adopt the method for double plasma mirror filtering that contrast has been promoted 4 * 10
4Doubly, obtained to surpass 10
11Signal to noise ratio.But the filtering of using plasma mirror exists, and conversion efficiency is low, light path is adjusted problems such as complexity.
Summary of the invention
Purpose of the present invention provides a kind of device that promotes the method for femtosecond laser signal to noise ratio and realize this method by the F-P etalon of in-built electrical luminescent crystal just in order to overcome existing deficiency in the above-mentioned prior art.Method provided by the invention and device thereof can realize that high efficiency passes through the femtosecond laser signal and its noise of filtering, thereby reach the purpose that promotes the femtosecond laser signal to noise ratio effectively.
Optical principle of the present invention is that the interference effect of comprehensive utilization F-P (Fabry-Perot) etalon and the electro optic effect of crystal promote the femtosecond laser signal to noise ratio.Its basic thought is: the femtosecond laser of the signal to noise ratio to be hoisted that femtosecond laser light source is exported carries out broadening earlier, makes it to form the chirp signal light that contains chirp signal pulse and noise; Apply different voltages by being engraved on the electrooptic crystal two ends when the difference then,, form this character that scan-type sees through spectrum thus, and make the F-P etalon have the different instantaneous spectrums that sees through constantly in difference to change the adjacent two transmitted beam phase differences of F-P etalon.The time dependent speed of centre frequency that sees through spectrum when F-P etalon instantaneous and the time dependent speed of chirp signal pulse instantaneous frequency are promptly warbled big or small when consistent, can realize greatly filtering out noise light, and high efficiency is passed through flashlight, thereby reaches the purpose of the signal to noise ratio that promotes chirp signal light; At last, shorten the chirp signal optical pressure after the signal to noise ratio lifting into femtosecond laser again with high s/n ratio.
For realizing above-mentioned purpose of the present invention, the present invention adopts the technical scheme that is made of following measure to be achieved.
The F-P etalon that passes through the in-built electrical luminescent crystal provided by the invention promotes the method for femtosecond laser signal to noise ratio, may further comprise the steps:
(i) femtosecond laser with signal to noise ratio to be hoisted adopts the optical pulse broadening device to carry out broadening, makes it to form the chirp signal light that contains chirp signal pulse and noise;
(ii) apply different voltages, by formula promptly by being engraved on the electrooptic crystal two ends when the difference
The voltage control function, make the F-P etalon have the different instantaneous spectrums that sees through, and make the instantaneous time dependent speed of centre frequency that sees through spectrum promptly warble big or small consistent with the time dependent speed of the instantaneous frequency of chirp signal pulse, greatly filter out noise light with this, and pass through flashlight expeditiously, thereby promote the signal to noise ratio of chirp signal light effectively;
(iii) utilize optical pulse compressor at last, the chirp signal optical pressure after signal to noise ratio is promoted shortens the femtosecond laser with high s/n ratio into.
In the technique scheme, the described electrooptic crystal two ends that are engraved on when difference apply different voltages in 0～13kV scope.
The device that the present invention adopts for the method that realizes above-mentioned lifting femtosecond laser signal to noise ratio, along the light ray propagation direction, be the Z direction, comprise opticses such as first block of plate of femtosecond laser light source, optical pulse broadening device, F-P etalon of producing signal to noise ratio initialize signal light to be hoisted and second block of plate of F-P etalon, electrooptic crystal, high-voltage pulse power source, optical pulse compressor successively; The femtosecond laser of described femtosecond laser light source output makes it to form the chirp signal light that contains chirp signal pulse and noise through optical pulse broadening device broadening; Then, make chirp signal light incide first block of plate of F-P etalon, and by behind the electrooptic crystal that drives by high-voltage pulse power source, again from second plate outgoing of F-P etalon; At last, chirp signal light is compressed into the femtosecond laser with high s/n ratio through optical pulse compressor.
In the technique scheme, the femtosecond laser light source of described generation initialize signal light is the titanium sapphire laser device.
In the technique scheme, first block of plate of described F-P etalon and second block of plate of F-P etalon are made up of the flat board of placing that is parallel to each other.
In the technique scheme, the surface in opposite directions of first block of plate of described F-P etalon and second block of plate of F-P etalon is coated with the silverskin of high reflectance, or the aluminium film.
In the technique scheme, described electrooptic crystal adopts potassium dideuterium phosphate (KD
*P), or ammonium dihydrogen phosphate (ADP), or potassium dihydrogen phosphate (KDP).
In the technique scheme, described optical pulse broadening device is made up of grating pair, or by prism to forming.
In the technique scheme, described optical pulse compressor is made up of grating pair, or by prism to forming.
The present invention compared with prior art has following useful technique effect:
1, the F-P etalon that the present invention is based on the in-built electrical luminescent crystal promotes the method for femtosecond magnitude laser signal to noise ratio and realizes the experimental provision of this method, and the comparable original signal to noise ratio of filtered signal to noise ratio promotes two magnitudes.
2, the F-P etalon that the present invention is based on the in-built electrical luminescent crystal promotes the method for femtosecond magnitude laser signal to noise ratio and realizes the experimental provision of this method, can not only promote the signal to noise ratio of femtosecond laser effectively, and it is very high that flashlight sees through efficient, can reach more than 95%.
3, the F-P etalon that the present invention is based on the in-built electrical luminescent crystal promotes the device of femtosecond magnitude laser signal to noise ratio, has outstanding advantages such as simple in structure, that device is easy to adjust.
Description of drawings
Fig. 1 is the principle schematic that the F-P etalon that the present invention is based on the in-built electrical luminescent crystal promotes the method for femtosecond laser signal to noise ratio;
Fig. 2 is the apparatus structure schematic diagram that realization the present invention is based on the F-P etalon lifting femtosecond laser signal to noise ratio method of in-built electrical luminescent crystal.
Among the figure, the pulse of 1-chirp signal; The 2-noise; The instantaneous spectrum that sees through of 3-F-P etalon; The instantaneous spectrum scanning pattern that sees through of 4-F-P etalon; The I-laser intensity; The t-time; ω-angular frequency; The 5-femtosecond laser light source; 6-optical pulse broadening device; First block of plate of 7-1-F-P etalon; Second block of plate of 7-2-F-P etalon; The 8-electrooptic crystal; The 9-high-voltage pulse power source; The 10-optical pulse compressor.
Embodiment
Below in conjunction with accompanying drawing, and the method for the invention and device thereof are described in further detail, but it only is used to illustrate concrete execution modes more of the present invention, and should not be construed as any qualification protection range of the present invention by specific embodiment.
The F-P etalon that the present invention is based on the in-built electrical luminescent crystal promote femtosecond magnitude laser signal to noise ratio method principle as shown in Figure 1.Among Fig. 1, I represents laser intensity, and t is the time, and ω is an angular frequency; The scanning pattern 4 that instantaneous spectrum 3 differences that see through of different F-P etalons constantly, F-P etalon instantaneous see through spectrum 3 is direction as shown by arrows, and the instantaneous spectrum 3 that sees through acts on chirp signal pulse 1 and noise 2 simultaneously.Yet, since instantaneous see through spectrum 3 rate travel in time and chirp signal pulse 1 instantaneous frequency over time speed promptly warble big or small consistent, thereby chirp signal pulse 1 is seen through expeditiously; And the instantaneous frequency of noise 2 speed and instantaneous spectrum 3 rate travel in time that sees through are inconsistent over time, cause its transmitance very low, thereby the signal to noise ratio of femtosecond laser promoted.
The F-P etalon that the present invention is based on the in-built electrical luminescent crystal promotes apparatus structure that the method for femtosecond magnitude laser signal to noise ratio provides as shown in Figure 2.Along the light ray propagation direction, be the Z direction, comprise the first plate 7-1 of femtosecond laser light source 5, optical pulse broadening device 6, F-P etalon, electrooptic crystal 8, high-voltage pulse power source 9, second plate 7-2 of F-P etalon, the optical pulse compressor 10 that produce signal to noise ratio initialize signal light to be hoisted successively.The femtosecond laser of femtosecond laser light source 5 outputs of described generation signal to noise ratio initialize signal to be hoisted light makes it to form the chirp signal light that contains chirp signal pulse and noise through optical pulse broadening device 6 broadenings; Then, make chirp signal light incide first plate 7-1 of F-P etalon, and by behind the electrooptic crystal 8 that drives by high-voltage pulse power source 9, again from second plate 7-2 of F-P etalon outgoing; At last, the chirp signal light after its signal to noise ratio promotes is compressed into the femtosecond laser with high s/n ratio through optical pulse compressor 10.
The controlled step of high voltage source described in apparatus of the present invention is as follows:
(i) the light field complex amplitude through multiple-beam interference that transmits from second plate 7-2 of F-P etalon can be expressed as:
In the formula: ρ for the F-P etalon be coated with silver or aluminium film in opposite directions the surface reflectivity,
Phase difference for adjacent two transmitted light beams;
(ii) the transmitted light intensity that can obtain second plate 7-2 of F-P etalon by (1) formula is:
Thereby the spectral function that sees through of second plate 7-2 of F-P etalon is:
(iii) after the electrooptic crystal two ends that place F-P etalon inside added electric field, its principal refractive index was changed to:
So, from the phase difference of adjacent two transmitted light beams of second plate 7-2 of F-P etalon output be:
(4)
In the formula: Δ n is that electric induced refractive index changes, and φ is a reflection phase transformation, and L is first plate 7-1 of F-P etalon and second plate 7-2 two parallel plates spacing, and d is an electrooptic crystal length;
What (iV) above-mentioned phase difference (4) formula substitution (3) formula is obtained the F-P etalon sees through spectral function T, when signal light wavelength λ (t) in time t warble when changing, should correspondingly change the both end voltage V (t) of electrooptic crystal, make the transmitance of signal light wavelength of corresponding moment correspondence
Can draw the time dependent expression formula of the voltage that is added on the electrooptic crystal thus:
Thereby when the chirp rate of voltage control function rate and chirp signal pulse over time is consistent, the chirp signal pulse is passed through expeditiously, noise is then by filtering, and promotes the signal to noise ratio of chirp signal light thus.
Install each optical element by Fig. 2 structure, it is 0.96 silverskin that the surface in opposite directions of first plate 7-1 of described F-P etalon and second plate 7-2 two parallel plates is coated with reflectivity, and electrooptic crystal 8 is by potassium dideuterium phosphate (KD
*P) make, length is 3cm, electro-optic coefficient 23.6 * 10
-12V/m, distance is than KD between F-P etalon two flat boards
*The long 6 μ m of P, optical pulse broadening device 6 and optical pulse compressor 10 all adopt the grating pair of being made up of the diffraction grating of two antiparallels arrangements, and the incisure density of diffraction grating is 600 lines/mm.
Described femtosecond laser light source 5 adopts the titanium sapphire ultra-short pulse laser light source of 800nm centre wavelength, inceptive impulse width 50fs, bandwidth 18.7nm.Relation before and after the described chirped pulse broadening between the pulsewidth can be expressed from the next:
In the formula, Δ T
0Be respectively pulsewidth before and after the chirped pulse broadening with Δ T, C is the parameter of warbling of chirped pulse.Through broadening afterpulse width is 1ns, and peak strength is 450Mw/cm
2, chirp coefficient is 20000.
When initial signal to noise ratio is 10
8Chirped pulse inject built-in KD
*During the F-P etalon of P,, make to be applied to KD by adjusting high-voltage pulse power source 9
*Voltage V (t) on the P changes in 0～5kV voltage range with the linear forms of slope for-2317V/ns, so that consistent with the size of warbling of chirp signal pulse, the chirped pulse signal to noise ratio behind spectral filtering is about 3 * 10
10, the initial signal to noise ratio 10 of signal to noise ratio
8Promoted about 300 times, promptly signal to noise ratio has promoted 2 magnitudes, and the efficient that sees through of chirp signal light can be up to more than 95%.
In this example used electrooptic crystal among the embodiment 1 is replaced with ammonium dihydrogen phosphate (ADP), other conditions are all identical with embodiment 1, when initial signal to noise ratio is 10
8Chirped pulse when injecting the F-P etalon of built-in ADP, by adjusting high-voltage pulse power source 9, make to be applied to KD
*Voltage V (t) on the P changes in 0～13kV voltage range with the linear forms of slope for-6308V/ns, so that consistent with the size of warbling of chirp signal pulse, the chirped pulse signal to noise ratio behind spectral filtering is about 3 * 10
10, the initial signal to noise ratio 10 of signal to noise ratio
8Promoted about 300 times, promptly signal to noise ratio has promoted 2 magnitudes, and the efficient that sees through of chirp signal light also can be up to more than 95%.
In this example used electrooptic crystal among the embodiment 1 is replaced with potassium dihydrogen phosphate (KDP), pulse stretcher 6 all adopts the prism of being made up of the prism of two antiparallels arrangements right with pulse shortener 10, other conditions are all identical with embodiment 1, when initial signal to noise ratio is 10
8Chirped pulse when injecting the F-P etalon of built-in ADP, by adjusting high-voltage pulse power source 9, make to be applied to KD
*Voltage V (t) on the P changes in 0～10kV voltage range with the linear forms of slope for-5160V/ns, so that consistent with the size of warbling of chirp signal pulse, the chirped pulse signal to noise ratio behind spectral filtering is about 3 * 10
10, the initial signal to noise ratio 10 of signal to noise ratio
8Promoted about 300 times, promptly signal to noise ratio has promoted 2 magnitudes, and the efficient that sees through of chirp signal light also can be up to more than 95%.
Claims (9)
1. one kind promotes the method for femtosecond laser signal to noise ratio by the F-P etalon of in-built electrical luminescent crystal, it is characterized in that this method may further comprise the steps:
(i) femtosecond laser with signal to noise ratio to be hoisted adopts the optical pulse broadening device to carry out broadening, makes it to form the chirp signal light that contains chirp signal pulse (1) and noise (2);
(ii) apply different voltages, by formula promptly by being engraved on electrooptic crystal (8) two ends when the difference
The voltage control function, make the F-P etalon have the different instantaneous spectrums (3) that sees through, and the instantaneous frequency that makes speed and the chirp signal pulse (1) over time of the instantaneous centre frequency that sees through spectrum (3) over time speed promptly warble big or small consistent, by flashlight, promote the signal to noise ratio of chirp signal light to filter out noise light effectively;
(iii) utilize optical pulse compressor (10) at last, the chirp signal optical pressure after signal to noise ratio is promoted shortens the femtosecond laser with high s/n ratio into.
2. method according to claim 1 is characterized in that being engraved on described electrooptic crystal (8) two ends and applies different voltages in 0～13kV scope when difference.
3. device that promotes the femtosecond laser signal to noise ratio by the F-P etalon of in-built electrical luminescent crystal, along the light ray propagation direction, be the Z direction, comprise femtosecond laser light source (5), optical pulse broadening device (6), first block of plate of F-P etalon (7-1) and the second block of plate of F-P etalon (7-2), electrooptic crystal (8), high-voltage pulse power source (9) and the optical pulse compressor (10) that produce signal to noise ratio initialize signal light to be hoisted successively; The femtosecond laser of the femtosecond laser light source of described signal to noise ratio to be hoisted (5) output makes it to form chirp signal light through optical pulse broadening device (6) broadening; Make chirp signal light incide first block of plate of F-P etalon (7-1), and by behind the electrooptic crystal (8) that drives by high-voltage pulse power source (9), again from second block of plate of F-P etalon (7-2) outgoing; Last chirp signal light is compressed into the femtosecond laser with high s/n ratio through optical pulse compressor (10).
4. device according to claim 3 is characterized in that the femtosecond laser light source (5) of described generation initialize signal light is the titanium sapphire laser device.
5. according to claim 3 or 4 described devices, it is characterized in that first block of plate (7-1) of described F-P etalon and second block of plate (7-2) of F-P etalon be made up of the flat board of placing that is parallel to each other.
6. according to claim 3 or 5 described devices, it is characterized in that the surface in opposite directions of second block of plate of first block of plate of described F-P etalon (7-1) and F-P etalon (7-2) is coated with the silverskin of high reflectance, or the aluminium film.
7. device according to claim 3 is characterized in that described electrooptic crystal (8) adopts potassium dideuterium phosphate (KD
*P), or ammonium dihydrogen phosphate (ADP), or potassium dihydrogen phosphate (KDP).
8. device according to claim 3 is characterized in that described optical pulse broadening device (6) is made up of grating pair, or by prism to forming.
9. device according to claim 3 is characterized in that described optical pulse compressor (10) is made up of grating pair, or by prism to forming.
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| CN102073188A (en) * | 2010-12-24 | 2011-05-25 | 中国科学院西安光学精密机械研究所 | Method for increasing femtosecond pulse signal-to-noise ratio and implementation device |
| CN102261955A (en) * | 2011-05-03 | 2011-11-30 | 杭州电子科技大学 | Method for detecting polarization and spectral characteristics of light beam |
| CN103576331A (en) * | 2012-08-09 | 2014-02-12 | 中国科学院西安光学精密机械研究所 | Signal to noise ratio improving device and method for chirped pulse laser |
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| CN112903123A (en) * | 2021-02-01 | 2021-06-04 | 中国科学院上海光学精密机械研究所 | Method and device for measuring single signal-to-noise ratio boost degree of plasma mirror based on synchronous chirp probe pulse |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102073188A (en) * | 2010-12-24 | 2011-05-25 | 中国科学院西安光学精密机械研究所 | Method for increasing femtosecond pulse signal-to-noise ratio and implementation device |
| CN102261955A (en) * | 2011-05-03 | 2011-11-30 | 杭州电子科技大学 | Method for detecting polarization and spectral characteristics of light beam |
| CN103576331A (en) * | 2012-08-09 | 2014-02-12 | 中国科学院西安光学精密机械研究所 | Signal to noise ratio improving device and method for chirped pulse laser |
| CN103576331B (en) * | 2012-08-09 | 2015-11-18 | 中国科学院西安光学精密机械研究所 | The signal to noise ratio (S/N ratio) lifting gear of chirped pulse laser and method |
| CN106602398A (en) * | 2017-01-25 | 2017-04-26 | 中国科学院福建物质结构研究所 | Electro-optic Q-modulated tunable laser and method thereof, and laser medical equipment applying the laser |
| CN109066282A (en) * | 2018-07-12 | 2018-12-21 | 哈尔滨工程大学 | A kind of device and method for realizing superpower pulse output |
| CN112903123A (en) * | 2021-02-01 | 2021-06-04 | 中国科学院上海光学精密机械研究所 | Method and device for measuring single signal-to-noise ratio boost degree of plasma mirror based on synchronous chirp probe pulse |
| CN112903123B (en) * | 2021-02-01 | 2022-08-09 | 中国科学院上海光学精密机械研究所 | Method and device for measuring single signal-to-noise ratio boost degree of plasma mirror based on synchronous chirp probe pulse |
| CN113346347A (en) * | 2021-05-06 | 2021-09-03 | 电子科技大学 | YVO for Nd4Laser intensity noise suppression device of laser |
| CN113346347B (en) * | 2021-05-06 | 2022-12-13 | 电子科技大学 | YVO used as Nd 4 Laser intensity noise suppression device of laser |
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Application publication date: 20101020 |