CN103572255B - Metal chemical vapor deposition equipment and reaction chamber thereof - Google Patents
Metal chemical vapor deposition equipment and reaction chamber thereof Download PDFInfo
- Publication number
- CN103572255B CN103572255B CN201210284671.6A CN201210284671A CN103572255B CN 103572255 B CN103572255 B CN 103572255B CN 201210284671 A CN201210284671 A CN 201210284671A CN 103572255 B CN103572255 B CN 103572255B
- Authority
- CN
- China
- Prior art keywords
- pallet
- reaction chamber
- vapour deposition
- chemical vapour
- container cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
A kind of chemical vapour deposition reaction chamber and there is the Metal chemical vapor deposition equipment of this reaction chamber, described chemical vapour deposition reaction chamber comprises inlet system, ruhmkorff coil, exhaust system and pallet, described ruhmkorff coil is arranged on the outside of reaction chamber, for the pallet of reacting by heating chamber interior, it is characterized in that, described pallet has container cavity, is provided with scatterer in described container cavity.According to chemical vapour deposition reaction chamber of the present invention and Metal chemical vapor deposition equipment, in the container cavity of pallet, be provided with scatterer dispel the heat to pallet, enhance the radiating efficiency of pallet, make pallet fast cooling, improve working efficiency, and without the need to passing into cooling gas in reaction chamber, and then avoid generation particle in reaction chamber and pollute substrate.Because scatterer is contained in airtight container cavity, therefore scatterer can not affect the purity of the process gas in reaction chamber, better can ensure the technological effect of chemical vapour deposition.
Description
Technical field
The present invention relates to a kind of chemical vapour deposition reaction chamber and there is the Metal chemical vapor deposition equipment of this chamber.
Background technology
Metal organic chemical vapor deposition (MOCVD) at present uniquely can prepare nitride high-brightness LED epitaxial material and for the growing technology of scale production.This technology growth speed is moderate, can control thickness more accurately, is particularly suitable for LED(photodiode, LightEmittingDiode) large-scale industrial production.The principle of MOCVD is after organic metal gas and other process gass enter reaction chamber, and on the substrate slice surface being heated to high temperature, high-temperature chemical reaction occurs, the product deposition of generation, at substrate surface, obtains the multilayer LED epitaxial wafer of various structure.MOCVD device adopts induction heating usually, in technological process, grows different retes, Heating temperature needed for substrate is different, particularly in growth Multiple Quantum Well technique, need periodic heating and cooling, for this reason, adopt nitrogen directly to lower the temperature to tray surface traditionally.
But nitrogen easily produces particle by during chamber, pollute substrate surface, have a strong impact on process results, and the object of cooling will be reached, need at substantial nitrogen, add cost.
Summary of the invention
The present invention one of is intended to solve the problems of the technologies described above at least to a certain extent or at least provides a kind of useful business to select.For this reason, one object of the present invention is to propose a kind of good heat dissipation effect and the chemical vapour deposition reaction chamber that can improve the technological effect of chemical vapour deposition.
Second object of the present invention is the Metal chemical vapor deposition equipment proposing to have above-mentioned reaction chamber.
According to the chemical vapour deposition reaction chamber of the embodiment of the present invention, comprise inlet system, ruhmkorff coil, exhaust system and pallet, described ruhmkorff coil is arranged on the outside of reaction chamber, for the pallet of reacting by heating chamber interior, described pallet has container cavity, is provided with scatterer in described container cavity.
According to the chemical vapour deposition reaction chamber of the embodiment of the present invention, in the container cavity of pallet, be provided with scatterer pallet is dispelled the heat.Thus, enhance the radiating efficiency of pallet, make pallet fast cooling, improve the working efficiency of chemical vapour deposition reaction chamber, and without the need to passing into cooling gas in reaction chamber, and then avoid generation particle in reaction chamber and pollute substrate.Because scatterer is contained in airtight container cavity, therefore scatterer can not affect the purity of the process gas in reaction chamber, therefore, it is possible to better ensure the technological effect of chemical vapour deposition.
According to one embodiment of present invention, described inlet system is made up of process gas inlet system and cooling gas inlet system, described exhaust system is made up of process gas exhaust system and cooling gas exhaust-duct, described cooling gas inlet system is connected with described container cavity, for carrying cooling gas in described container cavity, described cooling gas discharges container cavity by the cooling gas exhaust-duct be connected with container cavity.
According to one embodiment of present invention, described pallet comprises the first pallet and the second pallet, the lower surface of described first pallet is provided with the first groove and the upper surface of described second pallet is provided with the second groove, and described first pallet is arranged on described second pallet and described first groove is relative to the second groove to form described container cavity.
According to one embodiment of present invention, described scatterer comprises cylindrical body and is arranged on the radiator element in described cylindrical body.
According to one embodiment of present invention, described radiator element radially has fin.
According to one embodiment of present invention, described radiator element is multiple, described radiator element respectively along described pallet radial direction to extend and circumferential interval along described pallet is arranged.
According to one embodiment of present invention, each described radiator element is provided with multiple fin, and described multiple fin to be arranged and the size of described multiple fin reduces from outside to inside gradually along the radial direction of described pallet along the spaced radial of described pallet.
According to one embodiment of present invention, described cooling gas is pressurized air.
According to one embodiment of present invention, described pallet is that multiple and described multiple pallet is arranged to multilayer in interval along the vertical direction.
The chemical vapour deposition reaction chamber according to previous embodiment of the present invention is comprised according to the Metal chemical vapor deposition equipment of the embodiment of the present invention.
According to the Metal chemical vapor deposition equipment of the embodiment of the present invention, the radiating efficiency of pallet is high, and pallet fast cooling, improves working efficiency, and without the need to passing into cooling gas, such as nitrogen, avoids and produce particle and pollute substrate.Because scatterer is contained in airtight container cavity, therefore scatterer can not affect the purity of the process gas in reaction chamber, therefore, it is possible to better ensure the technological effect of chemical vapour deposition.
Additional aspect of the present invention and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage will become obvious and easy understand from accompanying drawing below combining to the description of embodiment, wherein:
Fig. 1 is the schematic diagram of chemical vapour deposition reaction chamber according to an embodiment of the invention;
Fig. 2 is the schematic diagram of chemical vapour deposition reaction chamber according to another embodiment of the present invention;
Fig. 3 is the schematic diagram of scatterer according to the chemical vapour deposition reaction chamber of another embodiment of the present invention and pallet;
Fig. 4 is the schematic diagram of the scatterer of the chemical vapour deposition reaction chamber of figure according to one embodiment of present invention; With
Fig. 5 is the diagrammatic cross-section along the line A-A in Fig. 3.
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Be exemplary below by the embodiment be described with reference to the drawings, be intended to for explaining the present invention, and can not limitation of the present invention be interpreted as.
In describing the invention, it will be appreciated that, term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ", " thickness ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward ", " clockwise ", orientation or the position relationship of the instruction such as " counterclockwise " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore limitation of the present invention can not be interpreted as.
In addition, term " first ", " second " only for describing object, and can not be interpreted as instruction or hint relative importance or imply the quantity indicating indicated technical characteristic.Thus, be limited with " first ", the feature of " second " can express or impliedly comprise one or more these features.In describing the invention, the implication of " multiple " is two or more, unless otherwise expressly limited specifically.
In the present invention, unless otherwise clearly defined and limited, the term such as term " installation ", " being connected ", " connection ", " fixing " should be interpreted broadly, and such as, can be fixedly connected with, also can be removably connect, or connect integratedly; Can be mechanical connection, also can be electrical connection; Can be directly be connected, also indirectly can be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, above-mentioned term concrete meaning in the present invention can be understood as the case may be.
In the present invention, unless otherwise clearly defined and limited, fisrt feature second feature it " on " or D score can comprise the first and second features and directly contact, also can comprise the first and second features and not be directly contact but by the other characterisation contact between them.And, fisrt feature second feature " on ", " top " and " above " comprise fisrt feature directly over second feature and oblique upper, or only represent that fisrt feature level height is higher than second feature.Fisrt feature second feature " under ", " below " and " below " comprise fisrt feature immediately below second feature and tiltedly below, or only represent that fisrt feature level height is less than second feature.
Describe the chemical vapour deposition reaction chamber according to the embodiment of the present invention with reference to the accompanying drawings in detail.
As shown in Figure 1, according to the chemical vapour deposition reaction chamber of the embodiment of the present invention, comprise inlet system, ruhmkorff coil 10, exhaust system and pallet 20.Wherein, ruhmkorff coil 10 is arranged on the outside of reaction chamber around ground, for the pallet 20 of reacting by heating chamber interior.Pallet 20 has container cavity 21, is provided with scatterer 30 in container cavity 21.
In the embodiment shown in fig. 1, single level trays 20 is provided with in reaction chamber.Be understandable that, in reaction chamber, multiple layer tray 20 can be set, will describe in detail below.
According to the chemical vapour deposition reaction chamber of the embodiment of the present invention, in the container cavity 21 of pallet 20, be provided with scatterer 30 pairs of pallets 20 dispel the heat.Thus, scatterer 30 pairs of pallets 20 are adopted to dispel the heat, enhance the radiating efficiency of pallet 20, make the temperature of pallet 20 can fast cooling, improve the working efficiency of chemical vapour deposition reaction chamber, without the need to passing into cooling gas in reaction chamber, and then avoid generation particle in reaction chamber and pollute substrate.Because scatterer 30 is contained in airtight container cavity 21, therefore the purity of the process gas that can not affect in reaction chamber that therefore dispels the heat can better ensure the technological effect of chemical vapour deposition.
According to one embodiment of present invention, as depicted in figs. 1 and 2, inlet system is made up of process gas inlet system 41 and cooling gas inlet system 42, particularly, cooling gas inlet system 42 comprises the cooling gas inlet pipe be located in reaction chamber, cooling gas inlet pipe is formed with the through hole be connected with the container cavity 21 of pallet 20, cooling gas inlet system 42 for carrying cooling gas in the container cavity 21 of pallet 20.Be understandable that, other forms of inlet system known in the art can be adopted, be not described in detail here.
Exhaust system is made up of process gas exhaust system 51 and cooling gas exhaust-duct 52, particularly, cooling gas exhaust-duct 52 comprises the cooling gas vapor pipe be located in reaction chamber, cooling gas vapor pipe is formed with the through hole be communicated with the container cavity 21 of pallet 20, discharges container cavity 21 to make the cooling gas completing heat exchange in container cavity 21 by cooling gas vapor pipe.Be understandable that, other forms of exhaust system known in the art can be adopted, be not described in detail here.
Further, according to one embodiment of present invention, cooling gas can be pressurized air.Thus, match in cooling gas inlet system 42 and cooling gas exhaust-duct 52, make the cooling gas in the container cavity 21 of pallet 20 with flowing, are convenient to cooling gas and pallet 20 carries out thermal exchange.And cooling air can take away the heat on scatterer 30, enhance the radiating effect of scatterer 30.Adopt pressurized air as cooling gas, fast to scatterer and pallet refrigeration when pressurized air can not only be made to expand, improve the heat dispersion of scatterer, and reduce cost.
According to one embodiment of present invention, as shown in Figure 3, pallet 20 comprises the first pallet 22 and the second pallet 23.The lower surface of the first pallet 22 (namely lower surface) is as shown in Figure 3 provided with the first groove (not shown), and the upper surface of the second pallet 23 (namely upper surface) is as shown in Figure 3 provided with the second groove (not shown).First pallet 22 is arranged on the second pallet 23, and described first groove is relative to the second groove to form container cavity 21.Thus, make pallet 20 structure simple, processing and easy to assembly and be convenient to installation of heat radiator 30.
According to one embodiment of present invention, as shown in Figures 3 to 5, scatterer 30 comprises cylindrical body 31 and the radiator element 32 be arranged in cylindrical body 31.Further, radiator element 32 is multiple, and the circumferential interval of radiator element 32 respectively along the radial direction extension of pallet 20 and along pallet 20 is arranged, namely as shown in Figure 5, thus, the area of dissipation of scatterer 30 is added, and be convenient to cooling gas flowing, improve the radiating effect of scatterer 30.
According to one embodiment of present invention, as shown in Figure 5, radiator element 32 radially has fin 321.Each radiator element 32 is provided with multiple fin 321.Multiple fin 321 is arranged along the spaced radial of pallet 32, and the size of multiple fin 321 reduces from outside to inside gradually along the radial direction of pallet 20.Thus, further add the area of dissipation of scatterer 30, improve the radiating effect of scatterer 30.
Below with reference to Fig. 2, chemical vapour deposition reaction chamber is according to another embodiment of the present invention described.
As shown in Figure 2, in reaction chamber, be provided with multiple layer tray 20 along the vertical direction, as mentioned above, be all formed with container cavity 21 in every layer of pallet 20, and in container cavity, be provided with scatterer 30.
In this embodiment of the invention, the cooling gas inlet pipe extended along the vertical direction is provided with in reaction chamber, cooling gas inlet pipe is provided with the through hole be communicated with the container cavity 21 of every layer of pallet 20, delivers into container cavity 21 to make cooling gas by cooling gas inlet pipe.Also be provided with cooling gas vapor pipe in reaction chamber, cooling gas vapor pipe be formed with the through hole be communicated with the container cavity 21 of every layer of pallet 20 respectively, export container cavity 21 to make the cold air in container cavity 21 by cooling gas vapor pipe.Owing to being provided with multiple layer tray 20 in reaction chamber, thus, improve the working efficiency of reaction chamber, reduce costs.
According to the Metal chemical vapor deposition equipment of the embodiment of the present invention, comprise the chemical vapour deposition reaction chamber described according to the aforementioned any embodiment of the present invention, Metal chemical vapor deposition equipment according to the embodiment of the present invention can be known, is not described in detail here.
According to the Metal chemical vapor deposition equipment of the embodiment of the present invention, the radiating efficiency of pallet strengthens, and improves the working efficiency of reaction chamber.Such as, and without the need to passing into cooling gas, nitrogen, avoids and produces particle and pollute substrate.Because scatterer is contained in airtight container cavity, therefore scatterer can not affect the purity of the process gas in reaction chamber, therefore, it is possible to better ensure the technological effect of chemical vapour deposition.
In the description of this specification sheets, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, identical embodiment or example are not necessarily referred to the schematic representation of above-mentioned term.And the specific features of description, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
Although illustrate and describe embodiments of the invention above, be understandable that, above-described embodiment is exemplary, can not be interpreted as limitation of the present invention, those of ordinary skill in the art can change above-described embodiment within the scope of the invention when not departing from principle of the present invention and aim, revising, replacing and modification.
Claims (10)
1. a chemical vapour deposition reaction chamber, comprise inlet system, ruhmkorff coil, exhaust system and pallet, described ruhmkorff coil is arranged on the outside of reaction chamber, for the pallet of reacting by heating chamber interior, it is characterized in that, described pallet has container cavity, is provided with scatterer in described container cavity.
2. chemical vapour deposition reaction chamber according to claim 1, it is characterized in that, described inlet system is made up of process gas inlet system and cooling gas inlet system, described exhaust system is made up of process gas exhaust system and cooling gas exhaust-duct, described cooling gas inlet system is connected with described container cavity, for carrying cooling gas in described container cavity, described cooling gas discharges container cavity by the cooling gas exhaust-duct be connected with container cavity.
3. chemical vapour deposition reaction chamber according to claim 1, it is characterized in that, described pallet comprises the first pallet and the second pallet, the lower surface of described first pallet is provided with the first groove and the upper surface of described second pallet is provided with the second groove, and described first pallet is arranged on described second pallet and described first groove is relative to the second groove to form described container cavity.
4. chemical vapour deposition reaction chamber according to claim 1, is characterized in that, described scatterer comprises cylindrical body and is arranged on the radiator element in described cylindrical body.
5. chemical vapour deposition reaction chamber according to claim 4, is characterized in that, described radiator element radially has fin.
6. chemical vapour deposition reaction chamber according to claim 4, is characterized in that, described radiator element is multiple, and the circumferential interval of described radiator element respectively along the radial direction extension of described pallet and along described pallet is arranged.
7. chemical vapour deposition reaction chamber according to claim 5, it is characterized in that, each described radiator element is provided with multiple fin, and described multiple fin to be arranged and the size of described multiple fin reduces from outside to inside gradually along the radial direction of described pallet along the spaced radial of described pallet.
8. chemical vapour deposition reaction chamber according to claim 2, is characterized in that, described cooling gas is pressurized air.
9. chemical vapour deposition reaction chamber according to claim 1, is characterized in that, described pallet is that multiple and described multiple pallet is arranged to multilayer in interval along the vertical direction.
10. a Metal chemical vapor deposition equipment, is characterized in that, comprises the chemical vapour deposition reaction chamber according to any one of claim 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210284671.6A CN103572255B (en) | 2012-08-10 | 2012-08-10 | Metal chemical vapor deposition equipment and reaction chamber thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210284671.6A CN103572255B (en) | 2012-08-10 | 2012-08-10 | Metal chemical vapor deposition equipment and reaction chamber thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103572255A CN103572255A (en) | 2014-02-12 |
| CN103572255B true CN103572255B (en) | 2016-02-10 |
Family
ID=50044947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210284671.6A Active CN103572255B (en) | 2012-08-10 | 2012-08-10 | Metal chemical vapor deposition equipment and reaction chamber thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103572255B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106757326A (en) * | 2017-01-25 | 2017-05-31 | 浙江理工大学 | Epitaxial growth unit and application for manufacturing the one chip epitaxial furnace of silicon epitaxial wafer |
| CN108517512A (en) * | 2018-03-09 | 2018-09-11 | 昆山国显光电有限公司 | A kind of chemical vapor depsotition equipment and its reaction chamber |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1076110A1 (en) * | 1999-08-12 | 2001-02-14 | Applied Materials, Inc. | Cooling gas used with a self-sputtering method |
| JP3909944B2 (en) * | 1998-01-12 | 2007-04-25 | キヤノンアネルバ株式会社 | Information recording disk substrate cooling mechanism and substrate processing apparatus provided with the cooling mechanism |
| CN101191202A (en) * | 2006-12-01 | 2008-06-04 | 甘志银 | Heating system for metal organic substance chemical gaseous phase deposition device reaction cavity |
| CN101285176A (en) * | 2008-06-11 | 2008-10-15 | 南京航空航天大学 | Method and device for realizing matrix temperature equalization in preparation process of diamond film spherical cap |
| CN101933121A (en) * | 2008-02-04 | 2010-12-29 | 株式会社Eugene科技 | Substrate supporting unit, substrate processing apparatus, and method of manufacturing substrate supporting unit |
| CN102485953A (en) * | 2010-12-01 | 2012-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pallet device and crystallized film growth device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6676810B2 (en) * | 2000-01-12 | 2004-01-13 | D2 In-Line Solutions, Llc | Method of coating insulative substrates |
-
2012
- 2012-08-10 CN CN201210284671.6A patent/CN103572255B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3909944B2 (en) * | 1998-01-12 | 2007-04-25 | キヤノンアネルバ株式会社 | Information recording disk substrate cooling mechanism and substrate processing apparatus provided with the cooling mechanism |
| EP1076110A1 (en) * | 1999-08-12 | 2001-02-14 | Applied Materials, Inc. | Cooling gas used with a self-sputtering method |
| CN101191202A (en) * | 2006-12-01 | 2008-06-04 | 甘志银 | Heating system for metal organic substance chemical gaseous phase deposition device reaction cavity |
| CN101933121A (en) * | 2008-02-04 | 2010-12-29 | 株式会社Eugene科技 | Substrate supporting unit, substrate processing apparatus, and method of manufacturing substrate supporting unit |
| CN101285176A (en) * | 2008-06-11 | 2008-10-15 | 南京航空航天大学 | Method and device for realizing matrix temperature equalization in preparation process of diamond film spherical cap |
| CN102485953A (en) * | 2010-12-01 | 2012-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pallet device and crystallized film growth device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103572255A (en) | 2014-02-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102691100B (en) | Process chamber device and epitaxial equipment with it | |
| CN102953046B (en) | CVD (chemical vapor deposition) reaction cavity and CVD equipment | |
| CN102677164B (en) | Pallet, chamber device and epitaxial device | |
| CN103572255B (en) | Metal chemical vapor deposition equipment and reaction chamber thereof | |
| CN103215632B (en) | A kind of growth method of large size c orientation sapphire single-crystal | |
| CN103938186B (en) | Pallet, MOCVD reaction chamber and MOCVD device | |
| KR101704147B1 (en) | Device for producing polycrystal silicon and method for producing polycrystal silicon | |
| CN103031540A (en) | Reaction cavity device and substrate processing equipment with same | |
| WO2018065852A3 (en) | Epitaxial deposition reactor with reflector external to the reaction chamber and cooling method of a susceptor and substrates | |
| CN104233460B (en) | Reaction chamber and MOCVD equipment provided with reaction chamber | |
| CN104099584A (en) | Reaction chamber and plasma processing equipment | |
| CN102094185A (en) | Barrel-shaped metal organic chemical vapor deposition reaction tube | |
| CN106567043A (en) | An evaporation deposition device and method | |
| CN205262254U (en) | Heat transfer formula material heating device | |
| CN103871928B (en) | Semiconductor device and heater thereof | |
| CN102925873A (en) | Reaction chamber temperature control apparatus and semiconductor processing apparatus applying the same | |
| CN102953051A (en) | Chamber device and substrate treating plant with same | |
| CN102433548B (en) | Uniform gas flow gas inlet device and uniform gas inlet method for vapor deposition | |
| CN104513971A (en) | Reaction chamber and plasma processing apparatus | |
| CN202380081U (en) | Uniform vapor flow intake device for vapor deposition | |
| CN103397308A (en) | Spray head used for MOCVD equipment | |
| CN103794528A (en) | Semiconductor processing equipment | |
| CN103840044A (en) | Method for manufacturing quantum well structure of epitaxial wafer | |
| CN102796992A (en) | Reaction chamber device and substrate processing equipment with same | |
| CN105420814B (en) | A kind of crystal growth reactor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
|
| CP01 | Change in the name or title of a patent holder |