CN103560147A - Nitrogen and phosphorus zinc oxide thin film, preparation method thereof and thin film transistor - Google Patents
Nitrogen and phosphorus zinc oxide thin film, preparation method thereof and thin film transistor Download PDFInfo
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- CN103560147A CN103560147A CN201310554881.7A CN201310554881A CN103560147A CN 103560147 A CN103560147 A CN 103560147A CN 201310554881 A CN201310554881 A CN 201310554881A CN 103560147 A CN103560147 A CN 103560147A
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- nitrogen phosphorus
- nitrogen
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- phosphorus oxygen
- zinc
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- DLISVLVFJRCVJM-UHFFFAOYSA-N zinc oxygen(2-) phosphane Chemical compound [O--].P.[Zn++] DLISVLVFJRCVJM-UHFFFAOYSA-N 0.000 title abstract 4
- 238000004544 sputter deposition Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 50
- IPDZGBLBEDHVOD-UHFFFAOYSA-N [Zn].[P].[O].[N] Chemical compound [Zn].[P].[O].[N] IPDZGBLBEDHVOD-UHFFFAOYSA-N 0.000 claims description 39
- 239000011701 zinc Substances 0.000 claims description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims description 10
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 230000001105 regulatory effect Effects 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000005477 sputtering target Methods 0.000 claims 1
- 239000013077 target material Substances 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 24
- 239000010410 layer Substances 0.000 description 19
- 239000011787 zinc oxide Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 5
- 230000005355 Hall effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 230000009643 growth defect Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 150000001768 cations Chemical group 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NJTIHUZBENJFCQ-UHFFFAOYSA-N [O].[P].[Zn] Chemical compound [O].[P].[Zn] NJTIHUZBENJFCQ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- -1 oxonium ion Chemical class 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Thin Film Transistor (AREA)
Abstract
The invention discloses a nitrogen and phosphorus zinc oxide thin film, a preparation method thereof and a thin film transistor. The nitrogen and phosphorus zinc oxide thin film is composed of ZnxPyO1-x-y-zNz, wherein x is larger than or equal to 55% and smaller than or equal to 65%, y is larger than or equal to 1% and smaller than or equal to 10%, and z is larger than or equal to 10% and smaller than or equal to 22%, and the percentage sum of the number of atoms of each atom is 100%. The nitrogen and phosphorus zinc oxide thin film is deposited through ion sputtering, and the thin film transistor made of given thin film materials has high carrier mobility and stability.
Description
Technical field
The present invention relates to a kind of preparation of semiconductive thin film, particularly relate to a kind of nitrogen phosphorus oxygen zinc film and preparation method thereof and thin-film transistor.
Background technology
In the time of nearly more than ten years, the liquid crystal display device that the silicon materials TFT of take is driver element has obtained and has developed rapidly with series of advantages such as its volume are little, lightweight, quality is high, and becomes the Message Display Terminal of main flow.Yet along with the raising of people to performance requirements such as display device resolution, response speed, stability, the TFT that the silicon materials of take are active layer exposes a series of problem, mobility is lower (is generally less than 0.5cm due to himself for a-Si TFT backboard
2/ (Vs), cannot realize high-resolution and show; Low temperature polycrystalline silicon (LTPS) TFT technology complex manufacturing, equipment investment is high, the problem that panel faces lack of homogeneity, yields is low, production cost is high etc. is difficult to overcome, it shows that at large scale FPD further developing of field is subject to larger restriction.
Compare with the silicon TFT extensively adopting in the active driving matrix of liquid crystal display at present, oxide semiconductor TFT has following advantage: (1) field-effect mobility is higher; (2) on-off ratio is high; (3) preparation technology's temperature is low; (4) can make large area amorphous film, good uniformity, has good consistent electrology characteristic; (5) affected by visible ray little, more stable than amorphous silicon film transistor; (6) can be made into transparent devices.In flat panel display field, oxide TFT technology almost meets all requirements of many display modes such as comprising AMOLED drives, jumbotron liquid crystal display fast, 3D demonstration.Aspect flexibility demonstration, backing material can not bear high temperature, and preparation technology's temperature of oxide TFT is low, compatible with flexible substrate, thereby metal oxide TFT possesses greater advantage.
But in typical a-IGZO, the random distribution of a large amount of cations form the scattering mechanism of electronics, cause carrier mobility relatively low.And owing to there being a large amount of oxygen room in a-IGZO film, under the condition of illumination and back bias voltage, in its band gap, the existence in donor-type oxygen room will cause the bad stability of device, so this thin-film transistor existence and stability problem.
Summary of the invention
Technical problem to be solved by this invention is: make up above-mentioned the deficiencies in the prior art, propose a kind of nitrogen phosphorus oxygen zinc film and preparation method thereof and thin-film transistor, the thin-film transistor of its making can obtain maximum carrier mobility
Technical problem of the present invention is solved by following technical scheme:
A phosphorus oxygen zinc film, it consists of Zn
xp
yo
1-x-y-zn
z, wherein, 55%≤x≤65%, 1%≤y≤10%, 10%≤z≤22%, the atom number percentage sum of each atom is 100%.
Preferably, 59%≤x≤61%, 5%≤y≤8%, 12%≤z≤15%.
The present invention adopts the anion of non-oxygen to replace oxonium ion in zinc oxide, and then adjusts the valence band of oxide, eliminates the oxygen room in oxide semiconductor, and because cation is nearly all Zn
2+, be different from traditional a-IGZO, there are a large amount of cationic random distribution, reduced the potential barrier in carrier transport.Experiment shows:
Semiconductor containing zinc is that if zinc content has lacked, conductive capability reduces by anion vacant (defect) conduction in essence, if zinc too high levels, illustrate and have a large amount of defects, more and more approach conductor, the TFT that performance is good need to find balance with film between this, acquisition conductive capability is suitable, defect is not many, and in the present invention, when atom zinc is less than 55%, the carrier mobility of film reduces, when atom zinc is greater than 65%, film is polycrystalline structure and has raised growth defect.
In sputter procedure, cube Zn
3n
2, hexagon ZnO and belong to the Zn of tetragonal crystal system
3p
2between there is growth competition relation, contribute to the formation of nitrogen oxygen phosphorus zinc amorphous phase, yet when the content of nitrogen and phosphorous reduces, film presents the polycrystalline structure of ZnO, when oxygen content reduces, film presents Zn
3n
2or Zn
3p
2polycrystalline structure.So when atom phosphorus is less than 1%, film easily forms polycrystalline structure, the defect of film is many, and when atom phosphorus is greater than 10%, film is polycrystalline structure and has raised growth defect, and corresponding thin-film transistor drain current is large; When Nitrogen Atom is less than 10%, film easily forms polycrystalline structure, and the defect of film is many, and when Nitrogen Atom is greater than 22%, film is polycrystalline structure and has raised growth defect, and corresponding thin-film transistor drain current is large.
Nitrogen phosphorus oxygen zinc film in the present invention is amorphous state, and its surfacing adopts Accent HL5500PC type Hall effect test system and test carrier concentration and Hall mobility.Carrier concentration under optimal conditions is lower～and 10
17cm
-3, Hall mobility reaches 49cm
2/ Vs.
Another object of the present invention is the method for nitrogen phosphorus oxygen zinc film of manufacturing by magnetron sputtering in atmosphere reactive, atmosphere reactive by purity oxygen or pure nitrogen gas or any mixing of the two or the two with form any mixing of argon gas, as the mixture of nitrogen/argon gas, the mixture of oxygen/nitrogen/argon gas, the mixture of oxygen/nitrogen forms, the method of described sputter coating can make that different materials is made into target and be arranged on sputter simultaneously on different target position, by regulating the sputtering power of different target position, control the ratio of each atom in prepared film, or bi-material is wherein made into a target according to described atomic ratio, and then is arranged on different target position and implements cosputtering from other target, by regulating the sputtering power of different target position to control the ratio of each atom in prepared film.
Described target is ZnO target, P
2o
5target, Zn
3n
2target or Zn
3p
2target.
Adopt rf magnetron sputtering, the distance of target and substrate is 20-150mm, rf frequency 13.56MHz used, and the ratio of the various gases of atmosphere reactive is controlled by gas flowmeter.During sample grown, underlayer temperature remains in 25-100 ℃, at 0.5W/cm
2-5W/cm
2power density under implement sputter, the background vacuum of sputtering chamber is less than 1 * 10
-7holder, sputtering pressure is controlled between 0.1Pa-10.0Pa.
A thin-film transistor that adopts top gate structure, comprises substrate, is formed on source electrode, drain electrode and nitrogen phosphorus oxygen zinc semiconductor active layer on substrate, grid and gate insulator; Described source electrode contacts with described nitrogen phosphorus oxygen zinc semiconductor active layer respectively with drain electrode, described gate insulator covers on described nitrogen phosphorus oxygen zinc semiconductor active layer and described grid is formed on described gate insulator, channel region is between described source electrode and drain electrode, described grid and insulating barrier and channel region form autoregistration, and described nitrogen phosphorus oxygen zinc semiconductor active layer is formed by above-mentioned nitrogen phosphorus oxygen zinc film etching.
The advantage of this structure is that nitrogen phosphorus oxygen zinc semiconductor active layer is covered by gate insulator, can not be subject to the impact of environment or technological factor and not increase extra PROCESS FOR TREATMENT step.
Accompanying drawing explanation
Fig. 1 is the structure chart of nitrogen phosphorus oxygen zinc thin-film transistor prepared in example.
Embodiment
Preferred embodiment the invention will be further described to contrast accompanying drawing combination below.
The present invention mixes phosphorus and nitrogen in zinc oxide material simultaneously, and it consists of Zn
xp
yo
1-x-y-zn
z, wherein, 55%≤x≤65%, 1%≤y≤10%, 10%≤z≤22%.And by this nitrogen phosphorus oxygen zinc film of ion sputtering deposition, the thin-film transistor of simultaneously making for given thin-film material obtains high carrier mobility and high stability.
By ZnO target, P
2o
5target and Zn
3n
2be arranged on respectively three different target position sputters simultaneously, by regulating the sputtering power of different target position to control coating speed, make ZnO, P
2o
5with the sputter coating speed ratio of ZnN be 1:1:12, corresponding atomic ratio is about Zn:P:N=13:2:12.
ZnOPN adopts rf magnetron sputtering, and the distance of target and substrate is 60mm, rf frequency 13.56MHz used, and the mist of high pure nitrogen and oxygen of take is sputter gas (atmosphere reactive), the ratio of gas is controlled by gas flowmeter.The background vacuum of sputtering chamber is less than 1 * 10
-7holder, in order to prevent polluting, first carries out pre-sputtering 10min, and during sample grown, underlayer temperature remains on 25 ℃ of room temperatures, and oxygen flow is 5sccm, and nitrogen flow is 20sccm.At 0.8Pa pressure and 2W/cm
2power density under complete sputter coating.
The constituent content of prepared nitrogen phosphorus oxygen zinc film is measured by X ray electron spectrum (XPS), and wherein zinc content is 59%, and phosphorus content is 6%, and nitrogen content is 14%, and oxygen content is 21%.
Adopting Accent HL 5500PC type Hall effect test system and test film carrier concentration and Hall mobility, carrier concentration is lower～and 10
17cm
-3, Hall mobility is 30cm
2/ Vs.Film is amorphous state.On-off ratio reaches 10
7.
As shown in Figure 1, a kind of top-grate structure thin film transistor, comprise substrate 1, be formed on the source electrode 2 on substrate 1 and drain 3, be formed on source electrode 2, drain 3 and substrate 1 on nitrogen phosphorus oxygen zinc semiconductor active layer 4, gate insulator 5 and the grid on gate insulator 56 on nitrogen phosphorus oxygen zinc semiconductor active layer 4, channel region is at source electrode 2 and drain between 3, wherein, grid 6 can form autoregistration with insulating barrier 5 and channel region.In this structure, nitrogen phosphorus oxygen zinc semiconductor active layer is subject to dielectric protection layer, and the field-effect mobility of TFT reaches 37cm
2/ Vs
The manufacture method of the top grid nitrogen phosphorus oxygen zinc thin-film transistor of the present embodiment comprises the following steps:
(1) substrate 1 can be that glass, quartz, silicon chip or other flexible base, board are as plastics etc., depositing conducting layer on substrate 1, depositional mode can adopt thermal evaporation, electron beam evaporation, magnetron sputtering etc., conductive layer can be titanium, silver, gold, chromium, aluminium, copper, molybdenum, tantalum, tungsten etc. or nesa coating, also can be the alloy of these electric conducting materials, both can be single layer structure, can be also the sandwich construction forming with these conductive layers.The preferred magnetron sputtering Titanium Mo that adopts, conductive layer thickness is between 10nm-1000nm, and preferred thickness is 200nm, and the background vacuum pressure of sputter is less than 1 * 10
-6holder.
(2) adopt wet method or dry etching conductive layer to form source electrode 2 and drain electrode 3.
(3) afterwards source electrode 2, drain 3 and substrate 1 on according to above-mentioned process conditions deposition nitrogen phosphorus oxygen zinc semiconductive thin film, formed ZnOPN film thickness is 5-2000nm, preferably thickness is 50nm.
(4) on nitrogen phosphorus oxygen zinc semiconductive thin film, form grid insulating film, the depositional mode of grid insulating film can adopt PECVD, PLD, electron beam evaporation, magnetron sputtering and ALD, can be by silicon nitride (SiNx), silica (SiO
2), silicon oxynitride, aluminium oxide, yittrium oxide or H
fo
2deng making, optimally, adopt ALD technology, the a-SiOx grid insulating film of deposit thickness 100nm at room temperature, the background vacuum of deposition is less than 1 * 10
-6holder.
(5) on grid insulating film, form gate metal layer, the depositional mode of gate metal layer can adopt the technology such as thermal evaporation, electron beam evaporation, magnetron sputtering.
(6) adopt wet method or dry etching gate metal layer to form grid 6, then take grid 6 as mask, dry etching grid insulating film forms the gate insulator 5 consistent with grid 6 patterns.
(7) adopt wet etching nitrogen phosphorus oxygen zinc semiconductive thin film to form nitrogen phosphorus oxygen zinc semiconductor active layer 4.
Utilize the conventional adhesive in sputter field by two kinds of powder ZnO, P
2o
5according to mol ratio, 12:1 mixes, and the target atom of acquisition is than Zn:P=12:2, and all the other are oxygen.
ZnOPN adopts rf magnetron sputtering, and the distance of target and substrate is 60mm, rf frequency 13.56MHz used, and the mist of high pure nitrogen and oxygen of take is sputter gas, the ratio of gas is controlled by gas flowmeter.The background vacuum of sputtering chamber is less than 1 * 10
-7holder, pre-sputtering 10min.During sample grown, underlayer temperature remains on 25 ℃ of room temperatures, and oxygen flow is 2sccm, and nitrogen flow is 100sccm.At 1Pa pressure and 2.0W/cm
2power density under complete sputter coating.
The constituent content of prepared nitrogen phosphorus oxygen zinc film is measured by X ray electron spectrum (XPS), and wherein zinc content is 61%, and phosphorus content is 6.3%, and nitrogen content is 14.8%, and oxygen content is 17.9%.
Adopt Accent HL 5500PC type Hall effect test system and test carrier concentration and Hall mobility, carrier concentration is higher, is about 2.1 * 10
19cm
-3, Hall mobility is 55cm
2/ Vs.Film is amorphous state, the surfacing of amorphous ZnO PN film.According to the TFT structure in embodiment 1, field-effect mobility reaches 51cm
2/ Vs.
By ZnO target, Zn
3p
2target and Zn
3n
2target is arranged on respectively three different target position sputters simultaneously, by regulating the sputtering power of different target position to control coating speed, makes ZnO, Zn
3p
2target and Zn
3n
2the sputter coating speed ratio of target is 10:1:2, and corresponding atomic ratio is about Zn:P:N=15:2:2.
ZnOPN adopts rf magnetron sputtering, and the distance of each target and substrate is still 60mm, rf frequency 13.56MHz used, and the mist of high pure nitrogen and oxygen of take is sputter gas, the ratio of gas is controlled by gas flowmeter.The background vacuum of sputtering chamber is less than 1 * 10
-7holder, pre-sputtering 10min.During sample grown, underlayer temperature remains on 25 ℃ of room temperatures, and oxygen flow is 10sccm, and the flow of nitrogen is 50sccm, and argon flow amount is 30sccm.At 1Pa pressure and 1.5W/cm
2power density under complete cosputtering plated film.
The constituent content of prepared nitrogen phosphorus oxygen zinc film is measured by X ray electron spectrum (XPS), and wherein zinc content is 59%, and phosphorus content is 5.1%, and nitrogen content is 15%, and oxygen content is 21%.
Adopting Accent HL 5500PC type Hall effect test system and test carrier concentration and Hall mobility, carrier concentration is about～and 10
18cm
-3, Hall mobility is 60cm
2/ Vs.Film is amorphous state, the surfacing of amorphous ZnO PN film.According to the TFT structure in embodiment 1, field-effect mobility reaches 58cm
2/ Vs, on-off ratio reaches 10
6.
Above content is in conjunction with concrete preferred implementation further description made for the present invention, can not assert that specific embodiment of the invention is confined to these explanations.For those skilled in the art, without departing from the inventive concept of the premise, can also make some being equal to substitute or obvious modification, and performance or purposes identical, all should be considered as belonging to protection scope of the present invention.
Claims (7)
1. a nitrogen phosphorus oxygen zinc film, is characterized in that: described nitrogen phosphorus oxygen zinc film consist of Zn
xp
yo
1-x-y-zn
z, wherein, 55%≤x≤65%, 1%≤y≤10%, 10%≤z≤22%, the atom number percentage sum of each atom is 100%.
2. nitrogen phosphorus oxygen zinc film as claimed in claim 1, is characterized in that: 59%≤x≤61%, 5%≤y≤8%, 12%≤z≤15%.
3. the preparation method of the nitrogen phosphorus oxygen zinc film in a claim 1, it is characterized in that, comprise the steps: by magnetron sputtering, to manufacture nitrogen phosphorus oxygen zinc film in atmosphere reactive, described atmosphere reactive by purity oxygen or pure nitrogen gas or any mixing of the two or the two with form any mixing of argon gas, described magnetron sputtering is to contain zinc, phosphorus, oxygen, the target of nitrogen is arranged on sputter simultaneously on different target position, by regulating the sputtering power of different target position, control the coating speed of each target, thereby control the ratio of each atom in prepared nitrogen phosphorus oxygen zinc film, or the bi-material in the material that contains zinc, phosphorus, oxygen, nitrogen is made into a target according to described atomic ratio, and then be arranged on different target position and implement cosputtering from other target, by regulating the sputtering power of different target position to control the coating speed of each target, thereby control the ratio of each atom in prepared nitrogen phosphorus oxygen zinc film.
4. preparation method as claimed in claim 3, it is characterized in that: adopt rf magnetron sputtering, the distance of sputtering target material and substrate is 20-150mm, rf frequency 13.56MHz used, the ratio of the various gases of atmosphere reactive is controlled by gas flowmeter, during sample grown, underlayer temperature remains in 25-100 ℃, at 0.5W/cm
2-5W/cm
2power density under implement sputter, the background vacuum pressure of sputtering chamber is less than 1 * 10
-7holder, sputtering pressure is controlled between 0.1Pa-10.0Pa.
5. a thin-film transistor that adopts top gate structure, is characterized in that: comprise substrate, be formed on source electrode, drain electrode and nitrogen phosphorus oxygen zinc semiconductor active layer on substrate, grid and gate insulator; Described source electrode contacts with described nitrogen phosphorus oxygen zinc semiconductor active layer respectively with drain electrode, described gate insulator covers on described nitrogen phosphorus oxygen zinc semiconductor active layer and described grid is formed on described gate insulator, channel region is between described source electrode and drain electrode, described grid and insulating barrier and channel region form autoregistration, and described nitrogen phosphorus oxygen zinc semiconductor active layer is formed by nitrogen phosphorus oxygen zinc film etching claimed in claim 1.
6. thin-film transistor as claimed in claim 5, is characterized in that: the thickness of described nitrogen phosphorus oxygen zinc film is 5-2000nm.
7. thin-film transistor as claimed in claim 5, is characterized in that: the thickness of described nitrogen phosphorus oxygen zinc film is 50nm.
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| CN108461520A (en) * | 2018-01-09 | 2018-08-28 | 深圳市华星光电半导体显示技术有限公司 | A kind of OLED backboards and preparation method thereof |
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Cited By (3)
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| CN104538457A (en) * | 2015-01-15 | 2015-04-22 | 京东方科技集团股份有限公司 | Thin film transistor, manufacturing method of thin film transistor, array substrate and display device |
| WO2016112611A1 (en) * | 2015-01-15 | 2016-07-21 | 京东方科技集团股份有限公司 | Thin film transistor and manufacturing method thereof, array substrate, and display apparatus |
| CN108461520A (en) * | 2018-01-09 | 2018-08-28 | 深圳市华星光电半导体显示技术有限公司 | A kind of OLED backboards and preparation method thereof |
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