TW201902857A - Sintered oxide and semiconductor device - Google Patents

Sintered oxide and semiconductor device Download PDF

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TW201902857A
TW201902857A TW107134618A TW107134618A TW201902857A TW 201902857 A TW201902857 A TW 201902857A TW 107134618 A TW107134618 A TW 107134618A TW 107134618 A TW107134618 A TW 107134618A TW 201902857 A TW201902857 A TW 201902857A
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phase
sintered body
oxide
powder
oxide sintered
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TWI677484B (en
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宮永美紀
綿谷研一
曾我部浩一
粟田英章
栗巢賢一
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日商住友電氣工業股份有限公司
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Abstract

Provided are: a sintered oxide comprising indium, tungsten, and at least one of zinc and tin, and comprising, as a crystal phase, a double oxide crystal phase including tungsten, and at least one of zinc and tin; and a semiconductor device (10) comprising an oxide semiconductor film (14) formed by a sputtering method using the sintered oxide as a target.

Description

氧化物燒結體及半導體裝置Oxide sintered body and semiconductor device

本發明係關於一種可較佳地用作用以利用濺鍍法形成氧化物半導體膜之靶的氧化物燒結體及包含使用該氧化物燒結體而形成之氧化物半導體膜的半導體裝置。The present invention relates to an oxide sintered body which can be preferably used as a target for forming an oxide semiconductor film by a sputtering method, and a semiconductor device including an oxide semiconductor film formed using the oxide sintered body.

作為於液晶顯示裝置、薄膜EL(電致發光)顯示裝置、有機EL顯示裝置等中作為半導體裝置即TFT(薄膜電晶體)之通道層而發揮功能的半導體膜，先前主要使用非晶矽膜。 然而，近年來，作為此種半導體膜，以In-Ga-Zn系複合氧化物(以下，亦稱為IGZO)為主成分之氧化物半導體膜由於與非晶矽膜相比載子之移動率較大之優點而被矚目。 例如，日本專利特開2008-199005號公報(專利文獻1)揭示：該以IGZO為主成分之氧化物半導體膜係藉由使用靶之濺鍍法而形成。 又，日本專利特開2004-091265號公報(專利文獻2)中，作為於利用濺鍍法等形成氧化物半導體膜時可較佳地使用之材料，揭示主要包含銦且包含鎢之氧化物燒結體。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2008-199005號公報 [專利文獻2]日本專利特開2004-091265號公報An amorphous germanium film is mainly used as a semiconductor film that functions as a channel layer of a TFT (thin film transistor) which is a semiconductor device in a liquid crystal display device, a thin film EL (electroluminescence) display device, or an organic EL display device. However, in recent years, as a semiconductor film, an oxide semiconductor film containing In-Ga-Zn composite oxide (hereinafter also referred to as IGZO) as a main component has a carrier mobility as compared with an amorphous germanium film. The advantage of the larger is highlighted. For example, Japanese Laid-Open Patent Publication No. 2008-199005 (Patent Document 1) discloses that the oxide semiconductor film containing IGZO as a main component is formed by a sputtering method using a target. In the case of forming an oxide semiconductor film by a sputtering method or the like, a material which can be preferably used in the case of forming an oxide semiconductor film is disclosed in Japanese Laid-Open Patent Publication No. 2004-091265. body. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-199005 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2004-091265

[發明所欲解決之問題] 日本專利特開2008-199005號公報(專利文獻1)所揭示之包含以IGZO為主成分之氧化物半導體膜作為通道層之半導體裝置即TFT(薄膜電晶體)中，由於使用以市場價格較高之金屬鎵為原料之氧化鎵作為原料，因此，存在製造成本較高之問題。 又，日本專利特開2004-091265號公報(專利文獻2)所揭示之包含使用主要包含銦且包含鎢之氧化物燒結體而製作之氧化物半導體膜作為通道層之半導體裝置即TFT中，存在如下問題：OFF電流較高而為1×10-11 A左右，若不使驅動電壓高至70 V左右，則無法使ON電流相對於OFF電流之比充分地變大。 本發明之目的在於解決上述問題，提供一種可較佳地用於形成特性較高之半導體裝置之氧化物半導體膜的氧化物燒結體、包含使用該氧化物燒結體而形成之氧化物半導體膜之半導體裝置。 [解決問題之技術手段] 根據一態樣，本發明係一種氧化物燒結體，其係包含銦、鎢、與鋅及錫之至少1種者，且作為結晶相，包括包含鎢、與鋅及錫之至少1種之多氧化物結晶相。 又，根據另一態樣，本發明係一種半導體裝置，其包含使用根據上述態樣之氧化物燒結體作為靶利用濺鍍法所形成之氧化物半導體膜。 [發明之效果] 根據上述內容，可提供一種可較佳地用於形成特性較高之半導體裝置之氧化物半導體膜的氧化物燒結體、包含使用該氧化物燒結體而形成之氧化物半導體膜之半導體裝置。[Problems to be Solved by the Invention] In a TFT (Thin Film Transistor) which is a semiconductor device including an oxide semiconductor film containing IGZO as a channel layer, which is disclosed in Japanese Laid-Open Patent Publication No. 2008-199005 (Patent Document 1) Since gallium oxide using a metal gallium having a high market price as a raw material is used as a raw material, there is a problem that manufacturing cost is high. In the TFT which is a semiconductor device which uses an oxide semiconductor film which is mainly composed of an indium and contains an oxide sintered body of tungsten as a channel layer, is present in the TFT disclosed in Japanese Laid-Open Patent Publication No. 2004-091265 (Patent Document 2). The following problem is caused: the OFF current is high and is about 1 × 10 -11 A. If the driving voltage is not increased to about 70 V, the ratio of the ON current to the OFF current cannot be sufficiently increased. An object of the present invention is to provide an oxide sintered body which can be preferably used for forming an oxide semiconductor film of a semiconductor device having high characteristics, and an oxide semiconductor film formed using the oxide sintered body. Semiconductor device. [Technical means for solving the problem] According to one aspect, the present invention is an oxide sintered body comprising at least one of indium, tungsten, and zinc and tin, and as a crystalline phase, including tungsten, zinc, and At least one of the oxide crystal phases of tin. Moreover, according to another aspect, the present invention provides a semiconductor device comprising an oxide semiconductor film formed by a sputtering method using an oxide sintered body according to the above aspect as a target. [Effects of the Invention] According to the above, an oxide sintered body which can be preferably used for forming an oxide semiconductor film of a semiconductor device having high characteristics, and an oxide semiconductor film formed using the oxide sintered body can be provided. Semiconductor device.

＜本發明之實施形態之說明＞ 本發明之一實施形態即氧化物燒結體係包含銦、鎢、與鋅及錫之至少1種者，且作為結晶相，包括包含鎢、與鋅及錫之至少1種之多氧化物結晶相。本實施形態之氧化物燒結體由於包括包含鎢、與鋅及錫之至少1種之多氧化物結晶相作為結晶相，因此，於包含使用該氧化物燒結體而形成之氧化物半導體膜作為通道層之半導體裝置即TFT(薄膜電晶體)中，可使其OFF電流降低，並且可以較低之驅動電壓提高ON電流相對於OFF電流之比。又，可提高氧化物燒結體之導熱率。 本實施形態之氧化物燒結體可進而包括方鐵錳礦型相作為結晶相。藉此，於包含使用該氧化物燒結體而形成之氧化物半導體膜作為通道層之半導體裝置即TFT中，可使其OFF電流降低，並且可以較低之驅動電壓提高ON電流相對於OFF電流之比。又，可提高氧化物燒結體之導熱率。 於本實施形態之氧化物燒結體包括包含鎢、與鋅及錫之至少1種之多氧化物結晶相及方鐵錳礦型相作為結晶相之情形時，可使氧化物燒結體之一剖面中多氧化物結晶相及方鐵錳礦型相之合計面積相對於該剖面之面積的佔有率即雙相佔有率為95%以上且100%以下。藉此，於包含使用該氧化物燒結體而形成之氧化物半導體膜作為通道層之半導體裝置即TFT中，可使其OFF電流降低，且以較低之驅動電壓提高ON電流相對於OFF電流之比，並且可減少其特性之主面內之不均。又，可提高氧化物燒結體之導熱率。 於本實施形態之氧化物燒結體中，可使氧化物燒結體之一剖面中包含鎢、與鋅及錫之至少1種之多氧化物結晶相之面積相對於該剖面之面積的佔有率即多氧化物結晶相佔有率為大於0%且為50%以下。藉此，於包含使用該氧化物燒結體而形成之氧化物半導體膜作為通道層之半導體裝置即TFT中，可使其OFF電流降低，且以較低之驅動電壓提高ON電流相對於OFF電流之比，並且可減少其特性之主面內之不均。又，可提高氧化物燒結體之導熱率。 於本實施形態之氧化物燒結體中，多氧化物結晶相可包含選自由ZnWO4 型相、Zn2 W3 O8 型相、WSnO4 型相、WSn2 O5 型相、及WSn3 O6 型相所組成之群中之至少1種結晶相。藉此，於包含使用該氧化物燒結體而形成之氧化物半導體膜作為通道層之半導體裝置即TFT中，可使其OFF電流降低，並且可以較低之驅動電壓提高ON電流相對於OFF電流之比。又，可提高氧化物燒結體之導熱率。 於本實施形態之氧化物燒結體中，可使鎢相對於氧化物燒結體中所含之全部金屬元素及矽之含有率為0.5原子%以上且20原子%以下。藉此，於包含使用該氧化物燒結體而形成之氧化物半導體膜作為通道層之半導體裝置即TFT中，可以較低之驅動電壓提高ON電流相對於OFF電流之比。又，可提高氧化物半導體膜之成膜速度。 於本實施形態之氧化物燒結體中，可使選自由鋁、鈦、鉻、鎵、鉿、鋯、矽、鉬、釩、鈮、鉭、及鉍所組成之群中之至少1種元素相對於氧化物燒結體中所含之全部金屬元素及矽的含有率為0.1原子%以上且10原子%以下。藉此，於包含使用該氧化物燒結體而形成之氧化物半導體膜作為通道層之半導體裝置即TFT中，可使其OFF電流降低，並且可以較低之驅動電壓提高ON電流相對於OFF電流之比。 本發明之另一實施形態即半導體裝置係包含使用上述實施形態之氧化物燒結體作為靶利用濺鍍法所形成之氧化物半導體膜的半導體裝置。本實施形態之半導體裝置由於包含使用上述實施形態之氧化物燒結體作為靶利用濺鍍法所形成的氧化物半導體膜，故而具有較高之特性。 ＜本發明之實施形態之詳細內容＞ [實施形態1：氧化物燒結體] 本發明之一實施形態即氧化物燒結體係包含銦、鎢、與鋅及錫之至少1種者，且作為結晶相，包括包含鎢、與鋅及錫之至少1種之多氧化物結晶相。本實施形態之氧化物燒結體由於包括包含鎢、與鋅及錫之至少1種之多氧化物結晶相作為結晶相，因此，於包含使用該氧化物燒結體而形成之氧化物半導體膜作為通道層之半導體裝置即TFT(薄膜電晶體)中，可使其OFF電流降低，並且可以較低之驅動電壓提高ON電流相對於OFF電流之比。又，可提高氧化物燒結體之導熱率。 (含有In、W、與Zn及Sn之至少1種) 本實施形態之氧化物燒結體就於包含使用其而形成之氧化物半導體膜作為通道層之半導體裝置即TFT(薄膜電晶體)中使OFF電流降低，且以較低之驅動電壓提高ON電流相對於OFF電流之比，並且提高氧化物燒結體之導熱率之觀點而言，較佳為包含In(銦)、W(鎢)、與Zn(鋅)及Sn(錫)之至少1種，且以In為主成分。此處，所謂主成分，係指相對於本實施形態之氧化物燒結體中所含之金屬元素及Si(矽)，In之含有率為50原子%以上。 (多氧化物結晶相) 本實施形態之氧化物燒結體就於包含使用其而形成之氧化物半導體膜作為通道層之半導體裝置即TFT(薄膜電晶體)中使OFF電流降低，且以較低之驅動電壓提高ON電流相對於OFF電流之比，並且提高氧化物燒結體之導熱率之觀點而言，包括包含W、與Zn及Sn之至少1種之多氧化物結晶相作為結晶相。 多氧化物結晶相就於包含使用包含其之氧化物燒結體而形成之氧化物半導體膜作為通道層之半導體裝置即TFT(薄膜電晶體)中使OFF電流降低，且以較低之驅動電壓提高ON電流相對於OFF電流之比，並且提高氧化物燒結體之導熱率之觀點而言，較佳為包含選自由ZnWO4 型相、Zn2 W3 O8 型相、WSnO4 型相、WSn2 O5 型相、及WSn3 O6 型相所組成之群中之至少1種結晶相。該多氧化物結晶相係藉由X射線繞射測定進行鑑定。 ZnWO4 型相係指ZnWO4 相、於ZnWO4 相之一部分包含In、W及Zn以外之金屬元素及Si之至少1種之相、及於該等相中氧缺失一部分或過剩之相，為具有與ZnWO4 相同樣之晶體結構之相之總稱。Zn2 W3 O8 型相係指Zn2 W3 O8 相、於Zn2 W3 O8 相之一部分包含In、W及Zn以外之金屬元素及Si之至少1種之相、及於該等相中氧缺失一部分或過剩之相，為具有與Zn2 W3 O8 相同樣之晶體結構之相之總稱。WSnO4 型相係指WSnO4 相、於WSnO4 相之一部分包含In、W及Sn以外之金屬元素及Si之至少1種之相、及於該等相中氧缺失一部分或過剩之相，為具有與WSnO4 相同樣之晶體結構之相之總稱。WSn2 O5 型相係指WSn2 O5 相、於WSn2 O5 相之一部分包含In、W及Sn以外之金屬元素及Si之至少1種之相、及於該等相中氧缺失一部分或過剩之相，為具有與WSn2 O5 相同樣之晶體結構之相之總稱。WSn3 O6 型相係指WSn3 O6 相、於WSn3 O6 相之一部分包含In、W及Sn以外之金屬元素及Si之至少1種之相、及於該等相中氧缺失一部分或過剩之相，為具有與WSn3 O6 相同樣之晶體結構之相之總稱。該等多氧化物結晶相既可存在一者，亦可存在複數者。 此處，ZnWO4 相具有以空間群P12/c1(13)表示之晶體結構，為具有JCPDS Card之01-088-0251所規定之晶體結構之鎢酸鋅化合物結晶相。Zn2 W3 O8 相具有以空間群P63mc(186)表示之晶體結構，為C. R. Seances Acad. Sci. (Ser. C), 1970, pp271-136所揭示之鎢酸鋅化合物結晶相。WSnO4 結晶相具有以空間群Pnna(52)表示之晶體結構，為具有JCPDS Card之01-070-1049所規定之晶體結構之鎢酸錫化合物結晶相。WSn2 O5 相具有以空間群P121/c1(14)表示之晶體結構，為Inorg. Chem., (2007), 46, pp7005-7011所揭示之鎢酸錫化合物結晶相。WSn3 O6 相具有以空間群C12/c1(15)表示之晶體結構，為Inorg. Chem., (2007), 46, pp7005-7011所揭示之鎢酸錫化合物結晶相。 又，所謂於ZnWO4 相、Zn2 W3 O8 相、WSnO4 相、WSn2 O5 相、及WSn3 O6 相中之任一相之一部分包含構成該等多氧化物結晶相以外之金屬元素及Si之至少1種的相，亦可為於ZnWO4 相、Zn2 W3 O8 相、WSnO4 相、WSn2 O5 相、及WSn3 O6 相中之任一相之一部分固溶有構成該等多氧化物結晶相以外之金屬元素及Si之至少1種的晶體結構，例如，構成上述多氧化物結晶相以外之金屬元素及Si之至少1種既可固溶置換於ZnWO4 相、Zn2 W3 O8 相、WSnO4 相、WSn2 O5 相、及WSn3 O6 相中之任一相之W部位、及/或Zn部位或Sn部位之一部分，亦可插入至ZnWO4 相、Zn2 W3 O8 相、WSnO4 相、WSn2 O5 相、及WSn3 O6 相中之任一相之晶格間。 (方鐵錳礦型相) 於本實施形態之氧化物燒結體中，就於包含使用其而形成之氧化物半導體膜作為通道層之半導體裝置即TFT中使OFF電流降低，且以較低之驅動電壓提高ON電流相對於OFF電流之比，並且提高氧化物燒結體之導熱率之觀點而言，較佳為進而包含方鐵錳礦型相作為結晶相。 方鐵錳礦型相係指方鐵錳礦相、以及於方鐵錳礦相之一部分包含In及W以外之金屬元素及Si之至少1種之相，為具有與方鐵錳礦相同樣之晶體結構者之總稱。方鐵錳礦型相係藉由X射線繞射測定進行鑑定。此處，方鐵錳礦相係氧化銦(In2 O3 )之結晶相之1種，係指JCPDS Card之6-0416所規定之晶體結構，亦稱為稀土類氧化物C型相(或C-稀土結構相)。又，於方鐵錳礦相之一部分包含In及W以外之金屬元素及Si之至少1種之相亦可為於方鐵錳礦相之一部分固溶有In及W以外之金屬元素及Si之至少1種之晶體結構。 (多氧化物結晶相佔有率) 於本實施形態之氧化物燒結體中，就於包含使用其而形成之氧化物半導體膜作為通道層之半導體裝置即TFT(薄膜電晶體)中使OFF電流降低，且以較低之驅動電壓提高ON電流相對於OFF電流之比，並且提高氧化物燒結體之導熱率之觀點而言，氧化物燒結體之一剖面中包含鎢、與鋅及錫之至少1種之多氧化物結晶相之面積相對於該剖面之面積的佔有率即多氧化物結晶相佔有率較佳為大於0%且為50%以下，更佳為0.5%以上且30%以下，進而較佳為0.5%以上且15%以下。 多氧化物結晶相佔有率係以如下方式算出。首先，使用附帶能量分散型螢光X射線分析儀之掃描型二次電子顯微鏡(SEM-EDX)，利用SEM觀察經鏡面拋光加工之氧化物燒結體之剖面，利用EDX分析各相之組成。利用X射線繞射測定之θ-2θ法鑑定各相之晶體結構。藉由X射線繞射測定所鑑定之各相係金屬元素之組成比率不同。氧化物燒結體之相間之金屬元素之組成比率之差異與利用上述EDX所分析之相間之組成比率之差異的傾向一致。例如，於在X射線繞射測定中鑑定到In2 O3 相、WSn2 O5 相、及WSn3 O6 相之情形時，利用EDX之分析中，In2 O3 相中In比率(例如In/(In＋W＋Sn))變高，WSn2 O5 相及WSn3 O6 相中，W比率(例如W/(In＋W＋Sn))及/或Sn之比率(例如Sn/(In＋W＋Sn))變高。可利用SEM-EDX求出各燒結粉末之金屬比率，將In比率較高之區域判斷為In2 O3 相，將W比率及/或Sn比率變高之區域判斷為WSn2 O5 相及WSn3 O6 相。 (多氧化物結晶相及方鐵錳礦型相之雙相佔有率) 於本實施形態之氧化物燒結體包含多氧化物結晶相及方鐵錳礦型相作為結晶相之情形時，就於包含使用氧化物燒結體而形成之氧化物半導體膜作為通道層之半導體裝置即TFT中使OFF電流降低，且以較低之驅動電壓提高ON電流相對於OFF電流之比，減少其特性之主面內之不均，並且提高氧化物燒結體之導熱率之觀點而言，氧化物燒結體之一剖面中多氧化物結晶相及方鐵錳礦型相之合計面積相對於該剖面之面積的佔有率即雙相佔有率較佳為95%以上且100%以下，更佳為98%以上且100%以下。 此處，由於氧化物燒結體之方鐵錳礦型相之面積之佔有率係以與多氧化物結晶相之面積相對於氧化物燒結體之剖面之面積的佔有率即多氧化物結晶相佔有率同樣之方法算出，因此，多氧化物結晶相及方鐵錳礦型相之合計面積相對於剖面面積的佔有率即雙相佔有率係以與多氧化物結晶相之面積相對於氧化物燒結體之剖面面積之佔有率即多氧化物結晶相佔有率同樣之方法算出。 (鎢含有率) 於本實施形態之氧化物燒結體中，就於包含使用其而形成之氧化物半導體膜作為通道層之半導體裝置即TFT中，以較低之驅動電壓提高ON電流相對於OFF電流之比，並且提高氧化物半導體膜之成膜速度之觀點而言，鎢相對於氧化物燒結體中所含之全部金屬元素及Si之含有率較佳為0.5原子%以上且20原子%以下，更佳為0.5原子%以上且10原子%以下，進而較佳為7原子%以上且10原子%以下。 此處，氧化物燒結體中之W等金屬元素或Si之含量係藉由ICP(電感耦合電漿)質量分析進行測定。鎢含有率係W之含量相對於氧化物燒結體中之全部金屬元素及Si之合計含量之百分率。 (金屬元素及Si之含有率) 就於包含使用本實施形態之氧化物燒結體而形成之氧化物半導體膜作為通道層之半導體裝置即TFT中使OFF電流降低，並且以較低之驅動電壓提高ON電流相對於OFF電流之比之觀點而言，選自由Al(鋁)、Ti(鈦)、Cr(鉻)、Ga(鎵)、Hf(鉿)、Zr(鋯)、Si(矽)、Mo(鉬)、V(釩)、Nb(鈮)、Ta(鉭)、及Bi(鉍)所組成之群中之至少1種元素相對於氧化物燒結體中所含之全部金屬元素及Si(矽)之含有率較佳為0.1原子%以上且10原子%以下，更佳為0.1原子%以上且5原子%以下，進而較佳為0.1原子%以上且1原子%以下。 此處，於Al、Ti、Cr、Ga、Hf、Si、V、及Nb之至少1種元素之含有率為0.1原子%以上時，有包含使用該氧化物燒結體而獲得之氧化物半導體的半導體裝置之OFF電流變低之效果，但若該元素之含有率大於10原子%，則有半導體裝置之ON電流變低之傾向。 又，於Zr、Mo、Ta、及Bi之至少1種元素之含有率為0.1原子%以上時，有包含使用該氧化物燒結體而獲得之氧化物半導體的半導體裝置之ON電流變高之效果，但若該元素之含有率大於10原子%，則有半導體裝置之OFF電流變高之傾向。 使用本實施形態之氧化物燒結體而形成之氧化物半導體膜由於用作半導體裝置之半導體層，因此較理想為電阻率高於作為透明導電膜所期待之電阻率。具體而言，使用本實施形態之氧化物燒結體而形成之氧化物半導體膜較佳為電阻率為1×10-4 Ωcm以上。為此，氧化物燒結體中可含之Si之含有率以Si/In原子數比計較佳為小於0.007，又，氧化物燒結體中可含之Ti之含有率以Ti/In原子數比計較佳為小於0.004。 氧化物半導體膜之電阻率係藉由四端子法進行測定。利用濺鍍法形成Mo電極作為電極材，一面對外側之電極彼此掃描-40 V～+40 V之電壓而使電流流過，一面測定內側之電極間之電壓，算出電阻值。 (氧化物燒結體之製造方法) 本實施形態之氧化物燒結體之製造方法並無特別限制，但就高效率地進行製造之觀點而言，包括：製備原料粉末之混合物之步驟、對混合物進行煅燒之步驟、使煅燒粉末成形之步驟、及對成形體進行燒結之步驟。 1.準備原料粉末之步驟 作為氧化物燒結體之原料粉末，準備氧化銦粉末(例如In2 O3 粉末)、氧化鎢粉末(例如WO3 粉末)、氧化鋅粉末(例如ZnO粉末)、氧化錫粉末(例如SnO2 粉末)等構成氧化物燒結體之金屬元素及Si之氧化物粉末。再者，作為氧化鎢粉末，使用如WO2.72 粉末、WO2.0 粉末所表示之具有與WO3 粉末相比缺失氧之化學組成之粉末作為原料就獲得較高之導熱率方面而言，更為理想。就防止非刻意之金屬元素及Si向氧化物燒結體之混入而獲得穩定物性之觀點而言，原料粉末之純度較佳為99.9質量%以上之高純度。 2.製備原料粉末之一次混合物之步驟 首先，將上述原料粉末中之WO2.72 粉末或WO2.0 粉末、ZnO粉末、SnO2 粉末等氧化物粉末即原料粉末粉碎混合。此時，作為氧化物燒結體之結晶相，於欲獲得ZnWO4 型相之情形時，將WO2.72 粉末或WO2.0 粉末與ZnO粉末以按莫耳比計1：1之比率混合作為原料粉末，於欲獲得Zn2 W3 O8 型相之情形時，將WO2.72 粉末或WO2.0 粉末與ZnO粉末以按莫耳比計3：2之比率混合作為原料粉末，於欲獲得WSnO4 型相之情形時，將WO2.72 粉末或WO2.0 粉末與SnO2 粉末以按莫耳比計1：1之比率混合作為原料粉末，於欲獲得WSn2 O5 型相之情形時，將WO2.72 粉末或WO2.0 粉末與SnO2 粉末以按莫耳比計1：2之比率混合作為原料粉末，於欲獲得WSn3 O6 型相之情形時，將WO2.72 粉末或WO2.0 粉末與SnO2 粉末以按莫耳比計1：3之比率混合作為原料粉末。對於將原料粉末粉碎混合之方法，並無特別限制，可為乾式及濕式中之任一種方式，具體而言，利用球磨機、行星式球磨機、珠磨機等將原料粉末粉碎混合。以此方式，獲得原料粉末之一次混合物。此處，利用濕式之粉碎混合方式而獲得之混合物之乾燥可較佳地利用自然乾燥或噴霧乾燥器等乾燥方法。 3.對一次混合物進行煅燒之步驟 繼而，對所獲得之一次混合物進行煅燒。一次混合物之煅燒溫度並無特別限制，為了不使煅燒物之粒徑變得過大而燒結密度降低，較理想為未達1200℃，為了獲得作為結晶相之ZnWO4 型相、Zn2 W3 O8 型相、WSnO4 型相、WSn2 O5 型相、及/或WSn3 O6 型相作為煅燒物，較理想為500℃以上。為此，較佳為500℃以上且未達1000℃，更佳為550℃以上且900℃以下。以此方式，獲得包含作為結晶相之ZnWO4 型相、Zn2 W3 O8 型相、WSnO4 型相、WSn2 O5 型相、及/或WSn3 O6 型相之煅燒物。煅燒環境較佳為大氣環境、或含有25體積%以上氧氣之氧氣-氮氣混合環境。 4.製備原料粉末之二次混合物之步驟 繼而，藉由與上述相同之粉碎混合之方法，將所獲得之煅燒物與上述原料粉末中之In2 O3 粉末粉碎混合。以此方式，獲得原料粉末之二次混合物。 5.使二次混合物成形之步驟 繼而，使所獲得之二次混合物成形。使二次混合物成形之方法並無特別限制，就提高燒結密度方面而言，較佳為單軸壓製法、CIP(冷均壓處理)法、流延法等。以此方式，獲得成形體。 6.對成形體進行燒結之步驟 繼而，對所獲得之成形體進行燒結。成形體之燒結溫度並無特別限制，但就使燒結密度(指實際之燒結密度相對於理論密度之百分率)為90%以上而提高導熱率方面而言，較佳為1000℃以上且1500℃以下，更佳為1050℃以上且1200℃以下。又，燒結環境並無特別限制，但就防止氧化物燒結體之構成結晶之粒徑變大而防止龜裂產生方面、及導熱率提高方面而言，較佳為大氣壓-大氣環境、氧氣環境、氮氣-氧氣混合環境等，特佳為大氣壓-大氣環境。以此方式，獲得本實施形態之氧化物燒結體。 [實施形態2：半導體裝置] 參照圖1，本發明之另一實施形態即半導體裝置10包含使用實施形態1之氧化物燒結體作為靶利用濺鍍法所形成的氧化物半導體膜14。本實施形態之半導體裝置由於包含使用上述實施形態之氧化物燒結體作為靶利用濺鍍法所形成的氧化物半導體膜，故而具有較高之特性。 本實施形態之半導體裝置10並無特別限定，例如為包含使用實施形態1之氧化物燒結體作為靶利用濺鍍法所形成之氧化物半導體膜14作為通道層的半導體裝置即TFT(薄膜電晶體)。本實施形態之半導體裝置10之一例即TFT由於包含使用上述實施形態之氧化物燒結體作為靶利用濺鍍法所形成的氧化物半導體膜14作為通道層，因此，其OFF電流變低，並且於較低之驅動電壓下ON電流相對於OFF電流之比變高。 更具體而言，本實施形態之半導體裝置10即TFT如圖1所示，包括：基板11、配置於基板11上之閘極電極12、作為絕緣層而配置於閘極電極12上之閘極絕緣膜13、作為通道層而配置於閘極絕緣膜13上之氧化物半導體膜14、及以互不接觸之方式配置於氧化物半導體膜14上之源極電極15及汲極電極16。 (半導體裝置之製造方法) 參照圖2，本實施形態之半導體裝置10之製造方法並無特別限制，但就高效率地製造高特性之半導體裝置之觀點而言，較佳為包括：於基板11上形成閘極電極12之步驟(圖2(A))、於閘極電極12上形成閘極絕緣膜13作為絕緣層之步驟(圖2(B))、於閘極絕緣膜13上形成氧化物半導體膜14作為通道層之步驟(圖2(C))、及於氧化物半導體膜14上以互不接觸之方式形成源極電極15及汲極電極16之步驟(圖2(D))。 1.形成閘極電極之步驟 參照圖2(A)，於基板11上形成閘極電極12。基板11並無特別限制，但就提高透明性、價格穩定性、及表面平滑性方面而言，較佳為石英玻璃基板、無鹼玻璃基板、鹼玻璃基板等。閘極電極12並無特別限制，但就抗氧化性較高且電阻較低方面而言，較佳為Mo電極、Ti電極、W電極、Al電極、Cu電極等。閘極電極12之形成方法並無特別限制，但就可於基板之主面上大面積且均勻地形成方面而言，較佳為真空蒸鍍法、濺鍍法等。 2.形成閘極絕緣膜之步驟 參照圖2(B)，於閘極電極12上形成閘極絕緣膜13作為絕緣層。閘極絕緣膜13並無特別限制，但就絕緣性較高方面而言，較佳為SiOx 膜、SiNx 膜等。閘極絕緣膜13之形成方法並無特別限制，但就可於形成有閘極電極之基板之主面上大面積且均勻地形成方面及確保絕緣性方面而言，較佳為電漿CVD(化學氣相沈積)法等。 3.形成氧化物半導體膜之步驟 參照圖2(C)，於閘極絕緣膜13上形成氧化物半導體膜14作為通道層。就製造特性較高之半導體裝置10之觀點而言，氧化物半導體膜14係使用實施形態1之氧化物燒結體作為靶利用濺鍍法形成。此處，所謂濺鍍法，係指如下方法：於成膜室內使靶與基板對向而配置，對靶施加電壓，並以稀有氣體離子對靶之表面進行濺鍍，藉此，使構成靶之原子自靶釋出而堆積於基板(亦包括形成有上述閘極電極及閘極絕緣膜之基板)上，藉此形成由構成靶之原子構成之膜。 4.形成源極電極及汲極電極之步驟 參照圖2(D)，於氧化物半導體膜14上以互不接觸之方式形成源極電極15及汲極電極16。源極電極15及汲極電極16並無特別限制，但就抗氧化性較高、電阻較低、且與氧化物半導體膜之接觸電阻較低方面而言，較佳為Mo電極、Ti電極、W電極、Al電極、Cu電極等。形成源極電極15及汲極電極16之方法並無特別限制，但就可於形成有氧化物半導體膜之基板之主面上大面積且均勻地形成方面而言，較佳為真空蒸鍍法、濺鍍法等。以互不接觸之方式形成源極電極15及汲極電極16之方法並無特別限制，但就可於形成有氧化物半導體膜之基板之主面上形成大面積且均勻之源極電極及汲極電極之圖案方面而言，較佳為藉由使用光阻劑之蝕刻法而形成。 [實施例] (實施例1～實施例5) 1.粉末原料之準備 準備粒度為0.5 μm～1.2 μm且純度為99.9質量%之WO2.72 粉末、平均粒徑為1.0 μm且純度為99.99質量%之ZnO粉末、及平均粒徑為1.0 μm且純度為99.99質量%之In2 O3 粉末。 2.原料粉末之一次混合物之製備 首先，藉由將所準備之原料粉末中之WO2.72 粉末與ZnO粉末加入球磨機中並粉碎混合18小時，而製備原料粉末之一次混合物。將WO2.72 粉末與ZnO粉末之莫耳混合比設為WO2.7 ：ZnO＝1：1。作為上述粉碎混合時之分散介質，使用乙醇。使所獲得之原料粉末之一次混合物於大氣中乾燥。 3.一次混合物之煅燒 繼而，將所獲得之原料粉末之一次混合物加入氧化鋁製坩堝中，於大氣環境中以800℃之溫度煅燒8小時。關於煅燒溫度，若為形成結晶相之溫度，則就可使煅燒粉之粒徑儘可能小方面而言，以低為佳。以此方式獲得包含ZnWO4 型相作為結晶相之煅燒物。 4.原料粉末之二次混合物之製備 繼而，將所獲得之煅燒物與所準備之作為原料粉末之In2 O3 粉末一併投入坩堝(pot)，進而放入粉碎混合球磨機12小時而粉碎混合12小時，藉此製備原料粉末之二次混合物。關於煅燒物與In2 O3 粉末之混合比率，使WO2.72 粉末、ZnO粉末、及In2 O3 粉末之莫耳混合比成為如表1之實施例1～實施例5所示之比。作為上述粉碎混合時之分散介質，使用乙醇。所獲得之混合粉末係以噴霧乾燥進行乾燥。 5.二次混合物之成形 繼而，藉由壓製而使所獲得之二次混合物成形，進而，藉由CIP於室溫(5℃～30℃)之靜水中以190 MPa之壓力進行加壓成形，獲得直徑100 mm且厚度約9 mm之圓板狀成形體。 6.成形體之燒結 繼而，將所獲得之成形體於大氣環境中以表1之實施例1～實施例5所示之燒結溫度燒結8小時，藉此獲得氧化物燒結體。 7.氧化物燒結體之物性評價 所獲得之氧化物燒結體之結晶相之鑑定係自氧化物燒結體之一部分採取樣品，藉由利用粉末X射線繞射法之結晶分析而進行。作為X射線，使用Cu之Kα射線，進行結晶相之鑑定。將氧化物燒結體中存在之結晶相彙總於表1。 所獲得之氧化物燒結體之上述剖面中之多氧化物結晶相及作為方鐵錳礦型相之In2 O3 型相係以如下方式進行鑑定。 自氧化物燒結體之一部分採取樣品，研磨樣品之表面而使其變得平滑。繼而，使用SEM-EDX，利用SEM觀察樣品之表面，利用EDX分析各晶粒之金屬元素之組成比。根據該等晶粒之金屬元素之組成比之傾向對晶粒進行分組，結果，可分為Zn含有率及W含有率較高之晶粒組與Zn含有率及W含有率非常低而In含有率較高之晶粒組。結論為：Zn含有率及W含有率較高之晶粒組為作為多氧化物結晶相之ZnWO4 型相，Zn含有率及W含有率非常低而In含有率較高之晶粒組為作為方鐵錳礦型相之In2 O3 型相。 將氧化物燒結體之上述剖面中多氧化物結晶相之面積相對於該剖面面積的佔有率即多氧化物結晶相佔有率、以及氧化物燒結體之上述剖面中多氧化物結晶相及作為方鐵錳礦型相之In2 O3 型相之合計面積相對於該剖面面積的佔有率即雙相佔有率(以下，亦稱為多氧化物結晶相及作為方鐵錳礦型相之In2 O3 型相之雙相佔有率)彙總於表1。 所獲得之氧化物燒結體中之金屬元素及Si之含量係藉由ICP質量分析法進行測定。基於該等之含量，算出W相對於氧化物燒結體中所含之金屬元素及Si之含有率。將結果彙總於表1。再者，於表1中，「添加元素」意指選自Al(鋁)、Ti(鈦)、Cr(鉻)、Ga(鎵)、Hf(鉿)、Zr(鋯)、Si(矽)、Mo(鉬)、V(釩)、Nb(鈮)、Ta(鉭)、及Bi(鉍)之元素M，但實施例1～實施例5中，未使用添加元素。 所獲得之氧化物燒結體之導熱率係藉由雷射閃光法進行測定。自氧化物燒結體之一部分採取樣品，加工成直徑20 mm×厚度1 mm之圓板狀。為了使熱之吸收及輻射率變佳，於樣品表面塗佈碳噴霧後，對樣品表面照射脈衝雷射光。雷射光係波長為1.06 μm，脈衝寬度為0.4 ms。將於將實施例1之導熱率設為1時各實施例之相對導熱率彙總於表1。 8.靶之製作 將所獲得之氧化物燒結體加工成直徑3英吋(76.2 mm)且厚度5.0 mm之靶。 9.半導體裝置之製作 (1)閘極電極之形成 參照圖2(A)，首先，作為基板11而準備50 mm×50 mm×厚度0.6 mm之合成石英玻璃基板，於該基板11上利用濺鍍法形成厚度100 nm之Mo電極作為閘極電極12。 (2)閘極絕緣膜之形成 參照圖2(B)，繼而，於閘極電極12上利用電漿CVD法形成厚度200 nm之非晶質SiOx 膜作為閘極絕緣膜13。 (3)氧化物半導體膜之形成 參照圖2(C)，繼而，於閘極絕緣膜13上，藉由使用由實施例1～實施例5各者之氧化物燒結體加工而成之靶的RF(交流)磁控濺鍍法，而形成厚度35 nm之氧化物半導體膜14。此處，靶之直徑3英吋(76.2 mm)之平面為濺鍍面。 具體而言，於濺鍍裝置(未圖示)之成膜室內之進行水冷之基板保持器上，以露出閘極絕緣膜13之方式配置形成有上述閘極電極12及閘極絕緣膜13之基板11。以與閘極絕緣膜13對向之方式以90 mm之距離配置上述靶。將成膜室內設為6×10-5 Pa左右之真空度，以如下方式對靶進行濺鍍。 首先，於在閘極絕緣膜13與靶之間放入擋板之狀態下，向成膜室內導入Ar(氬)氣與O2 (氧)氣體之混合氣體直至成為0.5 Pa之壓力。混合氣體中之O2 氣體含有率為1體積%。對靶施加120 W之RF電力而引起濺鍍放電，藉此進行10分鐘靶表面之清潔(預濺鍍)。 繼而，對同一靶施加120 W之濺鍍RF電力，於將成膜室內之環境維持為原狀之狀態下，卸除上述擋板，藉此於閘極絕緣膜13上使氧化物半導體膜14成膜。再者，對於基板保持器，不特別施加偏壓電壓，僅進行水冷。此時，以氧化物半導體膜14之厚度成為35 nm之方式設定成膜時間。以此方式，藉由使用由氧化物燒結體加工而成之靶的RF(交流)磁控濺鍍法，而形成氧化物半導體膜14。該氧化物半導體膜14於半導體裝置10即TFT(薄膜電晶體)中作為通道層發揮功能。將各實施例中之氧化物半導體膜14之成膜速度彙總於表2。由表2可知，若W之含有率過高，則成膜速度降低。 繼而，藉由對所形成之氧化物半導體膜14之一部分進行蝕刻，而形成源極電極形成用部14s、汲極電極形成用部14d、及通道部14c。此處，將源極電極形成用部14s及汲極電極形成用部14d之主面之大小設為100 μm×100 μm，通道長度CL (參照圖1(A)及(B)以及圖2，所謂通道長度CL ，係指源極電極15與汲極電極16之間之通道部14c之距離)係設為40 μm，通道寬度CW (參照圖1(A)及(B)以及圖2，所謂通道寬度CW ，係指通道部14c之寬度)係設為50 μm。此時，圖1及圖2中所記載之通道部係以半導體裝置即薄膜電晶體(TFT)於75 mm×75 mm之基板主面內以3 mm間隔配置縱25個×橫25個之方式，於75 mm×75 mm之基板主面內以3 mm間隔配置有縱25個×橫25個。 具體而言，上述氧化物半導體膜14之一部分蝕刻係藉由如下方式進行：製備以體積比計為草酸：水＝1：10之蝕刻水溶液，並將依次形成有閘極電極12、閘極絕緣膜13及氧化物半導體膜14之基板11浸漬於該蝕刻水溶液中。此時，使蝕刻水溶液於熱浴內升溫至40℃。 (4)源極電極及汲極電極之形成 參照圖2(D)，繼而於氧化物半導體膜14上相互分離地形成源極電極15及汲極電極16。 具體而言，以僅氧化物半導體膜14之源極電極形成用部14s及汲極電極形成用部14d之主面露出之方式，於氧化物半導體膜14上塗佈光阻劑(未圖示)，並進行曝光及顯影。於氧化物半導體膜14之源極電極形成用部14s及汲極電極形成用部14d各者之主面上，利用濺鍍法相互分離地形成作為源極電極15之厚度為100 nm之Mo電極、與作為汲極電極16之厚度為100 nm之Mo電極。其後，將氧化物半導體膜14上之光阻劑剝離。作為此種源極電極、汲極電極之Mo電極係以半導體裝置即薄膜電晶體(TFT)於75 mm×75 mm之基板主面內以3 mm間隔配置縱25個×橫25個之方式，對應於一個通道部各配置1個源極電極、汲極電極。藉此，作為半導體裝置10，製造具備氧化物半導體膜14作為通道層之TFT。 繼而，將所獲得之半導體裝置10即TFT於氮氣環境中以300℃進行1小時熱處理。 10.半導體裝置之特性評價 以如下方式評價半導體裝置即TFT之特性。首先，使閘極電極、源極電極及汲極電極接觸測定針。對源極電極與汲極電極之間施加7 V之源極-汲極間電壓Vds ，並使施加於源極電極與閘極電極之間之源極-閘極間電壓Vgs 自-10 V變化至15 V，測定彼時之源極-汲極間電流Ids 。將源極-閘極間電壓Vgs 為-5 V時之源極-汲極間電流Ids 定義為OFF電流。將各實施例中之OFF電流之值彙總於表2。將源極-閘極間電壓Vgs 為15 V時之源極-汲極間電流Ids 定義為ON電流，將ON電流之值相對於OFF電流之值之比彙總於表2。 繼而，對於75 mm×75 mm之基板主面內以3 mm間隔配置有縱25個×橫25個之半導體裝置即TFT之全部，求出源極-汲極間電流Ids 為1×10-5 A時之源極-閘極間電壓Vgs ，將源極-閘極間電壓Vgs 之不均作為ΔVgs 彙總於表2。此處，不均ΔVgs 越小，意味著主面內之半導體裝置即TFT特性之不均越小。 [表1] ＊原料欄中，W表示WOx 粉末(x為2.0或2.72)，Z表示ZnO粉末，S表示SnO2 粉末，I表示In2 O3 粉末，M表示添加元素之氧化物粉末。＊結晶相欄中，I表示In2 O3 型相，A表示ZnWO4 型相，B表示Zn2 W3 O8 型相，C表示WSnO4 型相，D表示WSn2 O5 型相，E表示WSn3 O6 型相，G表示InGaZnO4 型相，W表示WO3 型相，Z表示ZnO型相，S表示SnO2 型相。 [表2] (實施例6～實施例8) 1.粉末原料之準備 準備粒度為0.5 μm～1.2 μm且純度為99.9質量%之WO2.0 粉末代替粒度為0.5 μm～1.2 μm且純度為99.9質量%之WO2.72 粉末，除此以外，以與實施例1～實施例5之情形相同之方式，準備WO2.0 粉末、ZnO粉末、及In2 O3 粉末。 2.原料粉末之一次混合物之製備 首先，向球磨機加入所準備之原料粉末中之WO2.0 粉末與ZnO粉末，進行18小時粉碎混合，藉此製備原料粉末之一次混合物。將WO2.0 粉末與ZnO粉末之莫耳混合比設為WO2.0 ：ZnO＝3：2。作為上述粉碎混合時之分散介質，使用乙醇。使所獲得之原料粉末之一次混合物於大氣中乾燥。 3.一次混合物之煅燒 繼而，將所獲得之原料粉末之一次混合物加入氧化鋁製坩堝中，於大氣環境中以950℃之溫度煅燒5小時。關於煅燒溫度，若為形成結晶相之溫度，則就可使煅燒粉之粒徑儘可能小方面而言，以低為佳。以此方式，獲得包含Zn2 W3 O8 型相作為結晶相之煅燒物。 4.原料粉末之二次混合物之製備 繼而，將所獲得之煅燒物與所準備之作為原料粉末之In2 O3 粉末一併投入坩堝，進而放入粉碎混合球磨機12小時，粉碎混合12小時，藉此製備原料粉末之二次混合物。關於煅燒物與In2 O3 粉末之混合比率，使WO2.0 粉末、ZnO粉末、及In2 O3 粉末之莫耳混合比成為如表1之實施例6～實施例8所示般之比。作為上述粉碎混合時之分散介質，使用乙醇。所獲得之混合粉末係以噴霧乾燥進行乾燥。 5.二次混合物之成形 繼而，使用所獲得之二次混合物，除此以外，以與實施例1～實施例5之情形相同之方式，獲得直徑100 mm且厚度約9 mm之圓板狀成形體。 6.成形體之燒結 繼而，將所獲得之成形體於大氣環境中以表1之實施例6～實施例8所示之燒結溫度燒結8小時，藉此獲得氧化物燒結體。 7.氧化物燒結體之物性評價 藉由利用粉末X射線繞射法之結晶分析進行。作為X射線，使用Cu之Kα射線，進行結晶相之鑑定，確認到作為方鐵錳礦型相之In2 O3 型相與作為多氧化物結晶相之Zn2 W3 O8 型相之存在。繼而，將利用SEM-EDX分組之Zn含有率及W含有率較高之晶粒組總結為作為多氧化物結晶相之Zn2 W3 O8 型相，除此以外，以與實施例1～實施例5之情形相同之方式進行多氧化物結晶相佔有率之算出、多氧化物結晶相及作為方鐵錳礦型相之In2 O3 型相之雙相佔有率之算出、W含有率之算出及相對導熱率之算出。將結果彙總於表1。再者，於實施例6～實施例8中，未使用添加元素。 8.靶之製作 以與實施例1～實施例5之情形相同之方式，將所獲得之氧化物燒結體加工成直徑3英吋(76.2 mm)且厚度5.0 mm之靶。 9.半導體裝置之製作 以與實施例1～實施例5之情形相同之方式製作半導體裝置即TFT。將各實施例中之氧化物半導體膜14之成膜速度彙總於表2。 10.半導體裝置之特性評價 以與實施例1～實施例5之情形相同之方式，作為半導體裝置即TFT之特性，測定源極-閘極間電壓Vgs 為-5 V時之源極-汲極間電流Ids 作為OFF電流之值、源極-閘極間電壓Vgs 為15 V時之源極-汲極間電流Ids 即ON電流之值相對於該OFF電流之值的比、源極-閘極間電壓Vgs 之不均ΔVgs 。將結果彙總於表2。 (實施例9～實施例13) 1.粉末原料之準備 準備平均粒徑為1.0 μm且純度為99.99質量%之SnO2 粉末代替平均粒徑為1.0 μm且純度為99.99質量%之ZnO粉末，除此以外，以與實施例1～實施例5之情形相同之方式，準備WO2.72 粉末、SnO2 粉末、及In2 O3 粉末。 2.原料粉末之一次混合物之製備 首先，將所準備之原料粉末中之WO2.72 粉末與SnO2 粉末加入球磨機中，並粉碎混合18小時，藉此製備原料粉末之一次混合物。將WO2.72 粉末與SnO2 粉末之莫耳混合比設為WO2.72 ：SnO2 ＝1：1。作為上述粉碎混合時之分散介質，使用乙醇。使所獲得之原料粉末之一次混合物於大氣中乾燥。 3.一次混合物之煅燒 繼而，將所獲得之原料粉末之一次混合物加入氧化鋁製坩堝中，於大氣環境中以650℃之溫度煅燒5小時。關於煅燒溫度，若為形成結晶相之溫度，則就可使煅燒粉之粒徑儘可能小方面而言，以低為佳。以此方式，獲得包含WSnO4 型相作為結晶相之煅燒物。 4.原料粉末之二次混合物之製備 繼而，將所獲得之煅燒物與所準備之作為原料粉末之In2 O3 粉末一併投入坩堝，進而放入粉碎混合球磨機12小時，粉碎混合12小時，藉此製備原料粉末之二次混合物。關於煅燒物與In2 O3 粉末之混合比率，使WO2.72 粉末、SnO2 粉末、及In2 O3 粉末之莫耳混合比成為如表1之實施例9～實施例13所示之比。作為上述粉碎混合時之分散介質，使用乙醇。所獲得之混合粉末係以噴霧乾燥進行乾燥。 5.二次混合物之成形 繼而，使用所獲得之二次混合物，除此以外，以與實施例1～實施例5之情形相同之方式獲得直徑100 mm且厚度約9 mm之圓板狀成形體。 6.成形體之燒結 繼而，將所獲得之成形體於大氣環境中以表1之實施例9～實施例13所示之燒結溫度燒結8小時，藉此獲得氧化物燒結體。 7.氧化物燒結體之物性評價 藉由利用粉末X射線繞射法之結晶分析進行。作為X射線，使用Cu之Kα射線，進行結晶相之鑑定，確認到作為方鐵錳礦型相之In2 O3 型相與作為多氧化物結晶相之WSnO4 型相之存在。繼而，使用SEM-EDX，分為Sn含有率及W含有率較高之晶粒組與Sn含有率及W含有率非常低而In含有率較高之晶粒組，結論為：Sn含有率及W含有率較高之晶粒組為作為多氧化物結晶相之WSnO4 型相，Sn含有率及W含有率非常低而In含有率較高之晶粒組為作為方鐵錳礦型相之In2 O3 型相，除此以外，以與實施例1～實施例5之情形相同之方式進行多氧化物結晶相佔有率之算出、多氧化物結晶相及作為方鐵錳礦型相之In2 O3 型相之雙相佔有率之算出、W含有率之算出及相對導熱率之算出。將結果彙總於表1。再者，於實施例9～實施例13中未使用添加元素。 8.靶之製作 以與實施例1～實施例5之情形相同之方式，將所獲得之氧化物燒結體加工成直徑3英吋(76.2 mm)且厚度5.0 mm之靶。 9.半導體裝置之製作 以與實施例1～實施例5之情形相同之方式製作半導體裝置即TFT。將各實施例中之氧化物半導體膜14之成膜速度彙總於表2。 10.半導體裝置之特性評價 以與實施例1～實施例5之情形相同之方式，作為半導體裝置即TFT之特性，測定源極-閘極間電壓Vgs 為-5 V時之源極-汲極間電流Ids 作為OFF電流之值、源極-閘極間電壓Vgs 為15 V時之源極-汲極間電流Ids 即ON電流之值相對於該OFF電流之值的比、源極-閘極間電壓Vgs 之不均ΔVgs 。將結果彙總於表2。 (實施例14～實施例16) 1.粉末原料之準備 以與實施例9～實施例13之情形相同之方式，準備WO2.72 粉末、SnO2 粉末、及In2 O3 粉末。 2.原料粉末之一次混合物之製備 首先，將所準備之原料粉末中之WO2.72 粉末與SnO2 粉末加入球磨機中，並粉碎混合18小時，藉此製備原料粉末之一次混合物。將WO2.72 粉末與SnO2 粉末之莫耳混合比設為WO2.72 ：SnO2 ＝1：2。作為上述粉碎混合時之分散介質，使用乙醇。使所獲得之原料粉末之一次混合物於大氣中乾燥。 3.一次混合物之煅燒 繼而，將所獲得之原料粉末之一次混合物加入氧化鋁製坩堝中，於大氣環境中以800℃之溫度煅燒5小時。關於煅燒溫度，若為形成結晶相之溫度，則就可使煅燒粉之粒徑儘可能小方面而言，以低為佳。以此方式，獲得包含WSn2 O5 型相作為結晶相之煅燒物。 4.原料粉末之二次混合物之製備 繼而，將所獲得之煅燒物與所準備之作為原料粉末之In2 O3 粉末一併投入坩堝，進而放入粉碎混合球磨機12小時，粉碎混合12小時，藉此製備原料粉末之二次混合物。關於煅燒物與In2 O3 粉末之混合比率，使WO2.72 粉末、SnO2 粉末、及In2 O3 粉末之莫耳混合比成為如表1之實施例14～實施例16所示之比。作為上述粉碎混合時之分散介質，使用乙醇。所獲得之混合粉末係以噴霧乾燥進行乾燥。 5.二次混合物之成形 繼而，使用所獲得之二次混合物，除此以外，以與實施例1～實施例5之情形相同之方式獲得直徑100 mm且厚度約9 mm之圓板狀成形體。 6.成形體之燒結 繼而，將所獲得之成形體於大氣環境中以表1之實施例14～實施例16所示之燒結溫度燒結8小時，藉此獲得氧化物燒結體。 7.氧化物燒結體之物性評價 藉由利用粉末X射線繞射法之結晶分析進行。作為X射線，使用Cu之Kα射線，進行結晶相之鑑定，確認到作為方鐵錳礦型相之In2 O3 型相與作為多氧化物結晶相之WSn2 O5 型相之存在。繼而，將利用SEM-EDX分組之Sn含有率及W含有率較高之晶粒組總結為作為多氧化物結晶相之WSn2 O5 型相，除此以外，以與實施例9～實施例13之情形相同之方式，進行多氧化物結晶相佔有率之算出、多氧化物結晶相及作為方鐵錳礦型相之In2 O3 型相之雙相佔有率之算出、W含有率之算出及相對導熱率之算出。將結果彙總於表1。再者，於實施例14～實施例16中未使用添加元素。 8.靶之製作 以與實施例1～實施例5之情形相同之方式，將所獲得之氧化物燒結體加工成直徑3英吋(76.2 mm)且厚度5.0 mm之靶。 9.半導體裝置之製作 以與實施例1～實施例5之情形相同之方式製作半導體裝置即TFT。將各實施例中之氧化物半導體膜14之成膜速度彙總於表2。 10.半導體裝置之特性評價 以與實施例1～實施例5之情形相同之方式，作為半導體裝置即TFT之特性，測定源極-閘極間電壓Vgs 為-5 V時之源極-汲極間電流Ids 作為OFF電流之值、源極-閘極間電壓Vgs 為15 V時之源極-汲極間電流Ids 即ON電流之值相對於該OFF電流之值的比、源極-閘極間電壓Vgs 之不均ΔVgs 。將結果彙總於表2。 (實施例17～實施例19) 1.粉末原料之準備 準備粒度為0.5 μm～1.2 μm且純度為99.9質量%之WO2.0 粉末代替粒度為0.5 μm～1.2 μm且純度為99.9質量%之WO2.72 粉末，除此以外，以與實施例9～實施例13之情形相同之方式，準備WO2.0 粉末、SnO2 粉末、及In2 O3 粉末。 2.原料粉末之一次混合物之製備 首先，將所準備之原料粉末中之WO2.0 粉末與SnO2 粉末加入球磨機中，並粉碎混合18小時，藉此製備原料粉末之一次混合物。將WO2.0 粉末與SnO2 粉末之莫耳混合比設為WO2.0 ：SnO2 ＝1：3。作為上述粉碎混合時之分散介質，使用乙醇。使所獲得之原料粉末之一次混合物於大氣中乾燥。 3.一次混合物之煅燒 繼而，將所獲得之原料粉末之一次混合物加入氧化鋁製坩堝中，於大氣環境中以950℃之溫度煅燒5小時。關於煅燒溫度，若為形成結晶相之溫度，則就可使煅燒粉之粒徑儘可能小方面而言，以低為佳。以此方式，獲得包含WSn3 O6 型相作為結晶相之煅燒物。 4.原料粉末之二次混合物之製備 繼而，將所獲得之煅燒物與所準備之作為原料粉末之In2 O3 粉末一併投入坩堝，進而放入粉碎混合球磨機12小時，粉碎混合12小時，藉此製備原料粉末之二次混合物。關於煅燒物與In2 O3 粉末之混合比率，使WO2.0 粉末、SnO2 粉末、及In2 O3 粉末之莫耳混合比成為如表1之實施例17～實施例19所示之比。作為上述粉碎混合時之分散介質，使用乙醇。所獲得之混合粉末係以噴霧乾燥進行乾燥。 5.二次混合物之成形 繼而，使用所獲得之二次混合物，除此以外，以與實施例1～實施例5之情形相同之方式獲得直徑100 mm且厚度約9 mm之圓板狀成形體。 6.成形體之燒結 繼而，將所獲得之成形體於大氣環境中以表1之實施例17～實施例19所示之燒結溫度燒結8小時，藉此獲得氧化物燒結體。 7.氧化物燒結體之物性評價 藉由利用粉末X射線繞射法之結晶分析進行。作為X射線，使用Cu之Kα射線，進行結晶相之鑑定，確認到作為方鐵錳礦型相之In2 O3 型相與作為多氧化物結晶相之WSn3 O6 型相之存在。繼而，將利用SEM-EDX分組之Sn含有率及W含有率較高之晶粒組總結為作為多氧化物結晶相之WSn3 O6 型相，除此以外，以與實施例9～實施例13之情形相同之方式，進行多氧化物結晶相佔有率之算出、多氧化物結晶相及作為方鐵錳礦型相之In2 O3 型相之雙相佔有率之算出、W含有率之算出及相對導熱率之算出。將結果彙總於表1。再者，於實施例17～實施例19中未使用添加元素。 8.靶之製作 以與實施例1～實施例5之情形相同之方式，將所獲得之氧化物燒結體加工成直徑3英吋(76.2 mm)且厚度5.0 mm之靶。 9.半導體裝置之製作 以與實施例1～實施例5之情形相同之方式製作半導體裝置即TFT。將各實施例中之氧化物半導體膜14之成膜速度彙總於表2。 10.半導體裝置之特性評價 以與實施例1～實施例5之情形相同之方式，作為半導體裝置即TFT之特性，測定源極-閘極間電壓Vgs 為-5 V時之源極-汲極間電流Ids 作為OFF電流之值、源極-閘極間電壓Vgs 為15 V時之源極-汲極間電流Ids 即ON電流之值相對於該OFF電流之值的比、源極-閘極間電壓Vgs 之不均ΔVgs 。將結果彙總於表2。 (實施例20～實施例36) 於製備原料粉末之二次混合物時，作為原料粉末，除煅燒物及In2 O3 粉末以外，如表3之實施例20～實施例36所示般添加包含添加元素之氧化物粉末(Al2 O3 、TiO2 、Cr2 O3 、Ga2 O3 、HfO2 、SiO2 、V2 O5 、Nb2 O3 、ZrO2 、MoO2 、Ta2 O3 、Bi2 O3 )，除此以外，以與實施例1～實施例19之情形相同之方式，製作氧化物燒結體。將包含添加元素之氧化物粉末之莫耳混合比率示於表3。將所獲得之氧化物燒結體加工成靶，製作包含藉由使用該靶之RF磁控濺鍍法而形成之氧化物半導體膜的半導體裝置即TFT。 將所獲得之氧化物燒結體之物性彙總於表3，將所獲得之半導體裝置即TFT之特性彙總於表4。物性及特性之測定方法與實施例1～實施例19相同。 [表3] ＊原料欄中，W表示WOx 粉末(x為2.0或2.72)，Z表示ZnO粉末，S表示SnO2 粉末，I表示In2 O3 粉末，M表示添加元素之氧化物粉末。 ＊結晶相欄中，I表示In2 O3 型相，A表示ZnWO4 型相，B表示Zn2 W3 O8 型相，C表示WSnO4 型相，D表示WSn2 O5 型相，E表示WSn3 O6 型相，G表示InGaZnO4 型相，W表示WO3 型相，Z表示ZnO型相，S表示SnO2 型相。 [表4] (比較例1～比較例2) 製作氧化物燒結體時，於製備原料粉末之混合物後，不進行煅燒而使原料粉末之混合物成形並進行燒結，除此以外，以與實施例1～實施例8或實施例9～實施例19之情形相同之方式，製作氧化物燒結體而加工成靶，製作包含藉由使用該靶之RF磁控濺鍍法而形成之氧化物半導體膜的半導體裝置即TFT。確認，藉由不進行煅燒而使原料粉末之混合物成形並進行燒結，而未生成多氧化物結晶相。比較例1～比較例2之間，WO2.72 粉末或WO2.0 粉末、ZnO粉末或SnO2 粉末、及In2 O3 粉末之莫耳混合比率不同。將氧化物燒結體之物性彙總於表3，將半導體裝置即TFT之特性彙總於表4。物性及特性之測定方法與實施例相同。 參照表1～表4，包含使用包含銦、鎢、與鋅及錫之至少1種、且包括包含鎢、與鋅及錫之至少1種之多氧化物結晶相作為結晶相之氧化物燒結體而形成之氧化物半導體膜作為通道層的半導體裝置即TFT(薄膜電晶體)中，可使OFF電流降低至未達1×10-11 A，並且以較低之驅動電壓將ON電流相對於OFF電流之比提高為數量級8(所謂數量級8，意指1×108 以上且未達1×109 ，以下相同)。又，可提高氧化物燒結體之導熱率。再者，於表2及表4中之ON電流相對於OFF電流之比之欄中，所謂數量級9，意指1×109 以上且未達1×1010 ，所謂數量級5，意指1×105 以上且未達1×106 。 應認為，此次所揭示之實施形態及實施例於所有方面均為例示，而並非限制性者。本發明之範圍由申請專利範圍所示而非上述之說明，意圖包括與申請專利範圍均等之意思及範圍內之全部變更。<Description of Embodiment of the Present Invention> An oxide sintering system according to an embodiment of the present invention includes at least one of indium, tungsten, and zinc and tin, and includes at least one of tungsten, zinc, and tin as a crystal phase. One type of multiple oxide crystalline phase. The oxide sintered body of the present embodiment includes a tungsten oxide film and a polycrystalline oxide crystal phase of at least one of zinc and tin as a crystal phase. Therefore, the oxide semiconductor film formed using the oxide sintered body is used as a channel. In a semiconductor device of a layer, that is, a TFT (Thin Film Transistor), the OFF current can be lowered, and the ratio of the ON current to the OFF current can be increased with a lower driving voltage. Further, the thermal conductivity of the oxide sintered body can be increased. The oxide sintered body of the present embodiment may further include a bixbyite type phase as a crystal phase. Thereby, in the TFT which is a semiconductor device including the oxide semiconductor film formed using the oxide sintered body as the channel layer, the OFF current can be lowered, and the lower driving voltage can be used to increase the ON current with respect to the OFF current. ratio. Further, the thermal conductivity of the oxide sintered body can be increased. When the oxide sintered body of the present embodiment includes tungsten, a polycrystalline oxide phase of at least one of zinc and tin, and a bixbyite phase as a crystal phase, the oxide sintered body can be partially cross-sectioned. The ratio of the total area of the polycrystalline crystalline phase and the bixbyite type phase to the area of the cross section, that is, the two-phase occupancy rate is 95% or more and 100% or less. Thereby, in the TFT which is a semiconductor device including the oxide semiconductor film formed using the oxide sintered body as the channel layer, the OFF current can be lowered, and the ON current can be increased with respect to the OFF current with a lower driving voltage. Ratio, and can reduce the unevenness in the main face of its characteristics. Further, the thermal conductivity of the oxide sintered body can be increased. In the oxide sintered body of the present embodiment, the area of the cross section of the oxide sintered body including tungsten, at least one of zinc and tin, and the area of the cross-sectional area can be occupied. The polycrystalline oxide crystal phase occupation ratio is more than 0% and is 50% or less. Thereby, in the TFT which is a semiconductor device including the oxide semiconductor film formed using the oxide sintered body as the channel layer, the OFF current can be lowered, and the ON current can be increased with respect to the OFF current with a lower driving voltage. Ratio, and can reduce the unevenness in the main face of its characteristics. Further, the thermal conductivity of the oxide sintered body can be increased. In the oxide sintered body of the present embodiment, the polycrystalline oxide phase may comprise selected from the group consisting of ZnWO 4 Phase, Zn 2 W 3 O 8 Phase, WSnO 4 Phase, WSn 2 O 5 Phase, and WSn 3 O 6 At least one crystal phase of the group consisting of the phases. Thereby, in the TFT which is a semiconductor device including the oxide semiconductor film formed using the oxide sintered body as the channel layer, the OFF current can be lowered, and the lower driving voltage can be used to increase the ON current with respect to the OFF current. ratio. Further, the thermal conductivity of the oxide sintered body can be increased. In the oxide sintered body of the present embodiment, the content of all the metal elements and antimony contained in the tungsten relative to the oxide sintered body is 0.5 atom% or more and 20 atom% or less. Thereby, in the TFT which is a semiconductor device including the oxide semiconductor film formed using the oxide sintered body as the channel layer, the ratio of the ON current to the OFF current can be increased with a lower driving voltage. Further, the film formation rate of the oxide semiconductor film can be increased. In the oxide sintered body of the present embodiment, at least one element selected from the group consisting of aluminum, titanium, chromium, gallium, lanthanum, zirconium, hafnium, molybdenum, vanadium, niobium, tantalum, and niobium may be relatively The content of all the metal elements and cerium contained in the oxide sintered body is 0.1 atom% or more and 10 atom% or less. Thereby, in the TFT which is a semiconductor device including the oxide semiconductor film formed using the oxide sintered body as the channel layer, the OFF current can be lowered, and the lower driving voltage can be used to increase the ON current with respect to the OFF current. ratio. A semiconductor device according to another embodiment of the present invention includes a semiconductor device using the oxide sintered body of the above-described embodiment as an oxide semiconductor film formed by sputtering. Since the semiconductor device of the present embodiment includes the oxide semiconductor film formed by the sputtering method using the oxide sintered body of the above-described embodiment as a target, it has high characteristics. <Details of the embodiment of the present invention> [Embodiment 1: Oxide sintered body] The oxide sintering system according to one embodiment of the present invention contains at least one of indium, tungsten, zinc, and tin, and serves as a crystal phase. The invention comprises a polycrystalline oxide phase comprising at least one of tungsten, zinc and tin. The oxide sintered body of the present embodiment includes a tungsten oxide film and a polycrystalline oxide crystal phase of at least one of zinc and tin as a crystal phase. Therefore, the oxide semiconductor film formed using the oxide sintered body is used as a channel. In a semiconductor device of a layer, that is, a TFT (Thin Film Transistor), the OFF current can be lowered, and the ratio of the ON current to the OFF current can be increased with a lower driving voltage. Further, the thermal conductivity of the oxide sintered body can be increased. (Inclusive of at least one of In, W, and Zn, and Sn) The oxide sintered body of the present embodiment is used in a TFT (thin film transistor) which is a semiconductor device including a channel layer formed using the oxide semiconductor film formed thereon. From the viewpoint of lowering the OFF current and increasing the ratio of the ON current to the OFF current with a lower driving voltage, and increasing the thermal conductivity of the oxide sintered body, it is preferable to include In (indium), W (tungsten), and At least one of Zn (zinc) and Sn (tin), and contains In as a main component. Here, the main component is a metal element and Si (yttrium) contained in the oxide sintered body of the present embodiment, and the content of In is 50 atom% or more. (Multi-Oxide Crystal Phase) The oxide sintered body of the present embodiment lowers the OFF current in the TFT (Thin Film Transistor) which is a semiconductor device including the oxide semiconductor film formed using the oxide semiconductor film as a channel layer, and is low. The driving voltage increases the ratio of the ON current to the OFF current, and increases the thermal conductivity of the oxide sintered body, and includes a polycrystalline oxide crystal phase containing at least one of W and Zn and Sn as a crystal phase. The polycrystalline oxide phase lowers the OFF current in a TFT (Thin Film Transistor) which is a semiconductor device including a oxide semiconductor film formed using the oxide sintered body containing the oxide sintered body, and is improved at a lower driving voltage. From the viewpoint of the ratio of the ON current to the OFF current and the improvement of the thermal conductivity of the oxide sintered body, it is preferred to include a material selected from the group consisting of ZnWO 4 Phase, Zn 2 W 3 O 8 Phase, WSnO 4 Phase, WSn 2 O 5 Phase, and WSn 3 O 6 At least one crystal phase of the group consisting of the phases. The polycrystalline crystalline phase was identified by X-ray diffraction measurements. ZnWO 4 Type phase system refers to ZnWO 4 Phase, in ZnWO 4 One of the phases includes a metal element other than In, W, and Zn, and at least one phase of Si, and a phase in which oxygen is missing or excess in the phases, having a phase with ZnWO 4 A general term for phases of the same crystal structure. Zn 2 W 3 O 8 Type phase system refers to Zn 2 W 3 O 8 Phase, in Zn 2 W 3 O 8 One of the phases includes a metal element other than In, W, and Zn, and at least one phase of Si, and a phase in which oxygen is missing or excess in the phases, and has a phase with Zn 2 W 3 O 8 A general term for phases of the same crystal structure. WSnO 4 Type phase system refers to WSnO 4 Phase, in WSnO 4 One of the phases includes a metal element other than In, W, and Sn, and at least one phase of Si, and a phase or excess phase in which oxygen is missing in the phase, having WSnO 4 A general term for phases of the same crystal structure. WSn 2 O 5 Type phase refers to WSn 2 O 5 Phase, in WSn 2 O 5 One of the phases includes a metal element other than In, W, and Sn, and at least one phase of Si, and a phase or excess phase in which oxygen is missing in the phase, having WSn 2 O 5 A general term for phases of the same crystal structure. WSn 3 O 6 Type phase refers to WSn 3 O 6 Phase, in WSn 3 O 6 One of the phases includes a metal element other than In, W, and Sn, and at least one phase of Si, and a phase or excess phase in which oxygen is missing in the phase, having WSn 3 O 6 A general term for phases of the same crystal structure. The plurality of oxide crystal phases may exist in one or plural. Here, ZnWO 4 The phase has a crystal structure represented by a space group P12/c1 (13) and is a crystal phase of a zinc tungstate compound having a crystal structure defined by 01-088-0251 of JCPDS Card. Zn 2 W 3 O 8 The phase has a crystal structure represented by a space group P63mc (186), which is a crystal phase of a zinc tungstate compound disclosed by CR Seances Acad. Sci. (Ser. C), 1970, pp271-136. WSnO 4 The crystal phase has a crystal structure represented by a space group Pnna (52) and is a crystal phase of a tin tungstate compound having a crystal structure as defined by J-07DS Card 01-070-1049. WSn 2 O 5 The phase has a crystal structure represented by a space group P121/c1 (14), which is a crystal phase of a tin tungstate compound disclosed by Inorg. Chem., (2007), 46, pp7005-7011. WSn 3 O 6 The phase has a crystal structure represented by a space group C12/c1 (15), and is a crystal phase of a tin tungstate compound disclosed by Inorg. Chem., (2007), 46, pp7005-7011. Also, the so-called ZnWO 4 Phase, Zn 2 W 3 O 8 Phase, WSnO 4 Phase, WSn 2 O 5 Phase, and WSn 3 O 6 One of the phases of the phase includes at least one of a metal element other than the crystal phase of the plurality of oxides and Si, and may also be a ZnWO 4 Phase, Zn 2 W 3 O 8 Phase, WSnO 4 Phase, WSn 2 O 5 Phase, and WSn 3 O 6 A crystal structure in which at least one of a metal element other than the polycrystalline oxide phase and Si is formed is partially dissolved in one of the phases, and for example, at least one of the metal elements other than the polycrystalline oxide phase and Si is formed. 1 kind of solid solution replacement in ZnWO 4 Phase, Zn 2 W 3 O 8 Phase, WSnO 4 Phase, WSn 2 O 5 Phase, and WSn 3 O 6 The W portion of any phase, and/or one of the Zn portion or the Sn portion, may also be inserted into the ZnWO 4 Phase, Zn 2 W 3 O 8 Phase, WSnO 4 Phase, WSn 2 O 5 Phase, and WSn 3 O 6 Between the crystal lattices of any phase in the phase. (Bronze-manganese-type phase) In the oxide sintered body of the present embodiment, the OFF current is lowered in the TFT which is a semiconductor device including the oxide semiconductor film formed using the oxide semiconductor film as a channel layer, and is driven at a lower level. From the viewpoint of increasing the ratio of the ON current to the OFF current and increasing the thermal conductivity of the oxide sintered body, it is preferable to further include a bixbyite type phase as a crystal phase. The bixbyite type phase system refers to a bixbyite phase, and a phase containing at least one of a metal element other than In and W and a part of Si in the side of the bixbyite phase, and is a crystal structure having the same crystal structure as the bixbyite phase. General name. The bixbyite type phase was identified by X-ray diffraction measurement. Here, the bixbyite phase system indium oxide (In 2 O 3 One of the crystalline phases refers to the crystal structure specified in 6-0416 of JCPDS Card, also known as the rare earth oxide C-type phase (or C-rare earth structural phase). Further, at least one of the metal elements other than In and W and the phase of Si may be one of the metal elements other than In and W and at least one of Si in one part of the side of the ferromanganese ore phase. The crystal structure of the species. (Multi-Oxide Crystal Phase Occupancy) In the oxide sintered body of the present embodiment, the OFF current is lowered in a TFT (Thin Film Transistor) which is a semiconductor device including a channel layer formed using the oxide semiconductor film formed thereon. From the viewpoint of increasing the ratio of the ON current to the OFF current with a lower driving voltage and increasing the thermal conductivity of the oxide sintered body, one section of the oxide sintered body contains at least 1 of tungsten, zinc, and tin. The occupancy ratio of the area of the polycrystalline oxide crystal phase to the area of the cross section, that is, the polycrystalline oxide crystal phase occupancy ratio is preferably more than 0% and is 50% or less, more preferably 0.5% or more and 30% or less. It is preferably 0.5% or more and 15% or less. The polycrystalline crystalline phase occupancy ratio was calculated as follows. First, a cross section of the mirror-polished oxide sintered body was observed by SEM using a scanning secondary electron microscope (SEM-EDX) equipped with an energy dispersive fluorescent X-ray analyzer, and the composition of each phase was analyzed by EDX. The crystal structure of each phase was identified by the θ-2θ method of X-ray diffraction measurement. The composition ratio of each phase metal element identified by X-ray diffraction measurement is different. The difference in the composition ratio of the metal elements between the phases of the oxide sintered body is consistent with the tendency of the difference in the composition ratio between the phases analyzed by the above EDX. For example, in the identification of X in the X-ray diffraction measurement 2 O 3 Phase, WSn 2 O 5 Phase, and WSn 3 O 6 In the case of the phase, using the analysis of EDX, In 2 O 3 In the phase, the In ratio (for example, In/(In+W+Sn)) becomes high, WSn 2 O 5 WSn 3 O 6 In the phase, the ratio of the W ratio (for example, W/(In+W+Sn)) and/or Sn (for example, Sn/(In+W+Sn)) becomes high. The metal ratio of each sintered powder can be obtained by SEM-EDX, and the region having a high In ratio can be judged as In. 2 O 3 Phase, the area where the W ratio and/or the Sn ratio becomes high is judged as WSn 2 O 5 WSn 3 O 6 phase. (The two-phase occupancy ratio of the polycrystalline oxide phase and the bixbyite type phase) When the oxide sintered body of the present embodiment contains a polycrystalline oxide phase and a bixbyite phase as a crystal phase, it is included In the TFT which is a semiconductor device in which the oxide semiconductor film is formed as a channel layer, the OFF current is lowered, and the ratio of the ON current to the OFF current is increased by a lower driving voltage, and the main surface of the characteristic is reduced. In view of the unevenness and the increase in the thermal conductivity of the oxide sintered body, the total area of the polycrystalline oxide phase and the bixbyite phase in the cross section of the oxide sintered body is doubled with respect to the area of the cross section. The phase occupancy ratio is preferably 95% or more and 100% or less, more preferably 98% or more and 100% or less. Here, the occupancy ratio of the area of the bixbyite type phase of the oxide sintered body is the occupancy ratio of the area of the polycrystalline oxide crystal phase to the area of the cross section of the oxide sintered body, that is, the polycrystalline oxide crystal phase occupation ratio. In the same manner, the ratio of the total area of the polycrystalline oxide phase and the bixbyite phase to the cross-sectional area, that is, the two-phase occupancy, is based on the area of the polycrystalline oxide phase with respect to the oxide sintered body. The occupation ratio of the cross-sectional area, that is, the occupancy rate of the polycrystalline oxide phase is calculated in the same manner. (Tungsten content rate) In the oxide sintered body of the present embodiment, the ON current is increased with respect to the lower driving voltage in the TFT which is a semiconductor device including the oxide semiconductor film formed using the oxide semiconductor film as the channel layer. From the viewpoint of the ratio of the current and the film formation rate of the oxide semiconductor film, the content of all the metal elements and Si contained in the oxide sintered body is preferably 0.5 atom% or more and 20 atom% or less. More preferably, it is 0.5 atomic% or more and 10 atomic% or less, More preferably, it is 7 atomic% or more and 10 atomic% or less. Here, the content of a metal element such as W or Si in the oxide sintered body is measured by mass spectrometry of ICP (inductively coupled plasma). The percentage of the tungsten content rate W to the total content of all the metal elements and Si in the oxide sintered body. (The content of the metal element and the Si) The OFF current is lowered in the TFT which is a semiconductor device including the oxide semiconductor film formed by using the oxide sintered body of the present embodiment as a channel layer, and is improved at a lower driving voltage. From the viewpoint of the ratio of the ON current to the OFF current, it is selected from the group consisting of Al (aluminum), Ti (titanium), Cr (chromium), Ga (gallium), Hf (yttrium), Zr (zirconium), and Si (lanthanum). At least one element selected from the group consisting of Mo (molybdenum), V (vanadium), Nb (铌), Ta (钽), and Bi (铋) with respect to all metal elements and Si contained in the oxide sintered body The content of (矽) is preferably 0.1 atom% or more and 10 atom% or less, more preferably 0.1 atom% or more and 5 atom% or less, still more preferably 0.1 atom% or more and 1 atom% or less. When the content ratio of at least one element of Al, Ti, Cr, Ga, Hf, Si, V, and Nb is 0.1 atom% or more, the oxide semiconductor obtained by using the oxide sintered body is included. The effect of the OFF current of the semiconductor device is low. However, if the content of the element is more than 10 atom%, the ON current of the semiconductor device tends to be low. In addition, when the content of at least one element of Zr, Mo, Ta, and Bi is 0.1 atom% or more, the ON current of the semiconductor device including the oxide semiconductor obtained by using the oxide sintered body is increased. However, if the content of the element is more than 10 atom%, the OFF current of the semiconductor device tends to increase. Since the oxide semiconductor film formed using the oxide sintered body of the present embodiment is used as a semiconductor layer of a semiconductor device, it is preferable that the specific resistance is higher than that expected as a transparent conductive film. Specifically, the oxide semiconductor film formed by using the oxide sintered body of the present embodiment preferably has a specific resistance of 1 × 10 -4 Ωcm or more. For this reason, the content of Si which may be contained in the oxide sintered body is preferably less than 0.007 in terms of the atomic ratio of Si/In, and the content of Ti contained in the oxide sintered body is calculated by the ratio of Ti/In atomic ratio. Good is less than 0.004. The resistivity of the oxide semiconductor film was measured by a four-terminal method. A Mo electrode was formed as an electrode material by a sputtering method, and a voltage of -40 V to +40 V was applied to the electrodes facing the outside to cause a current to flow, and the voltage between the electrodes on the inner side was measured to calculate a resistance value. (Manufacturing Method of Oxide Sintered Body) The method for producing the oxide sintered body of the present embodiment is not particularly limited. However, from the viewpoint of efficient production, the method includes the steps of preparing a mixture of raw material powders, and performing a mixture on the mixture. a step of calcining, a step of forming the calcined powder, and a step of sintering the formed body. 1. Step of preparing a raw material powder As a raw material powder of an oxide sintered body, an indium oxide powder (for example, In 2 O 3 Powder), tungsten oxide powder (eg WO 3 Powder), zinc oxide powder (such as ZnO powder), tin oxide powder (such as SnO) 2 A metal element constituting an oxide sintered body such as a powder) and an oxide powder of Si. Furthermore, as a tungsten oxide powder, use, for example, WO 2.72 Powder, WO 2.0 Powder has been expressed with WO 3 It is more preferable that the powder is used as a raw material in comparison with a powder having a chemical composition of oxygen deficiency to obtain a higher thermal conductivity. The purity of the raw material powder is preferably 99.9% by mass or more, from the viewpoint of preventing the incorporation of unintentional metal elements and Si into the oxide sintered body to obtain stable physical properties. 2. Step of preparing a primary mixture of raw material powders First, WO in the above raw material powder 2.72 Powder or WO 2.0 Powder, ZnO powder, SnO 2 An oxide powder such as powder, that is, a raw material powder, is pulverized and mixed At this time, as the crystal phase of the oxide sintered body, ZnWO is obtained. 4 In the case of a phase, WO 2.72 Powder or WO 2.0 Powder and ZnO powder are mixed as a raw material powder in a ratio of 1:1 in molar ratio, in order to obtain Zn 2 W 3 O 8 In the case of a phase, WO 2.72 Powder or WO 2.0 Powder and ZnO powder are mixed as a raw material powder in a ratio of 3:2 in molar ratio to obtain WSnO 4 In the case of a phase, WO 2.72 Powder or WO 2.0 Powder and SnO 2 The powder is mixed as a raw material powder in a ratio of 1:1 in molar ratio to obtain WSn. 2 O 5 In the case of a phase, WO 2.72 Powder or WO 2.0 Powder and SnO 2 The powder is mixed as a raw material powder in a ratio of 1:2 in molar ratio to obtain WSn. 3 O 6 In the case of a phase, WO 2.72 Powder or WO 2.0 Powder and SnO 2 The powder was mixed as a raw material powder at a ratio of 1:3 in molar ratio. The method of pulverizing and mixing the raw material powder is not particularly limited, and may be any of a dry type and a wet type. Specifically, the raw material powder is pulverized and mixed by a ball mill, a planetary ball mill, a bead mill or the like. In this way, a primary mixture of the raw material powders is obtained. Here, the drying of the mixture obtained by the wet pulverization mixing method can preferably be carried out by a drying method such as a natural drying or a spray dryer. 3. The step of calcining the primary mixture. The primary mixture obtained is then calcined. The calcination temperature of the primary mixture is not particularly limited, and the sintered density is lowered in order not to excessively increase the particle diameter of the calcined product, and it is preferably less than 1200 ° C in order to obtain ZnWO as a crystal phase. 4 Phase, Zn 2 W 3 O 8 Phase, WSnO 4 Phase, WSn 2 O 5 Phase, and / or WSn 3 O 6 The type phase is preferably 500 ° C or more as a calcined product. For this reason, it is preferably 500 ° C or more and less than 1000 ° C, more preferably 550 ° C or more and 900 ° C or less. In this way, ZnWO containing as a crystalline phase is obtained. 4 Phase, Zn 2 W 3 O 8 Phase, WSnO 4 Phase, WSn 2 O 5 Phase, and / or WSn 3 O 6 The calcined product of the type phase. The calcination environment is preferably an atmospheric environment or an oxygen-nitrogen mixed environment containing 25% by volume or more of oxygen. 4. Step of preparing a secondary mixture of raw material powders, and then, the obtained calcined product and In in the above raw material powder are obtained by the same pulverization and mixing as above. 2 O 3 The powder is pulverized and mixed. In this way, a secondary mixture of the raw material powders is obtained. 5. Step of Forming the Secondary Mixture Next, the obtained secondary mixture is shaped. The method of forming the secondary mixture is not particularly limited, and in terms of increasing the sintered density, a uniaxial pressing method, a CIP (cold equalizing treatment) method, a casting method, and the like are preferable. In this way, a shaped body is obtained. 6. Step of sintering the formed body Next, the obtained shaped body is sintered. The sintering temperature of the molded body is not particularly limited, but the sintered density (which is a percentage of the actual sintered density to the theoretical density) is 90% or more, and the thermal conductivity is preferably 1000 ° C or more and 1500 ° C or less. More preferably, it is 1050 ° C or more and 1200 ° C or less. In addition, the sintering environment is not particularly limited, but it is preferably an atmospheric pressure-atmosphere environment or an oxygen atmosphere in terms of preventing the particle size of the constituent crystal of the oxide sintered body from increasing, preventing the occurrence of cracks, and improving the thermal conductivity. Nitrogen-oxygen mixed environment, etc., especially for atmospheric pressure - atmospheric environment. In this manner, the oxide sintered body of the present embodiment is obtained. [Embodiment 2: Semiconductor device] Referring to Fig. 1, a semiconductor device 10 according to another embodiment of the present invention includes an oxide semiconductor film 14 formed by a sputtering method using the oxide sintered body of the first embodiment as a target. Since the semiconductor device of the present embodiment includes the oxide semiconductor film formed by the sputtering method using the oxide sintered body of the above-described embodiment as a target, it has high characteristics. The semiconductor device 10 of the present embodiment is not particularly limited, and is, for example, a TFT (thin film transistor) which is a semiconductor device including the oxide semiconductor film 14 formed by sputtering using the oxide sintered body of the first embodiment as a channel layer. ). The TFT which is an example of the semiconductor device 10 of the present embodiment includes the oxide semiconductor film 14 formed by the sputtering method using the oxide sintered body of the above-described embodiment as a channel layer. Therefore, the OFF current is lowered, and The ratio of the ON current to the OFF current becomes higher at the lower driving voltage. More specifically, as shown in FIG. 1, the TFT of the semiconductor device 10 of the present embodiment includes a substrate 11, a gate electrode 12 disposed on the substrate 11, and a gate disposed on the gate electrode 12 as an insulating layer. The insulating film 13, the oxide semiconductor film 14 disposed on the gate insulating film 13 as a channel layer, and the source electrode 15 and the drain electrode 16 which are disposed on the oxide semiconductor film 14 without contacting each other. (Manufacturing Method of Semiconductor Device) The method of manufacturing the semiconductor device 10 of the present embodiment is not particularly limited. However, from the viewpoint of efficiently manufacturing a semiconductor device having high characteristics, it is preferable to include the substrate 11 The step of forming the gate electrode 12 (FIG. 2(A)), the step of forming the gate insulating film 13 on the gate electrode 12 as an insulating layer (FIG. 2(B)), and forming an oxide on the gate insulating film 13 The step of forming the source electrode 15 and the drain electrode 16 on the oxide semiconductor film 14 as a channel layer (Fig. 2(C)) and on the oxide semiconductor film 14 (Fig. 2(D)) . 1. Step of Forming Gate Electrode Referring to FIG. 2(A), a gate electrode 12 is formed on the substrate 11. The substrate 11 is not particularly limited, but a quartz glass substrate, an alkali-free glass substrate, an alkali glass substrate, or the like is preferable in terms of improving transparency, price stability, and surface smoothness. The gate electrode 12 is not particularly limited, but a Mo electrode, a Ti electrode, a W electrode, an Al electrode, a Cu electrode, or the like is preferable in terms of high oxidation resistance and low electrical resistance. The method of forming the gate electrode 12 is not particularly limited, but a vacuum deposition method, a sputtering method, or the like is preferable in terms of large-area and uniform formation on the main surface of the substrate. 2. Step of Forming Gate Insulation Film Referring to FIG. 2(B), a gate insulating film 13 is formed as an insulating layer on the gate electrode 12. The gate insulating film 13 is not particularly limited, but in terms of high insulation, SiO is preferred. x Membrane, SiN x Membrane and the like. The method of forming the gate insulating film 13 is not particularly limited, but is preferably plasma CVD in terms of large-area and uniform formation on the main surface of the substrate on which the gate electrode is formed and in ensuring insulation. Chemical vapor deposition). 3. Step of Forming Oxide Semiconductor Film Referring to FIG. 2(C), an oxide semiconductor film 14 is formed as a channel layer on the gate insulating film 13. The oxide semiconductor film 14 is formed by a sputtering method using the oxide sintered body of the first embodiment as a target from the viewpoint of the semiconductor device 10 having high manufacturing characteristics. Here, the sputtering method refers to a method in which a target is placed opposite to a substrate in a deposition chamber, a voltage is applied to the target, and a surface of the target is sputtered with rare gas ions, thereby constituting the target. The atoms are released from the target and deposited on the substrate (including the substrate on which the gate electrode and the gate insulating film are formed), thereby forming a film composed of atoms constituting the target. 4. Step of Forming Source Electrode and Diode Electrode Referring to FIG. 2(D), the source electrode 15 and the drain electrode 16 are formed on the oxide semiconductor film 14 so as not to contact each other. The source electrode 15 and the drain electrode 16 are not particularly limited, but are preferably a Mo electrode, a Ti electrode, and the like, in terms of high oxidation resistance, low electrical resistance, and low contact resistance with an oxide semiconductor film. W electrode, Al electrode, Cu electrode, and the like. The method of forming the source electrode 15 and the drain electrode 16 is not particularly limited. However, in terms of large-area and uniform formation on the main surface of the substrate on which the oxide semiconductor film is formed, vacuum evaporation is preferred. , sputtering method, etc. The method of forming the source electrode 15 and the drain electrode 16 in a non-contact manner is not particularly limited, but a large-area and uniform source electrode and a crucible can be formed on the main surface of the substrate on which the oxide semiconductor film is formed. In terms of the pattern of the electrode, it is preferably formed by an etching method using a photoresist. [Examples] (Examples 1 to 5) 1. Preparation of powder raw material WO having a particle size of 0.5 μm to 1.2 μm and a purity of 99.9% by mass was prepared. 2.72 Powder, ZnO powder having an average particle diameter of 1.0 μm and a purity of 99.99% by mass, and In with an average particle diameter of 1.0 μm and a purity of 99.99% by mass 2 O 3 powder. 2. Preparation of a primary mixture of raw material powders First, by using the WO in the prepared raw material powder 2.72 The powder and ZnO powder were placed in a ball mill and pulverized and mixed for 18 hours to prepare a primary mixture of the raw material powder. Will WO 2.72 The molar mixing ratio of powder to ZnO powder is set to WO 2.7 :ZnO=1:1. As the dispersion medium at the time of the above pulverization and mixing, ethanol is used. The primary mixture of the obtained raw material powder was dried in the atmosphere. 3. Calcination of Primary Mixture Next, a primary mixture of the obtained raw material powder was placed in a crucible made of alumina and calcined at 800 ° C for 8 hours in an atmospheric environment. Regarding the calcination temperature, if the temperature at which the crystal phase is formed, the particle size of the calcined powder can be made as small as possible, and it is preferably as low as possible. Obtaining ZnWO in this way 4 The type phase is used as a calcined product of the crystal phase. 4. Preparation of Secondary Mixture of Raw Material Powder Next, the obtained calcined product and In prepared as a raw material powder 2 O 3 The powder was put into a pot together, and further placed in a pulverized mixing ball mill for 12 hours and pulverized and mixed for 12 hours, thereby preparing a secondary mixture of the raw material powder. About Calcined and In 2 O 3 Mix ratio of powder to make WO 2.72 Powder, ZnO powder, and In 2 O 3 The molar mixing ratio of the powders was as shown in Examples 1 to 5 of Table 1. As the dispersion medium at the time of the above pulverization and mixing, ethanol is used. The obtained mixed powder was dried by spray drying. 5. Formation of Secondary Mixture Next, the obtained secondary mixture is formed by pressing, and further, press forming is performed by CIP at room temperature (5 ° C to 30 ° C) in a static pressure of 190 MPa. A disk-shaped formed body having a diameter of 100 mm and a thickness of about 9 mm was obtained. 6. Sintering of the molded body Then, the obtained molded body was sintered in an atmosphere at a sintering temperature shown in Examples 1 to 5 of Table 1 for 8 hours, whereby an oxide sintered body was obtained. 7. Evaluation of Physical Properties of Oxide Sintered Body The identification of the crystal phase of the oxide sintered body obtained was carried out by taking a sample from a part of the oxide sintered body by crystallization analysis by a powder X-ray diffraction method. As the X-ray, the crystal phase was identified using Kα ray of Cu. The crystal phases present in the oxide sintered body are summarized in Table 1. a polycrystalline oxide crystal phase in the above cross section of the obtained oxide sintered body and In as a bixbyite type phase 2 O 3 The type system was identified as follows. A sample is taken from one part of the oxide sintered body, and the surface of the sample is ground to make it smooth. Then, using SEM-EDX, the surface of the sample was observed by SEM, and the composition ratio of the metal elements of each crystal grain was analyzed by EDX. The crystal grains are grouped according to the tendency of the composition ratio of the metal elements of the crystal grains, and as a result, the crystal group having a high Zn content and the W content ratio, the Zn content and the W content are extremely low, and the In content is included. A higher rate of grain groups. The conclusion is that the crystal group with higher Zn content and W content is ZnWO as the polycrystalline crystalline phase. 4 The phase group, the Zn content and the W content are very low, and the crystal group having a high In content is a square of the bixbyite type. 2 O 3 Type phase. The occupation ratio of the area of the polycrystalline oxide phase in the cross section of the oxide sintered body to the cross-sectional area, that is, the polycrystalline oxide crystal phase occupation ratio, and the polycrystalline oxide crystal phase in the cross section of the oxide sintered body and the square Iron-manganese type phase In 2 O 3 The occupation ratio of the total area of the type phase to the cross-sectional area, that is, the two-phase occupancy rate (hereinafter, also referred to as a polycrystalline oxide phase and a square as a bixbyite type phase) 2 O 3 The two-phase occupancy of the type phase is summarized in Table 1. The content of the metal element and Si in the obtained oxide sintered body was measured by ICP mass spectrometry. Based on the content, the content ratio of W to the metal element and Si contained in the oxide sintered body was calculated. The results are summarized in Table 1. Further, in Table 1, "additional element" means selected from the group consisting of Al (aluminum), Ti (titanium), Cr (chromium), Ga (gallium), Hf (yttrium), Zr (zirconium), and Si (lanthanum). Element M of Mo (molybdenum), V (vanadium), Nb (铌), Ta (钽), and Bi (铋), but in Examples 1 to 5, no additive element was used. The thermal conductivity of the obtained oxide sintered body was measured by a laser flash method. A sample was taken from one part of the oxide sintered body and processed into a disk shape of 20 mm in diameter × 1 mm in thickness. In order to improve the absorption of heat and the radiance, after the carbon spray is applied to the surface of the sample, the surface of the sample is irradiated with pulsed laser light. The laser light has a wavelength of 1.06 μm and a pulse width of 0.4 ms. The relative thermal conductivity of each of the examples will be summarized in Table 1 when the thermal conductivity of Example 1 is set to 1. 8. Preparation of target The obtained oxide sintered body was processed into a target having a diameter of 3 inches (76.2 mm) and a thickness of 5.0 mm. 9. Fabrication of Semiconductor Device (1) Formation of Gate Electrode Referring to FIG. 2(A), first, a synthetic quartz glass substrate of 50 mm × 50 mm × 0.6 mm in thickness was prepared as the substrate 11, and a sputtering was performed on the substrate 11. A Mo electrode having a thickness of 100 nm was formed as a gate electrode 12 by plating. (2) Formation of gate insulating film Referring to FIG. 2(B), an amorphous SiO having a thickness of 200 nm is formed on the gate electrode 12 by plasma CVD. x The film serves as a gate insulating film 13. (3) The formation of the oxide semiconductor film is as shown in Fig. 2(C), and then, on the gate insulating film 13, the target processed by the oxide sintered body of each of the first to fifth embodiments is used. RF (alternating) magnetron sputtering is performed to form an oxide semiconductor film 14 having a thickness of 35 nm. Here, the plane of the target having a diameter of 3 inches (76.2 mm) is a sputtered surface. Specifically, the gate electrode 12 and the gate insulating film 13 are disposed on the substrate holder that is water-cooled in the deposition chamber of the sputtering apparatus (not shown) so that the gate insulating film 13 is exposed. Substrate 11. The target was placed at a distance of 90 mm so as to face the gate insulating film 13. Set the film forming chamber to 6×10 -5 The degree of vacuum around Pa is used to sputter the target in the following manner. First, Ar (argon) gas and O are introduced into the film forming chamber in a state where a baffle is placed between the gate insulating film 13 and the target. 2 The mixed gas of (oxygen) gas is brought to a pressure of 0.5 Pa. O in the mixed gas 2 The gas content rate was 1% by volume. 120 W of RF power was applied to the target to cause a sputter discharge, whereby the target surface was cleaned (presputtered) for 10 minutes. Then, 120 W of the sputter RF power is applied to the same target, and the baffle is removed while maintaining the environment in the film formation chamber, whereby the oxide semiconductor film 14 is formed on the gate insulating film 13. membrane. Further, with respect to the substrate holder, no bias voltage was applied, and only water cooling was performed. At this time, the film formation time was set so that the thickness of the oxide semiconductor film 14 became 35 nm. In this manner, the oxide semiconductor film 14 is formed by RF (alternating current) magnetron sputtering using a target processed from an oxide sintered body. This oxide semiconductor film 14 functions as a channel layer in a TFT (thin film transistor) which is a semiconductor device 10 . The film formation rates of the oxide semiconductor films 14 in the respective examples are summarized in Table 2. As is clear from Table 2, if the content ratio of W is too high, the film formation rate is lowered. Then, a part of the formed oxide semiconductor film 14 is etched to form a source electrode forming portion 14s, a gate electrode forming portion 14d, and a channel portion 14c. Here, the size of the main surface of the source electrode forming portion 14s and the gate electrode forming portion 14d is set to 100 μm × 100 μm, and the channel length C L (Refer to Figures 1 (A) and (B) and Figure 2, the channel length C L , the distance between the source electrode 15 and the channel portion 14c between the drain electrodes 16 is set to 40 μm, and the channel width C is W (Refer to Figures 1(A) and (B) and Figure 2, the channel width C W The width of the channel portion 14c is set to 50 μm. In this case, the channel portions described in FIG. 1 and FIG. 2 are arranged in a main plane of 75 mm × 75 mm on the main surface of the substrate of 75 mm × 75 mm in a vertical direction of 25 × 25 horizontally. In the main surface of the substrate of 75 mm × 75 mm, 25 vertical × 25 horizontal are arranged at intervals of 3 mm. Specifically, a part of the etching of the oxide semiconductor film 14 is performed by preparing an etching aqueous solution having a volume ratio of oxalic acid:water=1:10, and sequentially forming the gate electrode 12 and insulating the gate. The substrate 11 of the film 13 and the oxide semiconductor film 14 is immersed in the etching solution. At this time, the etching aqueous solution was heated to 40 ° C in a heat bath. (4) Formation of Source Electrode and Diode Electrode Referring to FIG. 2(D), the source electrode 15 and the drain electrode 16 are formed separately from each other on the oxide semiconductor film 14. Specifically, a photoresist is applied onto the oxide semiconductor film 14 so that only the main surface of the source electrode forming portion 14s and the gate electrode forming portion 14d of the oxide semiconductor film 14 are exposed (not shown). ), and exposure and development. On the main surface of each of the source electrode forming portion 14s and the gate electrode forming portion 14d of the oxide semiconductor film 14, a Mo electrode having a thickness of 100 nm as the source electrode 15 is formed apart from each other by sputtering. And a Mo electrode having a thickness of 100 nm as the drain electrode 16. Thereafter, the photoresist on the oxide semiconductor film 14 is peeled off. The Mo electrode as the source electrode and the drain electrode is arranged in a vertical direction of 25 × 25 horizontally at a distance of 3 mm in a main surface of a substrate of 75 mm × 75 mm by a semiconductor device, that is, a thin film transistor (TFT). One source electrode and one drain electrode are disposed corresponding to one channel portion. Thereby, as the semiconductor device 10, a TFT including the oxide semiconductor film 14 as a channel layer is manufactured. Then, the obtained semiconductor device 10, that is, the TFT, was heat-treated at 300 ° C for 1 hour in a nitrogen atmosphere. 10. Evaluation of Characteristics of Semiconductor Device The characteristics of the TFT, which is a semiconductor device, were evaluated in the following manner. First, the gate electrode, the source electrode, and the drain electrode are brought into contact with the measuring needle. Apply a source-drain voltage of 7 V between the source and drain electrodes Ds And applying a source-gate voltage V between the source electrode and the gate electrode Gs From -10 V to 15 V, measure the source-drain current I at that time Ds . Source-gate voltage V Gs Source-drain current I at -5 V Ds Defined as OFF current. The values of the OFF currents in the respective examples are summarized in Table 2. Source-gate voltage V Gs Source-drain current I at 15 V Ds It is defined as the ON current, and the ratio of the value of the ON current to the value of the OFF current is summarized in Table 2. Then, the source-drain current I is obtained by arranging all of the TFTs of 25 semiconductors and 25 horizontal semiconductor devices at a distance of 3 mm in the main surface of the substrate of 75 mm × 75 mm. Ds 1×10 -5 Source-gate voltage V at time A Gs , the source-gate voltage V Gs Unevenness as ΔV Gs Summarized in Table 2. Here, the uneven ΔV Gs The smaller, the smaller the variation in the characteristics of the semiconductor device in the main surface, that is, the TFT. [Table 1] *In the raw material column, W indicates WO x Powder (x is 2.0 or 2.72), Z represents ZnO powder, and S represents SnO 2 Powder, I means In 2 O 3 Powder, M represents an oxide powder of an additive element. *In the crystal phase column, I means In 2 O 3 Form phase, A means ZnWO 4 Type phase, B means Zn 2 W 3 O 8 Phase, C means WSnO 4 Form phase, D means WSn 2 O 5 Type phase, E means WSn 3 O 6 Phase, G stands for InGaZnO 4 Type phase, W means WO 3 Type phase, Z represents ZnO type phase, S represents SnO 2 Type phase. [Table 2] (Examples 6 to 8) 1. Preparation of powder raw material WO having a particle size of 0.5 μm to 1.2 μm and a purity of 99.9% by mass 2.0 Powder instead of WO having a particle size of 0.5 μm to 1.2 μm and a purity of 99.9% by mass 2.72 Prepare WO in the same manner as in the case of Examples 1 to 5 except for the powder. 2.0 Powder, ZnO powder, and In 2 O 3 powder. 2. Preparation of Primary Mixture of Raw Material Powder First, the WO in the prepared raw material powder is added to the ball mill. 2.0 The powder and the ZnO powder were pulverized and mixed for 18 hours, whereby a primary mixture of the raw material powders was prepared. Will WO 2.0 The molar mixing ratio of powder to ZnO powder is set to WO 2.0 :ZnO=3:2. As the dispersion medium at the time of the above pulverization and mixing, ethanol is used. The primary mixture of the obtained raw material powder was dried in the atmosphere. 3. Calcination of the primary mixture Next, the primary mixture of the obtained raw material powder was added to a crucible made of alumina, and calcined at a temperature of 950 ° C for 5 hours in an atmospheric environment. Regarding the calcination temperature, if the temperature at which the crystal phase is formed, the particle size of the calcined powder can be made as small as possible, and it is preferably as low as possible. In this way, obtaining Zn 2 W 3 O 8 The type phase is used as a calcined product of the crystal phase. 4. Preparation of Secondary Mixture of Raw Material Powder Next, the obtained calcined product and In prepared as a raw material powder 2 O 3 The powder was put together in a crucible, and further placed in a pulverized mixing ball mill for 12 hours, and pulverized and mixed for 12 hours, thereby preparing a secondary mixture of the raw material powder. About Calcined and In 2 O 3 Mix ratio of powder to make WO 2.0 Powder, ZnO powder, and In 2 O 3 The molar mixing ratio of the powder was as shown in Examples 6 to 8 of Table 1. As the dispersion medium at the time of the above pulverization and mixing, ethanol is used. The obtained mixed powder was dried by spray drying. 5. Formation of Secondary Mixture Subsequently, using the obtained secondary mixture, a disk-shaped forming having a diameter of 100 mm and a thickness of about 9 mm was obtained in the same manner as in the case of Examples 1 to 5. body. 6. Sintering of the formed body Then, the obtained molded body was sintered in an atmosphere at a sintering temperature shown in Examples 6 to 8 of Table 1 for 8 hours, whereby an oxide sintered body was obtained. 7. Evaluation of physical properties of the oxide sintered body was carried out by crystallization analysis by a powder X-ray diffraction method. As the X-ray, the K-ray of Cu was used to identify the crystal phase, and it was confirmed that it was in the form of a bixbyite type phase. 2 O 3 Type phase and Zn as a crystalline phase of polyoxide 2 W 3 O 8 The existence of the type phase. Then, a group of crystal grains having a higher Zn content and a higher W content by SEM-EDX grouping is summarized as Zn as a polycrystalline oxide phase. 2 W 3 O 8 In the same manner as in the case of Examples 1 to 5, the calculation of the occupancy rate of the polycrystalline crystal phase, the polycrystalline oxide phase, and the ingot as the bixbyite type phase were carried out in the same manner as in the case of the first embodiment. 2 O 3 Calculation of the two-phase occupancy of the phase, calculation of the W content, and calculation of the relative thermal conductivity. The results are summarized in Table 1. Further, in Examples 6 to 8, no additive element was used. 8. Preparation of Target The obtained oxide sintered body was processed into a target having a diameter of 3 inches (76.2 mm) and a thickness of 5.0 mm in the same manner as in the case of Examples 1 to 5. 9. Fabrication of Semiconductor Device A TFT which is a semiconductor device was produced in the same manner as in the case of Examples 1 to 5. The film formation rates of the oxide semiconductor films 14 in the respective examples are summarized in Table 2. 10. Evaluation of Characteristics of Semiconductor Device The source-gate voltage V was measured as a characteristic of a TFT which is a semiconductor device in the same manner as in the first to fifth embodiments. Gs Source-drain current I at -5 V Ds As the value of the OFF current, the source-gate voltage V Gs Source-drain current I at 15 V Ds That is, the ratio of the value of the ON current to the value of the OFF current, and the voltage between the source and the gate V Gs Uneven ΔV Gs . The results are summarized in Table 2. (Examples 9 to 13) 1. Preparation of powder raw material SnO having an average particle diameter of 1.0 μm and a purity of 99.99% by mass was prepared. 2 Preparation of WO in the same manner as in the case of Examples 1 to 5 except that the powder was used instead of the ZnO powder having an average particle diameter of 1.0 μm and a purity of 99.99% by mass. 2.72 Powder, SnO 2 Powder, and In 2 O 3 powder. 2. Preparation of a primary mixture of raw material powders First, the WO in the prepared raw material powder 2.72 Powder and SnO 2 The powder was added to a ball mill and pulverized and mixed for 18 hours, whereby a primary mixture of the raw material powders was prepared. Will WO 2.72 Powder and SnO 2 The molar mixing ratio of the powder is set to WO 2.72 :SnO 2 =1:1. As the dispersion medium at the time of the above pulverization and mixing, ethanol is used. The primary mixture of the obtained raw material powder was dried in the atmosphere. 3. Calcination of Primary Mixture Next, a primary mixture of the obtained raw material powder was placed in a crucible made of alumina and calcined at a temperature of 650 ° C for 5 hours in an atmospheric environment. Regarding the calcination temperature, if the temperature at which the crystal phase is formed, the particle size of the calcined powder can be made as small as possible, and it is preferably as low as possible. In this way, get WSnO 4 The type phase is used as a calcined product of the crystal phase. 4. Preparation of Secondary Mixture of Raw Material Powder Next, the obtained calcined product and In prepared as a raw material powder 2 O 3 The powder was put together in a crucible, and further placed in a pulverized mixing ball mill for 12 hours, and pulverized and mixed for 12 hours, thereby preparing a secondary mixture of the raw material powder. About Calcined and In 2 O 3 Mix ratio of powder to make WO 2.72 Powder, SnO 2 Powder, and In 2 O 3 The molar mixing ratio of the powders was as shown in Examples 9 to 13 of Table 1. As the dispersion medium at the time of the above pulverization and mixing, ethanol is used. The obtained mixed powder was dried by spray drying. 5. Formation of secondary mixture A disk-shaped formed body having a diameter of 100 mm and a thickness of about 9 mm was obtained in the same manner as in the case of Examples 1 to 5, except that the obtained secondary mixture was used. . 6. Sintering of the molded body Then, the obtained molded body was sintered in an atmosphere at a sintering temperature shown in Examples 9 to 13 of Table 1 for 8 hours, whereby an oxide sintered body was obtained. 7. Evaluation of physical properties of the oxide sintered body was carried out by crystallization analysis by a powder X-ray diffraction method. As the X-ray, the K-ray of Cu was used to identify the crystal phase, and it was confirmed that it was in the form of a bixbyite type phase. 2 O 3 Type phase and WSnO as a crystalline phase of polyoxide 4 The existence of the type phase. Then, using SEM-EDX, it is divided into a crystal group having a high Sn content and a W content, a crystal grain group having a very low Sn content and a W content, and a high In content, and the conclusion is: Sn content and The group of grains with a higher W content is WSnO which is a crystalline phase of polyoxide. 4 The phase group, the Sn content and the W content is very low, and the crystal group having a high In content is a square of the bixbyite type. 2 O 3 In the same manner as in the case of Examples 1 to 5, the calculation of the occupancy rate of the polycrystalline crystal phase, the polycrystalline oxide phase, and the ingot as the bixbyite type phase were carried out in the same manner as in the case of the first embodiment. 2 O 3 Calculation of the two-phase occupancy of the phase, calculation of the W content, and calculation of the relative thermal conductivity. The results are summarized in Table 1. Further, in Examples 9 to 13, no additive element was used. 8. Preparation of Target The obtained oxide sintered body was processed into a target having a diameter of 3 inches (76.2 mm) and a thickness of 5.0 mm in the same manner as in the case of Examples 1 to 5. 9. Fabrication of Semiconductor Device A TFT which is a semiconductor device was produced in the same manner as in the case of Examples 1 to 5. The film formation rates of the oxide semiconductor films 14 in the respective examples are summarized in Table 2. 10. Evaluation of Characteristics of Semiconductor Device The source-gate voltage V was measured as a characteristic of a TFT which is a semiconductor device in the same manner as in the first to fifth embodiments. Gs Source-drain current I at -5 V Ds As the value of the OFF current, the source-gate voltage V Gs Source-drain current I at 15 V Ds That is, the ratio of the value of the ON current to the value of the OFF current, and the voltage between the source and the gate V Gs Uneven ΔV Gs . The results are summarized in Table 2. (Examples 14 to 16) 1. Preparation of powder raw materials WO was prepared in the same manner as in the case of Examples 9 to 13. 2.72 Powder, SnO 2 Powder, and In 2 O 3 powder. 2. Preparation of a primary mixture of raw material powders First, the WO in the prepared raw material powder 2.72 Powder and SnO 2 The powder was added to a ball mill and pulverized and mixed for 18 hours, whereby a primary mixture of the raw material powders was prepared. Will WO 2.72 Powder and SnO 2 The molar mixing ratio of the powder is set to WO 2.72 :SnO 2 =1:2. As the dispersion medium at the time of the above pulverization and mixing, ethanol is used. The primary mixture of the obtained raw material powder was dried in the atmosphere. 3. Calcination of Primary Mixture Next, a primary mixture of the obtained raw material powder was placed in a crucible made of alumina and calcined at 800 ° C for 5 hours in an atmospheric environment. Regarding the calcination temperature, if the temperature at which the crystal phase is formed, the particle size of the calcined powder can be made as small as possible, and it is preferably as low as possible. In this way, get WSn 2 O 5 The type phase is used as a calcined product of the crystal phase. 4. Preparation of Secondary Mixture of Raw Material Powder Next, the obtained calcined product and In prepared as a raw material powder 2 O 3 The powder was put together in a crucible, and further placed in a pulverized mixing ball mill for 12 hours, and pulverized and mixed for 12 hours, thereby preparing a secondary mixture of the raw material powder. About Calcined and In 2 O 3 Mix ratio of powder to make WO 2.72 Powder, SnO 2 Powder, and In 2 O 3 The molar mixing ratio of the powders was as shown in Examples 14 to 16 of Table 1. As the dispersion medium at the time of the above pulverization and mixing, ethanol is used. The obtained mixed powder was dried by spray drying. 5. Formation of secondary mixture A disk-shaped formed body having a diameter of 100 mm and a thickness of about 9 mm was obtained in the same manner as in the case of Examples 1 to 5, except that the obtained secondary mixture was used. . 6. Sintering of the molded body Then, the obtained molded body was sintered in an atmosphere at a sintering temperature shown in Examples 14 to 16 of Table 1 for 8 hours, whereby an oxide sintered body was obtained. 7. Evaluation of physical properties of the oxide sintered body was carried out by crystallization analysis by a powder X-ray diffraction method. As the X-ray, the K-ray of Cu was used to identify the crystal phase, and it was confirmed that it was in the form of a bixbyite type phase. 2 O 3 Form phase and WSn as a crystalline phase of polyoxide 2 O 5 The existence of the type phase. Then, a group of crystal grains having a higher Sn content and a higher W content by SEM-EDX grouping is summarized as WSn as a polycrystalline oxide phase. 2 O 5 In the same manner as in the case of Examples 9 to 13, the calculation of the occupancy rate of the polycrystalline crystal phase, the polycrystalline oxide phase, and the ingot as the bixbyite type phase were carried out. 2 O 3 Calculation of the two-phase occupancy of the phase, calculation of the W content, and calculation of the relative thermal conductivity. The results are summarized in Table 1. Further, in Examples 14 to 16, no additive element was used. 8. Preparation of Target The obtained oxide sintered body was processed into a target having a diameter of 3 inches (76.2 mm) and a thickness of 5.0 mm in the same manner as in the case of Examples 1 to 5. 9. Fabrication of Semiconductor Device A TFT which is a semiconductor device was produced in the same manner as in the case of Examples 1 to 5. The film formation rates of the oxide semiconductor films 14 in the respective examples are summarized in Table 2. 10. Evaluation of Characteristics of Semiconductor Device The source-gate voltage V was measured as a characteristic of a TFT which is a semiconductor device in the same manner as in the first to fifth embodiments. Gs Source-drain current I at -5 V Ds As the value of the OFF current, the source-gate voltage V Gs Source-drain current I at 15 V Ds That is, the ratio of the value of the ON current to the value of the OFF current, and the voltage between the source and the gate V Gs Uneven ΔV Gs . The results are summarized in Table 2. (Examples 17 to 19) 1. Preparation of powder raw material WO having a particle size of 0.5 μm to 1.2 μm and a purity of 99.9% by mass 2.0 Powder instead of WO having a particle size of 0.5 μm to 1.2 μm and a purity of 99.9% by mass 2.72 Prepare WO in the same manner as in the case of Examples 9 to 13 except for the powder. 2.0 Powder, SnO 2 Powder, and In 2 O 3 powder. 2. Preparation of a primary mixture of raw material powders First, the WO in the prepared raw material powder 2.0 Powder and SnO 2 The powder was added to a ball mill and pulverized and mixed for 18 hours, whereby a primary mixture of the raw material powders was prepared. Will WO 2.0 Powder and SnO 2 The molar mixing ratio of the powder is set to WO 2.0 :SnO 2 =1:3. As the dispersion medium at the time of the above pulverization and mixing, ethanol is used. The primary mixture of the obtained raw material powder was dried in the atmosphere. 3. Calcination of the primary mixture Next, the primary mixture of the obtained raw material powder was added to a crucible made of alumina, and calcined at a temperature of 950 ° C for 5 hours in an atmospheric environment. Regarding the calcination temperature, if the temperature at which the crystal phase is formed, the particle size of the calcined powder can be made as small as possible, and it is preferably as low as possible. In this way, get WSn 3 O 6 The type phase is used as a calcined product of the crystal phase. 4. Preparation of Secondary Mixture of Raw Material Powder Next, the obtained calcined product and In prepared as a raw material powder 2 O 3 The powder was put together in a crucible, and further placed in a pulverized mixing ball mill for 12 hours, and pulverized and mixed for 12 hours, thereby preparing a secondary mixture of the raw material powder. About Calcined and In 2 O 3 Mix ratio of powder to make WO 2.0 Powder, SnO 2 Powder, and In 2 O 3 The molar mixing ratio of the powders was as shown in Examples 17 to 19 of Table 1. As the dispersion medium at the time of the above pulverization and mixing, ethanol is used. The obtained mixed powder was dried by spray drying. 5. Formation of secondary mixture A disk-shaped formed body having a diameter of 100 mm and a thickness of about 9 mm was obtained in the same manner as in the case of Examples 1 to 5, except that the obtained secondary mixture was used. . 6. Sintering of the molded body Then, the obtained molded body was sintered in the atmosphere at the sintering temperatures shown in Examples 17 to 19 of Table 1 for 8 hours, whereby an oxide sintered body was obtained. 7. Evaluation of physical properties of the oxide sintered body was carried out by crystallization analysis by a powder X-ray diffraction method. As the X-ray, the K-ray of Cu was used to identify the crystal phase, and it was confirmed that it was in the form of a bixbyite type phase. 2 O 3 Form phase and WSn as a crystalline phase of polyoxide 3 O 6 The existence of the type phase. Then, a group of crystal grains having a higher Sn content and a higher W content by SEM-EDX grouping is summarized as WSn as a polycrystalline oxide phase. 3 O 6 In the same manner as in the case of Examples 9 to 13, the calculation of the occupancy rate of the polycrystalline crystal phase, the polycrystalline oxide phase, and the ingot as the bixbyite type phase were carried out. 2 O 3 Calculation of the two-phase occupancy of the phase, calculation of the W content, and calculation of the relative thermal conductivity. The results are summarized in Table 1. Further, in Examples 17 to 19, no additive element was used. 8. Preparation of Target The obtained oxide sintered body was processed into a target having a diameter of 3 inches (76.2 mm) and a thickness of 5.0 mm in the same manner as in the case of Examples 1 to 5. 9. Fabrication of Semiconductor Device A TFT which is a semiconductor device was produced in the same manner as in the case of Examples 1 to 5. The film formation rates of the oxide semiconductor films 14 in the respective examples are summarized in Table 2. 10. Evaluation of Characteristics of Semiconductor Device The source-gate voltage V was measured as a characteristic of a TFT which is a semiconductor device in the same manner as in the first to fifth embodiments. Gs Source-drain current I at -5 V Ds As the value of the OFF current, the source-gate voltage V Gs Source-drain current I at 15 V Ds That is, the ratio of the value of the ON current to the value of the OFF current, and the voltage between the source and the gate V Gs Uneven ΔV Gs . The results are summarized in Table 2. (Examples 20 to 36) When preparing a secondary mixture of raw material powders, as a raw material powder, in addition to calcined matter and In 2 O 3 In addition to the powder, an oxide powder containing an additive element (Al was added as shown in Example 20 to Example 36 of Table 3) 2 O 3 TiO 2 ,Cr 2 O 3 Ga 2 O 3 HfO 2 SiO 2 V 2 O 5 Nb 2 O 3 ZrO 2 MoO 2 Ta 2 O 3 Bi 2 O 3 An oxide sintered body was produced in the same manner as in the case of Examples 1 to 19 except for the above. The molar mixing ratio of the oxide powder containing the added element is shown in Table 3. The obtained oxide sintered body is processed into a target, and a TFT which is a semiconductor device including an oxide semiconductor film formed by RF magnetron sputtering using the target is produced. The physical properties of the obtained oxide sintered body are summarized in Table 3, and the characteristics of the obtained semiconductor device, that is, TFT, are summarized in Table 4. The measurement methods of physical properties and characteristics are the same as those of Examples 1 to 19. [table 3] *In the raw material column, W indicates WO x Powder (x is 2.0 or 2.72), Z represents ZnO powder, and S represents SnO 2 Powder, I means In 2 O 3 Powder, M represents an oxide powder of an additive element. *In the crystal phase column, I means In 2 O 3 Form phase, A means ZnWO 4 Type phase, B means Zn 2 W 3 O 8 Phase, C means WSnO 4 Form phase, D means WSn 2 O 5 Type phase, E means WSn 3 O 6 Phase, G stands for InGaZnO 4 Type phase, W means WO 3 Type phase, Z represents ZnO type phase, S represents SnO 2 Type phase. [Table 4] (Comparative Example 1 to Comparative Example 2) When the oxide sintered body was produced, the mixture of the raw material powders was prepared, and the mixture of the raw material powders was molded and sintered without being calcined, and the examples 1 to 1 were used. 8 or the same manner as in the case of the ninth embodiment to the ninth embodiment, the oxide sintered body is produced and processed into a target, and a semiconductor device including the oxide semiconductor film formed by the RF magnetron sputtering method using the target is produced. TFT. It was confirmed that the mixture of the raw material powders was molded and sintered without being calcined, and no polycrystalline oxide phase was formed. Between Comparative Example 1 to Comparative Example 2, WO 2.72 Powder or WO 2.0 Powder, ZnO powder or SnO 2 Powder, and In 2 O 3 The molar mixing ratio of the powder is different. The physical properties of the oxide sintered body are summarized in Table 3, and the characteristics of the TFT which is a semiconductor device are summarized in Table 4. The measurement methods of physical properties and characteristics are the same as in the examples. Referring to Tables 1 to 4, an oxide sintered body containing at least one of indium, tungsten, zinc, and tin and including a polycrystalline phase containing at least one of tungsten, zinc, and tin as a crystal phase is used. In the TFT (thin film transistor) which is a semiconductor device in which the oxide semiconductor film is formed as a channel layer, the OFF current can be reduced to less than 1×10. -11 A, and increase the ratio of ON current to OFF current with a lower driving voltage to the order of 8 (so-called order of 8, meaning 1 × 10 8 Above and not up to 1×10 9 , the same as below). Further, the thermal conductivity of the oxide sintered body can be increased. Furthermore, in the column of the ratio of the ON current to the OFF current in Tables 2 and 4, the order of magnitude 9 means 1 × 10 9 Above and not up to 1×10 10 , the so-called order of magnitude 5, means 1 × 10 5 Above and not up to 1×10 6 . The embodiments and examples disclosed herein are to be considered in all respects as illustrative and not restrictive. The scope of the present invention is defined by the scope of the claims and not the description of the claims.

10‧‧‧半導體裝置10‧‧‧Semiconductor device

11‧‧‧基板11‧‧‧Substrate

12‧‧‧閘極電極12‧‧‧ gate electrode

13‧‧‧閘極絕緣膜13‧‧‧Gate insulation film

14‧‧‧氧化物半導體膜14‧‧‧Oxide semiconductor film

14c‧‧‧通道部14c‧‧‧Channel Department

14d‧‧‧汲極電極形成用部14d‧‧‧Bare electrode forming part

14s‧‧‧源極電極形成用部14s‧‧‧Source electrode forming part

15‧‧‧源極電極15‧‧‧Source electrode

16‧‧‧汲極電極16‧‧‧汲electrode

CW‧‧‧通道寬度C W ‧‧‧ channel width

CL‧‧‧通道長度C L ‧‧‧ channel length

圖1係表示本發明之半導體裝置之一例之概略圖，(A)表示概略俯視圖，(B)表示(A)所示之IB-IB線之概略剖視圖。 圖2(A)～(D)係表示本發明之半導體裝置之製造方法之一例的概略剖視圖。1 is a schematic view showing an example of a semiconductor device of the present invention, wherein (A) shows a schematic plan view, and (B) shows a schematic cross-sectional view of line IB-IB shown in (A). 2(A) to 2(D) are schematic cross-sectional views showing an example of a method of manufacturing a semiconductor device of the present invention.

Claims (8)

一種氧化物燒結體，其係包含銦、鎢、與鋅及錫之至少1種者；且 作為結晶相，包括包含鎢、與鋅及錫之至少1種之多氧化物結晶相。An oxide sintered body comprising at least one of indium, tungsten, and zinc and tin; and the crystalline phase includes a polycrystalline oxide crystal phase containing at least one of tungsten, zinc, and tin. 如請求項1之氧化物燒結體，其中作為結晶相，進而包括方鐵錳礦型相。The oxide sintered body of claim 1, wherein the crystal phase further comprises a bixbyite type phase. 如請求項2之氧化物燒結體，其中氧化物燒結體之一剖面中上述多氧化物結晶相及上述方鐵錳礦型相之合計面積相對於上述剖面面積之佔有率即雙相佔有率為95%以上且100%以下。The oxide sintered body of claim 2, wherein the total area of the polycrystalline oxide phase and the bixbyite phase in the cross section of the oxide sintered body is equal to the occupied area of the cross-sectional area, that is, the two-phase occupancy rate is 95. More than % and less than 100%. 如請求項1之氧化物燒結體，其中氧化物燒結體之一剖面中上述多氧化物結晶相之面積相對於上述剖面面積之佔有率即多氧化物結晶相佔有率為大於0%且為50%以下。The oxide sintered body according to claim 1, wherein a ratio of an area of the polycrystalline oxide crystal phase in the cross section of the oxide sintered body to the cross-sectional area, that is, a polycrystalline oxide crystal phase occupation ratio of more than 0% and 50% %the following. 如請求項1之氧化物燒結體，其中上述多氧化物結晶相包含選自由ZnWO4 型相、Zn2 W3 O8 型相、WSnO4 型相、WSn2 O5 型相、及WSn3 O6 型相所組成之群中之至少1種結晶相。The oxide sintered body of claim 1, wherein the polycrystalline oxide phase comprises a layer selected from the group consisting of a ZnWO 4 type phase, a Zn 2 W 3 O 8 type phase, a WSnO 4 type phase, a WSn 2 O 5 type phase, and WSn 3 O At least one crystal phase of the group consisting of the type 6 phases. 如請求項1之氧化物燒結體，其中鎢相對於氧化物燒結體中所含之全部金屬元素及矽之含有率為0.5原子%以上且20原子%以下。The oxide sintered body of claim 1, wherein the content of tungsten relative to all metal elements and cerium contained in the oxide sintered body is 0.5 atom% or more and 20 atom% or less. 如請求項1至6中任一項之氧化物燒結體，其中選自由鋁、鈦、鉻、鎵、鉿、鋯、矽、鉬、釩、鈮、鉭、及鉍所組成之群中之至少1種元素相對於氧化物燒結體中所含之全部金屬元素及矽之含有率為0.1原子%以上且10原子%以下。The oxide sintered body according to any one of claims 1 to 6, wherein at least one selected from the group consisting of aluminum, titanium, chromium, gallium, cerium, zirconium, hafnium, molybdenum, vanadium, niobium, tantalum, and niobium The content of all the metal elements and cerium contained in the oxide sintered body is 0.1 atom% or more and 10 atom% or less. 一種半導體裝置，其包含使用如請求項1之氧化物燒結體作為靶利用濺鍍法所形成之氧化物半導體膜。A semiconductor device comprising an oxide semiconductor film formed by sputtering using the oxide sintered body of claim 1 as a target.
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