CN103560147B - A kind of nitrogen phosphorus oxygen zinc thin film and preparation method thereof and thin film transistor (TFT) - Google Patents
A kind of nitrogen phosphorus oxygen zinc thin film and preparation method thereof and thin film transistor (TFT) Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 71
- IPDZGBLBEDHVOD-UHFFFAOYSA-N [Zn].[P].[O].[N] Chemical compound [Zn].[P].[O].[N] IPDZGBLBEDHVOD-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 238000004544 sputter deposition Methods 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 34
- 239000011701 zinc Substances 0.000 claims description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 230000001276 controlling effect Effects 0.000 claims 2
- 238000005477 sputtering target Methods 0.000 claims 1
- 239000013077 target material Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 24
- 239000010410 layer Substances 0.000 description 19
- 239000011787 zinc oxide Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 229910007379 Zn3N2 Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000005355 Hall effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 230000009643 growth defect Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- -1 oxonium ion Chemical class 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 150000001768 cations Chemical group 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
Abstract
The invention discloses a kind of nitrogen phosphorus oxygen zinc thin film and preparation method thereof and thin film transistor (TFT), described nitrogen phosphorus oxygen zinc thin film consist of ZnxPyO1-x-y-zNz, wherein, 55%��x��65%, 1%��y��10%, 10%��z��22%, the atom number percentage ratio sum of each atom is 100%. By this nitrogen phosphorus oxygen zinc thin film of ion sputtering deposition, the thin film transistor (TFT) made simultaneously for given thin-film material obtains high carrier mobility and high stability.
Description
Technical field
The present invention relates to the preparation of a kind of semiconductive thin film, particularly relate to a kind of nitrogen phosphorus oxygen zinc thin film and preparation method thereof and thin film transistor (TFT).
Background technology
In the time of nearly more than ten years, the series of advantages such as little, lightweight with its volume with the silicon materials TFT liquid crystal display device being driver element, quality is high obtains and develops rapidly, and becomes the Message Display Terminal of main flow. However as people's raising to performance requirements such as display device resolution, response speed, stability, exposing a series of problem with the TFT that silicon materials are active layer, a-SiTFT backboard (is generally less than 0.5cm owing to himself mobility is relatively low2/ (V s), it is impossible to realize high-resolution and show; Low temperature polycrystalline silicon (LTPS) TFT technology complex manufacturing, equipment investment is high, panel faces lack of homogeneity, yields is low, production cost is high etc. is difficult to the problem that overcomes, at large scale FPD, it shows that the development further in field is subject to bigger restriction.
Compared with silicon TFT widely used in liquid crystal display active driving matrix at present, oxide semiconductor TFT has the advantage that (1) field-effect mobility is higher; (2) on-off ratio is high; (3) preparation technology temperature is low; (4) can making large area amorphous thin film, uniformity is good, has well consistent electrology characteristic; (5) affected by visible ray little, more stable than amorphous silicon film transistor; (6) transparent devices can be fabricated to. In flat display field, oxide TFT technology almost meets being required of many display patterns such as including AMOLED driving, quick jumbotron liquid crystal display, 3D show. In Flexible Displays, backing material can not bear high temperature, and the preparation technology temperature of oxide TFT is low, compatible with flexible substrate, thus metal-oxide TFT possesses greater advantage.
But in typical a-IGZO, the random distribution of a large amount of cations forms the scattering mechanism of electronics, causes that carrier mobility is relatively low.And owing to there is a large amount of Lacking oxygen in a-IGZO thin film, when illumination and back bias voltage, in its band gap, the existence of donor-type Lacking oxygen will cause the bad stability of device, therefore this thin film transistor (TFT) existence and stability problem.
Summary of the invention
The technical problem to be solved is: make up above-mentioned the deficiencies in the prior art, it is proposed to a kind of nitrogen phosphorus oxygen zinc thin film and preparation method thereof and thin film transistor (TFT), the thin film transistor (TFT) of its making can obtain maximum carrier mobility
The technical problem of the present invention is solved by following technical scheme:
A kind of nitrogen phosphorus oxygen zinc thin film, it consists of ZnxPyO1-x-y-zNz, wherein, 55%��x��65%, 1%��y��10%, 10%��z��22%, the atom number percentage ratio sum of each atom is 100%.
Preferably, 59%��x��61%, 5%��y��8%, 12%��z��15%.
The present invention adopts the anion of non-oxygen to replace oxonium ion in zinc oxide and then the valence band of adjustment oxide, eliminates the Lacking oxygen in oxide semiconductor, and is nearly all Zn due to cation2+, it is different from traditional a-IGZO, there is a large amount of cationic random distribution, reduce the potential barrier in carrier transport. Experiments show that:
Quasiconductor containing zinc is substantially by anion vacant (defect) conduction, if Zn content is few, conductive capability reduces, if Zn content is too high, there is a large amount of defect in explanation, becomes closer to conductor, and the TFT thin film that performance is good needs to find between balance, acquisition conductive capability is suitable, defect is not many, and in the present invention when atom zinc is less than 55%, the carrier mobility of thin film reduces, when atom zinc is more than 65%, thin film is polycrystalline structure and has raised growth defect.
In sputter procedure, cube Zn3N2, hexagon ZnO and belong to the Zn of tetragonal crystal system3P2Between there is growth competition relation, contribute to the formation of nitrogen oxygen phosphorus zinc amorphous phase, but when the content of nitrogen and phosphorous reduces, thin film present the polycrystalline structure of ZnO, when oxygen content reduces, thin film presents Zn3N2Or Zn3P2Polycrystalline structure. So, when atom phosphorus is less than 1%, thin film easily forms polycrystalline structure, and the defect of thin film is many, and when atom phosphorus is more than 10%, thin film is polycrystalline structure and has raised growth defect, and corresponding thin-film transistor drain current is big; When Nitrogen Atom is less than 10%, thin film easily forms polycrystalline structure, and the defect of thin film is many, and when Nitrogen Atom is more than 22%, thin film is polycrystalline structure and has raised growth defect, and corresponding thin-film transistor drain current is big.
Nitrogen phosphorus oxygen zinc thin film in the present invention is amorphous state, its surfacing, adopts AccentHL5500PC type Hall effect test system and test carrier concentration and Hall mobility. Carrier concentration under optimal conditions is relatively low��and 1017cm-3, Hall mobility reaches 49cm2/Vs��
Another object of the present invention is the method manufacturing nitrogen phosphorus oxygen zinc thin film by magnetron sputtering in atmosphere reactive, atmosphere reactive by purity oxygen or pure nitrogen gas or the arbitrarily mixing of the two or the two with constitute any mixing of argon, mixture such as nitrogen/argon gas, the mixture of oxygen/nitrogen/argon gas, the mixture of oxygen/nitrogen is constituted, the method of described sputter coating can make different materials is fabricated to target and is arranged on different target position and sputters simultaneously, the ratio of each atom in prepared thin film is controlled by regulating the sputtering power of different target position, or bi-material therein is fabricated to a target according to described atomic ratio, is then arranged on from other target on different target position again and implements cosputtering, control the ratio of each atom in prepared thin film by regulating the sputtering power of different target position.
Described target is ZnO target, P2O5Target, Zn3N2Target or Zn3P2Target.
The distance adopting rf magnetron sputtering, target and substrate is 20-150mm, and rf frequency 13.56MHz used, the ratio of the various gases of atmosphere reactive is controlled by gas flowmeter. During sample grown, underlayer temperature is maintained within 25-100 DEG C, at 0.5W/cm2-5W/cm2Power density under implement sputtering, the background vacuum of sputtering chamber is less than 1 �� 10-7Holder, sputtering pressure controls between 0.1Pa-10.0Pa.
A kind of thin film transistor (TFT) adopting top gate structure, including substrate, forms the source electrode on substrate, drain electrode and nitrogen phosphorus oxygen zinc semiconductor active layer, grid and gate insulator; Described source electrode contacts with described nitrogen phosphorus oxygen zinc semiconductor active layer respectively with drain electrode, described gate insulator covers on described nitrogen phosphorus oxygen zinc semiconductor active layer and described grid is formed on described gate insulator, channel region is between described source electrode and drain electrode, described grid forms autoregistration with insulating barrier and channel region, and described nitrogen phosphorus oxygen zinc semiconductor active layer is formed by above-mentioned nitrogen phosphorus oxygen zinc thin film etching.
The advantage of this structure is in that nitrogen phosphorus oxygen zinc semiconductor active layer is covered by gate insulator, will not be subject to the impact of environment or technological factor and not increase extra recipe step.
Accompanying drawing explanation
Fig. 1 is the structure chart of nitrogen phosphorus oxygen zinc thin film transistor (TFT) prepared in example.
Detailed description of the invention
Below against accompanying drawing and combine preferred embodiment the invention will be further described.
P-doped and nitrogen while that the present invention being in zinc oxide material, it consists of ZnxPyO1-x-y-zNz, wherein, 55%��x��65%, 1%��y��10%, 10%��z��22%. And by this nitrogen phosphorus oxygen zinc thin film of ion sputtering deposition, the thin film transistor (TFT) made simultaneously for given thin-film material obtains high carrier mobility and high stability.
Embodiment 1
By ZnO target, P2O5Target and Zn3N2It is separately mounted to three different target position sputter simultaneously, controls coating speed by regulating the sputtering power of different target position, make ZnO, P2O5Being 1:1:12 with the sputter coating velocity ratio of ZnN, corresponding atomic ratio is about Zn:P:N=13:2:12.
ZnOPN adopts the distance of rf magnetron sputtering, target and substrate to be 60mm, and rf frequency 13.56MHz used, with the mixing gas of high pure nitrogen and oxygen for sputter gas (atmosphere reactive), the ratio of gas is controlled by gas flowmeter. The background vacuum of sputtering chamber is less than 1 �� 10-7Holder, in order to prevent polluting, first carries out pre-sputtering 10min, and during sample grown, underlayer temperature is maintained at room temperature 25 DEG C, and oxygen flow is 5sccm, and nitrogen flow is 20sccm. At 0.8Pa pressure and 2W/cm2Power density under complete sputter coating.
The constituent content of prepared nitrogen phosphorus oxygen zinc thin film is measured by X ray electron spectrum (XPS), and wherein Zn content is 59%, and phosphorus content is 6%, and nitrogen content is 14%, and oxygen content is 21%.
Adopting AccentHL5500PC type Hall effect test system and test thin film carrier concentration and Hall mobility, carrier concentration is relatively low��and 1017cm-3, Hall mobility is 30cm2/ Vs. Thin film is amorphous state. On-off ratio reaches 107��
As shown in Figure 1, a kind of top-grate structure thin film transistor, including substrate 1, form source electrode 2 on substrate 1 and drain electrode 3, the nitrogen phosphorus oxygen zinc semiconductor active layer 4 formed on source electrode 2, drain electrode 3 and substrate 1, the gate insulator 5 on nitrogen phosphorus oxygen zinc semiconductor active layer 4 and the grid 6 on gate insulator 5, channel region is between source electrode 2 and drain electrode 3, wherein, grid 6 can form autoregistration with insulating barrier 5 and channel region.In this structure, nitrogen phosphorus oxygen zinc semiconductor active layer is subject to dielectric protection layer, and the field-effect mobility of TFT reaches 37cm2/Vs
The manufacture method of the top-gated nitrogen phosphorus oxygen zinc thin film transistor (TFT) of the present embodiment comprises the following steps:
(1) substrate 1 can be glass, quartz, silicon chip or other flexible base board such as plastics etc., deposit conductive layer on substrate 1, depositional mode can adopt thermal evaporation, electron beam evaporation, magnetron sputtering etc., conductive layer can be titanium, silver, gold, chromium, aluminum, copper, molybdenum, tantalum, tungsten etc. or nesa coating, it can also be the alloy of these conductive materials, both can be single layer structure, it is also possible to be the multiple structure constituted with these conductive layers. Preferred employing magnetron sputtering Titanium Mo, conductive layer thickness is between 10nm-1000nm, it is advantageous to thickness is 200nm, and the background vacuum pressure of sputtering is less than 1 �� 10-6Holder.
(2) wet method or dry etching conductive layer is adopted to form source electrode 2 and drain electrode 3.
(3) according to above-mentioned process conditions deposition nitrogen phosphorus oxygen zinc semiconductive thin film on source electrode 2, drain electrode 3 and substrate 1 after, the ZnOPN film thickness formed is 5-2000nm, and preferably thickness is 50nm.
(4) forming grid insulating film on nitrogen phosphorus oxygen zinc semiconductive thin film, the depositional mode of grid insulating film can adopt PECVD, PLD, electron beam evaporation, magnetron sputtering and ALD, can by silicon nitride (SiNx), silicon oxide (SiO2), silicon oxynitride, aluminium oxide, yittrium oxide or HfO2Etc. making, optimally, adopting ALD technique, at room temperature the a-SiOx grid insulating film of deposit thickness 100nm, the background vacuum of deposition is less than 1 �� 10-6Holder.
(5) forming gate metal layer on grid insulating film, the depositional mode of gate metal layer can adopt the technology such as thermal evaporation, electron beam evaporation, magnetron sputtering.
(6) adopt wet method or dry etching gate metal layer to form grid 6, then with grid 6 for mask, dry etching grid insulating film forms the gate insulator 5 consistent with grid 6 pattern.
(7) wet etching nitrogen phosphorus oxygen zinc semiconductive thin film is adopted to form nitrogen phosphorus oxygen zinc semiconductor active layer 4.
Embodiment 2
Utilize sputtering field traditional binders by two kinds of powder ZnO, P2O5According to mol ratio 12:1 mix homogeneously, it is thus achieved that target atom than Zn:P=12:2, all the other are oxygen.
ZnOPN adopts the distance of rf magnetron sputtering, target and substrate to be 60mm, and rf frequency 13.56MHz used, with the mixing gas of high pure nitrogen and oxygen for sputter gas, the ratio of gas is controlled by gas flowmeter. The background vacuum of sputtering chamber is less than 1 �� 10-7Holder, pre-sputtering 10min. During sample grown, underlayer temperature is maintained at room temperature 25 DEG C, and oxygen flow is 2sccm, and nitrogen flow is 100sccm. At 1Pa pressure and 2.0W/cm2Power density under complete sputter coating.
The constituent content of prepared nitrogen phosphorus oxygen zinc thin film is measured by X ray electron spectrum (XPS), and wherein Zn content is 61%, and phosphorus content is 6.3%, and nitrogen content is 14.8%, and oxygen content is 17.9%.
Adopting AccentHL5500PC type Hall effect test system and test carrier concentration and Hall mobility, carrier concentration is higher, is about 2.1 �� 1019cm-3, Hall mobility is 55cm2/ Vs. Thin film is amorphous state, the surfacing of amorphous ZnO PN thin film. According to the TFT structure in embodiment 1, field-effect mobility reaches 51cm2/Vs��
Embodiment 3
By ZnO target, Zn3P2Target and Zn3N2Target is separately mounted to three different target position and sputters simultaneously, controls coating speed by regulating the sputtering power of different target position, makes ZnO, Zn3P2Target and Zn3N2The sputter coating velocity ratio of target is 10:1:2, and corresponding atomic ratio is about Zn:P:N=15:2:2.
ZnOPN adopts the distance of rf magnetron sputtering, each target and substrate to remain as 60mm, rf frequency 13.56MHz used, and with the mixing gas of high pure nitrogen and oxygen for sputter gas, the ratio of gas is controlled by gas flowmeter. The background vacuum of sputtering chamber is less than 1 �� 10-7Holder, pre-sputtering 10min. During sample grown, underlayer temperature is maintained at room temperature 25 DEG C, and oxygen flow is 10sccm, and the flow of nitrogen is 50sccm, and argon flow amount is 30sccm. At 1Pa pressure and 1.5W/cm2Power density under complete cosputtering plated film.
The constituent content of prepared nitrogen phosphorus oxygen zinc thin film is measured by X ray electron spectrum (XPS), and wherein Zn content is 59%, and phosphorus content is 5.1%, and nitrogen content is 15%, and oxygen content is 21%.
Adopting AccentHL5500PC type Hall effect test system and test carrier concentration and Hall mobility, carrier concentration is about��1018cm-3, Hall mobility is 60cm2/ Vs. Thin film is amorphous state, the surfacing of amorphous ZnO PN thin film. According to the TFT structure in embodiment 1, field-effect mobility reaches 58cm2/ Vs, on-off ratio reaches 106��
Above content is in conjunction with concrete preferred implementation further description made for the present invention, it is impossible to assert that specific embodiment of the invention is confined to these explanations. For those skilled in the art, without departing from the inventive concept of the premise, it is also possible to make some equivalent replacements or obvious modification, and performance or purposes are identical, all should be considered as belonging to protection scope of the present invention.
Claims (6)
1. a nitrogen phosphorus oxygen zinc thin film, it is characterised in that: described nitrogen phosphorus oxygen zinc thin film consist of ZnxPyO1-x-y-zNz, wherein, 59%��x��61%, 5%��y��8%, 12%��z��15%, the atom number percentage ratio sum of each atom is 100%, and described nitrogen phosphorus oxygen zinc thin film is amorphous state.
2. the preparation method of a nitrogen phosphorus oxygen zinc thin film, it is characterised in that described nitrogen phosphorus oxygen zinc thin film consist of ZnxPyO1-x-y-zNz, wherein, 55%��x��65%, 1%��y��10%, 10%��z��22%, the atom number percentage ratio sum of each atom is 100%, described preparation method comprises the steps: to manufacture nitrogen phosphorus oxygen zinc thin film by magnetron sputtering in atmosphere reactive, described atmosphere reactive by purity oxygen or pure nitrogen gas or the arbitrarily mixing of the two or the two with constitute any mixing of argon, described magnetron sputtering is by containing zinc, phosphorus, oxygen, the target of nitrogen is arranged on different target position and sputters simultaneously, the coating speed of each target is controlled by regulating the sputtering power of different target position, thus controlling the ratio of each atom in prepared nitrogen phosphorus oxygen zinc thin film, or by containing zinc, phosphorus, oxygen, nitrogen material in bi-material be fabricated to a target according to described atomic ratio, then it is arranged on from other target on different target position again and implements cosputtering, the coating speed of each target is controlled, thus controlling the ratio of each atom in prepared nitrogen phosphorus oxygen zinc thin film by regulating the sputtering power of different target position.
3. preparation method as claimed in claim 2, it is characterized in that: adopt rf magnetron sputtering, the distance of sputtering target material and substrate is 20-150mm, rf frequency 13.56MHz used, the ratio of the various gases of atmosphere reactive is controlled by gas flowmeter, during sample grown, underlayer temperature is maintained within 25-100 DEG C, at 0.5W/cm2-5W/cm2Power density under implement sputtering, the background vacuum pressure of sputtering chamber is less than 1 �� 10-7Holder, sputtering pressure controls between 0.1Pa-10.0Pa.
4. the thin film transistor (TFT) adopting top gate structure, it is characterised in that: include substrate, form the source electrode on substrate, drain electrode and nitrogen phosphorus oxygen zinc semiconductor active layer, grid and gate insulator; Described source electrode contacts with described nitrogen phosphorus oxygen zinc semiconductor active layer respectively with drain electrode, described gate insulator covers on described nitrogen phosphorus oxygen zinc semiconductor active layer and described grid is formed on described gate insulator, channel region is between described source electrode and drain electrode, described grid forms autoregistration with insulating barrier and channel region, and described nitrogen phosphorus oxygen zinc semiconductor active layer nitrogen phosphorus oxygen zinc thin film etching described in claim 1 is formed.
5. thin film transistor (TFT) as claimed in claim 4, it is characterised in that: the thickness of described nitrogen phosphorus oxygen zinc thin film is 5-2000nm.
6. thin film transistor (TFT) as claimed in claim 4, it is characterised in that: the thickness of described nitrogen phosphorus oxygen zinc thin film is 50nm.
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