CN103547056A - Conducting circuit device and manufacturing method thereof - Google Patents
Conducting circuit device and manufacturing method thereof Download PDFInfo
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- CN103547056A CN103547056A CN201210239969.5A CN201210239969A CN103547056A CN 103547056 A CN103547056 A CN 103547056A CN 201210239969 A CN201210239969 A CN 201210239969A CN 103547056 A CN103547056 A CN 103547056A
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Abstract
The invention provides a conducting circuit device and a manufacturing method thereof. The conducting circuit device comprises a substrate, a hydrophobic anti-plating layer, an active metal layer and an electroless plating metal layer, wherein the substrate is provided with an insulating upper surface, the hydrophobic anti-plating layer is made of a hydrophobic material, formed on the insulating upper surface and provided with at least one through hole exposing a plating area of the insulating upper surface, the active metal layer is formed on the plating area and positioned in the through holes, and the electroless plating metal layer is plated on the active metal layer in an electroless manner.
Description
Technical field
The present invention relates to a kind of conducting wire device and manufacture method thereof, particularly relate to a kind of conducting wire device and manufacture method thereof that is embedded in the patterned circuit of the anti-coating of one deck hydrophobicity that has.
Background technology
United States Patent (USP) discloses No. 2010/0243149 in early days and discloses a kind of circuit board.This circuit board comprises one deck the first insulating barrier, one deck and this first insulating barrier pressing and be formed with the second insulating barrier of patterning hole, one deck is formed on this first insulating barrier and is positioned at the pattern conductive glue-line of described hole, and one deck is formed on the metal deposition layer on this pattern conductive glue-line.This pattern conductive glue-line is to apply a kind of solvent-borne type glue material to the designation area of this first insulating barrier with mode of printing, and drying is solidified to form again afterwards.This solvent-borne type glue material comprises a kind of dispersion solvent and is dispersed in the active metal particles in this dispersion solvent.After forming this pattern conductive glue-line, a kind of non-hydrophobic insulating resin and this first insulating barrier hot pressing are merged to this pattern conductive glue-line of covering, at this non-hydrophobic insulating resin, form groove more afterwards, at this first insulating barrier, form this second insulating barrier whereby.This non-hydrophobic insulating resin has high viscosity to fix this pattern conductive glue-line.
United States Patent (USP) the 4th, discloses a kind of a kind of method of making circuit pattern on the base material of a circuit board 865, No. 873.The method is included on a base material and forms a layer insulating, on this insulating barrier, form one deck water soluble layer, in laser-induced thermal etching mode, form the through hole of this insulating barrier of break-through and this water soluble layer, on this water soluble layer and this through-hole wall, form one deck catalyst washcoat, in electroless plating mode, in this catalyst washcoat, form one deck electroless plated metal layer, and remove this water soluble layer.Owing to so forming circuit pattern, protrude from this insulating barrier, for subsequent group electronic components, on this circuit board, there is negative impact.In addition, the method need to form this water soluble layer and remove the step of this water soluble layer, to avoid forming this electroless plated metal layer on this insulating barrier.
Summary of the invention
The object of the present invention is to provide a kind of conducting wire device and manufacture method thereof.
So a kind of conducting wire of the present invention device, comprises: a base material, has an insulation upper surface; The anti-coating of one deck hydrophobicity, is made by a hydrophobic material, is formed on this insulation upper surface, and has at least one perforation, and this perforation exposes an electroplating region of this insulation upper surface; One deck reactive metal layer, is formed on this electroplating region and is positioned at this perforation; And one deck electroless plated metal layer, electroless plating is in this reactive metal layer.
Conducting wire of the present invention device, the anti-coating of this hydrophobicity has one away from the upper surface of the insulation upper surface of this base material, this electroless plated metal layer has a upper surface, and the upper surface of this electroless plated metal layer is connected with the upper surface of the anti-coating of this hydrophobicity in fact and jointly forms a continuous plane.
Conducting wire of the present invention device, this hydrophobic material is a kind of hydrophobic resin, this hydrophobic resin is to be selected from Merlon, dimethyl silicone polymer adipic acid diamides, polypropylene, and one of them of the combination of described material.
Conducting wire of the present invention device, this Merlon has the molecular weight of a 1000-4000, the molecular weight that this dimethyl silicone polymer adipic acid diamides has a 1000-4000, and this polypropylene has the molecular weight of a 1000-4000.
Conducting wire of the present invention device, this hydrophobic material is a kind of wax material.
Conducting wire of the present invention device, this wax material comprises wax and a kind of inorganic oxide, this inorganic oxide is to be selected from silicon dioxide, titanium dioxide, magnesium oxide, zirconia, and one of them of the combination of described material.
Conducting wire of the present invention device, this wax material comprises 60-95wt% wax and 5-40wt% inorganic oxide.
Conducting wire of the present invention device, this wax has one lower than the fusing point of 60 ℃.
Conducting wire of the present invention device, this base material is the mixture that is selected from Merlon, acrylate and acrylonitril butadiene styrene resin by a kind of, and the mixture of Merlon and acrylonitril butadiene styrene resin is made.
Conducting wire of the present invention device, this active metal is to select from palladium, rhodium, platinum, iridium, osmium, gold, nickel, iron, and one of them of the combination of described metal material.
Conducting wire of the present invention device, the material of this electroless plated metal layer is to be selected from one of them of copper, gold, silver and nickel.
The present invention also provides a kind of method of manufacturing this conducting wire device.
So the present invention manufactures the method for conducting wire device, comprises:
(a) the insulation upper surface at a base material forms the anti-coating of hydrophobicity that one deck is made by a kind of hydrophobic material;
(b) in laser-induced thermal etching mode, on the anti-coating of this hydrophobicity, form a perforation, to expose an electroplating region of this insulation upper surface to the open air;
(c) electroplating region of insulation upper surface that makes to be formed with this base material of the anti-coating of this hydrophobicity contacts a kind of active metal aqueous solution, make the electroplating region of this insulation upper surface wetting by this active metal aqueous solution, on the electroplating region of this insulation upper surface, form whereby one deck reactive metal layer; And
(d) in electroless plating mode, in this reactive metal layer, form one deck electroless plated metal layer.
Method of the present invention, step (c) is by this base material that is formed with the anti-coating of this hydrophobicity is immersed in to this active metal aqueous solution, takes out afterwards again and complete in this active metal aqueous solution.
Method of the present invention, the anti-coating of this hydrophobicity has a kind of color of dead color.
Beneficial effect of the present invention is: utilize one deck be formed with patterning perforation the anti-coating of hydrophobicity and can be simply and effectively on a base material, form the required reactive metal layer of electroless plating, and can form whereby a circuit pattern that is embedded in the anti-coating of this hydrophobicity.
Accompanying drawing explanation
Fig. 1-7th, schematic diagram, the method consecutive steps of a kind of conducting wire of making device of demonstration a preferred embodiment of the present invention;
Fig. 8 is a schematic perspective view, shows a kind of conducting wire device of a preferred embodiment of the present invention;
Fig. 9 is a cross-sectional schematic, shows the structure of the conducting wire device of this preferred embodiment of the present invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, below in conjunction with accompanying drawing, the specific embodiment of the present invention is elaborated.First it should be noted that, the present invention is not limited to following embodiment, and the spirit that those skilled in the art should embody from following execution mode is understood the present invention, and each technical term can be done the most wide in range understanding based on Spirit Essence of the present invention.In figure, same or analogous member uses the same reference numerals to represent.
Fig. 8 and Fig. 9 show a kind of conducting wire device 100 of a preferred embodiment of the present invention, for example antenna.This conducting wire device 100 comprises: an insulating substrate 2, has an insulation upper surface 21; The anti-coating 3 of one deck hydrophobicity, by a kind of hydrophobic material, made, be formed on this insulation upper surface 21, and have a upper surface 31 away from the insulation upper surface 21 of this base material 2 and at least one perforation 32, this perforation 32 exposes an electroplating region 211 of this insulation upper surface 21; One deck reactive metal layer 4, is formed on this electroplating region 211 and is positioned at this perforation 32; And one deck electroless plated metal layer 5, electroless plating to define a circuit pattern, and has a upper surface 51 in this reactive metal layer 4.In this preferred embodiment, the upper surface 51 of this electroless plated metal layer 5 flatly flushes with the upper surface 31 of the anti-coating 3 of this hydrophobicity in fact, makes the upper surface 51 essence Shangdis of this electroless plated metal layer 5 be connected with the upper surface 31 of the anti-coating 3 of this hydrophobicity and jointly form a continuous plane.The upper surface 51 that this preferred embodiment also can be modified as this electroless plated metal layer 5 is easily curved surface with the upper surface 31 of the anti-coating 3 of this hydrophobicity, so, the upper surface 51 essence Shangdis of this electroless plated metal layer 5 are connected with the upper surface 31 of the anti-coating 3 of this hydrophobicity and jointly form a continuous curved surface.Selectively, the upper surface 51 of this electroless plated metal layer 5 is the upper surfaces 31 lower than the anti-coating 3 of this hydrophobicity.Again, selectively, this circuit pattern can separately comprise one deck and electroplate the electroplated metal layer (not shown) on this electroless plated metal layer.
Preferably, this hydrophobic material is a kind of hydrophobic resin or a kind of wax material.
Preferably, this hydrophobic resin is to be selected from Merlon, dimethyl silicone polymer adipic acid diamides, polypropylene, and one of them of the combination of described material.More preferably, this Merlon has the molecular weight of a 1000-4000, the molecular weight that this dimethyl silicone polymer adipic acid diamides has a 1000-4000, and this polypropylene has the molecular weight of a 1000-4000.
Preferably, this wax material comprises wax and a kind of inorganic oxide, and this inorganic oxide is to be selected from silicon dioxide, titanium dioxide, magnesium oxide, zirconia, and one of them of the combination of described material.More preferably, this wax material comprises 60-95wt% wax and 5-40wt% inorganic oxide.Under better, this wax has one lower than the fusing point of 60 ℃.
Preferably, this base material 2 is the mixtures that are selected from Merlon, acrylate and acrylonitril butadiene styrene resin by a kind of, and the mixture of Merlon and acrylonitril butadiene styrene resin is made.
Preferably, this active metal is to select from palladium, rhodium, platinum, iridium, osmium, gold, nickel, iron, and one of them of the combination of described metal material.
Preferably, the material of this electroless plated metal layer 5 is to be selected from one of them of copper, gold, silver and nickel.
Fig. 1-7 show a preferred embodiment of the method for manufacturing this conducting wire device 100.The method comprises: (a) an insulation upper surface 21 at an insulating substrate 2 forms the anti-coating 3 of hydrophobicity (as shown in Figures 1 and 2) that one deck is made by a kind of hydrophobic material; (b) in laser-induced thermal etching mode, on the anti-coating 3 of this hydrophobicity, form a perforation 32, to expose an electroplating region 211 (as shown in Figure 3) of this insulation upper surface 21 to the open air; (c) make to be formed with a kind of active metal aqueous solution 6 of electroplating region 211 contact of insulation upper surface 21 of this base material 2 of the anti-coating 3 of this hydrophobicity, make the electroplating region 211 of this insulation upper surface 21 wetting by this active metal aqueous solution 6, on the electroplating region 211 of this insulation upper surface 21, form whereby one deck reactive metal layer 4 (as shown in Fig. 4 and Fig. 6), because have hydrophobicity, the upper surface 31 of the anti-coating 3 of this hydrophobicity can be not wetting by this active metal aqueous solution 6; And (d) in electroless plating mode, in this reactive metal layer 4, form one deck electroless plated metal layer 5 (as shown in Figure 7).
In this preferred embodiment, step (c) is by this base material 2 that is formed with the anti-coating 3 of this hydrophobicity is immersed in this active metal aqueous solution 6, in this active metal aqueous solution 6, take out (as Figure 4-Figure 6) more afterwards, clean, dry and complete.Selectively, step (c) is by this active metal aqueous solution 6 is sprayed on this base material 2 that is formed with the anti-coating 3 of this hydrophobicity and is completed.Because how to form the mode of reactive metal layer, know, for example United States Patent (USP) the 4th, 898,648,5,086,966, and disclosed in 6,325, No. 910, be therefore succinct object, do not repeat them here.
Under better, this active metal aqueous solution 6 has 10-70ppm palladium concentration and is a kind of palladium-tin colloid solution (Pd-Tin colloid solution).
Under better, the color that the anti-coating 3 of this hydrophobicity has a kind of dead color is beneficial to laser-induced thermal etching and focuses.Under better, the anti-coating 3 of this hydrophobicity of laser-induced thermal etching is to use yttrium-aluminium garnet (yttrium aluminum garnet) laser light to complete.The operating condition of this laser light is: 4-10W laser energy (laser power), 5-30KHz frequency (power frequency), and the electric energy density of 1-7% (power density).Because laser-induced thermal etching layer of metal layer is known, for example United States Patent (USP) the 4th, and therefore 898, No. 648 and disclose in early days No. 13/035531 be succinct object, do not repeat them here.
When electroless solution is to use copper chemical plating fluid when forming this electroless plated metal layer 5 in this reactive metal layer 4, electroless plating operates in the temperature of 50-55 ℃ and the processing time of 2-5 minute (processing time).When electroless solution is to use nickel chemical plating fluid when forming this electroless plated metal layer 5 in this reactive metal layer 4, electroless plating operates in the temperature of a 40-45 ℃ and the processing procedure time of a 2-5 minute.
The present invention by be formed with patterning perforation 32 the anti-coating 3 of hydrophobicity and can be simply and effectively on this base material 2, form the reactive metal layer 4 of electroless plating institute palpus, and can form whereby a circuit pattern that is embedded in the anti-coating 3 of this hydrophobicity.
But above-described is only preferred embodiment of the present invention, when not limiting scope of the invention process with this, be that every simple equivalence of doing according to the claims in the present invention book and invention description content changes and modifies, all still remain within the scope of the patent.
Claims (23)
1. a conducting wire device, is characterized in that this conducting wire device comprises:
A base material, has an insulation upper surface;
The anti-coating of one deck hydrophobicity, is made by a kind of hydrophobic material, is formed on this insulation upper surface, and has at least one perforation, and this perforation exposes an electroplating region of this insulation upper surface;
One deck reactive metal layer, is formed on this electroplating region and is positioned at this perforation; And
One deck electroless plated metal layer, electroless plating is in this reactive metal layer.
2. conducting wire as claimed in claim 1 device, it is characterized in that: the anti-coating of this hydrophobicity has one away from the upper surface of the insulation upper surface of this base material, this electroless plated metal layer has a upper surface, and the upper surface of this electroless plated metal layer is connected with the upper surface of the anti-coating of this hydrophobicity in fact and jointly forms a continuous plane.
3. conducting wire as claimed in claim 1 device, it is characterized in that: this hydrophobic material is a kind of hydrophobic resin, this hydrophobic resin is to be selected from Merlon, dimethyl silicone polymer adipic acid diamides, polypropylene, and one of them of the combination of described material.
4. conducting wire as claimed in claim 3 device, it is characterized in that: this Merlon has the molecular weight of a 1000-4000, the molecular weight that this dimethyl silicone polymer adipic acid diamides has a 1000-4000, and this polypropylene has the molecular weight of a 1000-4000.
5. conducting wire as claimed in claim 1 device, is characterized in that: this hydrophobic material is a kind of wax material.
6. conducting wire as claimed in claim 5 device, is characterized in that: this wax material comprises wax and a kind of inorganic oxide, and this inorganic oxide is to be selected from silicon dioxide, titanium dioxide, magnesium oxide, zirconia, and one of them of the combination of described material.
7. conducting wire as claimed in claim 6 device, is characterized in that: this wax material comprises 60-95wt% wax and 5-40wt% inorganic oxide.
8. conducting wire as claimed in claim 6 device, is characterized in that: this wax has one lower than the fusing point of 60 ℃.
9. conducting wire as claimed in claim 1 device, it is characterized in that: this base material is the mixture that is selected from Merlon, acrylate and acrylonitril butadiene styrene resin by a kind of, and the mixture of Merlon and acrylonitril butadiene styrene resin is made.
10. conducting wire as claimed in claim 1 device, is characterized in that: this active metal is to select from palladium, rhodium, platinum, iridium, osmium, gold, nickel, iron, and one of them of the combination of described metal material.
11. conducting wire as claimed in claim 1 devices, is characterized in that: the material of this electroless plated metal layer is to be selected from one of them of copper, gold, silver and nickel.
12. 1 kinds of methods of manufacturing conducting wire device, is characterized in that the method comprises:
(a) an insulation upper surface at a base material forms the anti-coating of hydrophobicity that one deck is made by a kind of hydrophobic material;
(b) in laser-induced thermal etching mode, on the anti-coating of this hydrophobicity, form a perforation, to expose an electroplating region of this insulation upper surface to the open air;
(c) electroplating region of insulation upper surface that makes to be formed with this base material of the anti-coating of this hydrophobicity contacts a kind of active metal aqueous solution, make the electroplating region of this insulation upper surface wetting by this active metal aqueous solution, on the electroplating region of this insulation upper surface, form whereby one deck reactive metal layer; And
(d) in electroless plating mode, in this reactive metal layer, form one deck electroless plated metal layer.
The method of 13. manufacture as claimed in claim 12 conducting wire devices, it is characterized in that: step (c) is by this base material that is formed with the anti-coating of this hydrophobicity is immersed in to this active metal aqueous solution, in this active metal aqueous solution, take out again afterwards and complete.
The method of 14. manufacture as claimed in claim 12 conducting wire devices, it is characterized in that: this hydrophobic material is a kind of hydrophobic resin, this hydrophobic resin is to be selected from Merlon, dimethyl silicone polymer adipic acid diamides, polypropylene, and one of them of the combination of described material.
The method of 15. manufacture as claimed in claim 14 conducting wire devices, it is characterized in that: this this Merlon has the molecular weight of a 1000-4000, the molecular weight that this dimethyl silicone polymer adipic acid diamides has a 1000-4000, and this polypropylene has the molecular weight of a 1000-4000.
The method of 16. manufacture as claimed in claim 12 conducting wire devices, is characterized in that: this hydrophobic material is a kind of wax material.
The method of 17. manufacture as claimed in claim 16 conducting wire devices, it is characterized in that: this wax material comprises wax and a kind of inorganic oxide, this inorganic oxide is to be selected from silicon dioxide, titanium dioxide, magnesium oxide, zirconia, and one of them of the combination of described material.
The method of 18. manufacture as claimed in claim 17 conducting wire devices, is characterized in that: this wax material comprises 60-95wt% wax and 5-40wt% inorganic oxide.
The method of 19. manufacture as claimed in claim 17 conducting wire devices, is characterized in that: this wax has one lower than the fusing point of 60 ℃.
The method of 20. manufacture one conducting wire devices as claimed in claim 12, it is characterized in that: this base material is the mixture that is selected from Merlon, acrylate and acrylonitril butadiene styrene resin by a kind of, and the mixture of Merlon and acrylonitril butadiene styrene resin is made.
The method of 21. manufacture one conducting wire devices as claimed in claim 12, is characterized in that: this active metal is to select from palladium, rhodium, platinum, iridium, osmium, gold, nickel, iron, and one of them of the combination of described metal material.
The method of 22. manufacture one conducting wire devices as claimed in claim 12, is characterized in that: the material of this electroless plated metal layer is to be selected from one of them of copper, gold, silver and nickel.
The method of 23. manufacture one conducting wire devices as claimed in claim 12, is characterized in that: the anti-coating of this hydrophobicity has a kind of color of dead color.
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| CN201210239969.5A CN103547056A (en) | 2012-07-12 | 2012-07-12 | Conducting circuit device and manufacturing method thereof |
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| CN201210239969.5A CN103547056A (en) | 2012-07-12 | 2012-07-12 | Conducting circuit device and manufacturing method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016011908A1 (en) * | 2014-07-21 | 2016-01-28 | 南通万德科技有限公司 | Electrical arc ablation-resistant tungsten alloy switch contact and preparation method for same |
| WO2016011909A1 (en) * | 2014-07-21 | 2016-01-28 | 南通万德科技有限公司 | Electrical arc ablation-resistant switch contact and preparation method for same |
| WO2016011912A1 (en) * | 2014-07-21 | 2016-01-28 | 南通万德科技有限公司 | Electrical arc ablation-resistant switch contact and preparation method for same |
| WO2016011914A1 (en) * | 2014-07-21 | 2016-01-28 | 南通万德科技有限公司 | Gold-plated switch contact and preparation method for same |
| CN106049035A (en) * | 2016-09-06 | 2016-10-26 | 复旦大学 | Establishment method of conductive circuit on surface of flexible fabric |
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| US20090065243A1 (en) * | 2001-09-28 | 2009-03-12 | Ibiden Co., Ltd. | Printed wiring board |
| CN101911846A (en) * | 2007-11-01 | 2010-12-08 | 上村工业株式会社 | Method for forming circuit |
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| US6010769A (en) * | 1995-11-17 | 2000-01-04 | Kabushiki Kaisha Toshiba | Multilayer wiring board and method for forming the same |
| US20090065243A1 (en) * | 2001-09-28 | 2009-03-12 | Ibiden Co., Ltd. | Printed wiring board |
| CN101911846A (en) * | 2007-11-01 | 2010-12-08 | 上村工业株式会社 | Method for forming circuit |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016011908A1 (en) * | 2014-07-21 | 2016-01-28 | 南通万德科技有限公司 | Electrical arc ablation-resistant tungsten alloy switch contact and preparation method for same |
| WO2016011909A1 (en) * | 2014-07-21 | 2016-01-28 | 南通万德科技有限公司 | Electrical arc ablation-resistant switch contact and preparation method for same |
| WO2016011912A1 (en) * | 2014-07-21 | 2016-01-28 | 南通万德科技有限公司 | Electrical arc ablation-resistant switch contact and preparation method for same |
| WO2016011914A1 (en) * | 2014-07-21 | 2016-01-28 | 南通万德科技有限公司 | Gold-plated switch contact and preparation method for same |
| US9905376B2 (en) | 2014-07-21 | 2018-02-27 | Nantong Memtech Technologies Co., Ltd. | Arc-ablation resistant switch contact and preparation method thereof |
| US10079119B2 (en) | 2014-07-21 | 2018-09-18 | Nantong Memtech Technologies Co., Ltd. | Arc ablation-resistant tungsten alloy switch contact and preparation method thereof |
| CN106049035A (en) * | 2016-09-06 | 2016-10-26 | 复旦大学 | Establishment method of conductive circuit on surface of flexible fabric |
| CN106049035B (en) * | 2016-09-06 | 2018-07-10 | 复旦大学 | A kind of construction method of flexible fabric surface conductance circuit |
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Application publication date: 20140129 |