CN103545715B - The manufacture method of laser array and wave multiplexer monolithic die - Google Patents
The manufacture method of laser array and wave multiplexer monolithic die Download PDFInfo
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- CN103545715B CN103545715B CN201310503604.3A CN201310503604A CN103545715B CN 103545715 B CN103545715 B CN 103545715B CN 201310503604 A CN201310503604 A CN 201310503604A CN 103545715 B CN103545715 B CN 103545715B
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Abstract
The manufacture method of a kind of laser array and wave multiplexer monolithic die, comprise: growing n-type InP resilient coating successively in N-shaped InP substrate, N-shaped AlGaInAs covering, AlGaInAs multiple quantum well layer, p-type AlGaInAs covering, InP wall, InGaAsP grating layer and InP sacrificial layer, form substrate, the side of this substrate is active area, and opposite side is wave multiplexer district; P ion is injected and rapid thermal annealing in the InP sacrificial layer in wave multiplexer district; Remove InP sacrificial layer, in the InGaAsP grating layer of active area, make grating; The InGaAsP grating layer in active area and wave multiplexer district grows p-type InP covering and p-type InGaAs contact layer; Adopt dry etching to remove p-type InGaAs contact layer, p-type InP covering, InGaAsP grating layer, InP wall, the ridge waveguide and the wave multiplexer district that form each laser element in active area form wave multiplexer ridge waveguide; The ridge waveguide of active area makes p-electrode; Thinning N-shaped InP substrate, and make n-electrode at its back side, complete preparation.
Description
Technical field
The present invention relates to field of optoelectronic devices, particularly the manufacture method of a kind of laser array and wave multiplexer monolithic die.
Background technology
The multiple-wavelength laser of single-chip integration passive light wave multiplexer is the core devices of modern wavelength division multiplexing (WDM) optical communication system, and it has compact conformation, optics and electricity junction loss little, stability and high reliability.This monolithic integrated device comprises laser array and wave multiplexer two parts, and the light that each laser sends closes ripple through wave multiplexer and exported by single waveguide.The making of laser array requires that realizing each laser has different emission wavelengths, and the making of wave multiplexer requires that light can low-lossly transmit wherein, and the emission wavelength of wave multiplexer material is generally much smaller than the emission wavelength of laser for this reason.Because this kind of device comprises various structures to realize different functions, its making is also more complicated.Wherein, laser and the requirement of optical multiplexer to waveguiding structure are different.Laser waveguide General Requirements has shallow ridge waveguide structure, the device performance degradation caused to avoid the non-radiative recombination caused by the quantum well exposed.And in order to reduce the diffraction loss of light in wave multiplexer waveguide and reduce wave multiplexer size, the etching of wave multiplexer waveguide at least will go deep into certain thickness waveguide core material usually, to provide enough light restriction factors.This makes the etching of laser and wave multiplexer two partial waveguides need substep to carry out, and adds the complexity of element manufacturing, reduces element manufacturing rate of finished products.
Summary of the invention
Main purpose of the present invention is the manufacture method providing a kind of laser array and wave multiplexer monolithic die, to simplify the manufacture craft of passive wave multiplexer and laser array monolithic integrated device.
The invention provides the manufacture method of a kind of laser array and wave multiplexer monolithic die, comprise the steps:
Step 1: growing n-type InP resilient coating successively in N-shaped InP substrate, N-shaped AlGaInAs covering, AlGaInAs multiple quantum well layer, p-type AlGaInAs covering, InP wall, InGaAsP grating layer and InP sacrificial layer, form substrate, the side of this substrate is active area, and opposite side is wave multiplexer district;
Step 2: inject P ion and rapid thermal annealing in the InP sacrificial layer in wave multiplexer district;
Step 3: remove InP sacrificial layer, makes grating in the InGaAsP grating layer of active area;
Step 4: grow p-type InP covering and p-type InGaAs contact layer on the InGaAsP grating layer in active area and wave multiplexer district;
Step 5: adopt dry etching to remove p-type InGaAs contact layer, p-type InP covering, InGaAsP grating layer, InP wall, the ridge waveguide and the wave multiplexer district that form each laser element in active area form wave multiplexer ridge waveguide;
Step 6: make p-electrode on the ridge waveguide of active area;
Step 7: thinning N-shaped InP substrate, and make n-electrode at its back side, complete preparation.
The present invention also provides the manufacture method of a kind of laser array and wave multiplexer monolithic die, comprises the steps:
Step 1: growing n-type InP resilient coating successively in N-shaped InP substrate, N-shaped AlGaInAs covering, AlGaInAs multiple quantum well layer, p-type AlGaInAs covering, InP wall, InGaAsP grating layer, form substrate, the side of this substrate is active area, and opposite side is wave multiplexer district;
Step 2: make grating in the InGaAsP grating layer of active area;
Step 3: grow p-type InP covering and p-type InGaAs contact layer on the InGaAsP grating layer in active area and wave multiplexer district;
Step 4: at wave multiplexer district sputtering SiO
2and rapid thermal annealing;
Step 5: adopt dry etching to remove p-type InGaAs contact layer, p-type InP covering, InGaAsP grating layer, InP wall, the ridge waveguide and the wave multiplexer district that form each laser element in active area form wave multiplexer ridge waveguide;
Step 6: make p-electrode on the ridge waveguide of active area;
Step 7: thinning N-shaped InP substrate, and make n-electrode at its back side, complete preparation.
As can be seen from technique scheme, the present invention has following beneficial effect:
Grating layer material in ridge waveguide etching process outside ridge waveguide is removed, and makes light have enough restriction factors in wave multiplexer waveguide, is conducive to reducing optical diffraction loss and reducing wave multiplexer size.For laser, because grating layer is on quantum well layer, laser performance is not affected to its etching.Utilize p-type AlGaInAs covering as etching stop layer, during dry etching ridge waveguide, etching stops and this layer automatically, forms laser and wave multiplexer ridge waveguide simultaneously, simplifies device making technics.
Accompanying drawing explanation
For further illustrating content of the present invention, below in conjunction with embodiment and accompanying drawing, the present invention is described further, wherein:
Fig. 1 is the laser array chip Making programme figure of the first embodiment of the present invention;
Fig. 2 is the laser array chip Making programme figure of the second embodiment of the present invention;
Fig. 3-Fig. 8 is the structural representation of each making step of the present invention, wherein Fig. 5, Fig. 7 corresponding diagram 4,6 respectively, and be vertical view, Fig. 8 is the ridge waveguide structure chart after completing.
Embodiment
Referring to Fig. 1, is the first embodiment of the present invention, in conjunction with consulting shown in Fig. 3 to Fig. 8, the invention provides the manufacture method of a kind of laser array and wave multiplexer monolithic die, comprising the steps:
Step 1: growing n-type InP resilient coating 2 successively in N-shaped InP substrate 1, N-shaped AlGaInAs covering 3, AlGaInAs multiple quantum well layer 4, p-type AlGaInAs covering 5, InP wall 6, InGaAsP grating layer 7, InP sacrificial layer 8, forms substrate, as Fig. 3, the side of this substrate is active area A, and opposite side is wave multiplexer district D, as Fig. 4.AlGaInAs multiple quantum well layer 4 comprises more than 2 AlGaInAs quantum well and upper and lower two AlGaInAs graded-index layer.InP wall 6 can not be had in device yet;
Step 2: inject P ion and rapid thermal annealing in the InP sacrificial layer 8 of wave multiplexer district D; In InP sacrificial layer 8, introduce a large amount of point defect by P ion implantation, rapid thermal annealing makes point defect move to quantum well layer 4, promotes quantum well and element counterdiffusion in building, its emission wavelength is shortened, thus light can low-loss transmission in wave multiplexer w waveguide.And owing to not having ion implantation in laser district A, quantum well radiation wavelength is constant.
Step 3: make grating 9 after removing InP sacrificial layer 8 in the grating layer 7 of active area A; Grating 9 is made in the Zone Full of active area A as shown in Figure 4,5, or a part of region B of active area A, as shown in Figure 6,7.Emission wavelength λ=the 2neffA of laser, wherein neff is effective refractive index.By adopting suitable screen periods
the emission wavelength of Shi Tu6Zhong B district laser is greater than the emission wavelength of multiple quantum well layer 4, and M district becomes modulator region, utilizes the modulation that quantum limit Stark effect can realize the laser luminescence of B district.For each laser, the cycle of grating 9 can be similar and different.Width by changing each laser ridge waveguide when screen periods is identical realizes different emission wavelengths.
Step 4: grow p-type InP covering 10 and p-type InGaAs contact layer 11 on the InGaAsP grating layer 7 of active area A and wave multiplexer district D;
Step 5: adopt dry etching to remove part of p-type InGaAs contact layer 11, p-type InP covering 10, InGaAsP grating layer 7 and InP wall 6, the ridge waveguide a1 of each laser element is formed at active area A, a2, a3 ..., an and wave multiplexer district D forms wave multiplexer ridge waveguide W (Fig. 8); Grating layer material 7 in ridge waveguide (Fig. 8) etching process outside ridge waveguide is removed, and makes light have enough restriction factors in wave multiplexer waveguide W, is conducive to reducing optical diffraction loss and reducing wave multiplexer size.For laser, because grating layer 7 is on quantum well layer 4, laser performance is not affected to its etching.Utilize p-type AlGaInAs covering 5 as etching stop layer, during dry etching ridge waveguide, etching stops and this layer automatically, forms laser and wave multiplexer ridge waveguide simultaneously, simplifies device making technics.The ridge waveguide a1 of active area A, a2, a3 ..., an has identical waveguiding structure as shown in Figure 8 with wave multiplexer waveguide W.A district laser array laser element number is n, n>=2.The wave multiplexer of optical multiplexer district D is multiple-mode interfence wave multiplexer or array waveguide grating wave multiplexer.
Step 6: at the ridge waveguide a1 of active area A, a2, a3 ..., an upper making p-electrode 12.For the device being manufactured with modulator M, to need first to remove between laser district B and modulator region D isolated area C upper contact layer material 11 and ion implantation carries out electric isolution, as Fig. 6;
Step 7: organic semiconductor device 1 also makes N electrode 13.
Referring again to Fig. 2, be the second embodiment of the present invention, in conjunction with consulting shown in Fig. 3-Fig. 8, the manufacture method of a kind of laser array of the present invention and wave multiplexer monolithic die, is characterized in that, comprises following making step:
Step 1: growing n-type InP resilient coating 2 successively in N-shaped InP substrate 1, N-shaped AlGaInAs covering 3, AlGaInAs multiple quantum well layer 4, p-type AlGaInAs covering 5, InP wall 6, InGaAsP grating layer 7, form substrate, as Fig. 3, the side of this substrate is active area A, opposite side is wave multiplexer district D, as Fig. 4.AlGaInAs multiple quantum well layer 4 comprises more than 2 AlGaInAs quantum well and upper and lower two AlGaInAs graded-index layer.InP wall 6 can not be had in device yet;
Step 2: make grating 9 in the grating layer 7 of active area A; Grating 9 is made in the Zone Full of active area A as shown in Figure 4,5, or a part of region B of active area A, as shown in Figure 6,7.Emission wavelength λ=the 2neffA of laser, wherein neff is effective refractive index.By adopting suitable screen periods
the emission wavelength of Shi Tu6Zhong B district laser is greater than the emission wavelength of multiple quantum well layer 4, and M district becomes modulator region, utilizes the modulation that quantum limit Stark effect can realize the laser luminescence of B district.For each laser, the cycle of grating 9 can be similar and different.Width by changing each laser ridge waveguide when screen periods is identical realizes different emission wavelengths.
Step 3: grow p-type InP covering 10 and p-type InGaAs contact layer 11 on the InGaAsP grating layer 7 of active area A and wave multiplexer district D;
Step 4: sputter SiO at device wave multiplexer district D
2and rapid thermal annealing; Utilize the SiO of sputtering
2the diffusion of the point defect produced promotes to make the counterdiffusion of element in quantum well and base the emission wavelength blue shift of multiple quantum well layer 4 in D district, realize light low-loss transmission in wave multiplexer waveguide W;
Step 5: adopt dry etching to remove part of p-type InGaAs contact layer 11, p-type InP covering 10, InGaAsP grating layer 7 and InP wall 6, the ridge waveguide a1 of each laser element is formed at active area A, a2, a3 ..., an and wave multiplexer district D forms wave multiplexer ridge waveguide W (Fig. 8); Grating layer material 7 in ridge waveguide (Fig. 8) etching process outside ridge waveguide is removed, and makes light have enough restriction factors in wave multiplexer waveguide W, is conducive to reducing optical diffraction loss and reducing wave multiplexer size.For laser, because grating layer 7 is on quantum well layer 4, laser performance is not affected to its etching.Utilize p-type AlGaInAs covering 5 as etching stop layer, during dry etching ridge waveguide, etching stops and this layer automatically, forms laser and wave multiplexer ridge waveguide simultaneously, simplifies device making technics.The ridge waveguide a1 of active area A, a2, a3 ..., an has identical waveguiding structure as shown in Figure 8 with wave multiplexer waveguide W.A district laser array laser element number is n, n>=2.The wave multiplexer of optical multiplexer district D is multiple-mode interfence wave multiplexer or array waveguide grating wave multiplexer.
Step 6: at the ridge waveguide a1 of active area A, a2, a3 ..., an upper making p-electrode 12.For the device being manufactured with modulator M, to need first to remove between laser district B and modulator region D isolated area C upper contact layer material 11 and ion implantation carries out electric isolution, as Fig. 6;
Step 7: organic semiconductor device 1 also makes N electrode 13.
Above-described system block diagram and implementing circuit figure; to object of the present invention; technical scheme and beneficial effect further describe; be understood that; the foregoing is only specific embodiments of the invention, be not limited to the present invention, within the spirit and principles in the present invention all; any amendment of making, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a manufacture method for laser array and wave multiplexer monolithic die, comprises the steps:
Step 1: growing n-type InP resilient coating successively in N-shaped InP substrate, N-shaped AlGaInAs covering, AlGaInAs multiple quantum well layer, p-type AlGaInAs covering, InP wall, InGaAsP grating layer and InP sacrificial layer, form substrate, the side of this substrate is active area, and opposite side is wave multiplexer district;
Step 2: inject P ion and rapid thermal annealing in the InP sacrificial layer in wave multiplexer district;
Step 3: remove InP sacrificial layer, makes grating in the InGaAsP grating layer of active area;
Step 4: grow p-type InP covering and p-type InGaAs contact layer on the InGaAsP grating layer in active area and wave multiplexer district;
Step 5: adopt dry etching to remove p-type InGaAs contact layer, p-type InP covering, InGaAsP grating layer, InP wall, the ridge waveguide and the wave multiplexer district that form each laser element in active area form wave multiplexer ridge waveguide;
Step 6: make p-electrode on the ridge waveguide of active area;
Step 7: thinning N-shaped InP substrate, and make n-electrode at its back side, complete preparation.
2. a manufacture method for laser array and wave multiplexer monolithic die, comprises the steps:
Step 1: growing n-type InP resilient coating successively in N-shaped InP substrate, N-shaped AlGaInAs covering, AlGaInAs multiple quantum well layer, p-type AlGaInAs covering, InP wall, InGaAsP grating layer, form substrate, the side of this substrate is active area, and opposite side is wave multiplexer district;
Step 2: make grating in the InGaAsP grating layer of active area;
Step 3: grow p-type InP covering and p-type InGaAs contact layer on the InGaAsP grating layer in active area and wave multiplexer district;
Step 4: at wave multiplexer district sputtering SiO
2and rapid thermal annealing;
Step 5: adopt dry etching to remove p-type InGaAs contact layer, p-type InP covering, InGaAsP grating layer, InP wall, the ridge waveguide and the wave multiplexer district that form each laser element in active area form wave multiplexer ridge waveguide;
Step 6: make p-electrode on the ridge waveguide of active area;
Step 7: thinning N-shaped InP substrate, and make n-electrode at its back side, complete preparation.
3. the manufacture method of laser array according to claim 1 and 2 and wave multiplexer monolithic die, wherein p-type AlGaInAs covering is the etching stop layer of dry etching.
4. the manufacture method of laser array according to claim 1 and 2 and wave multiplexer monolithic die, the cycle of wherein said grating is identical or different.
5. the manufacture method of laser array according to claim 1 and 2 and wave multiplexer monolithic die, the wave multiplexer in wherein said wave multiplexer district is multiple-mode interfence wave multiplexer or array waveguide grating wave multiplexer.
6. the manufacture method of laser array according to claim 1 and 2 and wave multiplexer monolithic die, the Zone Full of wherein said preparing grating in active area or subregion.
7. the manufacture method of laser array according to claim 1 and 2 and wave multiplexer monolithic die, the number of wherein said laser element is n, n>=2.
8. the manufacture method of laser array according to claim 1 and 2 and wave multiplexer monolithic die, wherein the width of the ridge waveguide of laser element is similar and different.
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| TWI617081B (en) * | 2017-03-23 | 2018-03-01 | 國立中山大學 | Method for fabricating waveguide construction |
| CN109256675A (en) * | 2018-09-30 | 2019-01-22 | 武汉电信器件有限公司 | Electro-absorption modulation integration laser chip and preparation method thereof |
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| EP3879645A4 (en) * | 2018-11-29 | 2022-04-06 | Huawei Technologies Co., Ltd. | Two-section dbr laser and monolithic integrated array light source chip |
| CN112670823B (en) * | 2020-12-23 | 2022-03-11 | 中国科学院半导体研究所 | Method for manufacturing electric absorption modulation laser |
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| GB0002775D0 (en) * | 2000-02-07 | 2000-03-29 | Univ Glasgow | Improved integrated optical devices |
| US7277462B2 (en) * | 2004-04-29 | 2007-10-02 | Avago Technologies Fiber (Singapore) Pte. Ltd. | Wide tuneable laser sources |
| CN101697341B (en) * | 2009-10-29 | 2011-11-30 | 浙江大学 | Method for mixing quantum wells |
| CN101938083B (en) * | 2010-07-14 | 2011-08-31 | 中国科学院半导体研究所 | Manufacture method of bi-distributed feedback laser double-amplifier based on gamma waveguide |
| CN102487104B (en) * | 2010-12-06 | 2014-01-08 | 中国科学院微电子研究所 | Multi-quantum well energy band mixing method in silicon-based photoelectric heterogeneous integration |
| CN103311807B (en) * | 2013-06-09 | 2015-04-08 | 中国科学院半导体研究所 | Manufacturing method of multi-wavelength laser array chip |
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| TWI617081B (en) * | 2017-03-23 | 2018-03-01 | 國立中山大學 | Method for fabricating waveguide construction |
| US9946021B1 (en) | 2017-03-23 | 2018-04-17 | National Sun Yat-Sen University | Method for fabricating waveguide construction |
| CN109256675A (en) * | 2018-09-30 | 2019-01-22 | 武汉电信器件有限公司 | Electro-absorption modulation integration laser chip and preparation method thereof |
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