CN103545715B - The manufacture method of laser array and wave multiplexer monolithic die - Google Patents
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Abstract
一种激光器阵列与合波器单片集成芯片的制作方法，包括：在n型InP衬底上依次生长n型InP缓冲层，n型AlGaInAs包层，AlGaInAs多量子阱层，p型AlGaInAs包层，InP间隔层，InGaAsP光栅层和InP牺牲层，形成基片，该基片的一侧为有源区，另一侧为合波器区；在合波器区的InP牺牲层中注入P离子并快速热退火；去掉InP牺牲层，在有源区的InGaAsP光栅层中制作光栅；在有源区和合波器区的InGaAsP光栅层上生长p型InP包层及p型InGaAs接触层；采用干法刻蚀去除p型InGaAs接触层，p型InP包层，InGaAsP光栅层，InP间隔层，在有源区形成各激光器单元的脊型波导及合波器区形成合波器脊型波导；在有源区的脊型波导上制作p电极；减薄n型InP衬底，并在其背面制作n电极，完成制备。
A method for manufacturing a monolithic integrated chip of a laser array and a multiplexer, comprising: sequentially growing an n-type InP buffer layer, an n-type AlGaInAs cladding layer, an AlGaInAs multi-quantum well layer, and a p-type AlGaInAs cladding layer on an n-type InP substrate , InP spacer layer, InGaAsP grating layer and InP sacrificial layer to form a substrate, one side of the substrate is the active area, and the other side is the wave combiner area; P ions are implanted in the InP sacrificial layer in the wave combiner area and rapid thermal annealing; remove the InP sacrificial layer, and make a grating in the InGaAsP grating layer in the active area; grow a p-type InP cladding layer and a p-type InGaAs contact layer on the InGaAsP grating layer in the active area and the combiner area; The p-type InGaAs contact layer, p-type InP cladding layer, InGaAsP grating layer, and InP spacer layer are etched and removed, and the ridge waveguide of each laser unit is formed in the active area and the ridge waveguide of the combiner is formed in the combiner area; The p-electrode is made on the ridge waveguide in the active area; the n-type InP substrate is thinned, and the n-electrode is made on the back side to complete the preparation.
Description
技术领域technical field
本发明涉及光电子器件领域，特别涉及一种激光器阵列与合波器单片集成芯片的制作方法。The invention relates to the field of optoelectronic devices, in particular to a method for manufacturing a monolithic integrated chip of a laser array and a multiplexer.
背景技术Background technique
单片集成无源光合波器的多波长激光器是现代波分复用(WDM)光通信系统的核心器件，其具有结构紧凑，光学和电学连接损耗小，稳定性和可靠性高等优点。这种单片集成器件包括激光器阵列及合波器两个部分，各个激光器发出的光经过合波器合波由单根波导输出。激光器阵列的制作要求实现各个激光器具有不同的发光波长，而合波器的制作要求光在其中能够低损耗的传输，为此合波器材料的发光波长一般远小于激光器的发光波长。由于该种器件包含多种结构以实现不同的功能，其制作也较复杂。其中，激光器和光合波器对波导结构的要求是不同的。激光器波导一般要求具有浅脊波导结构，以避免由暴露的量子阱引起的非辐射复合所导致的器件性能严重下降。而为了减少光在合波器波导中的衍射损耗及减小合波器尺寸，合波器波导的刻蚀通常至少要深入一定厚度的波导核心材料，以提供足够的光限制因子。这使得激光器及合波器两个部分波导的刻蚀需要分步进行，增加了器件制作的复杂度，降低了器件制作成品率。The multi-wavelength laser with monolithic integrated passive optical multiplexer is the core device of modern wavelength division multiplexing (WDM) optical communication system, which has the advantages of compact structure, low optical and electrical connection loss, high stability and reliability. This monolithic integrated device includes two parts: a laser array and a multiplexer. The light emitted by each laser is combined by the multiplexer and output by a single waveguide. The fabrication of the laser array requires that each laser has a different emission wavelength, and the fabrication of the multiplexer requires that the light can be transmitted in it with low loss. Therefore, the emission wavelength of the material of the multiplexer is generally much smaller than the emission wavelength of the laser. Because this kind of device contains multiple structures to realize different functions, its fabrication is also relatively complicated. Among them, lasers and optical combiners have different requirements on the waveguide structure. Laser waveguides generally require shallow ridge waveguide structures to avoid severe degradation of device performance caused by non-radiative recombination caused by exposed quantum wells. In order to reduce the diffraction loss of light in the waveguide of the combiner and reduce the size of the combiner, the etching of the waveguide of the combiner usually needs to penetrate at least a certain thickness of the core material of the waveguide to provide a sufficient light confinement factor. This makes the etching of the two parts of the waveguide of the laser and the multiplexer need to be carried out step by step, which increases the complexity of device fabrication and reduces the yield of device fabrication.
发明内容Contents of the invention
本发明的主要目的在于提供一种激光器阵列与合波器单片集成芯片的制作方法，以简化无源合波器与激光器阵列单片集成器件的制作工艺。The main purpose of the present invention is to provide a method for manufacturing a monolithic integrated chip of a laser array and a multiplexer, so as to simplify the manufacturing process of a monolithic integrated device of a passive multiplexer and a laser array.
本发明提供一种激光器阵列与合波器单片集成芯片的制作方法，包括如下步骤：The invention provides a method for manufacturing a monolithic integrated chip of a laser array and a multiplexer, comprising the following steps:
步骤1：在n型InP衬底上依次生长n型InP缓冲层，n型AlGaInAs包层，AlGaInAs多量子阱层，p型AlGaInAs包层，InP间隔层，InGaAsP光栅层和InP牺牲层，形成基片，该基片的一侧为有源区，另一侧为合波器区；Step 1: On the n-type InP substrate, grow an n-type InP buffer layer, an n-type AlGaInAs cladding layer, an AlGaInAs multi-quantum well layer, a p-type AlGaInAs cladding layer, an InP spacer layer, an InGaAsP grating layer and an InP sacrificial layer to form a substrate One side of the substrate is the active area, and the other side is the combiner area;
步骤2：在合波器区的InP牺牲层中注入P离子并快速热退火；Step 2: Implant P ions into the InP sacrificial layer in the combiner area and perform rapid thermal annealing;
步骤3：去掉InP牺牲层，在有源区的InGaAsP光栅层中制作光栅；Step 3: remove the InP sacrificial layer, and make a grating in the InGaAsP grating layer in the active region;
步骤4：在有源区和合波器区的InGaAsP光栅层上生长p型InP包层及p型InGaAs接触层；Step 4: growing a p-type InP cladding layer and a p-type InGaAs contact layer on the InGaAsP grating layer in the active region and the combiner region;
步骤5：采用干法刻蚀去除p型InGaAs接触层，p型InP包层，InGaAsP光栅层，InP间隔层，在有源区形成各激光器单元的脊型波导及合波器区形成合波器脊型波导；Step 5: Use dry etching to remove the p-type InGaAs contact layer, p-type InP cladding layer, InGaAsP grating layer, and InP spacer layer, and form the ridge waveguide of each laser unit in the active area and the multiplexer area to form a multiplexer Ridge waveguide;
步骤6：在有源区的脊型波导上制作p电极；Step 6: Fabricate a p-electrode on the ridge waveguide in the active area;
步骤7：减薄n型InP衬底，并在其背面制作n电极，完成制备。Step 7: Thinning the n-type InP substrate, and fabricating an n-electrode on its back, to complete the preparation.
本发明还提供一种激光器阵列与合波器单片集成芯片的制作方法，包括如下步骤：The present invention also provides a method for manufacturing a monolithic integrated chip of a laser array and a multiplexer, comprising the following steps:
步骤1：在n型InP衬底上依次生长n型InP缓冲层，n型AlGaInAs包层，AlGaInAs多量子阱层，p型AlGaInAs包层，InP间隔层，InGaAsP光栅层，形成基片，该基片的一侧为有源区，另一侧为合波器区；Step 1: On the n-type InP substrate, grow an n-type InP buffer layer, an n-type AlGaInAs cladding layer, an AlGaInAs multi-quantum well layer, a p-type AlGaInAs cladding layer, an InP spacer layer, and an InGaAsP grating layer to form a substrate. One side of the chip is the active area, and the other side is the combiner area;
步骤2：在有源区的InGaAsP光栅层中制作光栅；Step 2: making a grating in the InGaAsP grating layer in the active area;
步骤3：在有源区和合波器区的InGaAsP光栅层上生长p型InP包层及p型InGaAs接触层；Step 3: growing a p-type InP cladding layer and a p-type InGaAs contact layer on the InGaAsP grating layer in the active region and the combiner region;
步骤4：在合波器区溅射SiO2并快速热退火；Step 4: Sputter SiO2 and rapid thermal annealing in the combiner area;
步骤5：采用干法刻蚀去除p型InGaAs接触层，p型InP包层，InGaAsP光栅层，InP间隔层，在有源区形成各激光器单元的脊型波导及合波器区形成合波器脊型波导；Step 5: Use dry etching to remove the p-type InGaAs contact layer, p-type InP cladding layer, InGaAsP grating layer, and InP spacer layer, and form the ridge waveguide of each laser unit in the active area and the multiplexer area to form a multiplexer Ridge waveguide;
步骤6：在有源区的脊型波导上制作p电极；Step 6: Fabricate a p-electrode on the ridge waveguide in the active area;
步骤7：减薄n型InP衬底，并在其背面制作n电极，完成制备。Step 7: Thinning the n-type InP substrate, and fabricating an n-electrode on its back, to complete the preparation.
从上述技术方案可以看出，本发明具有以下有益效果：As can be seen from the foregoing technical solutions, the present invention has the following beneficial effects:
脊波导刻蚀过程中脊型波导之外的光栅层材料被去除，使得光在合波器波导中具有足够的限制因子，有利于减少光衍射损耗及减小合波器尺寸。对于激光器，由于光栅层在量子阱层之上，对其刻蚀不影响激光器性能。利用p型AlGaInAs包层作为刻蚀停止层，干法刻蚀脊型波导时刻蚀自动停止与该层，同时形成激光器及合波器脊型波导，简化了器件制作工艺。The material of the grating layer outside the ridge waveguide is removed during the etching process of the ridge waveguide, so that the light has a sufficient confinement factor in the waveguide of the combiner, which is beneficial to reduce the light diffraction loss and reduce the size of the combiner. For lasers, since the grating layer is above the quantum well layer, its etching does not affect the performance of the laser. The p-type AlGaInAs cladding layer is used as an etching stop layer, and the etching automatically stops with this layer when the ridge waveguide is dry-etched, and the laser and the wave combiner ridge waveguide are formed at the same time, which simplifies the device manufacturing process.
附图说明Description of drawings
为进一步说明本发明的内容，以下结合实施例及附图对本发明进行进一步描述，其中：In order to further illustrate content of the present invention, the present invention is further described below in conjunction with embodiment and accompanying drawing, wherein:
图1为本发明的第一实施例的激光器阵列芯片制作流程图；Fig. 1 is the fabrication flowchart of the laser array chip of the first embodiment of the present invention;
图2为本发明的第二实施例的激光器阵列芯片制作流程图；Fig. 2 is the fabrication flowchart of the laser array chip of the second embodiment of the present invention;
图3-图8为本发明各制作步骤的结构示意图，其中图5、图7分别对应图4、6，为俯视图，图8为制作完成后的脊型波导结构图。Figures 3-8 are structural schematic diagrams of each manufacturing step of the present invention, wherein Figures 5 and 7 correspond to Figures 4 and 6 respectively, and are top views, and Figure 8 is a structure diagram of the ridge waveguide after fabrication.
具体实施方式detailed description
请参阅图1，为本发明的第一实施例，结合参阅图3至图8所示，本发明提供一种激光器阵列与合波器单片集成芯片的制作方法，包括如下步骤：Please refer to Fig. 1, which is the first embodiment of the present invention. In conjunction with Fig. 3 to Fig. 8, the present invention provides a method for manufacturing a monolithic integrated chip of a laser array and a multiplexer, comprising the following steps:
步骤1：在n型InP衬底1上依次生长n型InP缓冲层2，n型AlGaInAs包层3，AlGaInAs多量子阱层4，p型AlGaInAs包层5，InP间隔层6，InGaAsP光栅层7，InP牺牲层8，形成基片，如图3，该基片的一侧为有源区A，另一侧为合波器区D，如图4。AlGaInAs多量子阱层4包括2个以上AlGaInAs量子阱及上下两个AlGaInAs折射率渐变层。器件中也可以没有InP间隔层6；Step 1: On the n-type InP substrate 1, grow n-type InP buffer layer 2, n-type AlGaInAs cladding layer 3, AlGaInAs multi-quantum well layer 4, p-type AlGaInAs cladding layer 5, InP spacer layer 6, and InGaAsP grating layer 7 sequentially , InP sacrificial layer 8, forming a substrate, as shown in Figure 3, one side of the substrate is the active region A, and the other side is the multiplexer region D, as shown in Figure 4. The AlGaInAs multi-quantum well layer 4 includes more than two AlGaInAs quantum wells and two upper and lower AlGaInAs refractive index gradient layers. There may be no InP spacer layer 6 in the device;
步骤2：在合波器区D的InP牺牲层8中注入P离子并快速热退火；通过P离子注入在InP牺牲层8中引入大量点缺陷，快速热退火使点缺陷向量子阱层4移动，促进量子阱及垒中元素互扩散，使其发光波长变短，从而光可以在合波器w波导中低损耗的传输。而激光器区A中由于没有离子注入，量子阱发光波长不变。Step 2: Implant P ions into the InP sacrificial layer 8 in the combiner area D and perform rapid thermal annealing; introduce a large number of point defects into the InP sacrificial layer 8 by P ion implantation, and rapid thermal annealing moves the point defects to the quantum well layer 4 , to promote the interdiffusion of elements in the quantum well and the barrier, so that the wavelength of light emission is shortened, so that light can be transmitted with low loss in the waveguide of the multiplexer w. In the laser region A, because there is no ion implantation, the emission wavelength of the quantum well remains unchanged.
步骤3：去掉InP牺牲层8后在有源区A的光栅层7中制作光栅9；光栅9制作于有源区A的全部区域如图4、5所示，或有源区A的一部分区域B，如图6、7所示。激光器的发光波长λ＝2neffA，其中neff为有效折射率。通过采用适当的光栅周期使图6中B区激光器的发光波长大于多量子阱层4的发光波长，M区成为调制器区，利用量子限制斯塔克效应可实现对B区激光器发光的调制。对于各激光器，光栅9的周期可为不同或相同。光栅周期相同时通过改变各个激光器脊型波导的宽度来实现不同的发光波长。Step 3: Fabricate a grating 9 in the grating layer 7 of the active area A after removing the InP sacrificial layer 8; the grating 9 is fabricated in the entire area of the active area A as shown in Figures 4 and 5, or a part of the active area A B, as shown in Figures 6 and 7. The emission wavelength of the laser is λ=2neffA, where neff is the effective refractive index. By using an appropriate grating period In FIG. 6, the emission wavelength of the laser in the B region is greater than the emission wavelength of the multi-quantum well layer 4, and the M region becomes a modulator region, and the modulation of the emission of the laser in the B region can be realized by using the quantum confinement Stark effect. The period of the grating 9 can be different or the same for each laser. When the grating period is the same, different emission wavelengths can be realized by changing the width of each laser ridge waveguide.
步骤4：在有源区A和合波器区D的InGaAsP光栅层7上生长p型InP包层10及p型InGaAs接触层11；Step 4: growing a p-type InP cladding layer 10 and a p-type InGaAs contact layer 11 on the InGaAsP grating layer 7 in the active region A and the multiplexer region D;
步骤5：采用干法刻蚀去除部分p型InGaAs接触层11，p型InP包层10，InGaAsP光栅层7及InP间隔层6，在有源区A形成各激光器单元的脊型波导a1，a2，a3，…，an及合波器区D形成合波器脊型波导W(图8)；脊波导(图8)刻蚀过程中脊型波导之外的光栅层材料7被去除，使得光在合波器波导W中具有足够的限制因子，有利于减少光衍射损耗及减小合波器尺寸。对于激光器，由于光栅层7在量子阱层4之上，对其刻蚀不影响激光器性能。利用p型AlGaInAs包层5作为刻蚀停止层，干法刻蚀脊型波导时刻蚀自动停止与该层，同时形成激光器及合波器脊型波导，简化了器件制作工艺。有源区A的脊型波导a1，a2，a3，…，an与合波器波导W具有如图8所示的相同的波导结构。A区激光器阵列激光器单元数目为n，n>=2。光合波器区D的合波器为多模干涉合波器或阵列波导光栅合波器。Step 5: Remove part of the p-type InGaAs contact layer 11, p-type InP cladding layer 10, InGaAsP grating layer 7 and InP spacer layer 6 by dry etching, and form the ridge waveguides a1 and a2 of each laser unit in the active area A , a3,..., an and the combiner area D form the combiner ridge waveguide W (Fig. 8); the grating layer material 7 outside the ridge waveguide is removed during the etching process of the ridge waveguide (Fig. 8), so that the light There is a sufficient confinement factor in the waveguide W of the multiplexer, which is beneficial to reduce the light diffraction loss and reduce the size of the multiplexer. For the laser, since the grating layer 7 is on the quantum well layer 4, its etching does not affect the performance of the laser. Using the p-type AlGaInAs cladding layer 5 as an etching stop layer, the etching automatically stops with this layer when the ridge waveguide is dry-etched, and simultaneously forms the laser and the wave combiner ridge waveguide, which simplifies the device manufacturing process. The ridge waveguides a1 , a2 , a3 , . . . , an of the active area A have the same waveguide structure as the waveguide W of the combiner as shown in FIG. 8 . The number of laser units in the laser array in area A is n, n>=2. The multiplexers in the optical combiner area D are multimode interference multiplexers or arrayed waveguide grating multiplexers.
步骤6：在有源区A的脊型波导a1，a2，a3，…，an上制作p电极12。对于制作有调制器M的器件，需要先去掉激光器区B与调制器区D之间隔离区C上部接触层材料11并离子注入进行电隔离，如图6；Step 6: Fabricate p-electrodes 12 on the ridge waveguides a1, a2, a3, . . . , an of the active region A. For a device with a modulator M, it is necessary to first remove the upper contact layer material 11 of the isolation region C between the laser region B and the modulator region D, and conduct ion implantation for electrical isolation, as shown in Figure 6;
步骤7：减薄衬底1并制作N电极13。Step 7: Thinning the substrate 1 and fabricating the N electrode 13 .
请再参阅图2，为本发明的第二实施例，结合参阅图3-图8所示，本发明一种激光器阵列与合波器单片集成芯片的制作方法，其特征在于，包括如下制作步骤：Please refer to Fig. 2 again, it is the second embodiment of the present invention, as shown in Fig. 3-Fig. step:
步骤1：在n型InP衬底1上依次生长n型InP缓冲层2，n型AlGaInAs包层3，AlGaInAs多量子阱层4，p型AlGaInAs包层5，InP间隔层6，InGaAsP光栅层7，形成基片，如图3，该基片的一侧为有源区A，另一侧为合波器区D，如图4。AlGaInAs多量子阱层4包括2个以上AlGaInAs量子阱及上下两个AlGaInAs折射率渐变层。器件中也可以没有InP间隔层6；Step 1: On the n-type InP substrate 1, grow n-type InP buffer layer 2, n-type AlGaInAs cladding layer 3, AlGaInAs multi-quantum well layer 4, p-type AlGaInAs cladding layer 5, InP spacer layer 6, and InGaAsP grating layer 7 sequentially , forming a substrate, as shown in Figure 3, one side of the substrate is the active region A, and the other side is the multiplexer region D, as shown in Figure 4. The AlGaInAs multi-quantum well layer 4 includes more than two AlGaInAs quantum wells and two upper and lower AlGaInAs refractive index gradient layers. There may be no InP spacer layer 6 in the device;
步骤2：在有源区A的光栅层7中制作光栅9；光栅9制作于有源区A的全部区域如图4、5所示，或有源区A的一部分区域B，如图6、7所示。激光器的发光波长λ=2neffA，其中neff为有效折射率。通过采用适当的光栅周期使图6中B区激光器的发光波长大于多量子阱层4的发光波长，M区成为调制器区，利用量子限制斯塔克效应可实现对B区激光器发光的调制。对于各激光器，光栅9的周期可为不同或相同。光栅周期相同时通过改变各个激光器脊型波导的宽度来实现不同的发光波长。Step 2: Fabricate a grating 9 in the grating layer 7 of the active area A; the grating 9 is fabricated in the entire area of the active area A as shown in Figures 4 and 5, or a part of the area B of the active area A, as shown in Figure 6, 7. The emission wavelength of the laser is λ=2neffA, where neff is the effective refractive index. By using an appropriate grating period In FIG. 6, the emission wavelength of the laser in the B region is greater than the emission wavelength of the multi-quantum well layer 4, and the M region becomes a modulator region, and the modulation of the emission of the laser in the B region can be realized by using the quantum confinement Stark effect. The period of the grating 9 can be different or the same for each laser. When the grating period is the same, different emission wavelengths can be realized by changing the width of each laser ridge waveguide.
步骤3：在有源区A和合波器区D的InGaAsP光栅层7上生长p型InP包层10及p型InGaAs接触层11；Step 3: growing a p-type InP cladding layer 10 and a p-type InGaAs contact layer 11 on the InGaAsP grating layer 7 in the active region A and the multiplexer region D;
步骤4：在器件合波器区D溅射SiO2并快速热退火；利用溅射的SiO2产生的点缺陷的扩散促进量子阱及垒中元素的互扩散，使D区中多量子阱层4的发光波长蓝移，实现光在合波器波导W中低损耗的传输；Step 4: Sputter SiO 2 in the device combiner area D and perform rapid thermal annealing; use the diffusion of point defects produced by sputtered SiO 2 to promote the interdiffusion of elements in the quantum wells and barriers, so that the multi-quantum well layer in the D area 4’s light-emitting wavelength is blue-shifted to realize low-loss transmission of light in the waveguide W of the combiner;
步骤5：采用干法刻蚀去除部分p型InGaAs接触层11，p型InP包层10，InGaAsP光栅层7及InP间隔层6，在有源区A形成各激光器单元的脊型波导a1，a2，a3，…，an及合波器区D形成合波器脊型波导W(图8)；脊波导(图8)刻蚀过程中脊型波导之外的光栅层材料7被去除，使得光在合波器波导W中具有足够的限制因子，有利于减少光衍射损耗及减小合波器尺寸。对于激光器，由于光栅层7在量子阱层4之上，对其刻蚀不影响激光器性能。利用p型AlGaInAs包层5作为刻蚀停止层，干法刻蚀脊型波导时刻蚀自动停止与该层，同时形成激光器及合波器脊型波导，简化了器件制作工艺。有源区A的脊型波导a1，a2，a3，…，an与合波器波导W具有如图8所示的相同的波导结构。A区激光器阵列激光器单元数目为n，n>=2。光合波器区D的合波器为多模干涉合波器或阵列波导光栅合波器。Step 5: Remove part of the p-type InGaAs contact layer 11, p-type InP cladding layer 10, InGaAsP grating layer 7 and InP spacer layer 6 by dry etching, and form the ridge waveguides a1 and a2 of each laser unit in the active area A , a3,..., an and the combiner area D form the combiner ridge waveguide W (Fig. 8); the grating layer material 7 outside the ridge waveguide is removed during the etching process of the ridge waveguide (Fig. 8), so that the light There is a sufficient confinement factor in the waveguide W of the multiplexer, which is beneficial to reduce the light diffraction loss and reduce the size of the multiplexer. For the laser, since the grating layer 7 is on the quantum well layer 4, its etching does not affect the performance of the laser. The p-type AlGaInAs cladding layer 5 is used as an etching stop layer, and the etching automatically stops with this layer when the ridge waveguide is dry-etched, and the laser and the wave combiner ridge waveguide are formed at the same time, which simplifies the device manufacturing process. The ridge waveguides a1 , a2 , a3 , . . . , an of the active area A have the same waveguide structure as the waveguide W of the combiner as shown in FIG. 8 . The number of laser units in the laser array in area A is n, n>=2. The multiplexers in the optical combiner area D are multimode interference multiplexers or arrayed waveguide grating multiplexers.
步骤6：在有源区A的脊型波导a1，a2，a3，…，an上制作p电极12。对于制作有调制器M的器件，需要先去掉激光器区B与调制器区D之间隔离区C上部接触层材料11并离子注入进行电隔离，如图6；Step 6: Fabricate p-electrodes 12 on the ridge waveguides a1, a2, a3, . . . , an of the active region A. For a device with a modulator M, it is necessary to first remove the upper contact layer material 11 of the isolation region C between the laser region B and the modulator region D, and conduct ion implantation for electrical isolation, as shown in Figure 6;
步骤7：减薄衬底1并制作N电极13。Step 7: Thinning the substrate 1 and fabricating the N electrode 13 .
以上所述的系统框图和实施电路图，对本发明的目的，技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。The system block diagram and implementation circuit diagram described above have further described the purpose of the present invention, technical solutions and beneficial effects in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.
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