CN103545389A - 一种多结聚光砷化镓太阳能电池及其制备方法 - Google Patents
一种多结聚光砷化镓太阳能电池及其制备方法 Download PDFInfo
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- CN103545389A CN103545389A CN201310508769.XA CN201310508769A CN103545389A CN 103545389 A CN103545389 A CN 103545389A CN 201310508769 A CN201310508769 A CN 201310508769A CN 103545389 A CN103545389 A CN 103545389A
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 148
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 23
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims description 53
- 238000000576 coating method Methods 0.000 claims description 53
- 238000002156 mixing Methods 0.000 claims description 35
- 239000000203 mixture Substances 0.000 claims description 11
- 238000005137 deposition process Methods 0.000 claims description 10
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 238000010792 warming Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 8
- 229910052732 germanium Inorganic materials 0.000 abstract description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 3
- 230000007774 longterm Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 abstract 13
- 210000004460 N cell Anatomy 0.000 abstract 1
- 230000005641 tunneling Effects 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
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- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Sustainable Energy (AREA)
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- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
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CN201310508769.XA CN103545389B (zh) | 2013-10-24 | 2013-10-24 | 一种多结聚光砷化镓太阳能电池及其制备方法 |
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CN103545389A true CN103545389A (zh) | 2014-01-29 |
CN103545389B CN103545389B (zh) | 2016-03-30 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103943712A (zh) * | 2014-05-19 | 2014-07-23 | 上海空间电源研究所 | 一种超宽带隙隧穿结 |
US9972735B2 (en) | 2015-06-12 | 2018-05-15 | Azur Space Solar Power Gmbh | Optocoupler having a semiconductor diode for each voltage source and a tunnel diode formed between each two successive voltage sources |
TWI649891B (zh) * | 2015-05-18 | 2019-02-01 | 艾澤太空太陽能公司 | 可擴展的電壓源 |
CN112349796A (zh) * | 2019-08-06 | 2021-02-09 | 东泰高科装备科技有限公司 | 砷化镓电池及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040200523A1 (en) * | 2003-04-14 | 2004-10-14 | The Boeing Company | Multijunction photovoltaic cell grown on high-miscut-angle substrate |
CN102969387A (zh) * | 2012-11-08 | 2013-03-13 | 王伟明 | GaInP/GaAs/InGaAs三结太阳能电池外延结构 |
CN103000758A (zh) * | 2012-10-08 | 2013-03-27 | 天津蓝天太阳科技有限公司 | 双面外延生长GaAs三结太阳能电池的制备方法 |
CN203536449U (zh) * | 2013-10-24 | 2014-04-09 | 广东瑞德兴阳光伏科技有限公司 | 一种多结聚光砷化镓太阳能电池 |
-
2013
- 2013-10-24 CN CN201310508769.XA patent/CN103545389B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040200523A1 (en) * | 2003-04-14 | 2004-10-14 | The Boeing Company | Multijunction photovoltaic cell grown on high-miscut-angle substrate |
CN103000758A (zh) * | 2012-10-08 | 2013-03-27 | 天津蓝天太阳科技有限公司 | 双面外延生长GaAs三结太阳能电池的制备方法 |
CN102969387A (zh) * | 2012-11-08 | 2013-03-13 | 王伟明 | GaInP/GaAs/InGaAs三结太阳能电池外延结构 |
CN203536449U (zh) * | 2013-10-24 | 2014-04-09 | 广东瑞德兴阳光伏科技有限公司 | 一种多结聚光砷化镓太阳能电池 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103943712A (zh) * | 2014-05-19 | 2014-07-23 | 上海空间电源研究所 | 一种超宽带隙隧穿结 |
TWI649891B (zh) * | 2015-05-18 | 2019-02-01 | 艾澤太空太陽能公司 | 可擴展的電壓源 |
US10872887B2 (en) | 2015-05-18 | 2020-12-22 | Azur Space Solar Power Gmbh | Scalable voltage source |
US9972735B2 (en) | 2015-06-12 | 2018-05-15 | Azur Space Solar Power Gmbh | Optocoupler having a semiconductor diode for each voltage source and a tunnel diode formed between each two successive voltage sources |
TWI649892B (zh) * | 2015-06-12 | 2019-02-01 | 艾澤太空太陽能公司 | 光電耦合器 |
CN112349796A (zh) * | 2019-08-06 | 2021-02-09 | 东泰高科装备科技有限公司 | 砷化镓电池及其制备方法 |
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CN103545389B (zh) | 2016-03-30 |
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Address after: 528437 Zhongshan Torch Development Zone, Guangdong, one of the torch Road, No. 22 Applicant after: REDSOLAR NEW ENERGY TECHNOLOGY CO., LTD. Address before: 528437 Guangdong Torch Development Zone, Zhongshan Torch Road, No. 22 Ming Yang Industrial Park Applicant before: Guangdong Ruide Xingyang Solar Technology Co., Ltd. |
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Effective date of registration: 20170327 Address after: 528437 layer 3-4, No. 22, Torch Road, Torch Development Zone, Zhongshan, Guangdong, China Patentee after: ZHONGSHAN DEHUA CHIP TECHNOLOGY CO., LTD. Address before: 528437 Zhongshan Torch Development Zone, Guangdong, one of the torch Road, No. 22 Patentee before: REDSOLAR NEW ENERGY TECHNOLOGY CO., LTD. |
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Denomination of invention: The invention relates to a multi junction concentrating gallium arsenide solar cell and a preparation method thereof Effective date of registration: 20210929 Granted publication date: 20160330 Pledgee: Industrial Bank Limited by Share Ltd. Zhongshan branch Pledgor: ZHONGSHAN DEHUA CHIP TECHNOLOGY Co.,Ltd. Registration number: Y2021980010236 |