CN103531654A - 多结光伏装置 - Google Patents

多结光伏装置 Download PDF

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CN103531654A
CN103531654A CN201310284409.6A CN201310284409A CN103531654A CN 103531654 A CN103531654 A CN 103531654A CN 201310284409 A CN201310284409 A CN 201310284409A CN 103531654 A CN103531654 A CN 103531654A
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photovoltaic devices
devices according
substrate
layer
knots
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俞荣浚
穆尼布·沃贝尔
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Zena Technologies Inc
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Zena Technologies Inc
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Abstract

本发明涉及多结光伏装置。本文揭示一种可操作以将光转化为电力的光伏装置，其包括衬底、基本上垂直于所述衬底的一个或一个以上结构，和安置在所述衬底上的反射层，以及共形安置在所述一个或一个以上结构上的一个或一个以上结。

Description

多结光伏装置
相关申请案的交叉参考
本申请案与第12/621497号、第12/633297号、第61/266064号、第12/982269号、第12/966573号、第12/967880号、第61/357429号、第12/974499号、第61/360421号、第12/910664号、第12/945492号、第12/966514号、第12/966535号、第13/047392号、第13/048635号、第13/106851号、第61/488535号、第13/288131号、第13/494661号以及第61/563,279号美国专利申请案相关，所述专利申请案的揭示内容全文以引用的方式并入本文中。
技术领域
本申请案涉及光伏装置，且更特定来说涉及多结光伏装置。
背景技术
光伏装置(也称为太阳能电池)是通过光伏效应将太阳光的能量直接转换为电力的固态装置。电池的组合件用于形成太阳能模块，也称为太阳能面板。从这些太阳能模块产生的能量(称为太阳能)是太阳能的实例。
光伏效应是在曝露于光后在材料中产生电压(或对应的电流)。尽管光伏效应与光电效应直接相关，但这两个过程是不同的且应予以区分。在光电效应中，电子在曝露于充分能量的辐射后从材料表面射出。光伏效应的不同之处在于，所产生的电子在材料内的不同能带之间转移(即，从价带到传导带)，从而导致电压在两个电极之间累积。
光伏法是用于通过使用太阳能电池将来自太阳的能量转换为电力而产生电功率的方法。光伏效应涉及太阳能的光脉冲群的光子将电子撞击到较高能量状态以产生电力。在较高能量状态下，电子能够从其与半导体中的单一原子相关联的正常位置逃逸以变为电路中的电流的一部分。这些光子含有对应于太阳光谱的不同波长的不同量的能量。当光子撞击PV电池时，其可被反射或吸收，或者其可一直通过。被吸收的光子可产生电力。术语光伏表示其中穿过装置的电流完全归因于光能的光电二极管的未偏置操作模式。实际上，所有光伏装置都是某一类型的光电二极管。
发明内容
本文揭示一种可操作以将光转换为电力的光伏装置，其包括衬底、基本上垂直于衬底的一个或一个以上结构，和安置在衬底上的反射层，以及共形安置在所述一个或一个以上结构上的一个或一个以上结。
附图说明
图1A是根据一实施例的光伏装置的示意横截面图。
图1B展示图1A的装置的细节。
图2A是根据一实施例制造图1A和1B的光伏装置的示范性工艺。
图2B展示图1A中的工艺中的一些步骤的细节。
图3展示光伏装置的替代条状结构。
图4展示光伏装置的替代网状结构。
具体实施方式
如本文使用的术语“光伏装置”表示可通过将例如太阳辐射等光转换为电力来产生电功率的装置。如本文使用的术语“单晶”意味着材料的晶格贯穿于整个结构中是连续且不中断的，其中基本上无晶界。导电材料可为具有基本上零带隙的材料。导电材料的电导率通常在103S/cm以上。半导体可为具有达约3eV的有限带隙的材料，且通常具有103到10-8S/cm的范围内的电导率。电绝缘材料可为具有大于约3eV的带隙的材料，且通常具有10-8S/cm以下的电导率。如本文使用的术语“基本上垂直于衬底的结构”意味着结构与衬底之间的角为85°到90°。如本文使用的术语“覆盖层”表示结构周围的物质层。如本文使用的术语“连续”表示不具有间隙、孔或中断。如本文使用的术语“耦合层”表示有效地将光引导到结构中的层。
如本文使用的族III-V化合物材料表示由族III元素和族V元素组成的化合物。族III元素可为B、Al、Ga、In、Tl、Sc、Y、稀上属元素以及锕系元素。族V元素可为V、Nb、Ta、Db、N、P、As、Sb和Bi。如本文使用的族II-VI化合物材料表示由族II元素和族VI元素组成的化合物。族II元素可为Be、Mg、Ca、Sr、Ba和Ra。族VI元素可为Cr、Mo、W、Sg、O、S、Se、Te和Po。四元材料是由四个元素组成的化合物。
本文描述可操作以将光转换为电力的光伏装置，其包括衬底、基本上垂直于衬底的一个或一个以上结构，和安置在衬底上的反射层，以及共形安置在所述一个或一个以上结构上的一个或一个以上结。所述光伏装置优选包括共形安置在所述一个或一个以上结构上的至少两个结。
在一实施例中，衬底是电绝缘材料。衬底可包括玻璃、聚合物、一个或一个以上适宜的电绝缘材料，或其组合。
在一实施例中，衬底是导电材料。衬底可包括一个或一个以上金属、一个或一个以上适宜的电绝缘材料、一个或一个以上其它适宜的导电材料，或其组合。
在一实施例中，衬底是柔性的。在一实施例中，衬底是透明的。
在一实施例中，衬底具有约5μm到约300μm的厚度，优选约200μm。
在一实施例中，基本上垂直于衬底的所述一个或一个以上结构是具有选自由椭圆形、圆形、矩形和多边形横截面、条形组成的群组的横截面的圆柱体或棱柱体。基本上垂直于衬底的所述一个或一个以上结构可为网状。如本文使用的术语“网状”表示类似于网的图案或构造。
在一实施例中，所述结构是具有约0.2μm到约10μm的直径的圆柱体，优选具有约1μm的直径。
在一实施例中，所述结构是具有约2μm到约50μm的高度的圆柱体或棱柱体，优选约10μm高度；约0.5μm到约20μm的两个最近结构之间的中心至中心距离优选约2μm。
在一实施例中，所述结构具有与衬底相同的组成。在一实施例中，所述结构为电绝缘材料，例如玻璃、聚合物、氧化物，或其组合。
在一实施例中，所述结构的顶部部分为圆形或锥形。所述结构可通过例如各向同性蚀刻等任何适宜的方法而变为圆形或锥形。所述圆形或锥形顶部部分可增强到结构的光耦合。
在一实施例中，第一结共形安置在所述结构上，且第二结共形安置在第一结上。第一和第二结可选自p-i-n结、p-n结和异质结。更多结(例如，表1中的第三结和第四结)可共形安置在第二结上。在一实施例中，这些结的每一者具有约5nm到约100nm的厚度，优选约20nm。
在一实施例中，导电层可安置在所述结构与第一结之间。在一实施例中，此导电层同第一导电层与所述结构之间的整个界面共同延伸。此导电层可具有约2nm到约100nm的厚度，优选约10nm。此导电层可为透明的、半透明或不透明的。
在一实施例中，透明导电层可安置在每一对相邻结之间。在一实施例中，透明导电层与一对相邻结之间的整个界面共同延伸。此透明导电层可具有约2nm到约100nm的厚度，优选约10nm。此透明导电层优选具有针对可见光至少90％的透射率。此透明导电层优选形成与所述对相邻结的欧姆接触。在一实施例中，此透明导电层包括例如ITO(氧化铟锡)、AZO(掺铝氧化锌)、ZIO(氧化锌铟)、ZTO(氧化锌锡)等任何适宜的材料。此透明导电层将所述对相邻结串联连接。所述透明导电层优选有效地防止相邻结之间的扩散。
在一实施例中，所述结的一者包括重度掺杂(p+)半导体材料层、轻度掺杂(n-)半导体材料层，和重度掺杂(n+)半导体材料层。p+层、n-层和n+层形成p-n结或异质结。p+层、n-层和n+层可为不同半导体材料或相同半导体材料。p+层、n-层和n+层可为单晶体、多晶体或非晶体。
在一实施例中，所述结的一者包括重度掺杂(p+)半导体材料层、轻度掺杂(p-)半导体材料层，和重度掺杂(n+)半导体材料层。p+层、p-层和n+层形成p-n结或异质结。p+层、p-层和n+层可为不同半导体材料或相同半导体材料。p+层、p-层和n+层可为单晶体、多晶体或非晶体。
在一实施例中，所述结的一者包括重度掺杂p型(p+)半导体材料层、本征(i)半导体层，和重度掺杂n型(n+)半导体材料层。p+层、i层和n+层形成p-i-n结。p+层、i层和n+层可为单晶体、多晶体(polycrystalline)(可互换称为“多晶体(multicrystalline)”)、微晶体(“μc”)(可互换称为“纳米晶体”或“nc”)或非晶体。在一实施例中，所述结包括选自由硅、锗、族III-V化合物材料、族II-VI化合物材料和四元材料组成的群组的一个或一个以上半导体材料。
纳米晶体半导体(也称为微晶体半导体)是多孔半导体的一种形式。其是具有次晶结构的半导体的同素异形形式，其类似于非晶半导体之处在于，其具有非晶相。纳米晶体半导体不同于非晶半导体之处在于，纳米晶体半导体具有在非晶相内的较小的晶粒。这与多晶半导体(例如，多晶硅)形成对比，多晶半导体仅由被晶界分离的晶粒组成。
在一实施例中，内部结(即，较接近所述结构的结)的带隙小于内部结(即，较远离所述结构的结)的带隙。
表1展示所述结的示范性材料和组合。
Figure BDA00003479929300041
Figure BDA00003479929300051
在一实施例中，覆盖层可共形安置在最外部结(即，那些共形安置在所述结构上的结当中的不在另一结与所述结构之间的结)上。透明导电层可安置在最外部结与覆盖层之间。
覆盖层对于可见光来说实质上可以至少50％的透射率透射。覆盖层可由导电材料或电绝缘材料制成。在一实施例中，覆盖层是透明导电氧化物。在一实施例中，覆盖层是选自由氧化铟锡、掺铝氧化锌、氧化锌铟和氧化锌锡组成的群组的材料。在一实施例中，覆盖层是选自由Si3N4、Al2O3和HfO2组成的群组的材料。在一实施例中，覆盖层具有约为2的折射率。在一实施例中，覆盖层具有低于覆盖层与所述结构之间的任何结的折射率的折射率。在一实施例中，覆盖层具有约10nm到约500nm的厚度，优选约200nm。在一实施例中，覆盖层经配置为光伏装置的电极。
在一实施例中，反射层安置在所述结构之间的多个凹口中，且反射层在所述结上方。反射层可为选自由ZnO、Ni、Pt、Al、Au、Ag、Pd、Cr、Cu、Ti和其组合组成的群组的材料。反射层优选为导电材料，例如金属。反射层优选具有针对任何波长的可见光(即，具有390到750nm的波长的光)至少50％的反射率(即，被反射的入射电磁功率的分数)。反射层具有至少5nm的厚度，优选约20nm到约500nm(例如，约200nm)。所述多个凹口中的反射层优选为连接的。反射层具有将入射在其上的光反射到所述结构使得所述光被所述结构吸收的功能；且/或反射层具有充当光伏装置的电极的功能。反射层优选为非平面的。如本文使用的术语“电极”表示用于建立与光伏装置的电接触的导体。
根据一实施例，金属层安置在所述结构之间的多个凹口中，且金属层在所述结与所述结构之间。金属层可为选自由Ni、Pt、Al、Au、Ag、Pd、Cr、Cu、Ti和其组合组成的群组的材料。金属层具有至少5nm的厚度，优选约20nm到约500nm(例如，约200nm)。所述多个凹口中的金属层优选为连接的。金属层优选为平面的。金属层具有充当光伏装置的电极的功能。
在一实施例中，所述结构之间的空间可用例如聚合物等填充材料填充。填充材料优选为透明的且/或具有低折射率。在一实施例中，填充材料的顶部表面包括经配置以将光伏装置上的入射光集中到所述结构上的一个或一个以上微透镜。
在一实施例中，一种制造光伏装置的方法包括：使用光刻技术在抗蚀剂层上产生开口图案，其中开口的位置和形状对应于所述结构的位置和形状；通过蚀刻衬底形成所述结构和其间的区；将反射层沉积到底壁。如本文使用的抗蚀剂层表示用于将图案转移到上面沉积抗蚀剂层的衬底的薄层。抗蚀剂层可经由光刻图案化以形成在后续处理步骤期间保护下伏衬底的选定区域的(亚)微米级临时掩模。抗蚀剂通常是聚合物或其前驱体与已针对给定光刻技术特别选配的其它小分子(例如，光生酸剂)的专有混合物。光学光刻期间使用的抗蚀剂称为光致抗蚀剂。电子束光刻期间使用的抗蚀剂称为电子束抗蚀剂。光刻技术可为光学光刻、电子束光刻、全息光刻。光学光刻是在微制造中使用以选择性移除衬底的薄膜或主体的部分的工艺。其使用光将几何图案从光掩模转移到衬底上的光敏化学光致抗蚀剂(或简称为“抗蚀剂”)。一系列化学处理接着将曝光图案雕刻到光致抗蚀剂下方的材料中。在复杂集成电路(例如，现代CMOS)中，晶片将经历光学光刻循环达50次。电子束光刻是在用膜(称为抗蚀剂)覆盖的表面上以图案化方式扫描电子束以及选择性移除抗蚀剂的曝露或未曝露区(“显影”)的实践。其目的与光学蚀刻一样，是在抗蚀剂中产生可随后例如通过蚀刻转移到衬底材料的极小的结构。其为制造集成电路而开发，且还用于产生纳米技术人工制品。
在一实施例中，通过深蚀刻以及随后的各向同性蚀刻形成所述结构和其间的区。深蚀刻是用于以通常20∶1或更大的纵横比在晶片中产生较深侧边陡峭的孔和沟槽的高度各向异性蚀刻工艺。示范性深蚀刻是波希工艺(Bosch process)。波希工艺(也称为脉冲控制或时间多路复用蚀刻)在两个模式之间反复交替以实现近似垂直的结构：1.标准近似各向同性等离子体蚀刻，其中等离子体含有一些离子，其从近似垂直方向冲击晶片(对于硅，这通常使用六氟化硫(SF6))；2.化学惰性钝化层的沉积(例如，C4F8源气体产生类似于特氟纶的物质)。每一阶段持续几秒。钝化层保护整个衬底使其免受进一步化学冲击且防止进一步蚀刻。然而，在蚀刻阶段期间，轰击衬底的定向离子在沟槽的底部处(但不沿着侧边)冲击钝化层。其与之碰撞并将之溅镀掉，从而将衬底曝露于化学蚀刻剂。这些蚀刻/沉积步骤反复多次从而导致大量极小各向同性蚀刻步骤仅在经蚀刻凹陷的底部处发生。为蚀刻穿过0.5mm硅晶片，需要100-1000个蚀刻/沉积步骤。所述两个阶段工艺致使侧壁以约100-500nm的振幅呈波浪形。循环时间可调整：短循环产生较平滑壁，且长循环产生较高蚀刻速率。各向同性蚀刻是使用蚀刻剂物质经由化学工艺从衬底非定向地移除材料。蚀刻剂可为腐蚀性液体或化学活性离子化气体(称为等离子体)。
在一实施例中，一种将光转换为电力的方法包括：使光伏装置曝露于光；从光伏装置汲取电流。所述电流可从波长选择性层汲取。
在一实施例中，光电检测器包括光伏装置，其中光电检测器经配置以当曝露于光时输出电信号。
在一实施例中，一种检测光的方法包括使光伏装置曝露于光；测量来自光伏装置的电信号。所述电信号可为电流、电压、电导和/或电阻。将偏压施加到光伏装置中的结构。
在一实施例中，光伏装置从太阳光中产生直流电力，所述直流电力可用于为设备供电或对电池再充电。光伏的实际应用曾是为轨道卫星和其它航天器供电，但如今大部分光伏模块用于连网发电。在此情况下，需要变流器将DC转换为AC。对于针对远程寓所、轮船、游乐车、电车、路边紧急电话、远程感测和管道的阴极保护的离网发电存在较小市场。在大多数光伏应用中，辐射为太阳光，且出于这个原因，所述装置称为太阳能电池。在p-n结太阳能电池的情况下，对材料的照明导致产生电流作为激发电子，且剩余空穴被耗尽区的内置电场扫向不同方向。太阳能电池通常电连接且囊封为模块。光伏模块通常在前(日出)侧上具有玻璃片，从而允许光通过且同时保护半导体晶片免受雨水、冰雹等因素影响。太阳能电池还通常串联连接在模块中，从而产生加性电压。将电池并联连接将产生较高电流。模块接着互相串联或并联(或二者)连接以产生具有所要峰值DC电压和电流的阵列。
在一实施例中，光伏装置还可与建筑物相关联：集成到建筑物中、安装在建筑物上或在地面上安装在建筑物附近。光伏装置可改装到现有建筑物中，通常安装在现有屋顶结构的顶部上或现有墙壁上。或者，光伏装置可与建筑物分离定位但通过缆线连接以为建筑物供电。光伏装置可用作主要或辅助电源。光伏装置可并入到建筑物的屋顶或墙壁中。
在一实施例中，光伏装置还可用于例如卫星、航天器、空间站等空间应用。光伏装置可用作陆上交通工具、海洋交通工具(轮船)和火车的主要或辅助电源。其它应用包含道路标志、监视摄像机、停车计时器、个人移动电子设备(例如，蜂窝式电话、智能电话、膝上型计算机、个人媒体播放器)。
实例
图1A展示根据一实施例的光伏装置200的示意横截面。图1B展示虚线圆中的装置200的细节。光伏装置200包括衬底205、基本上垂直于衬底205的一个或一个以上结构220。第一结230c共形安置在衬底205上。透明导电层280a共形安置在结构220与第一结230c之间。第二结230b共形安置在第一结230c上。透明导电层280b共形安置在第二结230b与第一结230c之间。第三结230a共形安置在第二结230b上。透明导电层280c共形安置在第三结230a与第二结230b之间。覆盖层290共形安置在第三结230a上，在此实例中第三结230a是最外部结。透明导电层280d共形安置在第三结230a与覆盖层290之间。反射层250安置在结构220之间的多个凹口中，且反射层250在结230a、230b和230c上方。反射层250具有将入射在其上的光反射到结构220的功能，且具有充当光伏装置200的电极的功能。金属层240安置在结构220之间的多个凹口中，且金属层240在第一结230c与结构220之间。金属层240具有充当光伏装置200的电极的功能。结构220之间的空间用填充材料260填充。填充材料260的顶部表面具有多个微透镜270。
结构220可具有任何横截面形状。举例来说，结构220可为具有椭圆形、圆形、矩形、多边形横截面的圆柱体或棱柱体。结构220还可为如图3所示的条形，或如图4所示的网状。
在一个实施例中，结构220是布置在例如矩形阵列、六边形阵列、正方形阵列、同心圆等阵列中的柱脚。
根据一实施例一种制造如图2A所示的光伏装置200的方法包括以下步骤：
在步骤2000中，提供衬底205。
在步骤2001中，将抗蚀剂层21涂覆到衬底205。抗蚀剂层21可通过旋涂涂覆。抗蚀剂层21E可为光致抗蚀剂或电子束抗蚀剂。
在步骤2002中，执行光刻。抗蚀剂层21现具有其中曝露衬底205的开口的图案。光刻的分辨率受所使用的辐射的波长限制。使用具有近似248和193nm的波长的深紫外(DUV)光的光学蚀刻工具允许低至约50nm的最小特征大小。使用1keV到50keV的电子能量的电子束光刻工具允许低至几纳米的最小特征大小。
在步骤2003中，在抗蚀剂层21的剩余部分和衬底205的曝露部分上沉积掩模层22。掩模层22可使用例如热蒸发、电子束蒸发、溅镀等任何适宜的方法沉积。掩模层22可为例如Cr或Al等金属，或例如SiO2或Si3N4等电介质。掩模层22的厚度可由结构220的高度和蚀刻选择性(即，掩模层22与衬底205的蚀刻速率的比率)决定。
在步骤2004中，通过适宜的溶剂提离抗蚀剂层21的剩余部分，或将其在抗蚀剂灰化器中灰化。
在步骤2005中，将衬底205的曝露部分深蚀刻到所要深度，以形成结构220。
在步骤2006中，通过例如利用适宜蚀刻剂的湿式蚀刻、离子研磨、溅镀等适宜的方法移除掩模层22。
在步骤2007中，使用例如干式蚀刻或湿式蚀刻等适宜的技术使结构220的顶部部分变为圆形或锥形。
在步骤2008中，将金属层240沉积在结构220之间。此步骤可使用图2B所示的示范性工艺实行。
在步骤2009中，将透明导电层280a共形(即，各向同性)沉积在结构220和金属层240上。透明导电层280a可通过例如镀敷、化学气相沉积或原子层沉积等适宜的技术沉积。
在步骤2010中，将结230c共形沉积在透明导电层280a上；且将透明导电层280b共形沉积在结230c上。
在步骤2011中，将结230b共形沉积在透明导电层280b上。
在步骤2012中，将透明导电层280c共形沉积在结230b上。
在步骤2013中，将结230a共形沉积在透明导电层280c上。
在步骤2014中，将透明导电层280d共形沉积在结230a上。
在步骤2015中，将反射层250沉积在结构220之间，在结230a、230b和230c上方。此步骤可使用图2B所示的示范性工艺实行。
在步骤2016中，将覆盖层290共形沉积在透明导电层280d和反射层250上。
在步骤2017中，将填充材料260沉积在结构220之间的空间中，且将微透镜270形成在填充材料260的顶部表面上。
图2B展示将材料2B10仅沉积在结构220之间但不沉积在结构220的顶部上的示范性工艺。
在步骤2B1中，将材料2B10各向异性沉积在结构220的顶部上以及结构220之间。
在步骤2B2中，沉积例如抗蚀剂等牺牲材料2B20使得结构220的顶部上的材料2B10曝露，且结构220之间的材料2B10不曝露。这可通过控制牺牲材料2B20的量或通过移除一些牺牲材料2B20来实现。
在步骤2B3中，通过例如溶解溶剂或蚀刻等任何适宜的方法移除结构220的顶部上的材料2B10。
在步骤2B4中，移除牺牲材料2B20。
一种将光转换为电力的方法包括：使光伏装置200曝露于光；吸收光并使用结构220将光转换为电力；从光伏装置200汲取电流。如图1A和1B所示，可从金属层240和反射层250汲取所述电流。
根据一实施例的一种光电检测器包括光伏装置200，其中所述光电检测器经配置以当曝露于光时输出电信号。
一种检测光的方法包括：使光伏装置200曝露于光；测量来自光伏装置200的电信号。所述电信号可为电流、电压、电导和/或电阻。可当测量电信号时将偏压施加到光伏装置200中的结构220。
虽然本文已揭示各个方面和实施例，但其它方面和实施例对于所属领域的技术人员将是显而易见的。本文揭示的各个方面和实施例是出于说明的目的，且不希望限制由所附权利要求书指示的真实范围和精神。

Claims (29)

1.一种可操作以将光转化为电力的光伏装置，其包括衬底、基本上垂直于所述衬底的一个或一个以上结构，和安置在所述衬底上的反射层，以及共形安置在所述一个或一个以上结构上的一个或一个以上结。
2.根据权利要求1所述的光伏装置，其中所述光伏装置包括共形安置在所述一个或一个以上结构上的至少两个结。
3.根据权利要求1所述的光伏装置，其中反射层是非平面的。
4.根据权利要求2所述的光伏装置，其中所述两个或两个以上结串联电连接。
5.根据权利要求1所述的光伏装置，其中所述衬底是电绝缘材料。
6.根据权利要求1所述的光伏装置，其中所述衬底包括玻璃、聚合物或其组合。
7.根据权利要求1所述的光伏装置，其中所述衬底是柔性的。
8.根据权利要求1所述的光伏装置，其中所述衬底是透明的。
9.根据权利要求1所述的光伏装置，其中所述一个或一个以上结构具有与所述衬底相同的组成。
10.根据权利要求1所述的光伏装置，其中所述结构是具有选自由椭圆形、圆形、矩形和多边形横截面、条形或网状组成的群组的横截面的圆柱体或棱柱体。
11.根据权利要求1所述的光伏装置，其中所述结构是具有约0.2μm到约10μm的直径、约2μm到约50μm的高度、两个最近柱脚之间约0.5μm到约20μm的中心至中心距离的圆柱体。
12.根据权利要求1所述的光伏装置，其中所述结构的顶部部分为圆形或锥形。
13.根据权利要求1所述的光伏装置，其中所述一个或一个以上结选自由p-i-n结、p-n结和异质结组成的群组。
14.根据权利要求1所述的光伏装置，其中所述一个或一个以上结包括重度掺杂p型半导体材料层和重度掺杂n型半导体材料层，以及任选地夹在所述重度掺杂p型半导体材料层与所述重度掺杂n型半导体材料层之间的本征半导体层。
15.根据权利要求1所述的光伏装置，其中所述一个或一个以上结包括微晶半导体材料。
16.根据权利要求1所述的光伏装置，其中所述一个或一个以上结包括选自由硅、锗、族III-V化合物材料、族II-VI化合物材料和四元材料组成的群组的半导体材料。
17.根据权利要求2所述的光伏装置，其中所述两个或两个以上结中的第一结具有比所述两个或两个以上结中的第二结小的带隙，其中所述第一结比所述第二结更接近所述结构。
18.根据权利要求2所述的光伏装置，其进一步包括安置在所述结构与所述两个或两个以上结中的一者之间的至少一个导电层，和/或安置在所述两个或两个以上结的一对相邻结之间的层。
19.根据权利要求1所述的光伏装置，其进一步包括覆盖层。
20.根据权利要求19所述的光伏装置，其中所述覆盖层对于可见光来说实质上以至少50％的透射率透明；所述覆盖层由导电材料制成；所述覆盖层是透明导电氧化物；所述覆盖层是选自由氧化铟锡、掺铝氧化锌、氧化锌铟、Si3N4、Al2O3和HfO2以及氧化锌锡组成的群组的材料；所述覆盖层具有10nm到500nm的厚度；且/或所述覆盖层被配置为所述光伏装置的电极。
21.根据权利要求1所述的光伏装置，其中所述反射层是导电材料；所述反射层具有针对可见至少50％的反射率；所述反射层具有约20nm到约500nm的厚度；且/或所述反射层是所述光伏装置的电极。
22.一种制造根据权利要求1所述的光伏装置的方法，其包括：
使用光刻技术在抗蚀剂层中产生开口图案，其中所述开口的位置和形状对应于所述结构的位置和形状；
通过蚀刻所述衬底形成所述结构；
将所述反射层沉积到所述衬底。
23.根据权利要求22所述的方法，其进一步包括使所述结构的顶部部分变为锥形或圆形。
24.根据权利要求22所述的方法，其中通过深蚀刻形成所述结构。
25.一种将光转化为电力的方法，其包括：
使光伏装置曝露于光，其中所述光伏装置包括衬底、基本上垂直于所述衬底的一个或一个以上结构，和安置在所述衬底上的反射层，以及共形安置在所述一个或一个以上结构上的两个或两个以上结；
从所述光伏装置汲取电流。
26.一种光电检测器，其包括根据权利要求1所述的光伏装置，其中所述光电检测器经配置以当曝露于光时输出电信号。
27.一种检测光的方法，其包括：
使根据权利要求1所述的光伏装置曝露于光；
测量来自所述光伏装置的电信号。
28.根据权利要求27所述的方法，其中所述电信号为电流、电压、电导和/或电阻。
29.根据权利要求27所述的方法，其中将偏压施加到所述光伏装置中的所述结构。
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