CN103531626A - Adjustable constant-current tube based on two-dimensional electron gas - Google Patents
Adjustable constant-current tube based on two-dimensional electron gas Download PDFInfo
- Publication number
- CN103531626A CN103531626A CN201310528341.1A CN201310528341A CN103531626A CN 103531626 A CN103531626 A CN 103531626A CN 201310528341 A CN201310528341 A CN 201310528341A CN 103531626 A CN103531626 A CN 103531626A
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- Prior art keywords
- layer
- electron gas
- metal layer
- dimensional electron
- adjustable constant
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- 230000005533 two-dimensional electron gas Effects 0.000 title claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 239000002800 charge carrier Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
Abstract
The invention relates to an adjustable constant-current tube based on two-dimensional electron gas. The adjustable constant-current tube comprises a substrate and is characterized in that a GaN layer is arranged on the upper surface of the substrate, AlGaN layer is arranged on the upper surface of the GaN layer, and the two-dimensional electron gas is formed between the GaN layer and the AlGaN layer; a drain metal layer, a gate metal layer and a source metal layer are arranged on the upper surface of the AlGaN layer respectively; the drain metal layer, the source metal layer and the AlGaN layer are in ohmic contact; and the gate metal layer and the AlGaN layer are in non-ohmic contact; the drain metal layer and the source metal layer adopt a Ti/Al or Ti/Al/Ti/Au or Ti/Al/Ni/Au metal layer; and the gate metal layer is metal Pt. With the adoption of the adjustable constant-current tube based on the two-dimensional electron gas, bias voltage of a changed gate can be achieved, and the current of the electron gas can be adjustably changed.
Description
Technical field
The present invention relates to a kind of adjustable constant flow pipe, especially a kind of adjustable constant flow pipe based on two-dimensional electron gas.
Background technology
In existing constant current tube, manufacture principle all based on diode and field effect transistor, every kind of model constant current tube belongs to constant current value to be determined, uses comparatively fixing.Two-dimensional electron gas exists can be freely at moving in two dimensional directions, and the phenomenon being restricted in the third dimension.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of adjustable constant flow pipe based on two-dimensional electron gas is provided, realize the bias voltage that changes grid, reach the object that regulates electron gas size of current.
According to technical scheme provided by the invention, the described adjustable constant flow pipe based on two-dimensional electron gas, comprises substrate, it is characterized in that: in described substrate top surface, GaN layer is set, at GaN layer upper surface, AlGaN layer is set, between GaN layer and AlGaN layer, forms two-dimensional electron gas; At described AlGaN layer upper surface, drain metal layer, gate metal layer and source metal are set respectively.
Between described drain metal layer, source metal and AlGaN layer, form ohmic contact; It between described gate metal layer and AlGaN layer, is non-ohmic contact.
Described drain metal layer and source metal are Ti/Al or Ti/Al/Ti/Au or Ti/Al/Ni/Au metal level.
Described gate metal layer is Pt metal.
Described substrate is Sapphire Substrate.
The present invention, by add different bias voltages in gate metal layer, makes the electric field action of this bias voltage formation in the third dimension direction of two-dimensional electron gas, and in restriction two-dimensional electron gas, the channel depth of two-dimensional directional, changes electron gas charge carrier; Thereby realize the bias voltage that changes grid, reach the adjustable object that changes electron gas size of current.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Below in conjunction with concrete accompanying drawing, the invention will be further described.
As shown in Figure 1: the described adjustable constant flow pipe based on two-dimensional electron gas comprises substrate 1, GaN layer 2, two-dimensional electron gas 3, AlGaN layer 4, drain metal layer 5, gate metal layer 6, source metal 7 etc.
As shown in Figure 1, the present invention includes substrate 1, at substrate 1 upper surface, GaN layer 2 is set, at GaN layer 2 upper surface, AlGaN layer 4 is set, between GaN layer 2 and AlGaN layer 4, form two-dimensional electron gas 3; At described AlGaN layer 4 upper surface, drain metal layer 5, gate metal layer 6 and source metal 7 are set respectively; Between described drain metal layer 5, source metal 7 and AlGaN layer 4, form ohmic contact; It between described gate metal layer 6 and AlGaN layer 4, is non-ohmic contact;
Described drain metal layer 5 and source metal 7 are Ti/Al or Ti/Al/Ti/Au or Ti/Al/Ni/Au metal level;
Described gate metal layer 6 is Pt metal;
Described substrate 1 is Sapphire Substrate.
The manufacturing process of the adjustable constant flow pipe based on two-dimensional electron gas of the present invention is as follows: (1) forms GaN layer 2 in Sapphire Substrate 1; (2) the AlGaN layer 4 of growing on GaN layer 2; (3) evaporation Ti/Al or Ti/Al/Ti/Au or Ti/Al/Ni/Au on AlGaN layer 4, form drain metal layer 5 and source metal 7; (4) on AlGaN layer 4, on evaporation, Pt metal forms gate metal layer 6.
The present invention is by 6 adding different bias voltages in gate metal layer, makes electric field action that this bias voltage forms in the third dimension direction of two-dimensional electron gas 3, and in restriction two-dimensional electron gas 3, the channel depth of two-dimensional directional, changes electron gas charge carrier; Thereby reach the bias voltage that changes grid, change the adjustable object of electron gas size of current.
Claims (5)
1. the adjustable constant flow pipe based on two-dimensional electron gas, comprise substrate (1), it is characterized in that: at described substrate (1) upper surface, GaN layer (2) is set, at GaN layer (2) upper surface, AlGaN layer (4) is set, between GaN layer (2) and AlGaN layer (4), forms two-dimensional electron gas (3); At described AlGaN layer (4) upper surface, drain metal layer (5), gate metal layer (6) and source metal (7) are set respectively.
2. the adjustable constant flow pipe based on two-dimensional electron gas as claimed in claim 1, is characterized in that: between described drain metal layer (5), source metal (7) and AlGaN layer (4), form ohmic contact; It between described gate metal layer (6) and AlGaN layer (4), is non-ohmic contact.
3. the adjustable constant flow pipe based on two-dimensional electron gas as claimed in claim 1, is characterized in that: described drain metal layer (5) and source metal (7) are Ti/Al or Ti/Al/Ti/Au or Ti/Al/Ni/Au metal level.
4. the adjustable constant flow pipe based on two-dimensional electron gas as claimed in claim 1, is characterized in that: described gate metal layer (6) is Pt metal.
5. the adjustable constant flow pipe based on two-dimensional electron gas as claimed in claim 1, is characterized in that: described substrate (1) is Sapphire Substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310528341.1A CN103531626A (en) | 2013-10-30 | 2013-10-30 | Adjustable constant-current tube based on two-dimensional electron gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310528341.1A CN103531626A (en) | 2013-10-30 | 2013-10-30 | Adjustable constant-current tube based on two-dimensional electron gas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103531626A true CN103531626A (en) | 2014-01-22 |
Family
ID=49933489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310528341.1A Pending CN103531626A (en) | 2013-10-30 | 2013-10-30 | Adjustable constant-current tube based on two-dimensional electron gas |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103531626A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003229439A (en) * | 2001-11-30 | 2003-08-15 | Shin Etsu Handotai Co Ltd | Compound semiconductor device |
| US20060138456A1 (en) * | 2001-07-24 | 2006-06-29 | Cree, Inc. | Insulating gate AlGaN/GaN HEMT |
| CN1947264A (en) * | 2004-02-12 | 2007-04-11 | 国际整流器公司 | III-nitride bidirectional switch |
| CN203521425U (en) * | 2013-10-30 | 2014-04-02 | 江苏新广联绿色照明工程有限公司 | Adjustable constant current tube based on two-dimensional electron gas |
-
2013
- 2013-10-30 CN CN201310528341.1A patent/CN103531626A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060138456A1 (en) * | 2001-07-24 | 2006-06-29 | Cree, Inc. | Insulating gate AlGaN/GaN HEMT |
| JP2003229439A (en) * | 2001-11-30 | 2003-08-15 | Shin Etsu Handotai Co Ltd | Compound semiconductor device |
| CN1947264A (en) * | 2004-02-12 | 2007-04-11 | 国际整流器公司 | III-nitride bidirectional switch |
| CN203521425U (en) * | 2013-10-30 | 2014-04-02 | 江苏新广联绿色照明工程有限公司 | Adjustable constant current tube based on two-dimensional electron gas |
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| C06 | Publication | ||
| PB01 | Publication | ||
| ASS | Succession or assignment of patent right |
Owner name: JIANGSU XINGUANGLIAN GREEN LIGHTING ENGINEERING CO Free format text: FORMER OWNER: JIANGSU XINGUANGLIAN TECHNOLOGY CO., LTD. Effective date: 20140113 |
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| C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: 214192 WUXI, JIANGSU PROVINCE TO: 214111 WUXI, JIANGSU PROVINCE |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20140113 Address after: 214111, No. 18, unity North Road, Xishan Economic Development Zone, Xishan District, Jiangsu, Wuxi Applicant after: JIANGSU XINGUANGLIAN GREEN LIGHTING ENGINEERING CO., LTD. Address before: 214192 Wuxi, Xishan, Xishan Economic Development Zone, North Road, unity, No. 18, No. Applicant before: Jiangsu Xinguanglian Technology Co., Ltd. |
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| C10 | Entry into substantive examination | ||
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| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: 214192 Wuxi, Xishan, Xishan Economic Development Zone, North Road, unity, No. 18, No. Applicant after: JIANGSU XGL OPTOELECTRONICS CO., LTD. Address before: 214111, No. 18, unity North Road, Xishan Economic Development Zone, Xishan District, Jiangsu, Wuxi Applicant before: JIANGSU XINGUANGLIAN GREEN LIGHTING ENGINEERING CO., LTD. |
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| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: JIANGSU XINGUANGLIAN GREEN LIGHTING ENGINEERING CO., LTD. TO: JIANGSU XINGUANGLIAN OPTOELECTRONIC CO., LTD. |
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| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140122 |