CN103531626A - Adjustable constant-current tube based on two-dimensional electron gas - Google Patents
Adjustable constant-current tube based on two-dimensional electron gas Download PDFInfo
- Publication number
- CN103531626A CN103531626A CN201310528341.1A CN201310528341A CN103531626A CN 103531626 A CN103531626 A CN 103531626A CN 201310528341 A CN201310528341 A CN 201310528341A CN 103531626 A CN103531626 A CN 103531626A
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- China
- Prior art keywords
- layer
- electron gas
- metal layer
- dimensional electron
- adjustable constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 230000005533 two-dimensional electron gas Effects 0.000 title claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 239000002800 charge carrier Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310528341.1A CN103531626A (en) | 2013-10-30 | 2013-10-30 | Adjustable constant-current tube based on two-dimensional electron gas |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310528341.1A CN103531626A (en) | 2013-10-30 | 2013-10-30 | Adjustable constant-current tube based on two-dimensional electron gas |
Publications (1)
Publication Number | Publication Date |
---|---|
CN103531626A true CN103531626A (en) | 2014-01-22 |
Family
ID=49933489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310528341.1A Pending CN103531626A (en) | 2013-10-30 | 2013-10-30 | Adjustable constant-current tube based on two-dimensional electron gas |
Country Status (1)
Country | Link |
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CN (1) | CN103531626A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003229439A (en) * | 2001-11-30 | 2003-08-15 | Shin Etsu Handotai Co Ltd | Compound semiconductor device |
US20060138456A1 (en) * | 2001-07-24 | 2006-06-29 | Cree, Inc. | Insulating gate AlGaN/GaN HEMT |
CN1947264A (en) * | 2004-02-12 | 2007-04-11 | 国际整流器公司 | III-nitride bidirectional switch |
CN203521425U (en) * | 2013-10-30 | 2014-04-02 | 江苏新广联绿色照明工程有限公司 | Adjustable constant current tube based on two-dimensional electron gas |
-
2013
- 2013-10-30 CN CN201310528341.1A patent/CN103531626A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060138456A1 (en) * | 2001-07-24 | 2006-06-29 | Cree, Inc. | Insulating gate AlGaN/GaN HEMT |
JP2003229439A (en) * | 2001-11-30 | 2003-08-15 | Shin Etsu Handotai Co Ltd | Compound semiconductor device |
CN1947264A (en) * | 2004-02-12 | 2007-04-11 | 国际整流器公司 | III-nitride bidirectional switch |
CN203521425U (en) * | 2013-10-30 | 2014-04-02 | 江苏新广联绿色照明工程有限公司 | Adjustable constant current tube based on two-dimensional electron gas |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: JIANGSU XINGUANGLIAN GREEN LIGHTING ENGINEERING CO Free format text: FORMER OWNER: JIANGSU XINGUANGLIAN TECHNOLOGY CO., LTD. Effective date: 20140113 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 214192 WUXI, JIANGSU PROVINCE TO: 214111 WUXI, JIANGSU PROVINCE |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20140113 Address after: 214111, No. 18, unity North Road, Xishan Economic Development Zone, Xishan District, Jiangsu, Wuxi Applicant after: JIANGSU XINGUANGLIAN GREEN LIGHTING ENGINEERING CO., LTD. Address before: 214192 Wuxi, Xishan, Xishan Economic Development Zone, North Road, unity, No. 18, No. Applicant before: Jiangsu Xinguanglian Technology Co., Ltd. |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: 214192 Wuxi, Xishan, Xishan Economic Development Zone, North Road, unity, No. 18, No. Applicant after: JIANGSU XGL OPTOELECTRONICS CO., LTD. Address before: 214111, No. 18, unity North Road, Xishan Economic Development Zone, Xishan District, Jiangsu, Wuxi Applicant before: JIANGSU XINGUANGLIAN GREEN LIGHTING ENGINEERING CO., LTD. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: JIANGSU XINGUANGLIAN GREEN LIGHTING ENGINEERING CO., LTD. TO: JIANGSU XINGUANGLIAN OPTOELECTRONIC CO., LTD. |
|
C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140122 |