CN103515406A - Integrated type dual-band CMOS digital image sensor - Google Patents
Integrated type dual-band CMOS digital image sensor Download PDFInfo
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- CN103515406A CN103515406A CN201310441645.4A CN201310441645A CN103515406A CN 103515406 A CN103515406 A CN 103515406A CN 201310441645 A CN201310441645 A CN 201310441645A CN 103515406 A CN103515406 A CN 103515406A
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Abstract
The invention discloses an integrated type dual-band CMOS digital image sensor which comprises an integrated structure mainly formed by a silicon substrate visible light sensor array and a Terahertz heat sensor array in an integrated mode longitudinally in the direction perpendicular to the surface of the sensor. The integrated structure comprises a silicon substrate, an isolation layer, a metal bottom layer, a medium layer, a metal top layer and a heat-sensitive material layer which are arranged in sequence in a setting direction. At least part of the zone of the metal bottom layer is provided with a cyclic nanostructure which can be at least used as a visible light color filter and a Terahertz wave reflecting layer. At least part of the zone of the metal top layer is provided with a cyclic micron structure which can be at least used as a Terahertz wave surface impedance matching layer. The reflecting layer, the surface impedance matching layer and the medium layer are matched to form a Terahertz metamaterial structure which has nearly-complete absorptive characters. The integrated type dual-band CMOS digital image sensor has a visible light imaging function and a Terahertz imaging function at the same time, and the integrated structure has the advantages of being small in size, low in cost, high in efficiency and the like.
Description
Technical field
The present invention relates to a kind of imageing sensor, be specifically related to a kind ofly can, at the integrated-type cmos digital imageing sensor of visible ray and terahertz wave band imaging simultaneously, belong to digital image sensor technical field.
Background technology
Along with the growing demand to digitized video of society, digital imaging technology is developed so far the impetus that is always keeping swift and violent from the seventies.Except consumption electronic products such as digital cameras, it has been widely used in the aspects such as real-time monitoring, video conference, robot vision, biological medicine analysis, food material quality monitoring and Aero-Space.Have benefited from fast development and the maturation process of silicon base CMOS, large array visible light sensor has been obtained huge progress, and for example Nikon D800 camera chip ultimate resolution used has reached 7360 * 4912.Calendar year 2001, the research group of Stanford Univ USA proposed to utilize phasmon effect can in cmos digital imageing sensor, utilize metal Nano structure to substitute the dyestuff colour filter based on polymer, be expected to further improve resolution, and improve device stability and reduce costs.Recently, terahertz imaging becomes study hotspot, due to its good penetrability and low biological damage, at aspects such as safety checks, has great application potential.Within 2008, Belgian research group has shown the terahertz filter based on metal micrometer structure.2012 Nian， U.S. scientific research groups have shown the THz wave transducer based on micro-electromechanical technology and metamaterial structure.On the other hand, except common single band imaging, biobelt imaging is spectra re-recorded and spatial information simultaneously, needn't use beam separation or optical dispersion system, if ultraviolet infrared imaging sensor is Primary Component in fields such as military affairs detection and guidances.Current biobelt imaging sensor concentrates on infrared band, and needs complicated heterogeneous epitaxial technology or bonding techniques.Because the homogeneity question of compound semiconductor materials extension is difficult to obtain the sensor cover battle array of large array.Current, the integrated-type biobelt imaging sensor simultaneously with visible light wave range imaging and terahertz imaging ability is still blank.
Summary of the invention
For the deficiencies in the prior art, main purpose of the present invention is to provide a kind of integrated-type biobelt cmos digital imageing sensor.
For realizing aforementioned goal of the invention, the present invention has adopted following technical scheme:
A kind of integrated-type biobelt cmos digital imageing sensor, comprise the integrated morphology mainly being formed at the direction Top-down design perpendicular to described sensor surface by silica-based visible light sensor array and Terahertz heat sensor array, described integrated morphology comprises silicon substrate, separator, metal back layer, dielectric layer, metal top layer and the heat-sensitive material layer setting gradually along direction initialization;
Wherein, the regional area of at least described metal back layer has the periodic nano-structure that at least can be used as the chromatic filter of visible ray and the reflector of THz wave,
Meanwhile, the regional area of at least described metal top layer has the periodicity micrometer structure of the surface impedance matching layer that at least can be used as THz wave;
And described reflector, surface impedance matching layer coordinate formation to have the nearly Terahertz metamaterial structure of absorption characteristic completely with dielectric layer.
Further, the impedance Z of described metamaterial structure equals or for example, close to (, deviation amplitude can be controlled in ± 10% in) vacuum impedance 376.7 Ω, wherein,
, ε and μ are respectively dielectric constant and the magnetic permeability of described metamaterial structure, the reflection of THz wave at interface are equaled or close to zero.
Further, described metal back layer has periodic nano-structure, and the cycle is less than 600 nanometers, and thickness is greater than 50 nanometers.
Further, described metal top layer has periodically micrometer structure, and the cycle is greater than 10 microns, and thickness should be enough to stop completely light to see through, more than being especially preferably 50 nanometers.
Further, in the periodicity micrometer structure of described metal top layer, also can distribute and there is the nanostructure of visible ray filtering.
Further, described heat-sensitive material layer has the high thermal resistivity to THz wave, as vanadium oxide, polysilicon and platinum etc.
Described metal back layer and/or metal top layer can adopt the overlaying structure of the single metal level, alloy-layer, multiple single metal level or the alloy-layer that are formed by gold, silver, copper, aluminium, platinum, titanium etc., or the overlaying structure of single metal level and alloy-layer, and be not limited to this.
The thickness of described metal back layer and/or metal top layer is preferably 50-300 nanometers.
The dielectric material that described dielectric layer is mainly absorbed by low visible light forms.
Compared with prior art, advantage of the present invention is at least:
(1), by thermo-sensitive material being integrated in the metamaterial structure with nearly absorption characteristic completely, thereby improve, the absorption of THz wave and corresponding thermal resistance are changed the i.e. sensitivity of Terahertz heat sensor;
(2) by metal Nano structure, realize the filter function of visible ray, than polymeric dye colour filter, there is anti-irradiation, the advantage such as integrated level is high, technique is simple and designability is good;
(3) due to the greatest differences of visible wavelength and Terahertz wavelength, preferably, metal Nano structure as visible light filter can also be integrated in the micrometer structure of the super material of THz wave, and do not affect the function of the super material of Terahertz, and visible light sensor and Terahertz transducer are all based on silicon materials, therefore can, by visible light sensor and THz wave transducer Top-down design, realize biobelt imaging simultaneously.Have benefited from the maturity of silicon CMOS technique, can obtain the transducer that large array can biobelt digital imagery.
Accompanying drawing explanation
Below in conjunction with the accompanying drawing content of the present invention of further explaining.But, the following drawings is only the schematic diagram of idealized embodiment of the present invention, wherein for clear structure of showing device involved in the present invention, thickness to wherein selected Ceng He region has carried out suitable amplification, but it should not be considered to strictly reflect the proportionate relationship of physical dimension as schematic diagram.In addition, embodiment shown in the present also should not be considered to only limit to the given shape in the region shown in figure.In general, following accompanying drawing is schematically, should not be considered to limit the scope of the invention.
Fig. 1 is the longitudinal profile schematic diagram of integrated-type biobelt cmos digital imageing sensor in the optional embodiment of the present invention one;
Fig. 2 a-Fig. 2 c is respectively in the optional embodiment of the present invention one schematic top plan view of metal back layer in integrated-type biobelt cmos digital imageing sensor, wherein, Fig. 2 a is the metal back layer with One Dimension Periodic nanostructure, and Fig. 2 b-Fig. 2 c is respectively the metal back layer with two-dimension periodic nanostructure;
Fig. 3 a-Fig. 3 c is respectively in the optional embodiment of the present invention one schematic top plan view of metal top layer in integrated-type biobelt cmos digital imageing sensor, wherein, Fig. 3 a is the metal top layer with One Dimension Periodic micrometer structure, Fig. 3 b is the metal back layer with two-dimension periodic micrometer structure, Fig. 3 c is the metal back layer with two-dimension periodic micrometer structure, and micrometer structure comprises cycle nanostructure;
Fig. 4 is the nanostructure optical transmission spectra of corresponding green glow filter in metal back layer in integrated-type biobelt cmos digital imageing sensor in the optional embodiment of the present invention one;
Fig. 5 is the absorptivity spectrum of Terahertz metamaterial structure in integrated-type biobelt cmos digital imageing sensor in the optional embodiment of the present invention one;
Fig. 6 is the vertical view of pel array in integrated-type biobelt cmos digital imageing sensor in the optional embodiment of the present invention one.
Embodiment
The present invention aims to provide a kind of integrated-type biobelt cmos digital imageing sensor, and it is mainly comprised of silica-based visible light sensor array and Terahertz heat sensor array, and both are at the direction Top-down design perpendicular to the plane of incidence.
Further, this integrated-type biobelt cmos digital imageing sensor at least comprises silicon substrate, separator, metal back layer, dielectric layer, metal top layer and the heat-sensitive material layer distributing successively in a certain direction;
Wherein, metal back layer regional area has periodic nano-structure, on the one hand as the chromatic filter of visible ray, on the other hand as the reflector of THz wave; Metal top layer regional area has periodically micrometer structure, and as the surface impedance matching layer of THz wave, and reflector, surface impedance matching layer, and dielectric layer between the two coordinates to form and has the nearly Terahertz metamaterial structure of absorption characteristic completely.
Aforementioned metal bottom, dielectric layer, metal top layer form together and have the nearly Terahertz metamaterial structure absorbing completely.Further, by regulating and controlling refractive index and the thickness of aforementioned dielectric layer, the periodic structure of metal top layer micrometer structure and thickness, can optimal design be operated in the nearly metamaterial structure absorbing completely of different-waveband.For example, as one of application scheme preferably, can by Numerical Aanlysis Methods of Electromagnetic Field, optimize DIELECTRIC CONSTANT ε and the magnetic permeability μ of metamaterial structure, make the impedance of metamaterial structure
equal or close to 376.7 Ω, thereby obtain surperficial impedance matching, inhibitory reflex loss, in conjunction with the reflection effect of metal back layer, obtains nearly 100% complete light restriction.
The cycle of aforementioned metal top layer micrometer structure should be less than the operation wavelength of Terahertz heat sensor, thereby guarantee its metamaterial structure characteristic, but for the form of the periodic unit of aforementioned metal top layer micrometer structure, do not have restriction, it can be determined according to the needs of practical application.
The cycle of aforementioned metal bottom nanostructure should be less than 600 nanometers, thereby guarantee its visible light wave range filtering characteristic, but for the form of the periodic unit of aforementioned metal bottom nanostructure, also there is not restriction in it, and can determine according to the needs of practical application.
Aforementioned metal bottom and metal top layer material can be selected but be not limited to the overlaying structure of single metal level, alloy-layer or multiple single metal level or the alloy-layers such as gold, silver, copper, aluminium, platinum, titanium, preferably adopt copper and aluminium with CMOS process compatible, its thickness preferably more than 50 nanometers, 50 nanometer-300 nanometers especially.
The material of aforesaid dielectric layer is the dielectric material that low visible light absorbs, such as, can select but be not limited to silicon dioxide, silicon nitride, alundum (Al2O3), polymer etc., preferably adopt silicon dioxide and silicon nitride with CMOS process compatible.
Aforesaid heat-sensitive material layer adopts the material with Terahertz wave height thermal resistivity, can select but be not limited to vanadium oxide, polysilicon and platinum etc., preferably adopts vanadium oxide.
Aforementioned metal bottom has periodic nano-structure, by regulating and controlling its cycle and cellular construction, can form the filter of visible ray different-waveband.
Aforementioned metal top layer has periodically micrometer structure, by regulating and controlling its cycle and cellular construction, can form the surface impedance matching layer of THz wave different-waveband.
In other words, the filter function of visible ray is realized by the periodic nano-structure of aforementioned metal bottom, the super material that the frequency-selecting function of THz wave is comprised of metal back layer, dielectric layer and metal top layer is realized, and the photo-thermal electricity conversion of the opto-electronic conversion of visible light sensor and Terahertz heat sensor is all read and imaging by silicon base CMOS circuit.
Aforementioned metal top layer micrometer structure can also comprise the nanostructure that can realize visible ray filtering, to increase the transmitance of metal top layer to visible ray.
This integrated-type biobelt cmos digital imageing sensor is under radiation of visible light, visible ray is penetrating metal top layer, dielectric layer and metal back layer respectively, the photodiode arriving on silicon substrate is realized photosignal conversion, and the wavelength photoreceptor of each pixel of visible light sensor is determined by the metal Nano structure designing.
This integrated-type biobelt cmos digital imageing sensor is under THz wave is irradiated, THz wave is long-range is greater than the aforementioned metal nanostructure cycle, therefore no matter be that metal top layer or the nanostructure of metal back layer do not affect the function of super material, THz wave by local at dielectric layer, the wavelength photoreceptor of each pixel of Terahertz heat sensor is determined by the super material designing, and by heat-sensitive material layer, is realized the conversion of photo-thermal electricity.
Because visible ray and THz wave can being detected respectively without phase mutual interference, and visible ray sensing array and the hot sensor array of Terahertz can Top-down designs, therefore integrated-type biobelt cmos digital imageing sensor of the present invention can be realized the imaging of visible ray and THz wave simultaneously, and by the technique with silicon base CMOS maturation, can obtain the biobelt transducer of large array.
Below in conjunction with some preferred embodiments and relevant drawings, technical scheme of the present invention is elaborated:
Consulting shown in Fig. 1 is the Graphene transistor photo-detector longitudinal sectional drawing of the present embodiment based on metamaterial structure, it comprises silicon substrate 11, separator 22, metal back layer 33, dielectric layer 44, metal top layer 55 and heat-sensitive material layer 66, in figure, shown in arrow 77, is incident light.In this embodiment, metal back layer 33 has cycle nanostructure, realizes pseudo-colour filtering and the Terahertz wave reflection of visible ray simultaneously.As shown in Figure 2, the nanostructure of metal back layer 33 can be that (Fig. 2 a) or the periodic structure (Fig. 2 b and 2c) of two dimension, can obtain the specific band of visible ray is realized and seen through and its all band is realized to reflection through optimal design for the periodic structure of one dimension.For example, the nanometer array of circular apertures of the triangular lattice in 150 nanometer thickness aluminium films, is 330 nanometers when the cycle, when Circularhole diameter is 180 nanometer, can realize the filtering to green glow, and optical transmission spectra is shown in Fig. 4.In this embodiment, metal top layer 55 has cycle micrometer structure, as THz wave impedance matching box, reduce THz wave at the reflection loss at interface, and binding medium layer and the metal back layer with strong reflection effect, form together Terahertz metamaterial structure, form the hypersorption to incident THz wave nearly 100%.As shown in Figure 3, the micrometer structure of metal top layer 55 can be that (Fig. 3 a) or the periodic structure (Fig. 3 b) of two dimension or comprise the cycle micrometer structure (3c) of cycle nanostructure, can obtain the specific band of THz wave is realized and absorbed and its all band is realized to reflection through optimal design for the periodic structure of one dimension.For example, when metal back layer 33 is gold of thickness 200 nanometers, dielectric layer 44 is polyimides of 4 micron thick, metal top layer 55 is 220 nanometer thick gold membranes, and prepares as the tetragonal micrometer structure of Fig. 3 b at metal top layer 55, when the cycle, is 28 microns, 19 microns of the outer length of sides of square loop, during 0.5 micron of ring width, can realize the strong absorption to 2.9THz ripple, absorptivity spectrum is shown in Fig. 5.Can see the metal filled rate less than 5% in metal top layer 55 in this example, very little on the transmission impact of visible ray.If metal top layer 55 adopts as the metal micrometer structure of Fig. 3 c, can in metal micrometer structure, make as shown the nanostructure of corresponding visible ray filtering, reduce the impact of metal top layer 55 on transmission of visible light.In this embodiment, heat-sensitive material layer 66 is vanadium oxide, in order to the THz wave power conversion that Terahertz metamaterial structure is absorbed, is the signal of telecommunication.Be all arrangements of carrying out pixel similar to Figure 6 of the hot sensor array of visible ray sensing array or Terahertz, different pixels realizes the filtering of different wave length as A, B, C and D, and forms together a super cellular, periodically forms array.Final silicon-based transistor corresponding to each pixel completes the opto-electronic conversion of visible light signal or the conversion of the photo-thermal of terahertz wave signal electricity, thereby realizes biobelt imaging function.In practical application, in super cellular, number of pixels and arrangement mode are not limited by this example.
Summarize it, than existing visible light sensor or the terahertz imaging system only having singly with imaging function, integrated-type biobelt cmos digital imageing sensor disclosed by the invention has the simultaneously function of visual light imaging and terahertz imaging, and the framework of integrated-type has advantages such as volume is little, low-cost, high efficiency.
It should be noted that, that disclosed is a kind of of preferred embodiment, the change of every part or modification and come from technological thought of the present invention and be have the knack of this technology people was easy to know by inference, all do not depart from patent right scope of the present invention.
Claims (10)
1. an integrated-type biobelt cmos digital imageing sensor, it is characterized in that, it comprises the integrated morphology mainly being formed at the direction Top-down design perpendicular to described sensor surface by silica-based visible light sensor array and Terahertz heat sensor array, and described integrated morphology comprises silicon substrate, separator, metal back layer, dielectric layer, metal top layer and the heat-sensitive material layer setting gradually along direction initialization;
Wherein, the regional area of at least described metal back layer has the periodic nano-structure that at least can be used as the chromatic filter of visible ray and the reflector of THz wave,
Meanwhile, the regional area of at least described metal top layer has the periodicity micrometer structure of the surface impedance matching layer that at least can be used as THz wave;
And described reflector, surface impedance matching layer coordinate formation to have the nearly Terahertz metamaterial structure of absorption characteristic completely with dielectric layer.
2. integrated-type biobelt cmos digital imageing sensor according to claim 1, is characterized in that, the impedance Z of described Terahertz metamaterial structure equals or close to vacuum impedance 376.7 Ω, wherein,
, ε and μ are respectively dielectric constant and the magnetic permeability of described metamaterial structure.
3. integrated-type biobelt cmos digital imageing sensor according to claim 1, is characterized in that, the cycle of described periodic nano-structure is less than 600 nanometers, and thickness is greater than 50 nanometers.
4. integrated-type biobelt cmos digital imageing sensor according to claim 1, is characterized in that, the cycle of described periodicity micrometer structure is greater than 10 microns, and thickness is greater than 50 nanometers.
5. integrated-type biobelt cmos digital imageing sensor according to claim 1, is characterized in that, in described periodicity micrometer structure, also distributes and has the nanostructure of visible ray filter function.
6. integrated-type biobelt cmos digital imageing sensor according to claim 1, is characterized in that, described heat-sensitive material layer is mainly formed by thermo-sensitive material THz wave to high thermal resistivity.
7. integrated-type biobelt cmos digital imageing sensor according to claim 6, is characterized in that, described thermo-sensitive material comprises vanadium oxide, polysilicon or platinum.
8. integrated-type biobelt cmos digital imageing sensor according to claim 1, it is characterized in that, described metal back layer and/or metal top layer comprise the overlaying structure of single metal level, alloy-layer, the overlaying structure of two or more single metal levels, the overlaying structure of two or more alloy-layers or more than one single metal levels and more than one alloy-layers that any one in gold, silver, copper, aluminium, platinum, titanium at least or two or more alloys form.
9. according to the integrated-type biobelt cmos digital imageing sensor described in claim 1 or 8, it is characterized in that, the thickness of described metal back layer and/or metal top layer is in 50-300 nanometers.
10. integrated-type biobelt cmos digital imageing sensor according to claim 1, is characterized in that, the dielectric material that described dielectric layer is mainly absorbed by low visible light forms, and described dielectric material comprises silicon dioxide, silicon nitride, alundum (Al2O3) or polymer.
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| CN106441062A (en) * | 2016-10-19 | 2017-02-22 | 武汉市工程科学技术研究院 | Linear displacement sensor based on dual-layer electromagnetic metamaterial |
| CN111539234A (en) * | 2020-05-28 | 2020-08-14 | 厦门大学 | Molecular barcode detection method based on modular super-structure surface and CMOS image sensor |
| CN112366244A (en) * | 2020-10-15 | 2021-02-12 | 复旦大学 | Fin type photovoltaic silicon-based plasmon hot carrier infrared detection chip and manufacturing method thereof |
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