CN103515406B - Integrated-type dual-band CMOS digital image sensor - Google Patents
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Abstract
The invention discloses a kind of integrated-type dual-band CMOS digital image sensor, comprise the integrated morphology formed at the direction Top-down design perpendicular to described sensor surface primarily of silica-based visible light sensor array and Terahertz thermal sensor array, described integrated morphology comprises the silicon substrate, separator, metal back layer, dielectric layer, metal top layer and the heat-sensitive material layer that set gradually along direction initialization; Wherein, the regional area of at least described metal back layer has the periodic nano-structure that at least can be used as the chromatic filter of visible ray and the reflector of THz wave, and the regional area of at least described metal top layer has the periodic micrometer structure of the surface impedance matching layer that at least can be used as THz wave; And described reflector, surface impedance matching layer coordinate the Terahertz metamaterial structure being formed and have nearly absorption characteristic completely with dielectric layer.The present invention has visual light imaging and terahertz imaging function simultaneously, and integration framework also has advantages such as volume is little, low cost, high efficiency.
Description
Technical field
The present invention relates to a kind of imageing sensor, be specifically related to a kind ofly in the integrated-type CMOS digital image sensor of visible ray and terahertz wave band imaging simultaneously, digital image sensor technical field to be belonged to.
Background technology
Along with the demand to digitized video that society is growing, digital imaging technology is developed so far from the seventies and remains the swift and violent impetus always.Except consumption electronic products such as digital cameras, it has been widely used in the aspects such as real-time monitoring, video conference, robot vision, biological medicine analysis, food material quality monitoring and Aero-Space.Have benefited from fast development and the maturation process of silicon base CMOS, large array visible light sensor achieves huge progress, and such as Nikon D800 camera chip ultimate resolution used reaches 7360 × 4912.Calendar year 2001, the research group of Stanford Univ USA proposed to utilize phasmon effect that metal Nano structure can be utilized in CMOS digital image sensor to substitute dyestuff colour filter based on polymer, be expected to improve resolution further, and improve device stability and reduce costs.Recently, terahertz imaging becomes study hotspot, the penetrability good due to it and low biological damage, in safety check etc., have great application potential.Within 2008, Belgian research group illustrates the terahertz filter based on metal micro structure.2012, U.S.'s computer MSR Information system illustrated the THz wave transducer based on micro-electromechanical technology and metamaterial structure.On the other hand, except common single tape imaging, biobelt imaging can simultaneously spectra re-recorded and spatial information, need not use beam separation or optical dispersion system, if ultraviolet infrared imaging sensor is Primary Component in fields such as military affairs detection and guidances.Current biobelt imaging sensor concentrates on infrared band, and needs complicated heterogeneous epitaxial technology or bonding techniques.Homogeneity question due to compound semiconductor materials extension is difficult to the sensor cover battle array obtaining large array.Current, there is integrated-type biobelt imaging sensor or the blank of visible light wave range imaging and terahertz imaging ability simultaneously.
Summary of the invention
For the deficiencies in the prior art, main purpose of the present invention is to provide a kind of integrated-type dual-band CMOS digital image sensor.
For realizing aforementioned invention object, present invention employs following technical scheme:
A kind of integrated-type dual-band CMOS digital image sensor, comprise the integrated morphology formed at the direction Top-down design perpendicular to described sensor surface primarily of silica-based visible light sensor array and Terahertz thermal sensor array, described integrated morphology comprises the silicon substrate, separator, metal back layer, dielectric layer, metal top layer and the heat-sensitive material layer that set gradually along direction initialization;
Wherein, the regional area of at least described metal back layer has the periodic nano-structure that at least can be used as the chromatic filter of visible ray and the reflector of THz wave,
Meanwhile, the regional area of at least described metal top layer has the periodic micrometer structure of the surface impedance matching layer that at least can be used as THz wave;
Further, described reflector, surface impedance matching layer coordinate the Terahertz metamaterial structure being formed and have nearly absorption characteristic completely with dielectric layer.
Further, the impedance Z of described metamaterial structure equal or close to (such as, deviation amplitude can be controlled in ± 10% within) vacuum impedance 376.7 Ω, wherein,
, ε and μ is respectively dielectric constant and the magnetic permeability of described metamaterial structure, makes THz wave in the reflection at interface equal or close to zero.
Further, described metal back layer has periodic nano-structure, and the cycle is less than 600 nanometers, and thickness is greater than 50 nanometers.
Further, described metal top layer has periodic micrometer structure, and the cycle is greater than 10 microns, and thickness should be enough to stop light therethrough completely, is especially preferably more than 50 nanometers.
Further, also can distribute in the periodic micrometer structure of described metal top layer and there is the nanostructure of visible ray filtering.
Further, described heat-sensitive material layer has the high thermal resistivity to THz wave, as vanadium oxide, polysilicon and platinum etc.
Described metal back layer and/or metal top layer can adopt the overlaying structure of single metal level, alloy-layer, multiple single metal level or the alloy-layer formed by gold, silver, copper, aluminium, platinum, titanium etc., or the overlaying structure of single metal level and alloy-layer, and be not limited thereto.
The thickness of described metal back layer and/or metal top layer is preferably 50-300 nanometer.
The dielectric material that described dielectric layer absorbs primarily of low visible light is formed.
Compared with prior art, advantage of the present invention is at least:
(1) by thermo-sensitive material is integrated in there is nearly absorption characteristic completely metamaterial structure in, thus the absorption improved THz wave and the change of corresponding thermal resistance, the i.e. sensitivity of Terahertz heat sensor;
(2) realized the filter function of visible ray by metal Nano structure, compared to polymeric dye colour filter, there is Flouride-resistani acid phesphatase, the advantage such as integrated level is high, technique is simple and designability is good;
(3) due to the greatest differences of visible wavelength and Terahertz wavelength, preferably, can also the metal Nano structure as visible light filter can be integrated in the micrometer structure of THz wave Meta Materials, and do not affect the function of Terahertz Meta Materials, and visible light sensor and Terahertz transducer are all based on silicon materials, therefore by visible light sensor and THz wave transducer Top-down design, biobelt imaging simultaneously can be realized.Have benefited from the maturity of silicon CMOS technology, can obtain large array can the transducer of biobelt digital imagery.
Accompanying drawing explanation
Explain further below in conjunction with accompanying drawing and content of the present invention is described.But, the following drawings is only the schematic diagram of idealized embodiments of the present invention, wherein in order to the structure of clear displaying device involved in the present invention, suitable amplification has been carried out to the thickness in wherein selected layer and region, but it should not be considered to as schematic diagram the proportionate relationship strictly reflecting physical dimension.In addition, illustrated embodiment also should not be considered to the given shape being only limitted to the region shown in figure.In general, following accompanying drawing is schematic, should not be considered to limit the scope of the invention.
Fig. 1 is the longitudinal profile schematic diagram of integrated-type dual-band CMOS digital image sensor in the present invention one alternative;
Fig. 2 a-Fig. 2 c is respectively the schematic top plan view of metal back layer in integrated-type dual-band CMOS digital image sensor in the present invention one alternative, wherein, Fig. 2 a is the metal back layer with One Dimension Periodic nanostructure, and Fig. 2 b-Fig. 2 c is respectively the metal back layer with two-dimension periodic nanostructure;
Fig. 3 a-Fig. 3 c is respectively the schematic top plan view of metal top layer in integrated-type dual-band CMOS digital image sensor in the present invention one alternative, wherein, Fig. 3 a is the metal top layer with One Dimension Periodic micrometer structure, Fig. 3 b is the metal back layer with two-dimension periodic micrometer structure, Fig. 3 c is the metal back layer with two-dimension periodic micrometer structure, and micrometer structure comprises cycle nanostructure;
Fig. 4 is the nanostructure optical transmission spectra of corresponding Green filter in metal back layer in integrated-type dual-band CMOS digital image sensor in the present invention one alternative;
Fig. 5 is the absorptivity spectrum of Terahertz metamaterial structure in integrated-type dual-band CMOS digital image sensor in the present invention one alternative;
Fig. 6 is the vertical view of pel array in integrated-type dual-band CMOS digital image sensor in the present invention one alternative.
Embodiment
The present invention aims to provide a kind of integrated-type dual-band CMOS digital image sensor, and it forms primarily of silica-based visible light sensor array and Terahertz thermal sensor array, and both are at the direction Top-down design perpendicular to the plane of incidence.
Further, this integrated-type dual-band CMOS digital image sensor at least comprises the silicon substrate, separator, metal back layer, dielectric layer, metal top layer and the heat-sensitive material layer that distribute successively in a certain direction;
Wherein, metal back layer regional area has periodic nano-structure, on the one hand as the chromatic filter of visible ray, on the other hand as the reflector of THz wave; Metal top layer regional area has periodic micrometer structure, as the surface impedance matching layer of THz wave, and reflector, surface impedance matching layer, and dielectric layer between the two coordinates the Terahertz metamaterial structure being formed and have nearly absorption characteristic completely.
Aforementioned metal bottom, dielectric layer, metal top layer form the Terahertz metamaterial structure having and closely absorb completely together.Further, by regulating and controlling refractive index and the thickness of aforementioned dielectric layer, the periodic structure of metal top layer micrometer structure and thickness, optimal design the nearly metamaterial structure absorbed completely of different-waveband can be operated in.Such as, as preferably one of application scheme, DIELECTRIC CONSTANT ε and the magnetic permeability μ of metamaterial structure can be optimized by Numerical Aanlysis Methods of Electromagnetic Field, make the impedance of metamaterial structure
equal or close to 376.7 Ω, thus obtain the impedance matching on surface, inhibitory reflex loss, in conjunction with the reflection effect of metal back layer, obtain nearly 100% complete light restriction.
The cycle of aforementioned metal top layer micrometer structure should be less than the operation wavelength of Terahertz heat sensor, thus ensure its metamaterial structure characteristic, but for the form of the periodic unit of aforementioned metal top layer micrometer structure, there is not restriction, it can be determined according to the needs of practical application.
The cycle of aforementioned metal bottom nanostructure should be less than 600 nanometers, thus ensure its visible light wave range filtering characteristic, but for the form of the periodic unit of aforementioned metal bottom nanostructure, also there is not restriction in it, and can determine according to the needs of practical application.
Aforementioned metal bottom and metal top layer material can be selected but be not limited to the overlaying structure of the single metal levels such as gold, silver, copper, aluminium, platinum, titanium, alloy-layer or multiple single metal level or alloy-layer, the copper of preferred employing and CMOS technology compatibility and aluminium, its thickness preferably more than 50 nanometers, especially 50 nanometer-300 nanometers.
The material of aforesaid dielectric layer is the dielectric material that low visible light absorbs, and such as, can select but be not limited to silicon dioxide, silicon nitride, alundum (Al2O3), polymer etc., preferably adopts and the silicon dioxide of CMOS technology compatibility and silicon nitride.
Aforesaid heat-sensitive material layer adopts the material with Terahertz wave height thermal resistivity, can select but be not limited to vanadium oxide, polysilicon and platinum etc., preferably adopting vanadium oxide.
Aforementioned metal bottom has periodic nano-structure, by regulating and controlling its cycle and cellular construction, can form the filter of visible ray different-waveband.
Aforementioned metal top layer has periodic micrometer structure, by regulating and controlling its cycle and cellular construction, can form the surface impedance matching layer of THz wave different-waveband.
In other words, the filter function of visible ray is realized by the periodic nano-structure of aforementioned metal bottom, the Meta Materials that the frequency-selecting function of THz wave is made up of metal back layer, dielectric layer and metal top layer realizes, and the opto-electronic conversion of visible light sensor and the photo-thermal electricity of Terahertz heat sensor are changed and all passed through silicon base CMOS circuit and read also imaging.
Aforementioned metal top layer micrometer structure can also comprise the nanostructure that can realize visible ray filtering, to increase the transmitance of metal top layer to visible ray.
This integrated-type dual-band CMOS digital image sensor under visible light illumination, visible ray is penetrating metal top layer, dielectric layer and metal back layer respectively, the photodiode arrived on silicon substrate realizes photoelectric signal transformation, and the wavelength photoreceptor of each pixel of visible light sensor is determined by the metal Nano structure designed.
This integrated-type dual-band CMOS digital image sensor is under THz wave is irradiated, THz wave is long-range is greater than the aforementioned metal nanostructure cycle, therefore no matter be the function that metal top layer or the nanostructure of metal back layer do not affect Meta Materials, THz wave by local at dielectric layer, the wavelength photoreceptor of each pixel of Terahertz heat sensor is determined by the Meta Materials designed, and is realized the conversion of photo-thermal electricity by heat-sensitive material layer.
Because visible ray and THz wave can without being detected of mutually disturbing respectively, and visible ray sensor array and the hot sensor array of Terahertz can Top-down designs, therefore integrated-type dual-band CMOS digital image sensor of the present invention can realize the imaging of visible ray and THz wave simultaneously, and by the technique with silicon base CMOS maturation, the biobelt transducer of large array can be obtained.
Below in conjunction with some preferred embodiments and relevant drawings, technical scheme of the present invention is described in detail:
Consulting shown in Fig. 1 is the grapheme transistor photo-detector longitudinal sectional drawing of the present embodiment based on metamaterial structure, it comprises in silicon substrate 11, separator 22, metal back layer 33, dielectric layer 44, metal top layer 55 and heat-sensitive material layer 66, figure is incident light shown in arrow 77.In this embodiment, metal back layer 33 has cycle nanostructure, realizes pseudo-colour filtering and the Terahertz wave reflection of visible ray simultaneously.As shown in Figure 2, the nanostructure of metal back layer 33 can be that the periodic structure of one dimension (Fig. 2 a) or the periodic structure of two dimension (Fig. 2 b and 2c), can obtain through optimal design and realizes through the specific band of visible ray and realize reflection to its all band.Such as, the nanometer array of circular apertures of the triangular lattice in 150 nanometer thickness aluminium films, is 330 nanometers when the cycle, and when Circularhole diameter is 180 nanometer, can realize the filtering to green glow, optical transmission spectra is shown in Fig. 4.In this embodiment, metal top layer 55 has cycle micrometer structure, as THz wave impedance matching box, reduce the reflection loss of THz wave at interface, and binding medium layer and the metal back layer with strong reflection effect, form Terahertz metamaterial structure together, form the hypersorption to incident THz wave nearly 100%.As shown in Figure 3, the micrometer structure of metal top layer 55 can be that the periodic structure of one dimension (Fig. 3 a) or the periodic structure of two dimension (Fig. 3 b) or comprise the cycle micrometer structure (3c) of cycle nanostructure, can obtain through optimal design and realizes absorbing to the specific band of THz wave and realize reflection to its all band.Such as, when the gold that metal back layer 33 is thickness 200 nanometers, dielectric layer 44 is polyimides of 4 micron thickness, metal top layer 55 is 220 nanometer thick gold membranes, and prepares the tetragonal micrometer structure as Fig. 3 b at metal top layer 55, is 28 microns when the cycle, the outer length of side of square loop 19 microns, during ring width 0.5 micron, can realize the strong absorption to 2.9THz ripple, absorptivity spectrum is shown in Fig. 5.Can see that metal filled rate in this example in metal top layer 55 is less than 5%, very little on the transmission impact of visible ray.If metal top layer 55 adopts the metal micro structure as Fig. 3 c, the nanostructure of corresponding visible ray filtering can be made as shown in metal micro structure, reduce metal top layer 55 to the impact of transmission of visible light.In this embodiment, heat-sensitive material layer 66 is vanadium oxide, and the THz wave power conversion in order to be absorbed by Terahertz metamaterial structure is the signal of telecommunication.Be visible ray sensor array or the arrangement carrying out pixel all similar to Figure 6 of the hot sensor array of Terahertz, different pixels such as A, B, C and D realize the filtering of different wave length, and form a super cellular together, periodically form array.Silicon-based transistor corresponding to final each pixel completes the opto-electronic conversion of visible light signal or the photo-thermal electricity conversion of terahertz wave signal, thus realizes biobelt imaging function.In practical application, in super cellular, number of pixels and arrangement mode do not limit by this example.
Summarize it, compared to the existing visible light sensor or the terahertz imaging system that only have single tape imaging function, integrated-type dual-band CMOS digital image sensor disclosed by the invention has the function of simultaneously visual light imaging and terahertz imaging, and the framework of integrated-type has advantages such as volume is little, low cost, high efficiency.
It should be noted that, the one of preferred embodiment that disclosed is, the change of every local or modification and come from technological thought of the present invention and be easy to by the people that has the knack of this technology to know by inference, all do not depart from patent right scope of the present invention.
Claims (10)
1. an integrated-type dual-band CMOS digital image sensor, it is characterized in that, it comprises the integrated morphology formed at the direction Top-down design perpendicular to described sensor surface primarily of silica-based visible light sensor array and Terahertz thermal sensor array, and described integrated morphology comprises the silicon substrate, separator, metal back layer, dielectric layer, metal top layer and the heat-sensitive material layer that set gradually along direction initialization;
Wherein, the regional area of described metal back layer has the periodic nano-structure that can be used as the chromatic filter of visible ray and the reflector of THz wave,
Meanwhile, the regional area of described metal top layer has the periodic micrometer structure of the surface impedance matching layer that can be used as THz wave;
Further, described reflector, surface impedance matching layer coordinate the Terahertz metamaterial structure being formed and have nearly absorption characteristic completely with dielectric layer.
2. integrated-type dual-band CMOS digital image sensor according to claim 1, is characterized in that, the impedance Z of described Terahertz metamaterial structure equal or close to vacuum impedance 376.7 Ω, wherein,
ε and μ is respectively dielectric constant and the magnetic permeability of described metamaterial structure.
3. integrated-type dual-band CMOS digital image sensor according to claim 1, is characterized in that, the cycle of described periodic nano-structure is less than 600 nanometers, and thickness is greater than 50 nanometers.
4. integrated-type dual-band CMOS digital image sensor according to claim 1, is characterized in that, the cycle of described periodic micrometer structure is greater than 10 microns, and thickness is greater than 50 nanometers.
5. integrated-type dual-band CMOS digital image sensor according to claim 1, is characterized in that, in described periodic micrometer structure, also distribution has the nanostructure of visible ray filter function.
6. integrated-type dual-band CMOS digital image sensor according to claim 1, is characterized in that, described heat-sensitive material layer is formed primarily of thermo-sensitive material THz wave to high thermal resistivity.
7. integrated-type dual-band CMOS digital image sensor according to claim 6, is characterized in that, described thermo-sensitive material comprises vanadium oxide, polysilicon or platinum.
8. integrated-type dual-band CMOS digital image sensor according to claim 1, it is characterized in that, described metal back layer and/or metal top layer adopt the overlaying structure of single metal level, alloy-layer, multiple single metal level or the alloy-layer formed by gold, silver, copper, aluminium, platinum or titanium, or the overlaying structure of single metal level and alloy-layer.
9. the integrated-type dual-band CMOS digital image sensor according to claim 1 or 8, is characterized in that, the thickness of described metal back layer and/or metal top layer is in 50-300 nanometer.
10. integrated-type dual-band CMOS digital image sensor according to claim 1, is characterized in that, the dielectric material that described dielectric layer absorbs primarily of low visible light is formed, and described dielectric material comprises silicon dioxide, silicon nitride, alundum (Al2O3) or polymer.
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| CN102620826A (en) * | 2011-01-26 | 2012-08-01 | 美士美积体产品公司 | Light sensor having IR cut interference filter with color filter integrated on-chip |
| CN103117316A (en) * | 2013-01-30 | 2013-05-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | Graphene transistor based on metamaterial structure, optical sensor based on metamaterial structure, and application of graphene transistor |
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| CN102386202A (en) * | 2010-08-26 | 2012-03-21 | 索尼公司 | Solid-state imaging device, manufacturing method thereof, and electronic apparatus |
| CN102620826A (en) * | 2011-01-26 | 2012-08-01 | 美士美积体产品公司 | Light sensor having IR cut interference filter with color filter integrated on-chip |
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