CN103515178B - Plasma etching apparatus - Google Patents
Plasma etching apparatus Download PDFInfo
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- CN103515178B CN103515178B CN201210214130.6A CN201210214130A CN103515178B CN 103515178 B CN103515178 B CN 103515178B CN 201210214130 A CN201210214130 A CN 201210214130A CN 103515178 B CN103515178 B CN 103515178B
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 67
- 230000005284 excitation Effects 0.000 claims abstract description 40
- 238000005530 etching Methods 0.000 claims abstract description 33
- 230000001808 coupling Effects 0.000 claims description 36
- 238000010168 coupling process Methods 0.000 claims description 36
- 238000005859 coupling reaction Methods 0.000 claims description 36
- 230000005611 electricity Effects 0.000 claims description 6
- 230000001939 inductive effect Effects 0.000 claims description 3
- 210000002381 Plasma Anatomy 0.000 abstract description 25
- 230000000694 effects Effects 0.000 abstract description 19
- 150000001768 cations Chemical class 0.000 description 14
- 230000005684 electric field Effects 0.000 description 8
- 230000000644 propagated Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 230000003628 erosive Effects 0.000 description 2
- 230000001965 increased Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006011 modification reaction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000035693 Fab Effects 0.000 description 1
- 230000001427 coherent Effects 0.000 description 1
- 230000000875 corresponding Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000338 in vitro Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000149 penetrating Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001902 propagating Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Abstract
A kind of plasma etching apparatus, including: process cavity；Being positioned at the first electrode of described process cavity, the second electrode, the first electrode and the second electrode staggered relatively, described first electrode includes at least two pieces of pole plates；Excitation radio frequency unit, the number of excitation radio frequency unit is equal with the number of pole plate, each pole plate electrically connects one to one with each excitation radio frequency unit, and described excitation radio frequency unit is for providing excitation energy by etching gas in process cavity of each pole plate of the first electrode.Different by arranging the output frequency of each excitation radio frequency unit described, or described each excitation radio frequency unit transmitting radio frequency between there is phase contrast, or the transmitting frequency of radio frequency, phase place are the most different, this device can avoid the electromagnetic wave in process cavity to occur to propagate in opposite directions and occur coherence to produce standing wave.Weaken and even eliminate the standing wave effect in process cavity, it is possible to obtain the plasma of high density uniformity, reach the etching of the uniformity to large scale wafer.
Description
Technical field
The present invention relates to semiconductor applications, particularly relate to a kind of plasma etching apparatus.
Background technology
In prior art, plasma etching is as a kind of conventional wafer etching technics, with suitable gas
Body is as etching gas, by energy source, and such as high frequency capacitive coupling RF generator or high frequency perception coupling
Close RF generator excitation etching gas and form plasma, then there is no photoetching with described plasma etching
The region of mask, can form required figure in wafer.
In the prior art, with reference to Fig. 1, plasma etching apparatus specifically includes that have opening 11
Process cavity 18, this opening 11 is for the input of etching gas；It is positioned at the top crown 12 of process cavity 18,
Bottom crown 14；DC source 13, one end is connected with top crown 12, another termination high frequency capacitive coupling RF
Generator 15；Another termination low frequency capacitive coupling RF generator of high frequency capacitive coupling RF generator 15
16；The other end of low frequency capacitive coupling RF generator 16 is connected with bottom crown 14 by electric capacity 17.Its
In, the connection between high frequency capacitive coupling RF generator 15 and low frequency capacitive coupling RF generator 16 is led
Line ground connection, wafer (not shown) lies in a horizontal plane on bottom crown 14.
During the work of this device, etching gas enters process cavity 18, high frequency capacitive coupling RF by opening 11
The radio frequency that generator 15 is launched produces vibration highfield by top crown 12 in process cavity 18.This vibration
Highfield excitation etching gas produces plasma, and accelerates the cation in plasma, and bombardment is placed in
Wafer (not shown) on bottom crown 14.Wherein, electric capacity 17 stop high-frequency oscillation signal by and shadow
Ring bottom crown 14.
During specific works, low frequency capacitive coupling RF generator 16 is used for the bombardment controlled near bottom crown 14
The energy of cation.In practical operation, while closing high frequency capacitive coupling RF generator 15, logical
Cross the frequency parameter that suitable low frequency capacitive coupling RF generator 16 is set, to increase bombardment cation
Energy, thus obtain higher etch rate；Or by regulation low frequency capacitive coupling RF generator 16
Frequency, with reduce bombardment cation energy, thus prevent cation energy excessive and may damage crystalline substance
Circle substrate surface.In practical operation, the number of low frequency capacitive coupling RF generator can be increased as required
Amount, to reach more preferable bombardment effect.
In prior art, it is also possible to replace low frequency capacitive coupling RF generator with DC bias supplies, or
Increasing DC bias supplies, DC bias supplies is connected with bottom crown, is controlled by this DC bias supplies
Plasma bombards the energy of cation.Therefore can select according to actual needs low frequency bias power supply or
Person's DC bias supplies.
More contents about plasma etching apparatus may refer to disclosed in 29 days April in 2009
EP2053630A2 European patent document.
When utilizing existing plasma etching apparatus that 250mm or 300mm wafer is performed etching,
If needing to obtain high density, large-area plasma, it is necessary to increase the radio frequency frequency of high frequency RF generator
Rate.However, it has been found in practice that, along with frequency increases (27.1MHz, 60MHz, 160MHz),
There will be the problem that the wafer Etching profile sidewall shape of figure (Etching profile refer to be etched) is uneven,
Thus obtain semiconductor chip defective, and reduce the performance of chip, resulting even in chip cannot work.
Especially, when modern semiconductor processes is towards 450nm wafer, and even more large scale wafer strides forward, existing
Defect existing for some plasma etching apparatus constrains technological progress.
Summary of the invention
The problem that the present invention solves is that the plasma etching apparatus of prior art can produce in etching technics
The problem that wafer etching is uneven.
For solving the problems referred to above, the present invention provides a kind of plasma etching apparatus, including: process cavity；
It is positioned at the first electrode of described process cavity, the second electrode, the first electrode and the second electrode staggered relatively,
First electrode includes at least two pieces of pole plates；Excitation radio frequency unit, the number of excitation radio frequency unit and pole plate
Number is equal, and each pole plate electrically connects one to one with each excitation radio frequency unit, described excitation radio frequency unit
For providing excitation energy by each pole plate of the first electrode etching gas in process cavity.
Optionally, every piece of pole plate of described first electrode is closed ring structure, logical between each pole plate
Cross ring set mode to arrange.
Optionally, the closed ring structure of each pole plate described is straight-flanked ring structure or cirque structure.
Optionally, the first electrode includes one piece of plane pole plate and at least one piece of enclosed annular pole plate, each
Pole plate is arranged by ring set mode, and wherein, enclosed annular pole plate surrounds plane pole plate.
Optionally, each pole plate of the first electrode is arcuate structure, and its concave surface and the second electrode are relative；Or
Second electrode described in person is arcuate structure, and its concave surface and the first electrode are relative；Or each of the first electrode
Pole plate and the first electrode are arcuate structure, and the concave surface of each pole plate described and the second electrode are relative, and second
Concave surface and first electrode of electrode are relative.
Optionally, plasma etching apparatus also includes: bias supply, electrically connects with the second electrode.
Optionally, the second electrode includes at least two pieces of pole plates, the pole plate number of the second electrode and the first electrode
Pole plate number identical, the pole plate of the first electrode and the pole plate of the second electrode are the most relative in process cavity；
The number of described bias supply is equal with the number of the pole plate of described second electrode, each pole of the second electrode
Plate electrically connects one to one with each bias supply.
Optionally, space is left between the neighboring edge of each pole plate of described second electrode.
Optionally, every piece of pole plate of described composition the second electrode is closed ring structure, the second electrode
Every piece of pole plate between arranged by ring set mode.
Optionally, the closed ring structure of each pole plate constituting the second electrode be straight-flanked ring structure or
Cirque structure.
Optionally, the second electrode includes one piece of plane pole plate and at least one piece of enclosed annular pole plate, second
All pole plates of electrode are arranged by ring set mode, and wherein, the enclosed annular pole plate of the second electrode surrounds
Plane pole plate.
Optionally, each pole plate of described second electrode is arcuate structure, and concave surface and the first electrode are relative.
Optionally, described bias supply includes: low frequency capacitive coupling radio-frequency signal generator or DC source, or
Person includes low frequency capacitive coupling radio-frequency signal generator and DC source.
Optionally, described each excitation radio frequency unit includes: high frequency capacitive coupled RF generator, or
The inductive coupled radio-frequency signal generator of high frequency.
Compared with prior art, the invention have the advantages that
The plasma etching apparatus of the present invention, the first electrode is made up of at least two pieces of pole plates, encourages radio frequency
The number of unit is equal with the number of pole plate, and each pole plate electrically connects one to one with each excitation radio frequency unit.
Described excitation radio frequency unit passes through each pole plate of the first electrode etching gas in entering process cavity to be provided
Excitation energy, energized gas produces plasma.Wherein, by presetting, or in practical operation
Rf frequency according to each excitation radio frequency unit transmitting of the Auto-regulating System of Density of Heavy Medium of plasma in process cavity, phase place,
The rf frequency making each excitation radio frequency unit launch is different, or there is phase contrast between the radio frequency launched,
Or both of which is different.Due to the rf frequency that each excitation radio frequency unit can be made to launch, both phase places
Among at least one differs, therefore can weaken the coherence of electromagnetic wave in process cavity, thus can
To weaken the standing wave effect even eliminating in process cavity so that the Electric Field Distribution in process cavity is more uniform,
The Density Distribution of the plasma produced in process cavity is more uniform, and then to the etch rate of wafer
Uniformity also can be improved, and final acquisition has the semiconductor chip of higher etching homogeneity.Further,
The plasma etching apparatus of this invention meets large scale wafer, such as the etching work of 450mm wafer
Skill, to density uniformity highly, the demand of large area plasma, is 450mm wafer fab technique
A quantum jump technically, promotes the fast development of semiconductor technology.
In specific embodiment, constitute each pole plate of the first electrode and be arcuate structure or the second electrode is arc
Shape structure, or both are arcuate structure.Wherein, the concave surface and second of each pole plate of the first electrode
Electrode is relative, and concave surface and first electrode of the second electrode are relative.By improving the first electrode, the second electrode
Shape, change the direction of the electromagnetic wave propagated in process cavity further, thus reach preferably to eliminate
Coherence, even eliminates standing wave preferably to weaken, it is hereby achieved that density uniformity face more preferable, big
Long-pending plasma.
In specific embodiment, electrically connect by arranging bias supply and the second electrode, formed in process cavity
Along being perpendicular to the electric field that the second electrode direction is propagated, change the electricity in the plasma in process cavity further
The sub-direction of motion, thus change the electromagnetic wave propagation direction produced by the motion of electronics, one can be entered
Step eliminates relevant and standing wave, further add the density uniformity of plasma.
Accompanying drawing explanation
Fig. 1 is the structural representation of the plasma etching apparatus of prior art；
Fig. 2 is the structural representation of the plasma etching apparatus of first embodiment of the invention；
Fig. 3 is that the first electrode of the plasma etching apparatus of the embodiments of the invention of Fig. 2 is along A-A ' side
To profile；
Fig. 4 is the first electrode edge of the plasma etching apparatus of the another embodiment of the present invention of Fig. 2
The profile in A-A ' direction；
Fig. 5 is the first electrode edge of the plasma etching apparatus of the another embodiment of the present invention of Fig. 2
The profile in A-A ' direction；
Fig. 6 is the structural representation of the plasma etching apparatus of second embodiment of the invention；
Fig. 7 is the structural representation of the plasma etching apparatus of third embodiment of the invention；
Fig. 8 is the structural representation of the plasma etching apparatus of fourth embodiment of the invention；
Fig. 9 is the structural representation of the plasma etching apparatus of fifth embodiment of the invention；
Figure 10 is the structural representation of the plasma etching apparatus of sixth embodiment of the invention.
Detailed description of the invention
According to the calibration relation known, plasma density is proportional to drive the quadratic sum of supply frequency to apply
Driving voltage.When etching has the wafer of large surface area, in order to obtain high density, large-area
Plasma, it will usually increase the frequency values driving power supply.Inventor finds through research: along with frequency
More than 27.1MHz, occurring in that standing wave effect in process cavity being detected, the existence of this standing wave effect result in
Uneven etching effect.Inventor is after further research, it was found that produce the reason of standing wave.
With reference to Fig. 1, high frequency capacitive coupling RF generator 15 is produced at technique 18 intracavity by top crown 12
Raw vibration highfield.Electronics in plasma is high-speed motion under the effect of vibration highfield, thus
Produce each to the electromagnetic wave propagated in process cavity 18.But, inventor monitors, along with RF generator
The rf frequency of 15 is obviously reduced more than 27.1MHz, the wavelength of electromagnetic wave.When the wavelength of electromagnetic wave is with upper
When the size of pole plate 12 is suitable, an edge can be excited to be parallel to top crown in the centre of process cavity 18
The electromagnetic wave that in-plane is propagated, i.e. standing wave, so that the electric field intensity in the centre of process cavity 18
Electric field intensity higher than other positions of process cavity so that along the plasma being parallel to top crown in-plane
Density Distribution is uneven, then causes the number of densities bombarding cation in plasma and energy
Density is the most uneven along the distribution being parallel to top crown in-plane, then plasma etch rate is the most uneven
Even, finally causing etching rate and Etching profile (to refer to along wafer radially (referring to the direction along wafer radius)
The sidewall shape of the figure that is etched of wafer) inhomogeneities.
On the other hand, incide the electromagnetic wave on top crown 12 and top crown 12 reflection electromagnetic wave between,
Incide between the electromagnetic wave of the electromagnetic wave in the cavity wall of process cavity 18 and cavity wall reflection and incide down
Can occur relevant between electromagnetic wave and the electromagnetic wave of bottom crown 14 reflection on pole plate 14 because propagating in opposite directions
Property, thus produce standing wave further, have influence on the uniformity effects of etching too.
Based on above reason, the present invention provides a kind of plasma etching apparatus, eliminates standing wave effect.
In order to make those skilled in the art be more fully understood that the present invention, describe this below in conjunction with the accompanying drawings in detail
Bright detailed description of the invention.But, the present invention can be embodied as many multi-forms, is not considered as limiting
In the exemplary embodiment herein proposed.Further it is provided that these embodiments make disclosure understand,
Completely, it is possible to the scope of the present invention is all conducted to those skilled in the art.In order to clear in accompanying drawing
For the sake of, the shape of element can be exaggerated.Reference identical in entire disclosure represents similar element.
For function commonly known in the art and structure, do not make in detailed description of the invention book further
Discuss, to avoid unnecessarily establishing the unclear of main points of the present invention.
First embodiment
With reference to Fig. 2, in first embodiment, plasma etching apparatus includes: the technique with opening 21
Chamber 28；It is positioned at the first electrode 22a of described process cavity 28, the second electrode 24a, described first electrode
Staggered relatively with the second electrode, described first electrode is positioned at the top of described process cavity, wherein the first electrode
22a includes pole plate 221a and pole plate 222a；Excitation radio frequency unit, the number of excitation radio frequency unit and pole plate
Number equal, each pole plate with each excitation radio frequency unit electrically connect one to one, described excitation radio frequency list
Unit is for providing excitation energy, at this by etching gas in process cavity of each pole plate of the first electrode
In first embodiment, including two excitation radio frequency units, respectively electrically connect with described pole plate 221a swashs
Encourage radio frequency unit 251, the excitation radio frequency unit 252 electrically connected with pole plate 222a, described excitation radio frequency list
The other end ground connection of unit 251,252；Second electrode 24a, wafer (not shown) is placed on the second electrode
On 24a.
In conjunction with reference to Fig. 2, Fig. 3 and Fig. 4, in the present embodiment, pole plate 221a is enclosed annular knot
Structure, pole plate 222a is plane pole plate structure, and both arrange in ring set mode, i.e. pole plate 222a is in pole plate
The central area of 221a, leaves space 23 between adjacent plate.In the embodiment shown in fig. 3, pole plate
221a is closed cirque structure, and pole plate 222a is circular flat electrode plate structure.In the reality shown in Fig. 4
Executing in example, pole plate 221a is rectangular ring structure, and pole plate 222a is rectangle plane electrode plate structure.The present invention
In, the shape of the pole plate 221a of loop configuration is not limited to annular, straight-flanked ring, can be various ring junction
Structure.The shape of the pole plate 222a of plane pole plate structure is not limited to circular flat pole plate, rectangle plane pole plate,
It can be the plane pole plate of each shape.
It is enumerated above the first electrode and includes the situation of two pole plates, but the first electrode is not limited to two pole plates,
When for three with top crown time, one of for plane pole plate, remaining is enclosed annular pole plate, each
Pole plate is arranged by ring set mode, and enclosed annular pole plate surrounds plane pole plate, i.e. each ring plate one
Ring set one ring, plane pole plate is positioned at the central area of innermost ring pole plate.
Being enumerated above in each pole plate of the first electrode, one piece is plane pole plate, and remaining is closed ring
The situation of shape pole plate, in first embodiment, it is also possible to be closed ring structure for each pole plate, respectively
Arranged by ring set mode between individual ring plate, i.e. each ring plate connects with one another closely.With reference to Fig. 5,
Pole plate 221a, 222a of first electrode are closed circular ring structure, and both arrange in ring set mode.Figure
Embodiment shown in 5, the first electrode includes two pole plates, but the quantity of the first pole plate can be more than three
Including three.
In the first embodiment, each pole plate constituting the first electrode is not limited to examples listed above, the
Each pole plate of one electrode can be the planar structure of planar structure, such as rectangle.Each pole plate is same
One arranged on planes, and, between each pole plate, there is space.In practice can be according to being etched crystalline substance
The size of circle or other needs, be set to include three or more pole plates by the first electrode, and
Design suitable pole plate shape.
In first embodiment, excitation radio frequency unit 251,252 can select high frequency capacitive coupling RF to occur
Device or high frequency inductive coupled RF generator, can select their frequency range, example according to the actual requirements
Radio frequency range as selected them is 27.1MHz-160MHz.
Device to this embodiment, etching gas by opening 21, the both sides of described first electrode 22a and
Space 23 between pole plate 221a and 222a enters process cavity 28.Only electrode compared to existing apparatus
And the space between process cavity allows gas into so that gas can enter in process cavity quickly,
And the distribution in process cavity is the most uniform.
Device to this embodiment, due to the first electrode 22a include the most independent two piece pole plate 221a,
222a, during relative to only one piece of pole plate, the size of each pole plate reduces.Then use high frequency or
During hyperfrequency (2GHz, 3GHz) excitation radio frequency unit, compared to existing apparatus, the size of pole plate is the least
The wavelength of the electromagnetic wave propagated in process cavity 28, the electromagnetic wave of counterpropagate will not occur coherence, keep away
Exempt from the central area in process cavity 28 and produced standing wave, thus weakened and even eliminate in process cavity 28
The standing wave effect of middle generation.
Owing to standing wave is to be occurred relevant by two train waves propagated in opposite directions that frequency of vibration, phase place are identical and produce
, therefore, before etching process starts, penetrating of excitation radio frequency unit 251,252 can be preset
Again and again rate, phase place, or change adjustment according to the plasma density in process cavity 28 in etching process
The frequency of described radio frequency unit, phase place so that the rf frequency between them is different or there is phase place
Differ from or there is different frequency and phase contrast simultaneously.Thus avoid the incidence on pole plate 221a and 222a
The coherence of reflection electromagnetic wave on electromagnetic wave and each pole plate, the incidence in the both sides cavity wall of process cavity 28
Incident electromagnetic wave on the coherence of the reflection electromagnetic wave on electromagnetic wave and cavity wall and the second electrode 24a
With the coherence of the reflection electromagnetic wave on the second electrode 24a, eliminate standing wave effect.
Owing to eliminating standing wave effect, therefore the Density Distribution of produced plasma is more uniform, can
To obtain high density plasma uniform, large-area.Uniform plasma makes etch rate more
Add uniformly, and finally realize the accurate etching of wafer, obtain preferable etched features.Especially can expire
Foot is to large scale wafer, such as the high uniformity etching requirement of 450mm wafer.
Second embodiment
With reference to Fig. 6, in the second embodiment, plasma etching apparatus includes: be electrically connected with the second electrode 24b
The low frequency capacitive coupling RF generator 261 connect and DC source 262, low frequency capacitive coupling RF generator
261 and the other end ground connection of DC source 262.Wherein, low frequency capacitive coupling RF generator 261 passes through
There is provided bias voltage to the second electrode 24b, in process cavity 28, form low-frequency oscillation electric field；DC source
262 by providing bias voltage to the second electrode 24b, forms consistent electric field in process cavity 28.At this
During the low-frequency oscillation electric field propagated in process cavity 28 and consistent electric field wait in vitro in can changing process cavity 28
The direction of motion of electronics, thus the part produced due to the high-speed motion of electronics in changing process cavity 28
Electromagnetic wave propagation direction, this can weaken further and even eliminates standing wave effect.First electrode 22b bag
Include two pole plate 221b and 222b, the shape of each pole plate, position relationship and the first electricity in first embodiment
The shape of two pole plates of pole, position relationship are identical, are not detailed at this.With pole plate 221b, 222b electricity
The excitation setting of radio frequency unit 251,252, the position relationship that connect are identical with first embodiment, at this not
Repeat.Second embodiment, compared with first embodiment, adds low frequency capacitive coupling RF generator
261, DC source 262, other are identical with first embodiment.
It addition, low frequency capacitive coupling RF generator 261 or DC source 262 can by increase etc. from
The energy of the bombardment cation in daughter, improves etch rate；Or it is attached by reducing the second electrode 24b
The kinetic energy of near bombardment cation, it is to avoid when using high frequency or hyperfrequency excitation radio-frequency power supply, plasma
The over etching to wafer that high energy bombardment cation produced by body is likely to result in, Damage Medium layer.Finally
The high uniformity of the energy density of realization cation in process cavity 28.Use the device of this embodiment,
Achieve the plasma density in process cavity 28 and the high uniformity of cation energy density, it is ensured that carve
The preferable effect of erosion uniformity.
In concrete practice, low frequency capacitive coupling RF generator can be preset as required
The frequency values of 261 or the magnitude of voltage of DC source 262；Or in etching process, regulate low frequency capacitive coupling
Close RF generator 261 frequency values or DC source 262 magnitude of voltage, with eliminate further standing wave effect or
Control the energy of bombardment cation.Wherein, the radio frequency range of low frequency capacitive coupling RF generator 261
For 2-13.67MHz, the voltage range of DC source is 0-1000V.In concrete practice, can be to low
Frequently capacitive coupling RF generator or the kind of DC source, number, frequency or voltage select.
3rd embodiment
With reference to Fig. 7, in the 3rd embodiment, the second electrode 24c includes two pole plates, respectively pole plate 241c,
Pole plate 242c, wherein, pole plate 241c electrically connects with one end of low frequency capacitive coupling RF generator 261,
The other end ground connection of low frequency capacitive coupling RF generator 261；One end of pole plate 242c and DC source 262
Electrical connection, the other end ground connection of DC source 262.
In 3rd embodiment, the shape of two pole plates, position relationship and first that the second electrode 24c includes
The shape of two pole plates of the first electrode in embodiment, position relationship are identical, are not detailed at this.It addition,
The number of the pole plate of the second electrode is also not necessarily limited to two pole plates, can be more than three and include three.First
The number of the number of the pole plate of electrode and the pole plate of the second electrode is identical, and position relationship is the most corresponding, than
As, pole plate 221c is relative with pole plate 241c, and pole plate 222c is relative with pole plate 242c.
Other structures and annexation are identical with first embodiment, do not repeat at this.
Two pole plate 221c and 222c included due to the first electrode 22c are equivalent to two independent little electricity
Pole, can produce vibration highfield respectively in process cavity 28, and the second electrode 24c also includes two pole plates,
For the second electrode is a pole plate, the control to process cavity 28 of each pole plate of the second electrode 24c
Region reduces.When wafer size is bigger, can be more targetedly by regulation low frequency capacitive coupling RF
The frequency values of generator 261, the magnitude of voltage of DC source 262, the electromagnetic wave in change process cavity 28
The direction of propagation, eliminates partially coherent, to weaken standing wave effect.
First electrode 22c, the second electrode 24c are the structure of multiple pole plate and arrange, it is possible to achieve to wafer
Subregional more equilibrium, accurate cation energy hole.Finally, obtain further high density uniform,
Large-area plasma, obtains having higher etching homogeneity and the wafer of high etching ratio.
4th embodiment
With reference to Fig. 8, in the 4th embodiment, the first electrode 22d includes pole plate 221d, pole plate 222d, respectively
Individual pole plate is respectively provided with camber structure, and its concave surface is all relative with the second electrode 24d, to the first electrode 22d
The radian of the arcuate structure of each pole plate can select as required.Other structures and annexation and the
One embodiment is identical, does not repeats at this.About the shape of each pole plate, except each pole plate is arranged to
Outside arcuate structure, other are identical with first embodiment.
In this embodiment, owing to the first electrode is arcuate structure, therefore it is incident to pole plate 221d and 222d
On electromagnetic wave and will not be propagated in opposite directions between the electromagnetic wave that sends by pole plate 221d and 222d reflection,
Will not be concerned with the most between the two, also would not produce standing wave effect.
In 4th embodiment, the second electrode 24d and the second embodiment are identical.But in the 4th embodiment, the
Two electrodes can also be identical with the 3rd embodiment, is arranged to polylith pole plate.
5th embodiment
With reference to Fig. 9, in the 5th embodiment, the second electrode 24e is arcuate structure, concave surface and the first electrode
22e is relative, and the lower cavity plate 27 of process cavity 28 is also arcuate structure, the radian of the second electrode 24e and cavity of resorption
The radian of plate 27 can be identical, it is also possible to differs, and when selecting radian identical, can make cavity of resorption plate 27
Preferably the shape with the second electrode 24e is coincide, and plays more preferable supporting role, prevents the second electrode 24e
Deform upon.Second electrode 24e electrically connects with lower cavity plate 27, described lower cavity plate 27 and low frequency capacitive coupling
Close one end electrical connection of RF generator 261 and DC source 262, low frequency capacitive coupling RF generator 261
Other end ground connection with DC source 262.If the second electrode does not electrically connects with lower cavity plate, described low frequency
One end of capacitive coupling RF generator 261 and DC source 262 electrically connects with the second electrode 24e, another
End ground connection.
The setting of described second electrode 24e arcuate structure, changes and incides the second electrode in process cavity 28
The reflection direction of the electromagnetic wave on 24e so that the incident electromagnetic wave on the second electrode 24e and the electromagnetism of reflection
Ripple will not occur parallel opposed longer sides to propagate, thus also will not occur relevant and produce standing wave, avoids the most further
Standing wave effect in process cavity 28.
Pole plate 221e, 222e of first electrode 22e and other structures are all identical with the second embodiment,
This does not repeats.
Sixth embodiment
With reference to Figure 10, in sixth embodiment, pole plate 221f and 222f constituting the first electrode 22f is arc
Structure, concave surface and the second electrode 24f of each pole plate are relative；Second electrode 24f is arcuate structure, concave surface
Relative with the first electrode 22f.Can be according to need to the radian of the arcuate structure of first electrode each pole plate of 22f
Select.Other structures and annexation are identical with the second embodiment, do not repeat at this.
The structure of this embodiment is arranged, thus it is possible to vary incide the anti-of electromagnetic wave on pole plate 221f and 222f
Penetrate direction, the electromagnetic wave direction inciding reflection on the second electrode 24f and the electromagnetism inciding in cavity wall
The reflection direction of ripple so that the incident electromagnetic wave on pole plate 221f and 222f and reflection electromagnetic wave, the second electricity
Incident electromagnetic wave in incident electromagnetic wave on the 24f of pole and reflection electromagnetic wave and cavity wall and reflection electromagnetic wave
Will not occur to propagate in opposite directions, further eliminate the standing wave effect in process cavity 28, obtain optimal quarter
Erosion uniformity.
Although the present invention is open as above with preferred embodiment, but it is not for limiting the present invention, appoints
What those skilled in the art without departing from the spirit and scope of the present invention, may be by the disclosure above
Technical solution of the present invention is made possible variation and amendment by method and technology contents, therefore, every does not takes off
From the content of technical solution of the present invention, it is any that above example is made by the technical spirit of the foundation present invention
Simple modification, equivalent variations and modification, belong to the protection domain of technical solution of the present invention.
Claims (12)
1. a plasma etching apparatus, it is characterised in that including:
Process cavity；
Being positioned at the first electrode of described process cavity, the second electrode, described first electrode and the second electrode are relative
Placing, described first electrode is positioned at the top of described process cavity and includes at least two pieces of pole plates；Described first
Space is left between the neighboring edge of each pole plate of electrode；
Excitation radio frequency unit, the number of excitation radio frequency unit is equal with the number of pole plate, each of the first electrode
Pole plate electrically connects one to one with each excitation radio frequency unit, and described excitation radio frequency unit is for by the first electricity
Each pole plate of pole etching gas in process cavity provides excitation energy；
Bias supply, electrically connects with described second electrode；
Described second electrode includes at least two pieces of pole plates, the pole plate number of the second electrode and the pole plate of the first electrode
Number is identical, and the pole plate of the first electrode and the pole plate of the second electrode are the most relative in process cavity；
The number of described bias supply is equal with the number of the pole plate of described second electrode, each of the second electrode
Pole plate electrically connects one to one with each bias supply.
Plasma etching apparatus the most according to claim 1, it is characterised in that described first electrode every
Block pole plate is closed ring structure, is arranged by ring set mode between each pole plate of the first electrode.
Plasma etching apparatus the most according to claim 2, it is characterised in that described enclosed annular is tied
Structure is straight-flanked ring structure or cirque structure.
Plasma etching apparatus the most according to claim 1, it is characterised in that described first electrode includes
One piece of plane pole plate, and at least one piece of enclosed annular pole plate, each pole plate of the first electrode passes through ring set
Mode arranges, and described enclosed annular pole plate surrounds plane pole plate.
Plasma etching apparatus the most according to claim 1, it is characterised in that described first electrode each
Individual pole plate is arcuate structure, and its concave surface and the second electrode are relative；
Or, described second electrode is arcuate structure, and its concave surface and the first electrode are relative；
Or, each pole plate of described first electrode and the second electrode are arcuate structure, described first electrode
The concave surface of each pole plate and the second electrode relative, concave surface and first electrode of described second electrode are relative.
Plasma etching apparatus the most according to claim 1, it is characterised in that described second electrode each
Space is left between the neighboring edge of individual pole plate.
Plasma etching apparatus the most according to claim 1, it is characterised in that described second electrode every
Block pole plate is closed ring structure, is arranged by ring set mode between each pole plate of the second electrode.
Plasma etching apparatus the most according to claim 7, it is characterised in that described second electrode each
The closed ring structure of individual pole plate is straight-flanked ring structure or cirque structure.
Plasma etching apparatus the most according to claim 1, it is characterised in that described second electrode includes
One piece of plane pole plate and at least one piece of enclosed annular pole plate, all pole plates of the second electrode pass through ring set side
Formula arranges, and the enclosed annular pole plate of the second electrode surrounds plane pole plate.
Plasma etching apparatus the most according to claim 1, it is characterised in that described second electrode
Each pole plate is arcuate structure, and concave surface and the first electrode are relative.
11. plasma etching apparatus according to claim 1, it is characterised in that described bias supply bag
Include: low frequency capacitive coupling radio-frequency signal generator or DC source, or include that low frequency capacitive coupling radio frequency occurs
Device and DC source.
12. plasma etching apparatus according to claim 1, it is characterised in that each excitation described is penetrated
Frequently unit includes: high frequency capacitive coupled RF generator, or the inductive coupled radio-frequency signal generator of high frequency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210214130.6A CN103515178B (en) | 2012-06-26 | Plasma etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210214130.6A CN103515178B (en) | 2012-06-26 | Plasma etching apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103515178A CN103515178A (en) | 2014-01-15 |
| CN103515178B true CN103515178B (en) | 2016-11-30 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6007672A (en) * | 1996-04-22 | 1999-12-28 | Nisshinbo Industries, Inc. | Electrode for plasma etching |
| CN101552186A (en) * | 2008-03-31 | 2009-10-07 | 东京毅力科创株式会社 | Plasma etching method and computer readable storage medium |
| CN101974739A (en) * | 2010-11-19 | 2011-02-16 | 理想能源设备有限公司 | Plasma-enhanced chemical vapor deposition device |
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6007672A (en) * | 1996-04-22 | 1999-12-28 | Nisshinbo Industries, Inc. | Electrode for plasma etching |
| CN101552186A (en) * | 2008-03-31 | 2009-10-07 | 东京毅力科创株式会社 | Plasma etching method and computer readable storage medium |
| CN101974739A (en) * | 2010-11-19 | 2011-02-16 | 理想能源设备有限公司 | Plasma-enhanced chemical vapor deposition device |
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