CN103177920B - With the etching device of rectangular-shaped inductor coupling coil - Google Patents
With the etching device of rectangular-shaped inductor coupling coil Download PDFInfo
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- CN103177920B CN103177920B CN201110443196.8A CN201110443196A CN103177920B CN 103177920 B CN103177920 B CN 103177920B CN 201110443196 A CN201110443196 A CN 201110443196A CN 103177920 B CN103177920 B CN 103177920B
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Abstract
The invention provides a kind of plasma etching apparatus, comprise: etch chamber, induction coil, air extractor, electrostatic chuck, electric pole plate and lower electrode plate, described induction coil and electric pole plate are positioned at described etch chamber top, described battery lead plate is positioned at described etch chamber bottom, lower electrode plate is positioned at electrostatic chuck inside, it is characterized in that described induction coil is rectangle.Described induction coil is rectangle, and length-width ratio is preferably 2: 1.In etching process, conventional helix coil is replaced with the square coil that can produce uniform induction Electric Field Distribution, the distribution of gas of crystal circle center region and fringe region and the difference of etching environment can be reduced, improve the etching homogeneity of crystal column surface, improve the yields of semiconductor device, and the reaction cavity of rectangle can etch two wafer, substantially increases etching device disposal ability simultaneously, thus improve the production efficiency of semiconductor device manufacture.
Description
Technical field
The present invention relates to field of semiconductor manufacture, specifically, relate to a kind of etching device with rectangular-shaped inductor coupling coil.
Background technology
Along with the extensive use of electronic equipment, the manufacturing process of semiconductor obtains development at full speed.The manufacturing process of semiconductor relates to two kinds of basic etching technics: dry etching and wet etching.Wherein, dry etching is that wafer is exposed in the plasma that etching gas produces, plasma and wafer generation physical-chemical reaction, thus optionally removes unwanted material from crystal column surface.At present, the dry etching that circuit diagram can be made to become meticulousr is used more and more widely.Along with the process of integrated circuit is to structural development more subtly, higher technical requirement is proposed to processing technology.But, when the machinable wafer size of industry develops into 18 inches from 12 inches, the uniformity of etching becomes the significant challenge of etching technics, it can affect the service behaviour of the gate circuit finally obtained to a great extent, is therefore all striving to find the method improving etching homogeneity during each integrated circuit fabrication process.。
As shown in Figure 1, be the sectional structure chart of dry etching device in prior art 100.On inductance coil 102, apply alternating current by AC power 101, thus generate an electromagnetic field around inductance coil 102.Then etching gas is passed into etching device from nozzle 103, etching gas occurs ionize and form plasma under the effect of electromagnetic field, top crown 104 applies voltage by DC power supply 106, and for placing the electrostatic chuck ground connection of wafer, so just make to exist between wafer W and plasma a larger voltage difference, thus make the plasma moved towards wafer W have directivity.Air extractor vacuum pump 107 is arranged at the bottom of etch chamber 105, usual crystal round fringes region is more Zao than the gas of central area to be taken away, the etching environment of crystal round fringes is caused more to be different from crystal circle center, even if carry out etching gas to regulate the etching environment being also difficult to adjust subtly crystal extreme edge.
Fig. 2 is the vertical view of inductance-coupled coil 102 in prior art, be generally helical form, the part electromagnetic field that excites in centre is stronger in the reactor chamber for this inductance-coupled coil, and the electromagnetic field that marginal portion excites is more weak, therefore reative cell middle body plasma density is higher, and marginal portion plasma density is lower, particularly the processing dimension of wafer is from developing into 450mm, the volume of reaction chamber is also after corresponding increase, and the plasma that planar spiral inductively-coupled coil excites exists very large azimuthal asymmetry.
Due in etching process, crystal circle center region and fringe region have distribution of gas uneven, there is the situations such as etching environmental difference, appearance center is to the loading effect at edge, thus make crystal circle center region make speed different with the etching in crystal round fringes region, cause the etching heterogeneity of crystal column surface, the through hole causing crystal round fringes region and central area to be formed or other device size heterogeneities, particularly evident in the extreme edge part of wafer, reduce the yields of semiconductor device.In the wafer fabrication processes of 12 inches, the uniformity of crystal round fringes has been difficult to control well, and for the wafer of 18 inches, homogeneity question is more serious.
Summary of the invention
In summary of the invention part, introduce the concept of a series of reduced form, this will further describe in embodiment part.Summary of the invention part of the present invention does not also mean that the key feature and essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection range attempting to determine technical scheme required for protection.
In order to solve the problem, the invention provides a kind of etching device that can improve wafer etching homogeneity, its technical scheme is specific as follows.
The present invention provides a kind of plasma etching apparatus in one embodiment, comprise: etch chamber, induction coil, electric pole plate and lower electrode plate, described induction coil and electric pole plate are positioned at described etch chamber top, described battery lead plate is positioned at described etch chamber bottom, it is characterized in that described induction coil be rectangular aspect ratio is preferably 2: 1.Preferably, described induction coil comprises: first group of induction coil and second group of induction coil, alternating current in described first group of induction coil and described second group of induction coil is anti-phase each other, described first group of induction coil and described second group of induction coil height in vertical direction regulate respectively, and the scope of adjustment is-5cm to+5cm.Preferably, described first group of induction coil with described second group of induction coil loads respectively one to the different alternating current of three frequencies, the ac frequency scope that described first group of induction coil and described second group of induction coil load is 2MHz-160MHz.The quantity of the lower electrode plate of described plasma etching apparatus is two, the current potential of described electric pole plate and described two bottom crowns carries out adjusting and controlling respectively, and the loading of described electric pole plate and described two bottom crowns adds direct current to increase the energy density of plasma.
Visible, in the present invention, have employed one makes piezomagnetic theory uniformity good, efficiency is high, and be suitable for inductance-coupled coil and the inductively coupled plasma etching device of large area processing, in etching process, the technological means such as conventional helix coil are replaced with the square coil that can produce uniform induction Electric Field Distribution, reduction crystal circle center region and fringe region have the difference of distribution of gas and etching environment, and then make the etching in crystal circle center region and crystal round fringes region make speed more homogeneous, improve the etching homogeneity of crystal column surface, improve the yields of semiconductor device, and the reaction cavity that length-width ratio is 2: 1 can etch two wafer simultaneously, can greatly improve etching device disposal ability, thus improve the production efficiency of equipment for making semiconductor device.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining principle of the present invention.In the accompanying drawings,
Fig. 1 is the sectional structure chart of etching device in prior art;
Fig. 2 is the vertical view of inductive coupler coils in prior art;
Fig. 3 is the inductance-coupled coil be made up of two groups of square coils provided by the present invention;
Fig. 4 is the profile structure chart of the etching device using rectangular-shaped inductor coupling coil provided by the present invention.
Embodiment
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.But, it will be apparent to one skilled in the art that the present invention can be implemented without the need to these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
In order to thoroughly understand the present invention, by following description, specific embodiment is proposed, to illustrate how the present invention improves problems of the prior art.Obviously, the specific details that the technical staff that enforcement of the present invention is not limited to semiconductor applications has the knack of.Preferred embodiment of the present invention is described in detail as follows, but except these are described in detail, the present invention can also have other execution modes.
Fig. 3 shows a kind of inductance-coupled coil 300 be made up of two groups of square coils 301 and 302 according to one embodiment of present invention, and wherein, the alternating current in first group of square coil 301 and second group of square coil 302 is anti-phase each other.Due to spiral inductor coupling coil single in traditional approach, induced field and electric field can be wavy distribution along the direction of parallel induction coil in reaction chamber, cause the induction field skewness in etch chamber.Therefore in the present embodiment, the square coil 301 and 302 that we adopt two groups of electric currents anti-phase each other, can eliminate the wavy distribution of induction field, to obtain the uniformity of better induction plasma.And, in prior art, inductive coupler coils is generally helical form, the part electromagnetic field that excites in centre is stronger in the reactor chamber for this inductance-coupled coil, and the electromagnetic field that marginal portion excites is more weak, therefore reative cell middle body plasma density is higher, and marginal portion plasma density is lower, particularly the processing dimension of wafer is from developing into 450mm, the volume of reaction chamber is also after corresponding increase, and the plasma that planar spiral inductively-coupled coil excites exists very large azimuthal asymmetry.As shown in Figure 3, inductance-coupled coil 300 in the present invention and the etch chamber 105 at its place are rectangle, length-width ratio is preferably 2: 1, and the bottom of etch chamber 305 is provided with two electrostatic chucks 303 and 304 for placing two wafers respectively, the difference that crystal circle center region and fringe region have distribution of gas and etching environment can be reduced in this way, and then make the etching in crystal circle center region and crystal round fringes region make speed more homogeneous, improve the etching homogeneity of crystal column surface.In addition, first group of square coil 301 of inductance-coupled coil 300 and the locus of second group of square coil 302 can be planar structure, also can be stereochemical structure, namely each coil height in vertical direction can regulate respectively, the adjustable range of vertical height is preferably-5cm-+5cm, thus controls the uniformity of plasma distribution further.
As shown in Figure 4, according to a preferred embodiment of the present invention, show the profile structure chart of the rectangle plasma etching apparatus 400 using rectangular-shaped inductor coupling coil group 300 provided by the present invention, the length-width ratio of described rectangle plasma etching apparatus 400 is preferably 2: 1.Wherein, AC power 401 and AC power 402 are respectively first group of square coil 301 and second group of square coil 302 provides alternating current anti-phase each other, each coil height in vertical direction of inductance-coupled coil 300 can regulate as illustrated in fig. 4 respectively, obtains the controllability of better homogeneous plasma with this.Etch chamber bottom is provided with two electrostatic chucks 403 and 404 for placing two wafers respectively.In etching process, on first group of square coil 301 and second group of square coil 302, apply anti-phase alternating current respectively by AC power 401 and AC power 402, thus around inductance-coupled coil 300 the comparatively uniform electromagnetic field of generation.Then etching gas is passed into etching device from nozzle 103, and etching gas occurs ionize and form plasma under the effect of electromagnetic field, by regulating each coil height in vertical direction, controls the uniformity of plasma distribution further.Top crown 104 applies voltage by DC power supply 106, and electrostatic chuck 403 and 404 ground connection simultaneously for placing wafer, so just make between wafer W and plasma, to there is a voltage difference, thus make the plasma moved towards wafer W have directivity.Air extractor vacuum pump 405 is positioned at the centre position of two electrostatic chucks 403 and 404, when etching two wafers on electrostatic chuck 403 and 404 simultaneously, the etching environmental difference of two wafer periphery can be made less, improves the uniformity of etching technics.
According to a preferred embodiment of the present invention, on the electric pole plate 104 of the plasma etching apparatus 400 in Fig. 4 load direct voltage and two electrostatic disks in bottom crown current potential can regulate respectively as required, to control the energy density of plasma better.And, the AC power be carried in the present embodiment on first group of square coil 301 of induction coil 300 and second group of square coil 302 can be respectively multifrequency source, namely often organize and induction coil can load respectively one to the different alternating current of three frequencies, the frequency range of the alternating current of described different frequency is preferably 2MHz-160MHz.Because the energy of plasma mainly relies on low frequency ac, and high-frequency alternating current plasma Effects of Density is greater than the impact on ion energy, therefore, is combined by the alternating current of different frequency and can control ion energy and ion concentration better.In addition, different frequencies also can make plasma in etching process physical bombardment effect more obviously or chemical etching effect more obvious, ionize various particle better, less plasma damage, improve the quality of processed wafer.
In sum, in the present invention, have employed a kind of piezomagnetic theory uniformity good, efficiency is high, and be suitable for inductance-coupled coil and the inductively coupled plasma etching device of large area processing, in etching process, the technological means such as conventional helix coil are replaced with the square coil that can produce Uniform Electromagnetic Field distribution, reduction crystal circle center region and fringe region have the difference of distribution of gas and etching environment, and then make the etching in crystal circle center region and crystal round fringes region make speed more homogeneous, improve the etching homogeneity of crystal column surface, improve the yields of semiconductor device, and the reaction cavity of rectangle can etch two wafer simultaneously, can greatly improve etching device disposal ability, thus improve semiconductor device production efficiency.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.
Claims (9)
1. a plasma etching apparatus, comprise: etch chamber, induction coil, air extractor, electrostatic chuck, electric pole plate and lower electrode plate, described induction coil and electric pole plate are positioned at described etch chamber top, described lower electrode plate is positioned at described etch chamber bottom, lower electrode plate is positioned at electrostatic chuck inside, it is characterized in that described etch chamber and induction coil are rectangle, the quantity of described lower electrode plate is two, lay respectively at two electrostatic chuck inside, described air extractor is positioned at the centre of two electrostatic chucks.
2. etching device as claimed in claim 1, it is characterized in that, described induction coil comprises first group of induction coil and second group of induction coil, and the alternating current in described first group of induction coil and described second group of induction coil is anti-phase each other.
3. etching device as claimed in claim 2, it is characterized in that, described first group of induction coil and described second group of induction coil height in vertical direction regulate respectively.
4. etching device as claimed in claim 3, is characterized in that, the scope that described first group of induction coil and described second group of induction coil height in vertical direction carry out regulating respectively is-5cm to+5cm.
5. etching device as claimed in claim 1, the length-width ratio of described induction coil is 2:1.
6. etching device as claimed in claim 2, is characterized in that, described first group of induction coil with described second group of induction coil loads respectively one to the different alternating current of three frequencies.
7. etching device as claimed in claim 6, is characterized in that, the ac frequency scope that described first group of induction coil and described second group of induction coil load is 2MHz-160MHz.
8. etching device as claimed in claim 1, it is characterized in that, the current potential of described electric pole plate and described two lower electrode plates carries out adjusting and controlling respectively.
9. etching device as claimed in claim 8, is characterized in that, loads additional direct current to increase the energy density of plasma at described electric pole plate and described two lower electrode plates.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110443196.8A CN103177920B (en) | 2011-12-26 | 2011-12-26 | With the etching device of rectangular-shaped inductor coupling coil |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110443196.8A CN103177920B (en) | 2011-12-26 | 2011-12-26 | With the etching device of rectangular-shaped inductor coupling coil |
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| CN103177920A CN103177920A (en) | 2013-06-26 |
| CN103177920B true CN103177920B (en) | 2016-03-16 |
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| CN103913876B (en) * | 2014-03-17 | 2017-07-04 | 京东方科技集团股份有限公司 | A kind of bogey and dry etching device for dry etching |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4361733A (en) * | 1979-05-21 | 1982-11-30 | Rion Kabushiki Kaisha | Hard-of-hearing aid appliance |
| CN1587023A (en) * | 2004-09-30 | 2005-03-02 | 清华大学 | Micro liquid drop driver based on power-on wetting of medium layer |
| CN2785105Y (en) * | 2005-01-27 | 2006-05-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and its inductance coupling plasma equipment |
| CN101465189A (en) * | 2007-12-17 | 2009-06-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and plasma device |
| CN101920256A (en) * | 2009-06-12 | 2010-12-22 | 东京毅力科创株式会社 | The consumable part that plasma processing apparatus is used utilize method again |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4361733A (en) * | 1979-05-21 | 1982-11-30 | Rion Kabushiki Kaisha | Hard-of-hearing aid appliance |
| CN1587023A (en) * | 2004-09-30 | 2005-03-02 | 清华大学 | Micro liquid drop driver based on power-on wetting of medium layer |
| CN2785105Y (en) * | 2005-01-27 | 2006-05-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and its inductance coupling plasma equipment |
| CN101465189A (en) * | 2007-12-17 | 2009-06-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and plasma device |
| CN101920256A (en) * | 2009-06-12 | 2010-12-22 | 东京毅力科创株式会社 | The consumable part that plasma processing apparatus is used utilize method again |
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