CN103177920A - Etching device with rectangular inductive coupling coil - Google Patents
Etching device with rectangular inductive coupling coil Download PDFInfo
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- CN103177920A CN103177920A CN2011104431968A CN201110443196A CN103177920A CN 103177920 A CN103177920 A CN 103177920A CN 2011104431968 A CN2011104431968 A CN 2011104431968A CN 201110443196 A CN201110443196 A CN 201110443196A CN 103177920 A CN103177920 A CN 103177920A
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Abstract
The invention provides a plasma etching device which comprises an etching cavity, an induction coil, an exhaust device, an electrostatic sucker, an upper electrode plate, and a lower electrode plate. The induction coil and the upper electrode plate are located on the upper portion of the etching cavity. The lower electrode plate is located on the lower portion of the etching cavity and inside the electrostatic sucker. The plasma etching device is characterized in that the induction coil is rectangular. The rectangular induction coil is 2/1 in length/width ratio preferably. The conventional spiral coil is replaced with the rectangular coil which is capable of generating even induction electric field during etching, the difference between gas distribution and etching environment in a central area and a marginal area of a wafer can be decreased, uniformity in etching the surface of the wafer is improved, yield of semiconductor devices is increased, two wafers can be etched simultaneously by the rectangular reaction cavity, handling capacity of the etching device is improved greatly, and efficiency of producing the semiconductor devices is improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, specifically, relate to a kind of etching device with the rectangle inductance-coupled coil.
Background technology
Along with the extensive use of electronic equipment, semi-conductive manufacturing process has obtained development at full speed.Semi-conductive manufacturing process relates to two kinds of basic etching technics: dry etching and wet etching.Wherein, dry etching is that wafer is exposed in the plasma that etching gas produces, plasma and wafer generation physical-chemical reaction, thus optionally remove unwanted material from crystal column surface.The dry etching that at present, can make circuit diagram become meticulousr is used more and more widely.To structural development more subtly, higher specification requirement has been proposed along with the process of integrated circuit for processing technology.Yet, when the machinable wafer size of industry develops into 18 inches from 12 inches, the uniformity of etching becomes the significant challenge of etching technics, its can be to a great extent the service behaviour of the gate circuit that finally obtains of impact, so all striving to find the method that improves etching homogeneity during each integrated circuit fabrication process.。
As shown in Figure 1, be the sectional structure chart of dry etching device in prior art 100.Apply alternating current by AC power 101 on inductance coil 102, thereby generate an electromagnetic field around inductance coil 102.Then etching gas is passed into etching device from nozzle 103, plasma occurs to ionize and form in etching gas under the effect of electromagnetic field, apply voltage by DC power supply 106 on top crown 104, and be used for the electrostatic chuck ground connection of placing wafer, so just make to have a larger voltage difference between wafer W and plasma, have directivity thereby make towards the plasma of wafer W motion.Air extractor vacuum pump 107 is arranged at the bottom of etch chamber 105, usually the crystal round fringes zone is than the gas of central area Zao taking away more, cause the etching environment of crystal round fringes more to be different from crystal circle center, regulate even carry out etching gas the etching environment that also is difficult to adjust subtly the crystal extreme edge.
Fig. 2 is the vertical view of inductance-coupled coil 102 in prior art, be generally helical form, this inductance-coupled coil is stronger at the electromagnetic field that the reaction chamber middle body excites, and the electromagnetic field that the marginal portion excites a little less than, therefore reative cell middle body plasma density is higher, and the marginal portion plasma density is lower, particularly the processing dimension of wafer is from developing into 450mm, also after corresponding increase, there is very large azimuthal asymmetry in the plasma that the planar spiral inductor coupling coil excites to the volume of reaction chamber.
Due in etching process, crystal circle center zone and fringe region have distribution of gas inhomogeneous, there are the situations such as etching environmental difference, the appearance center is to the loading effect at edge, thereby make the etching in crystal circle center zone and crystal round fringes zone make speed different, cause the etching heterogeneity of crystal column surface, cause through hole or other device size heterogeneities of crystal round fringes zone and central area formation, extreme edge part at wafer is particularly evident, has reduced the yields of semiconductor device.In the wafer fabrication processes of 12 inches, the uniformity of crystal round fringes has been difficult to control well, and for the wafer of 18 inches, homogeneity question is more serious.
Summary of the invention
Introduced the concept of a series of reduced forms in the summary of the invention part, this will further describe in the embodiment part.Summary of the invention part of the present invention does not also mean that key feature and the essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection range of attempting to determine technical scheme required for protection.
In order to address the above problem, the invention provides a kind of etching device that can improve the wafer etching homogeneity, its technical scheme is specific as follows.
The present invention provides a kind of plasma etching apparatus in one embodiment, comprise: etch chamber, induction coil, electric pole plate and lower electrode plate, described induction coil and electric pole plate are positioned at described etch chamber top, described battery lead plate is positioned at described etch chamber bottom, it is characterized in that described induction coil be that rectangular aspect ratio is preferably is 2: 1.Preferably, described induction coil comprises: first group of induction coil and second group of induction coil, alternating current in described first group of induction coil and described second group of induction coil is anti-phase each other, described first group of induction coil and described second group of induction coil height are in vertical direction regulated respectively, and the scope of adjusting is-and 5cm is to+5cm.Preferably, load respectively one to three alternating current that frequency is different on described first group of induction coil and described second group of induction coil, the ac frequency scope that loads on described first group of induction coil and described second group of induction coil is 2MHz-160MHz.The quantity of the lower electrode plate of described plasma etching apparatus is two, the current potential of described electric pole plate and described two bottom crowns is adjusted respectively and controls, and the additional direct current of the loading of described electric pole plate and described two bottom crowns is to increase the energy density of plasma.
as seen, in the present invention, adopted a kind of induction field distributing homogeneity that makes good, efficient is high, and be suitable for inductance-coupled coil and the inductively coupled plasma etching device of large tracts of land processing, in etching process, replace the conventional technological means such as helix coil with the square coil that can produce the uniform induction Electric Field Distribution, reducing crystal circle center zone and fringe region has the difference of distribution of gas and etching environment, and then make the etching in crystal circle center zone and crystal round fringes zone make more homogeneous of speed, improve the etching homogeneity of crystal column surface, improved the yields of semiconductor device, and length-width ratio is that the reaction cavity of 2: 1 can carry out etching to two wafer simultaneously, can greatly improve the etching device disposal ability, thereby improve the production efficiency of equipment for making semiconductor device.
Description of drawings
Following accompanying drawing of the present invention is used for understanding the present invention at this as a part of the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining principle of the present invention.In the accompanying drawings,
Fig. 1 is the sectional structure chart of etching device in prior art;
Fig. 2 is the vertical view of inductive coupler coils in prior art;
Fig. 3 is the inductance-coupled coil that is comprised of two groups of square coils provided by the present invention;
Fig. 4 is the profile structure chart of the etching device of use rectangle inductance-coupled coil provided by the present invention.
Embodiment
In the following description, a large amount of concrete details have been provided in order to more thorough understanding of the invention is provided.Yet, it will be apparent to one skilled in the art that the present invention can need not one or more these details and be implemented.In other example, for fear of obscuring with the present invention, be not described for technical characterictics more well known in the art.
In order thoroughly to understand the present invention, will in following description, specific embodiment be proposed, so that how explanation the present invention improves problems of the prior art.Obviously, enforcement of the present invention is not limited to the specific details that the technical staff of semiconductor applications has the knack of.Preferred embodiment of the present invention is described in detail as follows, yet except these were described in detail, the present invention can also have other execution modes.
Fig. 3 shows a kind of by two groups of square coils 301 and 302 inductance-coupled coils that form 300 according to one embodiment of present invention, and wherein, the alternating current in first group of square coil 301 and second group of square coil 302 is anti-phase each other.Due to spiral inductor coupling coil single in traditional approach, induced field can be wavy distribution with electric field along the direction of parallel induction coil in reaction chamber, cause the induction field skewness in etch chamber.Therefore in the present embodiment, we adopt two groups of electric currents anti-phase square coil 301 and 302 each other, can eliminate the wavy distribution of induction field, to obtain the uniformity of better induction plasma.And, in prior art, inductive coupler coils is generally helical form, this inductance-coupled coil is stronger at the electromagnetic field that the reaction chamber middle body excites, and the electromagnetic field that the marginal portion excites a little less than, therefore reative cell middle body plasma density is higher, and the marginal portion plasma density is lower, particularly the processing dimension of wafer is from developing into 450mm, also after corresponding increase, there is very large azimuthal asymmetry in the plasma that the planar spiral inductor coupling coil excites to the volume of reaction chamber.As shown in Figure 3, inductance-coupled coil 300 in the present invention with and the etch chamber 105 at place be rectangle, length-width ratio is preferably 2: 1, and the bottom of etch chamber 305 is provided with two electrostatic chucks 303 and 304 for placing respectively two wafers, can reduce in this way crystal circle center zone and fringe region has the difference of distribution of gas and etching environment, and then make the etching in crystal circle center zone and crystal round fringes zone make more homogeneous of speed, the etching homogeneity of raising crystal column surface.In addition, first group of square coil 301 of inductance-coupled coil 300 and the locus of second group of square coil 302 can be planar structure, also can be stereochemical structure, be that each coil height in vertical direction can be regulated respectively, the adjustable range of vertical height is preferably-5cm-+5cm, thereby further controls the uniformity that plasma distributes.
As shown in Figure 4, according to a preferred embodiment of the present invention, show the profile structure chart of the rectangle plasma etching apparatus 400 that uses rectangle inductance-coupled coil group 300 provided by the present invention, the length-width ratio of described rectangle plasma etching apparatus 400 is preferably 2: 1.Wherein, AC power 401 and AC power 402 are respectively first group of square coil 301 and second group of square coil 302 anti-phase each other alternating current are provided, each coil height in vertical direction of inductance-coupled coil 300 can be regulated respectively as illustrated in fig. 4, obtains the controllability of better homogeneous plasma with this.The etch chamber bottom is provided with two electrostatic chucks 403 and 404 and is used for placing respectively two wafers.In etching process, apply anti-phase alternating current respectively on first group of square coil 301 and second group of square coil 302 by AC power 401 and AC power 402, thereby produce electromagnetic field comparatively uniformly around inductance-coupled coil 300.Then etching gas is passed into etching device from nozzle 103, and plasma occurs to ionize and form under the effect of electromagnetic field etching gas, by regulating each coil height in vertical direction, further controls the uniformity that plasma distributes.Apply voltage by DC power supply 106 on top crown 104, and the electrostatic chuck 403 and 404 that is used for placing wafer ground connection simultaneously, so just make to have a voltage difference between wafer W and plasma, have directivity thereby make towards the plasma of wafer W motion.Air extractor vacuum pump 405 is positioned at the centre position of two electrostatic chucks 403 and 404, when two wafers on while etching electrostatic chuck 403 and 404, can make the etching environmental difference of two wafer periphery less, improves the uniformity of etching technics.
According to a preferred embodiment of the present invention, bottom crown current potential in the direct voltage that loads on the electric pole plate 104 of the plasma etching apparatus 400 in Fig. 4 and two electrostatic disks can be regulated respectively as required, to control better the energy density of plasma.And, be carried in first group of square coil 301 of induction coil 300 and the AC power on second group of square coil 302 in the present embodiment and can be the multifrequency source of being respectively, be to load respectively one to three alternating current that frequency is different on every group of induction coil, the frequency range of the alternating current of described different frequency is preferably 2MHz-160MHz.Because the energy of plasma mainly relies on low frequency ac, and high-frequency alternating current plasma Effects of Density is greater than the impact on ion energy, therefore, the alternating current of different frequency combined can control better ion energy and ion concentration.In addition, different frequencies can make also that plasma physical bombardment effect in etching process is more obvious or the chemical etching effect is more obvious, ionizes better various particles, and less plasma damage improves the quality of processed wafer.
in sum, in the present invention, adopted a kind of induction field distributing homogeneity good, efficient is high, and be suitable for inductance-coupled coil and the inductively coupled plasma etching device of large tracts of land processing, in etching process, replace the conventional technological means such as helix coil with the square coil that can produce the Uniform Electromagnetic Field distribution, reducing crystal circle center zone and fringe region has the difference of distribution of gas and etching environment, and then make the etching in crystal circle center zone and crystal round fringes zone make more homogeneous of speed, improve the etching homogeneity of crystal column surface, improved the yields of semiconductor device, and the reaction cavity of rectangle can carry out etching to two wafer simultaneously, can greatly improve the etching device disposal ability, thereby improve semiconductor device production efficiency.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just is used for for example and the purpose of explanation, but not is intended to the present invention is limited in described scope of embodiments.It will be appreciated by persons skilled in the art that in addition the present invention is not limited to above-described embodiment, can also make more kinds of variants and modifications according to instruction of the present invention, these variants and modifications all drop in the present invention's scope required for protection.Protection scope of the present invention is defined by the appended claims and equivalent scope thereof.
Claims (10)
1. plasma etching apparatus, comprise: etch chamber, induction coil, air extractor, electrostatic chuck, electric pole plate and lower electrode plate, described induction coil and electric pole plate are positioned at described etch chamber top, described battery lead plate is positioned at described etch chamber bottom, lower electrode plate is positioned at electrostatic chuck inside, it is characterized in that described induction coil is rectangle.
2. etching device as claimed in claim 1, is characterized in that, described induction coil comprises first group of induction coil and second group of induction coil, and the alternating current in described first group of induction coil and described second group of induction coil is anti-phase each other.
3. etching device as claimed in claim 2, is characterized in that, described first group of induction coil and described second group of induction coil height are in vertical direction regulated respectively.
4. etching device as claimed in claim 3, is characterized in that, the scope that described first group of induction coil and described second group of induction coil height are in vertical direction regulated respectively for-5cm to+5cm.
5. etching device as claimed in claim 1, the length-width ratio of described induction coil is 2: 1.
6. etching device as claimed in claim 2, is characterized in that, loads respectively one to three alternating current that frequency is different on described first group of induction coil and described second group of induction coil.
7. etching device as claimed in claim 6, is characterized in that, the ac frequency scope that loads on described first group of induction coil and described second group of induction coil is 2MHz-160MHz.
8. etching device as described in any one in claim 1 to 7, is characterized in that, the quantity of described lower electrode plate is two, lays respectively at two electrostatic chuck inside, and described air extractor is positioned at the centre of two electrostatic chucks.
9. etching device as claimed in claim 8, is characterized in that, the current potential of described electric pole plate and described two bottom crowns is adjusted respectively and controls.
10. etching device as claimed in claim 9, is characterized in that, loads additional direct current to increase the energy density of plasma at described electric pole plate and described two bottom crowns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110443196.8A CN103177920B (en) | 2011-12-26 | 2011-12-26 | With the etching device of rectangular-shaped inductor coupling coil |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110443196.8A CN103177920B (en) | 2011-12-26 | 2011-12-26 | With the etching device of rectangular-shaped inductor coupling coil |
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| Publication Number | Publication Date |
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| CN103177920A true CN103177920A (en) | 2013-06-26 |
| CN103177920B CN103177920B (en) | 2016-03-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201110443196.8A Active CN103177920B (en) | 2011-12-26 | 2011-12-26 | With the etching device of rectangular-shaped inductor coupling coil |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103913876A (en) * | 2014-03-17 | 2014-07-09 | 京东方科技集团股份有限公司 | Dry etching carrying device and dry etching device |
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| US4361733A (en) * | 1979-05-21 | 1982-11-30 | Rion Kabushiki Kaisha | Hard-of-hearing aid appliance |
| CN1587023A (en) * | 2004-09-30 | 2005-03-02 | 清华大学 | Micro liquid drop driver based on power-on wetting of medium layer |
| CN2785105Y (en) * | 2005-01-27 | 2006-05-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and its inductance coupling plasma equipment |
| CN101465189A (en) * | 2007-12-17 | 2009-06-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and plasma device |
| CN101920256A (en) * | 2009-06-12 | 2010-12-22 | 东京毅力科创株式会社 | The consumable part that plasma processing apparatus is used utilize method again |
-
2011
- 2011-12-26 CN CN201110443196.8A patent/CN103177920B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4361733A (en) * | 1979-05-21 | 1982-11-30 | Rion Kabushiki Kaisha | Hard-of-hearing aid appliance |
| CN1587023A (en) * | 2004-09-30 | 2005-03-02 | 清华大学 | Micro liquid drop driver based on power-on wetting of medium layer |
| CN2785105Y (en) * | 2005-01-27 | 2006-05-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and its inductance coupling plasma equipment |
| CN101465189A (en) * | 2007-12-17 | 2009-06-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and plasma device |
| CN101920256A (en) * | 2009-06-12 | 2010-12-22 | 东京毅力科创株式会社 | The consumable part that plasma processing apparatus is used utilize method again |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103913876A (en) * | 2014-03-17 | 2014-07-09 | 京东方科技集团股份有限公司 | Dry etching carrying device and dry etching device |
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| CN103177920B (en) | 2016-03-16 |
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