CN1035143C - 复合热释电薄膜 - Google Patents
复合热释电薄膜 Download PDFInfo
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- CN1035143C CN1035143C CN95102338A CN95102338A CN1035143C CN 1035143 C CN1035143 C CN 1035143C CN 95102338 A CN95102338 A CN 95102338A CN 95102338 A CN95102338 A CN 95102338A CN 1035143 C CN1035143 C CN 1035143C
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Abstract
本发明公开一种用于制备红外探测器的复合热释电薄膜。它包括基底、热释电薄膜以及热释电薄膜上下两面都各有一层的电极膜层；本发明在热释电薄膜和基底之间加入一层低热导率的二氧化硅多孔绝热膜层。热释电薄膜和多孔绝热膜层之间增加了一层均匀致密的二氧化硅过渡膜层。本发明有效减小热流从热释电薄膜向基底的散失，从而提高薄膜红外探测器的性能。它具有较高的机械强度，并适合于制备集成热成像阵列探测器。
Description
本发明涉及一种用于制备热释电红外探测器的复合热释电薄膜。
目前，广泛使用的热释电红外探测器几乎都是用单晶或陶瓷体材料制成的。体材料通常要通过机械研磨减薄到几十微米厚，机械加工困难，而且成本高。同时这种探测器的响应速度慢，尤其是难以集成化。克服以上缺点的有效途径是将体材料薄膜化。热释电薄膜的厚度一般在0.1微米到几微米之间，自身的机械强度较差，需要附着在作为支撑材料的基底上，如在单晶硅片、氧化镁或氧化铝上。这些基底材料的热导率一般较大，造成红外辐射在热释电薄膜上产生的温升由于热流从热释电薄膜向基底的迅速散失而减小，使得薄膜探测器的灵敏度大大下降，以至于无法实用化。TakayamaR.[J.Appl.phys.，VOL.61，p.411(1987)]等人采用腐蚀法去掉位于热释电薄膜探测部分下面基底的方法，解决热流从热释电薄膜向基底的散失严重，以提高薄膜的热释电响应，但缺点是器件的机械强度差，而且不利于器件的集成化。
本发明提出一种复合结构的热释电薄膜。通过复合结构中低热导率的多孔膜层，有效减小热流从热释电薄膜向基底的散失，从而提高薄膜红外探测器的性能，它的机械强度高，且十分适合于制备集成热成像阵列探测器。
本发明包括基底、热释电膜层以及热释电膜层上下两面各有一层的电极膜层。本发明在热释电膜层和基底之间有一层低热导率的二氧化硅多孔膜层，热释电膜层和多孔膜层之间有一层均匀致密的二氧化硅过渡膜层。
下面结合附图对本发明作进一步的描述。
图1为本发明的结构示意图。
复合热释电薄膜的结构和各功能膜层的作用是：在热释电薄膜和基底之间加入一层低热导率的二氧化硅多孔绝热膜层，以有效减小热流从热释电薄膜向基底的传递，其厚度在0.1微米到10微米之间；为解决二氧化硅多孔膜层的多孔特性对热释电膜层的质量影响，提高热释电膜层的附着力，在热释电膜层和二氧化硅多孔膜层之间增加了一层均匀致密的二氧化硅过渡膜层。作为电信号的引出，热释电薄膜上下两面都各有一层电极膜层，这样，基底、二氧化硅多孔膜层、二氧化硅过渡膜层、下电极膜层、热释电薄膜和上电极膜层组成了复合热释电薄膜。
复合热释电薄膜的形成过程如下：首先选取基体1，它可以选用表面抛光单晶或多晶材料如单晶硅片、蓝宝石或氧化镁等，清洗干燥后制备多孔绝热膜2。根椐复合热释电薄膜的特点，要求多孔绝热膜2既要有低的热导率和一定的厚度，又要表面均匀，以利后续工艺.低热导率要求可以通过对膜中孔的尺寸和孔率的控制来实现；微小而均匀的孔和高的气孔率有利于减小热导率。多孔膜层的材料可选用二氧化硅，它的热导率小、稳定性好，且与半导体工艺兼容。对采用溶液—凝胶(Sol-Gel)方法制备出的多孔二氧化硅薄膜测试结果表明：孔率为24％、膜厚为320纳米的二氧化硅多孔膜的热导率小于0.02W/m·K。由于多孔绝热膜表面的多孔特性，无法将下电极4和热释电薄膜5直接沉积在它上面，在本发明中通过加入一层致密的过渡膜3来解决。材料也可选用二氧化硅，可用常压化学气相沉积(CVD)法或电子束蒸发方法在多孔绝热膜层2上沉积一层厚度在1微米以下的表面均匀、致密的二氧化硅过渡膜3。下电极4材料可以用铂或金等贵金属材料，通过蒸发或溅射等方法将它们沉积在过渡膜3上形成下电极4。在沉积铂或金电极前，可先溅射一层的薄钛膜打底以改善电极附着力。热释电膜层5可采用常规热释电薄膜。采用溶胶—凝胶法(Sol-Gel)制备的0.6微米厚的镧钛酸铅(PLT)薄膜5的典型电性能参数为：介电常数为350，损耗角正切小于1％(1kHz)，直流电阻率大于1×1012Ωcm，热释电系数大于3×10-8C/cm2·K。然后采用蒸发或溅射等方法制备铝、金、铂或其它材料的上电极6。这样获得了复合热释电薄膜。
采用以二氧化硅多孔绝热膜为绝热特征的复合热释电薄膜有效减小了热流从热释电薄膜向基底的散失，提高了红外探测器的热释电响应；由于全部采用平面工艺与半导体工艺完全兼容，十分适合于制备集成热成像阵列探测器。
Claims (5)
1、复合热释电薄膜，它包括基底、热释电膜层以及热释电膜层上下两面都各有的一层电极膜层，其特征在于：在所述的热释电膜层和基底之间有一层二氧化硅多孔膜层，热释电膜层和二氧化硅多孔膜层之间有一层致密的二氧化硅过渡膜层。
2、如权利要求1所述的复合热释电薄膜，其特征在于：所述的二氧化硅多孔膜层为低热导率、高气孔率的多孔薄膜，其厚度在0.1～10μm之间，气孔直径微小且分布均匀，热导率小于0.02W/m·K。
3、如权利要求1所述的复合热释电薄膜，其特征在于：所述的二氧化硅过渡膜层为致密薄膜，其厚度小于1μm。
4、如权利要求1所述的复合热释电薄膜，其特征在于：所述的基底为热释电薄膜衬底材料。
5、如权利要求1所述的复合热释电薄膜，其特征在于：所述的电极膜层为热释电薄膜电极。
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| CN95102338A CN1035143C (zh) | 1995-03-27 | 1995-03-27 | 复合热释电薄膜 |
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| CN95102338A CN1035143C (zh) | 1995-03-27 | 1995-03-27 | 复合热释电薄膜 |
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| CN1113611A CN1113611A (zh) | 1995-12-20 |
| CN1035143C true CN1035143C (zh) | 1997-06-11 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102721658A (zh) * | 2012-07-05 | 2012-10-10 | 昆明斯派特光谱科技有限责任公司 | 一种热释电光谱探测器的制备方法 |
| CN102830086A (zh) * | 2012-08-31 | 2012-12-19 | 中北大学 | 基于黑硅吸收层及多层组合膜结构的红外探测器敏感元件 |
| CN103346250B (zh) * | 2013-07-05 | 2015-09-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | 热释电薄膜红外焦平面探测器芯片及其制作方法 |
| CN114005875B (zh) * | 2021-11-01 | 2024-05-28 | 南京大学 | 一种调控金属/绝缘体界面热导的方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| EP0640815A1 (en) * | 1993-08-23 | 1995-03-01 | Matsushita Electric Industrial Co., Ltd. | Pyroelectric infrared radiation detector and method of producing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP0640815A1 (en) * | 1993-08-23 | 1995-03-01 | Matsushita Electric Industrial Co., Ltd. | Pyroelectric infrared radiation detector and method of producing the same |
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| CN1113611A (zh) | 1995-12-20 |
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