CN103508414A - MEMS (micro-electromechanical system) gyroscope chip two-sided anodic bonding technology - Google Patents
MEMS (micro-electromechanical system) gyroscope chip two-sided anodic bonding technology Download PDFInfo
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- CN103508414A CN103508414A CN201310419006.8A CN201310419006A CN103508414A CN 103508414 A CN103508414 A CN 103508414A CN 201310419006 A CN201310419006 A CN 201310419006A CN 103508414 A CN103508414 A CN 103508414A
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Abstract
The invention provides an anodic bonding technical method. The method comprises the following steps: depositing an MEMS gyroscope device layer onto a temporary polymer substrate, after deposition of a metal electrode and etching of an MEMS structure, removing the temporary polymer substrate with a chemical mechanical polishing method; after removal, respectively adhering a glass matrix and a glass cap to the two sides of the MEMS structure, heating with electric power once, and finishing the two-sided anodic bonding. Compared to the traditional two-step anodic bonding method, the technical method can save more cost and avoid the inherent defect that the secondary anodic bonding can weaken the primary anodic bonding strength, so that the reliability of the product is improved.
Description
Technical field
The invention belongs to MEMS (Micro Electrical Mechanical System) encapsulation technology field, be specifically related to carry out based on anode linkage the air-tight packaging technique of MEMS gyroscope chip.
Background technology
Along with the development of MEMS technology, encapsulation has become the business-like major technique bottleneck of obstruction MEMS.MEMS designing gyroscope, machine after, carry out air-tight packaging.MEMS gyroscope is had relatively high expectations to quality factor (Q value), requires under vacuum, to carry out air-tight packaging, and requires air-tightness to keep for a long time, and this has proposed challenge to encapsulation.
Conventional MEMS component vacuum airtight packaging method has anode linkage, silicon-Si direct bonding and eutectic bonding.Anode linkage is generally only limited to silicon on glass bonding, and bonding temperature is 300 ℃～400 ℃, and bias voltage is 500V～1000V.The processing technology that MEMS gyroscope is conventional is SOG (Silicon on Glass), adopts traditional concise and to the point process of twice anode linkage as Fig. 1 in encapsulation.Fig. 1 (a) is then thinned to the desired thickness of device layer to silicon by glass and silicon anode linkage (anode linkage for the first time).As Fig. 1 (b) processes required MEMS structure, then as Fig. 1 (c) carries out anode linkage for the second time.Anode linkage will add a voltage reverse with anode linkage for the first time for the second time, cause the impaired even destruction of bonded layer of anode linkage for the first time, and also can, lower than normal value, itself there is unsurmountable defect so adopt twice anode linkage to carry out gyrostatic packaging technology in the tensile strength at anode linkage interface for the second time.
Silicon-Si direct bonding be by two ganoid silicon chips after certain processing under uniform temperature and pressure bonding.Silicon-Si direct bonding, due to bonding temperature higher (generally higher than 800 ℃), claims again silicon melting bonding.Its General Requirements treats that bonding silicon chip surface roughness is lower than 10nm, and the depth of parallelism is less than 3um, and surface warp is lower than 25um.Due to surface roughness (lower than 10nm) and annealing temperature (more than 800 ℃) that bonding is had relatively high expectations, this is unfavorable for reducing packaging cost, and high temperature causes large residual stress to micro-structural.
So-called eutectic, be exactly two kinds of (or multiple) metals not with the mutual solid solution of form of atom, and the mechanical impurity state that interosculates and form with crystal grain form.There is the minimum fusing point of a three-phase coexistence in eutectic, is called eutectic point.Two kinds of metals that can form eutectic when eutectic point are in contact with one another, after counterdiffusion, just can form betwixt the liquid phase alloy with eutectic composition, cooling rear liquid phase layer is constantly alternately separated out two kinds of metals, every kind of metal take again that oneself original solid phase is grown up as basis, crystallization, and therefore the eutectic between two kinds of metals can closely combine two kinds of metals.Common eutectic bonding has gold silicon bonding, golden tin bonding.
General gold silicon bonding process is: elder generation's deposition chromium (or titanium) on silicon substrate, then deposit layer of gold film, finally the silicon cap layer cleaning with HF is placed on gold-plated silicon substrate, apply certain pressure, and temperature is elevated to a certain temperature (generally 430 ℃ of left and right) a little more than gold silicon eutectic point (363 ℃), phase counterdiffusion between gold/silicon, at interface formation cocrystalization compound.After temperature keeps a period of time, form more eutectic alloy, until silicon or gold run out of, just formed eutectic bonding layer after cooling.The temperature of gold silicon bonding is 430 ℃, far below silicon-Si direct bonding temperature (generally higher than 800 ℃), bond strength is high, and effects on surface roughness is not very sensitive, good with aluminium interconnection line compatibility, this is for improving the encapsulation of MEMS gyroscope yield rate and reliability, having reduced costs great role.
In the present invention, interim macromolecule substrate is to form after the mixed solution by epoxy resin E44 and Sai Ke-tung oil acid anhydride (curing agent is in a liquid state) is heating and curing.The concentration of the epoxy resin E44 of mixed solution is between 40% to 60%.
Summary of the invention
The present invention proposes a kind of MEMS gyroscope chip double-side anode linkage technique, and object is simplification of flowsheet, improves the yield rate of MEMS gyroscope chip.
A kind of MEMS gyroscope chip double-side anode linkage technique provided by the invention, its step comprises:
The 1st step is deposition device layer silicon on macromolecule substrate;
The 2nd step is carried out photoetching on device layer silicon, and makes metal electrode;
The photoetching again on device layer silicon of the 3rd step, then deep etching, until device layer silicon etching is worn, obtains gyrostatic micro-structural;
The 4th step is removed macromolecule substrate, and remaining is only the device layer silicon with metal electrode;
The 5th step glass substrate one side is etched with groove, and on glass block, respectively from both sides etched recesses and through hole, glass substrate and glass block are processed with a side of groove and are close to respectively device layer Gui both sides, then two sides anode linkage;
The 6th step is sputter or evaporated metal lead material in the through hole of glass block, forms metal lead wire.
As the improvement of technique scheme, described glass substrate and glass block be preferred alumina silicate glass material all; Product after 40%～60% proportioning solution of described macromolecule substrate preferred epoxy E44 and Sai Ke-tung oil acid anhydride (curing agent is in a liquid state) solidifies.
Further improvement as technique scheme, in the 5th step, the mode that powers up of two sides anode linkage is: device layer silicon connects positive source, glass substrate and glass block be loading power negative pole simultaneously, bonding temperature is 300 ℃～400 ℃, voltage 500V～1000V, on-load pressure makes close contact between glass and device layer silicon simultaneously.
Technological process of the present invention is based on anode linkage, but is with conventional anode bonding difference, and in this technological process, two-sided anode linkage completes in a step process, has avoided the inherent shortcoming of traditional twice anode linkage.As previously mentioned, twice anode linkage has following defect: anode linkage can cause the impaired even destruction of bonded layer of anode linkage for the first time for the second time, and the tensile strength at anode linkage interface also can be lower than normal value for the second time.
Particularly, the present invention compared with prior art has the following advantages:
1) twice traditional anode linkage replaced by two-sided anode linkage, and two-sided anode linkage adopts interim macromolecule substrate, and bonding process completes in a step operation, has simplified technological process, improves the yield rate of MEMS gyroscope chip;
2) adopted traditional anode linkage, chip surface roughness is less demanding, bonding temperature low (300 ℃～400 ℃, far below silicon-Si direct bonding, suitable with gold-silicon eutectic bonding temperature);
3) because device layer both sides are all glass, be a kind of symmetric packages, after encapsulation, warpage is little, improves chip operation reliability.
Accompanying drawing explanation
Fig. 1 is the process simplification of traditional double surface anode bonding and powers up mode.
Fig. 2 adopts interim macromolecule substrate to carry out the process flow diagram of MEMS gyroscope chip double-side anode linkage;
Fig. 3 is the mode that powers up during two-sided anode linkage in the present invention;
Code name explanation in figure: 1: macromolecule substrate, 2: device layer silicon, 3: metal electrode (first deposit Cr, next deposit Au, form metal electrode), 4: glass substrate, 5: glass block, 6: aluminum lead.
The specific embodiment
Twice anode linkage technique in traditional MEMS encapsulation is such (with reference to figure 1): twice anode linkage carries out in two steps.First with glass and silicon, carry out anode linkage, process device layer on silicon after, then carry out anode linkage for the second time in an other side of device.As previously mentioned, twice anode linkage has following shortcoming in two steps: anode linkage will load a voltage reverse with anode linkage for the first time for the second time, cause no matter impaired even destruction of bonded layer of anode linkage for the first time (is impaired or destruction, the tensile strength of anode linkage all can decline for the first time), and the tensile strength at anode linkage interface also can be lower than the tensile strength of anode linkage for the first time for the second time.
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described further.At this, it should be noted that, for the explanation of these embodiments, be used for helping to understand the present invention, but do not form limitation of the invention.In addition,, in each embodiment of described the present invention, involved technical characterictic just can not combine mutually as long as do not form each other conflict.
Example 1:
The 1st step: as shown in Fig. 2 (a), deposition device layer silicon 2 on macromolecule substrate 1.
The 2nd step: as Fig. 2 (b), carry out photoetching on device layer silicon 2, and successively deposit Cr and Au, peel off unwanted part after having deposited, obtain metal electrode 3;
The 3rd step: as Fig. 2 (c), photoetching again on device layer silicon 2, then deep etching, until device layer silicon 2 etchings are worn, obtains gyrostatic micro-structural;
The 4th step: as Fig. 2 (d), remove macromolecule substrate 1 by the method for chemically mechanical polishing, remaining is only the device layer silicon 2 with metal electrode 3.
The 5th step: as Fig. 2 (e), glass substrate 4 and glass block 5 be the both sides in device layer silicon 2, then two sides anode linkage respectively.Glass substrate 4 one sides are etched with groove, on glass block 5, are etched with respectively groove and through hole from both sides.Glass substrate 4 and the reeded side of glass block 5 processing are close to respectively the both sides of device layer silicon 2.
The mode that powers up of two sides anode linkage is as shown in figure (2).Device layer silicon 2 connects positive source, and glass substrate 4 and glass block 5 be loading power negative pole simultaneously, 350 ℃ of bonding temperatures, and voltage 800V, wants on-load pressure to make close contact between glass and silicon chip simultaneously.
The 6th step: as Fig. 2 (f), sputter in the through hole of glass block 5 (or evaporation) metallic aluminium, forms aluminum lead 6.
Example 2:
The 1st step: as shown in Fig. 2 (a), deposition device layer silicon 2 on macromolecule substrate 1.
The 2nd step: as Fig. 2 (b), carry out photoetching on device layer silicon 2, and successively deposit Cr and Au, peel off unwanted part after having deposited, obtain metal electrode 3;
The 3rd step: as Fig. 2 (c), photoetching again on device layer silicon 2, then deep etching, until device layer silicon 2 etchings are worn, obtains gyrostatic micro-structural;
The 4th step: as Fig. 2 (d), remove macromolecule substrate 1 by the method for chemically mechanical polishing, remaining is only the device layer silicon 2 with metal electrode 3.
The 5th step: as Fig. 2 (e), glass substrate 4 and glass block 5 be the both sides in device layer silicon 2, then two sides anode linkage respectively.Glass substrate 4 one sides are etched with groove, on glass block 5, are etched with respectively groove and through hole from both sides.Glass substrate 4 and the reeded side of glass block 5 processing are close to respectively the both sides of device layer silicon 2.
The mode that powers up of two sides anode linkage is as shown in figure (2).Device layer silicon 2 connects positive source, and glass substrate 4 and glass block 5 be loading power negative pole simultaneously, 300 ℃ of bonding temperatures, and voltage 1000V, wants on-load pressure to make close contact between glass and silicon chip simultaneously.
The 6th step: as Fig. 2 (f), sputter in the through hole of glass block 5 (or evaporation) metallic aluminium, forms aluminum lead 6.
Example 3:
The 1st step: as shown in Fig. 2 (a), deposition device layer silicon 2 on macromolecule substrate 1.
The 2nd step: as Fig. 2 (b), carry out photoetching on device layer silicon 2, and successively deposit Cr and Au, peel off unwanted part after having deposited, obtain metal electrode 3;
The 3rd step: as Fig. 2 (c), photoetching again on device layer silicon 2, then deep etching, until device layer silicon 2 etchings are worn, obtains gyrostatic micro-structural;
The 4th step: as Fig. 2 (d), remove macromolecule substrate 1 by the method for chemically mechanical polishing, remaining is only the device layer silicon 2 with metal electrode 3.
The 5th step: as Fig. 2 (e), glass substrate 4 and glass block 5 be the both sides in device layer silicon 2, then two sides anode linkage respectively.Glass substrate 4 one sides are etched with groove, on glass block 5, are etched with respectively groove and through hole from both sides.Glass substrate 4 and the reeded side of glass block 5 processing are close to respectively the both sides of device layer silicon 2.
The mode that powers up of two sides anode linkage is as shown in figure (2).Device layer silicon 2 connects positive source, and glass substrate 4 and glass block 5 be loading power negative pole simultaneously, 400 ℃ of bonding temperatures, and voltage 600V, wants on-load pressure to make close contact between glass and silicon chip simultaneously.
The 6th step: as Fig. 2 (f), sputter in the through hole of glass block 5 (or evaporation) metallic aluminium, forms aluminum lead 6.
Those skilled in the art will readily understand; the foregoing is only preferred embodiment of the present invention; not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (4)
1. a MEMS gyroscope chip double-side anode linkage technique, its step comprises:
The 1st step is deposition device layer silicon on macromolecule substrate;
The 2nd step is carried out photoetching on device layer silicon, and makes metal electrode;
The photoetching again on device layer silicon of the 3rd step, then deep etching, until device layer silicon etching is worn, obtains gyrostatic micro-structural;
The 4th step is removed macromolecule substrate, and remaining is only the device layer silicon with metal electrode;
The 5th step glass substrate one side is etched with groove, and on glass block, respectively from both sides etched recesses and through hole, glass substrate and glass block are processed with a side of groove and are close to respectively device layer Gui both sides, then two sides anode linkage;
The 6th step is sputter or evaporated metal lead material in the through hole of glass block, forms metal lead wire.
2. MEMS gyroscope chip double-side anode linkage technique according to claim 1, is characterized in that, described glass substrate and glass block all adopt alumina silicate glass material.
3. MEMS gyroscope chip double-side anode linkage technique according to claim 1, is characterized in that, described macromolecule substrate is the product after 40 % ~ 60% proportioning solution of epoxy resin E44 and Sai Ke-tung oil acid anhydride (curing agent is in a liquid state) solidify.
4. MEMS gyroscope chip double-side anode linkage technique according to claim 1, it is characterized in that, in the 5th step, the mode that powers up of two sides anode linkage is: device layer silicon connects positive source, glass substrate and glass block be loading power negative pole simultaneously, bonding temperature is 300 ℃～400 ℃, voltage 500V～1000V, and on-load pressure makes close contact between glass and device layer silicon simultaneously.
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Cited By (6)
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| CN104340954B (en) * | 2013-07-23 | 2017-10-24 | 马克西姆综合产品公司 | The processing method of various pattern MEMS sealing caps |
| CN108217579A (en) * | 2017-12-29 | 2018-06-29 | 中国科学院半导体研究所 | Wafer level high vacuum leadless packaging method based on silica glass anode linkage |
| CN109987567A (en) * | 2017-12-20 | 2019-07-09 | 罗伯特·博世有限公司 | Laser bonding method and micromechanical devices with laser bonding interconnecting piece |
| CN112652597A (en) * | 2020-12-22 | 2021-04-13 | 苏州原位芯片科技有限责任公司 | Multilayer stacked anodic bonding structure and preparation method thereof |
| CN113547223A (en) * | 2021-07-21 | 2021-10-26 | 中国人民解放军国防科技大学 | Method for manufacturing planar wafer-level fused quartz MEMS gyroscope |
| CN109987567B (en) * | 2017-12-20 | 2024-06-25 | 罗伯特·博世有限公司 | Laser bonding method and micromechanical device having a laser bonding connection |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113547223B (en) * | 2021-07-21 | 2022-04-22 | 中国人民解放军国防科技大学 | Method for manufacturing planar wafer-level fused quartz MEMS gyroscope |
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