CN112652597A - Multilayer stacked anodic bonding structure and preparation method thereof - Google Patents
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- 239000004065 semiconductor Substances 0.000 claims description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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Abstract
The invention provides a multilayer stacking anodic bonding structure which comprises an anodic bonding structure and a conductive film, wherein the conductive film is arranged at the edge of the anodic bonding structure and is sequentially communicated with the upper surface or the lower surface of each layer of wafer of the anodic bonding structure, the upper surface or the lower surface of the wafer is connected with the edge through the conductive film, the effective connection between the upper surface or the lower surface of the wafer and bonding equipment is realized, the effective bonding of the multilayer stacking anodic bonding structure is finally realized, the problem of multilayer stacking anodic bonding of the existing anodic bonding equipment is solved, and meanwhile, the multilayer stacking anodic bonding structure is suitable for wafer stacking anodic bonding of a surface unprocessed structure or a processed structure.
Description
Technical Field
The invention belongs to the field of micro-systems (MEMS) and wafer level packaging, and particularly relates to a multilayer stacking anodic bonding structure and a preparation method thereof.
Background
Wu Jing et al (three-layer anodic bonding technology based on the controllable thickness of the intermediate silicon wafer) adopt a distributed anodic bonding mode, and the notches are staggered during the first anodic bonding; when the second time of bonding is carried out, the thin conducting strip is added on the clamp and connected to the exposed silicon after the first time of anodic bonding, so that the silicon is connected with the anode of the bonding equipment, and the bonding defect or failure problem caused by unsmooth connection of the second time of anodic bonding is solved. However, this method increases the complexity of the bonding jig and is inconvenient to operate.
Lvwenlong et al (a preparation method of a glass/silicon/glass three-layer structure material based on electrostatic bonding) adopts magnetron sputtering to cover metal on both sides and side surfaces of a combined piece subjected to primary anodic bonding, then thins and removes silicon surface metal and polishes the combined piece, and when the anode is bonded for the second time, silicon is connected with the anode of bonding equipment through side wall metal. However, the method comprises two times of sputtering and one time of thinning and polishing, which not only increases the process complexity and the cost, but also is not suitable for the wafer with a processed structure on the surface, and can cause the problem of bonding failure due to unsmooth connection of the side wall caused by chamfering of the edge of the wafer.
The above technique is difficult to realize for anodic bonding of more than three layers due to the complicated operation.
Disclosure of Invention
In order to solve the technical problems, the invention provides a multilayer stacking anodic bonding structure, which connects the upper surface or the lower surface of a wafer with an edge through a conductive film, realizes effective connection between the upper surface or the lower surface of the wafer and bonding equipment, and finally realizes effective bonding of the multilayer stacking anodic bonding structure.
On the other hand, the invention also provides a preparation method of the multilayer stacking anodic bonding structure, the preparation method has simple process, overcomes the problems of multilayer stacking anodic bonding of the existing bonding equipment, and provides a reliable means for the development of the multifunctionalization of the micro-electro-mechanical system or the chip.
In order to achieve the above purpose, the first technical scheme of the method comprises the following specific contents:
the multilayer stacked anodic bonding structure comprises an anodic bonding structure and a conductive film, wherein the conductive film is arranged at the edge of the anodic bonding structure and at least communicated with the surface of a sub-outer layer wafer of the anodic bonding structure.
Specifically, in this embodiment, the conductive film is mainly used to connect the upper surface or the lower surface of the wafer of the existing or completed anodic bonding structure with the bonding apparatus, so as to complete anodic bonding of the next layer of wafer with the existing bonding structure, and obtain a more multi-layer bonding structure, that is, the conductive film mainly plays a role of connecting the wafer inner layer of the existing or completed anodic bonding structure with the bonding apparatus in anodic bonding. In a specific implementation process, one end of the conductive film is connected with the upper surface or the lower surface of the anode wafer of the existing or finished anodic bonding structure, the other end of the conductive film can be connected with a partial region of the outer edge of the existing or finished anodic bonding structure, can be connected with the whole outer edge of the existing or finished anodic bonding structure, or the other end of the conductive film directly covers the outer surface of the cathode wafer, and the middle part of the conductive film is connected with the outer edge of the existing or finished anodic bonding structure; in the bonding process, the conductive film can be an independent structure or an integrated structure integrated with the wafer, and in the process of finishing anodic bonding, the implementation of the embodiment of the invention is not influenced by any mode.
In the specific implementation process, the conductive film can be a nano-scale or micron-scale independent metal film with high conductivity prepared by mask shielding deposition, photoetching-deposition-stripping, deposition-photoetching-etching, screen printing, customization and the like, or a film which is integrated with a wafer or a bonding structure into a whole by mask shielding deposition, photoetching-deposition-stripping, deposition-photoetching-etching, screen printing and the like; with the reduction of the size of the anodic bonding structure and the increase of the number of layers of the wafer, a conductive film with smaller thickness and better toughness is generally selected, and in the process of connecting the conductive film and the wafer, the surface of the wafer can be thinned according to requirements, so that the effective bonding of the wafer layer can be effectively realized, and meanwhile, the realization of the anodic bonding of a plurality of layers with small size and more functions is possible.
Further, the shape of the wafer is a regular shape.
Further, the shape of the wafer is irregular.
Specifically, each layer of wafer of the multi-layer stacked anodic bonding structure in this embodiment may be a regular-shaped wafer, such as a square-shaped wafer, a rectangular-shaped wafer, or an irregular wafer, and the multi-layer stacked bonding structure provided in this embodiment provides a reliable technique for implementing anodic bonding structures of different shapes and different sizes, and also provides a possibility for implementing bonding between wafers of different shapes, thereby effectively solving the problems and limitations existing in the existing bonding technology and the existing bonding equipment when performing multi-layer bonding, and providing a possibility for implementing multi-level multi-functional micro-electromechanical or chip.
Further, the anode bonding structure comprises an N-level bonding structure, where N is ≧ 2, the N-level bonding structure comprises N cathode wafers and at least N-1 anode wafers, and the anode wafers and the cathode wafers are arranged in a mutually-intersecting manner.
Further, the conductive film is arranged on the edge of the N-level bonding structure and communicated with the surfaces of the N-1 adjacent anode wafers.
Furthermore, the conductive film is arranged at the edge of the N-1 level bonding structure and is at least communicated with the surface of one of the anode wafers.
Further, the thickness of the conductive film is 10nm-50 μm.
It should be noted that, in an embodiment, the size of the conductive film may be selected to be a conductive film with a smaller thickness according to different specific designs and properties of the conductive film material.
Further, the conductive film is made of a conductive material. One or more of Ti, TiW, Al, Cr and Ni.
It is worth to be noted that the conductive film is mainly used for electrical connection in the anodic bonding process, and the bonding equipment is effectively connected with the wafer inner layer of the existing or completed anodic bonding structure, so that the conductive film in this embodiment may also be made of a metal material with good conductivity, such as Ti, TiW, Al, Cr, Ni, or the like, which may be made of one metal material or a mixture of multiple metal materials, but the melting point of the conductive film is higher than that of the wafer.
Further, the anode wafer is one of a semiconductor, a conductor and a chip, and specifically, the chip may be a bare wafer or a finished product.
Further, the anode wafer and the cathode wafer are consistent in structural size.
Further, the anode wafer and the cathode wafer are not structurally uniform in size.
The embodiment of the invention provides another technical scheme as follows:
a preparation method of a multilayer stacked anodic bonding structure comprises the following steps:
s12, communicating the surface of the first anode wafer and the outer edge of the primary bonding structure by adopting a first conductive film; or the like, or, alternatively,
s13, sequentially communicating the surface of the first anode wafer, the outer edge of the primary bonding structure and the surface of the first cathode wafer by adopting the first conductive film;
s14, connecting the primary bonding structure with the bonding equipment anode through the first conductive film, connecting the second cathode wafer with the bonding equipment cathode, and carrying out anodic bonding to obtain a secondary bonding structure.
Further, after the step S14, a step S14 is further included
After the step S14, a step is further included,
s15, connecting the secondary bonding structure with the cathode of the bonding device through the first conductive film, connecting the second anode wafer with the anode of the bonding device, and carrying out anodic bonding to obtain a tertiary bonding structure.
Further, after the step S15, a step is included,
s16, connecting the third-level bonding structure with the anode of the bonding equipment through a first conductive film, connecting a third anode wafer with the cathode of the bonding equipment, and carrying out anodic bonding to obtain a fourth-level bonding structure; or
S17, connecting the surface of the second anode wafer of the tertiary bonding structure with the outer edge of the second-level bonding structure by adopting a second conductive film;
s18, connecting the tertiary bonding structure with the anode of the bonding equipment through the second conductive film, connecting a third cathode wafer with the cathode of the bonding equipment, and carrying out anodic bonding to obtain a quaternary bonding structure;
and S19, sequentially repeating the steps to carry out anodic bonding, and obtaining the N-level bonding structure.
Further, the first conductive film and the second conductive film are connected in an overlapping manner.
Further, the first conductive film and the second conductive film are of an integral structure.
Further, the first conductive film and the second conductive film are independent structures which are not overlapped and not connected.
Has the advantages that:
1. in the embodiment of the invention, the conductive film is arranged at the edge of the anodic bonding structure and is communicated with the upper surface or the lower surface of each wafer layer of the anodic bonding structure, and in the process of implementing anodic bonding, the conductive film realizes effective connection of the anodic bonding structure and bonding equipment, thereby providing reliability for multilayer stacked anodic bonding.
2. The multilayer stacked anodic bonding structure comprises the anodic bonding structure and the conductive film, is simple in structure, and provides effective technical support for the realization of multifunctional and multilevel micro-electromechanical or chip design and manufacture.
3. In the embodiment of the invention, the wafers in the multilayer stacking anodic bonding structure can be semiconductors, conductors, chips, bare wafers and the like, and various wafer choices increase the diversity of the design of the multilayer stacking anodic bonding structure on one hand, increase the application field of the multilayer stacking anodic bonding structure on the other hand, and reduce the cost of the multilayer stacking anodic bonding structure through diversified wafer choices.
4. In the embodiment of the invention, the conductive film is adopted to realize the connection of the anodic bonding structure and the bonding equipment, so that the stacking of wafers with different structure sizes and different shapes can be realized, and the reliability is provided for the realization of diversified multilayer stacking anodic bonding structures with different shape sizes.
Drawings
Fig. 1 is a schematic structural diagram of a multi-layer stacked anodic bonding structure provided in embodiment 1 of the present invention;
FIG. 2 is a schematic structural diagram of a primary bonding structure provided in example 1 of the present invention;
FIG. 3 is a schematic structural diagram of another first-level bonding structure and a conductive film provided in example 1 of the present invention;
FIG. 4 is a schematic flow chart of a process for preparing a multi-layer stacked anodic bonding structure provided in example 1 of the present invention;
FIG. 5 is a schematic structural diagram of a primary bonding structure provided in example 2 of the present invention;
FIG. 6 is a schematic structural diagram of a secondary bonding structure provided in example 2 of the present invention;
FIG. 7 is a schematic structural view of a three-level bonding structure provided in example 2 of the present invention;
FIG. 8 is a schematic structural view of a quaternary bonding structure provided in example 2 of the present invention;
fig. 9 is a schematic flow chart of a process for preparing a multi-layer stacked anodic bonding structure provided in example 2 of the present invention;
fig. 10 is a schematic structural diagram of a multi-layer stacked anodic bonding structure provided in embodiment 3 of the present invention;
fig. 11 is a schematic structural diagram of a multi-layer stacked anodic bonding structure provided in embodiment 4 of the present invention;
fig. 12 is an exploded view of a multi-layer stacked anodic bonding structure provided in example 5 of the present invention;
fig. 13 is a structural schematic diagram of a multi-layer stacked anodic bonding structure provided in embodiment 5 of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the following detailed description and accompanying drawings. The present application may be embodied in many different forms and is not limited to the embodiments described in the present embodiment. The following detailed description is provided to facilitate a more thorough understanding of the present disclosure, and the words used to indicate orientation, top, bottom, left, right, etc. are used solely to describe the illustrated structure in connection with the accompanying figures.
Example 1
Referring to fig. 1 and fig. 2, the present embodiment provides a multilayer stacked anodic bonding structure, including an anodic bonding structure 12 and a conductive thin film 114, where the anodic bonding structure 12 is formed by bonding three layers of wafers, specifically, the anodic bonding structure includes a first cathode wafer 111, a first anode wafer 112, and a second cathode wafer 113 connected in sequence, where bonding of the first cathode wafer 111 and the first anode wafer 112 forms a primary bonding structure 11, and the primary bonding structure 11 and the second cathode wafer 113 are bonded to form a secondary bonding structure, that is, the anodic bonding structure 12 provided in the present embodiment.
Specifically, in this embodiment, the conductive film 114 may be an independent film structure, and covers the edge of the primary bonding structure 11, i.e. the side surface of the primary bonding structure, and is respectively communicated with the upper surfaces or the lower surfaces of the first anode wafer 112 and the first cathode wafer 111 of the primary bonding structure;
it should be noted that, in the present embodiment, the conductive film 114 may also communicate only with the upper surface or the lower surface of the first anode wafer 112 and the edge of the primary bonding mechanism 11, as shown in fig. 3.
Specifically, in this embodiment, the conductive film 114 is made of a conductive material or a mixture of conductive materials with better conductivity of Ti, TiW, Al, Cr and Ni, or may be a film structure integrated with the primary bonding structure 11 and covering the surface of the primary bonding structure 11 and communicating the upper surface or the lower surface of the first anode wafer 112; in a specific implementation process, the conductive film 114 may form a film integrated with the primary bonding structure 11 on the primary bonding structure 11 by a mask-shielding deposition method or a screen printing method, for example, a Ti film structure integrated with the primary bonding structure is deposited on the primary bonding structure after Ti is evaporated by a person skilled in the art, and the film structure at least sequentially communicates with the upper surface or the lower surface of the first anode wafer and the edge of the primary bonding structure, and the Ti film structure is a conductive film in this embodiment, which effectively implements electrical connection between the primary bonding structure and the bonding apparatus, that is, implements electrical connection between the primary bonding structure formed by the first cathode wafer and the first anode wafer and the bonding apparatus, and further implements anodic bonding between the primary bonding structure and the second cathode wafer, finally, the purpose of anodic bonding of the three layers of wafers is achieved.
It should be noted that, in the specific implementation process, the conductive thin film 114 may be a nano-scale or micro-scale independent metal thin film with high conductivity prepared by mask-masked deposition, photolithography-deposition-lift-off, deposition-photolithography-etching, screen printing, customization, or a thin film integrated with a wafer or a bonding structure by mask-masked deposition, photolithography-deposition-lift-off, deposition-photolithography-etching, screen printing, or the like; with the reduction of the size of the anodic bonding structure and the increase of the number of layers of the wafer, a conductive film with smaller thickness and better toughness is generally selected, and in the process of connecting the conductive film and the wafer, the surface of the wafer can be thinned according to requirements, so that the effective bonding of the wafer layer can be effectively realized, and meanwhile, the realization of the anodic bonding of a plurality of layers with small size and more functions is possible.
In the embodiment of the present invention, the arrangement of the conductive film 114 effectively solves the problem of effective connection between the bonded structure and the bonding apparatus after bonding, and meanwhile, the conductive film has a simple structure, and the connection between the bonded structure and the bonding apparatus is realized by using the conductive film, so that the process difficulty of multilayer bonding can be effectively reduced, and the purpose of reducing cost is further realized.
Specifically, in this embodiment, the first cathode wafer 111, the second cathode wafer 113, and the first anode wafer 112 may be selected from wafers with regular shapes, or may also be selected from wafers with irregular shapes and/or sizes that are not consistent according to different design requirements, for example, the first anode wafer 112 may be selected from an elliptical structure, the first cathode wafer 111 may be selected from a rectangular or square structure, the second cathode wafer 113 may be selected from an elliptical structure with a size different from that of the first anode wafer, and the flexible selection of the wafer structure size may implement diversified and multifunctional bonding structures on the one hand, and those skilled in the art may design and manufacture bonding structures with regular shapes, or may design bonding structures with irregular shapes, such as a bonding structure with a trapezoidal structure, a bonding structure with a W structure shape, and the like; on the other hand, the cost of the bonding structure can be reduced, and the realization possibility is provided for the multi-field application of the bonding structure. For example, as shown in fig. 1 to fig. 3, the first anode wafer 112 is a wafer with an oval structure having a short diameter and a trimmed edge at one end, the first cathode wafer 111 and the second cathode wafer 113 are wafers with an oval structure having a long diameter and a trimmed edge at one end, one end of the conductive film 114 is connected to the upper surface or the lower surface of the first cathode wafer 111, and the other end is connected to the upper surface or the lower surface of the first anode wafer 112 and to the side surface of the first cathode wafer, that is, the middle portion of the conductive film 114 is connected to a portion of the edge of the primary bonding structure 11.
In addition, in the present embodiment, the first anode wafer 112 may be one of a semiconductor, a conductor, and a chip, and may be a bare wafer or a chip; the first cathode wafer 111 and the second cathode wafer 113 are insulator wafers or chips; the diversified wafer selection range greatly reduces the cost of the bonding structure and provides the possibility of realizing the application of the bonding structure in more fields.
Specifically, in this embodiment, the first cathode wafer 111 and the second cathode wafer 113 are BF33 glass wafers or Pyrex7740 glass wafers, specifically, the first cathode wafer 111 and the second cathode wafer 113 may be made of the same specification type material or different specification types material, and the first anode wafer is a bare chip.
The method for manufacturing a multi-layer stacked anodic bonding structure provided in this embodiment, referring to fig. 4, includes the following steps:
s111, connecting the first anode wafer 112 with an anode of a bonding device, connecting the first cathode wafer 111 with a cathode of the bonding device, and bonding to obtain a primary bonding structure 11;
s112, connecting the upper surface of the first anode wafer, the outer edge of the primary bonding structure and the lower surface of the first cathode wafer in sequence by using the conductive film 14;
s113, connecting the primary bonding structure 11 with the anode of the bonding equipment through the conductive film 14, connecting the second cathode wafer 113 with the cathode of the bonding equipment, and carrying out anodic bonding to obtain a secondary bonding structure 12.
Example 2
Referring to fig. 5, 6, 7, and 8, a difference between the multi-layer stacked anodic bonding structure provided in this embodiment and embodiment 1 is that the anodic bonding structure 24 in this embodiment is formed by bonding five wafers, specifically, the anodic bonding structure 24 includes a first cathode wafer 211, a first anode wafer 221, a second cathode wafer 212, a second anode wafer 222, and a third cathode wafer 213 which are connected in sequence, where the bonding structure of the first cathode wafer 211 and the first anode wafer 221 is a primary bonding structure 21, the bonding structure of the primary bonding structure 21 and the second cathode wafer 212 is a secondary bonding structure 22, the secondary bonding structure 22 and the second anode wafer 222 are bonded to obtain a tertiary bonding structure 23, and the bonding structure of the tertiary bonding structure 23 and the third cathode wafer 213 is a quaternary bonding structure 24, the four-level bonding structure 24 is an anodic bonding structure formed by bonding five layers of wafers provided in this embodiment, and meanwhile, the multi-layer stacked anodic bonding structure provided in this embodiment further includes a first conductive film 231 and a second conductive film 232, where the first conductive film 231 and the second conductive film 232 are respectively disposed at different positions of the anodic bonding structure 24.
The method for manufacturing a multi-layer stacked anodic bonding structure provided in this embodiment, referring to fig. 9, includes the following steps:
s211, connecting the first anode wafer 221 with an anode of a bonding apparatus, and connecting the first cathode wafer 211 with a cathode of the bonding apparatus, and bonding to obtain a first-level bonding structure 21;
s212, sequentially connecting the upper surface of the first anode wafer 221, the outer edge of the primary bonding structure 21, and the lower surface of the first cathode wafer 211 with the first conductive film 231;
s213 connecting the primary bonding structure 21 with the anode of the bonding apparatus through the first conductive film 231, connecting the second cathode wafer 212 with the cathode of the bonding apparatus, and performing anodic bonding to obtain a secondary bonding structure 22;
s214, connecting the secondary bonding structure 22 with the anode of the bonding apparatus through the first conductive film 231, connecting the second anode wafer 222 with the anode of the bonding apparatus, and performing anodic bonding to obtain a tertiary bonding structure 23;
s215 connecting the surface of the second anode wafer 222 of the tertiary bonding structure 23 with the outer edge of the second-level bonding structure by using a second conductive film 232;
s216 connects the third bonding structure 23 with the anode of the bonding apparatus through the second conductive film 232, connects the third cathode wafer 213 with the cathode of the bonding apparatus, and performs anodic bonding to obtain a fourth-level bonding structure 24, i.e. an anodic bonding structure formed by bonding five layers of wafers provided in this embodiment.
Specifically, in this embodiment, the first conductive film 231 and the second conductive film 232 are independent film structures;
example 3
Referring to fig. 10, this embodiment provides a multi-layer stacked anodic bonding structure, which is different from embodiment 1 in that the conductive film completely covers the entire edge of the anodic bonding structure.
Example 4
Referring to fig. 11, a difference between the multi-layer stacked anodic bonding structure provided in this embodiment and embodiment 1 is that the anodic bonding structure in this embodiment is a "concave" structure.
Example 5
Referring to fig. 12-13, a difference between the multi-layer stacked anodic bonding structure provided in this embodiment and embodiment 1 is that in this embodiment, a micro channel 51 is respectively processed on the anode wafer and the cathode wafer, specifically, the micro channel on the anode wafer and the micro channel on the cathode wafer are stacked at an angle.
The above description is only for the preferred embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention disclosed in the present invention should be covered within the protection scope of the present invention.
Claims (17)
1. The multilayer stacking anodic bonding structure is characterized by comprising an anodic bonding structure and a conductive film, wherein the conductive film is arranged at the edge of the anodic bonding structure and at least communicated with the surface of a sub-outer layer wafer of the anodic bonding structure.
2. The multi-layer stacked anodic bonding structure of claim 1, wherein the wafer is regular in shape.
3. The multi-layer stacked anodic bonding structure of claim 1, wherein the wafer is irregularly shaped.
4. The multi-layer stacked anodic bonding structure of claim 2 or 3, wherein the anodic bonding structure comprises an N-level bonding structure, N ≧ 2, the N-level bonding structure comprising N cathode wafers and at least N-1 anode wafers, the anode wafers and the cathode wafers being arranged across from each other.
5. The multi-layer stacked anodic bonding structure of claim 4, wherein the conductive film is disposed at an edge of the N-level bonding structure and connects surfaces of N-1 adjacent anodic wafers.
6. The multi-layer stacked anodic bonding structure of claim 4, wherein the conductive film is disposed at an edge of the N-1 level bonding structure and is connected to at least one surface of the anode wafer.
7. The multi-layer stacked anodic bonding structure of any one of claims 5 to 6, wherein the conductive thin film has a thickness of 10nm to 50 μm.
8. The multi-layer stacked anodic bonding structure of claim 7, wherein the conductive thin film is made of a conductive material.
9. The multi-layer stacked anodic bonding structure of claim 7, wherein the anodic wafer is one of a semiconductor, a conductor, and a chip.
10. The multi-layer stacked anodic bonding structure of claim 7, wherein the anodic wafer is dimensionally identical to the cathodic wafer structure.
11. The multi-layer stacked anodic bonding structure of claim 7, wherein the anodic wafer is not dimensionally consistent with the cathodic wafer structure.
12. A method of making a multilayer stacked anodic bonding structure according to any of claims 1 to 11, comprising the steps of:
s11, respectively connecting the first anode wafer with the anode of the bonding equipment, connecting the first cathode wafer with the cathode of the bonding equipment, and bonding to obtain a primary bonding structure;
s12, communicating the surface of the first anode wafer and the outer edge of the primary bonding structure by adopting a first conductive film; or the like, or, alternatively,
s13, sequentially communicating the surface of the first anode wafer, the outer edge of the primary bonding structure and the surface of the first cathode wafer by adopting the first conductive film;
s14, connecting the primary bonding structure with the bonding equipment anode through the first conductive film, connecting the second cathode wafer with the bonding equipment cathode, and carrying out anodic bonding to obtain a secondary bonding structure.
13. The method for preparing a multi-layer stacked anodic bonding structure according to claim 12, further comprising a step of, after the step S14,
s15, connecting the secondary bonding structure with the cathode of the bonding device through the first conductive film, connecting the second anode wafer with the anode of the bonding device, and carrying out anodic bonding to obtain a tertiary bonding structure.
14. The method for preparing a multi-layer stacked anodic bonding structure according to claim 13, further comprising a step of, after the step S15,
s16, connecting the tertiary bonding structure with the anode of the bonding equipment through a first conductive film, connecting a third cathode wafer with the cathode of the bonding equipment, and carrying out anodic bonding to obtain a quaternary bonding structure; or
S17, connecting the surface of the second anode wafer of the tertiary bonding structure with the outer edge of the second-level bonding structure by adopting a second conductive film;
s18, connecting the tertiary bonding structure with the anode of the bonding equipment through the second conductive film, connecting a third cathode wafer with the cathode of the bonding equipment, and carrying out anodic bonding to obtain a quaternary bonding structure;
and S19, sequentially repeating the steps to carry out anodic bonding, and obtaining the N-level bonding structure.
15. The method for preparing a multi-layer stacked anodic bonding structure according to claim 13, wherein the first conductive film and the second conductive film are connected in an overlapping manner.
16. The method of claim 13, wherein the first conductive film and the second conductive film are a unitary structure.
17. The method for preparing a multi-layered stacked anodic bonding structure according to claim 13, wherein the first conductive film and the second conductive film are respectively non-overlapping, non-connected independent structures.
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| Publication number | Priority date | Publication date | Assignee | Title |
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