CN103474504A - Method for preparing reflecting film, solar cell panel and its crystalline silicon wafer - Google Patents
Method for preparing reflecting film, solar cell panel and its crystalline silicon wafer Download PDFInfo
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- CN103474504A CN103474504A CN2012101848184A CN201210184818A CN103474504A CN 103474504 A CN103474504 A CN 103474504A CN 2012101848184 A CN2012101848184 A CN 2012101848184A CN 201210184818 A CN201210184818 A CN 201210184818A CN 103474504 A CN103474504 A CN 103474504A
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Abstract
The invention provides a method for preparing a reflecting film. The method comprises the following steps: protective gas is filled into reaction equipment, pressurization is carried out and microwave is transmitted, the temperature in the reaction equipment is adjusted to a first temperature, silane and nitrous oxide are filled according to the volume ratio of 1:1-1:3; reaction lasts for 20-100 min so as to obtain a first layer of silicon dioxide thin-film; after 20-100 min, filling of silane and nitrous oxide is stopped, tetraisopropyltitanium and oxygen are filled according to the volume ratio of 1:1-1:2, and the temperature is adjusted to a second temperature; reaction lasts for 10-60 min so as to obtain a second layer of titanium dioxide thin-film; after reaction between tetraisopropyltitanium and oxygen, filling of tetraisopropyltitanium and oxygen is stopped, the temperature is adjusted to the first temperature, and silane and nitrous oxide are filled; and reaction lasts for 10-60 min so as to obtain a third layer of silicon dioxide thin-film. According to the invention, transmissivity of sunshine is reduced remarkably. The invention also provides a crystalline silicon wafer of the reflecting film obtained by the above method and a solar cell panel with the crystalline silicon wafer.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly, relate to a kind of method for preparing reflectance coating, the invention still further relates to a kind of its back of the body surface and be provided with the crystal silicon chip of the reflectance coating that utilizes said method to prepare, and there is the solar panel of above-mentioned crystal silicon chip.
Background technology
Along with deepening continuously that solar cell is studied, the emphasis of crystal silicon solar energy battery development is high efficiency and low cost.
The crystal silicon chip of conventional solar panel adopts the full aluminium aluminum back surface field of back up, its concrete production technology is: crystal silicon chip through making herbs into wool, spread, go PSG(Phospho Silicate Glass, the silicon oxide layer that contains higher phosphorous concentration, be called as phosphorosilicate glass) and positive form antireflective coating (one deck that the crystal silicon chip sensitive surface is coated with reduces the film of sunlight reflected) after, on its back of the body surface, one deck aluminium lamination is set, to improve open circuit voltage and short circuit current, i.e. full aluminium back surface field.Although adopt the structure of this kind of technique setting to have many good qualities, but because the alusil alloy back of the body surface that sintering forms is compound (compound: as a kind of mode that the minority carrier at the crystal silicon chip back side reduces) and aspect the back reflection effect to have certain limitation in minimizing, particularly the alusil alloy district itself is that the limitation of high recombination region is more obvious, and the aluminium back surface field is on the low side to the reflectivity of sunlight, long-wave response is poor, has limited the further raising of solar cell photoelectric conversion efficiency.
Under current technical merit, the development space that significantly improves the crystal silicon chip photoelectric conversion efficiency in the short time is not very large, so just need to aspect reducing production costs, make improvement.In order to reduce cost of material, people start to adopt thinner crystal silicon chip, and for the crystal silicon chip of sheet, on its back of the body surface, full aluminium back surface field only is set, not only limited the further raising of photoelectric conversion efficiency, also can be thinner because of crystal silicon chip itself, make sunlight easily from the back side transmissive of crystal silicon chip, reduced the efficiency of crystal silicon chip absorption sunlight.
In sum, how providing a kind of method for preparing reflectance coating, to realize the reducing transmissivity that crystal silicon chip is carried on the back surperficial sunlight, further improve the photoelectric conversion efficiency of crystal silicon chip, is current those skilled in the art's problem demanding prompt solution.
Summary of the invention
In view of this, the invention provides a kind of method for preparing reflectance coating, the transmissivity of to reduce crystal silicon chip, carrying on the back surperficial sunlight, further improve the photoelectric conversion efficiency of crystal silicon chip,
In order to achieve the above object, the invention provides following technical scheme:
A kind of method for preparing reflectance coating, prepare reflectance coating for the back of the body surface at crystal silicon chip, comprises the following steps:
11) will be through making herbs into wool, spread, go silicon oxide layer and front surface to form the crystal silicon chip that antireflective coating processes to be placed in reaction unit;
12) be filled with protective gas in reaction unit, the temperature setting in described reaction unit is set to 200 ℃-600 ℃, pressure is set to reaction pressure and to launched microwave in described reaction unit;
13) be filled with SiH in described reaction unit
4and N
2o, keep its volume ratio in the scope of 1:1-1:3;
14) sustained response 20min-100min, obtain ground floor SiO
2film;
15) treat SiH
4and N
2o reached described in step 14) after the reaction time, stopped being filled with SiH
4and N
2o, and be filled with Ti (OC in described reaction unit
3h
7)
4and O
2, keep its volume ratio in the scope of 1:1-1:2, and temperature be adjusted to 400 ℃-800 ℃; Sustained response 10min-60min, obtain second layer TiO
2film;
16) treat Ti (OC
3h
7)
4and O
2reach described in step 15) after the reaction time, stop being filled with Ti (OC
3h
7)
4and O
2, temperature is adjusted to 200 ℃-600 ℃, and repeats step 13); Sustained response 10min-60min, obtain the 3rd layer of SiO
2film.
Preferably, in the above-mentioned method for preparing reflectance coating, further comprising the steps of:
21) at described the 3rd layer of SiO
2etching contact hole on film;
22) one deck aluminium film is set on described contact hole.
Preferably, in the above-mentioned method for preparing reflectance coating, described contact hole is arranged on described the 3rd layer of SiO by the mode of laser ablation
2the surface of film.
Preferably, in the above-mentioned method for preparing reflectance coating, described aluminium film is arranged on described contact hole by the mode of silk screen printing.
Preferably, in the above-mentioned method for preparing reflectance coating, described reaction unit is Quartz stove tube.
Preferably, in the above-mentioned method for preparing reflectance coating, described protective gas is N
2.
Preferably, in the above-mentioned method for preparing reflectance coating, the scope of described reaction pressure is 0.02mbar-0.2mbar.
Preferably, in the above-mentioned method for preparing reflectance coating, the power of described microwave is 2500-3500W.
Based on the above-mentioned method for preparing reflectance coating provided, the present invention also provides a kind of crystal silicon chip, the back of the body surface of described crystal silicon chip is provided with reflectance coating, and described reflectance coating comprises ground floor SiO2 film, second layer TiO2 film and the 3rd layer of SiO2 film prepared by the described method for preparing reflectance coating of above-mentioned any one.The present invention also provides a kind of solar panel with above-mentioned crystal silicon chip.
In the method for preparing reflectance coating provided by the invention, adopt the english abbreviation of PECVD(Plasma Enhanced Chemical Vapour Deposition, plasma reinforced chemical vapour deposition, a kind of gas ionization that contains the film composed atom that makes by microwave or radio frequency etc., form plasma in part, and the plasma chemical activity is very strong, be easy to react, and deposit film on substrate, generally to be used for the technology of depositing multiple materials in semi-conductor industry, its process is: two or more gaseous state raw material are imported in a reative cell, then chemical reaction occurs in each other, form a kind of new material, and deposit on substrate surface.At this wherein, pressure in reative cell, the temperature of substrate, the flow rate of gas, gas is by the distance of substrate, the chemical analysis of gas, a kind of gas is with respect to the ratio of another kind of gas, the intermediate products role of reaction, and whether need the outer external energy source of other reative cell to accelerate or bring out the factor such as conceivable reaction all can the film generated to be impacted, in area of solar cell, substrate is crystal silicon chip) (dangling bonds that utilize ion in film that the defect of the crystal silicon chip of crystalline silicon material in sinking to the bottom caused are able to saturated the passivation that consists of three-layer thin-film in the preparation of the back of the body of crystal silicon chip surface of method, can make metal impurities lose that it is electroactive simultaneously, improve minority carrier lifetime, make the crystal silicon chip higher to the utilance of sunlight) structure: ground floor SiO
2film is under temperature at 200 ℃-600 ℃, pressure, microwave radio condition, passes into the SiH of proportion at 1:1-1:3
4and N
2o, reaction 20min-100min, obtain thickness at 10-100nm, the film that refractive index is 1-2, second layer TiO
2film is the temperature at 400 ℃-800 ℃, in identical pressure and microwave radio scope, passes into proportion at the Ti of 1:1-1:2 (OC
3h
7)
4and O
2, reaction 10min-60min, obtain thickness at 20-80nm, the film that refractive index is 1.5-2.5, the 3rd layer of SiO
2the preparation condition of film and ground floor SiO
2the preparation condition of film is identical, and obtaining thickness is 5nm-50nm, the film that refractive index is 2-3.
By the passivating structure formed by above three-layer thin-film, crystal silicon chip is carried on the back to surperficial dangling bonds and carry out passivation, improved the utilance of crystal silicon chip to sunlight, and the set-up mode of employing trilamellar membrane, make passivating structure along surperficial to carry on the back surperficial direction away from crystal silicon chip near the crystal silicon chip back of the body, refractive index successively from low to high, thickness successively from high to low, and then sunlight is formed to multipath reflection, farthest improve crystal silicon chip and carried on the back surperficial reflectivity, strengthened its absorbing again sunlight, with crystal silicon chip back of the body surface in prior art, full aluminium back surface field only being set compares, the transmissivity of sunlight significantly reduces, greatly improved the photoelectric conversion efficiency of crystal silicon chip.In addition, by the etching contact hole, the local aluminum back surface field that the aluminium film is set on contact hole and forms, with full aluminium back surface field, compare, because the high recombination region of aluminium back surface field reduces, it carries on the back the also corresponding reduction of impact of surperficial minority carrier lifetime on crystal silicon chip, further improved the photoelectric conversion efficiency of crystal silicon chip.
The accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, below will the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The flow chart for preparing the reflectance coating method that Fig. 1 provides for the embodiment of the present invention;
The structural representation of the crystal silicon chip that Fig. 2 provides for the embodiment of the present invention.
In above Fig. 1-Fig. 2:
Ground floor SiO
2film 1, second layer TiO
2film 2, the 3rd layer of SiO
2film 3, local aluminum back surface field 4, crystal silicon chip 5.
Embodiment
In order further to understand the present invention, below in conjunction with embodiment, the preferred embodiment for the present invention is described, but should be appreciated that these are described is in order to further illustrate the features and advantages of the present invention, rather than limiting to the claimed invention.
The invention provides a kind of method for preparing reflectance coating, reduced the transmissivity that crystal silicon chip is carried on the back surperficial sunlight, further improved the photoelectric conversion efficiency of crystal silicon chip, the present invention also provides a kind of its back of the body surface to have the crystal silicon chip of the reflectance coating prepared by said method, and the solar panel with this crystal silicon chip.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making under the creative work prerequisite the every other embodiment obtained, belong to the scope of protection of the invention.
The method for preparing reflectance coating that the embodiment of the present invention provides, prepare reflectance coating for the back of the body surface at crystal silicon chip 5, comprises the following steps:
S111 will be through making herbs into wool, spread, go silicon oxide layer and front surface to form the crystal silicon chip 5 that antireflective coating processes is placed in reaction unit;
S112 is filled with protective gas in reaction unit, and the temperature setting in reaction unit is set to 200 ℃-600 ℃, and pressure is set to reaction pressure and to launched microwave in reaction unit;
S113 is filled with SiH in reaction unit
4and N
2o, keep its volume ratio in the scope of 1:1-1:3;
S114 sustained response 20min-100min, obtain ground floor SiO
2film 1;
S115 treats SiH
4and N
2o reached in step S 114 after the reaction time, stopped being filled with SiH
4and N
2o, and be filled with Ti (OC in reaction unit
3h
7)
4and O
2, keep its volume ratio in the scope of 1:1-1:2, and temperature be adjusted to 400 ℃-800 ℃; Sustained response 10min-60min, obtain second layer TiO
2film 2;
S116 treats Ti (OC
3h
7)
4and O
2reach described in step S115 after the reaction time, stop being filled with Ti (OC
3h
7)
4and O
2, temperature is adjusted to 200 ℃-600 ℃, and repeating step S113; Sustained response 10min-60min, obtain the 3rd layer of SiO
2film 3.
In the method for preparing reflectance coating provided by the invention, adopt the english abbreviation of PECVD(Plasma Enhanced Chemical Vapour Deposition, plasma reinforced chemical vapour deposition, a kind of gas ionization that contains the film composed atom that makes by microwave or radio frequency etc., form plasma in part, and the plasma chemical activity is very strong, be easy to react, and deposit film on substrate, generally to be used for the technology of depositing multiple materials in semi-conductor industry, its process is: two or more gaseous state raw material are imported in a reative cell, then chemical reaction occurs in each other, form a kind of new material, and deposit on substrate surface.At this wherein, pressure in reative cell, the temperature of substrate, the flow rate of gas, gas is by the distance of substrate, the chemical analysis of gas, a kind of gas is with respect to the ratio of another kind of gas, the intermediate products role of reaction, and whether need the outer external energy source of other reative cell to accelerate or bring out the factor such as conceivable reaction all can the film generated to be impacted, in area of solar cell, substrate is crystal silicon chip 5) (dangling bonds that utilize ion in film that the defect of the crystal silicon chip 5 of crystalline silicon material in sinking to the bottom caused are able to saturated the passivation that consists of three-layer thin-film in the preparation of the back of the body of crystal silicon chip 5 surface of method, can make metal impurities lose that it is electroactive simultaneously, improve minority carrier lifetime, make the utilance of 5 pairs of sunlight of crystal silicon chip higher) structure: ground floor SiO
2film 1 is under temperature, certain pressure intensity and the certain microwave radio condition at 200 ℃-600 ℃, passes into proportion 1: the SiH of 1-1:3
4and N
2o, reaction 20min-100min, obtain thickness at 10-100nm, the film that refractive index is 1-2, second layer TiO
2film 2 is the temperature at 400 ℃-800 ℃, in identical pressure and microwave radio scope, passes into proportion at the Ti of 1:1-1:2 (OC
3h
7)
4and O
2, reaction 10min-60min, obtain thickness at 20-80nm, the film that refractive index is 1.5-2.5, the 3rd layer of SiO
2the preparation condition of film 3 and ground floor SiO
2the preparation condition of film 1 is identical, and obtain thickness, is 5-50nm, the film that refractive index is 2-3.
By the passivating structure formed by above three-layer thin-film, the surperficial dangling bonds of crystal silicon chip 5 back of the body are carried out to passivation, improved the utilance of 5 pairs of sunlight of crystal silicon chip, and the set-up mode of employing trilamellar membrane, make passivating structure along arriving away from the surperficial direction of crystal silicon chip 5 back of the body near crystal silicon chip 5 back of the body surfaces, refractive index successively from high to low, thickness successively from low to high, and then sunlight is formed to multipath reflection, farthest improved the surperficial reflectivity of crystal silicon chip 5 back of the body, strengthened its absorbing again sunlight, with 5 back of the body surfaces of crystal silicon chip in prior art, full aluminium back surface field only being set compares, the transmissivity of sunlight significantly reduces, greatly improved the photoelectric conversion efficiency of crystal silicon chip 5.
In order further to optimize technique scheme, in the method for preparing reflectance coating that the present embodiment provides, further comprising the steps of:
S221 is at the 3rd layer of SiO
2etching contact hole on film 3;
S222 arranges one deck aluminium film on contact hole.
In addition, by the etching contact hole, the local aluminum back surface field 4 that the aluminium film is set on contact hole and forms, with full aluminium back surface field, compare, because the high recombination region of aluminium back surface field reduces, the also corresponding reduction of impact of its surperficial minority carrier lifetime on crystal silicon chip 5 back of the body, further improved the photoelectric conversion efficiency of crystal silicon chip 5.
Concrete, contact hole is arranged on the 3rd layer of SiO by the mode of laser ablation
2film 3 surfaces, the aluminium film is arranged on contact hole by the mode of silk screen printing.Above two kinds of modes that contact hole and printing screen are set respectively, the two kinds of modes the most widely that adopt in the manufacture of solar cells process, in the situation that, without change production technology and production equipment, can realize easily technical scheme, can not increase extra production cost.
Preferably, in the method for preparing reflectance coating that the present embodiment provides, in step S111, reaction unit is Quartz stove tube.In area of solar cell, adopt the capital equipment of the standby film of PECVD legal system that two kinds of tubular diffusion furnace and flat diffusion furnaces are arranged, and the tubular diffusion furnace great majority adopt Quartz stove tube as deposition chambers, Quartz stove tube has the advantages such as high temperature resistant, corrosion-resistant, Heat stability is good, electrical insulating property be good, the job requirement that meets the deposition of reflective film that can be comparatively desirable because of it.
Further, in the method for preparing reflectance coating provided at the present embodiment, protective gas is N
2, reaction pressure scope be the 0.02mbar-0.2mbar(millibar, the barometric millimeter of mercury), the power of microwave is 2500-3500W.
Embodiment 1
The crystal silicon chip 5 of will be through making herbs into wool, spreading, going silicon oxide layer and front surface to form antireflective coating is placed in Quartz stove tube, is filled with N
2as protective gas, the temperature in Quartz stove tube is risen to 200 ℃, the pressure size rises to 0.02mbar, and the microwave that is 2500W to transmitting power in Quartz stove tube, by SiH
4and N
2o, with lasting being filled with in Quartz stove tube of volume ratio of 1:1, makes SiH
4and N
2chemical reaction occurs in O, and the reaction time continues 20min, with deposition ground floor SiO on the back of the body surface at crystal silicon chip 5
2film 1; After said process completes, temperature in Quartz stove tube is risen to 400 ℃, pressure size and microwave power still are respectively 0.02mbar and 2500W, with the volume ratio of 1:1, in Quartz stove tube, are filled with Ti (OC
3h
7)
4and O
2, the reaction time maintains 20min, and then obtains second layer TiO
2film 2; Second layer TiO
2after film 2 has deposited, the temperature in Quartz stove tube is adjusted to 200 ℃ again, pressure size and microwave power are still constant, and the same ratio with 1:1 is filled with SiH
4and N
2o, and sustained response 10min, finally obtain the 3rd layer of SiO
2film 3.
In above process, the ground floor SiO obtained
2the thickness of film 1 is 30nm, and refractive index is 1.1, the second layer TiO obtained
2the thickness of film 2 is 20nm, and refractive index is 1.7, the 3rd layer of SiO obtained
2the thickness of film 3 is 10nm, and refractive index is 2.The passivating structure that utilizes said method to obtain, its thickness reduces successively, and refractive index increases successively, improves the absorptivity of 5 pairs of sunlight of crystal silicon chip by the mode of multipath reflection, and then improves the photoelectric conversion efficiency of crystal silicon chip 5.
The crystal silicon chip 5 of will be through making herbs into wool, spreading, going silicon oxide layer and front surface to form the antireflective thickness is placed in Quartz stove tube, is filled with N
2as protective gas, the temperature in Quartz stove tube is risen to 300 ℃, the pressure size rises to 0.065mbar, and the microwave that is 2750W to transmitting power in Quartz stove tube, by SiH
4and N
2o, with lasting being filled with in Quartz stove tube of volume ratio of 1:1.5, makes SiH
4and N
2chemical reaction occurs in O, and the reaction time continues 40min, with deposition ground floor SiO on the back of the body surface at crystal silicon chip 5
2film 1; After said process completes, temperature in Quartz stove tube is risen to 500 ℃, pressure size and microwave power still are respectively 0.065mbar and 2750W, with the volume ratio of 1:1.25, in Quartz stove tube, are filled with Ti (OC
3h
7)
4and O
2, the reaction time maintains 30min, and then obtains second layer TiO
2film 2; Second layer TiO
2after film 2 has deposited, the temperature in Quartz stove tube is adjusted to 300 ℃ again, pressure size and microwave power are still constant, and the same ratio with 1:1.5 is filled with SiH
4and N
2o, and sustained response 20min, finally obtain the 3rd layer of SiO
2film 3.
In above process, the ground floor SiO obtained
2the thickness of film 1 is 50nm, and refractive index is 1.3, the second layer TiO obtained
2the thickness of film 2 is 35nm, and refractive index is 1.9, the 3rd layer of SiO obtained
2the thickness of film 3 is 20nm, and refractive index is 2.25.The passivating structure that utilizes said method to obtain, its thickness reduces successively, and refractive index increases successively, improves the absorptivity of 5 pairs of sunlight of crystal silicon chip by the mode of multipath reflection, and then improves the photoelectric conversion efficiency of crystal silicon chip 5.
The crystal silicon chip 5 of will be through making herbs into wool, spreading, going silicon oxide layer and front surface to form the antireflective thickness is placed in Quartz stove tube, is filled with N
2as protective gas, the temperature in Quartz stove tube is risen to 400 ℃, the pressure size rises to 0.11mbar, and the microwave that is 3000W to transmitting power in Quartz stove tube, by SiH
4and N
2o, with lasting being filled with in Quartz stove tube of volume ratio of 1:2, makes SiH
4and N
2chemical reaction occurs in O, and the reaction time continues 60min, with deposition ground floor SiO on the back of the body surface at crystal silicon chip 5
2film 1; After said process completes, temperature in Quartz stove tube is risen to 600 ℃, pressure size and microwave power still are respectively 0.11mbar and 3000W, with the volume ratio of 1:1.5, in Quartz stove tube, are filled with Ti (OC
3h
7)
4and O
2, the reaction time maintains 40min, and then obtains second layer TiO
2film 2; Second layer TiO
2after film 2 has deposited, the temperature in Quartz stove tube is adjusted to 400 ℃ again, pressure size and microwave power are still constant, and the same ratio with 1:2 is filled with SiH
4and N
2o, and sustained response 30min, finally obtain the 3rd layer of SiO
2film 3.
In above process, the ground floor SiO obtained
2the thickness of film 1 is 70nm, and refractive index is 1.5, the second layer TiO obtained
2the thickness of film 2 is 50nm, and refractive index is 2.1, the 3rd layer of SiO obtained
2the thickness of film 3 is 30nm, and refractive index is 2.5.The passivating structure that utilizes said method to obtain, its thickness reduces successively, and refractive index increases successively, improves the absorptivity of 5 pairs of sunlight of crystal silicon chip by the mode of multipath reflection, and then improves the photoelectric conversion efficiency of crystal silicon chip 5.
Embodiment 4
The crystal silicon chip 5 of will be through making herbs into wool, spreading, going silicon oxide layer and front surface to form the antireflective thickness is placed in Quartz stove tube, is filled with N
2as protective gas, the temperature in Quartz stove tube is risen to 500 ℃, the pressure size rises to 0.155mbar, and the microwave that is 3250W to transmitting power in Quartz stove tube, by SiH
4and N
2o, with lasting being filled with in Quartz stove tube of volume ratio of 1:2.5, makes SiH
4and N
2chemical reaction occurs in O, and the reaction time continues 80min, with deposition ground floor SiO on the back of the body surface at crystal silicon chip 5
2film 1; After said process completes, temperature in Quartz stove tube is risen to 700 ℃, pressure size and microwave power still are respectively 0.155mbar and 3250W, with the volume ratio of 1:1.75, in Quartz stove tube, are filled with Ti (OC
3h
7)
4and O
2, the reaction time maintains 50min, and then obtains second layer TiO
2film 2; Second layer TiO
2after film 2 has deposited, the temperature in Quartz stove tube is adjusted to 500 ℃ again, pressure size and microwave power are still constant, and the same ratio with 1:2.5 is filled with SiH
4and N
2o, and sustained response 40min, finally obtain the 3rd layer of SiO
2film 3.
In above process, the ground floor SiO obtained
2the thickness of film 1 is 90nm, and refractive index is 1.8, the second layer TiO obtained
2the thickness of film 2 is 65nm, and refractive index is 2.3, the 3rd layer of SiO obtained
2the thickness of film 3 is 45nm, and refractive index is 2.75.The passivating structure that utilizes said method to obtain, its thickness reduces successively, and refractive index increases successively, improves the absorptivity of 5 pairs of sunlight of crystal silicon chip by the mode of multipath reflection, and then improves the photoelectric conversion efficiency of crystal silicon chip 5.
The crystal silicon chip 5 of will be through making herbs into wool, spreading, going silicon oxide layer and front surface to form the antireflective thickness is placed in Quartz stove tube, is filled with N
2as protective gas, the temperature in Quartz stove tube is risen to 600 ℃, the pressure size rises to 0.2mbar, and the microwave that is 3500W to transmitting power in Quartz stove tube, by SiH
4and N
2o, with lasting being filled with in Quartz stove tube of volume ratio of 1:3, makes SiH
4and N
2chemical reaction occurs in O, and the reaction time continues 100min, with deposition ground floor SiO on the back of the body surface at crystal silicon chip 5
2film 1; After said process completes, temperature in Quartz stove tube is risen to 800 ℃, pressure size and microwave power still are respectively 0.2mbar and 3500W, with the volume ratio of 1:2, in Quartz stove tube, are filled with Ti (OC
3h
7)
4and O
2, the reaction time maintains 60min, and then obtains second layer TiO
2film 2; Second layer TiO
2after film 2 has deposited, the temperature in Quartz stove tube is adjusted to 600 ℃ again, pressure size and microwave power are still constant, and the same ratio with 1:3 is filled with SiH
4and N
2o, and sustained response 50min, finally obtain the 3rd layer of SiO
2film 3.
In above process, the ground floor SiO obtained
2the thickness of film 1 is 100nm, and refractive index is 2, the second layer TiO obtained
2the thickness of film 2 is 80nm, and refractive index is 2.5, the 3rd layer of SiO obtained
2the thickness of film 3 is 50nm, and refractive index is 3.The passivating structure that utilizes said method to obtain, its thickness reduces successively, and refractive index increases successively, improves the absorptivity of 5 pairs of sunlight of crystal silicon chip by the mode of multipath reflection, and then improves the photoelectric conversion efficiency of crystal silicon chip 5.
The method for preparing reflectance coating based on providing in above-described embodiment, the embodiment of the present invention also provides a kind of crystal silicon chip 5, the back of the body surface of this crystal silicon chip 5 is provided with the reflectance coating that utilizes said method to prepare, and the embodiment of the present invention also provides a kind of solar panel with this crystal silicon chip 5.
Because this solar panel and crystal silicon chip 5 thereof have the reflectance coating that utilizes method that above-described embodiment provides to prepare, so the beneficial effect that this solar panel and crystal silicon chip 5 thereof are brought by the method for preparing reflectance coating please refer to corresponding part in above-described embodiment, does not repeat them here.
To the above-mentioned explanation of the disclosed embodiments, make professional and technical personnel in the field can realize or use the present invention.Multiple modification to these embodiment will be apparent for those skilled in the art, and General Principle as defined herein can be in the situation that do not break away from the spirit or scope of the present invention, realization in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. a method for preparing reflectance coating, prepare reflectance coating for the back of the body surface at crystal silicon chip (5), it is characterized in that, comprises the following steps:
11) will be through making herbs into wool, spread, go silicon oxide layer and front surface to form the crystal silicon chip (5) that antireflective coating processes to be placed in reaction unit;
12) be filled with protective gas in reaction unit, the temperature setting in described reaction unit is set to 200 ℃-600 ℃, pressure is set to reaction pressure and to launched microwave in described reaction unit;
13) be filled with SiH in described reaction unit
4and N
2o, keep both volume ratios 1: 1-1: in 3 scope;
14) sustained response 20min-100min, obtain ground floor SiO
2film (1);
15) treat SiH
4and N
2o reached in step 14) after the reaction time, stopped being filled with SiH
4and N
2o, and be filled with Ti (OC in described reaction unit
3h
7)
4and O
2, keep its volume ratio 1: 1-1: in 2 scope, and temperature to be adjusted to 400 ℃-800 ℃; Sustained response 10min-60min, obtain second layer TiO
2film (2);
16) treat Ti (OC
3h
7)
4and O
2reach described in step 15) after the reaction time, stop being filled with Ti (OC
3h
7)
4and O
2, temperature is adjusted to 200 ℃-600 ℃, and repeats step 13); Sustained response 10min-60min, obtain the 3rd layer of SiO
2film (3).
2. the method for preparing reflectance coating according to claim 1, is characterized in that, further comprising the steps of:
21) at described the 3rd layer of SiO
2the upper etching contact hole of film (3);
22) one deck aluminium film is set on described contact hole.
3. the method for preparing reflectance coating according to claim 2, is characterized in that, described contact hole is arranged on described the 3rd layer of SiO by the mode of laser ablation
2the surface of film (3).
4. the method for preparing reflectance coating according to claim 3, is characterized in that, described aluminium film is arranged on described contact hole by the mode of silk screen printing.
5. the method for preparing reflectance coating according to claim 1, is characterized in that, described reaction unit is Quartz stove tube.
6. the method for preparing reflectance coating according to claim 5, is characterized in that, described protective gas is N
2.
7. the method for preparing reflectance coating according to claim 6, is characterized in that, the scope of described reaction pressure is 0.02mbar-0.2mbar.
8. the method for preparing reflectance coating according to claim 7, is characterized in that, the power of described microwave is 2500-3500W.
9. a crystal silicon chip, it is characterized in that, the back of the body surface of described crystal silicon chip is provided with reflectance coating, and described reflectance coating comprises ground floor SiO2 film (1), second layer TiO2 film (2) and the 3rd layer of SiO2 film (3) prepared by the described method for preparing reflectance coating of any one in the claims 1-8.
10. a solar panel, is characterized in that, it has the crystal silicon chip described in claim 9.
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| CN104362188A (en) * | 2014-10-30 | 2015-02-18 | 广东爱康太阳能科技有限公司 | Solar cell with potential induction decay resistance and method for manufacturing solar cell |
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| CN101540350A (en) * | 2009-04-30 | 2009-09-23 | 中山大学 | Process for preparing back point-contact crystalline-silicon solar cells |
| US20100126571A1 (en) * | 2008-10-23 | 2010-05-27 | Kizilyalli Isik C | Photovoltaic device with increased light trapping |
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| US20100126571A1 (en) * | 2008-10-23 | 2010-05-27 | Kizilyalli Isik C | Photovoltaic device with increased light trapping |
| CN101540350A (en) * | 2009-04-30 | 2009-09-23 | 中山大学 | Process for preparing back point-contact crystalline-silicon solar cells |
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Cited By (2)
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| CN104362188A (en) * | 2014-10-30 | 2015-02-18 | 广东爱康太阳能科技有限公司 | Solar cell with potential induction decay resistance and method for manufacturing solar cell |
| CN104362188B (en) * | 2014-10-30 | 2018-02-06 | 广东爱康太阳能科技有限公司 | A kind of solar cell resisting potential induced degradation and preparation method thereof |
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