CN103474504B - A kind of prepare the method for reflectance coating, solar panel and crystal silicon chip thereof - Google Patents
A kind of prepare the method for reflectance coating, solar panel and crystal silicon chip thereof Download PDFInfo
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Abstract
The invention provides the method preparing reflectance coating, including: being filled with protective gas in reaction unit, pressurize and launch microwave, reaction unit is adjusted to the first temperature, be filled with silane and nitrous oxide, volume ratio is 1: 11: 3；React 20 100 minutes, obtain ground floor silica membrane；After reaching the time, stopping being filled with silane and nitrous oxide, be filled with tetra isopropyl titanium and oxygen, volume ratio is 1: 11: 2, and temperature is adjusted to the second temperature；React 10 60 minutes, obtain second layer titanium deoxid film；After tetra isopropyl titanium and oxygen reach the time, stopping being filled with tetra isopropyl titanium and oxygen, temperature is adjusted to the first temperature, is filled with silane and nitrous oxide；React 10 60 minutes, obtain third layer silica membrane.The present invention makes the transmissivity of sunlight significantly reduce, and additionally provides the crystal silicon chip of a kind of reflectance coating having and being obtained by said method, and has the solar panel of this crystal silicon chip.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly, it relates to a kind of reflectance coating prepared
Method, the invention still further relates to its back surface a kind of and is provided with the crystal of the reflectance coating utilizing said method to prepare
Silicon chip, and there is the solar panel of above-mentioned crystal silicon chip.
Background technology
Along with solar cell research is deepened continuously, crystal silicon solar energy battery development it is important that high
Efficiency and low cost.
The crystal silicon chip of conventional solar panel uses back up full aluminium aluminum back surface field, and it specifically produces
Technique is: crystal silicon chip through making herbs into wool, spread, (Phospho Silicate Glass, containing relatively to remove PSG
The silicon oxide layer of high phosphorus concentration, is referred to as phosphorosilicate glass) and front forms antireflective coating, and (crystal silicon chip is subject to
The film of one layer of minimizing sunlight reflection that light face is coated with) after, one layer of aluminium lamination is set at its back surface, to improve
Open-circuit voltage and short circuit current, i.e. full aluminium back surface field.The structure arranged although with this kind of technique has the most excellent
Point, but owing to the alusil alloy back surface of sintering formation is reducing compound (being combined: the crystal silicon chip back side
Minority carrier reduce a kind of mode) and back reflection effect aspect there is certain limitation, particularly aluminium
Silicon alloy district itself is that the limitation of high recombination region becomes apparent from, and aluminium back surface field is inclined to the reflectivity of sunshine
Low, long-wave response is poor, limits the further raising of solar cell photoelectric conversion efficiency.
In the current state-of-the-art, the development of crystal silicon chip photoelectric transformation efficiency is greatly improved in the short time
Space is not very big, so being accomplished by terms of reducing production cost making improvement.In order to reduce raw material
This, people begin with thinner crystal silicon chip, and for the crystal silicon chip of sheet, carry on the back at it
Surface only arranges full aluminium back surface field, not only limits the further raising of photoelectric transformation efficiency, also can be because of
Crystal silicon chip itself is relatively thin so that sunshine easily from the back side transmissive of crystal silicon chip, reduces crystalline substance
Body silicon chip absorbs the efficiency of sunshine.
In sum, how to provide a kind of method preparing reflectance coating, to realize reducing crystal silicon chip back of the body table
The transmissivity of surface sunlight, improves the photoelectric transformation efficiency of crystal silicon chip further, is current this area skill
Art personnel's problem demanding prompt solution.
Summary of the invention
In view of this, the invention provides a kind of method preparing reflectance coating, to reduce crystal silicon chip back of the body table
The transmissivity of surface sunlight, improves the photoelectric transformation efficiency of crystal silicon chip further,
In order to achieve the above object, the present invention provides following technical scheme:
A kind of method preparing reflectance coating, for preparing reflectance coating at the back surface of crystal silicon chip, including with
Lower step:
11) by through making herbs into wool, spread, go silicon oxide layer and front surface to form the crystal that antireflective coating processes
Silicon chip is placed in reaction unit；
12) in reaction unit, it is filled with protective gas, the temperature in described reaction unit is set to
200 DEG C-600 DEG C, pressure is set to 0.02mbar-0.2mbar and launches micro-in described reaction unit
Ripple；
13) in described reaction unit, it is filled with SiH4And N2O, keeps its volume ratio 1:1-1:3's
In the range of；
14) sustained response 20min-100min, obtains ground floor SiO2Film；
15) SiH is treated4And N2O reaches step 14) described in after the reaction time, stop being filled with SiH4With
N2O, and in described reaction unit, it is filled with Ti (OC3H7)4And O2, keep its volume ratio at 1:1-1:2
In the range of, and temperature is adjusted to 400 DEG C-800 DEG C；Sustained response 10min-60min, obtains
Two layers of TiO2Film；
16) Ti (OC is treated3H7)4And O2Reach step 15) described in after the reaction time, stop being filled with
Ti(OC3H7)4And O2, temperature is adjusted to 200 DEG C-600 DEG C, and repeats step 13)；Sustained response
10min-60min, obtains third layer SiO2Film, described ground floor SiO2Film, the described second layer
TiO2Film and described third layer SiO2Film is along close described crystal silicon chip back surface to away from described crystal
The direction of silicon chip back surface, the most from low to high, thickness is the most from high to low for refractive index.
Preferably, in the above-mentioned method preparing reflectance coating, further comprising the steps of:
21) in described third layer SiO2Contact hole is etched on film；
22) one layer of aluminium film is set on described contact hole.
Preferably, in the above-mentioned method preparing reflectance coating, described contact hole sets by the way of laser ablation
Put in described third layer SiO2The surface of film.
Preferably, in the above-mentioned method preparing reflectance coating, described aluminium film is arranged by the way of serigraphy
On described contact hole.
Preferably, in the above-mentioned method preparing reflectance coating, described reaction unit is Quartz stove tube.
Preferably, in the above-mentioned method preparing reflectance coating, described protective gas is N2。
Preferably, in the above-mentioned method preparing reflectance coating, the power of described microwave is 2500-3500W.
The method preparing reflectance coating based on above-mentioned offer, present invention also offers a kind of crystal silicon chip, institute
The back surface stating crystal silicon chip is provided with reflectance coating, and described reflectance coating includes by described in above-mentioned any one
The ground floor SiO for preparing of the method preparing reflectance coating2Film, second layer TiO2Film and third layer
SiO2Film.Present invention also offers a kind of solar panel with above-mentioned crystal silicon chip.
In the method preparing reflectance coating that the present invention provides, use PECVD (Plasma Enhanced
The english abbreviation of Chemical Vapour Deposition, plasma reinforced chemical vapour deposition, a kind of by
Microwave or radio frequency etc. make the gas ionization containing film composed atom, are being partially formed plasma, and etc.
Ion chemistry activity is the strongest, it is easy to react, and goes out film at deposition on substrate, is semiconductor work
Being commonly used to the technology of depositing multiple materials in industry, its process is: by former for two or more gaseous state
Material imports in a reative cell, and then they occur chemical reaction each other, is formed a kind of new
Material, and deposit on substrate surface.Among these, the pressure in reative cell, the temperature of substrate, gas
The flow rate of body, gas by the distance of substrate, the chemical analysis of gas, a kind of gas relative to separately
A kind of ratio of gas, the intermediate products role of reaction and the need of other reative cell outside
External energy source accelerates or induces the factors such as conceivable reaction all to impact the film generated,
In area of solar cell, substrate is crystal silicon chip) method crystal silicon chip back surface prepare by three layers
Passivation (the defect in utilizing the ion in film to make the crystal silicon chip of crystalline silicon material sink to the bottom that film is constituted
The dangling bonds caused are able to saturated, and metal impurities can be made to lose, and it is electroactive simultaneously, improves minority carrier
The sub-life-span so that crystal silicon chip is higher to the utilization rate of sunlight) structure: ground floor SiO2Film be
Under the conditions of the temperature of 200 DEG C-600 DEG C, pressure, microwave radio, it is passed through proportion 1:1-1:3's
SiH4And N2O, reacts 20min-100min, obtains thickness at 10-100nm, and refractive index is 1-2's
Film；Second layer TiO2Film is the temperature at 400 DEG C-800 DEG C, identical pressure and microwave radio model
In enclosing, it is passed through the proportion Ti (OC at 1:1-1:23H7)4And O2, react 10min-60min,
To thickness at 20-80nm, refractive index is the film of 1.5-2.5；Third layer SiO2The preparation condition of film with
Ground floor SiO2The preparation condition of film is identical, and obtaining thickness is 5nm-50nm, and refractive index is 2-3's
Film.
By the passivating structure being made up of above three-layer thin-film, the dangling bonds of crystal silicon chip back surface are carried out blunt
Change, improve the crystal silicon chip utilization rate to sunlight, and use the set-up mode of trilamellar membrane so that be blunt
Change structure along near crystal silicon chip back surface to the direction away from crystal silicon chip back surface, refractive index successively by
Low to high, thickness the most from high to low, and then forms multipath reflection to sunlight, farthest improves
The reflectivity of crystal silicon chip back surface, enhances its re-absorption to sunlight, with crystalline silicon in prior art
Sheet back surface only arranges full aluminium back surface field and compares, and the transmissivity of sunlight significantly reduces, and substantially increases crystalline silicon
The photoelectric transformation efficiency of sheet.Additionally, by etching contact hole, contact hole arranges aluminium film and is formed
Local aluminum back surface field, compared with full aluminium back surface field, because the high recombination region of aluminium back surface field reduces, it is to crystalline silicon
The impact of the minority carrier lifetime of sheet back surface reduces the most accordingly, further increases the light of crystal silicon chip
Photoelectric transformation efficiency.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to reality
Execute the required accompanying drawing used in example or description of the prior art to be briefly described, it should be apparent that below,
Accompanying drawing in description is only some embodiments of the present invention, for those of ordinary skill in the art,
On the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
The flow chart preparing reflectance coating method that Fig. 1 provides for the embodiment of the present invention；
The structural representation of the crystal silicon chip that Fig. 2 provides for the embodiment of the present invention.
In figure 1 above-Fig. 2:
Ground floor SiO2Film 1, second layer TiO2Film 2, third layer SiO2Film 3, local aluminum back surface field
4, crystal silicon chip 5.
Detailed description of the invention
In order to be further appreciated by the present invention, below in conjunction with embodiment, the preferred embodiment for the present invention is retouched
State, but it is to be understood that these descriptions are intended merely to further illustrate the features and advantages of the present invention, and
It it not limiting to the claimed invention.
The invention provides a kind of method preparing reflectance coating, reduce crystal silicon chip back surface sunshine
Transmissivity, further increases the photoelectric transformation efficiency of crystal silicon chip, present invention also offers its back of the body a kind of
Surface has the crystal silicon chip of the reflectance coating prepared by said method, and has this crystal silicon chip too
Sun can cell panel.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out
Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of the present invention, and
It is not all, of embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art are not doing
Go out the every other embodiment obtained under creative work premise, broadly fall into the scope of protection of the invention.
The method preparing reflectance coating that the embodiment of the present invention provides, for the back surface system at crystal silicon chip 5
Standby reflectance coating, comprises the following steps:
S111 by through making herbs into wool, spread, go silicon oxide layer and front surface to form the crystal that antireflective coating processes
Silicon chip 5 is placed in reaction unit；
S112 is filled with protective gas in reaction unit, the temperature in reaction unit is set to 200 DEG C-
600 DEG C, pressure is set to reaction pressure and launches microwave in reaction unit；
S113 is filled with SiH in reaction unit4And N2O, keeps its volume ratio in the scope of 1:1-1:3
In；
S114 sustained response 20min-100min, obtains ground floor SiO2Film 1；
S115 treats SiH4And N2O reaches in step S114 after the reaction time, stops being filled with SiH4With
N2O, and in reaction unit, it is filled with Ti (OC3H7)4And O2, keep its volume ratio 1:1-1:2's
In the range of, and temperature is adjusted to 400 DEG C-800 DEG C；Sustained response 10min-60min, obtains second
Layer TiO2Film 2；
S116 treats Ti (OC3H7)4And O2Reach described in step S115 after the reaction time, stop being filled with
Ti(OC3H7)4And O2, temperature is adjusted to 200 DEG C-600 DEG C, and repeats step S113；Sustained response
10min-60min, obtains third layer SiO2Film 3.
In the method preparing reflectance coating that the present invention provides, use PECVD (Plasma Enhanced
The english abbreviation of Chemical Vapour Deposition, plasma reinforced chemical vapour deposition, a kind of by
Microwave or radio frequency etc. make the gas ionization containing film composed atom, are being partially formed plasma, and etc.
Ion chemistry activity is the strongest, it is easy to react, and goes out film at deposition on substrate, is semiconductor work
Being commonly used to the technology of depositing multiple materials in industry, its process is: by former for two or more gaseous state
Material imports in a reative cell, and then they occur chemical reaction each other, is formed a kind of new
Material, and deposit on substrate surface.Among these, the pressure in reative cell, the temperature of substrate, gas
The flow rate of body, gas by the distance of substrate, the chemical analysis of gas, a kind of gas relative to separately
A kind of ratio of gas, the intermediate products role of reaction and the need of other reative cell outside
External energy source accelerates or induces the factors such as conceivable reaction all to impact the film generated,
In area of solar cell, substrate is crystal silicon chip 5) method crystal silicon chip 5 back surface prepare by
The passivation that three-layer thin-film is constituted is (in utilizing the ion in film to make the crystal silicon chip 5 of crystalline silicon material sink to the bottom
The dangling bonds that cause of defect be able to saturated, metal impurities can be made to lose, and it is electroactive simultaneously, improves few
Number carrier lifetime so that crystal silicon chip 5 is higher to the utilization rate of sunlight) structure: ground floor SiO2Thin
Film 1 is under the conditions of temperature, certain pressure intensity and certain microwave radio of 200 DEG C-600 DEG C, is passed through ratio
Scope is at the SiH of 1:1-1:34And N2O, reacts 20min-100min, obtains thickness at 10-
100nm, refractive index is the film of 1-2；Second layer TiO2Film 2 is the temperature at 400 DEG C-800 DEG C,
In the range of identical pressure and microwave radio, it is passed through the proportion Ti (OC at 1:1-1:23H7)4With
O2, to react 10min-60min, obtain thickness at 20-80nm, refractive index is the film of 1.5-2.5；The
Three layers of SiO2The preparation condition of film 3 and ground floor SiO2The preparation condition of film 1 is identical, and obtains
Thickness is 5-50nm, and refractive index is the film of 2-3.
By the passivating structure being made up of above three-layer thin-film, the dangling bonds of crystal silicon chip 5 back surface are carried out
Passivation, improves the crystal silicon chip 5 utilization rate to sunlight, and uses the set-up mode of trilamellar membrane, make
Obtain passivating structure edge near crystal silicon chip 5 back surface to the direction away from crystal silicon chip 5 back surface, refraction
The most from low to high, thickness the most from high to low, and then forms multipath reflection, at utmost to rate to sunlight
The reflectivity that improve crystal silicon chip 5 back surface, enhance its re-absorption to sunlight, with existing skill
In art, crystal silicon chip 5 back surface only arranges full aluminium back surface field and compares, and the transmissivity of sunlight significantly reduces, significantly
Improve the photoelectric transformation efficiency of crystal silicon chip 5.
In order to optimize technique scheme further, in the method preparing reflectance coating that the present embodiment provides,
Further comprising the steps of:
S221 is in third layer SiO2Contact hole is etched on film 3；
S222 arranges one layer of aluminium film on contact hole.
Additionally, by etching contact hole, contact hole arranges aluminium film and the local aluminum back surface field 4 that formed,
Compared with full aluminium back surface field, because the high recombination region of aluminium back surface field reduces, it is to crystal silicon chip 5 back surface
The impact of minority carrier lifetime reduces the most accordingly, further increases the opto-electronic conversion effect of crystal silicon chip 5
Rate.
Concrete, contact hole is arranged on third layer SiO by the way of laser ablation2Film 3 surface, aluminium
Film is arranged on contact hole by the way of serigraphy.Both the above is respectively provided with contact hole and printing silk
The mode of net, is to use most commonly used two ways during manufacture of solar cells, without change
In the case of production technology and production equipment, in that context it may be convenient to realize technical scheme, will not increase extra
Production cost.
Preferably, in the method preparing reflectance coating that the present embodiment provides, reaction unit in step S111
For Quartz stove tube.In area of solar cell, the capital equipment using PECVD to prepare film has
Tubular diffusion furnace and flat diffusion furnace two kinds, and tubular diffusion furnace great majority use Quartz stove tube as heavy
Long-pending chamber, Quartz stove tube because of its have high temperature resistant, corrosion-resistant, that Heat stability is good, electrical insulating property are good etc. is excellent
Point, it is possible to the ideal job requirement meeting deposition of reflective film.
Further, in the method preparing reflectance coating that the present embodiment provides, protective gas is N2, anti-
The pressure is answered in the range of 0.02mbar-0.2mbar (millibar, the barometric millimeter of mercury), the power of microwave to be
2500-3500W。
Embodiment 1
By through making herbs into wool, spread, the crystal silicon chip 5 that goes silicon oxide layer and front surface to form antireflective coating is put
Put in Quartz stove tube, be filled with N2As protective gas, the temperature in Quartz stove tube is risen to 200 DEG C,
Pressure size rises to 0.02mbar, and launching power in Quartz stove tube is the microwave of 2500W, by SiH4
And N2O is with lasting being filled with in Quartz stove tube of volume ratio of 1:1 so that SiH4And N2Oization
Learning reaction, the reaction time continues 20min, to deposit ground floor SiO on the back surface of crystal silicon chip 52
Film 1；After said process completes, temperature in Quartz stove tube is risen to 400 DEG C, pressure size and microwave
Power is still respectively 0.02mbar and 2500W, is filled with in Quartz stove tube with the volume ratio of 1:1
Ti(OC3H7)4And O2, reaction time maintenance 20min, and then obtain second layer TiO2Film 2；Second
Layer TiO2After film 2 has deposited, the temperature in Quartz stove tube is adjusted to again 200 DEG C, pressure size
The most constant with microwave power, the same ratio with 1:1 is filled with SiH4And N2O, and sustained response 10
Min, finally gives third layer SiO2Film 3.
In above procedure, the ground floor SiO obtained2The thickness of film 1 is 30nm, and refractive index is
1.1, the second layer TiO obtained2The thickness of film 2 is 20nm, and refractive index is 1.7, the 3rd obtained
Layer SiO2The thickness of film 3 is 10nm, and refractive index is 2.Utilize the passivation knot that said method obtains
Structure, its thickness is sequentially reduced, and refractive index increases successively, improves crystalline silicon by the way of multipath reflection
The sheet 5 absorptivity to sunlight, and then improve the photoelectric transformation efficiency of crystal silicon chip 5.
Embodiment 2
By through making herbs into wool, spread, go silicon oxide layer and front surface to form the crystal silicon chip 5 of antireflective thickness
It is placed in Quartz stove tube, is filled with N2As protective gas, the temperature in Quartz stove tube is risen to
300 DEG C, pressure size rises to 0.065mbar, and launching power in Quartz stove tube is the micro-of 2750W
Ripple, by SiH4And N2O is with lasting being filled with in Quartz stove tube of volume ratio of 1:1.5 so that SiH4With
N2There is chemical reaction in O, the reaction time continues 40min, to deposit on the back surface of crystal silicon chip 5
Ground floor SiO2Film 1；After said process completes, temperature in Quartz stove tube is risen to 500 DEG C, pressure
Size and microwave power are still respectively 0.065mbar and 2750W, with the volume ratio of 1:1.25 to stone
English boiler tube is filled with Ti (OC3H7)4And O2, reaction time maintenance 30min, and then obtain the second layer
TiO2Film 2；Second layer TiO2After film 2 has deposited, the temperature in Quartz stove tube is adjusted to again
300 DEG C, pressure size and microwave power are the most constant, and the same ratio with 1:1.5 is filled with SiH4With
N2O, and sustained response 20min, finally give third layer SiO2Film 3.
In above procedure, the ground floor SiO obtained2The thickness of film 1 is 50nm, and refractive index is
1.3, the second layer TiO obtained2The thickness of film 2 is 35nm, and refractive index is 1.9, the 3rd obtained
Layer SiO2The thickness of film 3 is 20nm, and refractive index is 2.25.Utilize the passivation knot that said method obtains
Structure, its thickness is sequentially reduced, and refractive index increases successively, improves crystalline silicon by the way of multipath reflection
The sheet 5 absorptivity to sunlight, and then improve the photoelectric transformation efficiency of crystal silicon chip 5.
Embodiment 3
By through making herbs into wool, spread, go silicon oxide layer and front surface to form the crystal silicon chip 5 of antireflective thickness
It is placed in Quartz stove tube, is filled with N2As protective gas, the temperature in Quartz stove tube is risen to
400 DEG C, pressure size rises to 0.11mbar, and launching power in Quartz stove tube is the microwave of 3000W,
By SiH4And N2O is with lasting being filled with in Quartz stove tube of volume ratio of 1:2 so that SiH4And N2O
Chemical reaction occurs, and the reaction time continues 60min, to deposit first on the back surface of crystal silicon chip 5
Layer SiO2Film 1；After said process completes, temperature in Quartz stove tube is risen to 600 DEG C, pressure size
Still 0.11mbar and 3000W it is respectively, with the volume ratio of 1:1.5 to Quartz stove tube with microwave power
In be filled with Ti (OC3H7)4And O2, reaction time maintenance 40min, and then obtain second layer TiO2Film
2；Second layer TiO2After film 2 has deposited, the temperature in Quartz stove tube is adjusted to 400 DEG C again,
Pressure size and microwave power are the most constant, and the same ratio with 1:2 is filled with SiH4And N2O, and hold
Continuous reaction 30min, finally gives third layer SiO2Film 3.
In above procedure, the ground floor SiO obtained2The thickness of film 1 is 70nm, and refractive index is
1.5, the second layer TiO obtained2The thickness of film 2 is 50nm, and refractive index is 2.1, the 3rd obtained
Layer SiO2The thickness of film 3 is 30nm, and refractive index is 2.5.Utilize the passivation knot that said method obtains
Structure, its thickness is sequentially reduced, and refractive index increases successively, improves crystalline silicon by the way of multipath reflection
The sheet 5 absorptivity to sunlight, and then improve the photoelectric transformation efficiency of crystal silicon chip 5.
Embodiment 4
By through making herbs into wool, spread, go silicon oxide layer and front surface to form the crystal silicon chip 5 of antireflective thickness
It is placed in Quartz stove tube, is filled with N2As protective gas, the temperature in Quartz stove tube is risen to
500 DEG C, pressure size rises to 0.155mbar, and launching power in Quartz stove tube is the micro-of 3250W
Ripple, by SiH4And N2O is with lasting being filled with in Quartz stove tube of volume ratio of 1:2.5 so that SiH4With
N2There is chemical reaction in O, the reaction time continues 80min, to deposit on the back surface of crystal silicon chip 5
Ground floor SiO2Film 1；After said process completes, temperature in Quartz stove tube is risen to 700 DEG C, pressure
Size and microwave power are still respectively 0.155mbar and 3250W, with the volume ratio of 1:1.75 to stone
English boiler tube is filled with Ti (OC3H7)4And O2, reaction time maintenance 50min, and then obtain the second layer
TiO2Film 2；Second layer TiO2After film 2 has deposited, the temperature in Quartz stove tube is adjusted to again
500 DEG C, pressure size and microwave power are the most constant, and the same ratio with 1:2.5 is filled with SiH4With
N2O, and sustained response 40min, finally give third layer SiO2Film 3.
In above procedure, the ground floor SiO obtained2The thickness of film 1 is 90nm, and refractive index is
1.8, the second layer TiO obtained2The thickness of film 2 is 65nm, and refractive index is 2.3, the 3rd obtained
Layer SiO2The thickness of film 3 is 45nm, and refractive index is 2.75.Utilize the passivation knot that said method obtains
Structure, its thickness is sequentially reduced, and refractive index increases successively, improves crystalline silicon by the way of multipath reflection
The sheet 5 absorptivity to sunlight, and then improve the photoelectric transformation efficiency of crystal silicon chip 5.
Embodiment 5
By through making herbs into wool, spread, go silicon oxide layer and front surface to form the crystal silicon chip 5 of antireflective thickness
It is placed in Quartz stove tube, is filled with N2As protective gas, the temperature in Quartz stove tube is risen to
600 DEG C, pressure size rises to 0.2mbar, and launching power in Quartz stove tube is the microwave of 3500W,
By SiH4And N2O is with lasting being filled with in Quartz stove tube of volume ratio of 1:3 so that SiH4And N2O
Chemical reaction occurs, and the reaction time continues 100min, with deposition the on the back surface of crystal silicon chip 5
One layer of SiO2Film 1；After said process completes, temperature in Quartz stove tube being risen to 800 DEG C, pressure is big
Little and microwave power is still respectively 0.2mbar and 3500W, with the volume ratio of 1:2 to Quartz stove tube
In be filled with Ti (OC3H7)4And O2, reaction time maintenance 60min, and then obtain second layer TiO2Film
2；Second layer TiO2After film 2 has deposited, the temperature in Quartz stove tube is adjusted to 600 DEG C again,
Pressure size and microwave power are the most constant, and the same ratio with 1:3 is filled with SiH4And N2O, and hold
Continuous reaction 50min, finally gives third layer SiO2Film 3.
In above procedure, the ground floor SiO obtained2The thickness of film 1 is 100nm, and refractive index is 2,
The second layer TiO obtained2The thickness of film 2 is 80nm, and refractive index is 2.5, the third layer obtained
SiO2The thickness of film 3 is 50nm, and refractive index is 3.Utilize the passivating structure that said method obtains,
Its thickness is sequentially reduced, and refractive index increases successively, improves crystal silicon chip 5 by the way of multipath reflection
Absorptivity to sunlight, and then improve the photoelectric transformation efficiency of crystal silicon chip 5.
Based on the method preparing reflectance coating provided in above-described embodiment, the embodiment of the present invention additionally provides one
Planting crystal silicon chip 5, the back surface of this crystal silicon chip 5 is provided with the reflectance coating utilizing said method to prepare,
The embodiment of the present invention additionally provides a kind of solar panel with this crystal silicon chip 5.
Owing to this solar panel and crystal silicon chip 5 thereof have the method system utilizing above-described embodiment to provide
Standby reflectance coating, so this solar panel and crystal silicon chip 5 thereof are brought by the method preparing reflectance coating
Beneficial effect refer to corresponding part in above-described embodiment, do not repeat them here.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses
The present invention.Multiple amendment to these embodiments will be aobvious and easy for those skilled in the art
Seeing, generic principles defined herein can be in the situation without departing from the spirit or scope of the present invention
Under, realize in other embodiments.Therefore, the present invention is not intended to be limited to these realities shown in this article
Execute example, and be to fit to the widest scope consistent with principles disclosed herein and features of novelty.
Claims (9)
1. the method preparing reflectance coating, prepares reflectance coating for the back surface at crystal silicon chip (5),
It is characterized in that, comprise the following steps:
11) by through making herbs into wool, spread, go silicon oxide layer and front surface to form the crystal that antireflective coating processes
Silicon chip (5) is placed in reaction unit；
12) in reaction unit, it is filled with protective gas, the temperature in described reaction unit is set to 200 DEG C
-600 DEG C, pressure is set to 0.02mbar-0.2mbar and launches microwave in described reaction unit；
13) in described reaction unit, it is filled with SiH4And N2O, keeps both volume ratios 1:1-1:3's
In the range of；
14) sustained response 20min-100min, obtains ground floor SiO2Film (1)；
15) SiH is treated4And N2O reaches step 14) in after the reaction time, stop being filled with SiH4And N2O,
And in described reaction unit, it is filled with Ti (OC3H7)4And O2, keep its volume ratio in the scope of 1:1-1:2
In, and temperature is adjusted to 400 DEG C-800 DEG C；Sustained response 10min-60min, obtains second layer TiO2
Film (2)；
16) Ti (OC is treated3H7)4And O2Reach step 15) described in after the reaction time, stop being filled with
Ti(OC3H7)4And O2, temperature is adjusted to 200 DEG C-600 DEG C, and repeats step 13)；Sustained response 10min
-60min, obtains third layer SiO2Film (3), described ground floor SiO2Film (1), the described second layer
TiO2Film (2) and described third layer SiO2Film (3) is along near described crystal silicon chip (5) back surface
To away from the direction of described crystal silicon chip (5) back surface, refractive index the most from low to high, thickness successively by
High to Low.
The method preparing reflectance coating the most according to claim 1, it is characterised in that also include following
Step:
21) in described third layer SiO2Film etches contact hole on (3)；
22) one layer of aluminium film is set on described contact hole.
The method preparing reflectance coating the most according to claim 2, it is characterised in that described contact hole
Described third layer SiO it is arranged on by the way of laser ablation2The surface of film (3).
The method preparing reflectance coating the most according to claim 3, it is characterised in that described aluminium film leads to
The mode crossing serigraphy is arranged on described contact hole.
The method preparing reflectance coating the most according to claim 1, it is characterised in that described reaction fills
It is set to Quartz stove tube.
The method preparing reflectance coating the most according to claim 5, it is characterised in that described protection gas
Body is N2。
The method preparing reflectance coating the most according to claim 1, it is characterised in that described microwave
Power is 2500-3500W.
8. a crystal silicon chip, it is characterised in that the back surface of described crystal silicon chip is provided with reflectance coating,
Described reflectance coating includes by the method preparing reflectance coating described in any one in the claims 1-7
The ground floor SiO of preparation2Film (1), second layer TiO2Film (2) and third layer SiO2Film (3).
9. a solar panel, it is characterised in that it has the crystalline silicon described in claim 8
Sheet.
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