CN103474338B - Make the method for high evenness grid lines - Google Patents
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- CN103474338B CN103474338B CN201310432448.6A CN201310432448A CN103474338B CN 103474338 B CN103474338 B CN 103474338B CN 201310432448 A CN201310432448 A CN 201310432448A CN 103474338 B CN103474338 B CN 103474338B
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Abstract
Make a method for high evenness grid lines, comprising: direct deposition of polycrystalline silicon film successively on silicon substrate, be then directly coated with spun-on carbon film and siliceous hard film and the first photoresist successively; Perform exposure and develop to form the structure of first grid lines in the first photoresist film; The curing materials of coating containing sulfur alcohol compound on the first photoresist, the structure of first grid lines in crosslinking curing first photoresist, heating makes curing materials and the first photoresist surface reaction form the barrier film being insoluble to the second photoresist; The first photoresist is after hardening coated with the second photoresist; First Line end cutting pattern is formed in the second photoresist film; With the second photoresist film for mask, etching barrier film and first grid lines, form the second line end cutting pattern; With remaining barrier film and first grid lines for mask, continue to etch siliceous hard film, spun-on carbon film and polysilicon membrane successively, form the structure of second grid lines.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of method making high evenness grid lines.
Background technology
Along with the integrated level of semiconductor chip improves constantly, the characteristic size of transistor constantly reduces, increasing to the challenge of photoetching process.Traditional photoetching process adopts the organic antireflection film (bottomanti-reflectivecoating, BARC) based on macromolecular material to improve the ability of photoetching process usually.Figure 1A is the structural diagrams of silicon substrate 1, organic antireflection film 2 and photoresist 3.Organic antireflection film can also expand the scope adjusted of etching technics, improves the uniformity of the rear graphic structure of etching.
After entering 45 nm technology node, be more and more difficult to based on the organic antireflection film of conventional polymer material the requirement meeting photoetching process and the rear graphic structure uniformity of etching.The amorphous c film that new substitution material comprises Spun-on carbon and utilizes plasma reinforced chemical vapour deposition (plasmaenhancedchemicalvapordeposition, PECVD) method to make.Compared with amorphous carbon technique, Spun-on carbon does not need extra board, has the advantages such as low cost, fast, the level and smooth concavo-convex substrate ability of film forming speed be strong.Usual employing spun-on carbon film 21 and the siliceous hard mask film 22 of spin coating are arranged in pairs or groups and are substituted traditional organic antireflection film 2 (Figure 1B).The collocation of spun-on carbon film 21 and the siliceous hard mask film 22 of spin coating has comparatively antiradar reflectivity and the rear line edge roughness (line-edgeroughness of improvement etching, LER) advantage, meets the requirement of photoetching process and the rear graphic structure uniformity of etching well.
Grid live width is one of major parameter of semiconductor device.Reduce live width can improve integrated level and reduce device size.The photoetching process making little live width grid can produce line end and shrink (line-endshortening).The line end that Fig. 2 A illustrates grid bargraphs shrinks A.Grid live width is less, and more A is serious in line end contraction.Traditional method carries out optical approach effect correction (opticalproximitycorrection, OPC) to correct line end on the photomask to shrink (Fig. 2 B).When line end shrinks too serious, the correction of required optical approach effect correction is too large, to such an extent as to adjacent two line end figures form overlap on the photomask, cause optical proximity correction method to lose efficacy.In this case, just to have to increase by step line end cutting technique (line-endcut).Gate line end cutting technique is after the grid lines forming overlapping line end, and the line end cutting photoetching increased by utilizing cutting mask B and line end cutting etching technics cut off overlapping adjacent two line ends (Fig. 2 C).
After device size micro enters into 32 nm technology node, single photolithographic exposure cannot meet the resolution made needed for intensive linear array figure.Double-pattern (doublepatterning) forming technique is widely used in the intensive linear array figure of the following technology node of making 32 nanometer as solving the main method of this technical barrier by large quantity research.Fig. 3 A – Fig. 3 E illustrates the process that double-pattern forming technique makes intensive linear array figure.Needing to make on the silicon substrate 1 of intensive linear array figure, deposition substrate film 9 and hard mask 10, then the first photoresist 3 (Fig. 3 A) is coated with, after exposure, development, etching, in hard mask 10, form the first litho pattern 11 (Fig. 3 B), the characteristic size ratio of its lines and groove is 1:3.This silicon chip is coated with the second photoresist (5) (Fig. 3 C), in the second photoresist 5 film, the second litho pattern 12 (Fig. 3 D) is formed after exposure and development, the characteristic size ratio of its lines and groove is also 1:3, but its position and the first litho pattern 11 interlock.Continue to be etched on silicon substrate and form second litho pattern 12 (Fig. 3 E) staggered with the first litho pattern 11.The combination of the first litho pattern 11 and the second litho pattern 12 constitutes the intensive linear array figure that target lines and trench features dimension scale are 1:1.
Double-pattern forming technique needs Twi-lithography and etching, i.e. photoetching-etching-photoetching-etching.Its cost is far longer than traditional single exposure forming technique.Reduce one of cost direction becoming new technology development of double-pattern forming technique.After the first litho pattern (11) development, in same developing machine platform, solidify the method for the first litho pattern (11) in the first photoresist (3) at the first photoresist (3) upper coating solidification material.The double-pattern shaping process after the method is adopted to be photoetching (development solidification)-photoetching-etching.Eliminate the first etch step in former technique, thus significantly reduce the cost of double-pattern forming technique.This method is also referred to as double-exposure technique (doubleexposure).
The manufacturing process of minimum live width grid comprises grid lines photoetching-grid lines etching-gate line end-grain cutting and cuts photoetching-gate line end-grain cutting and cut the steps such as etching.
But the process more complicated of such scheme, production capacity low cost is high, and uniformity is limited.
Summary of the invention
Technical problem to be solved by this invention is for there is above-mentioned defect in prior art, a kind of manufacture craft that can simplify minimum live width gate line bar is provided, improve production capacity and reduce cost of manufacture, improving photolithographic process capability and the method for requirement of the graphic structure uniformity after etching can be met.
According to the present invention, provide a kind of method making high evenness grid lines, it comprises:
First step: direct deposition of polycrystalline silicon film successively on silicon substrate, is then directly coated with spun-on carbon film and the first photoresist successively;
Second step: perform exposure and develop to form the structure of first grid lines in the first photoresist film;
Third step: in the same developing machine platform identical with the developing process of second step, the curing materials (Thiol) of coating containing sulfur alcohol compound on the first photoresist, the structure of first grid lines in crosslinking curing first photoresist, heating makes curing materials and the first photoresist surface reaction form the barrier film being insoluble to the second photoresist;
4th step: the first photoresist is after hardening coated with the second photoresist;
5th step: perform exposure and develop to form First Line end cutting pattern in the second photoresist film;
6th step: with the second photoresist film for mask, etching barrier film and first grid lines, form the second line end cutting pattern;
7th step: with remaining barrier film and first grid lines for mask, continues to etch spun-on carbon film and polysilicon membrane successively, and removes remaining spun-on carbon film, finally form the structure of second grid lines at layer polysilicon film.
Preferably, the first photoresist can select the photoresist that can form dura mater; Preferably, the first photoresist is a kind of photoresist in silane-group containing (silyl), silicon alkoxyl (siloxyl) and cage type siloxanes (silsesquioxane).
Preferably, the silicone content scope of the first photoresist, for being more than or equal to 15wt%, being preferably more than or equaling 30wt%.
Preferably, the first photoresist and the anti-etching of the second photoresist force rate can be more than or equal to 1.5:1.
Preferably, the main component of curing materials is sulfur alcohol compound, and other compositions can comprise crosslinking catalyst and surfactant.
Preferably, the concentration range of the main component sulfur alcohol compound of curing materials is 0.1wt% to 100wt%; Preferably, 0.5% to 10wt%.
Preferably, the Material selec-tion of crosslinking catalyst is based on activity of cross-linking reaction requirement; Preferably, crosslinking catalyst is the non-nucleophilic type tertiary amine (Tertiaryamine) being dissolved in organic solvent, and its concentration range is 0.1wt% to 20wt%.Preferably, 0.5% to 5wt%.
Preferably, the Material selec-tion of surfactant is dissolubility based on cross-linked material solution and reactivity requirement.Preferably, surfactant is the nonionic surface active agent being dissolved in organic solvent, and its concentration range is 50ppm to 10000ppm, preferably, and 100ppm to 1000ppm.
Preferably, the acid compound in acid solution, can be one or more in polyacrylic acid, polyisobutene acid, polyvinylsulfonic acid, alkyl carboxylic acid, aryl carboxylic acid, alkyl sulfonic acid, aryl sulfonic acid, but be not limited to these compounds.Acid compound concentration range is in an acidic solution 0.5wt% to 20wt%, preferably, and 1wt% to 10wt%.
Preferably, the scope of the heating-up temperature in third step is 30 DEG C to 180 DEG C, preferably, and 50 DEG C to 120 DEG C.; And/or the scope of the heating time in third step is 15 seconds to 600 seconds, preferred 30 seconds to 120 seconds.
Preferably, the thickness of spun-on carbon film is 20 nanometer to 300 nanometers.Preferably, the thickness of spun-on carbon film is 50 nanometer to 250 nanometers.
Further, preferably, the carbon content scope of spun-on carbon film, for being more than or equal to 60wt%, preferably, is more than or equal to 70wt%.
Thus, grid lines etching and gate line end-grain cutting are cut etching and are merged into a step etching by the present invention, substitute grid lines etching and gate line end-grain cutting in former technique and cut two step independent process of etching, and comprehensive Spun-on carbon technology, effectively can simplify the manufacture craft of minimum live width grid, the requirement of the rear graphic structure uniformity of etching can be met simultaneously, thus provide a kind of manufacture craft that can simplify minimum live width gate line bar, improve production capacity and reduce cost of manufacture, improve photolithographic process capability and the method for requirement of the graphic structure uniformity after etching can be met.
Accompanying drawing explanation
By reference to the accompanying drawings, and by reference to detailed description below, will more easily there is more complete understanding to the present invention and more easily understand its adjoint advantage and feature, wherein:
Figure 1A schematically shows the section of structure of silicon substrate, organic antireflection film and photoresist.
Figure 1B schematically shows silicon substrate, is coated with the section of structure of carbon C film, carbon containing silicon oxide film and photoresist.
The line end that Fig. 2 A illustrates grid bargraphs shrinks.
Fig. 2 B illustrates the vertical view utilizing optical approach effect correction to correct the contraction of grid line end on the photomask.
Fig. 2 C illustrates the vertical view utilizing gate line end cutting technique to make minimum live width grid.
Fig. 3 A – Fig. 3 E illustrates the process that double-pattern forming technique makes intensive linear array figure.
Fig. 4 A has been the section of structure of deposited polycrystalline silicon thin film, the silicon oxide film being coated with carbon C film and carbon containing and coating the first photoresist.
Fig. 4 B is the profile forming first grid linear in the film of the first photoresist.
Fig. 4 C forms the profile being insoluble to the barrier film of the second photoresist after solidification first photoresist.
Fig. 4 D has been the profile of coating second photoresist.
Fig. 4 E is the profile forming First Line end cutting pattern in the film of the second photoresist.
Fig. 4 F is the vertical view of formation second line end cutting pattern.
Fig. 4 G is the vertical view forming second grid lines structure at layer polysilicon film.
It should be noted that, accompanying drawing is for illustration of the present invention, and unrestricted the present invention.Note, represent that the accompanying drawing of structure may not be draw in proportion.Further, in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention clearly with understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
Fig. 4 A to Fig. 4 G schematically shows the method making high evenness grid lines according to the preferred embodiment of the invention.
Specifically, as shown in Fig. 4 A to Fig. 4 G, the method making high evenness grid lines according to the preferred embodiment of the invention comprises:
First step: direct deposition of polycrystalline silicon film 4 successively on silicon substrate 1, is then directly coated with spun-on carbon film 21 and siliceous hard film 22 and the first photoresist 3, as shown in Figure 4 A successively; Wherein, it should be noted that, siliceous hard film 22 and the first photoresist 3 are combined the mask as etching Spun-on carbon 21; But in fact, for the consideration reducing cost, can remove siliceous hard film 22(now, the thickness that also can be regarded as siliceous hard film is 0 nanometer); In fact, remove siliceous hard film 22 and still can realize each step following of the present invention, and can cost be reduced simultaneously.In the example not comprising siliceous hard film 22, the description that following and siliceous hard film 22 is relevant can be omitted.
Second step: perform exposure and develop to form the structure of first grid lines 31 in the first photoresist 3 film, as shown in Figure 4 B;
Third step: in the same developing machine platform identical with the developing process of second step, the curing materials of coating containing sulfur alcohol compound (Thiol) on the first photoresist 3, the structure of first grid lines 31 in crosslinking curing first photoresist 3, heating makes curing materials and the first photoresist 3 surface reaction form the barrier film 13 being insoluble to the second photoresist 5, preferably, the unnecessary curing materials containing sulfur alcohol compound can first with after acid solution process, remove with deionized water again, as shown in Figure 4 C;
4th step: the first photoresist 3 is after hardening coated with the second photoresist 5, as shown in Figure 4 D;
5th step: perform exposure and develop to form First Line end cutting pattern 51 in the second photoresist 5 film, as shown in Figure 4 E;
6th step: with the second photoresist 5 film for mask, etching barrier film 13 and first grid lines 31, form the second line end cutting pattern 52, as illustrated in figure 4f;
7th step: with remaining barrier film 13 and first grid lines 31 for mask, continue to etch siliceous hard film 22, spun-on carbon film 21 and polysilicon membrane 4 successively, and remove remaining siliceous hard film 22 and spun-on carbon film 21, finally in the structure of polysilicon membrane 4 layers of formation second grid lines 41, as shown in Figure 4 G.
Preferably, the first photoresist 3 can select the photoresist that can form dura mater; Preferably, the first photoresist 3 is a kind of photoresists in silane-group containing (silyl), silicon alkoxyl (siloxyl) and cage type siloxanes (silsesquioxane).Preferably, the silicone content scope of the first photoresist, for being more than or equal to 15wt%, preferably, is more than or equal to 30wt%.
Preferably, the first photoresist 3 and the anti-etching of the second photoresist 5 force rate can be more than or equal to 1.5:1.
Preferably, the main component of curing materials is sulfur alcohol compound (Thiol), and other compositions can include but not limited to crosslinking catalyst and surfactant.
Preferably, the concentration range of the main component sulfur alcohol compound of curing materials is 0.1wt% to 100wt%; Preferably, 0.5% to 10wt%.
Preferably, the Material selec-tion of crosslinking catalyst is based on activity of cross-linking reaction requirement; Preferably, crosslinking catalyst is the non-nucleophilic type tertiary amine (Tertiaryamine) being dissolved in organic solvent, and its concentration range is 0.1wt% to 20wt%.Preferably, 0.5% to 5wt%.
Preferably, the Material selec-tion of surfactant is dissolubility based on cross-linked material solution and reactivity requirement.Preferably, surfactant is the nonionic surface active agent being dissolved in organic solvent, and its concentration range is 50ppm to 10000ppm, preferably, and 100ppm to 1000ppm.
Preferably, the acid compound in acid solution, can be one or more in polyacrylic acid, polyisobutene acid, polyvinylsulfonic acid, alkyl carboxylic acid, aryl carboxylic acid, alkyl sulfonic acid, aryl sulfonic acid, but be not limited to these compounds.Acid compound concentration range is in an acidic solution 0.5wt% to 20wt%, preferably, and 1wt% to 10wt%.
Preferably, the scope of the heating-up temperature in third step is 30 DEG C to 180 DEG C, preferably, and 50 DEG C to 120 DEG C.
Preferably, the scope of the heating time in third step is 15 seconds to 600 seconds, preferably, and 30 seconds to 120 seconds.
Preferably, the thickness of spun-on carbon film 21 is 20 nanometer to 300 nanometers.Preferably, the thickness of spun-on carbon film 21 is 50 nanometer to 250 nanometers.
Further, preferably, the carbon content scope of spun-on carbon film 21, for being more than or equal to 60wt%, preferably, is more than or equal to 70wt%.
Preferably, the thickness of siliceous hard film 22 is 0 nanometer to 20 nanometer.
Further, preferably, the silicone content scope of siliceous hard film 22, for being more than or equal to 15wt%, preferably, is more than or equal to 30wt%.
Thus, grid lines etching and gate line end-grain cutting are cut etching and are merged into a step etching by the present invention, substitute grid lines etching and gate line end-grain cutting in former technique and cut two step independent process of etching, and comprehensive Spun-on carbon technology, effectively can simplify the manufacture craft of minimum live width grid, the requirement of the rear graphic structure uniformity of etching can be met simultaneously, thus provide a kind of manufacture craft that can simplify minimum live width gate line bar, improve production capacity and reduce cost of manufacture, improve photolithographic process capability and the method for requirement of the graphic structure uniformity after etching can be met.
Be understandable that, although the present invention with preferred embodiment disclose as above, but above-described embodiment and be not used to limit the present invention.For any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the technology contents of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (9)
1. make a method for high evenness grid lines, it is characterized in that comprising:
First step: direct deposition of polycrystalline silicon film successively on silicon substrate, is then directly coated with spun-on carbon film and the first photoresist successively;
Second step: perform exposure and develop to form the structure of first grid lines in the first photoresist film;
Third step: in the same developing machine platform identical with the developing process of second step, the curing materials of coating containing sulfur alcohol compound on the first photoresist, the structure of first grid lines in crosslinking curing first photoresist, heating makes curing materials and the first photoresist surface reaction form the barrier film being insoluble to the second photoresist;
4th step: the first photoresist is after hardening coated with the second photoresist;
5th step: perform exposure and develop to form First Line end cutting pattern in the second photoresist film;
6th step: with the second photoresist film for mask, etching barrier film and first grid lines, form the second line end cutting pattern;
7th step: with remaining barrier film and first grid lines for mask, continues to etch spun-on carbon film, polysilicon membrane successively, and removes remaining spun-on carbon film, finally form the structure of second grid lines at layer polysilicon film.
2. the method for making high evenness grid lines according to claim 1, it is characterized in that, the photoresist that can form dura mater selected by first photoresist, first photoresist is a kind of photoresist in silane-group containing, silicon alkoxyl and cage type siloxanes, and the silicone content scope of the first photoresist is for being more than or equal to 15wt%.
3. the method for making high evenness grid lines according to claim 1 and 2, is characterized in that, the first photoresist and the anti-etching of the second photoresist force rate can be more than or equal to 1.5:1.
4. the method for making high evenness grid lines according to claim 1 and 2, is characterized in that, the main component of curing materials is sulfur alcohol compound, and the concentration range of the main component sulfur alcohol compound of curing materials is 0.1wt% to 100wt%.
5. the method for making high evenness grid lines according to claim 1 and 2, it is characterized in that, his composition of curing materials comprises crosslinking catalyst and surfactant, and crosslinking catalyst is the non-nucleophilic type tertiary amine being dissolved in organic solvent, and its concentration range is 0.1wt% to 20wt%.
6. the method for making high evenness grid lines according to claim 1 and 2, it is characterized in that, his composition of curing materials comprises crosslinking catalyst and surfactant, and surfactant is the nonionic surface active agent being dissolved in organic solvent, and its concentration range is 50ppm to 10000ppm.
7. the method for making high evenness grid lines according to claim 1 and 2, it is characterized in that, the acid compound in acid solution is one or more in polyacrylic acid, polyisobutene acid, polyvinylsulfonic acid, alkyl carboxylic acid, aryl carboxylic acid, alkyl sulfonic acid, aryl sulfonic acid; And acid compound concentration range is in an acidic solution 0.5wt% to 20wt%.
8. the method for making high evenness grid lines according to claim 1 and 2, is characterized in that, the scope of the heating-up temperature in third step is 30 DEG C to 180 DEG C; And/or the scope of the heating time in third step is 15 seconds to 600 seconds.
9. the method for making high evenness grid lines according to claim 1 and 2, is characterized in that, the thickness of spun-on carbon film is 20 nanometer to 300 nanometers; The carbon content scope of spun-on carbon film is for being more than or equal to 60wt%.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101030539A (en) * | 2006-02-27 | 2007-09-05 | 台湾积体电路制造股份有限公司 | Method of making semiconductor device |
| CN102651312A (en) * | 2011-02-24 | 2012-08-29 | 中芯国际集成电路制造(上海)有限公司 | Method for forming gate electrode |
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| JP5446648B2 (en) * | 2008-10-07 | 2014-03-19 | 信越化学工業株式会社 | Pattern formation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101030539A (en) * | 2006-02-27 | 2007-09-05 | 台湾积体电路制造股份有限公司 | Method of making semiconductor device |
| CN102651312A (en) * | 2011-02-24 | 2012-08-29 | 中芯国际集成电路制造(上海)有限公司 | Method for forming gate electrode |
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