CN103681234A - Method for forming self-alignment duplex pattern - Google Patents
Method for forming self-alignment duplex pattern Download PDFInfo
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- CN103681234A CN103681234A CN201210333005.7A CN201210333005A CN103681234A CN 103681234 A CN103681234 A CN 103681234A CN 201210333005 A CN201210333005 A CN 201210333005A CN 103681234 A CN103681234 A CN 103681234A
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- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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Abstract
The invention provides a method for forming self-alignment duplex pattern. The method comprises the following steps: providing a material layer to be etched, forming a sacrificial photoresist layer on the material layer to be etched, curing the sacrificial photoresist layer, forming a first mask pattern on the side wall surface of the sacrificial photoresist layer, and removing the sacrificial photoresist layer. As the sacrificial photoresist layer is cured, the hardness of the sacrificial photoresist layer is increased, and during the process of forming the first mask pattern, the sacrificial photoresist layer does not deform under the stress generated by the first mask material layer, so that the side wall of the sacrificial photoresist layer is still perpendicular to the surface of the material layer to be etched, and finally, the side wall of the etched pattern which is formed by etching the material layer to be etched has a better profile.
Description
Technical field
The present invention relates to semiconductor technology, particularly a kind of formation method of autoregistration double-pattern.
Background technology
In field of semiconductor manufacture, photoresist material for mask image being transferred to one or more layers material layer, for example, is transferred to mask image in metal level, dielectric layer or Semiconductor substrate.But along with constantly dwindling of the characteristic size of semiconductor technology, the mask pattern that utilizes photoetching process to form small-feature-size in material layer becomes more and more difficult.
In order to improve the integrated level of semiconductor device, industry has proposed multiple double-pattern technique, and wherein, autoregistration double-pattern (Self-Aligned Double Patterning, SADP) technique is wherein a kind of.Fig. 1 to Fig. 6 be a kind of autoregistration double-pattern that utilizes of prior art for mask carries out the method for etching to semiconductor structure, specifically comprise:
Please refer to Fig. 1, Semiconductor substrate 10 is provided, on Semiconductor substrate 10 surfaces, form material layer 20 to be etched, on described material layer to be etched 20 surfaces, form bottom anti-reflection layer 40, on described bottom anti-reflection layer 40 surfaces, form photoresist layer 50;
Please refer to Fig. 2, described photoresist layer is carried out to exposure imaging, form and sacrifice photoresist layer 55, the described sacrifice photoresist layer 55 of take is mask, and bottom anti-reflection layer is carried out to etching, forms and sacrifices bottom anti-reflection layer 45;
Please refer to Fig. 3, on described material layer to be etched 20 surfaces, sacrifice photoresist layer 55 and sacrifice the sidewall surfaces of bottom anti-reflection layer 45 and form hard mask layer 60, sacrifice the top surface of photoresist layer 55;
Please refer to Fig. 4, described hard mask layer is returned to etching, until expose the top surface of described material layer to be etched 20 surfaces and sacrifice photoresist layer 55, in described sacrifice photoresist layer 55, sacrifice bottom anti-reflection layer 45 sidewall surfaces, form side walls 65;
Please refer to Fig. 5, remove described sacrifice photoresist layer and sacrifice bottom anti-reflection layer;
Please refer to Fig. 6, using described side wall 65 as mask, described material layer 20 to be etched is carried out to etching.
Manyly about autoregistration double-pattern technique, please refer to the american documentation literature that publication number is US2009/0146322A1.
But inventor finds, utilize the sidewall pattern of the etching figure that said method etching material layer to be etched forms poor.
Summary of the invention
The problem that the present invention solves is to provide a kind of formation method of autoregistration double-pattern, utilizes the sidewall pattern of the final etching figure forming of described method better.
For addressing the above problem, technical solution of the present invention provides a kind of formation method of autoregistration double-pattern, comprising: material layer to be etched is provided; On described material layer to be etched, form and sacrifice photoresist layer; Described sacrifice photoresist layer is cured; Sidewall surfaces at described sacrifice photoresist layer forms the first mask pattern; Remove described sacrifice photoresist layer.
Optionally, described curing process is Implantation curing process, utilizes described Implantation curing process that the photoresist of top and sidewall in sacrifice photoresist layer is become and solidifies photoresist shell.
Optionally, the ion injecting in described Implantation curing process is H, B, BF
2, BF
3, BF
4, P, As, In, C, wherein one or more of Ge combination.
Optionally, the dosage range injecting in described Implantation curing process is 10E13atom/cm
2~ 10E16atom/cm
2, the energy range of injection is 1KeV ~ 500KeV, the angular range of injection is-70 ~ 70 degree.
Optionally, the technique that forms described sacrifice photoresist layer comprises: in described material surface to be etched, form photoresist layer, described photoresist layer is carried out to exposure imaging, form and sacrifice photoresist layer.
Optionally, the technique that forms described the first mask pattern comprises: on described material layer to be etched, sacrifice photoresist layer surface, form the first mask material layer, described the first mask material layer is returned to etching, at described sacrifice photoresist layer sidewall, form the first mask pattern.
Optionally, the technique that forms described sacrifice photoresist layer comprises: in described material surface to be etched, form bottom anti-reflection layer, on described bottom anti-reflection layer surface, form photoresist layer, described photoresist layer is carried out to exposure imaging, form and sacrifice photoresist layer.
Optionally, the technique that forms described the first mask pattern comprises: on described bottom anti-reflection layer, sacrifice photoresist layer surface, form the first mask material layer, described the first mask material layer is returned to etching, at described sacrifice photoresist layer sidewall, form the first mask pattern.
Optionally, the technique that forms described sacrifice photoresist layer comprises: on described material layer to be etched, form bottom anti-reflection layer, on described bottom anti-reflection layer surface, form photoresist layer, described photoresist layer is carried out to exposure imaging, form and sacrifice photoresist layer, the described sacrifice photoresist layer of take is mask, and described bottom anti-reflection layer is carried out to etching, forms and sacrifices bottom anti-reflection layer.
Optionally, the technique that forms described sacrifice photoresist layer comprises: on described material layer to be etched, form the bottom anti-reflection layer that dissolves in developer solution, on described bottom anti-reflection layer surface, form photoresist layer, described bottom anti-reflection layer and photoresist layer are carried out to exposure imaging, form the sacrifice photoresist layer of sacrificing bottom anti-reflection layer and being positioned at described sacrifice bottom anti-reflection layer surface.
Optionally, the technique that forms described the first mask pattern comprises: the sidewall surfaces at described material surface to be etched, sacrifice bottom anti-reflection layer and sacrifice photoresist layer forms the first mask material layer, sacrifice the top surface of photoresist layer, described the first mask material layer is returned to etching, in described sacrifice bottom anti-reflection layer and the sidewall surfaces of sacrificing photoresist layer, form the first mask pattern.
Optionally, the material of described the first mask pattern is silica, silicon nitride, silicon oxynitride, titanium nitride, wherein one or more of tantalum nitride.
Optionally, also comprise, in described material surface to be etched, form the second mask material layer, on described the second mask material layer, form and sacrifice photoresist layer.
Optionally, form after described the first mask pattern, described the first mask pattern of take is mask, and described the second mask material layer is carried out to etching, forms the second mask pattern.
Optionally, remove described the first mask pattern, described the second mask pattern of take is mask, and described material layer to be etched is carried out to etching.
Optionally, the material of described the second mask material layer is silica, silicon nitride, carborundum, silicon oxynitride, amorphous carbon, polysilicon, hafnium oxide, titanium oxide, zirconia, titanium nitride, tantalum nitride, wherein one or more of titanium.
Optionally, also comprise, described the first mask pattern of take is mask, and described material layer to be etched is carried out to etching.
Compared with prior art, the present invention has the following advantages:
The embodiment of the present invention forms on described material layer to be etched sacrifices photoresist layer, described sacrifice photoresist layer is carried out to Implantation to be solidified, then the sidewall surfaces at described sacrifice photoresist layer forms the first mask pattern, remove after described sacrifice photoresist layer, utilize described the first mask pattern to carry out etching to material layer to be etched.Due to after described sacrifice photoresist layer is cured, the hardness of sacrificing photoresist layer improves, the stress that forms the first mask material layer generation in the first mask pattern process can not make to sacrifice photoresist layer generation deformation, make the sidewall of sacrificing photoresist layer still perpendicular to material surface to be etched, make the sidewall of follow-up the first mask pattern that is formed at described sacrifice photoresist layer sidewall surfaces perpendicular to material surface to be etched, finally material layer to be etched is carried out to the sidewall pattern of etching figure of etching formation better.
Accompanying drawing explanation
Fig. 1 to Fig. 6 is the cross-sectional view of the autoregistration double-pattern technique of prior art;
Fig. 7 is the schematic flow sheet of formation method of the autoregistration double-pattern of the embodiment of the present invention;
Fig. 8 to Figure 17 is the cross-sectional view of forming process of the autoregistration double-pattern of the embodiment of the present invention.
Embodiment
Because the sidewall pattern of the etching figure that utilizes above-mentioned technology etching material layer to be etched to form is poor, inventor finds through research, when at described sacrificial material layer and sacrifice photoresist layer surface formation hard mask layer, described hard mask layer can produce effect of stress to sacrificing photoresist layer, because the hardness of photoresist layer is little, even photoresist layer is also comparatively soft after front baking, the stress that described hard mask layer produces can make to sacrifice photoresist layer distortion, forming section is the trapezoidal sacrifice photoresist layer of class, make the sidewall of sacrificing photoresist layer be not orthogonal to material surface to be etched, make the follow-up side wall that is formed at described sacrifice photoresist layer sidewall surfaces be not orthogonal to material surface to be etched, the sidewall pattern of the etching figure of etching formation is finally carried out in impact to material layer to be etched.
For this reason, the present invention proposes a kind of formation method of autoregistration double-pattern, on described material layer to be etched, form and sacrifice photoresist layer, described sacrifice photoresist layer is cured, then the sidewall surfaces at described sacrifice photoresist layer forms the first mask pattern, remove after described sacrifice photoresist layer, utilize described the first mask pattern to carry out etching to material layer to be etched.Due to after described sacrifice photoresist layer is cured, the hardness of sacrificing photoresist layer improves, the stress that forms the first mask material layer generation in the first mask pattern process can not make to sacrifice photoresist layer generation deformation, make the sidewall of sacrificing photoresist layer still perpendicular to material surface to be etched, make the sidewall of follow-up the first mask pattern that is formed at described sacrifice photoresist layer sidewall surfaces perpendicular to material surface to be etched, finally material layer to be etched is carried out to the sidewall pattern of etching figure of etching formation better.
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here and implements with multiple, and those skilled in the art can do similar popularization without prejudice to intension of the present invention in the situation that.Therefore the present invention is not subject to the restriction of following public concrete enforcement.
Please refer to Fig. 7, the schematic flow sheet for the formation method of the autoregistration double-pattern of the embodiment of the present invention, specifically comprises:
Step S101, provides Semiconductor substrate, at described semiconductor substrate surface, forms material layer to be etched;
Step S102, forms the second mask material layer in described material surface to be etched;
Step S103, forms bottom anti-reflection layer on described the second mask material layer surface, on described bottom anti-reflection layer surface, forms photoresist layer;
Step S104, carries out exposure imaging to described photoresist layer, forms and sacrifices photoresist layer;
Step S105, carries out Implantation to described sacrifice photoresist layer, and the photoresist of top and sidewall in described sacrifice photoresist layer is formed and solidifies photoresist shell;
Step S106, forms the first mask material layer on described bottom anti-reflection layer, sacrifice photoresist layer surface, and described the first mask material layer is returned to etching, at described sacrifice photoresist layer sidewall, forms the first mask pattern;
Step S107, removes described sacrifice photoresist layer, and described the first mask pattern of take is mask, and described bottom anti-reflection layer, the second mask material layer are carried out to etching, forms the second mask pattern;
Step S108, removes described the first mask pattern, and described the second mask pattern of take is mask, and described material layer to be etched is carried out to etching, forms etching figure.
Concrete, please refer to Fig. 8 to Figure 17, be the structural representation of the forming process of the autoregistration double-pattern of the embodiment of the present invention.
Please refer to Fig. 8, Semiconductor substrate 100 is provided, on described Semiconductor substrate 100 surfaces, form material layer 110 to be etched.
Described Semiconductor substrate 100 is wherein a kind of such as silicon substrate, germanium substrate, silicon-Germanium substrate, silicon-on-insulator substrate (SOI), germanium on insulator (GOI) substrate, glass substrate.Described material layer to be etched 110 is wherein one or more such as silicon oxide layer, silicon nitride layer, polysilicon layer, low-K dielectric material, amorphous carbon, metal level.In the present embodiment, described material layer 110 to be etched is metal level, and the material of described metal level is aluminium, utilizes autoregistration double-pattern to form metal interconnecting wires for mask carries out etching to described metal level.In other embodiments, described material layer to be etched can also be Semiconductor substrate, utilizes autoregistration double-pattern, as mask, described Semiconductor substrate is carried out to etching.
Please refer to Fig. 9, on described material layer to be etched 110 surfaces, form the second mask material layer 120.
Described the second mask material layer 120 is single layer structure or multiple-level stack structure, the material of described the second mask material layer 120 is silica, silicon nitride, carborundum, silicon oxynitride, amorphous carbon, polysilicon, hafnium oxide, titanium oxide, zirconia, titanium nitride, tantalum nitride, wherein one or more of titanium, and the technique of described formation the second mask material layer 120 is chemical vapor deposition method or physical gas-phase deposition.The material of described the second mask material layer 120 is different from the material of material layer 110 to be etched, both have high etching selection ratio, while making the second mask material layer 120 forms described in later use the second mask pattern carry out etching to material layer 110 to be etched, the loss of the second mask pattern is less, is conducive to control pattern and the size of the etching figure of final formation.And the upper end of the first mask pattern forming due to follow-up time etching is not often regular rectangle, there is certain radian, directly utilize described the first mask pattern material layer to be etched to be carried out to the sidewall pattern that etching can affect the etching figure of final formation for mask, therefore, in the present embodiment, on described material layer to be etched 110 surfaces, form the second mask material layer 120, later use the second mask material layer 120 forms after the second mask pattern, removal is positioned at first mask pattern on its surface, take described upper end be shaped as rule rectangular the second mask pattern be mask, material layer to be etched described in etching, be conducive to control the pattern of the etching figure of final formation.And in the present embodiment, described the second mask material layer 120 comprises amorphous carbon layer and is positioned at the silicon oxide layer on described amorphous carbon layer surface, while amorphous carbon layer being carried out to etching due to dry etch process, amorphous carbon layer sidewall pattern is better, and the etching selection of described silicon oxide layer and metal level is larger, be conducive to the metal level that etch thicknesses is larger.
Please refer to Figure 10, on described the second mask material layer 120 surface, form bottom anti-reflection layer 130, on described bottom anti-reflection layer 130 surfaces, form photoresist layer 140.
For the light that prevents exposure by photoresist layer after interface between photoresist layer and substrate reflect, make the photoresist can not uniform exposure, in the present embodiment, on described the second mask material layer 120 surface, first form bottom anti-reflection layer (BARC) 130, then form photoresist layer 140 on described bottom anti-reflection layer 130 surfaces.In other embodiments, also can directly on described the second mask material layer surface, form photoresist layer.
In the present embodiment, described bottom anti-reflection layer 130 is inorganic bottom anti-reflection layer, such as silicon nitride, silicon oxynitride etc.In other embodiments, described bottom anti-reflection layer can also be organic bottom antireflective layer, such as polyimides etc.
Above-mentioned inorganic bottom anti-reflection layer and organic bottom antireflective layer are insoluble to developer solution after exposure technology, in other embodiments, the bottom anti-reflection layer adopting can also be dissolved in developer solution after overexposure, make a step exposure imaging technique form patterned sacrifice bottom anti-reflection layer simultaneously and be positioned at the sacrifice photoresist layer of sacrificing bottom anti-reflection layer surface, having saved a step etching and removed the technique of sacrificing bottom anti-reflection layer.
In the present embodiment, the technique that forms described inorganic bottom anti-reflection layer is chemical vapor deposition method or physical gas-phase deposition, and the technique that forms photoresist layer is spin coating technique.
In other embodiments, the technique that forms described bottom anti-reflection layer can also be spin coating technique.
In other embodiments, can in described material surface to be etched, not form the second mask material layer yet, directly in described material surface to be etched, form bottom anti-reflection layer, on described bottom anti-reflection layer surface, form photoresist layer, and to utilize follow-up the first mask pattern that is formed at material surface to be etched be mask, described material layer to be etched is carried out to etching.
Please refer to Figure 11, to described photoresist layer 140(with reference to Figure 10) carry out exposure imaging, on described bottom anti-reflection layer 130 surfaces, form patterned sacrifice photoresist layer 145.
After described photoresist layer 140 is exposed, utilize developer solution to develop to the photoresist layer of described exposure area, in the present embodiment, described developer solution is tetramethyl ammonium hydroxide solution.In the present embodiment, form after described patterned sacrifice photoresist layer 145, at described patterned sacrifice photoresist layer 145 sidewalls, form the first mask pattern.
In other embodiments, form after described patterned sacrifice photoresist layer, the described patterned sacrifice photoresist layer of take is mask, described bottom anti-reflection layer is carried out to etching, form patterned sacrifice bottom anti-reflection layer, the follow-up sidewall surfaces at described sacrifice bottom anti-reflection layer, sacrifice photoresist layer forms the first mask pattern.
In other embodiments, when described bottom anti-reflection layer is dissolved in developer solution after exposure, described photoresist layer, bottom anti-reflection layer are carried out to exposure imaging, obtain patterned sacrifice bottom anti-reflection layer simultaneously and be positioned at the sacrifice photoresist layer of sacrificing bottom anti-reflection layer surface, the follow-up sidewall surfaces at described sacrifice bottom anti-reflection layer, sacrifice photoresist layer forms the first mask pattern.
Please refer to Figure 12, described sacrifice photoresist layer 145 is carried out to Implantation, the photoresist of top and sidewall in described sacrifice photoresist layer 145 is formed and solidifies photoresist shell 146.
The design parameter of described Implantation curing process comprises: the ion of injection is H, B, BF
2, BF
3, BF
4, P, As, In, C, wherein one or more of Ge combination, the dosage range of Implantation is 10E13atom/cm
2~ 10E16atom/cm
2, the energy range of Implantation is 1KeV ~ 500KeV, the angular range of injection is-70 ~ 70 degree, makes not only at the top of sacrificing photoresist layer 145, also at the sidewall of sacrificing photoresist layer 145, forms and solidifies photoresist shell 146.Can again there is cross-linking reaction with photoresist molecule in the ion of described injection, make photoresist occur to solidify, and heavy dose of ion injecting can make the temperature of sacrificing photoresist surface raise, make the sacrifice photoresist layer dehydration of described Implantation, even there is carburizing reagent.Because the hardness of the photoresist of carbonization is far longer than the hardness of the photoresist that does not pass through Implantation, top and sidewall at described sacrifice photoresist layer form curing photoresist shell 146, the stress that the first mask material layer of follow-up formation produces can not produce deformation to described curing photoresist shell, just can not make sidewall distortion run-off the straight or the fold of described sacrifice photoresist layer yet, the sidewall of described sacrifice photoresist layer is still smooth smooth and perpendicular to material surface to be etched, the sidewall that makes follow-up the first mask pattern forming in described sacrifice photoresist layer sidewall surfaces is also smooth smooth and perpendicular to material surface to be etched.
Please refer to Figure 13, on described bottom anti-reflection layer 130 surfaces, sidewall and the top surface of sacrificing photoresist layer 145 form the first mask material layer 150.
The material of described the first mask material layer 150 is silica, silicon nitride, silicon oxynitride, titanium nitride, wherein one or more of tantalum nitride.The material of described the first mask material layer 150 is different from the material of the second mask material layer 120, both have high etching selection ratio, while making the first mask material layer 150 forms described in later use the first mask pattern carry out etching to the second mask material layer 120, the loss of the first mask pattern is less, is conducive to control pattern and the size of the etching figure of final formation.
In other embodiments, when described bottom anti-reflection layer is formed directly into described material surface to be etched, described first material of mask material layer is different with the material of material layer to be etched, both have high etching selection ratio, while making the first mask material layer forms described in later use the first mask pattern carry out etching to material layer to be etched, the loss of the first mask pattern is less, is conducive to control pattern and the size of the etching figure of final formation.
Because described the first mask material layer 150 is used to form the first mask pattern of autoregistration double-pattern, the width of described the first mask pattern depends on the thickness of the first mask material layer 150 of the sidewall surfaces of sacrificing photoresist layer 145, therefore, by controlling the thickness of described the first mask material layer 150, just can control the width of the etching figure of final formation.The technique of described the first mask material layer that the embodiment of the present invention forms is atom layer deposition process, low-pressure chemical vapor deposition process or sub-aumospheric pressure cvd technique, because the deposition rate of above-mentioned several depositing operations is slower, the the first mask material layer uniformity forming is better, the sidewall of the first mask material layer 150 of sidewall surfaces that is positioned at described sacrifice photoresist layer 145 is smooth vertical, pattern is better, make the sidewall pattern of the first mask pattern of follow-up formation better, take described the first mask pattern when mask carries out etching to the second mask material layer or material layer to be etched, the pattern of the figure that etching forms is better.
Please refer to Figure 14, to described the first mask material layer 150(with reference to Figure 13) return etching, until expose described bottom anti-reflection layer 130 surfaces, the first mask material layer 150 that is positioned at the sidewall surfaces of described sacrifice photoresist layer 145 forms the first mask pattern 155.
The width of described the first mask pattern 155 is corresponding with the thickness of the first mask material layer 150.When described sacrifice photoresist layer 145 overlook visual angle be shaped as strip time, being shaped as around the annular mask pattern of sacrificing photoresist layer 145 of described the first mask pattern 155, in the present embodiment, because the final etching figure forming is metal interconnecting wires, after the described sacrifice bottom anti-reflection layer of follow-up removal and sacrifice photoresist layer, recycling photoresist covers the first mask pattern corresponding to strip zone line, expose the first mask pattern corresponding to strip two ends, the described photoresist of take is removed the first mask pattern corresponding to described strip two ends as mask, make described the first mask pattern become straight line or the broken line of bar shaped.
Please refer to Figure 15, utilize cineration technics to remove described sacrifice photoresist layer 145(with reference to Figure 13).
The organic substance consisting of elements such as C, O, H, N due to the material of described sacrifice photoresist layer forms, and the reacting gas of described cineration technics is O
2by described oxygen gas plasma, and utilize the sacrifice photoresist layer 145 of described oxygen gas plasma and carbonization or not carbonization to react, form the main product such as volatile carbon monoxide, carbon dioxide, water, thereby remove described sacrifice photoresist layer 145.In other embodiments, the reacting gas of described cineration technics can also comprise N
2or H
2deng, described N
2or H
2be conducive to improve the ability of sacrificing photoresist layer and residual polymer of removing.
In other embodiments, also can adopt wet-etching technology or dry etch process to remove described sacrifice photoresist layer.
Because the material of the bottom anti-reflection layer in the embodiment of the present invention is inorganic bottom anti-reflection layer, can not be ashed technique and remove, make described cineration technics only remove described sacrifice photoresist layer 145.
In other embodiments, when described the first mask pattern is formed at described sacrifice bottom anti-reflection layer and sacrifices photoresist layer sidewall, utilize cineration technics, wet-etching technology or dry etch process to remove described sacrifice bottom anti-reflection layer and sacrifice photoresist layer.
Please refer to Figure 16, described the first mask pattern 155 of take is mask, to described bottom anti-reflection layer 130(with reference to Figure 15), the second mask material layer 120(be with reference to Figure 15) carry out dry etching, form the second mask pattern 125.Owing to going back to the upper end of the first mask pattern 155 of etching formation, it not often regular rectangle, there is certain radian, directly utilize described the first mask pattern material layer to be etched to be carried out to the sidewall pattern that etching can affect the etching figure of final formation for mask, therefore, in the present embodiment, form after the second mask pattern 125, removal is positioned at the first mask pattern 155 and the remaining bottom anti-reflection layer on its surface, take described upper end be shaped as rule rectangular the second mask pattern 125 be mask, material layer 110 to be etched described in etching, be conducive to control the pattern of the etching figure of final formation.
Please refer to Figure 17, remove described the first mask pattern 155(with reference to Figure 16) and remaining bottom anti-reflection layer, described the second mask pattern 125 of take is mask, and described material layer 110 to be etched is carried out to etching, forms the etching figure 115 of autoregistration double-pattern.In the present embodiment, the technique of removing described the first mask pattern 155 and remaining bottom anti-reflection layer is wet etching.Because the width of described etching figure 115 determines according to the thickness of the first mask material layer, the thickness of described the first mask material layer can be less than the photoetching of existing technique, the minimum dimension of etching technics, the width of described etching figure 115 is less than utilize the width of the figure that photoetching process forms, is conducive to improve the integrated level of integrated circuit.
To sum up, the embodiment of the present invention forms on described material layer to be etched sacrifices photoresist layer, described sacrifice photoresist layer is carried out to Implantation to be solidified, then the sidewall surfaces at described sacrifice photoresist layer forms the first mask pattern, remove after described sacrifice photoresist layer, utilize described the first mask pattern to carry out etching to material layer to be etched.Due to after described sacrifice photoresist layer is cured, the hardness of sacrificing photoresist layer improves, the stress that forms the first mask material layer generation in the first mask pattern process can not make to sacrifice photoresist layer generation deformation, make the sidewall of sacrificing photoresist layer still perpendicular to material surface to be etched, make the sidewall of follow-up the first mask pattern that is formed at described sacrifice photoresist layer sidewall surfaces perpendicular to material surface to be etched, finally material layer to be etched is carried out to the sidewall pattern of etching figure of etching formation better.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement to make possible change and modification to technical solution of the present invention; therefore; every content that does not depart from technical solution of the present invention; any simple modification, equivalent variations and the modification above embodiment done according to technical spirit of the present invention, all belong to the protection range of technical solution of the present invention.
Claims (17)
1. a formation method for autoregistration double-pattern, is characterized in that, comprising:
Material layer to be etched is provided;
On described material layer to be etched, form and sacrifice photoresist layer;
Described sacrifice photoresist layer is cured;
Sidewall surfaces at described sacrifice photoresist layer forms the first mask pattern;
Remove described sacrifice photoresist layer.
2. the formation method of autoregistration double-pattern as claimed in claim 1, it is characterized in that, described curing process is Implantation curing process, utilizes described Implantation curing process that the photoresist of top and sidewall in sacrifice photoresist layer is become and solidifies photoresist shell.
3. the formation method of autoregistration double-pattern as claimed in claim 2, is characterized in that, the ion injecting in described Implantation curing process is H, B, BF
2, BF
3, BF
4, P, As, In, C, wherein one or more of Ge combination.
4. the formation method of autoregistration double-pattern as claimed in claim 3, is characterized in that, the dosage range injecting in described Implantation curing process is 10E13atom/cm
2~ 10E16atom/cm
2, the energy range of injection is 1KeV ~ 500KeV, the angular range of injection is-70 degree ~ 70 degree.
5. the formation method of autoregistration double-pattern as claimed in claim 1, it is characterized in that, the technique that forms described sacrifice photoresist layer comprises: in described material surface to be etched, form photoresist layer, described photoresist layer is carried out to exposure imaging, form and sacrifice photoresist layer.
6. the formation method of autoregistration double-pattern as claimed in claim 5, it is characterized in that, the technique that forms described the first mask pattern comprises: on described material layer to be etched, sacrifice photoresist layer surface, form the first mask material layer, described the first mask material layer is returned to etching, at described sacrifice photoresist layer sidewall, form the first mask pattern.
7. the formation method of autoregistration double-pattern as claimed in claim 1, it is characterized in that, the technique that forms described sacrifice photoresist layer comprises: in described material surface to be etched, form bottom anti-reflection layer, on described bottom anti-reflection layer surface, form photoresist layer, described photoresist layer is carried out to exposure imaging, form and sacrifice photoresist layer.
8. the formation method of autoregistration double-pattern as claimed in claim 7, it is characterized in that, the technique that forms described the first mask pattern comprises: on described bottom anti-reflection layer, sacrifice photoresist layer surface, form the first mask material layer, described the first mask material layer is returned to etching, at described sacrifice photoresist layer sidewall, form the first mask pattern.
9. the formation method of autoregistration double-pattern as claimed in claim 1, it is characterized in that, the technique that forms described sacrifice photoresist layer comprises: on described material layer to be etched, form bottom anti-reflection layer, on described bottom anti-reflection layer surface, form photoresist layer, described photoresist layer is carried out to exposure imaging, form and sacrifice photoresist layer, the described sacrifice photoresist layer of take is mask, described bottom anti-reflection layer is carried out to etching, form and sacrifice bottom anti-reflection layer.
10. the formation method of autoregistration double-pattern as claimed in claim 1, it is characterized in that, the technique that forms described sacrifice photoresist layer comprises: on described material layer to be etched, form the bottom anti-reflection layer that dissolves in developer solution, on described bottom anti-reflection layer surface, form photoresist layer, described bottom anti-reflection layer and photoresist layer are carried out to exposure imaging, form the sacrifice photoresist layer of sacrificing bottom anti-reflection layer and being positioned at described sacrifice bottom anti-reflection layer surface.
The formation method of 11. autoregistration double-patterns as described in claim 9 or 10, it is characterized in that, the technique that forms described the first mask pattern comprises: the sidewall surfaces at described material surface to be etched, sacrifice bottom anti-reflection layer and sacrifice photoresist layer forms the first mask material layer, sacrifice the top surface of photoresist layer, described the first mask material layer is returned to etching, in described sacrifice bottom anti-reflection layer and the sidewall surfaces of sacrificing photoresist layer, form the first mask pattern.
The formation method of 12. autoregistration double-patterns as claimed in claim 1, is characterized in that, the material of described the first mask pattern is silica, silicon nitride, silicon oxynitride, titanium nitride, wherein one or more of tantalum nitride.
The formation method of 13. autoregistration double-patterns as claimed in claim 1, is characterized in that, also comprises, in described material surface to be etched, forms the second mask material layer, forms and sacrifice photoresist layer on described the second mask material layer.
The formation method of 14. autoregistration double-patterns as claimed in claim 13, is characterized in that, forms after described the first mask pattern, and described the first mask pattern of take is mask, and described the second mask material layer is carried out to etching, forms the second mask pattern.
The formation method of 15. autoregistration double-patterns as claimed in claim 14, is characterized in that, removes described the first mask pattern, and described the second mask pattern of take is mask, and described material layer to be etched is carried out to etching.
The formation method of 16. autoregistration double-patterns as claimed in claim 13, it is characterized in that, the material of described the second mask material layer is silica, silicon nitride, carborundum, silicon oxynitride, amorphous carbon, polysilicon, hafnium oxide, titanium oxide, zirconia, titanium nitride, tantalum nitride, wherein one or more of titanium.
The formation method of 17. autoregistration double-patterns as claimed in claim 1, is characterized in that, also comprises, described the first mask pattern of take is mask, and described material layer to be etched is carried out to etching.
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