CN103400754B - Double exposure makes the method for high evenness grid lines - Google Patents
Double exposure makes the method for high evenness grid lines Download PDFInfo
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- CN103400754B CN103400754B CN201310354606.0A CN201310354606A CN103400754B CN 103400754 B CN103400754 B CN 103400754B CN 201310354606 A CN201310354606 A CN 201310354606A CN 103400754 B CN103400754 B CN 103400754B
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Abstract
Double exposure makes a method for high evenness grid lines, comprising: the silicon oxide film of deposited polycrystalline silicon thin film, amorphous c film and carbon containing, is coated with the first photoresist; Exposure and be developed in the first photoresist film in form first grid linear; Coating aminated compounds or polyamine compounds are with first grid linear in crosslinking curing first photoresist, and heating makes curing materials and the first photoresist surface reaction form the barrier film being insoluble to the second photoresist, removes remaining curing materials; Be coated with the second photoresist; First Line end cutting pattern is formed in the second photoresist film; Etching barrier film and first grid lines, form the second line end cutting pattern, remove the second photoresist subsequently; With remaining barrier film and first grid lines for mask, etch the silicon oxide film of carbon containing, amorphous c film and polysilicon membrane successively, and remove silicon oxide film and the amorphous c film of remaining carbon containing, form second grid lines structure at layer polysilicon film.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of method that double exposure makes high evenness grid lines.
Background technology
Along with the integrated level of semi-conductor chip improves constantly, the characteristic dimension of transistor constantly reduces, increasing to the challenge of photoetching process.Traditional photoetching process adopts the organic antireflection film (bottomanti-reflectivecoating, BARC) based on macromolecular material to improve the ability of photoetching process usually.Figure 1A is the structural diagrams of silicon substrate 1, organic antireflection film 2 and photoresist 3.Organic antireflection film can also expand the scope adjusted of etching technics, improves the uniformity coefficient of the rear graphic structure of etching.
After entering 45 nm technology node, be more and more difficult to based on the organic antireflection film of conventional polymer material the requirement meeting photoetching process and the rear graphic structure uniformity coefficient of etching.The amorphous c film utilizing plasma reinforced chemical vapour deposition (plasmaenhancedchemicalvapordeposition, PECVD) method to make is one of new material of alternative traditional organic antireflection film.The silicon oxide film 22 of usual employing amorphous c film 21 and carbon containing is arranged in pairs or groups and is substituted traditional organic antireflection film 2 (Figure 1B).The collocation of amorphous c film 21 and carbon containing silicon oxide film 22 has the advantage of antiradar reflectivity and the rear line edge roughness (line-edgeroughness, LER) of improvement etching, meets the requirement of photoetching process and the rear graphic structure uniformity coefficient of etching well.
Grid live width is one of major parameter of semiconductor devices.Reduce live width can improve integrated level and reduce device size.The photoetching process making little live width grid can produce line end and shrink (line-endshortening).The line end that Fig. 2 A illustrates grid bargraphs shrinks A.Grid live width is less, and more A is serious in line end contraction.Traditional method carries out optical approach effect correction (opticalproximitycorrection, OPC) to correct line end on the photomask to shrink (Fig. 2 B).When line end shrinks too serious, the correction of required optical approach effect correction is too large, to such an extent as to adjacent two line end figures form overlap on the photomask, cause optical proximity correction method to lose efficacy.In this case, just to have to increase by step line end cutting technique (line-endcut).Gate line end cutting technique is after the grid lines forming overlapping line end, and the line end cutting photoetching increased by utilizing cutting mask B and line end cutting etching technics cut off overlapping adjacent two line ends (Fig. 2 C).
After device size micro enters into 32 nm technology node, single photolithographic exposure cannot meet the resolution made needed for intensive linear array figure.Double-pattern (doublepatterning) forming technique is widely used in the intensive linear array figure of the following technology node of making 32 nanometer as solving the main method of this technical barrier by large quantity research.Fig. 3 A – Fig. 3 E illustrates the process that double-pattern forming technique makes intensive linear array figure.Needing to make on the silicon substrate 1 of intensive linear array figure, deposition substrate film 9 and hard mask 10, then the first photoresist 3 (Fig. 3 A) is coated with, after exposure, development, etching, in hard mask 10, form the first litho pattern 11 (Fig. 3 B), the characteristic dimension ratio of its lines and groove is 1:3.This silicon chip is coated with the second photoresist (5) Fig. 3 C, in the second photoresist 5 film, the second litho pattern 12 (Fig. 3 D) is formed after exposure and development, the characteristic dimension ratio of its lines and groove is also 1:3, but its position and the first litho pattern 11 interlock.Continue to be etched on silicon substrate and form second litho pattern 12 (Fig. 3 E) staggered with the first litho pattern 11.The combination of the first litho pattern 11 and the second litho pattern 12 constitutes the intensive linear array figure that target lines and trench features dimension scale are 1:1.
Double-pattern forming technique needs Twi-lithography and etching, i.e. photoetching-etching-photoetching-etching.Its cost is far longer than traditional single exposure forming technique.Reduce one of cost direction becoming new technology development of double-pattern forming technique.After the first litho pattern 11 develops, in same developing machine platform, the first photoresist 3 is coated with the method that curing materials solidifies the first litho pattern 11 in the first photoresist 3.The double-pattern shaping process after the method is adopted to be photoetching (development solidification)-photoetching-etching.Eliminate the first etch step in former technique, thus significantly reduce the cost of double-pattern forming technique.This method is also referred to as double-exposure technique (doubleexposure).
The manufacturing process of minimum live width grid comprises grid lines photoetching-grid lines etching-gate line end-grain cutting and cuts photoetching-gate line end-grain cutting and cut the steps such as etching.Grid lines etching and gate line end-grain cutting are cut etching and be merged into a step etching, substitute grid lines etching and gate line end-grain cutting in former technique and cut two step independent process of etching, and comprehensive agraphitic carbon technology, effectively can simplify the manufacture craft of minimum live width grid, the requirement of the rear graphic structure uniformity coefficient of etching can be met simultaneously.
But the process more complicated of such scheme, production capacity low cost is high, and homogeneity is limited.
Summary of the invention
Technical matters to be solved by this invention is for there is above-mentioned defect in prior art, a kind of manufacture craft that can simplify minimum live width gate line bar is provided, improve production capacity and reduce cost of manufacture, improving photolithographic process capability and the method for requirement of graphic structure uniformity coefficient after etching can be met.
According to the present invention, provide a kind of method that double exposure makes high evenness grid lines, it comprises:
First step: the silicon oxide film of deposited polycrystalline silicon thin film, amorphous c film and carbon containing successively on silicon substrate, then coating can be shaped dura mater first photoresist;
Second step: complete in the film exposing and be developed in the first photoresist and form first grid linear;
Third step: in the same developing machine platform identical with development step, first photoresist is coated with aminated compounds or polyamine compounds with first grid linear in crosslinking curing first photoresist, heating makes curing materials and the first photoresist surface reaction form the barrier film being insoluble to the second photoresist, removes remaining curing materials;
4th step: the first photoresist is after hardening coated with the second photoresist;
5th step: complete exposure and be developed in the second photoresist film forming First Line end cutting pattern;
6th step: with the second photoresist film for mask, etching barrier film and first grid lines, form the second line end cutting pattern, remove the second photoresist subsequently;
7th step: with remaining barrier film and first grid lines for mask, continue to etch the silicon oxide film of carbon containing, amorphous c film and polysilicon membrane successively, and remove silicon oxide film and the amorphous c film of remaining carbon containing, finally form second grid lines structure at layer polysilicon film.
Preferably, the first described photoresist is selected from the photoresist of the photoresist of silane-group containing, the photoresist of silicon alkoxy and cage type siloxane.
Preferably, the first photoresist and the anti-etching of the second photoresist force rate can be more than or equal to 1.5:1.
Preferably, the principal ingredient of the curing materials of the first photoresist solidification is aminated compounds or polyamine compounds, and other composition comprises crosslinking catalyst and surfactant.
Preferably, the concentration range of the principal ingredient of the curing materials of the first photoresist solidification is 0.1wt% to 100wt%, preferably, and 0.5% to 10wt%.
Preferably, the scope of the first photoresist solidification heating-up temperature is 30 DEG C to 180 DEG C.
Preferably, the scope of the first photoresist solidification heating-up temperature is 50 DEG C to 120 DEG C.
Preferably, crosslinking catalyst is the non-nucleophilic type tertiary amine being dissolved in organic solvent; The concentration range of crosslinking catalyst is 0.1wt% to 20wt%, preferably, and 0.5% to 5wt%.
Preferably, surfactant is the non-ionics being dissolved in organic solvent; The concentration range of surfactant is 50ppm to 10000ppm, preferably, and 100ppm to 1000ppm.
Preferably, the thickness of amorphous c film is 20 nanometer to 300 nanometers.
Preferably, the thickness of amorphous c film is 50 nanometer to 250 nanometers.
Preferably, the thickness of the silicon oxide film of carbon containing is 0 nanometer to 40 nanometer, is preferably 5 nanometer to 30 nanometers.
Thus, the invention provides and a kind of manufacture craft that can simplify minimum live width gate line bar is provided, improve production capacity and reduce cost of manufacture, improve photolithographic process capability and the method for requirement of graphic structure uniformity coefficient after etching can be met.
Accompanying drawing explanation
By reference to the accompanying drawings, and by reference to detailed description below, will more easily there is more complete understanding to the present invention and more easily understand its adjoint advantage and feature, wherein:
Figure 1A schematically shows the section of structure of silicon substrate, organic antireflection film and photoresist.
Figure 1B schematically shows the section of structure of silicon substrate, amorphous c film, carbon containing silicon oxide film and photoresist.
The line end that Fig. 2 A illustrates grid bargraphs shrinks.
Fig. 2 B illustrates the vertical view utilizing optical approach effect correction to correct the contraction of grid line end on the photomask.
Fig. 2 C illustrates the vertical view utilizing gate line end cutting technique to make minimum live width grid.
Fig. 3 A – Fig. 3 E illustrates the process that double-pattern forming technique makes intensive linear array figure.
Fig. 4 A has been the silicon oxide film of deposited polycrystalline silicon thin film, amorphous c film and carbon containing and the section of structure of coating the first photoresist.
Fig. 4 B is the sectional view forming first grid linear in the film of the first photoresist.
Fig. 4 C forms the sectional view being insoluble to the barrier film of the second photoresist after solidification first photoresist.
Fig. 4 D has been the sectional view of coating second photoresist.
Fig. 4 E is the sectional view forming First Line end cutting pattern in the film of the second photoresist.
Fig. 4 F is the vertical view of formation second line end cutting pattern.
Fig. 4 G is the vertical view forming second grid lines structure at layer polysilicon film.
It should be noted that, accompanying drawing is for illustration of the present invention, and unrestricted the present invention.Note, represent that the accompanying drawing of structure may not be draw in proportion.Further, in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention clearly with understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
Fig. 4 A to Fig. 4 G schematically shows double exposure according to the preferred embodiment of the invention and makes the method for high evenness grid lines.
Specifically, as shown in Fig. 4 A to Fig. 4 G, the method for double exposure making high evenness grid lines comprises according to the preferred embodiment of the invention:
First step: the silicon oxide film 22 of deposited polycrystalline silicon thin film 4, amorphous c film 21 and carbon containing successively on silicon substrate 1, then coating can be shaped dura mater first photoresist 3, as shown in Figure 4 A.
Preferably, the thickness of amorphous c film 21 is 20 nanometer to 300 nanometers, further preferably, and 50 nanometer to 250 nanometers.
Preferably, the thickness of the silicon oxide film 22 of carbon containing is 0 nanometer to 40 nanometer, further preferably, and 5 nanometer to 30 nanometers.
Second step: complete in the film exposing and be developed in the first photoresist 3 and form first grid lines 31 structure, as shown in Figure 4 B.
Third step: in the same developing machine platform identical with development step, first photoresist 3 is coated with aminated compounds (Amine) or polyamine compounds (Polyamine) with first grid lines 31 structure in crosslinking curing first photoresist 3, heating makes curing materials and the first photoresist 3 surface reaction form the barrier film 13 being insoluble to the second photoresist 5, remove remaining curing materials, as shown in Figure 4 C.Such as, remaining aminated compounds or polyamine compounds first with after acid solution process, then can be removed with deionized water.
Wherein, preferably, the principal ingredient of the curing materials that the first photoresist 3 solidifies is aminated compounds or polyamine compounds (isocyanate), and other compositions can include but not limited to crosslinking catalyst and surfactant.
Preferably, the concentration range of the principal ingredient (that is, aminated compounds or polyamine compounds) of the curing materials of the first photoresist solidification is 0.1wt% to 100wt%, preferably, and 0.5% to 10wt%.
Preferably, the Material selec-tion of crosslinking catalyst is based on activity of cross-linking reaction requirement.Preferably, crosslinking catalyst is the non-nucleophilic type tertiary amine (Tertiaryamine) being dissolved in organic solvent.The concentration range of crosslinking catalyst is 0.1wt% to 20wt%, preferably, and 0.5% to 5wt%.
The Material selec-tion of surfactant is dissolubility based on cross-linked material solution and reactivity requirement.Preferably, surfactant is the non-ionics being dissolved in organic solvent.The concentration range of surfactant is 50ppm to 10000ppm, preferably, and 100ppm to 1000ppm.
And preferably, the scope that the first photoresist 3 solidifies heating-up temperature is 30 DEG C to 180 DEG C, further preferably, 50 DEG C to 120 DEG C.Preferably, the first photoresist 3 solidifies the heat time, and its scope is 15 seconds to 600 seconds, further preferably, and 30 seconds to 120 seconds.
4th step: the first photoresist 3 is after hardening coated with the second photoresist 5, as shown in Figure 4 D.
5th step: complete in the film exposing and be developed in the second photoresist 5 and form First Line end cutting pattern 51, as shown in Figure 4 E.
6th step: with the second photoresist 5 film for mask, etching barrier film 13 and first grid lines 31, form the second line end cutting pattern 52, remove the second photoresist 5 subsequently; As illustrated in figure 4f.
7th step: with remaining barrier film 13 and first grid lines 31 for mask, continue to etch the silicon oxide film 22 of carbon containing, amorphous c film 21 and polysilicon membrane 4 successively, and remove silicon oxide film 22 and the amorphous c film 21 of remaining carbon containing, final in polysilicon membrane 4 layers of formation second grid lines 41 structure, as shown in Figure 4 G.
The first described photoresist 3 can select the photoresist that can form dura mater, preferably, the photoresist of silane-group containing (silyl), the photoresist of silicon alkoxy (siloxyl) and the photoresist of cage type siloxane (silsesquioxane) is selected from.
Preferably, the first photoresist 3 and the anti-etching of the second photoresist 5 force rate can be more than or equal to 1.5:1.
Thus, the invention provides and a kind of manufacture craft that can simplify minimum live width gate line bar is provided, improve production capacity and reduce cost of manufacture, improve photolithographic process capability and the method for requirement of graphic structure uniformity coefficient after etching can be met.
Be understandable that, although the present invention with preferred embodiment disclose as above, but above-described embodiment and be not used to limit the present invention.For any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the technology contents of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (10)
1. double exposure makes a method for high evenness grid lines, it is characterized in that comprising:
First step: the silicon oxide film of deposited polycrystalline silicon thin film, amorphous c film and carbon containing successively on silicon substrate, then coating can be shaped dura mater first photoresist;
Second step: complete in the film exposing and be developed in the first photoresist and form first grid linear;
Third step: in the same developing machine platform identical with development step, first photoresist is coated with aminated compounds or polyamine compounds with first grid linear in crosslinking curing first photoresist, heating makes curing materials and the first photoresist surface reaction form the barrier film being insoluble to the second photoresist, removes remaining curing materials;
4th step: the first photoresist is after hardening coated with the second photoresist;
5th step: complete exposure and be developed in the second photoresist film forming First Line end cutting pattern;
6th step: with the second photoresist film for mask, etching barrier film and first grid lines, form the second line end cutting pattern, remove the second photoresist subsequently;
7th step: with remaining barrier film and first grid lines for mask, continue to etch the silicon oxide film of carbon containing, amorphous c film and polysilicon membrane successively, and remove silicon oxide film and the amorphous c film of remaining carbon containing, finally form second grid lines structure at layer polysilicon film.
2. double exposure according to claim 1 makes the method for high evenness grid lines, and it is characterized in that, the first described photoresist is selected from the photoresist of silane-group containing, the photoresist of silicon alkoxy and the photoresist of cage type siloxane.
3. double exposure according to claim 1 and 2 makes the method for high evenness grid lines, it is characterized in that, the first photoresist and the anti-etching of the second photoresist force rate can be more than or equal to 1.5:1.
4. double exposure according to claim 1 and 2 makes the method for high evenness grid lines, it is characterized in that, the principal ingredient of the curing materials of the first photoresist solidification is aminated compounds or polyamine compounds, and other composition comprises crosslinking catalyst and surfactant.
5. double exposure according to claim 1 and 2 makes the method for high evenness grid lines, it is characterized in that, the concentration range of the principal ingredient of the curing materials of the first photoresist solidification is 0.1wt% to 100wt%.
6. double exposure according to claim 1 and 2 makes the method for high evenness grid lines, it is characterized in that, the scope of the first photoresist solidification heating-up temperature is 30 DEG C to 180 DEG C.
7. double exposure according to claim 1 and 2 makes the method for high evenness grid lines, and it is characterized in that, crosslinking catalyst is the non-nucleophilic type tertiary amine being dissolved in organic solvent; The concentration range of crosslinking catalyst is 0.1wt% to 20wt%.
8. double exposure according to claim 1 and 2 makes the method for high evenness grid lines, and it is characterized in that, surfactant is the non-ionics being dissolved in organic solvent; The concentration range of surfactant is 50ppm to 10000ppm.
9. double exposure according to claim 1 and 2 makes the method for high evenness grid lines, and it is characterized in that, the thickness of amorphous c film is 20 nanometer to 300 nanometers.
10. double exposure according to claim 1 and 2 makes the method for high evenness grid lines, and it is characterized in that, the thickness of the silicon oxide film of carbon containing is 5 nanometer to 40 nanometers.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101030539A (en) * | 2006-02-27 | 2007-09-05 | 台湾积体电路制造股份有限公司 | Method of making semiconductor device |
| CN102651312A (en) * | 2011-02-24 | 2012-08-29 | 中芯国际集成电路制造(上海)有限公司 | Method for forming gate electrode |
| CN102841499A (en) * | 2012-09-19 | 2012-12-26 | 上海华力微电子有限公司 | Phase-shift photomask fabrication method |
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| JP5446648B2 (en) * | 2008-10-07 | 2014-03-19 | 信越化学工業株式会社 | Pattern formation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101030539A (en) * | 2006-02-27 | 2007-09-05 | 台湾积体电路制造股份有限公司 | Method of making semiconductor device |
| CN102651312A (en) * | 2011-02-24 | 2012-08-29 | 中芯国际集成电路制造(上海)有限公司 | Method for forming gate electrode |
| CN102841499A (en) * | 2012-09-19 | 2012-12-26 | 上海华力微电子有限公司 | Phase-shift photomask fabrication method |
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