CN103471653A - High temperature wireless passive three-parameter-integrated sensor based on co-firing ceramic technology - Google Patents
High temperature wireless passive three-parameter-integrated sensor based on co-firing ceramic technology Download PDFInfo
- Publication number
- CN103471653A CN103471653A CN2013104016536A CN201310401653A CN103471653A CN 103471653 A CN103471653 A CN 103471653A CN 2013104016536 A CN2013104016536 A CN 2013104016536A CN 201310401653 A CN201310401653 A CN 201310401653A CN 103471653 A CN103471653 A CN 103471653A
- Authority
- CN
- China
- Prior art keywords
- ceramic chips
- loop
- electric capacity
- presser sensor
- responsive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention relates to a co-firing ceramic high temperature sensor, in particular to a high temperature wireless passive three-parameter-integrated sensor based on the co-firing ceramic technology. The sensor solves the problem that an existing co-firing ceramic high temperature sensor can only conduct single-parameter measurement. The co-firing ceramic high temperature sensor based on the co-firing ceramic technology comprises a first raw ceramic piece, a second raw ceramic piece, a third raw ceramic piece, a fourth raw ceramic piece, a fifth raw ceramic piece, a sixth raw ceramic piece, a seventh raw ceramic piece, an eighth raw ceramic piece, a ninth raw ceramic piece, a tenth raw ceramic piece and an eleventh raw ceramic piece, wherein the first raw ceramic piece, the second raw ceramic piece, the third raw ceramic piece, the fourth raw ceramic piece, the fifth raw ceramic piece, the sixth raw ceramic piece, the seventh raw ceramic piece, the eighth raw ceramic piece, the ninth raw ceramic piece, the tenth raw ceramic piece and the eleventh raw ceramic piece are sequentially overlapped into a whole from bottom to top. The high temperature wireless passive three-parameter-integrated sensor is suitable for measurement of multiple parameters in the same position in the automation field, the aerospace field, the aviation field and the national defense and war industry field.
Description
Technical field
The present invention relates to wireless and passive refractory ceramics sensor, specifically a kind of high temperature wireless and passive three parameter integrated sensors based on the common burning porcelain technology.
Background technology
The LTCC(LTCC) and the HTCC(High Temperature Co Fired Ceramic) pyrostat has high temperature resistant, low-cost, insulation, the series of characteristics such as encapsulation certainly because of it, and is widely used in the isoparametric measurement of pressure, temperature, acceleration in robotization, space flight, aviation and defence and military field.Under the prior art condition, LTCC and HTCC pyrostat are limit by self structure, can only carry out the one-parameter measurement.Therefore, existing LTCC and HTCC pyrostat can't meet specific testing requirement in a lot of application scenarios.For example, when aeromotor is carried out to parameter measurement, need to measure pressure, temperature and the acceleration of its tail spray position simultaneously.If adopting existing common burning porcelain pyrostat is measured, need on aeromotor, make a call to three mounting holes three common burning porcelain pyrostats are installed respectively, and by three common burning porcelain pyrostats difference gaging pressure, temperature and acceleration.Yet so just can't guarantee that the data that three common burning porcelain pyrostats record are data of same position, thereby affect the accuracy of measurement data.In addition, a plurality of mounting holes also can bring adverse effect to the structural strength of measured object.Based on this, be necessary to invent a kind of brand-new common burning porcelain pyrostat, the problem that can only carry out the one-parameter measurement to solve existing common burning porcelain pyrostat.
Summary of the invention
The problem that the present invention can only carry out the one-parameter measurement in order to solve existing common burning porcelain pyrostat, provide a kind of high temperature wireless and passive three parameter integrated sensors based on the common burning porcelain technology.
The present invention adopts following technical scheme to realize: the high temperature wireless and passive three parameter integrated sensors based on the common burning porcelain technology comprise the first ceramic chips, the second ceramic chips, the 3rd ceramic chips, the 4th ceramic chips, the 5th ceramic chips, the 6th ceramic chips, the 7th ceramic chips, the 8th ceramic chips, the 9th ceramic chips, the tenth ceramic chips, the 11 ceramic chips; The first ceramic chips, the second ceramic chips, the 3rd ceramic chips, the 4th ceramic chips, the 5th ceramic chips, the 6th ceramic chips, the 7th ceramic chips, the 8th ceramic chips, the 9th ceramic chips, the tenth ceramic chips, the 11 ceramic chips stack gradually from bottom to top and are integral; The right part of the first ceramic chips offers the first gas port of up/down perforation; The rear portion of the first ceramic chips offers the first row pore of up/down perforation; The right part of the second ceramic chips offers the second gas port of up/down perforation; The second gas port and the corresponding perforation of the first gas port; The rear portion of the second ceramic chips offers the second row pore of up/down perforation; The perforation corresponding to the first row pore of second row pore; The left part of the second ceramic chips offers the semi-girder mass movable span of up/down perforation; The upper surface right part of the 3rd ceramic chips is furnished with presser sensor electric capacity bottom crown; Presser sensor electric capacity bottom crown and the second gas port position over against; The rear portion of the 3rd ceramic chips offers the 3rd vent port of up/down perforation; The perforation corresponding to the second row pore of the 3rd vent port; The left part perforation processing of the 3rd ceramic chips has the semi-girder mass; The semi-girder mass is corresponding with semi-girder mass movable span position; The upper surface of semi-girder mass is furnished with acceleration sensitive electric capacity bottom crown; The right part of the 4th ceramic chips offers the presser sensor capacitor dielectric hole of up/down perforation; Presser sensor capacitor dielectric hole and presser sensor electric capacity bottom crown position over against; The rear hole wall in presser sensor capacitor dielectric hole offers the first exhaust passage; The rear end of the first exhaust passage and the corresponding perforation of the 3rd vent port; The left part of the 4th ceramic chips offers the acceleration sensitive capacitor dielectric hole of up/down perforation; Acceleration sensitive capacitor dielectric hole and acceleration sensitive electric capacity bottom crown position over against; The left hole wall in acceleration sensitive capacitor dielectric hole and the left surface of the 4th ceramic chips offer the second exhaust passage that left and right connects; The upper surface right part of the 5th ceramic chips is furnished with presser sensor electric capacity top crown; Presser sensor electric capacity top crown and presser sensor capacitor dielectric hole site over against; The upper surface left part of the 5th ceramic chips is furnished with acceleration sensitive electric capacity top crown; Acceleration sensitive electric capacity top crown and acceleration sensitive capacitor dielectric hole site over against; The upper face center of the 6th ceramic chips is furnished with responsive to temperature electric capacity bottom crown; The ceramic chips of the 7th ceramic chips for adopting the ferroelectric media material to make; The upper face center of the 8th ceramic chips is furnished with respectively the telefault of responsive to temperature electric capacity top crown and responsive to temperature LC loop; Responsive to temperature electric capacity top crown and responsive to temperature electric capacity bottom crown position over against; The inner of the telefault of responsive to temperature LC loop is connected with responsive to temperature electric capacity top crown; The left front section of the upper surface of the 9th ceramic chips is furnished with the telefault of acceleration sensitive LC loop; The right back section of the upper surface of the tenth ceramic chips is furnished with the telefault of presser sensor LC loop; The upper surface of the lower surface of the 3rd ceramic chips and the tenth ceramic chips offers the via hole of up/down perforation; Be equipped with in via hole by metal paste and fill the wire formed; The outer end of the telefault of responsive to temperature LC loop is connected with responsive to temperature electric capacity bottom crown by wire; The inner of the telefault of acceleration sensitive LC loop is connected with acceleration sensitive electric capacity top crown by wire; The outer end of the telefault of acceleration sensitive LC loop is connected with acceleration sensitive electric capacity bottom crown by wire; The inner of the telefault of presser sensor LC loop is connected with presser sensor electric capacity top crown by wire; The outer end of the telefault of presser sensor LC loop is connected with presser sensor electric capacity bottom crown by wire.
During work, adopt glass paste to block the first row pore, to guarantee the impermeability in presser sensor capacitor dielectric hole, and high temperature wireless and passive three parameter integrated sensors and the external coil antenna based on the common burning porcelain technology of the present invention is coupled.The specific works process comprises: one, when measuring temperature variation, the dielectric constant with temperature of the 7th ceramic chips changes and changes, and causes the capacitance of responsive to temperature electric capacity to change, and then causes the resonance frequency of responsive to temperature LC loop to change.Now by the external coil antenna, read resonance frequency, can record temperature value.Two, do the used time at acceleration, semi-girder occurs bending and deformation under effect of vibration, make mass, in semi-girder mass movable span and acceleration sensitive capacitor dielectric hole, up-down vibration occur, and then make the distance between acceleration sensitive electric capacity bottom crown and acceleration sensitive electric capacity top crown change, cause the capacitance of acceleration sensitive electric capacity to change, and then cause the resonance frequency of acceleration sensitive LC loop to change.Now by the external coil antenna, read resonance frequency, can record accekeration.Three, when pressure-acting is arranged, deformation occurs in the 3rd ceramic chips under pressure, make the distance between presser sensor electric capacity bottom crown and presser sensor electric capacity top crown change, cause the capacitance of presser sensor electric capacity to change, and then cause the resonance frequency of presser sensor LC loop to change.Now by the external coil antenna, read resonance frequency, can record force value.In said process, the effect of the first gas port and the second gas port is to guarantee that presser sensor electric capacity bottom crown contacts with external environment.The effect of first row pore, second row pore, the 3rd vent port, the first exhaust passage, the second exhaust passage is that the carbon film in the assurance lamination process is discharged after sintering oxidation.The effect of the 11 ceramic chips is to guarantee that the telefault of presser sensor LC loop is not exposed in rugged surroundings (both can effectively prevent the at high temperature oxidation of telefault of presser sensor LC loop, the telefault that can prevent again presser sensor LC loop is corroded under corrosive atmosphere), improve the overall construction intensity of sensor simultaneously.Based on said process, high temperature wireless and passive three parameter integrated sensors based on the common burning porcelain technology of the present invention become one three sensitization capacitances (presser sensor electric capacity, acceleration sensitive electric capacity, responsive to temperature electric capacity) and three responsive LC loops (presser sensor LC loop, acceleration sensitive LC loop, responsive to temperature LC loop) by the eleventh floor ceramic chips, have realized that pressure, acceleration, temperature three parameters to same position are measured.Therefore, with existing common burning porcelain pyrostat, compare, not only measurement accuracy is higher for high temperature wireless and passive three parameter integrated sensors based on the common burning porcelain technology of the present invention, and has saved a plurality of mounting holes, thereby has effectively guaranteed the structural strength of measured object.
The present invention is rational in infrastructure, it is ingenious to design, efficiently solve the problem that existing common burning porcelain pyrostat can only carry out the one-parameter measurement, be applicable to the same position measuring multiple parameters in robotization, space flight, aviation and defence and military field, be particularly useful for the same position measuring multiple parameters under various mal-conditions.
The accompanying drawing explanation
Fig. 1 is one-piece construction schematic diagram of the present invention.
Fig. 2 is Split type structure schematic diagram of the present invention.
Fig. 3 is the structural representation of the first ceramic chips of the present invention.
Fig. 4 is the structural representation of the second ceramic chips of the present invention.
Fig. 5 is the structural representation of the 3rd ceramic chips of the present invention.
Fig. 6 is the structural representation of the 4th ceramic chips of the present invention.
Fig. 7 is the structural representation of the 5th ceramic chips of the present invention.
Fig. 8 is the structural representation of the 6th ceramic chips of the present invention.
Fig. 9 is the structural representation of the 7th ceramic chips of the present invention.
Figure 10 is the structural representation of the 8th ceramic chips of the present invention.
Figure 11 is the structural representation of the 9th ceramic chips of the present invention.
Figure 12 is the structural representation of the tenth ceramic chips of the present invention.
Figure 13 is the structural representation of the 11 ceramic chips of the present invention.
Figure 14 is the structural representation of coupling lumped circuit model of the present invention.
Figure 15 is the simulation analysis result schematic diagram of coupling lumped circuit model of the present invention.
Figure 16 is coupling experiment test result schematic diagram of the present invention.
In figure: 1-the first ceramic chips, 2-the second ceramic chips, 3-the 3rd ceramic chips, 4-the 4th ceramic chips, 5-the 5th ceramic chips, 6-the 6th ceramic chips, 7-the 7th ceramic chips, 8-the 8th ceramic chips, 9-the 9th ceramic chips, 10-the tenth ceramic chips, 11-the 11 ceramic chips, 12-the first gas port, 13-first row pore, 14-the second gas port, 15-second row pore, 16-semi-girder mass movable span, 17-presser sensor electric capacity bottom crown, 18-the 3rd vent port, 19-semi-girder mass, 20-acceleration sensitive electric capacity bottom crown, 21-presser sensor capacitor dielectric hole, 22-the first exhaust passage, 23-acceleration sensitive capacitor dielectric hole, 24-the second exhaust passage, 25-presser sensor electric capacity top crown, 26-acceleration sensitive electric capacity top crown, 27-responsive to temperature electric capacity bottom crown, 28-responsive to temperature electric capacity top crown, the telefault of 29-responsive to temperature LC loop, the telefault of 30-acceleration sensitive LC loop, the telefault of 31-presser sensor LC loop, the 32-via hole, the 33-wire.
Embodiment
High temperature wireless and passive three parameter integrated sensors based on the common burning porcelain technology, comprise the first ceramic chips 1, the second ceramic chips 2, the 3rd ceramic chips 3, the 4th ceramic chips 4, the 5th ceramic chips 5, the 6th ceramic chips 6, the 7th ceramic chips 7, the 8th ceramic chips 8, the 9th ceramic chips 9, the tenth ceramic chips the 10, the 11 ceramic chips 11;
The first ceramic chips 1, the second ceramic chips 2, the 3rd ceramic chips 3, the 4th ceramic chips 4, the 5th ceramic chips 5, the 6th ceramic chips 6, the 7th ceramic chips 7, the 8th ceramic chips 8, the 9th ceramic chips 9, the tenth ceramic chips the 10, the 11 ceramic chips 11 stack gradually from bottom to top and are integral;
The right part of the first ceramic chips 1 offers the first gas port 12 of up/down perforation; The rear portion of the first ceramic chips 1 offers the first row pore 13 of up/down perforation;
The right part of the second ceramic chips 2 offers the second gas port 14 of up/down perforation; The second gas port 14 and the corresponding perforation of the first gas port 12; The rear portion of the second ceramic chips 2 offers the second row pore 15 of up/down perforation; Second row pore 15 perforation corresponding to first row pore 13; The left part of the second ceramic chips 2 offers the semi-girder mass movable span 16 of up/down perforation;
The upper surface right part of the 3rd ceramic chips 3 is furnished with presser sensor electric capacity bottom crown 17; Presser sensor electric capacity bottom crown 17 and the second gas port 14 positions over against; The rear portion of the 3rd ceramic chips 3 offers the 3rd vent port 18 of up/down perforation; The perforation corresponding to second row pore 15 of the 3rd vent port 18; The left part perforation processing of the 3rd ceramic chips 3 has semi-girder mass 19; Semi-girder mass 19 is corresponding with semi-girder mass movable span 16 positions; The upper surface of semi-girder mass 19 is furnished with acceleration sensitive electric capacity bottom crown 20;
The right part of the 4th ceramic chips 4 offers the presser sensor capacitor dielectric hole 21 of up/down perforation; Presser sensor capacitor dielectric hole 21 and presser sensor electric capacity bottom crown 17 positions over against; The rear hole wall in presser sensor capacitor dielectric hole 21 offers the first exhaust passage 22; The first 22 rear end, exhaust passage and the corresponding perforation of the 3rd vent port 18; The left part of the 4th ceramic chips 4 offers the acceleration sensitive capacitor dielectric hole 23 of up/down perforation; Acceleration sensitive capacitor dielectric hole 23 and acceleration sensitive electric capacity bottom crown 20 positions over against; The left hole wall in acceleration sensitive capacitor dielectric hole 23 and the left surface of the 4th ceramic chips 4 offer the second exhaust passage 24 that left and right connects;
The upper surface right part of the 5th ceramic chips 5 is furnished with presser sensor electric capacity top crown 25; Presser sensor electric capacity top crown 25 and 21 positions, presser sensor capacitor dielectric hole over against; The upper surface left part of the 5th ceramic chips 5 is furnished with acceleration sensitive electric capacity top crown 26; Acceleration sensitive electric capacity top crown 26 and 23 positions, acceleration sensitive capacitor dielectric hole over against;
The upper face center of the 6th ceramic chips 6 is furnished with responsive to temperature electric capacity bottom crown 27;
The ceramic chips of the 7th ceramic chips 7 for adopting the ferroelectric media material to make;
The upper face center of the 8th ceramic chips 8 is furnished with respectively the telefault 29 of responsive to temperature electric capacity top crown 28 and responsive to temperature LC loop; Responsive to temperature electric capacity top crown 28 and responsive to temperature electric capacity bottom crown 27 positions over against; The inner of the telefault 29 of responsive to temperature LC loop is connected with responsive to temperature electric capacity top crown 28;
The left front section of the upper surface of the 9th ceramic chips 9 is furnished with the telefault 30 of acceleration sensitive LC loop;
The right back section of the upper surface of the tenth ceramic chips 10 is furnished with the telefault 31 of presser sensor LC loop;
The upper surface of the lower surface of the 3rd ceramic chips 3 and the tenth ceramic chips 10 offers the via hole 32 of up/down perforation; Be equipped with in via hole 32 by metal paste and fill the wire 33 formed;
The outer end of the telefault 29 of responsive to temperature LC loop is connected with responsive to temperature electric capacity bottom crown 27 by wire 33;
The inner of the telefault 30 of acceleration sensitive LC loop is connected with acceleration sensitive electric capacity top crown 26 by wire 33; The outer end of the telefault 30 of acceleration sensitive LC loop is connected with acceleration sensitive electric capacity bottom crown 20 by wire 33;
The inner of the telefault 31 of presser sensor LC loop is connected with presser sensor electric capacity top crown 25 by wire 33; The outer end of the telefault 31 of presser sensor LC loop is connected with presser sensor electric capacity bottom crown 17 by wire 33.
Responsive to temperature LC loop, acceleration sensitive LC loop, presser sensor LC loop become one; Responsive to temperature LC loop, acceleration sensitive LC loop, presser sensor LC loop common with an external coil antenna-coupled.During work, can read the resonance frequency of above-mentioned three responsive LC loops by an external coil antenna.
During concrete enforcement, the telefault 29 of presser sensor electric capacity bottom crown 17, acceleration sensitive electric capacity bottom crown 20, presser sensor electric capacity top crown 25, responsive to temperature electric capacity bottom crown 27, responsive to temperature electric capacity top crown 28, responsive to temperature LC loop, the telefault 30 of acceleration sensitive LC loop, the telefault 31 of presser sensor LC loop, wire 33 are all arranged by the metal paste printing.When carrying out design of Structural Parameters, to reduce presser sensor LC loop, acceleration sensitive LC loop, the coupling each other of responsive to temperature LC loop as far as possible, and increase the coupling between external coil antenna and presser sensor LC loop, acceleration sensitive LC loop, responsive to temperature LC loop as far as possible.Simultaneously, guarantee that presser sensor LC loop, acceleration sensitive LC loop, responsive to temperature LC loop resonance frequency separately in variable resonant frequency range separates (for example the resonance frequency of the resonance frequency of the resonance frequency of presser sensor LC loop, acceleration sensitive LC loop, responsive to temperature LC loop is respectively 20MHz, 30MHz, 40MHz).In addition, guarantee the swept-frequency signal of resonance frequency of the responsive LC loop of incoming frequency scope overburden pressure, acceleration sensitive LC loop, the responsive to temperature LC loop of external coil antenna.By measuring the impedance phase angle of external coil antenna, can obtain three phase place trough points, the resonance frequency of the responsive LC loop of difference corresponding pressure, acceleration sensitive LC loop, responsive to temperature LC loop, force value, temperature value, the accekeration that by resonance frequency or nominal data, can measure.As shown in figure 14, set up high temperature wireless and passive three parameter integrated sensors based on the common burning porcelain technology of the present invention and the coupling lumped circuit model of external coil antenna.By analyzing this coupling lumped circuit model, draw following expression:
Above various in: L
1inductance for the external coil antenna; L
2inductance for presser sensor LC loop; L
3inductance for acceleration sensitive LC loop; L
4inductance for responsive to temperature LC loop; C
2variable capacitance for presser sensor LC loop; C
3variable capacitance for acceleration sensitive LC loop; C
4variable capacitance for responsive to temperature LC loop; R
1resistance in series for the external coil antenna; R
2resistance in series for presser sensor LC loop; R
3resistance in series for acceleration sensitive LC loop; R
4resistance in series for responsive to temperature LC loop; V
1input terminal voltage for the external coil antenna; V
2voltage for the inductance two ends of presser sensor LC loop; V
3voltage for the inductance two ends of acceleration sensitive LC loop; V
4voltage for the inductance two ends of responsive to temperature LC loop; I
1electric current for the external coil antenna; I
2induction current for presser sensor LC loop; I
3induction current for acceleration sensitive LC loop; I
4induction current for responsive to temperature LC loop; M
12for the mutual inductance between external coil antenna and presser sensor LC loop; M
13for the mutual inductance between external coil antenna and acceleration sensitive LC loop; M
14for the mutual inductance between external coil antenna and responsive to temperature LC loop; M
23for the mutual inductance between presser sensor LC loop and acceleration sensitive LC loop; M
24for the mutual inductance between presser sensor LC loop and responsive to temperature LC loop; M
34for the mutual inductance between acceleration sensitive LC loop and responsive to temperature LC loop.As shown in figure 15, by the impedance parameter of this coupling lumped circuit model peripheral coil antenna of MATLAB software analysis
, draw the impedance phase angle of external coil antenna
with the change curve of frequency f, can obtain three phase place trough points by this change curve, these three phase place trough points are the resonance frequency of the responsive LC loop of corresponding pressure, acceleration sensitive LC loop, responsive to temperature LC loop respectively.As shown in figure 16, by coupling experiment, test, show that experimental results is consistent with MATLAB software analysis result.Experimental results also shows: when the variable capacitance of the variable capacitance of the variable capacitance of presser sensor LC loop, acceleration sensitive LC loop, responsive to temperature LC loop changes, three phase place troughs are put corresponding resonance frequency and are also changed.
Claims (2)
1. the high temperature wireless and passive three parameter integrated sensors based on the common burning porcelain technology, is characterized in that: comprise the first ceramic chips (1), the second ceramic chips (2), the 3rd ceramic chips (3), the 4th ceramic chips (4), the 5th ceramic chips (5), the 6th ceramic chips (6), the 7th ceramic chips (7), the 8th ceramic chips (8), the 9th ceramic chips (9), the tenth ceramic chips (10), the 11 ceramic chips (11);
The first ceramic chips (1), the second ceramic chips (2), the 3rd ceramic chips (3), the 4th ceramic chips (4), the 5th ceramic chips (5), the 6th ceramic chips (6), the 7th ceramic chips (7), the 8th ceramic chips (8), the 9th ceramic chips (9), the tenth ceramic chips (10), the 11 ceramic chips (11) stack gradually from bottom to top and are integral;
The right part of the first ceramic chips (1) offers first gas port (12) of up/down perforation; The rear portion of the first ceramic chips (1) offers the first row pore (13) of up/down perforation;
The right part of the second ceramic chips (2) offers second gas port (14) of up/down perforation; The second gas port (14) and the corresponding perforation of the first gas port (12); The rear portion of the second ceramic chips (2) offers the second row pore (15) of up/down perforation; Second row pore (15) and the corresponding perforation of first row pore (13); The left part of the second ceramic chips (2) offers the semi-girder mass movable span (16) of up/down perforation;
The upper surface right part of the 3rd ceramic chips (3) is furnished with presser sensor electric capacity bottom crown (17); Presser sensor electric capacity bottom crown (17) and the second gas port (14) position over against; The rear portion of the 3rd ceramic chips (3) offers the 3rd vent port (18) of up/down perforation; The 3rd vent port (18) and the corresponding perforation of second row pore (15); The left part perforation processing of the 3rd ceramic chips (3) has semi-girder mass (19); Semi-girder mass (19) is corresponding with semi-girder mass movable span (16) position; The upper surface of semi-girder mass (19) is furnished with acceleration sensitive electric capacity bottom crown (20);
The right part of the 4th ceramic chips (4) offers the presser sensor capacitor dielectric hole (21) of up/down perforation; Presser sensor capacitor dielectric hole (21) and presser sensor electric capacity bottom crown (17) position over against; The rear hole wall in presser sensor capacitor dielectric hole (21) offers the first exhaust passage (22); The rear end of the first exhaust passage (22) and the corresponding perforation of the 3rd vent port (18); The left part of the 4th ceramic chips (4) offers the acceleration sensitive capacitor dielectric hole (23) of up/down perforation; Acceleration sensitive capacitor dielectric hole (23) and acceleration sensitive electric capacity bottom crown (20) position over against; The left surface of the left hole wall in acceleration sensitive capacitor dielectric hole (23) and the 4th ceramic chips (4) offers the second exhaust passage (24) that left and right connects;
The upper surface right part of the 5th ceramic chips (5) is furnished with presser sensor electric capacity top crown (25); Presser sensor electric capacity top crown (25) and position, presser sensor capacitor dielectric hole (21) over against; The upper surface left part of the 5th ceramic chips (5) is furnished with acceleration sensitive electric capacity top crown (26); Acceleration sensitive electric capacity top crown (26) and position, acceleration sensitive capacitor dielectric hole (23) over against;
The upper face center of the 6th ceramic chips (6) is furnished with responsive to temperature electric capacity bottom crown (27);
The ceramic chips of the 7th ceramic chips (7) for adopting the ferroelectric media material to make;
The upper face center of the 8th ceramic chips (8) is furnished with respectively the telefault (29) of responsive to temperature electric capacity top crown (28) and responsive to temperature LC loop; Responsive to temperature electric capacity top crown (28) and responsive to temperature electric capacity bottom crown (27) position over against; The inner of the telefault (29) of responsive to temperature LC loop is connected with responsive to temperature electric capacity top crown (28);
The left front section of upper surface of the 9th ceramic chips (9) is furnished with the telefault (30) of acceleration sensitive LC loop;
The right back section of upper surface of the tenth ceramic chips (10) is furnished with the telefault (31) of presser sensor LC loop;
The upper surface of the lower surface of the 3rd ceramic chips (3) and the tenth ceramic chips (10) offers the via hole (32) of up/down perforation; Be equipped with in via hole (32) by metal paste and fill the wire (33) formed;
The outer end of the telefault (29) of responsive to temperature LC loop is connected with responsive to temperature electric capacity bottom crown (27) by wire (33);
The inner of the telefault (30) of acceleration sensitive LC loop is connected with acceleration sensitive electric capacity top crown (26) by wire (33); The outer end of the telefault (30) of acceleration sensitive LC loop is connected with acceleration sensitive electric capacity bottom crown (20) by wire (33);
The inner of the telefault (31) of presser sensor LC loop is connected with presser sensor electric capacity top crown (25) by wire (33); The outer end of the telefault (31) of presser sensor LC loop is connected with presser sensor electric capacity bottom crown (17) by wire (33).
2. high temperature wireless and passive three parameter integrated sensors based on the common burning porcelain technology according to claim 1, it is characterized in that: responsive to temperature LC loop, acceleration sensitive LC loop, presser sensor LC loop become one; Responsive to temperature LC loop, acceleration sensitive LC loop, presser sensor LC loop common with an external coil antenna-coupled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310401653.6A CN103471653B (en) | 2013-09-06 | 2013-09-06 | Based on the high temperature wireless and passive three parameter integrated sensor of common burning porcelain technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310401653.6A CN103471653B (en) | 2013-09-06 | 2013-09-06 | Based on the high temperature wireless and passive three parameter integrated sensor of common burning porcelain technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103471653A true CN103471653A (en) | 2013-12-25 |
| CN103471653B CN103471653B (en) | 2015-08-19 |
Family
ID=49796599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310401653.6A Active CN103471653B (en) | 2013-09-06 | 2013-09-06 | Based on the high temperature wireless and passive three parameter integrated sensor of common burning porcelain technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103471653B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105021659A (en) * | 2015-07-08 | 2015-11-04 | 中国科学院上海硅酸盐研究所 | Passive wireless gas sensor based on low temperature co-fired ceramic substrate and manufacturing method thereof |
| CN105021326A (en) * | 2015-07-30 | 2015-11-04 | 湖北美标中芯电子科技有限公司 | One-piece ceramic capacitance pressure transducer and manufacture method |
| CN108507621A (en) * | 2018-05-18 | 2018-09-07 | 中国科学院上海硅酸盐研究所 | Passive and wireless pressure, temperature integrated sensor based on LTCC and preparation method thereof |
| CN109813931A (en) * | 2019-01-25 | 2019-05-28 | 中北大学 | High-range acceleration transducer ceramic silicon ceramic three-layer leadless packaging structure |
| CN110542455A (en) * | 2019-09-16 | 2019-12-06 | 中北大学 | HTCC composite microsensor for pressure/vibration synchronous measurement and preparation method thereof |
| WO2020057080A1 (en) * | 2018-09-18 | 2020-03-26 | 东南大学 | Multi-parameter lc sensor for monitoring state of rotating structure |
| CN111829559A (en) * | 2020-06-24 | 2020-10-27 | 东南大学 | Method for realizing multi-parameter measurement of PT symmetrical LC passive wireless sensing system |
| CN112378424A (en) * | 2020-11-13 | 2021-02-19 | 中北大学 | Wireless passive strain and temperature dual-parameter sensor and preparation method thereof |
| CN114705227A (en) * | 2022-04-27 | 2022-07-05 | 东南大学 | LC three-parameter rapid measurement circuit based on FFT |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19716521A1 (en) * | 1997-04-19 | 1998-10-22 | Bosch Gmbh Robert | Force sensor esp pressure sensor in LTCC technology |
| CN101322020A (en) * | 2005-10-03 | 2008-12-10 | 霍尼韦尔国际公司 | Wireless pressure sensor and method of forming same |
| CN101634662A (en) * | 2009-08-07 | 2010-01-27 | 北京大学 | Micro-accelerometer and preparation method thereof |
| US20120024075A1 (en) * | 2010-07-30 | 2012-02-02 | Canon Anelva Corporation | Capacitance pressure sensor |
| CN102782456A (en) * | 2009-12-21 | 2012-11-14 | 微-埃普西龙测量技术有限两合公司 | Sensor in which the sentor element is part of the sensor housing |
| CN103115704A (en) * | 2013-01-25 | 2013-05-22 | 中北大学 | High-temperature pressure sensor and production method thereof |
-
2013
- 2013-09-06 CN CN201310401653.6A patent/CN103471653B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19716521A1 (en) * | 1997-04-19 | 1998-10-22 | Bosch Gmbh Robert | Force sensor esp pressure sensor in LTCC technology |
| CN101322020A (en) * | 2005-10-03 | 2008-12-10 | 霍尼韦尔国际公司 | Wireless pressure sensor and method of forming same |
| CN101634662A (en) * | 2009-08-07 | 2010-01-27 | 北京大学 | Micro-accelerometer and preparation method thereof |
| CN102782456A (en) * | 2009-12-21 | 2012-11-14 | 微-埃普西龙测量技术有限两合公司 | Sensor in which the sentor element is part of the sensor housing |
| US20120024075A1 (en) * | 2010-07-30 | 2012-02-02 | Canon Anelva Corporation | Capacitance pressure sensor |
| CN103115704A (en) * | 2013-01-25 | 2013-05-22 | 中北大学 | High-temperature pressure sensor and production method thereof |
Non-Patent Citations (2)
| Title |
|---|
| 刘俊等: "基于LTCC工艺的数字三轴加速度传感器的研制", 《传感器与微系统》, vol. 27, no. 03, 20 March 2008 (2008-03-20), pages 80 - 82 * |
| 徐敬波等: "一种集成三轴加速度、压力、温度的硅微传感器", 《仪器仪表学报》, vol. 28, no. 08, 15 August 2007 (2007-08-15), pages 1394 - 1398 * |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105021659A (en) * | 2015-07-08 | 2015-11-04 | 中国科学院上海硅酸盐研究所 | Passive wireless gas sensor based on low temperature co-fired ceramic substrate and manufacturing method thereof |
| CN105021326A (en) * | 2015-07-30 | 2015-11-04 | 湖北美标中芯电子科技有限公司 | One-piece ceramic capacitance pressure transducer and manufacture method |
| CN105021326B (en) * | 2015-07-30 | 2018-06-05 | 襄阳臻芯传感科技有限公司 | A kind of integral ceramics capacitive pressure transducer and its manufacturing method |
| CN108507621A (en) * | 2018-05-18 | 2018-09-07 | 中国科学院上海硅酸盐研究所 | Passive and wireless pressure, temperature integrated sensor based on LTCC and preparation method thereof |
| WO2020057080A1 (en) * | 2018-09-18 | 2020-03-26 | 东南大学 | Multi-parameter lc sensor for monitoring state of rotating structure |
| CN109813931A (en) * | 2019-01-25 | 2019-05-28 | 中北大学 | High-range acceleration transducer ceramic silicon ceramic three-layer leadless packaging structure |
| CN109813931B (en) * | 2019-01-25 | 2021-04-02 | 中北大学 | Ceramic silicon ceramic three-layer leadless packaging structure of high-range acceleration sensor |
| CN110542455A (en) * | 2019-09-16 | 2019-12-06 | 中北大学 | HTCC composite microsensor for pressure/vibration synchronous measurement and preparation method thereof |
| CN110542455B (en) * | 2019-09-16 | 2021-11-05 | 中北大学 | HTCC composite microsensor for pressure/vibration synchronous measurement and preparation method thereof |
| CN111829559A (en) * | 2020-06-24 | 2020-10-27 | 东南大学 | Method for realizing multi-parameter measurement of PT symmetrical LC passive wireless sensing system |
| CN111829559B (en) * | 2020-06-24 | 2022-07-08 | 东南大学 | Method for realizing multi-parameter measurement of PT symmetrical LC passive wireless sensing system |
| CN112378424A (en) * | 2020-11-13 | 2021-02-19 | 中北大学 | Wireless passive strain and temperature dual-parameter sensor and preparation method thereof |
| CN112378424B (en) * | 2020-11-13 | 2022-06-14 | 中北大学 | Wireless passive strain and temperature dual-parameter sensor and preparation method thereof |
| CN114705227A (en) * | 2022-04-27 | 2022-07-05 | 东南大学 | LC three-parameter rapid measurement circuit based on FFT |
| CN114705227B (en) * | 2022-04-27 | 2023-12-19 | 东南大学 | LC three-parameter rapid measurement circuit based on FFT |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103471653B (en) | 2015-08-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103471653A (en) | High temperature wireless passive three-parameter-integrated sensor based on co-firing ceramic technology | |
| CN103698060B (en) | Wireless and passive high-temp pressure sensor with temperature compensation and temperature compensation algorithm thereof | |
| CN103278181B (en) | A kind of wireless sensing circuit of passive LC resonator sensor | |
| WO2017166573A1 (en) | Method and apparatus for detecting battery temperature and id | |
| CN103134606A (en) | Differential type acoustic surface wave temperature sensor | |
| CN102636204B (en) | Self-numbering surface acoustic wave (SAW) passive and wireless resonance type sensor | |
| WO2019223356A1 (en) | Primary and secondary device deep integration voltage sensor, and design process method therefor | |
| CN104596564A (en) | System and method for judging fault of sensor | |
| CN104713596A (en) | Intelligent monitoring system and monitoring method for terahertz experimental environment | |
| CN105318901A (en) | Surface acoustic wave resonator type impedance sensor and surface acoustic wave resonator type impedance detection system | |
| CN103674405A (en) | Differential type HTCC wireless passive high-temperature pressure sensor and manufacturing method thereof | |
| CN203132736U (en) | Differential surface-acoustic-wave temperature sensor | |
| CN2837787Y (en) | Temperature and humidity sensor | |
| Ji et al. | Wireless passive separated LC temperature sensor based on high-temperature co-fired ceramic operating up to 1500° C | |
| CN109828020A (en) | A kind of Metal Crack detection system and method | |
| CN109916968B (en) | Accurate measurement method and device of capacitance type grain moisture sensor | |
| CN108418580B (en) | Method for measuring stability of phase-locked loop in central processing unit through frequency meter | |
| CN105953934A (en) | LC type passive wireless temperature sensor based on thermal double-layer execution beam | |
| CN103746720B (en) | Wireless communication module method of adjustment | |
| US20130193983A1 (en) | Jig for measuring emc of semiconductor chip and method for measuring emc of semiconductor chip using the same | |
| WO2015152641A1 (en) | Inductive sensor circuit | |
| CN202677120U (en) | Sensor device used for automobile to detect gas temperature and gas pressure of intake manifold | |
| CN206627188U (en) | A kind of piezoelectric resonator declines mass measurement system | |
| CN204115901U (en) | Electric thermo-couple temperature collection system | |
| CN204666227U (en) | Magnetic pulse liquid level gauge |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |