CN103469292B - A kind of polysilicon chip and preparation method thereof - Google Patents
A kind of polysilicon chip and preparation method thereof Download PDFInfo
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- CN103469292B CN103469292B CN201310389099.4A CN201310389099A CN103469292B CN 103469292 B CN103469292 B CN 103469292B CN 201310389099 A CN201310389099 A CN 201310389099A CN 103469292 B CN103469292 B CN 103469292B
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Abstract
The invention discloses a kind of polysilicon chip and preparation method thereof, first, crucible is provided, described crucible bottom is divided into one or more target area, described target area is made up of target pattern region and non-targeted area of the pattern, different for grain-size two kinds of seed crystals are laid on described target pattern region and described non-targeted area of the pattern respectively, obtain inculating crystal layer; Then on described inculating crystal layer, silicon material is loaded, heating makes silicon material fusing in described crucible form silicon melt, thermal field is regulated to form supercooled state, described silicon melt is started on described inculating crystal layer basis long brilliant, on polysilicon chip, obtain the pattern consistent or similar with described target pattern after long crystalline substance completes, make polysilicon chip more attractive in appearance and more easy to identify.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of polysilicon chip and preparation method thereof.
Background technology
In recent years, sun power has become the focus of people's R and D as a kind of emerging renewable green energy resource.Along with the fast development of solar cell industry, cost is low and the polysilicon chip being suitable for large-scale production becomes topmost photovoltaic material in industry.
Existing polysilicon chip, the pattern of silicon chip surface outward appearance crystal grain is out-of-order, mixed and disorderly, the polysilicon chip of therefore dissimilar polysilicon chip and different manufacturer is only difficult to make a distinction according to the outward appearance of silicon chip, although can distinguish silicon chip surface is labelled, but label easily comes off, use inconvenience.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of preparation method of polysilicon chip, two kinds of different seed crystals of grain-size are laid in crucible bottom when preparing polysilicon chip, obtain inculating crystal layer, then on inculating crystal layer, silicon material is loaded, the fusing of silicon material forms silicon melt and carry out long crystalline substance on inculating crystal layer basis, can obtain the pattern consistent or similar with target pattern after long crystalline substance completes on polysilicon chip, has and increases the effect that silicon chip is attractive in appearance, be easy to silicon chip identification.
A preparation method for polysilicon chip, comprises the following steps:
(1) crucible is provided, described crucible bottom is divided into one or more target area, described target area is made up of target pattern region and non-targeted area of the pattern, different for grain-size two kinds of seed crystals are laid on described target pattern region and described non-targeted area of the pattern respectively, obtain inculating crystal layer;
(2) on described inculating crystal layer, load silicon material, heating makes silicon material fusing in described crucible form silicon melt, and controls the fusing point of described crucible bottom temperature lower than described seed crystal, and described inculating crystal layer is not melted completely;
(3) when the solid-liquid interface formed when described silicon melt and unfused inculating crystal layer is just in inculating crystal layer or gos deep into inculating crystal layer, thermal field is regulated to form supercooled state, described silicon melt is started on described inculating crystal layer basis long brilliant, after whole silicon melt crystallization is complete, obtain polycrystal silicon ingot through annealing cooling;
(4) described polycrystal silicon ingot is prepared described polysilicon chip through section and cleaning successively.
Preferably, the grain-size difference of described two kinds of seed crystals is >=5mm;
Preferably, the concrete operations of step (1) are:
Be that the little seed crystal of 1mm ~ 5mm is laid on described target pattern region by grain-size, obtain target pattern, then be that the large seed crystal of 10mm ~ 30mm is laid on described non-targeted area of the pattern by grain-size, obtain described inculating crystal layer; Or
Be that the large seed crystal of 10mm ~ 30mm is laid on described target pattern region by grain-size, obtain target pattern, then be that the little seed crystal of 1mm ~ 5mm is laid on described non-targeted area of the pattern by grain-size, obtain described inculating crystal layer; Or
A single die is laid on described target pattern region, obtains target pattern, then be that the little seed crystal of 1mm ~ 5mm is laid on described non-targeted area of the pattern by grain-size, obtain described inculating crystal layer; Or
Be that the little seed crystal of 1mm ~ 5mm is laid on described target pattern region by grain-size, obtain target pattern, then a single die is laid on described non-targeted area of the pattern, obtain described inculating crystal layer.
Preferably, described single die is the continuous print large size single crystal cut down from monocrystalline main body.
When single die being laid on described target pattern region, when obtaining target pattern, first to cut single die, making the shape of single die and target pattern and in the same size;
When the little seed crystal by grain-size being 1mm ~ 5mm is laid on described target pattern region, obtain target pattern, when again a single die being laid on described non-targeted area of the pattern, cut described single die, described single die is made to have the openwork part consistent with target pattern size and shape, the openwork part of described single die and target pattern overlap, and obtain described inculating crystal layer.
Preferably, the thickness of described inculating crystal layer is 1cm ~ 5cm.
Preferably, described large seed crystal and little seed crystal are polycrystalline or monocrystalline.
Preferably, described crucible bottom is divided into the target area of multiple array distribution.
Preferably, described target pattern is at least one in word and figure.
Described target pattern can be word as " in " or " A " etc., also can be that figure is as "○", " " " ☆ " etc.
Preferably, when the target area quantity of described crucible bottom is greater than one, the described target pattern in target area described in each can be identical or different.Such as 6 target areas are set in described crucible bottom, 6 target patterns in 6 target areas can identical (be such as word " in "), also can part identical (such as 6 target patterns be 3 words " in " and three figure "○"), or 6 target patterns all not identical (such as 6 target patterns are respectively " in ", " A ", "○", " ", " 1 " and " L ").
Preferably, the method of described step (1) is: provide the template with openwork part, described openwork part is consistent with the size and shape in target pattern region, described template is placed in crucible bottom, by a kind of openwork part being laid on template in different for grain-size two kinds of seed crystals, obtain target pattern, take out template, lay another in the different seed crystal of described two kinds of grain-sizes at described non-targeted area of the pattern, obtain described inculating crystal layer.
The present invention is being prepared in polysilicon chip process owing to adopting the seed crystal of various grain sizes to be laid on crucible bottom, silicon material fusing on inculating crystal layer forms silicon melt, described silicon melt is inherited the grain-size of large and small seed crystal or single die and is carried out vertical-growth on described seed crystal, thus on polysilicon chip, form the region of different grain density, polysilicon chip demonstrates the pattern consistent or similar with described target pattern.The present invention can form different patterns according to different demands, overcomes existing polysilicon chip outward appearance chaotic and shortcoming not easy to identify, improves the aesthetic feeling of silicon chip and property easy to identify.
Present invention also offers a kind of polysilicon chip, described polysilicon chip is prepared by aforesaid method.
Polysilicon chip of the present invention has the pattern consistent or similar with described target pattern, described pattern can not affect the quality and performance of polysilicon chip, also can increase the aesthetic appearance of silicon chip, and is conducive to the identification to polysilicon chip.
In polysilicon chip arranges the word containing corporate culture or figure, the effect of propagating corporate culture can be played.
Implement the embodiment of the present invention, there is following beneficial effect:
Polysilicon chip outward appearance of the present invention has the pattern consistent or similar with described target pattern, is different from the outward appearance of prior art silicon chip chaotic, improves the aesthetic feeling of silicon chip;
The polysilicon chip of one species or same manufacturer arranges required pattern, obviously can be different from the polysilicon chip of other kinds or other producers, be easy to identify and false proof; In polysilicon chip arranges the word containing corporate culture or figure, the effect of propagating corporate culture can be played;
The present invention creatively forms the pattern consistent or similar with described target pattern on polysilicon chip, and can arrange different patterns according to different demands, method simple practical.
Accompanying drawing explanation
In order to be illustrated more clearly in technical scheme of the present invention, be briefly described to the accompanying drawing used required in embodiment below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the procedure chart that the embodiment of the present invention 1 lays seed crystal when preparing polysilicon chip;
Fig. 2 is the photo of polysilicon chip prepared by the embodiment of the present invention 1;
Fig. 3 is the procedure chart that the embodiment of the present invention 3 lays seed crystal when preparing polysilicon chip.
Embodiment
Below in conjunction with the accompanying drawing in embodiment of the present invention, the technical scheme in embodiment of the present invention is clearly and completely described.
Embodiment 1
A preparation method for polysilicon chip, comprises following operation steps:
(1) crucible is provided, crucible bottom is divided into the target area of 25 array distribution, target area is made up of " LD " target pattern region and non-targeted area of the pattern, be that the little seed crystal of 1mm is laid on " LD " target pattern region by grain-size, obtain target pattern " LD ", be that the large seed crystal of 30mm is laid on non-targeted area of the pattern by grain-size, obtain the inculating crystal layer that thickness is 1cm;
(2) on inculating crystal layer, load silicon material, heating makes silicon material fusing in crucible form silicon melt, and controls the fusing point of crucible bottom temperature lower than seed crystal, and inculating crystal layer is not melted completely;
(3) when the solid-liquid interface formed when silicon melt and unfused inculating crystal layer is just in inculating crystal layer or gos deep into inculating crystal layer, thermal field is regulated to form supercooled state, silicon melt is started on inculating crystal layer basis long brilliant, after whole silicon melt crystallization is complete, obtain polycrystal silicon ingot through annealing cooling;
(4) polycrystal silicon ingot is prepared polysilicon chip through evolution, section and cleaning successively.
Fig. 1 is the procedure chart that the embodiment of the present invention 1 lays seed crystal when preparing polysilicon chip, first multiple little seed crystal (1 represents) is laid on target pattern region, obtain the pattern of " LD ", then non-targeted area of the pattern lays multiple large seed crystal (2 represent), obtains inculating crystal layer.
Fig. 2 is the photo of polysilicon chip prepared by the embodiment of the present invention 1, as can be seen from Figure 2, polysilicon chip demonstrates " LD " pattern (empty wire frame representation), crucible bottom is laid owing to adopting the seed crystal of various grain sizes, silicon material fusing on inculating crystal layer forms silicon melt, the grain-size that silicon melt inherits seed crystal on seed crystal grows, thus on polysilicon chip, form the region of different grain density, demonstrates " LD " pattern.
Embodiment 2
A preparation method for polysilicon chip, comprises following operation steps:
(1) crucible is provided, crucible bottom is divided into the target area of 9 array distribution, target area is made up of " LD " target pattern region and non-targeted area of the pattern, be that the large seed crystal of 10mm is laid on " LD " target pattern region by grain-size, obtain target pattern " LD ", be that the little seed crystal of 5mm is laid on non-targeted area of the pattern by grain-size, obtain the inculating crystal layer that thickness is 5cm;
(2) on inculating crystal layer, load silicon material, heating makes silicon material fusing in crucible form silicon melt, and controls the fusing point of crucible bottom temperature lower than seed crystal, and inculating crystal layer is not melted completely;
(3) when the solid-liquid interface formed when silicon melt and unfused inculating crystal layer is just in inculating crystal layer or gos deep into inculating crystal layer, thermal field is regulated to form supercooled state, silicon melt is started on inculating crystal layer basis long brilliant, after whole silicon melt crystallization is complete, obtain polycrystal silicon ingot through annealing cooling;
(4) polycrystal silicon ingot is prepared polysilicon chip through evolution, section and cleaning successively.
Embodiment 3
A preparation method for polysilicon chip, comprises following operation steps:
(1) crucible is provided, crucible bottom is divided into the target area of 25 array distribution, target area is made up of " LD " target pattern region and non-targeted area of the pattern, be that the little seed crystal of 3mm is laid on " LD " target pattern region by grain-size, obtain target pattern " LD ", then the single die with the openwork part consistent with shape with " LD " pattern magnitude is got, single die is laid on non-targeted area of the pattern, the openwork part of single die and " LD " pattern registration, obtain the inculating crystal layer that thickness is 3cm;
(2) on inculating crystal layer, load silicon material, heating makes silicon material fusing in crucible form silicon melt, and controls the fusing point of crucible bottom temperature lower than seed crystal, and inculating crystal layer is not melted completely;
(3) when the solid-liquid interface formed when silicon melt and unfused inculating crystal layer is just in inculating crystal layer or gos deep into inculating crystal layer, thermal field is regulated to form supercooled state, silicon melt is started on inculating crystal layer basis long brilliant, after whole silicon melt crystallization is complete, obtain polycrystal silicon ingot through annealing cooling;
(4) polycrystal silicon ingot is prepared polysilicon chip through evolution, section and cleaning successively.
Fig. 3 is the procedure chart that the embodiment of the present invention 3 lays seed crystal when preparing polysilicon chip, first multiple little seed crystal (1 represents) is laid on target pattern region, obtain " LD " target pattern, then a single die (3 represent) with the openwork part consistent with " LD " pattern is got, single die is laid on non-targeted area of the pattern, the openwork part of this single die and " LD " pattern registration, to inculating crystal layer.
Embodiment 4
A preparation method for polysilicon chip, comprises following operation steps:
(1) crucible is provided, crucible bottom is divided into the target area of 25 array distribution, target area is made up of " LD " target pattern region and non-targeted area of the pattern, then the template of the openwork part with 25 array distribution is provided, this openwork part is consistent with the size and shape in target pattern region, this template is placed in crucible bottom, it is the openwork part that the little seed crystal of 1mm is laid on template by grain-size, obtain target pattern " LD ", take out template, the large seed crystal that grain-size is 10mm is laid at non-targeted area of the pattern, obtain the inculating crystal layer that thickness is 1cm,
(2) on inculating crystal layer, load silicon material, heating makes silicon material fusing in crucible form silicon melt, and controls the fusing point of crucible bottom temperature lower than seed crystal, and inculating crystal layer is not melted completely;
(3) when the solid-liquid interface formed when silicon melt and unfused inculating crystal layer is just in inculating crystal layer or gos deep into inculating crystal layer, thermal field is regulated to form supercooled state, silicon melt is started on inculating crystal layer basis long brilliant, after whole silicon melt crystallization is complete, obtain polycrystal silicon ingot through annealing cooling;
(4) polycrystal silicon ingot is prepared polysilicon chip through evolution, section and cleaning successively.
Embodiment 5
A preparation method for polysilicon chip, comprises following operation steps:
(1) crucible is provided, crucible bottom is divided into the target area of 9 array distribution, target area is made up of " LD " target pattern region and non-targeted area of the pattern, then the template of the openwork part with 9 array distribution is provided, this openwork part is consistent with the size and shape in target pattern region, this template is placed in crucible bottom, it is the openwork part that the large seed crystal of 30mm is laid on template by grain-size, obtain target pattern " LD ", take out template, the little seed crystal that grain-size is 5mm is laid at non-targeted area of the pattern, obtain the inculating crystal layer that thickness is 3cm,
(2) on inculating crystal layer, load silicon material, heating makes silicon material fusing in crucible form silicon melt, and controls the fusing point of crucible bottom temperature lower than seed crystal, and inculating crystal layer is not melted completely;
(3) when the solid-liquid interface formed when silicon melt and unfused inculating crystal layer is just in inculating crystal layer or gos deep into inculating crystal layer, thermal field is regulated to form supercooled state, silicon melt is started on inculating crystal layer basis long brilliant, after whole silicon melt crystallization is complete, obtain polycrystal silicon ingot through annealing cooling;
(4) polycrystal silicon ingot is prepared polysilicon chip through evolution, section and cleaning successively.
Embodiment 6
A preparation method for polysilicon chip, comprises following operation steps:
(1) crucible is provided, crucible bottom is divided into the target area of 9 array distribution, target area is made up of " LD " target pattern region and non-targeted area of the pattern, then the template of the openwork part with 9 array distribution is provided, this openwork part is consistent with the size and shape in target pattern region, this template is placed in crucible bottom, it is the openwork part that the large seed crystal of 15mm is laid on template by grain-size, obtain target pattern " LD ", take out template, the little seed crystal that grain-size is 3mm is laid at non-targeted area of the pattern, obtain the inculating crystal layer that thickness is 5cm,
(2) on inculating crystal layer, load silicon material, heating makes silicon material fusing in crucible form silicon melt, and controls the fusing point of crucible bottom temperature lower than seed crystal, and inculating crystal layer is not melted completely;
(3) when the solid-liquid interface formed when silicon melt and unfused inculating crystal layer is just in inculating crystal layer or gos deep into inculating crystal layer, thermal field is regulated to form supercooled state, silicon melt is started on described inculating crystal layer basis long brilliant, after whole silicon melt crystallization is complete, obtain polycrystal silicon ingot through annealing cooling;
(4) polycrystal silicon ingot is prepared polysilicon chip through evolution, section and cleaning successively.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (9)
1. a preparation method for polysilicon chip, is characterized in that, comprises the following steps:
(1) crucible is provided, described crucible bottom is divided into one or more target area, described target area is made up of target pattern region and non-targeted area of the pattern, different for grain-size two kinds of seed crystals are laid on described target pattern region and described non-targeted area of the pattern respectively, obtain inculating crystal layer; The grain-size difference of described two kinds of seed crystals is >=5mm;
(2) on described inculating crystal layer, load silicon material, heating makes silicon material fusing in described crucible form silicon melt, and controls the fusing point of described crucible bottom temperature lower than described seed crystal, and described inculating crystal layer is not melted completely;
(3) when the solid-liquid interface formed when described silicon melt and unfused inculating crystal layer is just in described inculating crystal layer or gos deep into described inculating crystal layer, thermal field is regulated to form supercooled state, described silicon melt is started on described inculating crystal layer basis long brilliant, after whole silicon melt crystallization is complete, obtain polycrystal silicon ingot through annealing cooling;
(4) described polycrystal silicon ingot is prepared described polysilicon chip through section and cleaning successively.
2. preparation method as claimed in claim 1, it is characterized in that, the concrete operations of step (1) are:
Be that the little seed crystal of 1mm ~ 5mm is laid on described target pattern region by grain-size, obtain target pattern, then be that the large seed crystal of 10mm ~ 30mm is laid on described non-targeted area of the pattern by grain-size, obtain described inculating crystal layer; Or
Be that the large seed crystal of 10mm ~ 30mm is laid on described target pattern region by grain-size, obtain target pattern, then be that the little seed crystal of 1mm ~ 5mm is laid on described non-targeted area of the pattern by grain-size, obtain described inculating crystal layer; Or
A single die is laid on described target pattern region, obtains target pattern, then be that the little seed crystal of 1mm ~ 5mm is laid on described non-targeted area of the pattern by grain-size, obtain described inculating crystal layer; Or
Be that the little seed crystal of 1mm ~ 5mm is laid on described target pattern region by grain-size, obtain target pattern, then a single die is laid on described non-targeted area of the pattern, obtain described inculating crystal layer.
3. preparation method as claimed in claim 2, it is characterized in that, described large seed crystal and little seed crystal are polycrystalline or monocrystalline.
4. preparation method as claimed in claim 2, it is characterized in that, described single die is the continuous print monocrystalline cut down from monocrystalline main body.
5. preparation method as claimed in claim 1, it is characterized in that, the thickness of described inculating crystal layer is 1cm ~ 5cm.
6. preparation method as claimed in claim 1, is characterized in that, described crucible bottom is divided into the target area of multiple array distribution.
7. preparation method as claimed in claim 1, is characterized in that, described target pattern is at least one in word and figure; When the target area quantity of described crucible bottom is greater than one, the described target pattern in target area described in each is identical or different.
8. preparation method as claimed in claim 1, it is characterized in that, the method of described step (1) is: provide the template with openwork part, described openwork part is consistent with the size and shape in target pattern region, described template is placed in crucible bottom, by a kind of openwork part being laid on described template in different for grain-size two kinds of seed crystals, obtain target pattern, take out described template, lay another in the different seed crystal of described two kinds of grain-sizes at described non-targeted area of the pattern, obtain described inculating crystal layer.
9. a polysilicon chip, is characterized in that, described polysilicon chip is for obtaining according to the preparation method described in any one of claim 1 ~ 8.
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