CN103457561B - A kind of multichannel input microwave gain control module - Google Patents
A kind of multichannel input microwave gain control module Download PDFInfo
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Abstract
The present invention relates to a kind of multichannel input microwave gain control module, it is characterised in that including: input high-power signal is carried out the limiter protection circuit of amplitude restriction；Destination channel is carried out the switch selection circuit of signal behavior；To entering the gain control circuit that module by signal is amplified, leads directly to or decay；The module control circuit that switch selection circuit and gain control circuit are controlled.Instant invention overcomes traditional microwave gain control module function singleness, the shortcoming that volume is big, poor stability, index are low, meet the requirement of modern wireless telecommunication system module high-performance, high reliability, volume miniaturization, there is the advantage that difficulty of processing is little, cost is low, lightweight and integrated functionality is many, can also pass through to select the switching branches of different branch and different conditions can form the microwave receiving module of multiple scale and function flexibly, it is possible to meet multiple reception systematic difference requirement.
Description
Technical field
The present invention relates to Controller Circuit Used in Microwave Power Amplifier technical field, particularly relate to a kind of multichannel input microwave gain control module.
Background technology
Gain control module is module conventional in wireless receiving system, plays a part to carry out to received signal amplitude adjusted；Along with the fast development of modern wireless telecommunication system and electronic equipment, one of gain control circuit key becoming Circuits System of research broadband, Larger Dynamic and flexible control mode.
Traditional microwave gain control module is generally spliced by cable by multiple modules such as single switch, amplifier, attenuators, has function singleness, volume is big, poor stability, index are a low shortcoming；Along with the requirement of modern wireless telecommunication system is more and more higher, the requirement of microwave gain control module constantly being promoted, simultaneously improving constantly along with wireless telecommunication system frequency, the microwave gain control module of traditional approach can not meet system index requirement.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, provide a kind of multichannel input microwave gain control module, meet the requirement of modern wireless telecommunication system module high-performance, high reliability, volume miniaturization, there is the advantage that difficulty of processing is little, cost is low, lightweight and integrated functionality is many, can also pass through to select the switching branches of different branch and different conditions can form the microwave receiving module of multiple scale and function flexibly, it is possible to meet multiple reception systematic difference requirement.
The main technical schemes that the present invention adopts is: a kind of multichannel input microwave gain control module, it is characterised in that including:
Input high-power signal is carried out the limiter protection circuit of amplitude restriction; the IN1 branch road of described limiter protection circuit includes 4 amplitude limits PIN diode D1, D2, D3, D4; described amplitude limit PIN diode D1, D2, D3, D4 adopt parallel form to fill on the microstrip line; wherein the positive pole of amplitude limit PIN diode D1, D2, D3 connects microstrip line; negative pole is ground connection respectively; the negative pole of amplitude limit PIN diode D4 connects microstrip line, plus earth；The IN2 branch road of described limiter protection circuit includes 4 amplitude limits PIN diode D15, D17, D19, D21; described amplitude limit PIN diode D15, D17, D19, D21 adopt parallel form to fill on the microstrip line; wherein the positive pole of amplitude limit PIN diode D15, D17, D19 connects microstrip line; negative pole is ground connection respectively; the negative pole of amplitude limit PIN diode D21 connects microstrip line, plus earth；The IN3 branch road of described limiter protection circuit includes 4 amplitude limits PIN diode D16, D18, D20, D22; described amplitude limit PIN diode D16, D18, D20, D22 adopt parallel form to fill on the microstrip line; wherein the positive pole of amplitude limit PIN diode D16, D18, D20 connects microstrip line; negative pole is ground connection respectively; the negative pole of amplitude limit PIN diode D22 connects microstrip line, plus earth；The IN4 branch road of described limiter protection circuit includes 4 amplitude limits PIN diode D35, D36, D37, D38; described amplitude limit PIN diode D35, D36, D37, D38 adopt parallel form to fill on the microstrip line; wherein the positive pole of amplitude limit PIN diode D35, D36, D37 connects microstrip line; negative pole is ground connection respectively; the negative pole of amplitude limit PIN diode D38 connects microstrip line, plus earth；
Destination channel is carried out the switch selection circuit of signal behavior, the IN1 branch road of described switch selection circuit includes 4 switch PIN diode D5, D6, D7, D8, described switch PIN diode D5, D6, D7 adopt parallel-connection structure, negative pole is ground connection respectively, positive pole is connected with microstrip line, described switch PIN diode D8 adopts cascaded structure to fill on the microstrip line, and the positive pole of the negative pole of described switch PIN diode D8 and described switch PIN diode D5, D6, D7 is respectively connected with；The IN2 branch road of described switch selection circuit includes 4 switch PIN diode D23, D25, D27, D29, described switch PIN diode D23, D25, D27 adopt parallel-connection structure, negative pole is ground connection respectively, positive pole is connected with microstrip line, described switch PIN diode D29 adopts cascaded structure to fill on the microstrip line, and the positive pole of the negative pole of described switch PIN diode D29 and described switch PIN diode D23, D25, D27 is respectively connected with；The IN3 branch road of described switch selection circuit includes 4 switch PIN diode D24, D26, D28, D30, described switch PIN diode D24, D26, D28 adopt parallel-connection structure, negative pole is ground connection respectively, positive pole is connected with microstrip line, described switch PIN diode D30 adopts cascaded structure to fill on the microstrip line, and the positive pole of the negative pole of described switch PIN diode D30 and described switch PIN diode D24, D26, D28 is respectively connected with；The IN4 branch road of described switch selection circuit includes 4 switch PIN diode D39, D40, D41, D42, described switch PIN diode D39, D40, D41 adopt parallel-connection structure, negative pole is ground connection respectively, positive pole is connected with microstrip line, described switch PIN diode D42 adopts cascaded structure to fill on the microstrip line, and the positive pole of the negative pole of described switch PIN diode D42 and described switch PIN diode D39, D40, D41 is respectively connected with；
To entering the gain control circuit that module by signal is amplified, leads directly to or decay；
The module control circuit that switch selection circuit and gain control circuit are controlled.
The present invention also adopts following attached technical scheme:
Signal amplitude≤+ the 10dBm of output after limiter protection circuit amplitude limit.
The amplitude limit PIN diode quantity of limiter protection circuit IN1～IN4 every branch road can also be 3,5 or 6.
The switch PIN diode quantity of switch selection circuit IN1～IN4 every branch road can also be 3,5 or 6.
The use frequency of switch selection circuit is 30MHz～3000MHz.
Gain control circuit includes LNA branch road 301, straight-through branch road 302, decay branch road 303, the diode D9 and diode D14 of described LNA branch road 301 adopts cascaded structure to fill on the microstrip line, wherein the positive pole of diode D9 is connected with inductance L7, the positive pole of diode D14 is connected with inductance L11, diode D10～D13 adopts parallel-connection structure, negative pole is ground connection respectively, positive pole is connected with microstrip line, low-noise amplifier N1 is carried out impedance matching filled on the microstrip line by electric capacity C2, electric capacity C3, electric capacity C12, inductance L4, provides power supply by biasing circuit Bias7；The diode D31 and diode D33 of described straight-through branch road adopts cascaded structure to fill on the microstrip line, wherein the positive pole of diode D31 is connected with inductance L7, the positive pole of diode D33 is connected with inductance L11, diode D32 and diode D34 adopts parallel-connection structure, negative pole is ground connection respectively, positive pole is connected with microstrip line, provides power supply by biasing circuit Bias8；The diode D43 and diode D48 of described decay branch road 303 adopts cascaded structure to fill on the microstrip line, wherein the positive pole of diode D43 is connected with inductance L7, the positive pole of diode D48 is connected with inductance L11, diode D44～D47 adopts parallel-connection structure, negative pole is ground connection respectively, positive pole is connected with microstrip line, resistance R5, resistance R6, resistance R7 constitute π type attenuation network, resistance R8, resistance R9, resistance R10 constitute π type attenuation network, by the cascade of two π type attenuation networks, constitute 30dB decay branch road 303.
nullModule control circuit includes control level B1～B4、Diode D49～D52、TTL/COMS compatible decoder N2～N3、Reverse proportion operational amplifier N4～N5，The positive pole of described diode D49～D52 is ground connection respectively，Negative pole is connected with microstrip line，Described control level B1 connects with resistance R2，Described control level B2 connects with resistance R1，Described control level B3 connects with resistance R4，Described control level B4 connects with resistance R3，The pin A02 of described TTL/COMS compatible decoder N2 is connected with resistance R2，Pin A12 is connected with resistance R1，Pin A22、Pin E12 and pin E22 ground connection，Pin E32 and pin VCC2 connects+5V power supply，Pin Y02 meets the pin H34 of reverse proportion operational amplifier N4，Pin Y12 meets the pin H44 of reverse proportion operational amplifier N4，Pin Y22 meets the pin H24 of reverse proportion operational amplifier N4，Pin Y32 meets the pin H14 of reverse proportion operational amplifier N4；The pin A03 of described TTL/COMS compatible decoder N3 is connected with resistance R4, pin A13 is connected with resistance R3, pin A23, pin E13 and pin E23 ground connection, pin E33 and pin VCC3 connects+5V power supply, pin Y03 meets the pin H15 of reverse proportion operational amplifier N5, pin Y13 meets the pin H35 of reverse proportion operational amplifier N5, pin Y23 and meets the pin H25 of reverse proportion operational amplifier N5；The pin OUT34 connecting resistance R11 of described reverse proportion operational amplifier N4, pin OUT44 connecting resistance R12, pin OUT14 connecting resistance R13, pin OUT24 connecting resistance R14；The pin OUT35 connecting resistance R15 of described reverse proportion operational amplifier N5, pin OUT15 connecting resistance R16, pin OUT25 connecting resistance R17.
Module control circuit has 12 kinds of states and controls function, table specific as follows:
The present invention is adopted to have the benefit that the requirement meeting modern wireless telecommunication system module high-performance, high reliability, volume miniaturization, there is the advantage that difficulty of processing is little, cost is low, lightweight and integrated functionality is many, can also pass through to select the switching branches of different branch and different conditions can form the microwave receiving module of multiple scale and function flexibly, it is possible to meet multiple reception systematic difference requirement.
Accompanying drawing explanation
It is described further below in conjunction with accompanying drawing:
Fig. 1 is the structure principle chart of a kind of multichannel input microwave gain control module of the present invention.
Fig. 2 is the structure principle chart of limiter protection circuit of the present invention and switch selection circuit.
Fig. 3 is the structure principle chart of gain control circuit of the present invention.
Fig. 4 is the structure principle chart of module control circuit of the present invention.
Detailed description of the invention
As it is shown in figure 1, a kind of multichannel input microwave gain control module, including:
Input high-power signal is carried out the limiter protection circuit of amplitude restriction；
Destination channel is carried out the switch selection circuit of signal behavior；
To entering the gain control circuit that module by signal is amplified, leads directly to or decay；
The module control circuit that switch selection circuit and gain control circuit are controlled.
In Fig. 2 shown in dotted box 201, a kind of limiter protection circuit of multichannel input microwave gain control module, 4 amplitude limit PIN diode D1, D2, D3, D4 adopts parallel form to fill on the microstrip line, wherein amplitude limit PIN diode D1, D2, the positive pole of D3 connects microstrip line, negative pole is ground connection respectively, the negative pole of amplitude limit PIN diode D4 connects microstrip line, plus earth, after high-power signal enters IN1 branch road, through amplitude limit PIN diode D1, D2, D3, D4 carries out multistage amplitude limit, make the signal amplitude≤+ 10dBm of output after amplitude limit, thus protecting late-class circuit not to be burned, the maximum 5W of bearing continuous wave does not burn；In like manner; 4 amplitude limits PIN diode D15, D17, D19, D21 adopt parallel form to fill on the microstrip line; wherein the positive pole of amplitude limit PIN diode D15, D17, D19 connects microstrip line; negative pole is ground connection respectively; the negative pole of amplitude limit PIN diode D21 connects microstrip line; plus earth; after high-power signal enters IN2 branch road; multistage amplitude limit is carried out through amplitude limit PIN diode D15, D17, D19, D21; make the signal amplitude≤+ 10dBm of output after amplitude limit; thus protecting late-class circuit not to be burned, the maximum 5W of bearing continuous wave does not burn；4 amplitude limits PIN diode D16, D18, D20, D22 adopt parallel form to fill on the microstrip line; wherein the positive pole of amplitude limit PIN diode D16, D18, D20 connects microstrip line; negative pole is ground connection respectively; the negative pole of amplitude limit PIN diode D22 connects microstrip line; plus earth; after high-power signal enters IN3 branch road; multistage amplitude limit is carried out through amplitude limit PIN diode D16, D18, D20, D22; make the signal amplitude≤+ 10dBm of output after amplitude limit; thus protecting late-class circuit not to be burned, the maximum 5W of bearing continuous wave does not burn；4 amplitude limits PIN diode D35, D36, D37, D38 adopt parallel form to fill on the microstrip line; wherein the positive pole of amplitude limit PIN diode D35, D36, D37 connects microstrip line; negative pole is ground connection respectively; the negative pole of amplitude limit PIN diode D38 connects microstrip line; plus earth; after high-power signal enters IN4 branch road; multistage amplitude limit is carried out through amplitude limit PIN diode D35, D36, D37, D38; make the signal amplitude≤+ 10dBm of output after amplitude limit; thus protecting late-class circuit not to be burned, the maximum 5W of bearing continuous wave does not burn.Additionally, the amplitude limit PIN diode quantity of limiter protection circuit IN1～IN4 every branch road is also designed to 3,5 or 6.
nullIn Fig. 2 shown in dotted box 202，A kind of switch selection circuit of multichannel input microwave gain control module，Namely four a hilted broadsword four-throw on-off circuit is selected，When destination channel is IN1 branch road，Switch PIN diode D5、D6、D7 adopts parallel-connection structure，Negative pole is ground connection respectively，Positive pole is connected with microstrip line，Switch PIN diode D8 adopts cascaded structure to fill on the microstrip line，The negative pole of switch PIN diode D8 and switch PIN diode D5、D6、The positive pole of D7 is respectively connected with，When biasing circuit Bias1 is by inductance L1、When electric capacity C9 inputs-5V voltage，Switch PIN diode D5、D6、D7 is reverse-biased，Switch PIN diode D8 positively biased，Branch road IN1 is strobed，Such that it is able to making signal low-loss by branch road IN1，Now branch road IN2～IN4 biasing circuit input+5V voltage，Switch PIN diode D23～D28 and switch PIN diode D39～D41 positively biased，Switch PIN diode D29、D30、D42 is reverse-biased，It is in high isolation state；nullWhen destination channel is IN2 branch road，Switch PIN diode D23、D25、D27 adopts parallel-connection structure，Negative pole is ground connection respectively，Positive pole is connected with microstrip line，Switch PIN diode D29 adopts cascaded structure to fill on the microstrip line，The negative pole of switch PIN diode D29 and switch PIN diode D23、D25、The positive pole of D27 is respectively connected with，When biasing circuit Bias2 is by inductance L2、When electric capacity C10 inputs-5V voltage，Switch PIN diode D23、D25、D27 is reverse-biased，Switch PIN diode D29 positively biased，Branch road IN2 is strobed，Such that it is able to making signal low-loss by branch road IN2，Now branch road IN1、IN3、IN4 biasing circuit input+5V voltage，Switch PIN diode D5～D7 and switch PIN diode D24、D26、D28 and switch PIN diode D39～D41 positively biased，Switch PIN diode D8、D30、D42 is reverse-biased，It is in high isolation state；nullWhen destination channel is IN3 branch road，Switch PIN diode D24、D26、D28 adopts parallel-connection structure，Negative pole is ground connection respectively，Positive pole is connected with microstrip line，Switch PIN diode D30 adopts cascaded structure to fill on the microstrip line，The negative pole of switch PIN diode D30 and switch PIN diode D24、D26、The positive pole of D28 is respectively connected with，When biasing circuit Bias3 is by inductance L6、When electric capacity C14 inputs-5V voltage，Switch PIN diode D24、D26、D28 is reverse-biased，Switch PIN diode D30 positively biased，Branch road IN3 is strobed，Such that it is able to making signal low-loss by branch road IN3，Now branch road IN1、IN2、IN4 biasing circuit input+5V voltage，Switch PIN diode D5～D7 and switch PIN diode D23、D25、D27 and switch PIN diode D39～D41 positively biased，Switch PIN diode D8、D29、D42 is reverse-biased，It is in high isolation state；nullWhen destination channel is IN4 branch road，Switch PIN diode D39、D40、D41 adopts parallel-connection structure，Negative pole is ground connection respectively，Positive pole is connected with microstrip line，Switch PIN diode D42 adopts cascaded structure to fill on the microstrip line，The negative pole of switch PIN diode D42 and switch PIN diode D39、D40、The positive pole of D41 is respectively connected with，When biasing circuit Bias4 is by inductance L12、When electric capacity C18 inputs-5V voltage，Switch PIN diode D39、D40、D41 is reverse-biased，Switch PIN diode D42 positively biased，Branch road IN4 is strobed，Such that it is able to making signal low-loss by branch road IN4，Now branch road IN1～IN3 biasing circuit input+5V voltage，Switch PIN diode D5～D7 and switch PIN diode D23～D28 positively biased，Switch PIN diode D8、D29、D30 is reverse-biased，It is in high isolation state.When switch selection circuit uses in the frequency range of 30MHz～3000MHz, there is the channel separation of up to 80dB and good impedance matching effect.Additionally, the switch PIN diode quantity of switch selection circuit IN1～IN4 every branch road is also designed to 3,5 or 6.
As it is shown on figure 3, the gain control circuit of a kind of multichannel input microwave gain control module, the signal of destination channel enters gain control circuit after being selected by switch selection circuit.Diode D9 and diode D14 adopts cascaded structure to fill on the microstrip line, wherein the positive pole of diode D9 is connected with inductance L7, the positive pole of diode D14 is connected with inductance L11, diode D10～D13 adopts parallel-connection structure, negative pole is ground connection respectively, and positive pole is connected with microstrip line, and low-noise amplifier N1 is carried out impedance matching filled on the microstrip line by electric capacity C2, electric capacity C3, electric capacity C12, inductance L4, there is provided power supply by biasing circuit Bias7, constitute LNA branch road 301；Diode D31 and diode D33 adopts cascaded structure to fill on the microstrip line, wherein the positive pole of diode D31 is connected with inductance L7, the positive pole of diode D33 is connected with inductance L11, diode D32 and diode D34 adopts parallel-connection structure, negative pole is ground connection respectively, positive pole is connected with microstrip line, provides power supply by biasing circuit Bias8, constitutes straight-through branch road 302；Diode D43 and diode D48 adopts cascaded structure to fill on the microstrip line, wherein the positive pole of diode D43 is connected with inductance L7, the positive pole of diode D48 is connected with inductance L11, diode D44～D47 adopts parallel-connection structure, and negative pole is ground connection respectively, and positive pole is connected with microstrip line, resistance R5, resistance R6, resistance R7 constitute π type attenuation network, resistance R8, resistance R9, resistance R10 constitute π type attenuation network, by the cascade of two π type attenuation networks, constitute 30dB decay branch road 303.As the amplitude of target approach channel signal being amplified, then control biasing circuit Bias5 and biasing circuit Bias6 and be simultaneously entered-5V, now diode D9 and diode D14 positively biased, diode D10～D13 is reverse-biased, signal enters LNA branch road 301, by biasing circuit Bias7 input+5V, provide power supply for low-noise amplifier N1 so that low-noise amplifier N1 possesses the signal gain of 16dB；As need to be the amplitude of target approach channel signal led directly to, then controlling biasing circuit Bias8 input-5V, now diode D31 and diode D33 positively biased, diode D32 and diode D34 are reverse-biased, and signal enters straight-through branch road 302 and exports；As target approach channel signal carried out amplitude fading, then control biasing circuit Bias9 and biasing circuit Bias10 and be simultaneously entered-5V, now diode D43 and diode D48 positively biased, diode D44～D47 is reverse-biased, signal enters decay branch road 303, output after 30dB decays.
nullAs shown in Figure 4，A kind of module control circuit of multichannel input microwave gain control module，Module control circuit includes control level B1～B4、Diode D49～D52、TTL/COMS compatible decoder N2～N3、Reverse proportion operational amplifier N4～N5，The positive pole of diode D49～D52 is ground connection respectively，Negative pole is connected with microstrip line，Control level B1 connects with resistance R2，Control level B2 connects with resistance R1，Control level B3 connects with resistance R4，Control level B4 connects with resistance R3，The pin A02 of TTL/COMS compatible decoder N2 is connected with resistance R2，Pin A12 is connected with resistance R1，Pin A22、Pin E12 and pin E22 ground connection，Pin E32 and pin VCC2 connects+5V power supply，Pin Y02 meets the pin H34 of reverse proportion operational amplifier N4，Pin Y12 meets the pin H44 of reverse proportion operational amplifier N4，Pin Y22 meets the pin H24 of reverse proportion operational amplifier N4，Pin Y32 meets the pin H14 of reverse proportion operational amplifier N4；The pin A03 of TTL/COMS compatible decoder N3 is connected with resistance R4, pin A13 is connected with resistance R3, pin A23, pin E13 and pin E23 ground connection, pin E33 and pin VCC3 connects+5V power supply, pin Y03 meets the pin H15 of reverse proportion operational amplifier N5, pin Y13 meets the pin H35 of reverse proportion operational amplifier N5, pin Y23 and meets the pin H25 of reverse proportion operational amplifier N5；The pin OUT34 connecting resistance R11 of reverse proportion operational amplifier N4, pin OUT44 connecting resistance R12, pin OUT14 connecting resistance R13, pin OUT24 connecting resistance R14；The pin OUT35 connecting resistance R15 of reverse proportion operational amplifier N5, pin OUT15 connecting resistance R16, pin OUT25 connecting resistance R17.After resistance R1 buffer protection, the pin A12 of TTL/COMS compatible decoder N2 is inputted when control level B1 inputs the pin A02, control level B2 of TTL/COMS compatible decoder N2 after resistance R2 buffer protection；Reverse proportion operational amplifier N4 exports through current-limiting resistance R5～R8 after being amplified by the TTL/COMS compatible decoder N2 current signal exported: during as control level B1 and control level B2 input low level signal, process rear port Y02 through TTL/COMS compatible decoder N2 and export the high level signal reverse proportion operational amplifier N4 middle port H34 of entrance, from port OUT34 output-5V after reverse proportion operational amplifier N4 processes；By regulating the resistance of resistance R11, for the different electric current of biasing circuit Bias1 output；When control level B1 input high level, control level B2 input low level signal, process rear port Y12 through TTL/COMS compatible decoder N2 and export the high level signal reverse proportion operational amplifier N4 middle port H44 of entrance, from port OUT44 output-5V after reverse proportion operational amplifier N4 processes, by regulating the resistance of resistance R12, for the different electric current of biasing circuit Bias2 output, now biasing circuit Bias1, Bias4, Bias3 output+5V；When control level B1 input low level, control level B2 input high level signal, process rear port Y22 through TTL/COMS compatible decoder N2 and export the high level signal reverse proportion operational amplifier N4 middle port H24 of entrance, from port OUT24 output-5V after reverse proportion operational amplifier N4 processes, by regulating the resistance of resistance R14, for the different electric current of biasing circuit Bias3 output, now biasing circuit Bias1, Bias2, Bias4 output+5V；When control level B1 and control level B2 is simultaneously entered high level signal, process rear port Y32 through TTL/COMS compatible decoder N2 and export the high level signal reverse proportion operational amplifier N4 middle port H14 of entrance, from port OUT14 output-5V after reverse proportion operational amplifier N4 processes, by regulating the resistance of resistance R13, for the different electric current of biasing circuit Bias4 output, now biasing circuit Bias1, Bias2, Bias3 output+5V.In like manner, control level B3 inputs the pin A03, control level B4 of TTL/COMS compatible decoder N3 after resistance R4 buffer protection and inputs the pin A13 of TTL/COMS compatible decoder N3 after resistance R3 buffer protection；Reverse proportion operational amplifier N5 exports through current-limiting resistance R5～R8 after being amplified by the TTL/COMS compatible decoder N3 current signal exported: during as control level B3 and control level B4 input low level signal, process rear port Y03 through TTL/COMS compatible decoder N3 and export the high level signal reverse proportion operational amplifier N5 middle port H15 of entrance, from port OUT15 output-5V after reverse proportion operational amplifier N5 processes；By regulating the resistance of resistance R15, export different electric currents, now biasing circuit Bias5/Bias6, Bias7, Bias8 output+5V for biasing circuit Bias9 and biasing circuit Bias10；When control level B3 input high level, during control level B4 input low level signal, process rear port Y13 through TTL/COMS compatible decoder N3 and export the high level signal reverse proportion operational amplifier N5 middle port H35 of entrance, from port OUT35 output-5V after reverse proportion operational amplifier N5 processes；By regulating the resistance of resistance R15, export different electric currents, now biasing circuit Bias9/Bias10, Bias7, Bias8 output+5V for biasing circuit Bias5 and biasing circuit Bias6；When control level B3 input low level, during control level B4 input high level signal, process rear port Y23 through TTL/COMS compatible decoder N3 and export the high level signal reverse proportion operational amplifier N5 middle port H25 of entrance, from port OUT25 output-5V after reverse proportion operational amplifier N5 processes；By regulating the resistance of resistance R17, for the different electric current of biasing circuit Bias8 output, now biasing circuit Bias5/Bias6, Bias9/Bias10, Bias7 output+5V；By the control of control level B1 and control level B2, control level B3 and control level B4, provide the control function of 4 × 3=12 kind state altogether for module, specifically as shown in table 1:
Table 1 controls function
Therefore, the electric current of different conditions is exported by controlling TTL/COMS compatible decoder N2 and TTL/COMS compatible decoder N3, the generating positive and negative voltage of different electric currents can be provided for biasing circuit, it is achieved the normal operation of switch selection circuit and gain control circuit after reverse proportion operational amplifier N4 and reverse proportion operational amplifier N5 amplifies.
The present invention is not limited to above example, every other embodiments drawn by those skilled in the art according to technical scheme, also falls within protection scope of the present invention.
Claims (8)
1. a multichannel input microwave gain control module, it is characterised in that including:
Input high-power signal is carried out the limiter protection circuit of amplitude restriction; the IN1 branch road of described limiter protection circuit includes 4 amplitude limits PIN diode D1, D2, D3, D4; described amplitude limit PIN diode D1, D2, D3, D4 adopt parallel form to fill on the microstrip line; wherein the positive pole of amplitude limit PIN diode D1, D2, D3 connects microstrip line; negative pole is ground connection respectively; the negative pole of amplitude limit PIN diode D4 connects microstrip line, plus earth；The IN2 branch road of described limiter protection circuit includes 4 amplitude limits PIN diode D15, D17, D19, D21; described amplitude limit PIN diode D15, D17, D19, D21 adopt parallel form to fill on the microstrip line; wherein the positive pole of amplitude limit PIN diode D15, D17, D19 connects microstrip line; negative pole is ground connection respectively; the negative pole of amplitude limit PIN diode D21 connects microstrip line, plus earth；The IN3 branch road of described limiter protection circuit includes 4 amplitude limits PIN diode D16, D18, D20, D22; described amplitude limit PIN diode D16, D18, D20, D22 adopt parallel form to fill on the microstrip line; wherein the positive pole of amplitude limit PIN diode D16, D18, D20 connects microstrip line; negative pole is ground connection respectively; the negative pole of amplitude limit PIN diode D22 connects microstrip line, plus earth；The IN4 branch road of described limiter protection circuit includes 4 amplitude limits PIN diode D35, D36, D37, D38; described amplitude limit PIN diode D35, D36, D37, D38 adopt parallel form to fill on the microstrip line; wherein the positive pole of amplitude limit PIN diode D35, D36, D37 connects microstrip line; negative pole is ground connection respectively; the negative pole of amplitude limit PIN diode D38 connects microstrip line, plus earth；
Destination channel is carried out the switch selection circuit of signal behavior, the IN1 branch road of described switch selection circuit includes 4 switch PIN diode D5, D6, D7, D8, described switch PIN diode D5, D6, D7 adopt parallel-connection structure, negative pole is ground connection respectively, positive pole is connected with microstrip line, described switch PIN diode D8 adopts cascaded structure to fill on the microstrip line, and the positive pole of the negative pole of described switch PIN diode D8 and described switch PIN diode D5, D6, D7 is respectively connected with；The IN2 branch road of described switch selection circuit includes 4 switch PIN diode D23, D25, D27, D29, described switch PIN diode D23, D25, D27 adopt parallel-connection structure, negative pole is ground connection respectively, positive pole is connected with microstrip line, described switch PIN diode D29 adopts cascaded structure to fill on the microstrip line, and the positive pole of the negative pole of described switch PIN diode D29 and described switch PIN diode D23, D25, D27 is respectively connected with；The IN3 branch road of described switch selection circuit includes 4 switch PIN diode D24, D26, D28, D30, described switch PIN diode D24, D26, D28 adopt parallel-connection structure, negative pole is ground connection respectively, positive pole is connected with microstrip line, described switch PIN diode D30 adopts cascaded structure to fill on the microstrip line, and the positive pole of the negative pole of described switch PIN diode D30 and described switch PIN diode D24, D26, D28 is respectively connected with；The IN4 branch road of described switch selection circuit includes 4 switch PIN diode D39, D40, D41, D42, described switch PIN diode D39, D40, D41 adopt parallel-connection structure, negative pole is ground connection respectively, positive pole is connected with microstrip line, described switch PIN diode D42 adopts cascaded structure to fill on the microstrip line, and the positive pole of the negative pole of described switch PIN diode D42 and described switch PIN diode D39, D40, D41 is respectively connected with；
To entering the gain control circuit that module by signal is amplified, leads directly to or decay；
The module control circuit that switch selection circuit and gain control circuit are controlled.
2. a kind of multichannel input microwave gain control module as claimed in claim 1, it is characterised in that: the signal amplitude≤+ 10dBm of output after described limiter protection circuit amplitude limit.
3. a kind of multichannel input microwave gain control module as claimed in claim 1, it is characterised in that: the amplitude limit PIN diode quantity of described limiter protection circuit IN1～IN4 every branch road is 3,5 or 6.
4. a kind of multichannel input microwave gain control module as claimed in claim 1, it is characterised in that: the switch PIN diode quantity of described switch selection circuit IN1～IN4 every branch road is 3,5 or 6.
5. a kind of multichannel input microwave gain control module as claimed in claim 1, it is characterised in that: the use frequency of described switch selection circuit is 30MHz～3000MHz.
6. a kind of multichannel input microwave gain control module as claimed in claim 1, it is characterized in that: described gain control circuit includes LNA branch road 301, straight-through branch road 302, decay branch road 303, the diode D9 and diode D14 of described LNA branch road 301 adopts cascaded structure to fill on the microstrip line, wherein the positive pole of diode D9 is connected with inductance L7, the positive pole of diode D14 is connected with inductance L11, diode D10～D13 adopts parallel-connection structure, negative pole is ground connection respectively, positive pole is connected with microstrip line, low-noise amplifier N1 passes through electric capacity C2, electric capacity C3, electric capacity C12, inductance L4 carries out impedance matching and fills on the microstrip line, power supply is provided by biasing circuit Bias7；The diode D31 and diode D33 of described straight-through branch road adopts cascaded structure to fill on the microstrip line, wherein the positive pole of diode D31 is connected with inductance L7, the positive pole of diode D33 is connected with inductance L11, diode D32 and diode D34 adopts parallel-connection structure, negative pole is ground connection respectively, positive pole is connected with microstrip line, provides power supply by biasing circuit Bias8；The diode D43 and diode D48 of described decay branch road 303 adopts cascaded structure to fill on the microstrip line, wherein the positive pole of diode D43 is connected with inductance L7, the positive pole of diode D48 is connected with inductance L11, diode D44～D47 adopts parallel-connection structure, negative pole is ground connection respectively, positive pole is connected with microstrip line, resistance R5, resistance R6, resistance R7 constitute π type attenuation network, resistance R8, resistance R9, resistance R10 constitute π type attenuation network, by the cascade of two π type attenuation networks, constitute 30dB decay branch road 303.
null7. a kind of multichannel input microwave gain control module as claimed in claim 1，It is characterized in that: described module control circuit includes control level B1～B4、Diode D49～D52、TTL/COMS compatible decoder N2～N3、Reverse proportion operational amplifier N4～N5，The positive pole of described diode D49～D52 is ground connection respectively，Negative pole is connected with microstrip line，Described control level B1 connects with resistance R2，Described control level B2 connects with resistance R1，Described control level B3 connects with resistance R4，Described control level B4 connects with resistance R3，The pin A02 of described TTL/COMS compatible decoder N2 is connected with resistance R2，Pin A12 is connected with resistance R1，Pin A22、Pin E12 and pin E22 ground connection，Pin E32 and pin VCC2 connects+5V power supply，Pin Y02 meets the pin H34 of reverse proportion operational amplifier N4，Pin Y12 meets the pin H44 of reverse proportion operational amplifier N4，Pin Y22 meets the pin H24 of reverse proportion operational amplifier N4，Pin Y32 meets the pin H14 of reverse proportion operational amplifier N4；The pin A03 of described TTL/COMS compatible decoder N3 is connected with resistance R4, pin A13 is connected with resistance R3, pin A23, pin E13 and pin E23 ground connection, pin E33 and pin VCC3 connects+5V power supply, pin Y03 meets the pin H15 of reverse proportion operational amplifier N5, pin Y13 meets the pin H35 of reverse proportion operational amplifier N5, pin Y23 and meets the pin H25 of reverse proportion operational amplifier N5；The pin OUT34 connecting resistance R11 of described reverse proportion operational amplifier N4, pin OUT44 connecting resistance R12, pin OUT14 connecting resistance R13, pin OUT24 connecting resistance R14；The pin OUT35 connecting resistance R15 of described reverse proportion operational amplifier N5, pin OUT15 connecting resistance R16, pin OUT25 connecting resistance R17.
8. a kind of multichannel input microwave gain control module as described in claim 1 or 7, it is characterised in that: described module control circuit has 12 kinds of states and controls function, table specific as follows:
。
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| CN106874988B (en) * | 2015-12-11 | 2019-12-03 | 中芯国际集成电路制造(上海)有限公司 | Amplitude limiter circuit and RFID tag in radio frequency identification |
| CN109547138B (en) * | 2017-09-22 | 2022-11-29 | 刘伟 | Amplitude control circuit and multichannel amplitude control matrix |
| CN110098844B (en) * | 2019-05-14 | 2024-04-16 | 广东宽普科技股份有限公司 | C-band two-way signal receiving device |
| CN110289882A (en) * | 2019-07-29 | 2019-09-27 | 广东宽普科技股份有限公司 | A kind of radiofrequency signal either simplex transmission circuit |
| CN111030640B (en) * | 2019-12-27 | 2021-05-28 | 苏州市新诚氏通讯电子股份有限公司 | Surface-mounted miniature superposed circuit attenuation sheet and preparation method thereof |
| CN116470870A (en) * | 2023-04-19 | 2023-07-21 | 广州市迪士普音响科技有限公司 | Method, device and system for adjusting multichannel gain |
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| US7664201B2 (en) * | 2000-03-27 | 2010-02-16 | Interdigital Technology Corporation | Digital automatic gain control |
| CN202586944U (en) * | 2012-03-21 | 2012-12-05 | 成都中安频谱科技有限公司 | Short wave preselector |
| CN203434945U (en) * | 2013-09-16 | 2014-02-12 | 浙江嘉科电子有限公司 | Multi-channel input microwave gain control module |
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| US7664201B2 (en) * | 2000-03-27 | 2010-02-16 | Interdigital Technology Corporation | Digital automatic gain control |
| CN202586944U (en) * | 2012-03-21 | 2012-12-05 | 成都中安频谱科技有限公司 | Short wave preselector |
| CN203434945U (en) * | 2013-09-16 | 2014-02-12 | 浙江嘉科电子有限公司 | Multi-channel input microwave gain control module |
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