CN103457561A - Multichannel input microwave gain control module - Google Patents
Multichannel input microwave gain control module Download PDFInfo
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- CN103457561A CN103457561A CN2013104209717A CN201310420971A CN103457561A CN 103457561 A CN103457561 A CN 103457561A CN 2013104209717 A CN2013104209717 A CN 2013104209717A CN 201310420971 A CN201310420971 A CN 201310420971A CN 103457561 A CN103457561 A CN 103457561A
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Abstract
The invention relates to a multichannel input microwave gain control module which is characterized by comprising an amplitude limiting protection circuit used for limiting the amplitude of an input high-power signal, a switch selection circuit used for conducting signal selection on a target channel, a gain control circuit used for conducting amplification, direct connection or attenuation on input module signals and a module control circuit used for controlling the switch selection circuit and the gain control circuit. The multichannel input microwave gain control module overcomes the shortages that a traditional microwave gain control module is single in function, large in size, poor in stability and low in index, satisfies the requirements for high performance, high reliability and miniaturized size of a modern wireless communication system module and has the advantages of being low in machining difficulty, low in cost, low in weight and capable of achieving multiple integrated functions. According to the multichannel input microwave gain control module, microwave receiving modules on different scales and with different functions can be composed through the method that different branches and switch branches in different states are flexibly selected so that the application requirements of various receiving systems can be satisfied.
Description
Technical field
The present invention relates to the Controller Circuit Used in Microwave Power Amplifier technical field, relate in particular to a kind of multichannel input microwave gain control module.
Background technology
Gain control module is module commonly used in wireless receiving system, plays a part to carry out to received signal amplitude adjusted; Along with the fast development of modern wireless telecommunication system and electronic equipment, research broadband, large dynamic and gain control circuit flexible control mode become one of key of Circuits System.
Traditional microwave gain control module is spliced by cable by a plurality of modules such as single switch, amplifier, attenuators usually, has that function singleness, volume are large, a poor stability, shortcoming that index is low; Along with the requirement of modern wireless telecommunication system is more and more higher, the requirement of microwave gain control module is constantly promoted, along with the improving constantly of wireless telecommunication system frequency, the microwave gain control module of traditional approach can not meet the system index requirement simultaneously.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, a kind of multichannel input microwave gain control module is provided, met the requirement of modern wireless telecommunication system module high-performance, high reliability, volume miniaturization, have advantages of that difficulty of processing is little, cost is low, lightweight and integrated functionality is many, can also the microwave receiving module of multiple scale and function can be formed by the switching branches of flexible selection different branch and different conditions, the application requirements of multiple receiving system can be met.
The main technical schemes that the present invention adopts is: a kind of multichannel input microwave gain control module, it is characterized in that, and comprising:
The input high-power signal is carried out to the limiter protection circuit of amplitude limitation;
Destination channel is carried out to the switch of signal selection and select circuit;
The gain control circuit that is amplified entering module by signal, leads directly to or decay;
The module control circuit of selecting circuit and gain control circuit to be controlled to switch.
The present invention also adopts following attached technical scheme:
The IN1 branch road of limiter protection circuit comprises 4 amplitude limit PIN diode D1, D2, D3, D4, described amplitude limit PIN diode D1, D2, D3, D4 adopt parallel form to be contained on microstrip line, wherein the positive pole of amplitude limit PIN diode D1, D2, D3 connects microstrip line, negative pole is ground connection respectively, the negative pole of amplitude limit PIN diode D4 connects microstrip line, plus earth; The IN2 branch road of described limiter protection circuit comprises 4 amplitude limit PIN diode D15, D17, D19, D21, described amplitude limit PIN diode D15, D17, D19, D21 adopt parallel form to be contained on microstrip line, wherein the positive pole of amplitude limit PIN diode D15, D17, D19 connects microstrip line, negative pole is ground connection respectively, the negative pole of amplitude limit PIN diode D21 connects microstrip line, plus earth; The IN3 branch road of described limiter protection circuit comprises 4 amplitude limit PIN diode D16, D18, D20, D22, described amplitude limit PIN diode D16, D18, D20, D22 adopt parallel form to be contained on microstrip line, wherein the positive pole of amplitude limit PIN diode D16, D18, D20 connects microstrip line, negative pole is ground connection respectively, the negative pole of amplitude limit PIN diode D22 connects microstrip line, plus earth; The IN4 branch road of described limiter protection circuit comprises 4 amplitude limit PIN diode D35, D36, D37, D38; described amplitude limit PIN diode D35, D36, D37, D38 adopt parallel form to be contained on microstrip line; wherein the positive pole of amplitude limit PIN diode D35, D36, D37 connects microstrip line; negative pole is ground connection respectively; the negative pole of amplitude limit PIN diode D38 connects microstrip line, plus earth.
The signal amplitude of exporting after the limiter protection circuit amplitude limit≤+ 10dBm.
The amplitude limit PIN diode quantity of every branch road of limiter protection circuit IN1～IN4 can also be 3,5 or 6.
Switch selects the IN1 branch road of circuit to comprise 4 switch P IN diode D5, D6, D7, D8, described switch P IN diode D5, D6, D7 adopt parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, described switch P IN diode D8 adopts cascaded structure to be contained on microstrip line, and the negative pole of described switch P IN diode D8 is connected respectively with the positive pole of described switch P IN diode D5, D6, D7; Described switch selects the IN2 branch road of circuit to comprise 4 switch P IN diode D23, D25, D27, D29, described switch P IN diode D23, D25, D27 adopt parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, described switch P IN diode D29 adopts cascaded structure to be contained on microstrip line, and the negative pole of described switch P IN diode D29 is connected respectively with the positive pole of described switch P IN diode D23, D25, D27; Described switch selects the IN3 branch road of circuit to comprise 4 switch P IN diode D24, D26, D28, D30, described switch P IN diode D24, D26, D28 adopt parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, described switch P IN diode D30 adopts cascaded structure to be contained on microstrip line, and the negative pole of described switch P IN diode D30 is connected respectively with the positive pole of described switch P IN diode D24, D26, D28; Described switch selects the IN4 branch road of circuit to comprise 4 switch P IN diode D39, D40, D41, D42, described switch P IN diode D39, D40, D41 adopt parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, described switch P IN diode D42 adopts cascaded structure to be contained on microstrip line, and the negative pole of described switch P IN diode D42 is connected respectively with the positive pole of described switch P IN diode D39, D40, D41.
Switch selects the switch P IN number of diodes of every branch road of circuit I N1～IN4 to be 3,5 or 6.
It is 30MHz～3000MHz that switch is selected the frequency of utilization of circuit.
Gain control circuit comprises LNA branch road 301, straight-through branch road 302, decay branch road 303, the diode D9 of described LNA branch road 301 and diode D14 adopt cascaded structure to be contained on microstrip line, wherein the positive pole of diode D9 is connected with inductance L 7, the positive pole of diode D14 is connected with inductance L 11, diode D10～D13 adopts parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, low noise amplifier N1 carries out impedance matching by capacitor C 2, capacitor C 3, capacitor C 12, inductance L 4 and is contained on microstrip line, and by biasing circuit, Bias7 provides power supply; The diode D31 of described direct circuit and diode D33 adopt cascaded structure to be contained on microstrip line, wherein the positive pole of diode D31 is connected with inductance L 7, the positive pole of diode D33 is connected with inductance L 11, diode D32 and diode D34 adopt parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, and by biasing circuit, Bias8 provides power supply; The diode D43 of described decay branch road 303 and diode D48 adopt cascaded structure to be contained on microstrip line, wherein the positive pole of diode D43 is connected with inductance L 7, the positive pole of diode D48 is connected with inductance L 11, diode D44～D47 adopts parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, resistance R 5, resistance R 6, resistance R 7 form π type attenuation network, resistance R 8, resistance R 9, resistance R 10 form π type attenuation network, by the cascade of two π type attenuation networks, formed 30dB decay branch road 303.
Module control circuit comprises control level B1～B4, diode D49～D52, TTL/COMS compatible decoder N2～N3, reverse proportion operational amplifier N4～N5, the positive pole of described diode D49～D52 is ground connection respectively, negative pole is connected with microstrip line, described control level B1 connects with resistance R 2, described control level B2 connects with resistance R 1, described control level B3 connects with resistance R 4, described control level B4 connects with resistance R 3, the pin A02 of described TTL/COMS compatible decoder N2 is connected with resistance R 2, pin A12 is connected with resistance R 1, pin A22, pin E12 and pin E22 ground connection, pin E32 and connect+5V of pin VCC2 power supply, pin Y02 meets the pin H34 of reverse proportion operational amplifier N4, pin Y12 meets the pin H44 of reverse proportion operational amplifier N4, pin Y22 meets the pin H24 of reverse proportion operational amplifier N4, pin Y32 meets the pin H14 of reverse proportion operational amplifier N4, the pin A03 of described TTL/COMS compatible decoder N3 is connected with resistance R 4, pin A13 is connected with resistance R 3, pin A23, pin E13 and pin E23 ground connection, pin E33 and connect+5V of pin VCC3 power supply, pin Y03 meets the pin H15 of reverse proportion operational amplifier N5, pin Y13 meets the pin H35 of reverse proportion operational amplifier N5, and pin Y23 meets the pin H25 of reverse proportion operational amplifier N5, the pin OUT34 connecting resistance R11 of described reverse proportion operational amplifier N4, pin OUT44 connecting resistance R12, pin OUT14 connecting resistance R13, pin OUT24 connecting resistance R14, the pin OUT35 connecting resistance R15 of described reverse proportion operational amplifier N5, pin OUT15 connecting resistance R16, pin OUT25 connecting resistance R17.
Module control circuit has 12 kinds of states and controls function, table specific as follows:
The beneficial effect that adopts the present invention to bring is: met the requirement of modern wireless telecommunication system module high-performance, high reliability, volume miniaturization, have advantages of that difficulty of processing is little, cost is low, lightweight and integrated functionality is many, can also the microwave receiving module of multiple scale and function can be formed by the switching branches of flexible selection different branch and different conditions, the application requirements of multiple receiving system can be met.
The accompanying drawing explanation
Below in conjunction with accompanying drawing, be described further:
The structure principle chart that Fig. 1 is a kind of multichannel input of the present invention microwave gain control module.
Fig. 2 is the structure principle chart that limiter protection circuit of the present invention and switch are selected circuit.
The structure principle chart that Fig. 3 is gain control circuit of the present invention.
The structure principle chart that Fig. 4 is module control circuit of the present invention.
Embodiment
As shown in Figure 1, a kind of multichannel input microwave gain control module comprises:
The input high-power signal is carried out to the limiter protection circuit of amplitude limitation;
Destination channel is carried out to the switch of signal selection and select circuit;
The gain control circuit that is amplified entering module by signal, leads directly to or decay;
The module control circuit of selecting circuit and gain control circuit to be controlled to switch.
As shown in dotted line block diagram 201 in Fig. 2, a kind of limiter protection circuit of multichannel input microwave gain control module, 4 amplitude limit PIN diode D1, D2, D3, D4 adopts parallel form to be contained on microstrip line, amplitude limit PIN diode D1 wherein, D2, the positive pole of D3 connects microstrip line, negative pole is ground connection respectively, the negative pole of amplitude limit PIN diode D4 connects microstrip line, plus earth, after high-power signal enters the IN1 branch road, through amplitude limit PIN diode D1, D2, D3, D4 carries out multistage amplitude limit, make the signal amplitude exported after amplitude limit≤+ 10dBm, thereby the protection late-class circuit is not burned, maximum can be born the 5W continuous wave and do not burnt, in like manner, 4 amplitude limit PIN diode D15, D17, D19, D21 adopt parallel form to be contained on microstrip line, wherein the positive pole of amplitude limit PIN diode D15, D17, D19 connects microstrip line, negative pole is ground connection respectively, the negative pole of amplitude limit PIN diode D21 connects microstrip line, plus earth, after high-power signal enters the IN2 branch road, carry out multistage amplitude limit through amplitude limit PIN diode D15, D17, D19, D21, make the signal amplitude exported after amplitude limit≤+ 10dBm, thereby the protection late-class circuit is not burned, and maximum can be born the 5W continuous wave and do not burnt, 4 amplitude limit PIN diode D16, D18, D20, D22 adopt parallel form to be contained on microstrip line, wherein the positive pole of amplitude limit PIN diode D16, D18, D20 connects microstrip line, negative pole is ground connection respectively, the negative pole of amplitude limit PIN diode D22 connects microstrip line, plus earth, after high-power signal enters the IN3 branch road, carry out multistage amplitude limit through amplitude limit PIN diode D16, D18, D20, D22, make the signal amplitude exported after amplitude limit≤+ 10dBm, thereby the protection late-class circuit is not burned, and maximum can be born the 5W continuous wave and do not burnt, 4 amplitude limit PIN diode D35, D36, D37, D38 adopt parallel form to be contained on microstrip line, wherein the positive pole of amplitude limit PIN diode D35, D36, D37 connects microstrip line, negative pole is ground connection respectively, the negative pole of amplitude limit PIN diode D38 connects microstrip line, plus earth, after high-power signal enters the IN4 branch road, carry out multistage amplitude limit through amplitude limit PIN diode D35, D36, D37, D38, make the signal amplitude exported after amplitude limit≤+ 10dBm, thereby the protection late-class circuit is not burned, and maximum can be born the 5W continuous wave and do not burnt.In addition, the amplitude limit PIN diode quantity of every branch road of limiter protection circuit IN1～IN4 can also be designed to 3,5 or 6.
As shown in dotted line block diagram 202 in Fig. 2, a kind of switch of multichannel input microwave gain control module is selected circuit, four select hilted broadsword four throw switch circuit, when destination channel is the IN1 branch road, switch P IN diode D5, D6, D7 adopts parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, switch P IN diode D8 adopts cascaded structure to be contained on microstrip line, the negative pole of switch P IN diode D8 and switch P IN diode D5, D6, the positive pole of D7 is connected respectively, when biasing circuit Bias1 passes through inductance L 1, during capacitor C 9 input-5V voltage, switch P IN diode D5, D6, D7 is anti-inclined to one side, switch P IN diode D8 positively biased, branch road IN1 is strobed, thereby can make signal low-loss ground by branch road IN1, branch road IN2～IN4 biasing circuit input+5V voltage now, switch P IN diode D23～D28 and switch P IN diode D39～D41 positively biased, switch P IN diode D29, D30, D42 is anti-inclined to one side, in high isolation, when destination channel is the IN2 branch road, switch P IN diode D23, D25, D27 adopts parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, switch P IN diode D29 adopts cascaded structure to be contained on microstrip line, the negative pole of switch P IN diode D29 and switch P IN diode D23, D25, the positive pole of D27 is connected respectively, when biasing circuit Bias2 passes through inductance L 2, during capacitor C 10 input-5V voltage, switch P IN diode D23, D25, D27 is anti-inclined to one side, switch P IN diode D29 positively biased, branch road IN2 is strobed, thereby can make signal low-loss ground by branch road IN2, branch road IN1 now, IN3, IN4 biasing circuit input+5V voltage, switch P IN diode D5～D7 and switch P IN diode D24, D26, D28 and switch P IN diode D39～D41 positively biased, switch P IN diode D8, D30, D42 is anti-inclined to one side, in high isolation, when destination channel is the IN3 branch road, switch P IN diode D24, D26, D28 adopts parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, switch P IN diode D30 adopts cascaded structure to be contained on microstrip line, the negative pole of switch P IN diode D30 and switch P IN diode D24, D26, the positive pole of D28 is connected respectively, when biasing circuit Bias3 passes through inductance L 6, during capacitor C 14 input-5V voltage, switch P IN diode D24, D26, D28 is anti-inclined to one side, switch P IN diode D30 positively biased, branch road IN3 is strobed, thereby can make signal low-loss ground by branch road IN3, branch road IN1 now, IN2, IN4 biasing circuit input+5V voltage, switch P IN diode D5～D7 and switch P IN diode D23, D25, D27 and switch P IN diode D39～D41 positively biased, switch P IN diode D8, D29, D42 is anti-inclined to one side, in high isolation, when destination channel is the IN4 branch road, switch P IN diode D39, D40, D41 adopts parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, switch P IN diode D42 adopts cascaded structure to be contained on microstrip line, the negative pole of switch P IN diode D42 and switch P IN diode D39, D40, the positive pole of D41 is connected respectively, when biasing circuit Bias4 passes through inductance L 12, during capacitor C 18 input-5V voltage, switch P IN diode D39, D40, D41 is anti-inclined to one side, switch P IN diode D42 positively biased, branch road IN4 is strobed, thereby can make signal low-loss ground by branch road IN4, branch road IN1～IN3 biasing circuit input+5V voltage now, switch P IN diode D5～D7 and switch P IN diode D23～D28 positively biased, switch P IN diode D8, D29, D30 is anti-inclined to one side, in high isolation.While using in switch is selected the frequency range of circuit at 30MHz～3000MHz, have up to the channel separation of 80dB and good impedance matching effect.In addition, switch selects the switch P IN number of diodes of every branch road of circuit I N1～IN4 can also be designed to 3,5 or 6.
As shown in Figure 3, a kind of gain control circuit of multichannel input microwave gain control module, the signal of destination channel enters gain control circuit after selecting circuit to select by switch.Diode D9 and diode D14 adopt cascaded structure to be contained on microstrip line, wherein the positive pole of diode D9 is connected with inductance L 7, the positive pole of diode D14 is connected with inductance L 11, diode D10～D13 adopts parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, low noise amplifier N1 carries out impedance matching by capacitor C 2, capacitor C 3, capacitor C 12, inductance L 4 and is contained on microstrip line, and by biasing circuit, Bias7 provides power supply, has formed LNA branch road 301; Diode D31 and diode D33 adopt cascaded structure to be contained on microstrip line, wherein the positive pole of diode D31 is connected with inductance L 7, the positive pole of diode D33 is connected with inductance L 11, diode D32 and diode D34 adopt parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, by biasing circuit, Bias8 provides power supply, forms straight-through branch road 302; Diode D43 and diode D48 adopt cascaded structure to be contained on microstrip line, wherein the positive pole of diode D43 is connected with inductance L 7, the positive pole of diode D48 is connected with inductance L 11, diode D44～D47 adopts parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, and resistance R 5, resistance R 6, resistance R 7 form π type attenuation networks, and resistance R 8, resistance R 9, resistance R 10 form π type attenuation networks, by the cascade of two π type attenuation networks, formed 30dB decay branch road 303.As amplified the amplitude of target approach channel signal, control biasing circuit Bias5 and simultaneously input-5V of biasing circuit Bias6, now diode D9 and diode D14 positively biased, diode D10～D13 is anti-inclined to one side, signal enters LNA branch road 301, by biasing circuit Bias7 input+5V, for low noise amplifier, N1 provides power supply, makes low noise amplifier N1 possess the signal gain of 16dB; As need be the amplitude of target approach channel signal led directly to, control biasing circuit Bias8 input-5V, now diode D31 and diode D33 positively biased, diode D32 and diode D34 are anti-inclined to one side, and signal enters straight-through branch road 302 outputs; As carried out amplitude fading to the target approach channel signal, control biasing circuit Bias9 and simultaneously input-5V of biasing circuit Bias10, now diode D43 and diode D48 positively biased, diode D44～D47 is anti-inclined to one side, signal enters decay branch road 303, output after the 30dB decay.
As shown in Figure 4, a kind of module control circuit of multichannel input microwave gain control module, module control circuit comprises control level B1～B4, diode D49～D52, TTL/COMS compatible decoder N2～N3, reverse proportion operational amplifier N4～N5, the positive pole of diode D49～D52 is ground connection respectively, negative pole is connected with microstrip line, control level B1 connects with resistance R 2, control level B2 connects with resistance R 1, control level B3 connects with resistance R 4, control level B4 connects with resistance R 3, the pin A02 of TTL/COMS compatible decoder N2 is connected with resistance R 2, pin A12 is connected with resistance R 1, pin A22, pin E12 and pin E22 ground connection, pin E32 and connect+5V of pin VCC2 power supply, pin Y02 meets the pin H34 of reverse proportion operational amplifier N4, pin Y12 meets the pin H44 of reverse proportion operational amplifier N4, pin Y22 meets the pin H24 of reverse proportion operational amplifier N4, pin Y32 meets the pin H14 of reverse proportion operational amplifier N4, the pin A03 of TTL/COMS compatible decoder N3 is connected with resistance R 4, pin A13 is connected with resistance R 3, pin A23, pin E13 and pin E23 ground connection, pin E33 and connect+5V of pin VCC3 power supply, pin Y03 meets the pin H15 of reverse proportion operational amplifier N5, pin Y13 meets the pin H35 of reverse proportion operational amplifier N5, and pin Y23 meets the pin H25 of reverse proportion operational amplifier N5, the pin OUT34 connecting resistance R11 of reverse proportion operational amplifier N4, pin OUT44 connecting resistance R12, pin OUT14 connecting resistance R13, pin OUT24 connecting resistance R14, the pin OUT35 connecting resistance R15 of reverse proportion operational amplifier N5, pin OUT15 connecting resistance R16, pin OUT25 connecting resistance R17.Input the pin A02 of TTL/COMS compatible decoder N2 after resistance R 2 buffer protections as control level B1, control level B2 inputs the pin A12 of TTL/COMS compatible decoder N2 after resistance R 1 buffer protection; Oppositely proportion operational amplifier N4 amplifies the current signal of TTL/COMS compatible decoder N2 output by current-limiting resistance R5～R8 output: when control level B1 and control level B2 input low level signal, process rear port Y02 output high level signal through TTL/COMS compatible decoder N2 and enter reverse proportion operational amplifier N4 middle port H34, after reverse proportion operational amplifier N4 processing from port OUT34 output-5V; By the resistance of regulating resistance R11, for biasing circuit Bias1 exports different electric currents; When control level B1 input high level, control level B2 input low level signal, process rear port Y12 output high level signal through TTL/COMS compatible decoder N2 and enter reverse proportion operational amplifier N4 middle port H44, after reverse proportion operational amplifier N4 processes from port OUT44 output-5V, resistance by regulating resistance R12, for biasing circuit Bias2 exports different electric currents, now biasing circuit Bias1, Bias4, Bias3 output+5V; When control level B1 input low level, control level B2 input high level signal, process rear port Y22 output high level signal through TTL/COMS compatible decoder N2 and enter reverse proportion operational amplifier N4 middle port H24, after reverse proportion operational amplifier N4 processes from port OUT24 output-5V, resistance by regulating resistance R14, for biasing circuit Bias3 exports different electric currents, now biasing circuit Bias1, Bias2, Bias4 output+5V; When control level B1 and control level B2 while input high level signal, process rear port Y32 output high level signal through TTL/COMS compatible decoder N2 and enter reverse proportion operational amplifier N4 middle port H14, after reverse proportion operational amplifier N4 processes from port OUT14 output-5V, resistance by regulating resistance R13, for biasing circuit Bias4 exports different electric currents, now biasing circuit Bias1, Bias2, Bias3 output+5V.In like manner, control level B3 inputs the pin A03 of TTL/COMS compatible decoder N3 after resistance R 4 buffer protections, and control level B4 inputs the pin A13 of TTL/COMS compatible decoder N3 after resistance R 3 buffer protections; Oppositely proportion operational amplifier N5 amplifies the current signal of TTL/COMS compatible decoder N3 output by current-limiting resistance R5～R8 output: when control level B3 and control level B4 input low level signal, process rear port Y03 output high level signal through TTL/COMS compatible decoder N3 and enter reverse proportion operational amplifier N5 middle port H15, after reverse proportion operational amplifier N5 processing from port OUT15 output-5V; By the resistance of regulating resistance R15, for biasing circuit Bias9 and biasing circuit Bias10 export different electric currents, now biasing circuit Bias5/Bias6, Bias7, Bias8 output+5V; When control level B3 input high level, during control level B4 input low level signal, process rear port Y13 output high level signal through TTL/COMS compatible decoder N3 and enter reverse proportion operational amplifier N5 middle port H35, after reverse proportion operational amplifier N5 processing from port OUT35 output-5V; By the resistance of regulating resistance R15, for biasing circuit Bias5 and biasing circuit Bias6 export different electric currents, now biasing circuit Bias9/Bias10, Bias7, Bias8 output+5V; When control level B3 input low level, during control level B4 input high level signal, process rear port Y23 output high level signal through TTL/COMS compatible decoder N3 and enter reverse proportion operational amplifier N5 middle port H25, after reverse proportion operational amplifier N5 processing from port OUT25 output-5V; By the resistance of regulating resistance R17, for biasing circuit Bias8 exports different electric currents, now biasing circuit Bias5/Bias6, Bias9/Bias10, Bias7 output+5V; By the control of control level B1 and control level B2, control level B3 and control level B4, the control function of 4 * 3=12 kind state is provided for module altogether, specifically as shown in table 1:
Table 1 is controlled function
Therefore, by controlling the electric current of TTL/COMS compatible decoder N2 and TTL/COMS compatible decoder N3 output different conditions, can be the generating positive and negative voltage that biasing circuit provides different electric currents after reverse proportion operational amplifier N4 and reverse proportion operational amplifier N5 amplification, realize the normal operation of switch selection circuit and gain control circuit.
The present invention is not limited to above embodiment, and every other execution modes that drawn by those skilled in the art's technical scheme according to the present invention, within dropping on protection scope of the present invention equally.
Claims (10)
1. a multichannel input microwave gain control module, is characterized in that, comprising:
The input high-power signal is carried out to the limiter protection circuit of amplitude limitation;
Destination channel is carried out to the switch of signal selection and select circuit;
The gain control circuit that is amplified entering module by signal, leads directly to or decay;
The module control circuit of selecting circuit and gain control circuit to be controlled to switch.
2. a kind of multichannel as claimed in claim 1 is inputted the microwave gain control module, it is characterized in that: the IN1 branch road of described limiter protection circuit comprises 4 amplitude limit PIN diode D1, D2, D3, D4, described amplitude limit PIN diode D1, D2, D3, D4 adopt parallel form to be contained on microstrip line, wherein the positive pole of amplitude limit PIN diode D1, D2, D3 connects microstrip line, negative pole is ground connection respectively, the negative pole of amplitude limit PIN diode D4 connects microstrip line, plus earth; The IN2 branch road of described limiter protection circuit comprises 4 amplitude limit PIN diode D15, D17, D19, D21, described amplitude limit PIN diode D15, D17, D19, D21 adopt parallel form to be contained on microstrip line, wherein the positive pole of amplitude limit PIN diode D15, D17, D19 connects microstrip line, negative pole is ground connection respectively, the negative pole of amplitude limit PIN diode D21 connects microstrip line, plus earth; The IN3 branch road of described limiter protection circuit comprises 4 amplitude limit PIN diode D16, D18, D20, D22, described amplitude limit PIN diode D16, D18, D20, D22 adopt parallel form to be contained on microstrip line, wherein the positive pole of amplitude limit PIN diode D16, D18, D20 connects microstrip line, negative pole is ground connection respectively, the negative pole of amplitude limit PIN diode D22 connects microstrip line, plus earth; The IN4 branch road of described limiter protection circuit comprises 4 amplitude limit PIN diode D35, D36, D37, D38; described amplitude limit PIN diode D35, D36, D37, D38 adopt parallel form to be contained on microstrip line; wherein the positive pole of amplitude limit PIN diode D35, D36, D37 connects microstrip line; negative pole is ground connection respectively; the negative pole of amplitude limit PIN diode D38 connects microstrip line, plus earth.
3. a kind of multichannel as claimed in claim 2 is inputted the microwave gain control module, it is characterized in that: the signal amplitude of exporting after described limiter protection circuit amplitude limit≤+ 10dBm.
4. a kind of multichannel as claimed in claim 2 is inputted the microwave gain control module, and it is characterized in that: the amplitude limit PIN diode quantity of every branch road of described limiter protection circuit IN1～IN4 can also be 3,5 or 6.
5. a kind of multichannel as claimed in claim 1 is inputted the microwave gain control module, it is characterized in that: described switch selects the IN1 branch road of circuit to comprise 4 switch P IN diode D5, D6, D7, D8, described switch P IN diode D5, D6, D7 adopt parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, described switch P IN diode D8 adopts cascaded structure to be contained on microstrip line, and the negative pole of described switch P IN diode D8 is connected respectively with the positive pole of described switch P IN diode D5, D6, D7; Described switch selects the IN2 branch road of circuit to comprise 4 switch P IN diode D23, D25, D27, D29, described switch P IN diode D23, D25, D27 adopt parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, described switch P IN diode D29 adopts cascaded structure to be contained on microstrip line, and the negative pole of described switch P IN diode D29 is connected respectively with the positive pole of described switch P IN diode D23, D25, D27; Described switch selects the IN3 branch road of circuit to comprise 4 switch P IN diode D24, D26, D28, D30, described switch P IN diode D24, D26, D28 adopt parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, described switch P IN diode D30 adopts cascaded structure to be contained on microstrip line, and the negative pole of described switch P IN diode D30 is connected respectively with the positive pole of described switch P IN diode D24, D26, D28; Described switch selects the IN4 branch road of circuit to comprise 4 switch P IN diode D39, D40, D41, D42, described switch P IN diode D39, D40, D41 adopt parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, described switch P IN diode D42 adopts cascaded structure to be contained on microstrip line, and the negative pole of described switch P IN diode D42 is connected respectively with the positive pole of described switch P IN diode D39, D40, D41.
6. a kind of multichannel as claimed in claim 5 is inputted the microwave gain control module, it is characterized in that: described switch selects the switch P IN number of diodes of every branch road of circuit I N1～IN4 to be 3,5 or 6.
7. a kind of multichannel as claimed in claim 5 is inputted the microwave gain control module, it is characterized in that: it is 30MHz～3000MHz that described switch is selected the frequency of utilization of circuit.
8. a kind of multichannel as claimed in claim 1 is inputted the microwave gain control module, it is characterized in that: described gain control circuit comprises LNA branch road 301, straight-through branch road 302, decay branch road 303, the diode D9 of described LNA branch road 301 and diode D14 adopt cascaded structure to be contained on microstrip line, wherein the positive pole of diode D9 is connected with inductance L 7, the positive pole of diode D14 is connected with inductance L 11, diode D10～D13 adopts parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, low noise amplifier N1 is by capacitor C 2, capacitor C 3, capacitor C 12, inductance L 4 is carried out impedance matching and is contained on microstrip line, by biasing circuit, Bias7 provides power supply, the diode D31 of described direct circuit and diode D33 adopt cascaded structure to be contained on microstrip line, wherein the positive pole of diode D31 is connected with inductance L 7, the positive pole of diode D33 is connected with inductance L 11, diode D32 and diode D34 adopt parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, and by biasing circuit, Bias8 provides power supply, the diode D43 of described decay branch road 303 and diode D48 adopt cascaded structure to be contained on microstrip line, wherein the positive pole of diode D43 is connected with inductance L 7, the positive pole of diode D48 is connected with inductance L 11, diode D44～D47 adopts parallel-connection structure negative pole ground connection respectively, positive pole is connected with microstrip line, resistance R 5, resistance R 6, resistance R 7 form π type attenuation network, resistance R 8, resistance R 9, resistance R 10 form π type attenuation network, by the cascade of two π type attenuation networks, formed 30dB decay branch road 303.
9. a kind of multichannel as claimed in claim 1 is inputted the microwave gain control module, it is characterized in that: described module control circuit comprises control level B1～B4, diode D49～D52, TTL/COMS compatible decoder N2～N3, reverse proportion operational amplifier N4～N5, the positive pole of described diode D49～D52 is ground connection respectively, negative pole is connected with microstrip line, described control level B1 connects with resistance R 2, described control level B2 connects with resistance R 1, described control level B3 connects with resistance R 4, described control level B4 connects with resistance R 3, the pin A02 of described TTL/COMS compatible decoder N2 is connected with resistance R 2, pin A12 is connected with resistance R 1, pin A22, pin E12 and pin E22 ground connection, pin E32 and connect+5V of pin VCC2 power supply, pin Y02 meets the pin H34 of reverse proportion operational amplifier N4, pin Y12 meets the pin H44 of reverse proportion operational amplifier N4, pin Y22 meets the pin H24 of reverse proportion operational amplifier N4, pin Y32 meets the pin H14 of reverse proportion operational amplifier N4, the pin A03 of described TTL/COMS compatible decoder N3 is connected with resistance R 4, pin A13 is connected with resistance R 3, pin A23, pin E13 and pin E23 ground connection, pin E33 and connect+5V of pin VCC3 power supply, pin Y03 meets the pin H15 of reverse proportion operational amplifier N5, pin Y13 meets the pin H35 of reverse proportion operational amplifier N5, and pin Y23 meets the pin H25 of reverse proportion operational amplifier N5, the pin OUT34 connecting resistance R11 of described reverse proportion operational amplifier N4, pin OUT44 connecting resistance R12, pin OUT14 connecting resistance R13, pin OUT24 connecting resistance R14, the pin OUT35 connecting resistance R15 of described reverse proportion operational amplifier N5, pin OUT15 connecting resistance R16, pin OUT25 connecting resistance R17.
10. a kind of multichannel as described as claim 1 or 9 is inputted the microwave gain control module, it is characterized in that: described module control circuit has 12 kinds of states and controls functions, table specific as follows:
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Cited By (6)
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| CN106874988A (en) * | 2015-12-11 | 2017-06-20 | 中芯国际集成电路制造(上海)有限公司 | Amplitude limiter circuit and RFID tag in radio frequency identification |
| CN109547138A (en) * | 2017-09-22 | 2019-03-29 | 刘伟 | Amplitude control circuit and multichannel amplitude control matrix |
| CN110098844A (en) * | 2019-05-14 | 2019-08-06 | 广东宽普科技股份有限公司 | A kind of C-band simple two-way signal reception device |
| CN110289882A (en) * | 2019-07-29 | 2019-09-27 | 广东宽普科技股份有限公司 | A kind of radiofrequency signal either simplex transmission circuit |
| CN111030640A (en) * | 2019-12-27 | 2020-04-17 | 苏州市新诚氏通讯电子股份有限公司 | Surface-mounted miniature superposed circuit attenuation sheet and preparation method thereof |
| CN116470870A (en) * | 2023-04-19 | 2023-07-21 | 广州市迪士普音响科技有限公司 | Method, device and system for adjusting multichannel gain |
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| CN106874988A (en) * | 2015-12-11 | 2017-06-20 | 中芯国际集成电路制造(上海)有限公司 | Amplitude limiter circuit and RFID tag in radio frequency identification |
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| CN109547138B (en) * | 2017-09-22 | 2022-11-29 | 刘伟 | Amplitude control circuit and multichannel amplitude control matrix |
| CN110098844A (en) * | 2019-05-14 | 2019-08-06 | 广东宽普科技股份有限公司 | A kind of C-band simple two-way signal reception device |
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| CN110289882A (en) * | 2019-07-29 | 2019-09-27 | 广东宽普科技股份有限公司 | A kind of radiofrequency signal either simplex transmission circuit |
| CN111030640A (en) * | 2019-12-27 | 2020-04-17 | 苏州市新诚氏通讯电子股份有限公司 | Surface-mounted miniature superposed circuit attenuation sheet and preparation method thereof |
| CN116470870A (en) * | 2023-04-19 | 2023-07-21 | 广州市迪士普音响科技有限公司 | Method, device and system for adjusting multichannel gain |
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|---|---|
| CN103457561B (en) | 2016-07-06 |
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Address after: Xiuzhou District of Jiaxing City, Zhejiang Province, 314001 high street Taoyuan Road No. 587 Building No. 1 Patentee after: Jiake Electronics Co., Ltd., Zhejiang Address before: 314001 Zhejiang Province, south of the city of Jiaxing Road Branch Center No. 1369 Building No. 5 Patentee before: Jiake Electronics Co., Ltd., Zhejiang |